Device, production method and method for operating device having gate driver and at least one connected power semiconductor

Abstract

The invention relates to a device having a gate driver (10) and at least one first power semiconductor (12a) which is connected to the gate driver (10) via a first conductor path (14a), the device having an overvoltage detection means (18), the overvoltage detection means are electrically connected to at least the first conductor path (14a) in such a way. A first voltage (U1) applied to the first conductor path (14a) can be tapped by means of the overvoltage detection means (18) and the first voltage can be compared with a first voltage threshold value which is currently specified for the overvoltage detection means (18) or is set at the overvoltage detection means (18), if the first voltage (U1) exceeds the first voltage threshold value, at least one first output signal can be output by means of the overvoltage detection means (18), by means of which at least one protection element (20) outside the gate driver and / or inside the gate driver can be controlled in such a way that the overvoltage detection means (18) detects the first voltage (U1). In this way, the respective gate of the first power semiconductor (12a) is short-circuited with a reference potential of the first power semiconductor (12a) by means of at least one protection element (20) controlled by at least one first output signal, whereby a first voltage (U1) acting on the first conductor path (14a) is reduced.

Description

Technical Field

[0001] The present invention relates to an arrangement having a gate driver and at least one power semiconductor, which is connected to the gate driver via conductor tracks. The present invention also relates to a method for producing an arrangement having a gate driver and at least one connected power semiconductor. Furthermore, the present invention relates to a method for operating an arrangement having a gate driver and at least one connected power semiconductor. Background Art

[0002] Devices are known from the prior art, such as, for example, DE 10 2014 221 124 A1, which are each equipped with a gate driver and at least one power semiconductor, which is connected to the associated gate driver via conductor tracks. Summary of the Invention

[0003] The invention provides a device having the features of claim 1, a method for producing a device having a gate driver and at least one connected first power semiconductor having the features of claim 8, and a method for operating a device having a gate driver and at least one connected power semiconductor having the features of claim 11.

[0004] Advantages of the present invention

[0005] The present invention provides an advantageous solution for preventing destruction or damage of a gate driver if a power semiconductor operated by the gate driver is defective. In particular, the present invention can prevent high voltages and currents from reaching the driver output of the gate driver used to operate the defective power semiconductor in the event of a defective power semiconductor. In contrast, the present invention causes a short circuit of the corresponding gate of the defective power semiconductor in the event of a defective operated power semiconductor, thereby reducing the voltage applied to the conductor tracks by which the defective power semiconductor is connected to its assigned gate driver, thereby reliably preventing undesirable destruction or damage of the gate driver. This contributes to an increase in the service life of the gate driver or a device constructed using the gate driver. Furthermore, the present invention ensures that the gate driver can perform its functions, particularly safety-related functions, even if the power semiconductor it operates is defective. Consequently, the present invention can be particularly advantageously used in applications where failure of the gate driver of the corresponding device is critical. The present invention can be advantageously used primarily in the automotive sector.

[0006] In an advantageous embodiment of the device, a first fuse is arranged in the first conductor track, which can be opened by a short-circuited gate of the first power semiconductor. Opening the first fuse arranged in the first conductor track allows the defective first power semiconductor to be electrically disconnected from the gate driver used to operate it. This contributes to improving the safety standards of the embodiments of the device described herein in the event of a defective first power semiconductor.

[0007] In another advantageous embodiment of the device, the first conductor track is electrically connected to the supply conductor track of the gate driver via a first connecting conductor track, wherein a first protection diode is arranged in the first connecting conductor track and / or at least one buffer capacitor is electrically connected to the first connecting conductor track. In this case, a fault current triggered by a defect in the first power semiconductor can be dissipated relatively quickly to the connecting conductor track via the first protection diode. Preferably, the gate of the first power semiconductor is short-circuited to the source or emitter connection of the first power semiconductor as a reference potential for the first power semiconductor by means of the activated protection element. This allows the components of the first power semiconductor to be used (together) as a safe reference potential.

