Intelligent power module and chip

Abstract

The embodiment of the invention provides an intelligent power module and a chip. The intelligent power module comprises a driving circuit, a power factor correction circuit and an inverter circuit, the driving circuit is connected with the power factor correction circuit and the inverter circuit and is used for controlling the working states of the power factor correction circuit and the inverter circuit; the power factor correction circuit is connected with the inverter circuit and comprises a plurality of metal oxide semiconductor field effect transistors, and the power factor correction circuit is used for transmitting direct current voltage to the inverter circuit after rectifying the received first alternating current voltage when the metal oxide semiconductor field effect transistors are in different working states respectively; the inverter circuit is used for receiving the DC voltage, converting the DC voltage into a second AC voltage, and transmitting the second AC voltage to a load. The power factor correction circuit is integrated in the intelligent power module, so that the problem that the power factor correction circuit is positioned at the front-end power supply part, so that the power supply part circuit occupies too large area of a PCB (Printed Circuit Board), and the cost of the whole system is obviously increased is avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an intelligent power module and a chip. Background Art

[0002] Intelligent Power Module (IPM) is a highly intelligent power switching device. It integrates power chip and control chip, has the characteristics of high speed and low power consumption, and has protection functions such as undervoltage protection, overheat protection, overcurrent protection and short circuit protection. It is widely used in home appliances, industry, energy and other industries due to its small size, compact layout and convenient use. Conventional intelligent power modules mainly include driver chips and three-phase full-bridge power chips. The driver chip controls the switch of the power chip to convert DC power into controllable AC power for motor drive or DC / AC (Direct Current / Alternating Current) applications, and does not have the function of AC to DC conversion.

[0003] In applications with higher power, in order to improve energy efficiency and reduce harmonic interference, the front-end power supply part, i.e., AC / DC (Alternating Current / Direct Current), will adopt PFC (Power Factor Correction) power supply circuit, resulting in the power supply circuit occupying an increasingly larger area of ​​PCB (Printed Circuit Board), which not only directly pushes up the manufacturing cost of PCB board, but also increases the purchase cost of components, insulating silicone sheets and heat sinks, thereby significantly increasing the cost of the entire system. Summary of the invention

[0004] In view of the above problems, embodiments of the present invention are proposed to provide an intelligent power module and a chip that overcome the above problems or at least partially solve the above problems.

[0005] In order to solve the above problems, an embodiment of the present invention discloses an intelligent power module, which includes a driving circuit, a power factor correction circuit and an inverter circuit;

[0006] The driving circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the working states of the power factor correction circuit and the inverter circuit;

[0007] The power factor correction circuit is connected to the inverter circuit and includes a plurality of metal oxide semiconductor field effect transistors. The power factor correction circuit is used to transmit a DC voltage to the inverter circuit after rectifying the received first AC voltage when the plurality of metal oxide semiconductor field effect transistors are in different working states respectively;

[0008] The inverter circuit is used for receiving the DC voltage and converting the DC voltage into a second AC voltage for transmission to a load.

[0009] Optionally, the power factor correction circuit further includes a plurality of diodes, a plurality of insulated gate bipolar transistors and a plurality of fast recovery diodes;

[0010] The plurality of insulated gate bipolar transistors are respectively connected in parallel with the plurality of fast recovery diodes;

[0011] The plurality of metal oxide semiconductor field effect transistors are respectively connected in parallel with the plurality of diodes.

[0012] Optionally, the plurality of metal oxide semiconductor field effect transistors include a first metal oxide semiconductor field effect transistor and a second metal oxide semiconductor field effect transistor, the plurality of diodes include a first diode and a second diode, the insulated gate bipolar transistor includes a first insulated gate bipolar transistor and a second insulated gate bipolar transistor, and the fast recovery diode includes a first fast recovery diode and a second fast recovery diode;

[0013] The first insulated gate bipolar transistor is connected in parallel with the first fast recovery diode; the second insulated gate bipolar transistor is connected in parallel with the second fast recovery diode;

[0014] The first metal oxide semiconductor field effect transistor is connected in parallel with the first diode, and the second metal oxide semiconductor field effect transistor is connected in parallel with the second diode;

[0015] The first insulated gate bipolar transistor, the first fast recovery diode, the first metal oxide semiconductor field effect transistor and the first diode are located in the upper bridge arm, and the second insulated gate bipolar transistor, the second fast recovery diode, the second metal oxide semiconductor field effect transistor and the second diode are located in the lower bridge arm.

[0016] Optionally, the power factor correction circuit further includes a capacitor;

[0017] The capacitor is connected to the inverter circuit and is used to transmit a DC voltage to the inverter circuit.

[0018] Optionally, the power factor correction circuit is used to charge the capacitor when the first fast recovery diode and the second metal oxide semiconductor field effect transistor are turned on.

[0019] Optionally, the power factor correction circuit is used to charge the capacitor when the first diode and the second insulated gate bipolar transistor are turned on.

[0020] Optionally, the inverter circuit includes a plurality of insulated gate bipolar transistors and a plurality of diodes, and the plurality of insulated gate bipolar transistors are respectively connected in parallel with the plurality of diodes.

[0021] Optionally, the multiple insulated gate bipolar transistors include a third insulated gate bipolar transistor, a fourth insulated gate bipolar transistor, a fifth insulated gate bipolar transistor, a sixth insulated gate bipolar transistor, a seventh insulated gate bipolar transistor and an eighth insulated gate bipolar transistor, and the multiple diodes include a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode and an eighth diode.

