Perovskite battery laser processing heat affected zone control method and device

Abstract

The present invention provides a method and device for controlling the heat-affected zone of a perovskite battery laser processing, the method comprising: performing multi-source data collection and calibration processing on the perovskite battery stack structure to obtain a calibration data set including temperature distribution, surface morphology and electrical characteristics; based on the calibration data set, comprehensively analyzing the area where ion thermosensitive reactions are generated to obtain the risk zoning result of the heat-affected zone; based on the risk distribution result of the heat-affected zone, differentially configuring the energy output and movement path of the laser etching to obtain a control instruction set for local etching; according to the control instruction set, executing the laser etching process to obtain an etching control scheme for managing the heat-affected zone. The method monitors and identifies heat-sensitive areas in real time based on the collection and analysis of multi-source data, controls the temperature distribution and local thermal stress during laser processing, reduces thermal damage by accurately adjusting the laser power and scanning path, and improves the long-term stability of the perovskite battery.

Description

Technical Field

[0001] The present invention relates to the field of processing control technology, and in particular to a method and device for controlling a heat-affected zone in laser processing of a perovskite cell. Background Art

[0002] Perovskite cells have become a research hotspot in the field of solar photovoltaics in recent years due to their excellent photoelectric conversion efficiency and low-cost potential. Compared with traditional silicon-based solar cells, perovskite cells not only excel in efficiency, but also have good scalability and low production costs. However, in the production process of perovskite cells, laser processing technology is widely used in processes such as cell graphics, etching and film removal to achieve finer structures and higher cell performance.

[0003] During laser processing, due to the concentrated effect of laser energy, the surface of the material will be in an instantaneous high temperature state, resulting in the formation of a heat-affected zone. The heat-affected zone refers to the area outside the laser irradiation area where the physical or chemical properties change due to the thermal effect. In the laser processing of perovskite cells, the existence of the heat-affected zone may cause a series of adverse consequences, such as thermal damage to the material, ion migration, interface layer failure, etc., and even lead to degradation of battery performance in severe cases. In particular, perovskite materials have high thermal sensitivity, and slight changes in their structure (such as lattice dislocation or ion migration) will significantly affect the photoelectric conversion efficiency and stability of the battery.

[0004] Existing laser processing methods for perovskite cells usually rely on empirically set process parameters, such as laser power, pulse width, and scanning speed. However, due to the non-uniformity and thermal sensitivity of perovskite cell materials, this traditional laser processing method is difficult to accurately predict and control the scope and extent of the heat-affected zone, which in turn affects the processing accuracy and the final performance of the cell. Current methods often fail to effectively consider the differences in thermal effects in different regions, and lack accurate identification and dynamic adjustment of heat-sensitive areas. Summary of the invention

[0005] The main purpose of the present invention is to solve the technical problems of inaccurate control, difficulty in prediction and optimization of the heat affected zone in the existing perovskite battery laser processing process;

[0006] A first aspect of the present invention provides a method for controlling a heat-affected zone of a perovskite cell during laser processing, the method comprising:

[0007] Perform multi-source data acquisition and calibration processing on the stacked structure of perovskite cells to obtain a calibration data set containing temperature distribution information, surface morphology parameters, and local electrical characteristics;

[0008] Based on the calibration data set, a comprehensive analysis is performed on the area where ion thermosensitive reaction occurs in the perovskite battery to obtain a risk zoning result of the heat-affected zone;

[0009] According to the risk distribution result of the heat-affected zone, energy output and movement path of laser etching are differentially configured to obtain a control instruction set for local etching;

[0010] According to the control instruction set, the laser etching process of the perovskite cell is processed by executing the etching strategy within the target range to obtain an etching control scheme for managing the heat affected zone.

[0011] Optionally, in a first implementation of the first aspect of the present invention, the multi-source data acquisition and calibration processing of the stacked structure of the perovskite battery to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics includes:

[0012] The temperature detection signal on the stacked structure of the perovskite battery is sensed, received and processed to obtain the temperature distribution information of the recorded temperature time series and distribution area;

[0013] According to the temperature distribution information, the reflected optical information of the surface of the perovskite cell is subjected to fixed-point comparison processing to obtain surface morphology parameters indicating film thickness uniformity and defect distribution;

[0014] According to the surface morphology parameters, a local electrical measurement signal collected from the back electrode port of the perovskite cell is synchronously calibrated to obtain a local electrical characteristic including local conductivity and contact resistance characteristics;

[0015] The temperature distribution information, electrical correlation data and the surface morphology parameters are matched and merged to obtain a corresponding calibration data set.

[0016] Optionally, in a second implementation of the first aspect of the present invention, the region where the ion thermosensitive reaction occurs in the perovskite battery is comprehensively analyzed and processed according to the calibration data set to obtain a risk zoning result of the heat-affected zone, including:

[0017] According to the temperature distribution information in the calibration data set, the areas with temperature gradient greater than a threshold are screened in sections to obtain a list of suspected hot spots;

[0018] According to the list of suspected hot spots, a difference comparison process is performed on the electrical correlation data in the corresponding area to obtain the distribution of hot spots with signs of ion migration;

[0019] According to the distribution of hot spots, the topographical reference data is locally superimposed to obtain a heat-affected zone risk zoning result that comprehensively reflects the coupling effect of thermal stress and defect distribution.

[0020] Optionally, in a third implementation of the first aspect of the present invention, performing a difference comparison process on the electrical correlation data in the corresponding area according to the list of suspected hot spots to obtain a distribution of hot spot areas with signs of ion migration includes:

[0021] Performing multi-segment index extraction processing on the coordinate information of the suspected hot spot list to obtain a coordinate index set corresponding to the suspected hot spot;

[0022] According to the coordinate index set, the electrical measurement data is subjected to time alignment processing to obtain an electrical waveform segment corresponding to each suspected hot spot;

[0023] Performing multi-dimensional difference screening processing on the electrical waveform segments to obtain candidate abnormal conductivity intervals;

[0024] According to the candidate abnormal conductivity interval, the bias current distribution of the hot spot area is subjected to threshold segmentation processing to obtain the hot spot area distribution with signs of ion migration.

[0025] Optionally, in a fourth implementation of the first aspect of the present invention, the energy output and movement path of laser etching are differentially configured according to the risk distribution result of the heat affected zone to obtain a control instruction set for local etching, which includes:

[0026] Performing laser power preset processing on different partition level information in the risk distribution result of the heat affected zone to obtain corresponding energy output thresholds;

[0027] According to the energy output threshold, multi-level scheduling processing is performed on the start and end coordinates of the laser scanning path and the pulse interval to obtain a differentiated etching strategy configuration;

[0028] The differentiated etching strategy configuration is subjected to parameter assembly processing to obtain a control instruction set for local etching.

