Cooling oil rotary focus power module immersion heat sink structure

Abstract

The application discloses a cooling oil rotary convergent power module immersion heat dissipation structure, which comprises a shell, the shell comprising a bottom wall, a top wall, a first side wall, a second side wall, a third side wall and a fourth side wall and a cavity surrounded thereby, the bottom and the top of the first side wall being respectively provided with a first opening and a second opening, one of the first opening and the second opening being a cooling oil inlet and the other being a cooling oil outlet, the bottom of the cavity being provided with a liquid cooling radiator, the liquid cooling radiator being provided with a substrate, the substrate being provided with power semiconductor chips and a flow guiding structure, the bottom surface of the power semiconductor chips being connected with the top surface of the substrate, the top surface and the side surface of the power semiconductor chips being exposed in the cavity, and the flow guiding structure being located on both sides of the power semiconductor chips and used for converging the cooling oil to the side surface and the top surface of the power semiconductor chips and dissipating heat from the top surface and the side surface of the power semiconductor chips. The application can dissipate heat from the bottom surface, the top surface and the side surface of the power semiconductor chips and improve heat dissipation efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power module heat dissipation, more particularly, to a cooling oil rotary convergent power module immersion heat dissipation structure. BACKGROUND

[0002] With the continuous improvement of power module power density, efficient cooling technology has become the key to its design and development. In view of the heat dissipation problem of power module, at present, domestic and foreign scholars and manufacturers adopt single-sided and double-sided cooling technology. Among them, single-sided cooling connects the bottom surface of the power semiconductor chip with the air-cooled or liquid-cooled heat sink through high thermal conductivity medium, so that the heat emitted by the chip is conducted to the heat sink from the bottom surface; when using double-sided heat dissipation structure, in addition to the bottom surface, the electrode on the top surface of the chip is also connected with the heat sink through high thermal conductivity medium, at this time, the heat emitted by the chip can be dissipated from the bottom surface and the top surface at the same time.

[0003] However, single-sided and double-sided heat dissipation structures each have disadvantages: (1) For single-sided cooling, its advantage lies in simple structure, but only the bottom surface of the power semiconductor chip can be cooled, and the heat dissipation efficiency is low. (2) Double-sided cooling can realize simultaneous heat dissipation of the bottom surface and the top surface of the power semiconductor chip, but on the one hand, it causes the total weight of the heat sink to rise, which is not conducive to the improvement of power density, and on the other hand, the electrode area on the top surface of the chip is relatively small, and its heat transfer efficiency is relatively low, which is difficult to meet the actual heat dissipation demand of high power density module. SUMMARY

[0004] The purpose of the present application is to provide a cooling oil rotary convergent power module immersion heat dissipation structure, which realizes heat dissipation of the bottom surface, top surface and side surface of the power semiconductor chip and improves the heat dissipation efficiency.

[0005] To achieve the above purpose, the present application provides a cooling oil rotary convergent power module immersion heat dissipation structure, comprising:

[0006] A housing, the housing comprises a bottom wall, a top wall, a first side wall, a second side wall, a third side wall and a fourth side wall and a cavity surrounded thereby, the first side wall and the second side wall are two opposite side walls extending along the width direction of the housing, the third side wall and the fourth side wall are two opposite side walls extending along the length direction of the housing, the bottom and top of the first side wall are respectively provided with a first opening and a second opening, one of the first opening and the second opening is a cooling oil inlet, and the other is a cooling oil outlet;

[0007] The bottom of the cavity is provided with a liquid-cooled heat sink, the liquid-cooled heat sink is provided with a substrate, the substrate is provided with a power semiconductor chip and a flow guide structure;

[0008] The bottom surface of the liquid cooling radiator is connected with the bottom wall, and the two sides of the liquid cooling radiator are respectively attached to the third side wall and the fourth side wall; the liquid cooling radiator has a flow channel arranged along the length direction of the shell, which is used for dissipating heat from the bottom surface of the power semiconductor chip; the end of the liquid cooling radiator close to the second side wall is spaced from the second side wall to form a rotation area for the up-and-down flow of the cooling oil.