[0022] Optionally, the intelligent power module further includes a substrate, the drive circuit, the power factor correction circuit and the inverter circuit are arranged on the substrate, and the substrate is a direct-bonded copper structure.

[0023] Accordingly, an embodiment of the present invention discloses a chip, wherein the chip includes the intelligent power module as described above.

[0024] The embodiments of the present invention include the following advantages:

[0025] The intelligent power module of the embodiment of the present invention includes a driving circuit, a power factor correction circuit and an inverter circuit; the driving circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the working state of the power factor correction circuit and the inverter circuit; the power factor correction circuit is connected to the inverter circuit, and includes a plurality of metal oxide semiconductor field effect transistors, and the power factor correction circuit is used to transmit a DC voltage to the inverter circuit after rectifying the received first AC voltage when the plurality of metal oxide semiconductor field effect transistors are in different working states; the inverter circuit is used to receive the DC voltage and convert the DC voltage into a second AC voltage to transmit to the load. By integrating the power factor correction circuit inside the intelligent power module, it is avoided that the power factor correction circuit is located in the front-end power supply part, resulting in the power supply part circuit occupying too large an area of ​​the PCB board, which causes the cost of the entire system to rise significantly, thereby reducing the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a structural schematic diagram of an intelligent power module according to an embodiment of the present invention;

[0027] Figure 2 is a structural schematic diagram of another intelligent power module according to an embodiment of the present invention;

[0028] Figure 3 is a structural schematic diagram of another intelligent power module according to an embodiment of the present invention;

[0029] Figure 4 is a schematic diagram of the internal structure of an intelligent power module according to an embodiment of the present invention;

[0030] Figure 5 is a schematic diagram of the internal structure of another intelligent power module according to an embodiment of the present invention;

[0031] Figure 6 The figure is a schematic diagram of the appearance of an intelligent power module according to an embodiment of the present invention.

[0032] Figure numerals: intelligent power module 100, drive circuit 10, power factor correction circuit 20, metal oxide semiconductor field effect transistor 21, first metal oxide semiconductor field effect transistor 211, second metal oxide semiconductor field effect transistor 212, first diode 221, second diode 222, first insulated gate bipolar transistor 231, second insulated gate bipolar transistor 232, first fast recovery diode 241, second fast recovery diode 242, capacitor 25, inverter circuit 30, third insulated gate bipolar transistor 311, fourth insulated gate bipolar transistor 312, fifth insulated gate bipolar transistor 313, sixth insulated gate bipolar transistor 314, seventh insulated gate bipolar transistor 315, eighth insulated gate bipolar transistor 316, third diode 321, fourth diode 322, fifth diode 323, sixth diode 324, seventh diode 325, eighth diode 326, plastic package 40, heat sink 50, pin 60. DETAILED DESCRIPTION

[0033] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] Intelligent power module is a highly intelligent power switching device. It integrates power chip and control chip inside. It has the characteristics of high speed and low power consumption. It also has protection functions such as undervoltage protection, overheat protection, overcurrent protection and short circuit protection. It is widely used in home appliances, industry, energy and other industries due to its small size, compact layout and convenient use. Conventional intelligent power module mainly contains driver chip and three-phase full-bridge power chip. The driver chip controls the switch of power chip to convert DC into controllable AC for motor drive or DC / AC application. It does not have the function of AC to DC conversion.

[0035] In applications with high power, in order to improve energy efficiency and reduce harmonic interference, the front-end power supply part, that is, the AC mains to DC power conversion, will use a PFC power supply circuit, resulting in the power supply circuit occupying an increasingly larger area of ​​the PCB board, which not only directly pushes up the manufacturing cost of the PCB board, but also increases the purchase cost of components, insulating silicone sheets and heat sinks, thereby significantly increasing the cost of the entire system. In addition, the high carrier frequency characteristics of the power devices in the power supply part and the increase in the length of the PCB traces will significantly aggravate the EMC (Electromagnetic Compatibility) interference problem, making the PCB layout design more complex and challenging.

[0036] One of the core concepts of the embodiments of the present invention is that by integrating the power factor correction circuit inside the intelligent power module, it is avoided that the power factor correction circuit is located in the front-end power supply part, which causes the power supply part circuit to occupy too large an area of ​​the PCB board, thereby causing the cost of the entire system to increase significantly, thereby reducing the cost.

[0037] Reference Figure 1 , shows a schematic diagram of the structure of an intelligent power module according to an embodiment of the present invention, which may specifically include the following structure:

[0038] The intelligent power module 100 includes a driving circuit 10, a power factor correction circuit 20 and an inverter circuit 30;

[0039] The driving circuit 10 is connected to the power factor correction circuit 20 and the inverter circuit 30 , and is used to control the working states of the power factor correction circuit 20 and the inverter circuit 30 .

[0040] In the intelligent power module, the drive circuit is the key part connecting the control circuit and the power device. It is responsible for converting the control signal into a drive signal suitable for the power device and ensuring the safe and reliable operation of the power device. The drive circuit plays a bridge role in the IPM module, which not only ensures the fast transmission of the signal, but also has a protection function. The PWM signal output by the drive circuit control circuit is transmitted to the driver chip through the isolation device, and the PWM (Pulse Width Modulation) signal is converted into a drive signal suitable for the power device, and amplified by the drive output stage to provide sufficient current and voltage. The drive signal acts on the gate or gate of the power device to control its switching state. The protection circuit monitors the state of the power device in real time. When an abnormality (such as overcurrent, overvoltage, short circuit or overtemperature) is detected, the power device is quickly shut down to prevent damage.