[0029] Optionally, in a fifth implementation of the first aspect of the present invention, performing multi-level scheduling processing on the start and end coordinates of the laser scanning path and the pulse interval according to the energy output threshold to obtain a differentiated etching strategy configuration includes:

[0030] Performing segmentation processing on the energy output threshold to obtain a threshold sequence for etching energy grading;

[0031] According to the threshold sequence, matching and indexing processing is performed on the start and end coordinates of the laser scanning path to obtain a coordinate mapping relationship corresponding to each partition threshold;

[0032] Performing pulse interval evaluation processing on the coordinate mapping relationship to obtain scanning time configurations under different graded laser powers;

[0033] According to the scanning time configuration, the stepping speed and pulse interval of the laser scanning are hierarchically merged to obtain a multi-level scheduling matrix;

[0034] The multi-level scheduling matrix is ​​subjected to regional assembly processing to obtain a differentiated etching strategy configuration.

[0035] Optionally, in a sixth implementation of the first aspect of the present invention, the etching strategy execution processing within the target range is performed on the laser etching process of the perovskite battery according to the control instruction set to obtain an etching control scheme for managing the heat affected zone, including:

[0036] Performing sequential scheduling processing on the energy output threshold and the differentiated etching strategy configuration included in the control instruction set to obtain an etching start configuration;

[0037] According to the etching start configuration, a segmented pulse output process is performed on the heat-affected zone pre-marked by the perovskite battery to obtain an information feedback set containing local feature changes after etching;

[0038] According to the information feedback set, the positioning path parameters in the laser etching area are subjected to amplitude limiting matching processing to obtain an etching control scheme for managing the heat affected zone.

[0039] A second aspect of the present invention provides a device for controlling a heat-affected zone of a perovskite cell laser processing, the device comprising:

[0040] The multi-source data acquisition module is used to collect and calibrate the multi-source data of the stacked structure of the perovskite battery to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics;

[0041] A risk analysis module, used to perform comprehensive analysis and processing on the area where ion thermosensitive reaction occurs in the perovskite battery according to the calibration data set, and obtain the risk zoning result of the heat-affected zone;

[0042] An etching configuration module, used to perform differentiated configuration processing on the energy output and movement path of laser etching according to the risk distribution result of the heat-affected zone, so as to obtain a control instruction set for local etching;

[0043] The etching execution module is used to execute the etching strategy within the target range of the laser etching process of the perovskite battery according to the control instruction set, so as to obtain an etching control scheme for managing the heat affected zone.

[0044] The above-mentioned method and device for controlling the heat-affected zone of laser processing of perovskite cells acquires a calibration data set including temperature distribution, surface morphology and electrical characteristics by performing multi-source data collection and calibration processing on the stacked structure of the perovskite cell; based on the calibration data set, a comprehensive analysis is performed on the area where ion thermosensitive reactions occur to obtain the risk zoning results of the heat-affected zone; based on the risk distribution results of the heat-affected zone, the energy output and movement path of the laser etching are differentially configured to obtain a control instruction set for local etching; according to the control instruction set, the laser etching process is executed to obtain an etching control scheme for managing the heat-affected zone. This method monitors and identifies heat-sensitive areas in real time based on the collection and analysis of multi-source data, controls the temperature distribution and local thermal stress during laser processing, and reduces thermal damage by accurately adjusting the laser power and scanning path, thereby improving the long-term stability of the perovskite cell.

[0045] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 This is a schematic diagram of a first embodiment of a method for controlling a heat-affected zone of a perovskite cell laser processing according to an embodiment of the present invention;

[0048] Figure 2 Schematic diagram of an embodiment of a device for controlling the heat affected zone of a perovskite cell laser processing in an embodiment of the present invention. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] The terms "including" and "having" and any variations thereof mentioned in the embodiments of the present invention are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product or device end including a series of steps or units is not limited to the listed steps or units, but may optionally include other steps or units that are not listed, or may optionally include other steps or units that are inherent to these processes, methods, products or device ends.

[0051] To facilitate understanding of this embodiment, a method for controlling the heat-affected zone of a perovskite cell laser processing disclosed in an embodiment of the present invention is first introduced in detail. Figure 1 As shown, the method comprises the following steps:

[0052] 101. Perform multi-source data collection and calibration processing on the stacked structure of the perovskite battery to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics;

[0053] In one embodiment of the present invention, the multi-source data collection and calibration processing of the stacked structure of the perovskite battery to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics includes: sensing and receiving the temperature detection signal on the stacked structure of the perovskite battery to obtain temperature distribution information recording the temperature timing and distribution area; based on the temperature distribution information, performing fixed-point comparison processing on the reflected optical information on the surface of the perovskite battery to obtain surface morphology parameters for identifying film thickness uniformity and defect distribution; based on the surface morphology parameters, synchronously calibrating the local electrical measurement signal collected at the back electrode port of the perovskite battery to obtain local electrical characteristics including local conductivity and contact resistance characteristics; matching and merging the temperature distribution information, electrical correlation data and the surface morphology parameters to obtain the corresponding calibration data set.

[0054] Specifically, the temperature of the laminated structure of the perovskite battery is detected. This process is usually completed by using infrared thermal imagers, thermocouple sensors or optical fiber temperature sensors. Infrared thermal imagers can provide instant images of surface temperature and have high spatiotemporal resolution, which is suitable for monitoring changes in surface temperature under laser irradiation. Through thermal imaging technology, the temperature time series data of the perovskite battery during laser processing can be obtained in real time, and the temperature distribution at different positions can be identified. For different functional layers in the battery (such as perovskite absorption layer, electron transport layer, etc.), different sensors can be placed in different areas of the laminated structure for synchronous detection to further obtain temperature distribution information in different areas. By monitoring these temperature data in multiple time periods, the local temperature distribution at each moment can be obtained, and the temperature changes in specific areas can be obtained by combining the temperature distribution image, and it can be determined which areas are heated more and which areas are in a lower temperature zone, thereby providing support for subsequent heat-affected zone analysis and thermal control strategies. The technical effect of this step is to be able to accurately track the spatial and temporal changes of temperature during laser processing in real time, and reveal the formation process of the heat-affected zone.