[0009] The bottom surface of the power semiconductor chip is connected with the top surface of the substrate, and the top surface and the side surface of the power semiconductor chip are exposed in the cavity; the flow guide structure is located on the two sides of the power semiconductor chip, and is used for converging the cooling oil to the side surface and the top surface of the power semiconductor chip to dissipate heat from the top surface and the side surface of the power semiconductor chip.

[0010] Optionally, a partition plate is arranged between the end of the liquid cooling radiator close to the first side wall and the first side wall; one end of the partition plate is connected with the first side wall between the first opening and the second opening, the other end of the partition plate is connected with the top of the end of the liquid cooling radiator, the two sides of the partition plate are respectively connected with the third side wall and the fourth side wall, the top surface of the partition plate and the liquid cooling radiator divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator is located in the lower channel, and the substrate, the power semiconductor chip and the flow guide structure are located in the upper channel.

[0011] Optionally, the end of the liquid cooling radiator close to the first side wall is attached to the first side wall, the first opening is opposite to the flow channel opening of the liquid cooling radiator, and the second opening is located above the top surface of the liquid cooling radiator; the top surface of the liquid cooling radiator divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator is located in the lower channel, and the substrate, the power semiconductor chip and the flow guide structure are located in the upper channel.

[0012] Optionally, the flow guide structure comprises a first flow collecting plate and a second flow collecting plate arranged on the substrate along the longitudinal direction; the first flow collecting plate is located on the side close to the third side wall, and the second flow collecting plate is located on the side close to the fourth side wall; the power semiconductor chip is located between the first flow collecting plate and the second flow collecting plate.

[0013] The projection of the first flow collecting plate and the second flow collecting plate on the substrate is two arcs extending along the length direction of the shell and being axially symmetrically distributed; and along the flow direction of the cooling oil, the distance between the first flow collecting plate and the second flow collecting plate gradually decreases from one end of the power semiconductor chip to the other end of the power semiconductor chip.

[0014] The first bus bar is provided with a plurality of first flow guide pieces on a side surface facing the power semiconductor chip, the plurality of first flow guide pieces are spaced apart along the length direction of the shell, the first flow guide piece extends along the longitudinal direction from the top of the first bus bar to the top of the first bus bar, one end of the first flow guide piece is connected with the first bus bar, and the other end of the first flow guide piece is inclined towards the downstream direction of the cooling oil flow.

[0015] The second bus bar is provided with a plurality of second flow guide pieces on a side surface facing the power semiconductor chip, the plurality of second flow guide pieces are spaced apart along the length direction of the shell, the second flow guide piece extends along the longitudinal direction from the top of the second bus bar to the top of the second bus bar, one end of the second flow guide piece is connected with the second bus bar, and the other end of the second flow guide piece is inclined towards the downstream direction of the cooling oil flow.

[0016] Optionally, the included angle between the first flow guide piece and the first bus bar ranges from 30° to 60°, and the included angle between the second flow guide piece and the second bus bar is equal to the included angle between the first flow guide piece and the first bus bar.

[0017] Optionally, the plurality of first flow guide pieces and the plurality of second flow guide pieces are arranged opposite to each other, and the distance between the first flow guide piece and the power semiconductor chip is equal to the distance between the second flow guide piece and the power semiconductor chip.

[0018] Optionally, the height of the first bus bar and the second bus bar is greater than the thickness of the power semiconductor chip, and the length of the first bus bar and the second bus bar is greater than the length of the power semiconductor chip.

[0019] Optionally, the top of the first bus bar and the second bus bar has a gap with the top wall, or the first bus bar and the second bus bar are connected with the top wall.

[0020] Optionally, the substrate is a DBC substrate, and the DBC substrate comprises a lower copper layer, a ceramic layer and an upper copper layer stacked from bottom to top.

[0021] The lower copper layer of the DBC substrate is connected with the top surface of the liquid cooling radiator through a connecting layer.

[0022] The bottom surface of the power semiconductor chip is welded to the upper copper layer of the DBC substrate through a welding layer.

[0023] The bottom of the first bus bar and the second bus bar is welded to the upper copper layer of the DBC substrate.