[0041] The power factor correction circuit 20 is connected to the inverter circuit 30, and includes multiple metal oxide semiconductor field effect transistors 21. The power factor correction circuit 20 is used to transmit a DC voltage to the inverter circuit 30 after rectifying the received first AC voltage when the multiple metal oxide semiconductor field effect transistors 21 are in different working states.

[0042] The power factor correction circuit is a circuit used to improve the power factor of the power supply system. The power factor (PF) is an important indicator to measure the efficiency of the power supply system. It represents the ratio of active power to apparent power. The main purpose of the power factor correction circuit is to reduce the reactive power in the power supply system and improve the power factor, thereby improving the efficiency of the power supply and reducing the burden on the power grid. The types of power factor correction circuits include passive PFC and active PFC. Active PFC usually adopts a boost topology. Its working principle is as follows: AC is converted into DC through a rectifier bridge (such as a diode bridge), and the DC voltage is increased to a higher voltage level through a boost switching power supply. PWM is used to control the switching action of the switching device, and the waveform of the output voltage and current is adjusted to synchronize with the waveform of the input voltage. The control circuit monitors the phase difference of the input current and voltage in real time, and adjusts the duty cycle of the PWM signal to make the waveform of the input current consistent with the waveform of the input voltage, thereby achieving power factor correction.

[0043] The inverter circuit 30 is used for receiving a DC voltage and converting the DC voltage into a second AC voltage for transmission to a load.

[0044] The inverter circuit is responsible for converting direct current into alternating current. The inverter circuit converts direct current into alternating current through the switching action of the switching device. Its basic working principle is as follows: the input of the inverter circuit is direct current, usually from a battery, solar panel or rectified alternating current. By controlling the switching state of the switching device (on or off), the direct current is converted into pulsed alternating current, and the pulsed alternating current is converted into a smooth sinusoidal alternating current through a filtering circuit (such as an LC filter).

[0045] The intelligent power module of the embodiment of the present invention includes a driving circuit, a power factor correction circuit and an inverter circuit; the driving circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the working state of the power factor correction circuit and the inverter circuit; the power factor correction circuit is connected to the inverter circuit, and includes a plurality of metal oxide semiconductor field effect transistors, and the power factor correction circuit is used to transmit a DC voltage to the inverter circuit after rectifying the received first AC voltage when the plurality of metal oxide semiconductor field effect transistors are in different working states; the inverter circuit is used to receive the DC voltage and convert the DC voltage into a second AC voltage to transmit to the load. By integrating the power factor correction circuit inside the intelligent power module, it is avoided that the power factor correction circuit is located in the front-end power supply part, resulting in the power supply part circuit occupying too large an area of ​​the PCB board, which causes the cost of the entire system to rise significantly, thereby reducing the cost.

[0046] Reference Figure 2 , showing a schematic structural diagram of another intelligent power module according to an embodiment of the present invention, the power factor correction circuit 20 further includes a plurality of diodes, a plurality of insulated gate bipolar transistors and a plurality of fast recovery diodes;

[0047] A plurality of insulated gate bipolar transistors are respectively connected in parallel with a plurality of fast recovery diodes;

[0048] The plurality of MOSFETs 21 are respectively connected in parallel with the plurality of diodes.

[0049] The fast recovery diode may be a Si (silicon) fast recovery diode or a SiC SBD (Silicon Carbide Schottky Barrier Diode).

[0050] Si fast recovery diode is a diode based on silicon material with fast recovery characteristics. It is mainly used in high-frequency switching circuits, especially in applications such as power supplies, inverters, frequency converters and motor drives that require fast switching actions. The main feature of the fast recovery diode is its short reverse recovery time, which can effectively reduce switching losses and electromagnetic interference. The main features of Si fast recovery diodes: The reverse recovery time of fast recovery diodes is very short, usually between tens of nanoseconds (ns) and hundreds of nanoseconds. The reverse recovery time refers to the time required for the reverse current to drop from the peak to zero when the diode switches from the on state to the off state. The shorter reverse recovery time can reduce switching losses and improve circuit efficiency; the reverse recovery charge refers to the total amount of charge stored in the diode that is released during the reverse recovery process. Low reverse recovery charge can reduce energy loss during the switching process and improve circuit efficiency; Si fast recovery diodes usually have a higher reverse withstand voltage capability and are suitable for high-voltage application scenarios; in the on state, the forward voltage drop of the fast recovery diode is low, which can reduce conduction losses; due to its fast recovery characteristics, Si fast recovery diodes are very suitable for high-frequency switching circuits, such as switching power supplies (SMPS), inverters and frequency converters.

[0051] Silicon carbide Schottky diode is a Schottky diode based on silicon carbide (SiC) material with excellent high frequency characteristics, low conduction loss and high temperature performance.