[0055] Specifically, the surface morphology of the battery is analyzed in combination with the temperature distribution information. Through reflective optical technology, such as confocal microscopy or surface profiler, high-precision measurement of the thickness and morphology of the battery surface film layer can be achieved. Optical reflection technology irradiates the laser beam to the battery surface, obtains the intensity and angle information of the reflected light, and further infers the thickness and optical property changes of the surface film layer. When using this technology, through fixed-point comparison processing, the temperature distribution data can be combined to accurately analyze the film thickness non-uniformity, surface roughness and possible defects (such as cracks, bubbles, etc.). If the temperature detection shows that certain areas are heated more, it may affect the uniformity of the film layer in the area, or cause local damage to the material. At this time, reflective optical technology can help identify the film thickness changes in these areas and reflect the morphological defects caused by laser heating. By comparing the reflective optical information at multiple detection points, the uniformity and defect distribution of the surface morphology can be fully understood, and detailed morphological parameters can be obtained. This can not only help analyze the surface changes after laser irradiation, but also be combined with temperature distribution data to further improve the positioning accuracy of the heat-affected zone.

[0056] Specifically, electrical measurements are used to capture local electrical characteristics during laser processing. Electrical measurements are usually performed using a microammeter, nanoconductivity meter, or four-probe method, which can accurately measure local conductivity changes and contact resistance characteristics at the back electrode port of the battery. When the temperature in the laser irradiation area rises, it may cause electrical changes such as ion migration and interface mismatch inside the battery. By performing electrical measurements at the back electrode port and calibrating the surface morphology parameters simultaneously, the conductivity changes and contact resistance fluctuations caused by thermal stress can be accurately captured. Specifically, conductivity measurements can reflect whether there is an interruption or attenuation of the charge transfer channel in the heat-affected zone, while changes in contact resistance reveal the contact quality between the electrode and the functional layer. By synchronously comparing electrical data with surface morphology data, the changing trend of electrical properties in the heat-affected zone can be analyzed, and potential problem areas of the battery during laser processing can be identified. The technical effect of this step is to provide a measurement method that is directly associated with the electrical properties of the material, so that the electrical characteristics of the heat-affected zone can be accurately grasped.

[0057] Specifically, the temperature distribution information, surface morphology parameters and electrical characteristic data are comprehensively processed to obtain a calibration data set. In this step, the data collected by different sensors must first be synchronously paired to ensure the temporal and spatial consistency of the temperature, morphology and electrical characteristic data. Different data sets can be mapped spatially and temporally by interpolation methods to ensure that they correspond to the temperature, morphology and electrical characteristic data at the same time under the same spatial coordinates. Then, multidimensional data fusion technology, such as principal component analysis (PCA) or regression analysis methods, is used to jointly analyze the temperature distribution, morphology parameters and electrical data to extract the key factors affecting the quality of laser processing. Ultimately, the obtained calibration data set can not only describe the thermal distribution and surface morphology during laser processing, but also quantify the changes in electrical properties in different regions. This calibration data set will serve as the basis for subsequent heat-affected zone risk analysis and control strategy setting, helping to accurately evaluate the impact of laser processing on the performance of perovskite cells.

[0058] 102. Perform comprehensive analysis and processing on the area where ion thermosensitive reaction occurs in the perovskite battery according to the calibration data set to obtain risk zoning results of the heat-affected zone;

[0059] In one embodiment of the present invention, the area where ion thermosensitive reaction occurs in the perovskite battery is comprehensively analyzed and processed according to the calibration data set to obtain the risk zoning result of the heat affected zone, including: according to the temperature distribution information in the calibration data set, the area where the temperature gradient is greater than the threshold is segmented and screened to obtain a list of suspected hot spots; according to the list of suspected hot spots, the electrical correlation data in the corresponding area is subjected to difference comparison processing to obtain the distribution of hot spot areas with signs of ion migration; according to the distribution of hot spot areas, the morphology reference data is locally superimposed to obtain the risk zoning result of the heat affected zone that comprehensively reflects the coupling effect of thermal stress and defect distribution.

[0060] Specifically, the temperature distribution information in the calibration data set needs to be analyzed and processed first. Specifically, the temperature distribution data is obtained by a thermal imager or other temperature sensor under laser irradiation, reflecting the temperature changes in various regions of the perovskite battery after laser irradiation. By performing gradient calculation on these temperature data, the temperature gradient value of each region can be obtained. The temperature gradient refers to the rate of temperature change, which is usually calculated as the ratio of the temperature change to the distance of the region in adjacent regions. According to this calculation result, it is possible to clearly identify which regions have a large temperature gradient, and these regions are usually the most concentrated areas of heat, that is, the areas where thermal stress, ion migration and other heat-affected reactions may occur. Next, the areas with a temperature gradient greater than a preset threshold are screened. The setting of the threshold is usually determined based on the thermal sensitivity of the material and the typical temperature distribution characteristics during laser processing. For example, when the temperature of the perovskite material is higher than a certain critical value, its structure may undergo physical or chemical changes, so a threshold is set to screen out areas with drastic temperature changes, which may become hot spots. Through segmented screening processing, a list of hot spot areas is obtained, and these areas are the focus of subsequent further analysis.

[0061] Specifically, according to the list of suspected hot spots obtained in the first step, the analysis of electrical related data is continued. At this time, it is necessary to use electrical measurement tools, such as conductivity meters, four-probe methods or resistance measuring instruments, to collect electrical data in the same area, especially conductivity and contact resistance data. These data can reveal the changes in charge transfer channels caused by thermal stress, especially in areas with large temperature gradients, where conductivity may decrease and contact resistance may increase, indicating changes in ion migration or charge transfer capacity. For the identified hot spot areas, by comparing the electrical data in these areas with the electrical data in normal areas, the areas with abnormal changes in electrical properties can be effectively identified. Specifically, by comparing the conductivity data and contact resistance data of different areas, it can be confirmed which areas have undergone significant changes in electrical characteristics, usually manifested as a trend of decreased conductivity or increased contact resistance. Abnormal changes in electrical data are often closely related to factors such as ion migration, thermal diffusion or interface reactions. Therefore, these areas can be marked as hot spots with signs of ion migration.

[0062] Specifically, the distribution of hot spots with signs of ion migration obtained in the above steps is further combined with the surface morphology parameters. The morphology parameters are usually obtained by reflective optical measurement technology (such as confocal microscopy or white light interferometry), which can reflect the uniformity and roughness of the surface film layer and whether there are cracks, bubbles or other surface defects. By superimposing these surface morphology parameters with the hot spots of the above electrical analysis, the interaction and coupling relationship between thermal stress and defect distribution can be revealed. Specifically, in these high-temperature hot spots, the physical morphology of the film layer may change due to the action of thermal stress, and defects such as cracks, film peeling or bubbles may appear on the surface. These morphological changes are often highly correlated with local changes in electrical properties. Therefore, by locally superimposing the morphological data and electrical data, a comprehensive heat-affected zone risk zoning result can be formed. Through this coupled analysis, it is possible to more accurately predict which areas of thermal stress will cause battery performance to deteriorate or shorten life, thereby forming the final heat-affected zone risk zoning map.