[0024] Optionally, the connecting layer is silicone grease, adhesive or welding layer.

[0025] The beneficial effects of the present application are that the cooling oil rotary convergence power module immersion heat dissipation structure is provided with a liquid cooling radiator, a substrate and power semiconductor chips arranged in the cavity of the shell from bottom to top, and a first opening and a second opening are arranged at the bottom and top of one end of the shell as the cooling oil outlet / inlet, wherein the liquid cooling radiator divides the internal cavity of the shell into two layers of channels, and the gap between the end of the liquid cooling radiator away from the opening of the shell and the shell can form a rotary zone for the up-and-down flow of the cooling oil, that is, a cooling oil circulation channel is formed between the first opening, the liquid cooling radiator, the up-and-down rotary zone of the cooling oil, the power chip and the second opening, the cooling oil flows through the radiator in the lower channel to dissipate heat from the bottom surface of the power semiconductor chip, and the cooling oil flows through the upper channel to dissipate heat from the top surface and the side surface of the power semiconductor chip, so that the heat dissipation of the bottom surface, the top surface and the side surface of the power semiconductor chip can be realized at the same time, the area utilization rate of the top surface is high, and the heat dissipation efficiency can be effectively improved; meanwhile, the present application additionally increases a drainage structure on the two sides of the power semiconductor chip, and the cooling oil is drained to the top surface and the side surface of the power semiconductor chip through the drainage structure, so that the heat dissipation effect of the semiconductor chip is enhanced; secondly, the cooling flow path in the liquid cooling radiator and the cooling oil path around the chip are connected in series, and all the cooling oil participates in the heat dissipation of the radiator (the bottom surface of the power semiconductor chip) and the top surface / side surface of the chip at the same time, so that the high heat dissipation efficiency is further ensured.

[0026] Further, the drainage structure of the present application includes a pair of busbars, each of which is provided with a plurality of drainage fins on the side facing the power semiconductor chip, the two busbars project on the substrate as two axis-symmetrical arcs, and the distance between the two busbars gradually narrows along the flow direction of the cooling oil, so that the cooling oil can be collected around the power semiconductor chip, the flow rate of the cooling oil around the chip is increased, the drainage fins are inclined at a certain angle downstream of the flow direction of the cooling oil, the cooling oil flowing between the two busbars can be further collected to the area where the chip is located, the flow rate of the cooling oil around the top surface and the side surface of the chip is further increased, so that the heat dissipation effect of the top surface and the side surface of the chip is enhanced, and in addition, the inclined drainage fins can prevent the reverse flow of the cooling oil, so that the circulation flow effect of the cooling oil in the shell is enhanced.

[0027] The system of the present application has other characteristics and advantages, which will be apparent from or set forth in the accompanying drawings and the following detailed description, which together serve to explain certain principles of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0028] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings in which like reference characters refer to like parts throughout the figures, and in which:

[0029] Figure 1 and Figure 2 are respectively a longitudinal sectional view and a top view of a chip top surface of a cooling oil rotary convergent power module immersion heat dissipation structure according to an embodiment of the present application.

[0030] Figure 3 and Figure 4 are respectively a longitudinal sectional view and a top view of a chip top surface of a cooling oil rotary convergent power module immersion heat dissipation structure according to an embodiment of the present application.

[0031] Figure 5 and Figure 6 are respectively a longitudinal sectional view and a top view of a chip top surface of a cooling oil rotary convergent power module immersion heat dissipation structure according to an embodiment of the present application.

[0032] Figure 7 and Figure 8 are respectively a longitudinal sectional view and a top view of a chip top surface of a cooling oil rotary convergent power module immersion heat dissipation structure according to an embodiment of the present application. DETAILED DESCRIPTION

[0033] The present application will be described in more detail by referring to the attached drawings. Although preferred embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present application will be thorough and complete, and will fully convey the scope of the present application to those skilled in the art.

