Light-emitting device

By introducing a capacitance plate layer and a capacitance insulating layer into the OLED light emitting device, the black spot and bright spot problems caused by electrostatic action are solved, and the reliability and life of the light emitting device are improved.

CN119767991APending Publication Date: 2025-04-04GUAN YEOLIGHT TECH CO LTD
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Patent Information

Application Number
CN202411973730.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

During the production and use of OLED light emitting devices, black spots and highlights are likely to occur. The main reasons are charge adsorption and discharge caused by electrostatic action, damage to the light emitting unit and electrode leads, and reducing the reliability and life of the device.

Method used

The capacitance plate layer and a capacitance insulating layer are introduced into the light emitting device. The capacitance plate layer includes at least one capacitance plate. The vertical projection of the capacitance plate overlies the corresponding light emitting units to form an electrostatic discharge capacitance to preferentially absorb the electrostatic charge.

Benefits of technology

Through the design of electrostatic discharge capacitors, electrostatic charges preferentially act on the capacitor plate and electrode leads rather than directly act on the light emitting unit, avoiding static damage to the light emitting unit and electrode leads, and improving the reliability and life of the light emitting device.

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Abstract

The invention discloses a light-emitting device which comprises a capacitor polar plate layer, a capacitor insulating layer, a wiring layer and a light-emitting structure layer. The capacitor plate layer comprises at least one capacitor plate; each capacitor plate corresponds to at least one light-emitting unit, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the corresponding light-emitting unit; the first electrode comprises a first edge, and the second electrode comprises a second edge; the vertical projection of the capacitor plate on the light-emitting structure layer covers the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer comprises a third edge, the third edge is adjacent to the second edge, and the distance between the third edge and the first edge and the distance between the third edge and the second edge are both larger than 0. The reliability and the service life of the light-emitting device can be improved.
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Description

Technical Field

[0001] The present invention relates to the field of organic light emitting technology, and in particular to a light emitting device. Background Art

[0002] Organic Light-Emitting Diode (OLED) light-emitting devices are prone to problems such as black spots and bright spots during production and use. One important reason is static electricity. Static charges are adsorbed on the surface of the product, reach the inside of the screen through electrode wires or human contact, and act on the device structure, causing black spots or bright spots, reducing device reliability and screen life. Summary of the invention

[0003] The present invention provides a light emitting device to improve the reliability and life of the light emitting device.

[0004] According to one aspect of the present invention, there is provided a light emitting device, comprising:

[0005] A substrate, a capacitor plate layer disposed on one side of the substrate, a capacitor insulating layer disposed on a side of the capacitor plate layer away from the substrate, a wiring layer disposed on a side of the capacitor insulating layer away from the capacitor plate layer, and a light emitting structure layer disposed on a side of the wiring layer away from the capacitor insulating layer;

[0006] The capacitor plate layer includes at least one capacitor plate, each of the capacitor plates corresponds to at least one light-emitting unit, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the corresponding light-emitting unit;

[0007] The light emitting structure layer comprises a plurality of light emitting units, each of the light emitting units comprises a first electrode, a light emitting layer and a second electrode which are stacked, and the second electrode is arranged on a side of the light emitting layer away from the substrate;

[0008] The first electrode includes a first edge, the second electrode includes a second edge, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer includes a third edge, the third edge is adjacent to the second edge, and the distance between the third edge and the first edge and the second edge is greater than 0.

[0009] Optionally, the vertical projection of the capacitor plate on the light emitting structure layer covers the first edge and the second edge, and covers at least a portion of the vertical projection of a preset lead segment on the light emitting structure layer;

[0010] The routing layer includes a plurality of first electrode leads, the first electrodes are electrically connected to the first electrode leads, and different first electrodes are connected to different first electrode leads;

[0011] The second edge is arranged adjacent to a preset lead segment of the first electrode lead; wherein a vertical projection of the preset lead segment on the substrate is located outside a vertical projection of the second electrode on the substrate.