[0063] Furthermore, according to the suspected hot spot list, the electrical related data in the corresponding area are subjected to difference comparison processing to obtain the hot spot area distribution with signs of ion migration, including: performing multi-segment index extraction processing on the coordinate information of the suspected hot spot list to obtain a coordinate index set corresponding to the suspected hot spot; according to the coordinate index set, performing time alignment processing on the electrical measurement data to obtain an electrical waveform segment corresponding to each suspected hot spot; performing multi-dimensional difference screening processing on the electrical waveform segment to obtain candidate abnormal conductivity intervals; according to the candidate abnormal conductivity intervals, performing threshold segmentation processing on the bias current distribution of the hot spot area to obtain the hot spot area distribution with signs of ion migration.

[0064] Specifically, the multi-segment index extraction process requires first obtaining a list of suspected hot spots identified in thermal imaging or other temperature monitoring links, and then constructing a coordinate index set corresponding to each hot spot location by performing multi-segment index extraction on the spatial coordinates of these hot spot areas. Thermal imagers usually output a temperature distribution matrix containing a two-dimensional or three-dimensional pixel matrix, and each matrix element carries a temperature value and a spatial coordinate label. When the entire matrix is ​​scanned row by row or block by block, it will be found that the temperature or temperature gradient of some areas is much higher than that of other areas. Such areas are marked as suspected hot spots. In order to more accurately lock these hot spots, it is necessary to separate the coordinates of these high-temperature points from the original matrix using a multi-segment index method to form an index list for subsequent analysis. The multi-segment indexing method here can be understood as a search for those points that meet the requirements in the entire temperature matrix. The points (or those satisfying more complex threshold functions) are scanned and aggregated several times. The temperature threshold is set in advance according to the characteristics of the perovskite material. During the scanning process, the coordinates of each pixel point that meets the conditions will be recorded. , and aggregate adjacent coordinates in blocks to extract continuous areas from a large number of scattered hotspot pixels. The following formula gives a simple spatial aggregation determination method:

[0065] , The same suspected hot spot;

[0066] in Represents pixel and The Euclidean distance between is the pre-set clustering radius. If this distance is less than , then they are considered to belong to the same hot spot area. By combining this formula with the spatial aggregation algorithm, adjacent or connected high-temperature points can be merged in the coordinate plane, and a unique index can be assigned to each hot spot area after merging. In this way, each hot spot area can be clearly marked as , where the subscript k represents the corresponding This completes the process of multi-segment index extraction of the coordinate information of the list of suspected hot spots. The resulting coordinate index set will be matched with the electrical data in subsequent steps, thus entering a more in-depth heat affected zone analysis stage.

[0067] When performing timing alignment on electrical measurement data, it is necessary to match each hot spot area with the electrical information collected based on the coordinates of the above-mentioned suspected hot spot list. Electrical measurements during laser processing often obtain data sequences of current, voltage or resistance in different time periods. These data have independent timestamps and sampling frequencies, which are inconsistent with the timestamps of temperature monitoring data. In order to ensure that the electrical data can be correctly associated with the hot spot coordinate information in space, the timestamps need to be matched or interpolated so that the electrical data and temperature data at the same time and spatial position are aligned. Timing alignment can be accomplished by constructing a linear or nonlinear interpolation function. Assuming that the sampling time of the electrical data is known to be , the temperature data sampling time is , can be satisfied Under the condition of selecting the closest time point for mapping, you can also use piecewise linear interpolation to construct a mapping function ,make And estimate other moments. This ensures that At the hot spot position, the electrical data sampling point corresponding to the position is matched through the coordinate index set, and synchronized or approximately synchronized on the time axis. Once the timing and coordinates are mapped, the electrical waveform fragments corresponding to each suspected hot spot can be obtained. These waveform fragments are composed of the sequence or conductivity The processing method provides a prerequisite for the subsequent identification of ion migration signs, fully displays the electrical signal characteristics of the hot spot area, and is also convenient for the subsequent difference comparison and abnormal screening steps.

[0068] When performing multi-dimensional difference screening on the electrical waveform segments, it is necessary to find those change intervals that significantly deviate from the normal distribution in the aligned electrical waveform segments to determine whether there is potential ion migration and electrical abnormal behavior. This process involves multi-dimensional analysis of waveform data, usually including time domain analysis and frequency domain analysis, and performing difference comparison on data distribution in feature space. In the time domain, the electrical waveform can be segmented according to a given window length, and the statistics such as the mean, variance and skewness of each segment can be calculated. If the preset threshold is exceeded, the window is marked as abnormal. In the frequency domain, continuous wavelet transform can be used. Analyze the waveform and record it as , then the wavelet transform can be expressed as

[0069] ;

[0070] in represents the scale factor, represents the translation factor, is the mother wavelet function. By selecting the appropriate wavelet basis function, information such as local mutations, spikes or high-frequency noise can be extracted at different scales and time positions, and compared with the normal waveform features by difference. If the wavelet coefficients in a certain scale or frequency band are found to be far beyond the normal level in a specific time period, the time period is regarded as a candidate abnormal interval. These abnormal intervals can also be clustered in the feature space. If the abnormal distribution forms a continuous interval on the time axis, it can be regarded as a candidate abnormal conductivity interval. These intervals often correspond to abnormal signals caused by conductivity mutations or other interface reactions caused by local ion diffusion in perovskite materials. This process combines the time domain and the frequency domain to perform difference screening on the multi-dimensional features of the electrical waveform fragments, thereby obtaining a more refined distribution of abnormal intervals, which is helpful for a more targeted evaluation of the signs of ion migration in subsequent steps.