[0034] Embodiment 1

[0035] As shown in FIG. 1, Figure 1 the present embodiment provides a cooling oil rotary convergent power module immersion heat dissipation structure, comprising:

[0036] a housing 1 including a bottom wall 101, a top wall 102, a first side wall 103, a second side wall 104, a third side wall 105 and a fourth side wall 106, and a cavity surrounded thereby, the first side wall 103 and the second side wall 104 being two opposite side walls extending along a width direction of the housing 1, the third side wall 105 and the fourth side wall 106 being two opposite side walls extending along a length direction of the housing 1, the first side wall 103 being provided with a first opening 11a and a second opening 11b at a bottom and a top thereof respectively, the first opening 11a being a cooling oil inlet, the second opening 11b being a cooling oil outlet;

[0037] The bottom of the cavity is provided with a liquid cooling radiator 2, the liquid cooling radiator 2 is provided with a substrate, the substrate is provided with a power semiconductor chip 9 and a flow guide structure 12;

[0038] The bottom surface of the liquid cooling radiator 2 is connected with the bottom wall 101, the two sides of the liquid cooling radiator 2 are respectively attached with the third side wall 105 and the fourth side wall 106, the liquid cooling radiator 2 has a flow channel arranged along the length direction of the shell 1, for heat dissipation of the bottom surface of the power semiconductor chip 9; the end of the liquid cooling radiator 2 close to the second side wall 104 has a gap with the second side wall 104, forming a rotary area 13 for the up and down flow of the cooling oil 7;

[0039] The bottom surface of the power semiconductor chip 9 is connected with the top surface of the substrate, the top surface and the side surface of the power semiconductor chip 9 are exposed in the cavity; the flow guide structure 12 is located on both sides of the power semiconductor chip 9, for converging the cooling oil to the side surface and the top surface of the power semiconductor chip 9, heat dissipation of the top surface and the side surface of the power semiconductor chip 9 and preventing the reverse flow of the cooling oil 7.

[0040] In the embodiment, the substrate is a DBC substrate (Direct Copper Bond), which includes a lower copper layer 4, a ceramic layer 5 and an upper copper layer 6 stacked from bottom to top; the lower copper layer 4 of the DBC substrate is connected with the top surface of the liquid cooling radiator 2 through a connecting layer 3; the bottom surface of the power semiconductor chip 9 is welded to the upper copper layer 6 of the DBC substrate through a welding layer 8; the bottom of the first bus bar 12a and the second bus bar 12b is welded to the upper copper layer 6 of the DBC substrate. Wherein, the connecting layer 3 is silicone grease, adhesive or welding layer 8.

[0041] In the embodiment, the liquid cooling radiator 2 close to the first side wall 103 has a partition plate 10 between the first side wall 103 and the end of the liquid cooling radiator 2, one end of the partition plate 10 is connected with the first side wall 103 between the first opening 11a and the second opening 11b, the other end of the partition plate 10 is connected with the top of the end of the liquid cooling radiator 2, the two sides of the partition plate 10 are respectively connected with the third side wall 105 and the fourth side wall 106, the top surface of the partition plate 10 and the liquid cooling radiator 2 divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator 2 is located in the lower channel, the substrate, the power semiconductor chip 9 and the flow guide structure 12 are located in the upper channel.

[0042] As Figure 2As shown, in the embodiment, the drainage structure 12 includes a first bus plate 12a and a second bus plate 12b longitudinally arranged on the substrate, the first bus plate 12a is located on the side close to the third side wall 105, and the second bus plate 12b is located on the side close to the fourth side wall 106, and the power semiconductor chip 9 is located between the first bus plate 12a and the second bus plate 12b.

[0043] The projections of the first bus plate 12a and the second bus plate 12b on the substrate are two arcs extending along the length direction of the shell 1 and axially symmetrically distributed, and along the flow direction of the cooling oil 7 (i.e. from the second side wall 104 to the first side wall 103), the distance between the first bus plate 12a and the second bus plate 12b gradually decreases from one end of the power semiconductor chip 9 to the other end of the power semiconductor chip 9.

