Semiconductor device, manufacturing method thereof and electronic equipment

Abstract

The invention relates to the technical field of semiconductor devices, and provides a semiconductor device, a manufacturing method thereof and electronic equipment in order to solve the problem that the application scene of the semiconductor device is limited, and the method comprises the steps: completing the manufacturing of source and drain ohms and gate metal of a GaAs MMIC active device, and forming a passivation protection layer; a filter area is defined, and a Mo / AlNSc / Mo multilayer metal structure is deposited in a laminated mode; in the filter area, a bottom electrode, a piezoelectric layer and an upper electrode are formed by adopting photoetching and etching processes, and a BAW structure is formed; depositing a dielectric isolation layer; performing primary metal wiring on the front surface to form a passivation protection layer; and completing a back process. According to the invention, heterogeneous monolithic integration of a GaAs MMIC radio frequency circuit and a BAW structure filter based on an AlN material can be realized, so that signal amplification and filtering conditioning can be realized on a monolithic circuit, and a high-integration-level process solution is provided for a high-performance semiconductor device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a method for manufacturing a semiconductor device, a semiconductor device and an electronic device. Background Art

[0002] GaAs (Gallium Arsenide) MMIC (Monolithic Microwave Integrated Circuit) has high electron mobility and has great advantages in frequency, gain and efficiency. It is resistant to high temperature, low noise and strong in radiation resistance. It is suitable for low noise amplifiers, switches and logic control integrated chips. However, it does not have filtering function, which limits its application in some high-performance systems.

[0003] Therefore, how to provide a high-performance GaAs MMIC semiconductor device and broaden the application scenarios of a single GaAs MMIC has become a technical problem that urgently needs to be solved. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a semiconductor device and a manufacturing method thereof, and an electronic device, which can realize heterogeneous monolithic integration of GaAs MMIC radio frequency circuits and BAW (Bulk Acoustic Wave) structure filters based on AlN (aluminum nitride) materials, thereby realizing signal amplification and filtering conditioning on a monolithic circuit, providing a highly integrated process solution for high-performance semiconductor devices.

[0005] The technical solution adopted by the present invention is as follows: The first aspect of the present invention provides a method for manufacturing a semiconductor device, comprising the following steps: completing the production of source and drain ohmic metal and gate metal of a GaAs MMIC active device and forming a passivation protective layer to obtain a first semi-finished product; defining a filter area on the first semi-finished product, and stacking and depositing a multilayer metal structure of Mo / AlNSc / Mo to obtain a second semi-finished product, wherein the passivation protective layer etched in the filter area stops on the GaAs epitaxial layer, and AlNSc is AlN (aluminum nitride) doped with Sc (scandium); in the filter area, a bottom electrode, a piezoelectric layer and an upper electrode are formed by photolithography and etching processes to form a BAW structure; a dielectric isolation layer is deposited to cover the entire front area of ​​the wafer to obtain a third semi-finished product; a metal wiring is performed on the front of the third semi-finished product to form a passivation protective layer to obtain a fourth semi-finished product; and the back process of the fourth semi-finished product is completed to form a semiconductor device integrating GaAs MMIC and AlNSc BAW filters.

[0006] The semiconductor device manufacturing method of the present invention also has the following additional technical features: According to one embodiment of the present invention, a PECVD (Plasma Enhanced Chemical Vapor Deposition) thin film process is used to form a passivation protection layer of silicon nitride.

[0007] According to an embodiment of the present invention, a multilayer metal structure of Mo / AlNSc / Mo is formed by a PVD (Physical Vapor Deposition) process.

[0008] According to one embodiment of the present invention, in the filter area, a bottom electrode, a piezoelectric layer and an upper top electrode are formed by photolithography and etching processes to form a BAW structure, including: using photoresist to protect the first area in the filter area, and using photolithography and etching to form the upper electrode and piezoelectric layer part of the BAW structure to obtain; using photoresist to protect the second area in the filter area, and using photolithography and etching to form the bottom electrode of the BAW structure, wherein the first area is included in the second area; stripping the photoresist to form the BAW structure.