[0071] When performing threshold segmentation processing on the bias current distribution in the hot spot area, it is necessary to analyze the specific change form of the bias current over time or with the spatial coordinates within the locked candidate abnormal interval to determine whether it conforms to the characteristic mode of ion migration. The bias current is usually composed of the current value measured under specific bias conditions. For perovskite materials, this current often shows a steep increase or attenuation characteristic with temperature or stress enhancement. In order to perform threshold segmentation processing, it is necessary to first determine a current threshold function , which can be a spatial position and time If the measured bias current is within the candidate abnormal conductance interval, Greater than , then the area is judged to have a higher risk of ion migration. The threshold function can be set according to multiple factors, such as the baseline current distribution at room temperature and pressure of the same type of battery, and can also be corrected in combination with the known ion diffusion model. When the current value in the time dimension and the space dimension are compared point by point with the threshold function, it can be determined which sub-intervals show obvious excess in the bias current, and these sub-intervals are aggregated and marked as hot spot area distribution with ion migration sha. At the output result level, this distribution is often presented in the form of a coordinate graph or a three-dimensional image, which can indicate where and when excessive current changes occur, thereby indicating that the area is prone to ion thermal sensitivity or material loss. The above processing method not only integrates a series of steps such as timing alignment, electrical anomaly detection and threshold segmentation, but also combines the results of multi-dimensional difference screening to generate an ion migration sign area with a high confidence level. In this way, the severity of the heat-affected zone can be more clearly identified in the spatial and temporal dimensions, helping to determine the priority focus of subsequent laser processing or material modification.

[0072] 103. According to the risk distribution result of the heat-affected zone, differentially configure the energy output and the movement path of the laser etching to obtain a control instruction set for local etching;

[0073] In one embodiment of the present invention, the energy output and movement path of laser etching are differentially configured based on the risk distribution result of the heat affected zone to obtain a control instruction set for local etching, including: laser power preset processing of different partition level information in the risk distribution result of the heat affected zone to obtain a corresponding energy output threshold; based on the energy output threshold, multi-level scheduling processing of the start and end coordinates of the laser scanning path and the pulse interval to obtain a differentiated etching strategy configuration; parameter assembly processing of the differentiated etching strategy configuration to obtain a control instruction set for local etching.

[0074] Specifically, after analyzing the risk distribution results of the heat-affected zone, it is necessary to perform laser power preset processing according to the information of different partition levels to obtain the corresponding energy output threshold. At this time, a mapping relationship can be established between the risk partition and the power level, so that the high-risk area can be mapped to a lower power output, and the safe area can be mapped to a higher power range, so as to take into account both material safety and etching efficiency. In specific operations, a power upper and lower limit can be determined for each partition level in combination with existing experimental data or the heat resistance of perovskite materials. When the laser beam enters a certain partition, the scanning system can automatically adjust the laser power to the corresponding range. To establish this type of power preset, it is necessary to define a parameter table or function curve in the control software so that the laser output can match the partition level at any time. In this way, more moderate energy can be applied to areas prone to ion migration or thermal damage in subsequent etching to ensure sufficient heat dissipation margin, while maintaining a higher power in the stable area to improve etching efficiency.

[0075] After obtaining the energy output threshold, the start and end coordinates of the laser scanning path and the pulse interval need to be multi-level scheduled to obtain differentiated etching strategy configuration. At this time, the boundary coordinates and risk level information of each heat-affected zone can be loaded into the scanning control system, so that the system can automatically detect whether the current position crosses to a new risk partition when performing laser etching. When the system recognizes a change in the partition level, the corresponding power interval and pulse mode will be enabled. If a partition is marked as a high-risk level, the pulse interval will be set larger to facilitate the cooling of the material between each pulse to avoid overheating. If the partition level is relatively low, the pulse interval can be shortened to increase the etching speed. At the same time, the start and end coordinates are processed in a more detailed segmentation, such as coordinate correction at the edge of the partition and ensuring a gradual transition of energy to avoid sudden power output at the junction of the partitions, which may cause material damage. This multi-level scheduling does not simply change the power or interval, but comprehensively schedules the output energy and scanning rhythm according to the partition characteristics, so as to achieve precise control of different risk areas throughout the scanning process.

[0076] After completing the configuration of the differentiated etching strategy, it is necessary to perform parameter assembly processing to obtain a control instruction set for local etching. At this time, the power mapping table and the multi-level scheduling strategy will be integrated into an executable instruction script or data file, and the power output value, pulse interval, scanning speed and corresponding coordinate range of the current partition will be clearly specified in each instruction. When reading the instruction set, the etching control system will execute it in sequence, and read the next instruction before the scanning head moves to the next partition, so that the partitioned etching of the material can be achieved. In order to keep the control instruction set consistent with the hardware layer during execution, it is necessary to define the format and parameter range of the instruction in advance according to the actual performance or communication protocol of the laser equipment, so that the system can accurately identify and execute it. For example, an instruction may include five fields: "partition number + power setting + pulse interval + scanning rate + start and end coordinates". Through the orderly analysis of these five fields, the laser etching process can complete the differentiated energy input according to the needs of the risk partition. The control instruction set formed in this way can perform etching at different energy levels and rhythms on risk areas of various levels on the same battery surface, minimizing the risk of ion migration or thermal shock, while maintaining the processing rate of some areas, making the management of the overall heat-affected zone more efficient and controllable.

[0077] Furthermore, according to the energy output threshold, the start and end coordinates of the laser scanning path and the pulse interval are subjected to multi-level scheduling processing to obtain a differentiated etching strategy configuration, including: segmenting the energy output threshold to obtain a threshold sequence for etching energy grading; according to the threshold sequence, matching and indexing the start and end coordinates of the laser scanning path to obtain a coordinate mapping relationship corresponding to each partition threshold; pulse interval evaluation processing is performed on the coordinate mapping relationship to obtain a scanning time configuration under different graded laser powers; according to the scanning time configuration, hierarchical merging processing is performed on the stepping speed and pulse interval of the laser scanning to obtain a multi-level scheduling matrix; regional assembly processing is performed on the multi-level scheduling matrix to obtain a differentiated etching strategy configuration.