[0012] Optionally, the square resistance of the capacitor plate is greater than or equal to 0.1Ω / □ and less than or equal to 1000Ω / □.

[0013] Optionally, the thickness of the capacitor insulating layer is greater than or equal to 1 nm and less than or equal to 1000 nm.

[0014] Optionally, the capacitor plate layer is not connected to a potential, or the capacitor plate layer is electrically connected to the second electrode.

[0015] Optionally, the routing layer further includes a lapped conductive block, the second electrode is in contact and electrically connected with the lapped conductive block, and the lapped conductive block is used to transmit a set electrical signal to the second electrode;

[0016] The capacitor plate layer is electrically connected to the overlapping conductive block.

[0017] Optionally, the vertical projection of the capacitor plate on the light-emitting structure layer covers m light-emitting units.

[0018] C coup / C seg =K, m≥10*K; where C coup is the capacitance between the capacitor plate and the first electrode of a light-emitting unit, C seg is the equivalent capacitance value of a light-emitting unit, K is a positive number, and m is a positive integer.

[0019] Optionally, the routing layer further includes a first external pin and a second external pin;

[0020] The first electrode lead is electrically connected to the first external pin;

[0021] The overlapping conductive block is electrically connected to the second external pin.

[0022] Optionally, the first electrode is a light-transmitting electrode, the second electrode is a reflective electrode, and the capacitor plate layer is made of a light-transmitting conductive material; or, the first electrode is a reflective electrode, the second electrode is a light-transmitting electrode, and the capacitor plate layer is made of a conductive material.

[0023] Optionally, the second electrodes of all the light-emitting units are electrically connected to each other to form a whole electrode;

[0024] The first electrode lead is arranged on at least one side of the area where all the light emitting units are located, and the second electrode includes at least one second edge.

[0025] The light-emitting device of the embodiment of the present invention is provided with a capacitor plate layer and a capacitor insulating layer, the capacitor plate layer includes at least one capacitor plate; the vertical projection of the capacitor plate on the light-emitting structure layer covers the corresponding light-emitting unit, the first electrode includes a first edge, the second electrode includes a second edge, the second edge is arranged adjacent to a preset lead segment of the first electrode lead, and the first edge is arranged adjacent to the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer covers the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer includes a third edge, the third edge is adjacent to the second edge, and the distances between the third edge and the first edge and the second edge are both greater than 0. This makes the distance between the capacitor plate and the preset lead segment of the first electrode lead closer. When static electricity acts on structures such as the first electrode lead, static electricity preferentially charges the capacitor plate and the first electrode and the electrostatic release capacitor formed by the capacitor plate and the first electrode lead. That is, static electricity preferentially acts on the electrostatic release capacitor rather than directly acting on the light-emitting unit, which can avoid static electricity damaging the light-emitting unit. Since the electrostatic release capacitor can be set to a larger capacitance value and is not easily broken down, static electricity can be avoided to damage the first electrode lead. Therefore, the embodiment of the present invention can improve the reliability and life of the light-emitting device, and the embodiment of the present invention only needs to add a capacitor insulation layer and a capacitor plate layer, and the manufacturing process is simple.

[0026] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 It is a top view of a light emitting device provided by an embodiment of the present invention.

[0029] Figure 2 yes Figure 1 A cross-sectional view of the light emitting device along section line AA.

[0030] Figure 3 It is a schematic diagram of equivalent capacitance of a light emitting device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] During the use of OLED light-emitting devices, whether it is the discharge of static electricity from the human body or the equipment to the OLED, the hazards of static electricity are objectively present. Since the current OLED light-emitting devices are designed with multiple partitions in order to pursue the diversity of lighting effects and the interactivity of information, the general design is to pattern the electrodes on the substrate and then connect them to the electrode binding area outside the package through electrode leads. In order to increase the aperture ratio of the light-emitting device, the electrode leads are usually designed to be narrower. Such static electricity is very easy to break down during the discharge process, causing the screen to short-circuit or open-circuit, resulting in failure.