[0008] As an advantageous improvement, the device can comprise at least one further power semiconductor, the gate of which is electrically connected to at least one further gate driver output of the gate driver via a respective further conductor track, and the total number Z of power semiconductors of the device can be greater than or equal to 2, wherein for 1<n≤Z the overvoltage detection device is additionally electrically connected to the nth conductor track and is constructed such that the nth voltage correspondingly applied to the nth conductor track can be tapped by means of the overvoltage detection device and can be compared with the first voltage threshold value or a correspondingly assigned voltage currently predetermined for the overvoltage detection device or at an overvoltage threshold value. The nth voltage threshold value set on the voltage detection device is compared, and if the nth voltage exceeds the first voltage threshold value or the correspondingly assigned nth voltage threshold value, at least one further output signal can be output by means of the overvoltage detection device, by means of which at least one further protection element external to the gate driver and / or internal to the gate driver can be actuated such that the gate of the nth power semiconductor electrically connected to the nth conductor track is short-circuited to the reference potential of the nth power semiconductor by means of the at least one actuated further protection element, thereby correspondingly reducing the nth voltage present on the nth conductor track. The development of the device described herein thus advantageously enables a device equipped with multiple power semiconductors to react to a defect in one of its power semiconductors.

[0009] Alternatively, if the arrangement comprises at least one further power semiconductor, the gate of which is electrically connected to at least one further gate driver output of the gate driver via a respective further conductor track, and the total number Z of power semiconductors of the arrangement is greater than or equal to 2, then for 1<n≤Z the overvoltage detection device can additionally be electrically connected to the nth conductor track and designed such that the nth voltage, which is respectively present on the nth conductor track, can be tapped by means of the overvoltage detection device and compared to the first voltage threshold value or the correspondingly assigned and currently overvoltage detection threshold value. The overvoltage detection device compares the nth voltage threshold value predetermined by the device or set in the overvoltage detection device, and as soon as the nth voltage exceeds the first voltage threshold value or the corresponding assigned nth voltage threshold value, the overvoltage detection device can output at least one further output signal, by means of which a single protective element of the device can be actuated so that the gate of the nth power semiconductor electrically connected to the nth conductor track is short-circuited to the reference potential of the nth power semiconductor by means of the actuated protective element, thereby correspondingly reducing the nth voltage present on the nth conductor track. The advantages described in the preceding paragraphs can thus also be achieved by means of a single protective element.

[0010] For example, the at least one protective element can include at least one thyristor and / or at least one circuit element similar to a thyristor. As a result, a relatively cost-effective type of circuit element can be used for / as the at least one protective element.

[0011] The advantages described above are also ensured by carrying out a corresponding method for producing a device having a gate driver and at least one connected first power semiconductor.

[0012] Furthermore, the implementation of a corresponding method for operating an arrangement having a gate driver and at least one connected first power semiconductor also offers the advantages explained above. Advantageously, the first voltage threshold can be predetermined using a reference voltage. It should be noted that the manufacturing method and the method for operating an arrangement having a gate driver and at least one connected first power semiconductor can be developed according to the above-explained embodiments of the arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Other features and advantages of the present invention are explained below with reference to the accompanying drawings, wherein:

[0014] Figure 1 A schematic diagram illustrating one embodiment of the device is shown;

[0015] Figure 2A flow chart is shown for explaining one specific embodiment of the method for producing a device having a gate driver and at least one connected first power semiconductor; and

[0016] Figure 3 A flow chart is shown for explaining one specific embodiment of the method for operating an arrangement having a gate driver and at least one connected first power semiconductor. DETAILED DESCRIPTION

[0017] Figure 1 A schematic diagram of one embodiment of the apparatus is shown.

[0018] exist Figure 1 The device schematically shown in the figure has a gate driver 10 and at least one first power semiconductor 12a, which has a gate and a reference potential. The gate of the first power semiconductor 12a is electrically connected to a first gate driver output 16a of the gate driver 10 via a first conductor track 14a. Optionally, the device can also have at least one further power semiconductor 12b, each having a gate and a reference potential, wherein the respective gate of at least one further power semiconductor 12b is electrically connected to at least one further gate driver output 16b of the gate driver 10 via a respective further conductor track 14b. In particular, the at least one reference potential can be the source connection or emitter connection of the respective power semiconductor 12a or 12b. Figure 1 The total number Z schematically shown in is to be interpreted merely as an example.