[0052] In the embodiment of the present invention, the plurality of metal oxide semiconductor field effect transistors 21 include a first metal oxide semiconductor field effect transistor 211 and a second metal oxide semiconductor field effect transistor 212, the plurality of diodes include a first diode 221 and a second diode 222, the insulated gate bipolar transistor includes a first insulated gate bipolar transistor 231 and a second insulated gate bipolar transistor 232, and the fast recovery diode includes a first fast recovery diode 241 and a second fast recovery diode 242;

[0053] The first insulated gate bipolar transistor 231 is connected in parallel with the first fast recovery diode 241; the second insulated gate bipolar transistor 232 is connected in parallel with the second fast recovery diode 242;

[0054] The first MOSFET 211 is connected in parallel with the first diode 221 , and the second MOSFET 212 is connected in parallel with the second diode 222 ;

[0055] The first insulated gate bipolar transistor 231, the first fast recovery diode 241, the first metal oxide semiconductor field effect transistor 211 and the first diode 221 are located in the upper bridge arm, and the second insulated gate bipolar transistor 232, the second fast recovery diode 242, the second metal oxide semiconductor field effect transistor 212 and the second diode 222 are located in the lower bridge arm.

[0056] Figure 2 The triangle in the figure is a pin that needs to be led out. The first insulated gate bipolar transistor 231 of the upper bridge arm is connected in parallel with the first fast recovery diode 241, and the second insulated gate bipolar transistor 232 of the lower bridge arm is connected in parallel with the second fast recovery diode 242. In half a mains cycle, only one of the two parallel devices needs to be driven. The driving is simple and the cost is lower than that of SiC / GaN (gallium nitride). Compared with Si MOS (Silicon Metal-Oxide-Semiconductor), the energy efficiency is higher and the cost is lower.

[0057] In half a mains cycle, only one device, Q1 or Q2, needs to be driven, depending on the direction of the current: in the positive half cycle, Q1 (upper tube) is driven to turn on, and the current flows from top to bottom; in the negative half cycle, Q2 (lower tube) is driven to turn on, and the current flows from bottom to top. In each half cycle, the other insulated gate bipolar transistor remains in the off state. The fast recovery diode is connected in parallel with the insulated gate bipolar transistor to handle reverse current and freewheeling. When the insulated gate bipolar transistor is turned off, the fast recovery diode will turn on to help the current continue to flow and avoid reverse voltage spikes.

[0058] For Q3 of the upper bridge arm and Q4 of the lower bridge arm in the full-bridge circuit, the embodiment of the present invention adopts a hybrid solution of metal oxide semiconductor field effect transistors and diodes in parallel, so that under full current (low current and high current), compared with using pure metal oxide semiconductor field effect transistors or pure diodes, the conduction loss is smaller and the surge resistance is stronger.

[0059] In the embodiment of the present invention, the power factor correction circuit 20 further includes a capacitor 25;

[0060] The capacitor 25 is connected to the inverter circuit 30 and is used to transmit a DC voltage to the inverter circuit 30 .

[0061] In active PFC circuits, capacitors are mainly used for filtering and energy storage, especially in boost PFC circuits. In boost PFC circuits, output capacitors are used to smooth the output voltage and make it more stable. Output capacitors are usually high-capacity electrolytic capacitors or solid-state capacitors that can store a lot of energy. When the switching device is turned off, the energy stored in the output capacitor can power the load to ensure the stability of the output voltage. The output capacitor can reduce the ripple of the output voltage and improve the efficiency and stability of the system. In some active PFC circuits, capacitors are also used for filtering at the input end to reduce high-frequency noise and harmonics. In passive PFC circuits, capacitors are usually used together with inductors to form passive filters to improve the waveform of the input current, making it closer to a sine wave, thereby improving the power factor. Capacitors can filter out high-frequency harmonic components in the input current, making the input current closer to a sine wave, thereby improving the power factor. Capacitors are charged in the positive half cycle of the alternating current and discharged in the negative half cycle, playing the role of energy storage and release, reducing the difference between the peak and valley values ​​of the current. By cooperating with inductors, capacitors can reduce the harmonic distortion of the input current.

[0062] In the embodiment of the present invention, the power factor correction circuit 20 is used to charge the capacitor 25 when the first fast recovery diode 241 and the second metal oxide semiconductor field effect transistor 212 are turned on.

[0063] In the embodiment of the present invention, the power factor correction circuit 20 is used to charge the capacitor 25 when the first diode 221 and the second insulated gate bipolar transistor 232 are turned on.

[0064] In the embodiment of the present invention, the inverter circuit 30 includes a plurality of insulated gate bipolar transistors and a plurality of diodes, and the plurality of insulated gate bipolar transistors are respectively connected in parallel with the plurality of diodes.

[0065] In the embodiment of the present invention, the plurality of insulated gate bipolar transistors include a third insulated gate bipolar transistor 311, a fourth insulated gate bipolar transistor 312, a fifth insulated gate bipolar transistor 313, a sixth insulated gate bipolar transistor 314, a seventh insulated gate bipolar transistor 315 and an eighth insulated gate bipolar transistor 316, and the plurality of diodes include a third diode 321, a fourth diode 322, a fifth diode 323, a sixth diode 324, a seventh diode 325 and an eighth diode 326.