[0034] Currently, the commonly used method is to add an electrostatic protection circuit to the external circuit or to add a voltage-sensitive circuit to the device, both of which increase the difficulty of manufacturing the light-emitting device.

[0035] Based on the above problems, an embodiment of the present invention provides a light emitting device, including:

[0036] A substrate, a capacitor plate layer disposed on one side of the substrate, a capacitor insulating layer disposed on a side of the capacitor plate layer away from the substrate, a wiring layer disposed on a side of the capacitor insulating layer away from the capacitor plate layer, and a light emitting structure layer disposed on a side of the wiring layer away from the capacitor insulating layer;

[0037] The capacitor plate layer includes at least one capacitor plate, each capacitor plate corresponds to at least one light-emitting unit, and a vertical projection of the capacitor plate on the light-emitting structure layer covers the corresponding light-emitting unit;

[0038] The light emitting structure layer includes a plurality of light emitting units, each of which includes a first electrode, a light emitting layer and a second electrode which are stacked, and the second electrode is arranged on a side of the light emitting layer away from the substrate;

[0039] The first electrode includes a first edge, the second electrode includes a second edge, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer includes a third edge, the third edge is adjacent to the second edge, and the distances between the third edge and the first edge and the second edge are both greater than 0.

[0040] In the embodiment of the present invention, a vertical projection of a capacitor plate is set on the light-emitting structure layer to cover the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer includes a third edge, the third edge is adjacent to the second edge, and the distances between the third edge and the first edge and the second edge are both greater than 0, so that static electricity preferentially acts on the capacitor plate, and preferentially charges the electrostatic release capacitor formed by structures such as the capacitor plate and the first electrode, that is, static electricity preferentially acts on the electrostatic release capacitor rather than directly acting on the light-emitting unit, thereby avoiding static electricity from damaging the light-emitting unit. Since the electrostatic release capacitor can be set to a larger capacitance value and is not easily broken down, static electricity can avoid damaging structures such as leads in the light-emitting device. Therefore, the embodiment of the present invention can improve the reliability and life of the light-emitting device, and the embodiment of the present invention only needs to add a capacitor insulation layer and a capacitor plate layer, and the manufacturing process is simple.

[0041] The present invention will be described below in conjunction with specific embodiments. Figure 1 is a top view of a light emitting device provided by an embodiment of the present invention, Figure 2 yes Figure 1 The cross-sectional view of the light emitting device along the section line AA, refer to Figure 1 and Figure 2 , the light emitting device comprises:

[0042] A substrate 10, a capacitor plate layer 20 disposed on one side of the substrate 10, a capacitor insulating layer 30 disposed on a side of the capacitor plate layer 20 away from the substrate 10, a wiring layer 50 disposed on a side of the capacitor insulating layer 30 away from the capacitor plate layer 20, and a light emitting structure layer 40 disposed on a side of the wiring layer 50 away from the capacitor insulating layer 30;

[0043] The capacitor plate layer 20 includes at least one capacitor plate 21;

[0044] The light emitting structure layer 40 includes a plurality of light emitting units 41, each of which includes a first electrode 411, a light emitting layer 412 and a second electrode 413 which are stacked, and the second electrode 413 is disposed on a side of the light emitting layer 412 away from the substrate 10;

[0045] The wiring layer 50 includes a plurality of first electrode leads 51, the first electrodes 411 are electrically connected to the first electrode leads 51, and different first electrodes 411 are connected to different first electrode leads 51;

[0046] Each capacitor plate 21 corresponds to at least one light-emitting unit 41, and the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 covers the corresponding light-emitting unit 41; the first electrode 411 includes a first edge 61, and the second electrode 413 includes a second edge 62, the second edge 62 is arranged adjacent to a preset lead segment of the first electrode lead 51, and the first edge 61 is arranged adjacent to the second edge 62; wherein the vertical projection of the preset lead segment on the substrate 10 is located outside the vertical projection of the second electrode 413 on the substrate 10; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 covers the first edge 61 and the second edge 62; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 includes a third edge 63, the third edge 63 is adjacent to the second edge 62, and the distances between the third edge 63 and the first edge 61 and the second edge 62 are both greater than 0.