[0019] The gate driver 10 can be, for example, an application-specific integrated circuit (ASIC). The "at least one power semiconductor 12a and 12b of the device" can refer to a semiconductor component that can be used / implemented in a power electronics device. The at least one power semiconductor 12a and 12b of the device can be, for example, a bipolar transistor (IGBT) with an insulated gate electrode and / or a metal oxide semiconductor field-effect transistor (MOSFET), such as, in particular, a Si MOSFET and / or a SiC MOSFET.

[0020] At least one power semiconductor 12a and 12b of the device is driven by a gate driver 10. To this end, the at least one power semiconductor 12a and 12b can be electrically connected, for example, via a direct DC connection as a corresponding conductor track 14a and 14b to a correspondingly assigned gate driver output 16a and 16b of the gate driver 10. The at least one power semiconductor 12a and 12b can be driven by the gate driver 10, in particular, via an additional gate resistor (not shown) of the corresponding power semiconductor 12a and 12b.

[0021] In addition, the device described here also has an overvoltage detection device 18, which is electrically connected to at least the first printed conductor 14a and is configured so that the first voltage U1 applied to the first printed conductor 14a can be tapped by means of the overvoltage detection device 18. The first voltage U1 tapped on the first printed conductor 14a can be compared with a first voltage threshold value by means of the overvoltage detection device 18. The first voltage threshold value can be a voltage threshold value (fixedly) set on the overvoltage detection device 18. As an alternative, the first voltage threshold value of the overvoltage detection device 18 can also be, for example, a voltage threshold value currently set by means of the reference voltage U ref A predetermined voltage threshold is specified. Figure 1 In the embodiment of FIG, the overvoltage detection mechanism 18 is a comparator 18. As a result, a low-cost component can be used for the overvoltage detection mechanism 18. However, it should be pointed out that the constructability of the overvoltage detection mechanism 18 is not limited to such a component.

[0022] If the first power semiconductor 12a is defective, such as, for example, a low-resistance gate of the first power semiconductor 12a or a short circuit between its gate and its drain or collector, a high first voltage U1 and a relatively high fault current typically occur in the first conductor track 14a. By comparing the first voltage U1 present on the first conductor track 14a with a first voltage threshold, the overvoltage detection device 18 can reliably identify / detect the highly probable presence of a defect in the first power semiconductor 12a. Consequently, cost-effective components, such as, in particular, the comparator 18, can be used as part of the device for reliably identifying / detecting defects in the first power semiconductor 12a.

[0023] Furthermore, the overvoltage detection device 18 is designed such that, as soon as the first voltage U1 exceeds a first voltage threshold, at least one first output signal can be outputted by means of the overvoltage detection device 18, by means of which at least one protection element 20 can be actuated. The actuation of the at least one protection element 20 by means of the at least one first output signal is effected such that the gate of the first power semiconductor 12a is short-circuited to the reference potential of the first power semiconductor 12a by means of the at least one actuated protection element 20, whereby the first voltage U1 present on the first conductor track 14a is reduced by means of the at least one actuated protection element 20.

[0024] After identifying / detecting a defect in the first power semiconductor 12a, the overvoltage detection device 18 can protect the gate driver 10 from undesirable consequences of the defect by short-circuiting the corresponding gate of the first power semiconductor 12a and reducing the first voltage U1 present on the first conductor track 14a by actuating at least one protective element 20. Both the short-circuiting of the gate of the first power semiconductor 12a and the early reduction of the first voltage U1 present on the first conductor track 14a ensure reliable protection of the gate driver 10 from damage or destruction due to overvoltage or fault current in the event of a defect in the first power semiconductor 12a.

[0025] Therefore, even if a defect exists in the first power semiconductor 12a, the gate driver 10 remains (almost) fully operational and can continue to reliably perform its tasks. In particular, despite a defect in the first power semiconductor 12a, the gate driver 10 can still perform safety-related tasks, such as ensuring electrical insulation and / or setting a safe system state. The advantageous interaction of the overvoltage detection device 18 with the at least one protective element 20 not only extends the service life of the gate driver 10 or the device equipped therewith, but also increases its functional capacity and expands its possible applications.