[0066] The inverter circuit 30 can be a three-phase full-bridge inverter circuit for converting direct current into three-phase alternating current. The three-phase full-bridge inverter circuit is composed of 6 switching devices, a third insulated gate bipolar transistor 311, a fourth insulated gate bipolar transistor 312, a fifth insulated gate bipolar transistor 313, a sixth insulated gate bipolar transistor 314, a seventh insulated gate bipolar transistor 315 and an eighth insulated gate bipolar transistor 316, which are divided into two groups, each with three switching devices, respectively controlling the three-phase output. Each switching device is connected in parallel with a diode, a third diode 321, a fourth diode 322, a fifth diode 323, a sixth diode 324, a seventh diode 325 and an eighth diode 326, for processing reverse current and freewheeling. The topology of the three-phase full-bridge inverter circuit is: Q1, Q3, Q5: upper bridge arm switches (controlling the positive half cycle); Q2, Q6, Q4: lower bridge arm switches (controlling the negative half cycle). The three-phase full-bridge inverter circuit generates three-phase AC power by controlling the on and off of six switching devices. Its working principle is as follows: each switching device is turned on and off at different time points to control the direction and magnitude of the current. The output voltage of each phase is determined by the switch state of the upper bridge arm and the lower bridge arm. By controlling the on time of the switching device, different shapes of output waveforms can be generated. Square wave output is simple but has high harmonic content. PWM (pulse width modulation) output generates an output close to a sine wave by adjusting the pulse width, which has low harmonic content. The phase difference between the three-phase output voltage is 120°, forming a symmetrical three-phase AC power.

[0067] In the embodiment of the present invention, the intelligent power module 100 further includes a substrate, on which the driving circuit 10, the power factor correction circuit 20 and the inverter circuit 30 are arranged, and the substrate is a direct-bonded copper structure.

[0068] The substrate adopts an insulating DBC (Direct Bonded Copper) structure, eliminating the use of insulating silicone sheets for multiple devices. DBC is a ceramic substrate with a copper layer on the surface, which is used to carry power devices (such as IGBT, MOSFET, etc.). The ceramic substrate provides excellent insulation performance, while the copper layer is used for heat dissipation and electrical connection. The typical material of DBC is aluminum oxide (Al2O3) or aluminum nitride (AlN), which has high thermal conductivity and high electrical insulation. The working principle of the DBC structure is: the power device is directly welded on the copper layer of the DBC, the copper layer is used for heat dissipation and electrical connection, and the ceramic substrate provides insulation to ensure electrical isolation between different devices. In traditional designs, multiple power devices need to use insulating silicone sheets (or insulating silicone sheets) to achieve electrical isolation. The role of insulating silicone sheets is to prevent electrical short circuits between different devices, while providing certain mechanical support and heat dissipation. The ceramic substrate of DBC itself has excellent insulation properties, so no additional insulating silicone sheets are required, which simplifies the manufacturing process of the module, reduces material costs and assembly steps, and eliminates the need for insulating silicone sheets to avoid electrical short circuits caused by aging or failure of the silicone sheets. The ceramic substrate and copper layer of DBC have high thermal conductivity, which can dissipate heat more efficiently and improve the performance and life of the module. Modules using an insulating DBC structure eliminate the need for insulating silicone sheets between multiple devices through the high insulation performance of the ceramic substrate. This design not only simplifies the manufacturing process, but also improves the reliability, heat dissipation performance and compactness of the module, making it suitable for high-power and high-density integrated application scenarios.

[0069] The embodiment of the present invention integrates the power factor correction circuit 20 into the intelligent power module 100. The power factor correction circuit 20 requires a 15V power supply, and the inverter circuit 30 also requires a 15V power supply. Therefore, the power supplies required by the power factor correction circuit 20 and the inverter circuit 30 can be combined into one. Moreover, the circuit is modularized, compact, and convenient to layout. The integrated drive circuit does not require debugging, which reduces the development workload. The integrated module has extremely small parasitic stray inductance, the system works more stably, the upper limit of the switching speed is higher, the loss is reduced, the efficiency is higher, and the energy efficiency is improved.

[0070] Reference Figure 3 , shows a schematic diagram of the structure of another intelligent power module according to an embodiment of the present invention, compared with Figure 2 , Figure 3 The power factor correction circuit 20 in the embodiment has two more wires. In this way, the driving circuit can be reduced, the driving speed can be increased, and the interference can be reduced.

[0071] Reference Figure 4 , which is a schematic diagram showing the internal structure of an intelligent power module according to an embodiment of the present invention, Figure 4 The internal structure of the intelligent power module Figure 2The driving circuit 10 is connected to the power factor correction circuit 20 and the inverter circuit 30 through gold wires. The driving circuit 10 is linked to the lead frame. The function of the lead frame is to support the welding of the chip and the interconnection of the internal circuit. The power factor correction circuit 20 and the inverter circuit 30 are connected to the substrate through aluminum wires. The driving circuit 10 includes multiple driving chips.

[0072] Reference Figure 5 , which is a schematic diagram showing the internal structure of an intelligent power module according to an embodiment of the present invention, Figure 5 The internal structure of the intelligent power module Figure 3 Corresponding to the intelligent power module, Figure 5 compared to Figure 4 Two new bonding wires are added, which share the same ground with the driving line sheet of the driving circuit 10, so that the driving loop can be smaller and the response speed can be faster.

[0073] Reference Figure 6 , showing a schematic diagram of the appearance of an intelligent power module according to an embodiment of the present invention, the outside of the intelligent power module 100 includes a plastic package 40, a heat sink 50 and a pin 60. The main function of the plastic package 40 is to protect the chip inside the intelligent power module 100 and prevent it from being eroded and damaged by the external environment (such as moisture, dust, mechanical impact, etc.), thereby ensuring the long-term stable operation of the intelligent power module 100. The main function of the pin 60 is to achieve electrical connection between the intelligent power module 100 and the external circuit to ensure the transmission of signals and power. The main function of the heat sink 50 is to effectively reduce the thermal resistance of the intelligent power module 100 and improve its heat dissipation efficiency, thereby ensuring that the intelligent power module 100 can operate stably under high-power working conditions and extend its service life.