[0009] According to one embodiment of the present invention, a dielectric isolation layer of SiO2 is deposited using a PECVD process.

[0010] According to one embodiment of the present invention, after obtaining the fourth semi-finished product, the method further includes: integrating passive components on the front side of the fourth semi-finished product; and performing secondary metal wiring.

[0011] According to one embodiment of the present invention, the fourth semi-finished product back process is completed, including: thinning the thickness of the GaAs wafer; using a back dry etching process to simultaneously perform back hole etching of the GaAs HEMT (High Electron Mobility Transistor) area and the filter area, and stopping the etching at the metal layer; using double-sided photolithography technology to protect the back part of the filter area with photoresist; exposing the GaAs HEMT area, depositing and electroplating a back metal seed layer to form a back grounding metal layer; stripping the back photoresist and removing the front protective dummy (referring to a semiconductor element or structure without function).

[0012] According to one embodiment of the present invention, the GaAs wafer is thinned to a thickness of 100 um.

[0013] A second aspect of the present invention provides a semiconductor device manufactured based on the method for manufacturing a semiconductor device described in the first aspect of the present invention.

[0014] A third aspect of the present invention provides an electronic device, comprising the semiconductor device described in the second aspect of the present invention.

[0015] Beneficial effects of the present invention: The manufacturing method of the semiconductor device proposed in the present invention can realize the heterogeneous monolithic integration of GaAs MMIC radio frequency circuits and BAW structure filters based on AlN materials, thereby realizing signal amplification and filtering conditioning on a monolithic circuit, providing a highly integrated process solution for high-performance semiconductor devices, and has broad application prospects in mobile communications, satellite communications, wireless communications, radar systems and sensor systems.

[0016] AlN deposited by PVD process can achieve better electromechanical coupling coefficient after being doped with Sc, which is more conducive to the manufacture of filter devices based on AlN materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a flow chart of a method for manufacturing a semiconductor device according to an embodiment of the present invention; Figure 2 is a schematic diagram of a first semi-finished product according to an embodiment of the present invention; Figure 3 is a schematic diagram of a second semi-finished product according to an embodiment of the present invention; Figure 4 is a schematic diagram of forming an upper electrode and a piezoelectric layer of a BAW structure according to an embodiment of the present invention; Figure 5 is a schematic diagram of forming a bottom electrode of a BAW structure according to an embodiment of the present invention; Figure 6 is a schematic diagram of a BAW structure according to an embodiment of the present invention; Figure 7 is a schematic diagram of a third semi-finished product according to an embodiment of the present invention; Figure 8 is a schematic diagram of primary metal wiring on the front side of a third semi-finished product according to an embodiment of the present invention; Fig. 9 is a schematic diagram of a fourth semi-finished product according to an embodiment of the present invention; Fig.10 is a schematic diagram of a first backside process of a fourth semi-finished product according to an embodiment of the present invention; Fig.11 is a schematic diagram of a second back surface process of a fourth semi-finished product according to an embodiment of the present invention; Fig.12 FIG. 4 is a schematic diagram of a finished product of a semiconductor device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. The same fillings in the figures represent the same materials. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Figure 1 is a flow chart of a method for manufacturing a semiconductor device according to an embodiment of the present invention, Figure 1 As shown, the manufacturing method comprises the following steps: S1, completing the production of source and drain ohmic metal and gate metal of the GaAs MMIC active device and forming a passivation protection layer to obtain a first semi-finished product.

[0020] In a specific embodiment of the present invention, a PECVD thin film process is used to form a passivation protection layer of silicon nitride.

[0021] Specifically, Figure 2 As shown, the GaAs MMIC front process is completed to the source ohmic metal 11, the drain ohmic metal 12 and the gate metal 13 of the active device, and a typical silicon nitride (SiNx) passivation protection layer 2 is formed by a PECVD thin film process. The passivation protection layer can be formed by multiple thin film depositions to obtain a first semi-finished product. The GaAs MMIC epitaxial layer 10 adopts a typical heterojunction epitaxial structure of GaAs / GaAlAs / GaAs.

