A strained quantum well laser based on antimony-phosphorus material system

CN119765020AActive Publication Date: 2025-04-04山西创芯光电科技有限公司
View PDF 10 Cites 1 Cited by

Patent Information

Application Number
CN202510036625.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-09
Publication Date
2025-04-04
Estimated Expiration
2045-01-09

AI Technical Summary

Technical Problem

The classic InGa(As)Sb-AlGaAsSb type I strained quantum wells show advantages in the 2-3um band, but their valence band band is not large, and the band steps of the limiting layer and quantum wells are around 0.25eV, which is not strong in binding holes, which limits the improvement of the laser gain and is not high in thermal conductivity, making it difficult to develop high-gain, high-power mid-infrared and near-infrared lasers.

Method used

Using a strained quantum well laser based on antimony-phosphorus material system, by introducing phosphorus into the classical structure, the valence band step and thermal conductivity are effectively improved. The specific structure includes epitaxially growing buffer layer, restriction layer, waveguide layer, quantum barrier layer, quantum well and other levels on the substrate, and lattice structures that match or mismatch with antimony-phosphorus materials of different component proportions are used to optimize the energy band and thermal conductivity.

Benefits of technology

By increasing the valence band step and thermal conductivity, the hole binding ability is enhanced, the gain performance of the laser is improved, and the high gain and high power development of mid-infrared and near-infrared lasers is promoted.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119765020A_ABST
    Figure CN119765020A_ABST
Patent Text Reader

Abstract

The invention provides a strained quantum well laser based on an antimony-phosphorus material system, belonging to the technical field of semiconductor lasers; the invention solves the problems of a classical InGa(As)Sb-AlGaAsSb I-type strained quantum well structure having a small valence band order and weak hole binding ability; the invention comprises a substrate, and a buffer layer, a lower confinement layer, a lower waveguide layer, a lower quantum barrier layer, a quantum well, an upper quantum barrier layer, an upper waveguide layer, an upper confinement layer and a protective layer which are sequentially epitaxially grown on the substrate, wherein the substrate and the buffer layer adopt InPSb material, the lower confinement layer and the upper confinement layer adopt InAlPSb material lattice-matched with the substrate material, the lower waveguide layer, the lower quantum barrier layer, the upper quantum barrier layer and the upper waveguide layer all adopt AlGaPSb material lattice-matched with the substrate material, and the quantum well adopts InGaPSb material lattice-mismatched with the substrate material; the invention introduces phosphorus into the classical structure, namely adopts the antimony-phosphorus material system, and can effectively improve the valence band order and thermal conductivity.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof

    CN103078252A

  • Gallium antimonide-based 2-4(mu)m quantum well laser structure having hole blocking layer

    CN106099643A

  • GaSb-base 2-4-[mu]m quantum well laser structure containing hole blocking layer

    CN106300014A

  • Hydrogen diffusion barrier for hybrid semiconductor growth

    CN113490998A

  • Quantum well bias and stress sensor

    CN114964569A

Cited By

  • Antimonide multi-wavelength laser material and preparation method and application thereof

    CN121011921A