[0074] The intelligent power module of the embodiment of the present invention integrates AC / DC and DC / AC circuits, as well as related driver ICs, reduces the number of components, reduces packaging costs, reduces PCB area and heat sink volume, eliminates the use of silicone sheets, and reduces system costs; the circuit layout is simpler, reducing development work; parasitic parameters are reduced, and the system is more efficient and stable. It can solve the current problems of a large number of components, long PCB traces and large area, high overall system cost, high development difficulty and long cycle, low integration, large loop spurious leading to unstable operation, or reducing overall performance and efficiency to ensure system stability.

[0075] By integrating the power factor correction circuit into the intelligent power module, the cost of the system can be reduced, the area of ​​the PCB board occupied by the system can be reduced, the number of components can be reduced, and the overall packaging cost can be reduced by integrating into the module. The size of the heat sink is reduced, and the insulating DBC structure is adopted to eliminate the use of insulating silicone sheets. The two 15V power supplies of PFC and inverter can be combined into one; development is convenient, the cycle is shortened, the circuit is modularized, the appearance is compact, the layout is convenient, the drive circuit is integrated, no debugging is required, and the development workload is reduced; the operation is more stable, the integrated module, the parasitic stray inductance, the system operation is more stable, the upper limit of the switching speed is higher, the loss is reduced, the efficiency is higher, and the energy efficiency is improved.

[0076] In the embodiment of the present invention, the intelligent power module can be manufactured in the following manner:

[0077] Slicing. To cut the whole wafer into individual chips, first stick the wafer on the blue film and steel ring, and then use the dicing equipment to cut the wafer into individual chips to facilitate the next step of processing.

[0078] Wafers are the basic materials for semiconductor manufacturing, usually made of silicon or other semiconductor materials. On wafers, hundreds or thousands of identical chips are manufactured through processes such as lithography, etching, and deposition. The entire wafer is cut into single chips for subsequent packaging and testing. Blue film is a special tape, usually composed of polyester film and adhesive. The function of the blue film is to firmly adhere the wafer to the cutting table to prevent the wafer from breaking or shifting during the cutting process. The steel ring is a metal ring used to support the blue film and wafer. The function of the steel ring is to provide additional mechanical strength to ensure that the wafer remains stable during the cutting process. The dicing equipment is a precision cutting tool, usually cut with a diamond blade or laser. The function of the dicing equipment is to cut the wafer into single chips along the predetermined cutting line (usually the scribe line between the chips). The dicing equipment cuts along the scribe line between the chips to divide the entire wafer into multiple independent chips. After the cutting is completed, the single chip is still adhered to the blue film, which is convenient for subsequent handling and processing. The single chip after cutting needs to be packaged and tested. Since the chip is still adhered to the blue film, it can be easily transferred to the packaging equipment for the next processing. The blue film not only protects the wafer during the cutting process, but also plays a role in transporting and protecting the chip in subsequent processes.

[0079] Solder paste printing. Take out the new DBC and place it in the fixture, transfer it to the equipment, put the steel mesh close to the fixture, and the scraper of the equipment will scrape the solder paste back and forth on the steel mesh, filling the solder paste on the DBC to form a pattern according to the pattern of the steel mesh.

[0080] DBC is a ceramic substrate covered with a copper layer on the surface, which is used to carry power devices. DBC has high thermal conductivity and excellent insulation properties. The fixture is a tool used to fix the DBC to ensure that the DBC remains stable in subsequent processes. The function of the fixture is to prevent the DBC from moving or tilting during operation. Transfer to the equipment, here refers to the solder paste printing equipment, which is used to accurately apply the solder paste to the DBC. The equipment usually includes components such as conveyor belts, steel meshes, and scrapers. The steel mesh is a thin metal sheet engraved with a pattern corresponding to the pads on the DBC. The function of the steel mesh is to accurately apply the solder paste to the pads of the DBC. The steel mesh needs to fit tightly on the fixture to ensure that the solder paste can accurately pass through the openings of the steel mesh and be applied to the DBC. A scraper is a rubber or metal tool used to evenly scrape solder paste across the steel mesh. The function of the scraper is to squeeze the solder paste out of the openings of the steel mesh to form a uniform solder paste layer. The scraper moves back and forth on the steel mesh to ensure that the solder paste is evenly distributed at the openings of the steel mesh. The opening pattern on the steel mesh corresponds to the pad pattern on the DBC. Through the scraping of the scraper, the solder paste will accurately fill the openings of the steel mesh to form a solder paste pattern corresponding to the DBC pad. The solder paste is used to solder electronic components (such as chips, resistors, capacitors, etc.) to the DBC in the subsequent reflow process.

[0081] Power chip mounting. Place the processed DBC on the mounting equipment, the equipment will transfer the DBC to the mounting station, the welding head of the equipment will grab the chip from the blue film and place it in the fixed position of the solder paste pattern on the DBC, and after completion, the DBC will be transferred out of the equipment.