[0047] The light-emitting unit 41 may be an organic light-emitting unit, and the light-emitting layer 412 may be an organic light-emitting layer. One of the first electrode 411 and the second electrode 413 is a cathode, and the other is an anode. The area directly facing the first electrode 411, the light-emitting layer 412, and the second electrode 413 is the light-emitting unit 41, that is, the area of ​​the light-emitting unit 41 is the area of ​​the overlapped area of ​​the first electrode 411, the light-emitting layer 412, and the second electrode 413. Exemplarily, the area of ​​the first electrode 411 is the smallest, and the vertical projections of the light-emitting layer 412 and the second electrode 413 on the first electrode 411 both cover the first electrode 411, and the area of ​​the light-emitting unit 41 is equal to the area of ​​the first electrode 411.

[0048] The capacitor plate layer 20 is made of a conductive material such as metal or metal oxide. Exemplarily, when the first electrode 411 is a light-transmitting electrode and the second electrode 413 is a reflective electrode, the capacitor plate layer 20 is made of a light-transmitting conductive layer, and exemplary, a transparent metal oxide can be used; when the first electrode 411 is a reflective electrode and the second electrode 413 is a light-transmitting electrode, the capacitor plate layer 20 can be made of any conductive material.

[0049] The first electrode lead 51 is disposed in a non-luminous area, and the non-luminous area includes an area between adjacent light-emitting units 41 and an area surrounding a plurality of light-emitting units 41. The vertical projection of the second electrode 413 on the substrate 10 may cover at least a portion of the vertical projection of a portion of the first electrode lead 51 on the substrate 10, and the vertical projection of a preset lead segment of the first electrode lead 51 on the substrate 10 is located outside the vertical projection of the second electrode 413 on the substrate 10. The second electrodes 413 of all light-emitting units 20 may be interconnected to form a whole layer of electrodes, or the second electrodes 413 of some light-emitting units 20 may be interconnected to form a whole block of electrodes, and the light-emitting structure layer 40 includes two or more whole blocks of electrodes. Figure 1 FIG. 4 is an exemplary diagram showing a situation where the second electrodes 413 of all light-emitting units 20 are connected to form a whole layer of electrodes. Figure 1 When the second electrodes 413 of all the light-emitting units 20 are connected to form a whole layer of electrodes, the second electrode 413 may include a plurality of second edges 62, each of which is adjacent to a preset lead segment of the first electrode lead 51 disposed on one side of the region where the plurality of light-emitting units 41 are located. A distance d1 between the first edge 61 and the third edge 63 is greater than 0, and a distance d2 between the second edge 62 and the third edge 63 is greater than 0.

[0050] For example, Figure 1 The second electrode 413 is rectangular, and the left edge, right edge and bottom edge of the four edges of the second electrode 413 are all adjacent to the preset lead segment of the first electrode lead 51, and are all second edges 62. The capacitor plate 21 can also be rectangular, and the left edge, right edge and bottom edge of the four edges of the capacitor plate 21 are all adjacent to the second edge 62, and are all third edges 63.