[0022] S2, defining a filter area on the first semi-finished product, and stacking and depositing a multilayer metal structure of Mo / AlNSc / Mo to obtain a second semi-finished product, wherein the passivation protection layer etched in the filter area stops on the GaAs epitaxial layer, and AlNSc is AlN doped with Sc.

[0023] Further, according to an embodiment of the present invention, a multilayer metal structure of Mo / AlNSc / Mo is formed by a PVD process.

[0024] Specifically, Figure 3 As shown, a filter region 3 is defined, and then a typical Mo / AlNSc / Mo multilayer metal structure (31, 32 and 33) is formed by a PVD process to obtain a second semi-finished product. In the multilayer metal structure, the upper layer Mo is used as the top electrode 31, the middle layer AlNSc is used as the piezoelectric layer 32, and the lower layer Mo is used as the bottom electrode 33 to obtain the second semi-finished product, wherein AlNSc is AlN doped with Sc, and the Sc content is about 20%.

[0025] S3, in the filter area, a bottom electrode, a piezoelectric layer and an upper electrode are formed by photolithography and etching processes to form a BAW structure.

[0026] Furthermore, in one embodiment of the present invention, in the filter area, a bottom electrode, a piezoelectric layer and an upper top electrode are formed by photolithography and etching processes to form a BAW structure, including: using photoresist to protect the first area in the filter area, and using photolithography and etching to form the upper electrode and piezoelectric layer portion of the BAW structure; using photoresist to protect the second area in the filter area, and using photolithography and etching to form the bottom electrode of the BAW structure, wherein the first area is included in the second area; stripping the photoresist to form the BAW structure.

[0027] Specifically, Figure 4 As shown, a photoresist 4 is used to protect the first area in the filter area 3, and photolithography and etching are used to form the upper electrode 31 and the piezoelectric layer 32 of the BAW structure. Then, as shown in FIG. Figure 5 As shown, the second region in the filter region 3 is protected by photoresist, and the bottom electrode 33 of the BAW structure is formed by photolithography and etching. The first region is included in the second region. Then, the photoresist is stripped to form Figure 6 The BAW structure shown in .

[0028] S4, depositing a dielectric isolation layer to cover the entire front area of ​​the wafer to obtain a third semi-finished product.

[0029] In one embodiment of the present invention, a dielectric isolation layer 5 of SiO2 is deposited by PECVD process to cover the entire front area of ​​the wafer, forming a Figure 7 The third semi-finished product is shown.

[0030] S5, performing a metal wiring on the front side of the third semi-finished product to form a passivation protection layer to obtain a fourth semi-finished product.

[0031] Furthermore, according to an embodiment of the present invention, after obtaining the fourth semi-finished product, the method further includes: integrating passive components on the front side of the fourth semi-finished product; and performing secondary metal wiring.

[0032] Specifically, Figure 8 As shown, a metal wiring is completed on the front of the third semi-finished product, and a metal wiring 6 is performed on the source and drain ohmic metal and gate metal regions and the BAW structure bottom electrode 33 and top electrode 31 regions to complete good electrical contact and wiring. The metal type is a stacked metal of Ti / Ni / Au. Then, a typical SiNx silicon nitride passivation protective layer 2 is formed by a PECVD thin film process to obtain Fig. 9The fourth semi-finished product shown in the figure can be subsequently integrated with passive devices such as thin film resistors, metal capacitors, etc. according to application requirements, and then secondary metal wiring and tertiary metal wiring can be performed, and the metal wiring can use a typical air bridge structure or a dielectric bridge structure.

[0033] S6, completing the backside process of the fourth semi-finished product to form a semiconductor device integrating GaAs MMIC and AlNSc BAW filter.