[0044] The first bus plate 12a is provided with a plurality of first drainage fins 12c on the side surface facing the power semiconductor chip 9, the plurality of first drainage fins 12c are spaced apart along the length direction of the shell 1, the first drainage fin 12c extends longitudinally from the top of the first bus plate 12a to the top of the first bus plate 12a, one end of the first drainage fin 12c is connected with the first bus plate 12a, and the other end of the first drainage fin 12c is inclined towards the downstream direction of the cooling oil 7.

[0045] The second bus plate 12b is provided with a plurality of second drainage fins 12d on the side surface facing the power semiconductor chip 9, the plurality of second drainage fins 12d are spaced apart along the length direction of the shell 1, the second drainage fin 12d extends longitudinally from the top of the second bus plate 12b to the top of the second bus plate 12b, one end of the second drainage fin 12d is connected with the second bus plate 12b, and the other end of the second drainage fin 12d is inclined towards the downstream direction of the flow of the cooling oil 7.

[0046] Preferably, the included angle (the included angle a in the figure) between the first drainage fin 12c and the first bus plate 12a ranges from 30° to 60°, and the included angle between the second drainage fin 12d and the second bus plate 12b is equal to the included angle between the first drainage fin 12c and the first bus plate 12a.

[0047] In the embodiment, the plurality of first drainage fins 12c and the plurality of second drainage fins 12d are arranged opposite to each other, and the distance between the first drainage fin 12c and the power semiconductor chip 9 is equal to the distance between the second drainage fin 12d and the power semiconductor chip 9.

[0048] Further, in the embodiment, the first bus bar 12a and the second bus bar 12b have a height greater than the thickness of the power semiconductor chip 9, and a length greater than the length of the power semiconductor chip 9. The top of the first bus bar 12a and the second bus bar 12b has a gap with the top wall 102.

[0049] Specifically, the drainage structure 12 of the embodiment is designed to collect part of the cooling oil 7 in the upper channel to the periphery of the power semiconductor chip 9 and increase the flow rate of the cooling oil 7 around the chip; at the same time, the plurality of drainage fins are inclined at a certain angle towards the downstream of the flow direction of the cooling oil 7, and the plurality of drainage fins can further collect the cooling oil 7 flowing between the two bus bars to the area where the chip is located, further strengthen the flow rate of the cooling oil 7 on the four sides and the top of the chip, thereby enhancing the heat dissipation effect on the top and sides of the chip. In addition, the drainage fins inclined towards the downstream direction of the cooling oil 7 can also prevent the cooling oil from flowing in the opposite direction, and enhance the circulating flow effect of the cooling oil in the housing 1. In addition, since the plurality of first drainage fins 12c and the plurality of second drainage fins 12d are opposite to each other and the distance between the first drainage fins 12c, the second drainage fins 12d and the power semiconductor chip 9 is equal, the flow and flow rate of the cooling oil 7 flowing through both sides of the power semiconductor chip 9 can be the same, avoiding the generation of vortex or turbulent flow, and improving the circulating effect and heat dissipation effect of the cooling oil 7. Secondly, the height of the first bus bar 12a and the second bus bar 12b is greater than the thickness of the power semiconductor chip 9, and the length of the first bus bar 12a and the second bus bar 12b is greater than the length of the power semiconductor chip 9, which can ensure that the top and sides of the power semiconductor chip 9 are completely located in the drainage structure, and ensure that there is enough cooling oil flowing through the top and sides of the chip.

[0050] The cooling oil rotary convergent power module immersion heat dissipation structure of the embodiment adopts a structure with a partition plate 10 and cooling oil 7 entering from the bottom and exiting from the top. Specifically, the liquid cooling radiator 2 is installed on the inner bottom surface of the shell 1, the lower copper layer 4 of the DBC substrate is connected with the liquid cooling radiator 2 through the connecting layer 3 (which can be silicone grease, adhesive or welding layer 8), the power semiconductor chip 9 is welded on the upper copper layer 6 of the DBC substrate through the welding layer 8, the power semiconductor chip 9 is electrically insulated from the liquid cooling radiator 2 due to the existence of the ceramic layer 5 of the DBC substrate, the first opening 11a below the first side wall 103 at one end of the shell 1 serves as the cooling oil inlet, the second opening 11b above the first side wall 103 serves as the cooling oil outlet, the top surface of the liquid cooling radiator 2 near one end of the first side wall 103 is connected with the first side wall 103 through the partition plate 10, the first opening 11a and the second opening 11b are respectively located on the lower side and the upper side of the partition plate 10, the top surface of the partition plate 10 and the liquid cooling radiator 2 divide one side of the cavity in the shell 1 into an upper channel and a lower channel, so as to realize the isolation of the inlet and outlet oil channels, and the interval between the other end of the liquid cooling radiator 2 and the second side wall 104 on the other side of the cavity in the shell 1 forms a rotary zone 13 for the cooling oil 7 to rotate upward from the bottom.