[0051] An electrostatic release capacitor is formed between the capacitor plate 21, the capacitor insulating layer 30 and the first electrode 411, and between the capacitor plate 21, the capacitor insulating layer 30 and the first electrode lead 51. The vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 covers the first edge 61 and the second edge 62; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 includes a third edge 63, the third edge 63 is adjacent to the second edge 62, and the distance between the third edge 63 and the first edge 61 and the second edge 62 is greater than 0, so that the capacitor plate 51 is closer to the preset lead segment of the first electrode lead 51. When static electricity acts on structures such as the first electrode lead 51, static electricity preferentially charges the electrostatic release capacitor formed by the capacitor plate 51 and the first electrode 411 and the capacitor plate 21 and the first electrode lead 51, that is, static electricity preferentially acts on the electrostatic release capacitor rather than directly acting on the light-emitting unit 41, so that static electricity can avoid damaging the light-emitting unit. Since the electrostatic release capacitor can be set with a larger capacitance value and is not easily broken down, static electricity can avoid damaging the first electrode lead 51.

[0052] The light-emitting device of the embodiment of the present invention is provided with a capacitor plate layer 20 and a capacitor insulating layer 30, wherein the capacitor plate layer 20 includes at least one capacitor plate 21; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 covers the corresponding light-emitting unit 41, the first electrode 411 includes a first edge 61, the second electrode 413 includes a second edge 62, the second edge 62 is arranged adjacent to a preset lead segment of the first electrode lead 51, and the first edge 61 is arranged adjacent to the second edge 62; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 covers the first edge 61 and the second edge 62; the vertical projection of the capacitor plate 21 on the light-emitting structure layer 40 includes a third edge 63, the third edge 63 is adjacent to the second edge 62, and the distances between the third edge 63 and the first edge 61 and the second edge 62 are both greater than 0. The capacitor plate 51 is made closer to the preset lead segment of the first electrode lead 51. When static electricity acts on the first electrode lead 51 and other structures, static electricity preferentially charges the electrostatic release capacitor formed by the capacitor plate 51 and the first electrode 411 and the capacitor plate 21 and the first electrode lead 51. That is, static electricity preferentially acts on the electrostatic release capacitor rather than directly acting on the light-emitting unit 41, thereby avoiding static electricity from damaging the light-emitting unit 41. Since the electrostatic release capacitor can be set to a larger capacitance value and is not easily broken down, static electricity from damaging the first electrode lead 51 can be avoided. Therefore, the embodiment of the present invention can improve the reliability and life of the light-emitting device, and the embodiment of the present invention only needs to add a capacitor insulation layer 30 and a capacitor plate layer 20, and the manufacturing process is simple.

[0053] Based on the above embodiment, optionally, the vertical projection of the capacitor plate 21 on the light emitting structure layer 40 covers the first edge 61 and the second edge 62 , and covers at least a portion of the vertical projection of the preset lead segment on the light emitting structure layer 40 .

[0054] Such an arrangement enables the capacitor plate 21 and the first electrode lead 51 to have a larger facing area, and a larger electrostatic release capacitor can be formed between the capacitor plate 21 and the first electrode lead 51. When static electricity acts on the first electrode lead 51, it is further ensured that static electricity preferentially charges the electrostatic release capacitor formed by the capacitor plate 51 and the first electrode 411 and the capacitor plate 21 and the first electrode lead 51, thereby avoiding static electricity from damaging the light-emitting unit 41 and the first electrode lead 51.

[0055] On the basis of the above embodiment, optionally, the square resistance of the capacitor plate 21 is greater than or equal to 0.1Ω / □, and less than or equal to 1000Ω / □; preferably, the square resistance of the capacitor plate 21 is greater than or equal to 0.5Ω / □, and less than or equal to 100Ω / □. Exemplarily, the square resistance of the capacitor plate 21 can be 0.1Ω / □, 0.5Ω / □, 1Ω / □, 5Ω / □, 10Ω / □, 20Ω / □, 30Ω / □, 40Ω / □, 50Ω / □, 60Ω / □, 70Ω / □, 80Ω / □, 90Ω / □, 100Ω / □, 500Ω / □ or 1000Ω / □.

[0056] This arrangement makes the capacitor plate 21 more conductive, so that when static electricity acts on the light-emitting device, the capacitor plate 21 has a faster charging rate, further ensuring that static electricity preferentially acts on the capacitor plate 51 and the first electrode 411 as well as the electrostatic release capacitor formed by the capacitor plate 21 and the first electrode lead 51, further avoiding static electricity damage to the light-emitting unit 41 and the first electrode lead 51.