[0026] If the device includes at least one additional power semiconductor 12b in addition to the first power semiconductor 12a, and the total number Z of power semiconductors 12a and 12b in the device is greater than or equal to 2, then for 1<n≤Z, the overvoltage detection device 18 can also be electrically connected to the nth conductor track 14b and designed so that the nth voltage applied to the nth conductor track 14b can be tapped. In this case, the nth voltage can be compared / compared with the first voltage threshold value or the correspondingly assigned nth voltage threshold value by means of the overvoltage detection device 18. The nth voltage threshold value can also be predefined for the overvoltage detection device 18 or (fixedly) set on the overvoltage detection device 18. Thus, defects in the at least one additional power semiconductor 12b can also be detected / compared by means of the overvoltage detection device 18.

[0027] As soon as the nth voltage exceeds a first voltage threshold or a correspondingly assigned nth voltage threshold, at least one further output signal can be output, preferably by means of overvoltage detection device 18, by means of a single protective element 20 of the signal output device or at least one further protective element of the device, so that the gate of the nth power semiconductor 12b electrically connected to the nth conductor track 14b is short-circuited to the reference potential of the nth power semiconductor 12b by means of the at least activated protective element 20, thereby reducing the nth voltage present on the nth conductor track. Even in the case of a device equipped with at least two power semiconductors 12a and 12b, by means of advantageous actuation of at least one protective element 20, protection of the gate driver 10 can be maintained by short-circuiting the respective gates of the defective power semiconductors 12a and 12b and by reducing the voltage present on the respective conductor tracks, via which the defective power semiconductors 12a and 12b are electrically connected to the gate driver 10. In particular, even if the arrangement is equipped with at least two power semiconductors 12a and 12b, a single protective element 20 can be sufficient for protecting the gate driver 10. This makes reliable protection of the gate driver 10 possible even with miniaturized arrangements.

[0028] The first voltage threshold and / or at least one further voltage threshold are preferably higher than a supply voltage typically present in the first conductor track 14a and / or in the at least one further conductor track 14b. Furthermore, the first voltage threshold and / or at least one further voltage threshold are preferably lower than a destruction limit of the gate driver 10, i.e., lower than a destruction voltage that has a high probability of causing destruction / damage to at least one component of the gate driver 10. Consequently, the triggering threshold of the overvoltage detection device 18, at which the overvoltage detection device 18 outputs the at least one first output signal and / or the at least one further output signal, is defined such that a defect in the corresponding power semiconductor 12a or 12b can be reliably assumed, if necessary.

[0029] The at least one protection element 20 can be at least one gate driver-external protection element 20 and / or at least one gate driver-internal protection element (not shown). The "at least one protection element 20" can refer to a switching element by which the gate of a defective power semiconductor 12a or 12b can be short-circuited (to ground) and the applied voltage can be reduced on the corresponding conductor tracks 14a, 14b (via which the defective power semiconductor 12a or 12b is electrically connected to the gate driver 10). The "at least one protection element 20" can refer to a switching element with automatic latching or latching. For example, the at least one protection element 20 can include / be at least one thyristor 20 and / or at least one thyristor-like circuit element. The at least one thyristor 20 can be constructed as a single component or in a distributed manner from transistors. Alternatively, the at least one switching element of the gate driver 10 that is typically used to conventionally disconnect the correspondingly assigned power semiconductor 12a or 12b can also be used as the at least one gate driver-internal switching element. The at least one switching element of the gate driver 10 is usually not grounded, but connected to the negative supply. The gate driver 10 often has at least one switching element whose load capacity is sufficient for the sufficient duration of operation of the at least one switching element. Preferably, the at least one protective element 20 has a current carrying capacity that is so high that, in the event of a relatively high fault current (due to a defect in the corresponding power semiconductor 12 a or 12 b ), the voltage generated in the corresponding conductor track 14 a or 14 b is below the destruction limit of the gate driver 10 .