[0051] In the embodiment, the circulation process of the cooling oil 7 in the shell 1 is as follows: the cooling oil 7 enters the shell 1 from the first opening 11a, the inlet and outlet sides are isolated by the partition plate 10, at this time, the cooling oil 7 first flows into the flow channel of the radiator to realize heat dissipation of the bottom surface of the power semiconductor chip 9, the cooling oil 7 flows out of the radiator, and then rotates upward in the reflux zone on the other side of the cavity in the shell 1, converges around the power semiconductor chip 9 through the flow guide structure 12, flows through the top surface and the side surface of the power semiconductor chip 9, and realizes heat dissipation of the top surface and the side surface of the power semiconductor chip 9, and then flows out of the shell 1 from the second opening 11b at the top of the first side wall 103 of the shell 1.

[0052] The heat dissipation structure of the embodiment can realize heat dissipation of the bottom surface, the top surface and the side surface of the power semiconductor chip 9 at the same time, and the utilization rate of the top surface area is high, which can effectively improve the heat dissipation efficiency; at the same time, the flow guide structure 12 added on both sides of the power semiconductor chip 9 guides the cooling oil 7 to the top surface and the side surface of the power semiconductor chip 9, which effectively enhances the heat dissipation effect of the semiconductor chip; secondly, the heat dissipation structure connects the cooling flow path in the liquid cooling radiator 2 with the cooling oil 7 path around the chip in series, all the cooling oil 7 participates in the heat dissipation of the radiator (the bottom surface of the power semiconductor chip 9) and the top surface / side surface of the chip at the same time, thereby effectively ensuring high heat dissipation efficiency.

[0053] In other embodiments, the first busbar 12a and the second busbar 12b may also be connected to the top wall 102, with one end of the first busbar 12a close to the second side wall 103 being in contact with the third side wall 105, and one end of the second busbar 12b close to the second side wall 104 being in contact with the fourth side wall 106. In this case, the cooling oil 7 in the upper channel can be completely converged to the top and side surfaces of the power semiconductor chip 9 through the drainage structure 12, thereby further enhancing the cooling effect.

[0054] Example 2

[0055] like Figure 3 As shown, this embodiment provides a cooling oil rotary convergence power module immersion heat dissipation structure. The difference between this embodiment and embodiment 1 is that in this embodiment, the second opening 11b at the top of the first side wall 103 at one end of the housing 1 is used as the cooling oil inlet, and the first opening 11a at the bottom of the first side wall 103 is used as the cooling oil outlet. That is, the cooling oil 7 rotates from top to bottom, that is, a structure with a partition 10 and cooling oil 7 entering from top and exiting from bottom is adopted. Accordingly, as shown in FIG. Figure 4 As shown, the drainage structure 12 in this embodiment is identical to that in Example 1, but is oriented in the opposite direction. That is, the distance between the first and second collecting plates 12a, 12b gradually decreases along the flow direction of the cooling oil 7 (from the first side wall 103 to the second side wall 104). The remaining structure is identical to that in Example 1.