[0034] Further, according to an embodiment of the present invention, a fourth semi-finished product backside process is completed, including: thinning the thickness of the GaAs wafer; using a backside dry etching process to simultaneously perform backhole etching of the GaAs HEMT region and the filter region, and stopping the etching at the metal layer; using double-sided photolithography technology to protect the back side portion of the filter region with photoresist; exposing the GaAs HEMT region, depositing and electroplating a backside metal seed layer to form a backside grounding metal layer; stripping the backside photoresist and removing the front side protective dummy.

[0035] Specifically, after completing the front process, the typical GaAs compound back process is entered: Fig.10 As shown, firstly, the thickness of the GaAs wafer is thinned, for example, the thickness of the GaAs wafer is thinned to 100um, and then a backside dry etching process is used to simultaneously perform backhole etching of the GaAs HEMT region and the filter region, and the etching stops at the metal layer. Then, as shown Fig.11 As shown, double-sided photolithography technology is used to protect the back part of the filter area with photoresist 4, and the GaAs HEMT area is exposed, and the back metal seed layer is deposited and electroplated to form the back grounding metal layer 7. Finally, as shown in FIG. Fig.12 As shown, the back photoresist is stripped and the front protection dummy is removed to complete the back process of the fourth semi-finished product to form Fig.12 The semiconductor device shown is a combination of GaAs MMIC and AlNSc BAW filter. Dummy refers to a semiconductor component or structure without function in the chip, usually used to fill the unused area of ​​the chip to ensure that the structure and performance of other parts can be maintained.

[0036] Fig.12 Shown is a schematic diagram of the integration of a high-performance MMIC device with a back-cavity structure and AlNSc BAW filter and GaAs HEMT as the core device, without showing the secondary or tertiary wiring on the front side, providing a highly integrated process solution for the next generation of high-performance RF signal amplification and filtering.

[0037] The manufacturing method of the semiconductor device of the present invention realizes the heterogeneous monolithic integration of GaAs MMIC radio frequency circuit and BAW structure filter based on AlN material, thereby realizing the conditioning of signal amplification and filtering on a monolithic circuit, and has wide application potential in the following fields: Mobile communications: can be used in smartphones and other mobile devices to provide better signal processing and spectrum efficiency; Satellite and wireless communications: In satellite communications and wireless networks, it can provide the required high frequency and high power performance while minimizing size and power consumption; Radar and Sensor Systems: This can be used in radar and sensor systems to provide high-precision signal detection and processing capabilities.

[0038] In summary, the method for manufacturing a semiconductor device according to an embodiment of the present invention can realize heterogeneous monolithic integration of a GaAs MMIC RF circuit and a BAW structure filter based on AlN material, thereby realizing signal amplification and filtering conditioning on a monolithic circuit, providing a highly integrated process solution for high-performance semiconductor devices, and having broad application prospects in mobile communications, satellite communications, wireless communications, radar systems, and sensor systems; AlN deposited by the PVD process, after being doped with Sc, can achieve a better electromechanical coupling coefficient, which is more conducive to the manufacture of filter devices based on AlN materials.

[0039] In addition, the present invention also provides a semiconductor device, which is manufactured based on the semiconductor device manufacturing method of the present invention.

[0040] According to the semiconductor device of the embodiment of the present invention, the semiconductor device is manufactured by the above-mentioned semiconductor device manufacturing method, and the heterogeneous monolithic integration of GaAs MMIC radio frequency circuit and BAW structure filter based on AlN material can be realized, so that the amplification and filtering conditioning of the signal can be realized on the monolithic circuit, and a highly integrated process solution is provided for high-performance semiconductor devices, which has broad application prospects in mobile communications, satellite communications, wireless communications, radar systems and sensor systems; AlN deposited by PVD process can achieve a better electromechanical coupling coefficient after being doped with Sc, which is more conducive to the manufacture of filter devices based on AlN materials.

[0041] In addition, the present invention also provides an electronic device, comprising the semiconductor device of the present invention.