[0030] As a beneficial improvement plan, Figure 1The device also includes a first fuse 22a in the first conductor track 14a. The first fuse 22a can be disconnected / opened by a short-circuited gate of the first power semiconductor 12a. An additional fuse 22b can also be arranged in at least one additional conductor track 14b of the device such that the respective fuse 22b can be disconnected / opened by a short-circuit of the gate of the power semiconductor 12b electrically connected to the conductor track 14b equipped with the fuse. The respective fuse 22a or 22b can electrically disconnect the defective gate of an adjacent power semiconductor 12a or 12b from the gate driver 10, improving the protection of the gate driver 10 against high fault currents. The at least one fuse 22a or 22b of the device can be a conductor track fuse, a defined constriction in the respective conductor track 14a or 14b, or a surface-mounted device (SMD).

[0031] As another beneficial supplement, Figure 1 In the case of a device of this type, the first conductor track 14a is also electrically connected to the supply conductor track 26 of the gate driver 10 via a first connecting conductor track 24a. A first protection diode 28a is arranged in the first connecting conductor track 24a. Furthermore, at least one snubber capacitor 30 is electrically connected to the first connecting conductor track 24a. The connection of the first conductor track 14a to the supply conductor track 26 of the gate driver 10 via the first protection diode 28a and the at least one snubber capacitor 30 ensures reliable protection, particularly to prevent brief voltage peaks during the response time of the overvoltage detection device 18, during the response time of the at least one protection element 20, and / or when the fuse 22a opens. Even high fault currents can be dissipated relatively quickly via the first protection diode 28a (towards the positive and / or negative supply voltage Vcc).

[0032] At least one further conductor track 14b can also be connected through a respective further connecting conductor track 24b or a respective connecting conductor track 24b and at least one subsection of the first connecting conductor track 24a (see Figure 1 ) is electrically connected to the supply conductor track 26. An additional protection diode 28b can also be arranged in each of the at least one additional connecting conductor track 24b. Optionally, at least one buffer capacitor 30 can also be electrically connected to the at least one additional connecting conductor track 24b. This allows the advantages described above to be expanded for the at least one additional conductor track 14b as well.

[0033] The above-described device is well-suited for use in critical areas with regard to failure and / or malfunction of the gate driver 10, such as, for example, in the automotive sector, due to the improved protection of its gate driver 10 compared to the prior art. Figure 1 The device can be produced with little installation space and relatively cost-effectively. Figure 1 The device also does not require a large gate converter and a large coupling capacitor with high voltage resistance and high pulse load capability.

[0034] This also helps to improve Figure 1 Contribute to the usability of the device.

[0035] Figure 2 A flow chart is shown for explaining one specific embodiment of the method for producing a device having a gate driver and at least one connected first power semiconductor.

[0036] In method step S1 of the manufacturing method, at least one gate of a first power semiconductor is electrically connected to a first gate driver output of a gate driver via its first conductor track. It is also possible to electrically connect the gate of at least one additional power semiconductor to at least one additional gate driver output of the gate driver via an additional conductor track. Examples for the gate driver and the at least one power semiconductor have already been listed above.

[0037] In another method step S2, an overvoltage detection device of the device, electrically connected to at least a first conductor track, is designed such that a first voltage present on the first conductor track can be tapped by the overvoltage detection device and compared with a first voltage threshold value currently specified for or set in the overvoltage detection device. Furthermore, the overvoltage detection device is designed to output at least one first output signal by the overvoltage detection device as soon as the first voltage exceeds the first voltage threshold value, which can be used to actuate / control at least one protective element external to the gate driver and / or internal to the gate driver so that the gate of a first power semiconductor is short-circuited to a reference potential of the first power semiconductor by the at least one protective element actuated by the at least one first output signal, thereby reducing the first voltage present on the first conductor track. Reference is made to the above explanations regarding possible exemplary embodiments of the overvoltage detection device and the at least one protective element. As an advantageous refinement, the overvoltage detection device can also be designed to detect a corresponding fault in at least one other power semiconductor and to react accordingly.

[0038] Optionally, the manufacturing method also includes method step S3, in which a first fuse is arranged in the first conductor track, wherein the first fuse can be opened / opened by means of a short-circuited gate of the first power semiconductor. Accordingly, an additional fuse can also be arranged in each of the at least one additional conductor track. Examples of the at least one fuse have already been listed above.