[0078] Specifically, when the energy output threshold is segmented, it is necessary to combine the previously generated power preset value and the range corresponding to different risk levels in the heat affected zone, and establish segment mapping item by item to form a threshold sequence for etching energy classification. In order to ensure that this division process is flexible enough, several discrete segments can be made on the power axis, and the boundary position can be determined by quantitatively estimating the material response in each segment. If the thermal coupling effect within the range is kept within the ideal limit, the interval is determined as an available power segment and is assigned to the corresponding risk level in the subsequent steps. In order to quantify it numerically, a set of thresholds can be defined , arranged from low to high, used to divide the entire power output shaft into Each segment contains a safe energy threshold range that allows the corresponding area to meet the thermal stress limit requirements of the perovskite cell. In the process of constructing this set of thresholds, theoretical analysis is required based on the critical decomposition temperature of the material under pulsed laser and the measured thermal conductivity. The optimal number of segments and threshold boundaries can also be confirmed by curve fitting of previous experimental data. For laser-material interactions with significant nonlinear characteristics, custom piecewise functions can be introduced in the segment division. , for example, in some intervals To reflect the nonlinear absorption or heat dissipation mechanism, so that each threshold division is more in line with the material characteristics. The threshold sequence formed in this way is compatible with various laser power levels and provides a clear energy grading benchmark for subsequent scanning paths and pulse configurations. According to the threshold sequence, the start and end coordinates of the laser scanning path are matched and indexed. It is necessary to load the mapping table of coordinate partitions and energy segments in the scanning control system and link them according to the geographical distribution information obtained from the risk analysis. In order to accurately find the power threshold corresponding to each partition in the processing space, the risk distribution information of the heat-affected zone is often converted into a set of rectangular or polygonal areas, each of which has a level corresponding to a segment in the threshold sequence. At this time, the path planning algorithm needs to be extended in two aspects. One is to consider the matching between spatial coordinates and energy thresholds in the path planning process. The second is to enable the scanning head to retrieve new energy segments and automatically switch to the next threshold when moving across domains. When implementing this process, a matching indexing function can be constructed , let the function output at coordinates The index of the threshold segment that should be called at the coordinate space. If the risk level of a point in the coordinate space is high, it will cause Pointing to the lower energy segment. If the risk level is low, then Point to the higher energy segment. In this way, when the system traverses the scanning path, it can call the corresponding power range in real time and record the corresponding relationship between the start and end coordinates and the segment index in the path file. can be associated with the path planning The segmentation in which the energy preset and the spatial position are located is integrated into a unified data structure, realizing the accurate mapping of coordinates and threshold sequences.

[0079] The coordinate mapping relationship is evaluated by pulse interval evaluation to obtain the scanning time configuration under different graded laser powers. This step requires coupling the segment information in the coordinate mapping table with the parameters of the pulsed laser so that the material can have sufficient cooling or ion diffusion buffer time in the high-risk or high-threshold segment. The pulse interval can be defined as the time interval between laser emission pulses. If too short a pulse interval is used in the high-power segment, it is easy to cause excessive heat accumulation and induce ion migration or structural damage. To quantify this correlation, a relationship can be defined in the pulse strategy. If is the pulse interval, is the actual laser power used, then

[0080]

[0081] in and is a parameter that depends on the thermal diffusion properties of the material, is a constant that controls the degree of nonlinearity. This formula shows that in a partition with higher power, the pulse interval is longer, and a certain reference value can also be added. Avoid pulse intervals that are too short. After obtaining the relationship between the pulse interval and the power partition, the scanning time needs to be set accordingly, that is, to determine the total time to stay in a certain partition or scan a trajectory, in order to ensure that the etching uniformity and material safety are in parallel. In this way, the system can adjust the pulse interval accordingly according to the energy level of each segment in the threshold sequence by calling the above formula or a similar evaluation model and record it as a scanning time configuration table, so that the energy and pulse can maintain a suitable coupling state when the partition is switched. According to the scanning time configuration, the step speed and pulse interval of the laser scanning are hierarchically merged to obtain a multi-level scheduling matrix. At this time, it is necessary to combine the previous partition information on power and pulse interval with the scanning path planning strategy, and let the system query the most appropriate speed and interval settings within the corresponding coordinate range. In the digital implementation, a two-dimensional matrix can be constructed. , one dimension represents the power level, the other dimension represents the scanning speed or step rate, and each matrix element also contains the value of the pulse interval under this combination. When the coordinate mapping function indicates that the current laser is about to enter the partition When , we index the matrix No. Rows or columns, so as to obtain the corresponding speed and pulse parameters. If the entries in the matrix are rich enough, it can cover various risk levels and power requirements, and can also avoid insufficient processing due to excessive stepping speed, or thermal accumulation of materials due to low speed. When creating a multi-level scheduling matrix, spot size and overlap rate are also important references. If the spot is slightly larger, the scanning stepping speed must be reduced accordingly to ensure the etching accuracy. If the overlap rate increases, it is necessary to make a moderate increase or decrease in the pulse interval. After such a round of hierarchical merging, the energy output, stepping speed and pulse interval can be synchronously scheduled, and the optimal configuration can be made in the matrix table according to the needs of different partitions. When the multi-level scheduling matrix is ​​regionalized and assembled to obtain a differentiated etching strategy configuration, it is necessary to merge all partitions, threshold sequences, scanning time configurations and stepping speeds into an executable global planning file or data set, and enable the laser etching system to be dynamically called when the coordinate position changes. At this time, it is necessary to obtain the coordinate mapping function from the matrix O and the coordinate mapping function. All parameter items of the same partition are obtained from both, and they are packaged into a partition instruction set for the area. Each partition instruction set will contain fields such as power level, pulse interval, scanning speed and path coordinates. The laser controller switches to the corresponding instruction before entering the partition, so that the energy output and time rhythm of the laser change at the same time. If the entry information of the row or column index k is selected in the kth partition, the corresponding power, pulse and speed will be loaded into the system at one time, so that the subsequent scanning operation will always be maintained within the allocated segment setting. In the regionalized assembly processing, the transition connection of the partition edge can also be considered to ensure smooth transfer from the current row or column to the next row or column when crossing the zone, avoiding excessive power or speed jumps at the boundary. The differentiated etching strategy formed in this way can help the laser system allocate energy and time in an appropriate manner in a space with multiple risk levels, control the range of the heat-affected zone, and take into account the etching efficiency, so that the material can achieve the expected etching effect in a controlled thermal environment, and the risk of ion migration and thermal damage is effectively controlled.

[0082] 104. According to the control instruction set, the laser etching process of the perovskite battery is processed within a target range according to the etching strategy execution process to obtain an etching control scheme for managing the heat affected zone.

[0083] In one embodiment of the present invention, the etching strategy execution processing within the target range is performed on the laser etching process of the perovskite battery according to the control instruction set to obtain an etching control scheme for managing the heat affected zone, including: sequentially scheduling the energy output threshold and the differentiated etching strategy configuration contained in the control instruction set to obtain an etching start configuration; according to the etching start configuration, segmented pulse output processing is performed on the heat affected zone pre-marked by the perovskite battery to obtain an information feedback set containing local feature changes after etching; according to the information feedback set, the positioning path parameters in the laser etching area are limited and matched to obtain an etching control scheme for managing the heat affected zone.