[0056] In this embodiment, the circulation process of the cooling oil 7 in the shell 1 is as follows: the cooling oil 7 enters the shell 1 through the second opening 11b, and the inlet and outlet oil channels are isolated by the partition 10 on the inlet / outlet side. At this time, the cooling oil 7 is first gathered around the power semiconductor chip 9 by the drainage structure 12, flows through the top and side surfaces of the power semiconductor chip 9, and realizes heat dissipation of the top and side surfaces of the power semiconductor chip 9, and then turns downward in the reflux area on the other side of the cavity in the shell 1, and flows into the flow channel of the radiator to realize heat dissipation of the bottom surface of the power semiconductor chip 9; after the cooling oil 7 flows out of the radiator, it flows out of the shell 1 through the second opening 11b at the bottom of the first side wall 103 of the shell 1.

[0057] The heat dissipation structure of this embodiment has the same heat dissipation effect as that of the first embodiment, and can simultaneously achieve efficient heat dissipation of the bottom, top, and side surfaces of the power semiconductor chip 9 .

[0058] Example 3

[0059] like Figure 5As shown, the embodiment provides a cooling oil rotary convergence power module immersion heat dissipation structure. The difference between the embodiment and embodiment 1 is that the partition plate design is cancelled, and the liquid cooling radiator 2 is directly used in close contact with the first side wall 103 at one end of the shell 1 to realize the oil channel isolation of the inlet and outlet sides, and the first opening 11a at the bottom of the first side wall 103 is used as the cooling oil inlet, and the second opening 11b at the top of the first side wall 103 is used as the cooling oil outlet, that is, a non-partition plate, cooling oil lower inlet and upper outlet structure design is adopted.

[0060] Specifically, in the embodiment, the liquid cooling radiator 2 is attached to the first side wall 103 at one end, the first opening 11a is opposite to the flow channel port of the liquid cooling radiator 2, the second opening 11b is located above the top surface of the liquid cooling radiator 2, the top surface of the liquid cooling radiator 2 divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator 2 is located in the lower channel, and the DBC substrate, the power semiconductor chip 9 and the flow guide structure 12 are located in the upper channel. Figure 6 As shown, the flow guide structure 12 in the embodiment has the same structure and orientation as the flow guide structure 12 in embodiment 1, that is, the distance between the first bus plate 12a and the second bus plate 12b gradually decreases along the flow direction of the cooling oil 7 (from the second side wall 104 to the first side wall 103). The rest of the structure design is exactly the same as that of embodiment 1.

[0061] In the heat dissipation structure of the embodiment, the circulation process of the cooling oil 7 in the shell 1 is as follows: the cooling oil 7 flows into the shell 1 from the first opening 11a at the bottom of the first side wall 103 at one end of the shell 1, and since the liquid cooling radiator 2 is attached to the first side wall 103 at one end, no partition plate is needed to block the flow, and the cooling oil 7 directly flows into the liquid cooling radiator 2 to realize heat dissipation of the bottom surface of the power semiconductor chip 9; then, the cooling oil 7 flows back upward between the other end of the liquid cooling radiator 2 and the second side wall 104, and then converges to the top surface and side surface of the power semiconductor chip 9 through the flow guide effect of the flow guide structure 12 to realize heat dissipation of the top surface and side surface of the power semiconductor chip 9. Compared with embodiment 1, since the partition plate is cancelled in the heat dissipation structure of the embodiment, the heat dissipation structure is simplified, and at the same time, the volume of the shell 1 can be reduced, which can meet the high-efficiency heat dissipation demand of small-size power modules.

[0062] Embodiment 4

[0063] As shown, Figure 7As shown, the embodiment provides a cooling oil rotary convergence immersion heat dissipation structure for a power module. The embodiment also adopts a non-baffle design, i.e., directly adopting the liquid cooling radiator 2 to tightly adhere to the first side wall 103 of one end of the shell 1 to realize the oil channel isolation of the inlet and outlet side. The difference lies in that the heat dissipation structure of the embodiment takes the second opening 11b at the top of the first side wall 103 as the cooling oil inlet and takes the first opening 11a at the bottom of the first side wall 103 as the cooling oil outlet, i.e., adopting a non-baffle, cooling oil 7 up-in and down-out structure design. As shown in FIG. 4, the cooling oil 7 flows into the shell 1 from the second opening 11b at the top of the first side wall 103 of one end of the shell 1, and then flows into the liquid cooling radiator 2 through the flow guide structure 12, and then flows out from the first opening 11a at the bottom of the first side wall 103 of the other end of the shell 1. Figure 8 As shown, the flow guide structure 12 in the embodiment is the same as the flow guide structure 12 in the embodiment 3, but the direction is opposite, i.e., the distance between the first flow guide plate 12a and the second flow guide plate 12b gradually decreases along the flow direction of the cooling oil 7 (from the first side wall 103 to the second side wall 104 direction). The rest of the structure design is completely the same as the embodiment 3.