[0082] The DBC here has completed the solder paste printing process, and the solder paste has been accurately coated on the pads of the DBC. The patch equipment is an automated device used to accurately place chips or other surface mount components (such as resistors, capacitors, etc.) on the substrate. The patch station is a specific position in the patch equipment for performing chip grabbing and placement operations. The DBC is transported to the patch station by a conveyor belt or other mechanical devices to ensure that the DBC is operated in the correct position. The soldering head is the core component of the patch equipment, usually equipped with a vacuum nozzle or other grabbing tools. The function of the soldering head is to grab the chip and place it accurately on the DBC. The soldering head grabs the chip from the blue film, which is a tape used to fix and protect the chip. The soldering head places the chip accurately in the solder paste pattern on the DBC to ensure that the chip is aligned with the pad. The chip is placed in the predetermined position to ensure that it can be properly soldered in the subsequent reflow process. When all chips are correctly placed on the DBC, the patch process is completed, and the DBC is transported out of the patch equipment by a conveyor belt or other mechanical devices to enter the next process step.

[0083] Frame assembly. Place the processed DBC in the fixture, and place the lead frame in the same fixture at the same time. After fixing, send the fixture to the reflow equipment. After reflow, the chip and DBC are welded by solder, and the lead frame and DBC are also welded by solder to form a whole.

[0084] The lead frame is a metal structure, usually made of copper or copper alloy, used to connect the chip and the external circuit. The role of the lead frame is to provide electrical connection and mechanical support. The DBC and the lead frame are fixed in the same fixture at the same time to ensure that they remain in relative position during the reflow process. The reflow equipment is a device for heating. By controlling the temperature curve, the solder paste is melted and a firm solder joint is formed. The role of the reflow equipment is to solder the chip and the lead frame to the DBC through solder. During the reflow process, the solder paste melts at high temperature to form liquid solder. The liquid solder connects the chip's pads with the DBC's pads to form a firm solder joint. After the reflow is completed, the chip and the DBC form a firm electrical and mechanical connection through solder. During the reflow process, the lead frame's pads are connected to the DBC's pads through solder. The welding of the lead frame ensures the electrical connection between the DBC and the external circuit. After the reflow is completed, the chip, DBC and lead frame are connected together through solder to form a complete packaging structure.

[0085] Cleaning process. After welding, the surface of the lead frame is contaminated by the volatiles in the solder paste, which can easily cause poor welding in the next process. Therefore, the lead frame will use chemical solutions to clean the volatiles on the surface of the lead frame. After cleaning and drying, the lead frame is sent to the next process.

[0086] During the reflow process, the flux in the solder paste will melt and volatilize some chemical substances (such as solvents, activators, etc.). These volatiles will remain on the surface of the lead frame and form pollution. Volatile pollution may cause poor welding in subsequent processes (such as secondary welding, packaging, etc.), such as cold welding, short circuit and other problems. Chemical solution is a solution specially used to clean welding residues, usually including organic solvents or water-based cleaning agents. The function of chemical solution is to dissolve and remove volatiles and residues on the surface of the lead frame. The welded lead frame is immersed in the chemical solution, or cleaned by spraying, ultrasonic and other methods. During the cleaning process, the chemical solution will dissolve and remove volatiles and residues on the surface of the lead frame. After cleaning, the lead frame needs to be dried to remove moisture or solvent residues on the surface. Drying is usually carried out in an oven, and the temperature and time are adjusted according to the type of cleaning agent and the material of the lead frame. After cleaning and drying, the lead frame is sent to the next process (such as packaging, testing, etc.) to ensure that its surface is clean to avoid affecting subsequent processes.

[0087] Driver chip mounting. The lead frame is transferred to the silver glue dispensing station by the mounting equipment. The equipment will spray an appropriate amount of silver glue at the designated position of the lead frame, and then it will be transferred to the mounting station. The equipment will grab the chip from the blue film and place it on the silver glue. After completion, the lead frame is transferred out of the equipment, and then the lead frame is sent to the oven to cure the silver glue.

[0088] The chip mounting equipment is an automated device used to accurately place chips or other surface mount components (such as resistors, capacitors, etc.) on a substrate (such as a lead frame). The silver glue dispensing station is a specific position in the chip mounting equipment, which is used to spray silver glue on the lead frame. Silver glue is a conductive glue, usually composed of silver powder and epoxy resin, which is used to fix the chip on the lead frame and provide electrical connection. The equipment will spray an appropriate amount of silver glue at the specified position of the lead frame (usually the chip placement area) according to the preset program. The amount of silver glue needs to be precisely controlled to ensure that the chip can adhere firmly to the lead frame. The welding head grabs the chip from the blue film, which is a kind of tape used to fix and protect the chip. The welding head places the chip precisely on the silver glue on the lead frame to ensure good contact between the chip and the silver glue. When all the chips are correctly placed on the lead frame, the patch process is completed. The lead frame is conveyed out of the patch equipment by a conveyor belt or other mechanical device and enters the next process step (such as silver glue curing). The lead frame is sent into the oven and cured under high temperature conditions (usually around 150°C). During the curing process, the epoxy resin in the silver glue will harden to form a strong bond, and the silver powder provides conductivity.

[0089] Aluminum wire bonding. The lead frame is transferred to the equipment track by the aluminum wire bonding equipment, and the lead frame is fixed. The equipment will complete the ultrasonic welding of aluminum wires between chips and between chips and lead frames.