[0084] Specifically, when sequentially scheduling the energy output threshold and the differentiated etching strategy configuration contained in the control instruction set, it is necessary to establish an instruction parsing and priority retrieval process in the laser processing system. The process first reads the energy output threshold of each risk partition and its corresponding pulse interval and scanning speed setting, and then retrieves each configuration in turn from high to low or from low to high according to the set risk level. During the retrieval process, if it is found that there is a conflict or overlapping area between adjacent configurations, the conflicting part is recorded as a section to be adjusted, and the power and step speed of the section are corrected accordingly in the instruction parsing table to meet the thermal sensitivity limit requirements of the material. After the system completes the scanning of the entire set of instruction configuration tables, it will generate an etching startup configuration arranged in sequence, covering the power upper line and scanning strategy required for each risk level, and ensuring that their connection has a smooth transition interval. The instruction parsing program relies on the dynamic tracking of the laser output characteristics. If it is detected that the actual power of the laser cannot meet the set value of a certain section when the startup configuration is generated, it will trigger a secondary correction mechanism. By allocating a slightly compromised power interval between adjacent sections, the final generated startup configuration can run stably within the executable range of the device. When the sequential scheduling process is completed, a complete startup configuration instruction set will be output, allowing the laser processing device to call them one by one in the established order when performing etching, thereby loading differentiated etching strategies in different partitions in turn.

[0085] According to the etching start configuration, when the heat-affected zone pre-marked by the perovskite cell is processed by segmented pulse output, it is necessary to divide the output of the laser beam into several time segments and space segments during the processing, and reference the corresponding power and interval parameters in the etching start configuration in each time segment. Before the system formally performs the etching operation, it will first read the information about the partition coordinates, pulse interval and energy distribution in the start configuration, and write it to the scanning path scheduling module of the device. When the laser head enters the range of a certain partition, the controller retrieves the power setting and pulse frequency of the partition, and then outputs the laser beam according to the set pulse mode, so that the material in the partition is subjected to energy impact matching the risk level of the heat-affected zone. In order to make the spatial boundary easier to determine, the coordinate system will accurately locate the edge coordinates of the high-risk area after optical or mechanical calibration, and complete the switching of the output parameters at the moment when the laser head is about to cross the boundary. Segmented pulse output can concentrate energy in a specific area, so that the area can complete material removal in a short pulse, and give the material enough cooling period in the pulse interval. After a section of etching is completed, the system will collect local feature change information on the console, including etching depth, surface optical reflectivity, and instantaneous temperature curve, and integrate this information into the information feedback set to indicate the actual etching effect and material loss degree. The segmented output strategy focuses on reducing heat accumulation in high-risk areas and maintaining high etching efficiency in low-risk areas. The information feedback set provides real-time basis for subsequent positioning path adjustments through sampling and analysis.

[0086] When the parameters of the path in the laser etching area are subjected to the limit matching process according to the information feedback set, the depth data, reflectivity change and local temperature peak distribution collected after the previous etching are completed need to be compared with the power and pulse parameters originally set in the etching start configuration. If there are some areas in the information feedback set that produce excessive material ablation, or obvious temperature anomalies appear at the heat-affected edge, the scanning speed or energy output on the path can be further tightened by the limit matching algorithm to avoid causing more serious material damage during repeated scanning. The limit matching algorithm can adjust the original path parameters based on a set of constraints. For example, the sections with high heat anomalies are marked as limit domains in the coordinate system, so that when the laser beam passes through these sections, the scanning speed or pulse energy is automatically reduced by one level to ensure that the local temperature field is maintained within a controllable range. If some partitions show insufficient etching in the feedback information, the system will also set a lower limit value in the limit algorithm to ensure that the laser beam will not reduce the power excessively in the next round of scanning, resulting in failure to etch normally. These dynamic limit adjustments will form a revised etching control scheme together with the initial startup configuration, which not only avoids excessive energy accumulation in highly sensitive areas, but also ensures processing efficiency in low-risk areas, and realizes a more delicate laser etching control process. The final etching control scheme is an enhanced and refined version of the initial differentiation strategy. Through multiple comparisons of information feedback sets, the accuracy and material stability of perovskite cell laser etching can be further improved.

[0087] In this embodiment, by performing multi-source data collection and calibration processing on the stacked structure of the perovskite battery, a calibration data set including temperature distribution, surface morphology and electrical characteristics is obtained; based on the calibration data set, a comprehensive analysis is performed on the area where the ion thermosensitive reaction occurs to obtain the risk zoning result of the heat-affected zone; based on the risk distribution result of the heat-affected zone, the energy output and movement path of the laser etching are differentially configured to obtain a control instruction set for local etching; according to the control instruction set, the laser etching process is executed to obtain an etching control scheme for managing the heat-affected zone. This method monitors and identifies heat-sensitive areas in real time based on the collection and analysis of multi-source data, controls the temperature distribution and local thermal stress during laser processing, reduces thermal damage by accurately adjusting the laser power and scanning path, and improves the long-term stability of the perovskite battery.

[0088] The above describes the method for controlling the heat-affected zone of a perovskite battery laser processing in an embodiment of the present invention. The following describes the device for controlling the heat-affected zone of a perovskite battery laser processing in an embodiment of the present invention. Figure 2 In one embodiment of the present invention, a device for controlling the heat-affected zone of a perovskite battery laser processing includes:

[0089] The multi-source data acquisition module 201 is used to perform multi-source data acquisition and calibration processing on the stacked structure of the perovskite battery to obtain a calibration data set including temperature distribution information, surface morphology parameters and local electrical characteristics;

[0090] The risk analysis module 202 is used to perform comprehensive analysis and processing on the area where ion thermosensitive reaction occurs in the perovskite battery according to the calibration data set to obtain the risk zoning result of the heat affected zone;

[0091] The etching configuration module 203 is used to perform differential configuration processing on the energy output and movement path of the laser etching according to the risk distribution result of the heat-affected zone, so as to obtain a control instruction set for local etching;

[0092] The etching execution module 204 is used to perform etching strategy execution processing within a target range on the laser etching process of the perovskite cell according to the control instruction set, and obtain an etching control solution for managing the heat affected zone.

[0093] In an embodiment of the present invention, the heat-affected zone control device for laser processing of perovskite battery runs the above-mentioned heat-affected zone control method for laser processing of perovskite battery. The heat-affected zone control device for laser processing of perovskite battery acquires a calibration data set including temperature distribution, surface morphology and electrical characteristics by performing multi-source data acquisition and calibration processing on the stacked structure of perovskite battery; based on the calibration data set, a comprehensive analysis is performed on the area where ion thermosensitive reaction is generated to obtain the risk zoning result of the heat-affected zone; based on the risk distribution result of the heat-affected zone, the energy output and the movement path of laser etching are differentially configured to obtain a control instruction set for local etching; according to the control instruction set, the laser etching process is executed to obtain an etching control scheme for managing the heat-affected zone. This method monitors and identifies heat-sensitive areas in real time based on the acquisition and analysis of multi-source data, controls the temperature distribution and local thermal stress in the laser processing process, reduces thermal damage by accurately adjusting the laser power and scanning path, and improves the long-term stability of the perovskite battery.