[0064] In the heat dissipation structure of the embodiment, the circulation process of the cooling oil 7 in the shell 1 is as follows: the cooling oil 7 flows into the shell 1 from the second opening 11b at the top of the first side wall 103 of one end of the shell 1, and then flows into the liquid cooling radiator 2 through the flow guide structure 12, and then flows out from the first opening 11a at the bottom of the first side wall 103 of the other end of the shell 1. The heat dissipation structure of the embodiment is consistent with the heat dissipation effect of the embodiment 3. The heat dissipation structure of the embodiment cancels the baffle, simplifies the heat dissipation structure, and at the same time can reduce the volume of the shell 1, which can meet the high-efficiency heat dissipation demand of the small-size power module.

[0065] The above has described the embodiments of the present application. The above description is exemplary and is not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A cooling oil rotary convergence power module immersion heat dissipation structure, characterized in that: The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. The application relates to a power semiconductor module. 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The cooled oil rotary conical power module immersion heat sink structure of claim 1, wherein, The liquid cooling radiator is attached to one end of the first side wall, and the first opening is opposite to the flow channel of the liquid cooling radiator, the second opening is above the top surface of the liquid cooling radiator, the top surface of the liquid cooling radiator divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator is located in the lower channel, and the substrate, the power semiconductor chip and the flow guide structure are located in the upper channel.

3. The cooled oil rotary conical power module immersion heat sink structure of claim 1, wherein, The liquid cooling radiator is attached to one end of the first side wall, and the first opening is opposite to the flow channel of the liquid cooling radiator, the second opening is above the top surface of the liquid cooling radiator, the top surface of the liquid cooling radiator divides one side of the cavity into an upper channel and a lower channel, the flow channel of the liquid cooling radiator is located in the lower channel, and the substrate, the power semiconductor chip and the flow guide structure are located in the upper channel.

4. The cooled oil rotary conical power module immersion heat sink structure of claim 1, wherein, The included angle between the first flow guide sheet and the first bus plate ranges from 30° to 60°, and the included angle between the second flow guide sheet and the second bus plate is equal to the included angle between the first flow guide sheet and the first bus plate.

5. The cooled oil rotary conical power module immersion heat sink structure of claim 4, wherein, The first flow guide sheets and the second flow guide sheets are arranged one by one in pairs, and the distance between the first flow guide sheets and the power semiconductor chip is equal to the distance between the second flow guide sheets and the power semiconductor chip.

6. The cooled oil rotary convergence power module immersion heat sink structure of claim 5, wherein, The height of the first bus plate and the second bus plate is greater than the thickness of the power semiconductor chip, and the length of the first bus plate and the second bus plate is greater than the length of the power semiconductor chip.

7. The cooled oil rotary convergence power module immersion heat sink structure of claim 6, wherein, The top of the first bus plate and the second bus plate is spaced apart from the top wall, or the first bus plate and the second bus plate are connected to the top wall.

8. The cooled oil rotary convergence power module immersion heat sink structure of claim 1, wherein, The substrate is a DBC substrate, and the DBC substrate comprises a lower copper layer, a ceramic layer and an upper copper layer stacked from bottom to top. The lower copper layer of the DBC substrate is connected to the top surface of the liquid cooling radiator through a connecting layer. The bottom surface of the power semiconductor chip is welded to the upper copper layer of the DBC substrate through a welding layer. The bottom of the first bus plate and the second bus plate is welded to the upper copper layer of the DBC substrate.

9. The cooled oil rotary convergence power module immersion heat sink structure of claim 8, wherein, The connecting layer is silicone grease, adhesive or welding layer.

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