[0057] On the basis of the above embodiment, optionally, the thickness of the capacitor insulating layer 30 is greater than or equal to 1nm and less than or equal to 1000nm; preferably, the thickness of the capacitor insulating layer 30 is greater than or equal to 5nm and less than or equal to 150nm. Exemplarily, the thickness of the capacitor insulating layer 30 can be 1nm, 5nm, 8nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 500nm, 800nm ​​or 1000nm.

[0058] Specifically, the smaller the thickness of the capacitor insulating layer 30 is, the larger the electrostatic release capacitance between the capacitor plate 51 and the first electrode 411 and the first electrode lead 51 is, and the larger the static electricity that the electrostatic release capacitance can withstand is, further avoiding static electricity damage to the light-emitting unit 41 and the first electrode lead 51.

[0059] On the basis of the above embodiment, optionally, the capacitor plate layer 20 is not connected to a potential, or the capacitor plate layer 20 is electrically connected to the second electrode 413 .

[0060] Specifically, the capacitor plate layer 20 may not be connected to a potential. Figure 3 is a schematic diagram of an equivalent capacitance of a light emitting device provided by an embodiment of the present invention, with reference to Figure 3 , the equivalent capacitance of each light emitting unit 41 is C seg The electrostatic discharge capacitance formed between the capacitor plate 21 and a first electrode 411 is C coup, assuming that one capacitor plate 21 corresponds to n+1 light-emitting units 41, when static electricity acts on the first electrode 411 of the first light-emitting unit 41 among the n+1 light-emitting units 41, the equivalent capacitance C of the n+1 light-emitting unit 41 and the n+1 electrostatic discharge capacitor T for:

[0061]

[0062] Each of the second to n+1 th light emitting units 41 and its corresponding electrostatic discharge capacitor are connected in series to obtain n series capacitors. After the n series capacitors are connected in parallel, they are connected to the electrostatic discharge capacitor C of the first light emitting unit 41. coup Connect them in series to get the total series-parallel capacitance, i.e. C coup,seg The equivalent capacitance C of n+1 light-emitting units 41 and n+1 electrostatic discharge capacitors T is the total series-parallel capacitance C coup,seg The equivalent capacitance C of the first light emitting unit 41 seg Capacitors connected in parallel.

[0063] It can be seen from the above formula that by setting the capacitor plate 21 not to be connected to a potential, when static electricity acts on the light-emitting unit 41, multiple electrostatic release capacitors and multiple light-emitting units 41 jointly bear the static electricity, and the capacitor that bears the static electricity is larger, so that the light-emitting unit 41 is not easily damaged by static electricity.

[0064] Continue to refer Figure 3 When the capacitor plate 21 is electrically connected to the second electrode 413, the capacitor plate 21 and the second electrode 413 are at the same potential. When static electricity acts on the first electrode 411 of a light-emitting unit 41, the static discharge capacitor corresponding to the light-emitting unit 41 and the equivalent capacitor of the light-emitting unit 41 are connected in parallel, and the total capacitance subjected to static electricity is C seg +C coup , the capacitance that withstands static electricity is larger, so that the light emitting unit 41 is not easily damaged by static electricity.

[0065] Based on the above embodiment, optionally, continue to refer to Figure 1 and Figure 2 The wiring layer further includes a lapped conductive block 52, the second electrode 413 is in contact and electrically connected with the lapped conductive block 52, and the lapped conductive block 52 is used to transmit a set electrical signal to the second electrode 413;

[0066] The capacitor plate layer 20 is electrically connected to the overlapping conductive block 52 .