[0094] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described system, device, or unit can refer to the corresponding process in the aforementioned method embodiment and will not be repeated here.

[0095] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art or the whole or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk and other media that can store program code.

[0096] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for controlling the heat-affected zone of a perovskite cell laser processing, characterized in that: The method for controlling the heat-affected zone of a perovskite cell laser processing comprises: Perform multi-source data acquisition and calibration processing on the stacked structure of perovskite cells to obtain a calibration data set containing temperature distribution information, surface morphology parameters, and local electrical characteristics; Based on the calibration data set, a comprehensive analysis is performed on the area where ion thermosensitive reaction occurs in the perovskite battery to obtain a risk zoning result of the heat-affected zone; According to the risk zoning result of the heat-affected zone, energy output and movement path of laser etching are differentially configured to obtain a control instruction set for local etching; According to the control instruction set, the laser etching process of the perovskite cell is processed by executing the etching strategy within the target range to obtain an etching control scheme for managing the heat affected zone.

2. According to the method for controlling the heat affected zone of a perovskite cell laser processing according to claim 1, the multi-source data acquisition and calibration processing of the stacked structure of the perovskite cell to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics includes: The temperature detection signal on the stacked structure of the perovskite battery is sensed, received and processed to obtain the temperature distribution information of the recorded temperature time series and distribution area; According to the temperature distribution information, the reflected optical information of the surface of the perovskite cell is subjected to fixed-point comparison processing to obtain surface morphology parameters indicating film thickness uniformity and defect distribution; According to the surface morphology parameters, a local electrical measurement signal collected from the back electrode port of the perovskite cell is synchronously calibrated to obtain a local electrical characteristic including local conductivity and contact resistance characteristics; The temperature distribution information, electrical correlation data and the surface morphology parameters are matched and merged to obtain a corresponding calibration data set.

3. According to the method for controlling the heat affected zone of a perovskite battery laser processing in claim 1, the region where the ion thermosensitive reaction occurs in the perovskite battery is comprehensively analyzed and processed according to the calibration data set to obtain the risk zoning result of the heat affected zone, which includes: According to the temperature distribution information in the calibration data set, the areas with temperature gradient greater than a threshold are screened in sections to obtain a list of suspected hot spots; According to the list of suspected hot spots, a difference comparison process is performed on the electrical correlation data in the corresponding area to obtain the distribution of hot spots with signs of ion migration; According to the distribution of hot spots, the topographical reference data is locally superimposed to obtain a heat-affected zone risk zoning result that comprehensively reflects the coupling effect of thermal stress and defect distribution.

4. According to the method for controlling the heat affected zone of laser processing of perovskite cells in claim 3, the electrical correlation data in the corresponding area is subjected to difference comparison processing according to the list of suspected hot spots to obtain the distribution of hot spot areas with signs of ion migration, including: Performing multi-segment index extraction processing on the coordinate information of the suspected hot spot list to obtain a coordinate index set corresponding to the suspected hot spot; According to the coordinate index set, the electrical measurement data is subjected to time alignment processing to obtain an electrical waveform segment corresponding to each suspected hot spot; Performing multi-dimensional difference screening processing on the electrical waveform segments to obtain candidate abnormal conductivity intervals; According to the candidate abnormal conductivity interval, the bias current distribution of the hot spot area is subjected to threshold segmentation processing to obtain the hot spot area distribution with signs of ion migration.

5. According to the method for controlling the heat-affected zone of laser processing of perovskite cells in claim 1, the energy output and the path of laser etching are differentially configured according to the risk distribution result of the heat-affected zone to obtain a control instruction set for local etching, which includes: Performing laser power preset processing on different partition level information in the risk distribution result of the heat affected zone to obtain corresponding energy output thresholds; According to the energy output threshold, multi-level scheduling processing is performed on the start and end coordinates of the laser scanning path and the pulse interval to obtain a differentiated etching strategy configuration; The differentiated etching strategy configuration is subjected to parameter assembly processing to obtain a control instruction set for local etching.

6. According to the method for controlling the heat affected zone of perovskite battery laser processing in claim 5, the multi-level scheduling processing of the start and end coordinates of the laser scanning path and the pulse interval is performed according to the energy output threshold to obtain a differentiated etching strategy configuration, which includes: Performing segmentation processing on the energy output threshold to obtain a threshold sequence for etching energy grading; According to the threshold sequence, matching and indexing processing is performed on the start and end coordinates of the laser scanning path to obtain a coordinate mapping relationship corresponding to each partition threshold; Performing pulse interval evaluation processing on the coordinate mapping relationship to obtain scanning time configurations under different graded laser powers; According to the scanning time configuration, the stepping speed and pulse interval of the laser scanning are hierarchically merged to obtain a multi-level scheduling matrix; The multi-level scheduling matrix is ​​subjected to regional assembly processing to obtain a differentiated etching strategy configuration.

7. According to the method for controlling the heat affected zone of laser processing of perovskite battery in claim 1, the etching strategy execution processing is performed within the target range on the laser etching process of the perovskite battery according to the control instruction set, and the etching control scheme for managing the heat affected zone includes: Performing sequential scheduling processing on the energy output threshold and the differentiated etching strategy configuration included in the control instruction set to obtain an etching start configuration; According to the etching start configuration, a segmented pulse output process is performed on the heat-affected zone pre-marked by the perovskite battery to obtain an information feedback set containing local feature changes after etching; According to the information feedback set, the positioning path parameters in the laser etching area are subjected to amplitude limiting matching processing to obtain an etching control scheme for managing the heat affected zone.

8. A heat-affected zone control device for laser processing of perovskite cells, characterized in that: The perovskite battery laser processing heat affected zone control device comprises: The multi-source data acquisition module is used to collect and calibrate the multi-source data of the stacked structure of the perovskite battery to obtain a calibration data set containing temperature distribution information, surface morphology parameters and local electrical characteristics; A risk analysis module, used to perform comprehensive analysis and processing on the area where ion thermosensitive reaction occurs in the perovskite battery according to the calibration data set, and obtain the risk zoning result of the heat-affected zone; An etching configuration module, used to perform differentiated configuration processing on the energy output and movement path of laser etching according to the risk distribution result of the heat-affected zone, so as to obtain a control instruction set for local etching; The etching execution module is used to execute the etching strategy within the target range of the laser etching process of the perovskite battery according to the control instruction set, so as to obtain an etching control scheme for managing the heat affected zone.

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