[0042] According to the electronic device of the embodiment of the present invention, the above-mentioned semiconductor device can be used to realize heterogeneous monolithic integration of GaAs MMIC radio frequency circuit and BAW structure filter based on AlN material, so that signal amplification and filtering conditioning can be realized on a monolithic circuit, providing a highly integrated process solution for high-performance semiconductor devices, and having broad application prospects in mobile communications, satellite communications, wireless communications, radar systems and sensor systems; AlN deposited by PVD process can achieve a better electromechanical coupling coefficient after being doped with Sc, which is more conducive to the manufacture of filter devices based on AlN materials.

[0043] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0044] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0046] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0047] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code that includes one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present invention includes alternative implementations in which functions may not be performed in the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present invention belong.

[0048] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as an ordered list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in combination with these instruction execution systems, devices or apparatuses. For the purposes of this specification, "computer-readable medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or apparatus, or in combination with these instruction execution systems, devices or apparatuses. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection with one or more wires (electronic device), a portable computer disk box (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing in other suitable ways if necessary, and then stored in a computer memory.

[0049] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0050] A person skilled in the art may understand that all or part of the steps in the method for implementing the above-mentioned embodiment may be completed by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, which, when executed, includes one or a combination of the steps of the method embodiment.

[0051] In addition, each functional unit in each embodiment of the present invention may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0052] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: The following steps are involved: The source and drain ohmic metal and gate metal of the GaAs MMIC active device are fabricated and a passivation protection layer is formed to obtain a first semi-finished product; A filter region is defined on the first semi-finished product, and a multilayer metal structure of Mo / AlNSc / Mo is deposited in layers to obtain a second semi-finished product, wherein the passivation protection layer etched in the filter region stops on the GaAs epitaxial layer, and AlNSc is AlN doped with Sc; In the filter area, a bottom electrode, a piezoelectric layer, and a top electrode are formed by photolithography and etching processes to form a BAW structure; Depositing a dielectric isolation layer to cover the entire front area of ​​the wafer to obtain a third semi-finished product; Performing a primary metal wiring on the front side of the third semi-finished product to form a passivation protection layer to obtain a fourth semi-finished product; The fourth semi-finished product backside process is completed to form a semiconductor device integrating GaAs MMIC and AlNSc BAW filter.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The PECVD thin film process is used to form a passivation protective layer of silicon nitride.

3. The method for manufacturing a semiconductor device according to claim 1, wherein: The multilayer metal structure of Mo / AlNSc / Mo is formed by PVD process.

4. The method for manufacturing a semiconductor device according to claim 1, wherein: In the filter area, the bottom electrode, piezoelectric layer and top electrode are formed by photolithography and etching processes to form a BAW structure, including: A first area in the filter area is protected by using a photoresist, and an upper electrode and a piezoelectric layer portion of the BAW structure are formed by using photolithography and etching; Protecting a second region in the filter region with a photoresist, and forming a bottom electrode of the BAW structure by photolithography and etching, wherein the first region is included in the second region; The photoresist is stripped off to form the BAW structure.

5. The method for manufacturing a semiconductor device according to claim 1, wherein: The dielectric isolation layer of SiO2 is deposited by PECVD process.

6. The method for manufacturing a semiconductor device according to claim 1, wherein: After obtaining the fourth semi-finished product, it also includes: Integrating passive components on the front side of the fourth semi-finished product; Perform secondary metal wiring.

7. The method for manufacturing a semiconductor device according to claim 1, wherein: The fourth semi-finished product back side process is completed, including: Thinning GaAs wafer thickness; The backside dry etching process is used to simultaneously perform backhole etching in the GaAs HEMT area and the filter area, and the etching stops at the metal layer; Double-sided photolithography is used to protect the back side of the filter area with photoresist; The GaAs HEMT area is exposed, and a back metal seed layer is deposited and electroplated to form a back grounding metal layer; Strip the backside photoresist and remove the front side protective dummy.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: Thinning GaAs wafer to 100um thickness.

9. A semiconductor device, characterized in that: The semiconductor device is manufactured according to the method for manufacturing a semiconductor device according to any one of claims 1 to 8.

10. An electronic device, characterized in that: Comprising the semiconductor device according to claim 9.

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