[0067] Specifically, the overlapping conductive block 52 is arranged in the non-luminous area. Exemplarily, the overlapping conductive block 52 is arranged on one side of the area where the multiple light-emitting units 41 are located, and the edge area of ​​the second electrode 413 is in contact with the overlapping conductive block 52. The overlapping conductive block 52 is electrically connected to the external pin, and can receive the set electrical signal transmitted by the external pin, and transmit the set electrical signal to the second electrode 413. When the second electrode 41 receives the set electrical signal and the first electrode 411 receives the light-emitting drive signal, the light-emitting unit 41 emits light. The capacitor plate layer 20 can be electrically connected to the overlapping conductive block 52 through a through hole to achieve electrical connection between the capacitor plate layer 20 and the second electrode 413. By setting the capacitor plate layer 20 to be electrically connected to the overlapping conductive block 52, the difficulty of the connection process can be reduced.

[0068] On the basis of the above embodiment, optionally, the vertical projection of the capacitor plate 21 on the light emitting structure layer 40 covers m light emitting units 41, C coup / C seg =K, m≥10*K; where C coup is the capacitance value between the capacitor plate 21 and the first electrode 411 of the light emitting unit 41, C seg is the equivalent capacitance value of a light-emitting unit, K is a positive number, and m is a positive integer.

[0069] Specifically, when the capacitor plate 21 is not connected to a potential, when static electricity acts on the first electrode 411 of one of the m light-emitting units 41, the equivalent capacitance C of the m light-emitting units 41 and the m electrostatic discharge capacitors T1 for: From the formula, we can see that the larger the m value, the higher the C T1 The inventors found through research that when m≥10*K, C T1 The electrostatic protection requirements of the light-emitting device can be met, and the light-emitting unit 41 and the first electrode lead 51 can be prevented from being damaged by static electricity to the greatest extent.

[0070] On the basis of the above embodiment, optionally, the routing layer further includes a first external pin 53 and a second external pin 54;

[0071] The first electrode lead 51 is electrically connected to the first external pin 53;

[0072] The bridging conductive block 52 is electrically connected to the second external pin 54 .

[0073] Specifically, the first external pin 53 and the second external pin 54 are used to bind an external circuit, and the external circuit is used to transmit a driving signal to the light-emitting device. Exemplarily, the external circuit transmits a light-emitting driving signal to the first external pin 53, and the light-emitting driving signal is transmitted to the first electrode 411 via the first external pin 53. The external circuit transmits a set electrical signal (which can be a fixed voltage signal) to the second external pin 54, and the second external pin 54 transmits the set electrical signal to the second electrode 413 via the overlapping conductive block 52. The first electrode 411 and the second electrical signal 413 receive the signal receiving and emitting unit 41 to emit light.

[0074] Based on the above embodiment, optionally, the first electrode 411 is a light-transmitting electrode, the second electrode 413 is a reflective electrode, and the capacitor plate layer 20 is made of a light-transmitting conductive material; or, the first electrode 411 is a reflective electrode, the second electrode 413 is a light-transmitting electrode, and the capacitor plate layer 20 is made of a conductive material.

[0075] Specifically, when the first electrode 411 is a light-transmitting electrode, the light emitted by the light-emitting unit 41 is emitted through the capacitor plate layer 20, and the capacitor plate layer 20 can be made of a light-transmitting conductive material with high conductivity such as ITO. When the second electrode 413 is a light-transmitting electrode, the light emitted by the light-emitting unit 41 is emitted from the second electrode 413, and the capacitor plate layer 20 can be made of any conductive material with high conductivity.

[0076] On the basis of the above embodiment, optionally, the second electrodes 413 of all the light-emitting units 41 are electrically connected to each other to form a whole electrode;

[0077] The first electrode lead 51 is disposed on at least one side of the area where all the light emitting units 41 are located, and the second electrode 413 includes at least one second edge 62 .