[0090] Aluminum wire bonding equipment is an automated device used to establish electrical connections between chips and between chips and lead frames. The equipment is usually equipped with an ultrasonic welding head and an aluminum wire feeding system. The lead frame is conveyed to the track of the aluminum wire bonding equipment by a conveyor belt or other mechanical devices to ensure that it is operated in the correct position. The lead frame is firmly fixed in the equipment track to ensure that it does not move or tilt during the bonding process. Fixing is usually achieved by clamps or other mechanical devices. Aluminum wire is a commonly used bonding material with good conductivity and plasticity. The diameter of the aluminum wire is usually between 10-50 microns and is used to establish tiny electrical connections.

[0091] Gold wire bonding. The lead frame is transferred to the equipment track by the equipment and fixed firmly. The gold wire bonding equipment will electrically connect the power chip with the driver chip, and the driver chip with the lead frame through gold wire bonding, completing the internal electrical performance interconnection of the IPM.

[0092] Plastic encapsulation. The lead frame is placed inside the cavity of the high-temperature plastic encapsulation mold. After the upper and lower molds are closed, the cavity is vacuumed. After the set time, the melted plastic encapsulation material is injected into the cavity of the mold to fill the cavity gap. After the injection is completed, the mold is opened and the IPM plastic encapsulation work is completed.

[0093] The IPM after plastic molding is sent to a high temperature box to cure at 150°C for 6 hours.

[0094] Rib cutting and forming. The entire lead frame is sent to the rib cutting equipment, and the equipment mold will punch and cut the rib position of the lead frame and bend the IPM pins into a shape that conforms to the product drawing.

[0095] Printing. The IPM is fed into a printing device, which prints specific information on the plastic package.

[0096] FT (Final Test) test. The IPM is sent to the FT test equipment to complete the electrical performance test of the IPM.

[0097] Packing and shipment. Products that pass the FT test can be shipped after being packaged.

[0098] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0099] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0100] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0101] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0102] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0103] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0104] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0105] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0106] The above is a detailed introduction to an intelligent power module and chip provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. An intelligent power module, characterized in that: The intelligent power module includes a driving circuit, a power factor correction circuit and an inverter circuit; The driving circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the working states of the power factor correction circuit and the inverter circuit; The power factor correction circuit is connected to the inverter circuit and includes a plurality of metal oxide semiconductor field effect transistors. The power factor correction circuit is used to transmit a DC voltage to the inverter circuit after rectifying the received first AC voltage when the plurality of metal oxide semiconductor field effect transistors are in different working states respectively; The inverter circuit is used for receiving the DC voltage and converting the DC voltage into a second AC voltage for transmission to a load.

2. The intelligent power module according to claim 1, characterized in that: The power factor correction circuit also includes a plurality of diodes, a plurality of insulated gate bipolar transistors and a plurality of fast recovery diodes; The plurality of insulated gate bipolar transistors are respectively connected in parallel with the plurality of fast recovery diodes; The plurality of metal oxide semiconductor field effect transistors are respectively connected in parallel with the plurality of diodes.

3. The intelligent power module according to claim 2, characterized in that: The plurality of metal oxide semiconductor field effect transistors include a first metal oxide semiconductor field effect transistor and a second metal oxide semiconductor field effect transistor, the plurality of diodes include a first diode and a second diode, the insulated gate bipolar transistor includes a first insulated gate bipolar transistor and a second insulated gate bipolar transistor, and the fast recovery diode includes a first fast recovery diode and a second fast recovery diode; The first insulated gate bipolar transistor is connected in parallel with the first fast recovery diode; the second insulated gate bipolar transistor is connected in parallel with the second fast recovery diode; The first metal oxide semiconductor field effect transistor is connected in parallel with the first diode, and the second metal oxide semiconductor field effect transistor is connected in parallel with the second diode; The first insulated gate bipolar transistor, the first fast recovery diode, the first metal oxide semiconductor field effect transistor and the first diode are located in the upper bridge arm, and the second insulated gate bipolar transistor, the second fast recovery diode, the second metal oxide semiconductor field effect transistor and the second diode are located in the lower bridge arm.

4. The intelligent power module according to claim 3, characterized in that: The power factor correction circuit also includes a capacitor; The capacitor is connected to the inverter circuit and is used to transmit a DC voltage to the inverter circuit.

5. The intelligent power module according to claim 4, characterized in that: The power factor correction circuit is used for charging the capacitor when the first fast recovery diode and the second metal oxide semiconductor field effect transistor are turned on.

6. The intelligent power module according to claim 4, characterized in that: The power factor correction circuit is used to charge the capacitor when the first diode and the second insulated gate bipolar transistor are turned on.

7. The intelligent power module according to claim 1, characterized in that: The inverter circuit includes a plurality of insulated gate bipolar transistors and a plurality of diodes, and the plurality of insulated gate bipolar transistors are respectively connected in parallel with the plurality of diodes.

8. The intelligent power module according to claim 7, characterized in that: The multiple insulated gate bipolar transistors include a third insulated gate bipolar transistor, a fourth insulated gate bipolar transistor, a fifth insulated gate bipolar transistor, a sixth insulated gate bipolar transistor, a seventh insulated gate bipolar transistor and an eighth insulated gate bipolar transistor, and the multiple diodes include a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode and an eighth diode.

9. The intelligent power module according to claim 1, characterized in that: The intelligent power module further comprises a substrate, the driving circuit, the power factor correction circuit and the inverter circuit are arranged on the substrate, and the substrate is a direct-bonded copper structure.

10. A chip, characterized in that: The chip includes an intelligent power module as claimed in any one of claims 1 to 9.

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