[0078] Specifically, refer to Figure 1 Part of the first electrode lead 51 is arranged on the left side of the area where all the light-emitting units 41 are located, and part of the first electrode lead 51 is arranged on the right side of the area where all the light-emitting units 41 are located. The first electrode lead 51 extends from the left side or the right side of the area where all the light-emitting units 41 are located to the first external pin 53. The second edge 62 of the second electrode 413 includes the edges on the left and right sides of the first electrode 413, and the edge of the second electrode 413 adjacent to the first external pin 53.

[0079] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0080] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A light emitting device, characterized in that: include: A substrate, a capacitor plate layer disposed on one side of the substrate, a capacitor insulating layer disposed on a side of the capacitor plate layer away from the substrate, a wiring layer disposed on a side of the capacitor insulating layer away from the capacitor plate layer, and a light emitting structure layer disposed on a side of the wiring layer away from the capacitor insulating layer; The capacitor plate layer includes at least one capacitor plate, each of the capacitor plates corresponds to at least one light-emitting unit, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the corresponding light-emitting unit; The light emitting structure layer comprises a plurality of light emitting units, each of the light emitting units comprises a first electrode, a light emitting layer and a second electrode which are stacked, and the second electrode is arranged on a side of the light emitting layer away from the substrate; The first electrode includes a first edge, the second electrode includes a second edge, and the vertical projection of the capacitor plate on the light-emitting structure layer covers the first edge and the second edge; the vertical projection of the capacitor plate on the light-emitting structure layer includes a third edge, the third edge is adjacent to the second edge, and the distance between the third edge and the first edge and the second edge is greater than 0.

2. The light emitting device according to claim 1, characterized in that: The vertical projection of the capacitor plate on the light emitting structure layer covers the first edge and the second edge, and covers at least a portion of the vertical projection of the preset lead segment on the light emitting structure layer; The routing layer includes a plurality of first electrode leads, the first electrodes are electrically connected to the first electrode leads, and different first electrodes are connected to different first electrode leads; The second edge is arranged adjacent to a preset lead segment of the first electrode lead; wherein a vertical projection of the preset lead segment on the substrate is located outside a vertical projection of the second electrode on the substrate.

3. The light emitting device according to claim 1, characterized in that: The square resistance of the capacitor plate is greater than or equal to 0.1Ω / □ and less than or equal to 1000Ω / □.

4. The light emitting device according to claim 1, characterized in that: The thickness of the capacitor insulating layer is greater than or equal to 1 nm and less than or equal to 1000 nm.

5. The light emitting device according to claim 1, characterized in that: The capacitor plate layer is not connected to a potential, or the capacitor plate layer is electrically connected to the second electrode.

6. The light emitting device according to claim 5, characterized in that: The routing layer further includes a lapped conductive block, the second electrode is in contact and electrically connected with the lapped conductive block, and the lapped conductive block is used to transmit a set electrical signal to the second electrode; The capacitor plate layer is electrically connected to the overlapping conductive block.

7. The light emitting device according to claim 1, characterized in that: The vertical projection of the capacitor plate on the light-emitting structure layer covers m light-emitting units, C coup / C seg =K, m≥10*K; Among them, C coup is the capacitance between the capacitor plate and the first electrode of a light-emitting unit, C seg is the equivalent capacitance value of a light-emitting unit, K is a positive number, and m is a positive integer.

8. The light emitting device according to claim 6, characterized in that: The routing layer also includes a first external pin and a second external pin; The first electrode lead is electrically connected to the first external pin; The overlapping conductive block is electrically connected to the second external pin.

9. The light emitting device according to claim 1, characterized in that: The first electrode is a light-transmitting electrode, the second electrode is a reflective electrode, and the capacitor plate layer is made of a light-transmitting conductive material; or, the first electrode is a reflective electrode, the second electrode is a light-transmitting electrode, and the capacitor plate layer is made of a conductive material.

10. The light emitting device according to claim 1, characterized in that: The second electrodes of all the light-emitting units are electrically connected to each other to form a whole electrode; The first electrode lead is arranged on at least one side of the area where all the light emitting units are located, and the second electrode includes at least one second edge.