[0039] Alternatively or additionally, in (optional) method step S4, the first conductor track can also be electrically connected to the supply conductor track of the gate driver via a first connecting conductor track, wherein a first protection diode and / or at least one buffer capacitor in the first connecting conductor track are electrically connected to the first connecting conductor track. Furthermore, at least one further conductor track can be electrically connected to the first connecting conductor track via a respective further protection diode.

[0040] The execution of the production method described here also provides the advantages listed above. In this case, its method steps S1 to S4 can be executed in any order, overlapping in time or simultaneously.

[0041] Figure 3 A flow chart is shown for explaining one specific embodiment of the method for operating an arrangement having a gate driver and at least one connected first power semiconductor.

[0042] In method step S10, a first voltage present on a first conductor track, via which the gate of the first power semiconductor is electrically connected to a first gate driver output of a gate driver, is compared with a predetermined first voltage threshold. The first voltage threshold can be predetermined in particular by means of a reference voltage. Thus, the first voltage threshold can also be varied by taking into account at least one current parameter.

[0043] As soon as the first voltage exceeds a first voltage threshold, at least one gate driver-external and / or gate driver-internal protective element is actuated in method step S11 by means of at least one first output signal such that the gate of the first power semiconductor is short-circuited to the reference potential of the first power semiconductor by means of the at least one protective element actuated by the at least one first output signal, thereby reducing the first voltage present on the first conductor track. The method described here thus ensures reliable protection of the gate driver even in the event of a defect in the first power semiconductor.

[0044] If the device further comprises at least one further power semiconductor, the gate of which is electrically connected to at least one further gate driver output of the gate driver via a further conductor track, further method steps corresponding to method steps S10 and S11 can additionally be performed.

Claims

1. A device comprising: A gate driver (10) having at least one first gate driver output (16a); and at least one first power semiconductor (12a) having a gate and a reference potential, wherein the gate of the first power semiconductor (12a) is electrically connected to a first gate driver output (16a) of the gate driver (10) via a first printed conductor (14a); Features an overvoltage detection device (18) which is electrically connected to at least the first conductor track (14a) and is designed such that a first voltage (U1) present on the first conductor track (14a) can be tapped by means of the overvoltage detection device (18) and the first voltage can be compared with a first voltage threshold value currently predefined for the overvoltage detection device (18) or set on the overvoltage detection device (18), and As long as the first voltage (U1) exceeds the first voltage threshold, at least one first output signal can be outputted by means of the overvoltage detection device (18), and at least one protection element (20) external to the gate driver and / or internal to the gate driver can be controlled by means of the first output signal so that the gate of the first power semiconductor (12a) is short-circuited to the reference potential of the first power semiconductor (12a) by means of the at least one protection element (20) controlled by the at least one first output signal, thereby reducing the first voltage (U1) applied to the first printed conductor (14a).

2. The device as claimed in claim 1, wherein a first fuse (22a) is arranged in the first conductor track (14a), the first fuse being able to be opened by means of a short-circuited gate of the first power semiconductor (12a).

3. A device according to claim 1 or 2, wherein the first printed conductor (14a) is electrically connected to the power supply printed conductor (26) of the gate driver (10) via a first connecting printed conductor (24a), and wherein a first protection diode (28a) is arranged in the first connecting printed conductor (24a) and / or at least one buffer capacitor (30) is electrically connected to the first connecting printed conductor (24a).

4. A device according to any of the preceding claims, wherein the gate of the first power semiconductor (12a) is short-circuited to the source connection or the emitter connection of the first power semiconductor (12a) as a reference potential of the first power semiconductor (12a) by means of a controlled protection element (20).

5. A device according to any one of the preceding claims, wherein the device comprises at least one additional power semiconductor (12b), the gate of which is electrically connected to at least one additional gate driver output (16b) of the gate driver (10) via each additional printed conductor (14b), and the total number Z of power semiconductors (12a, 12b) of the device is greater than or equal to 2, and wherein for 1<n≤Z, the overvoltage detection device (18) is additionally electrically connected to the nth printed conductor (14b) and is constructed in such a way that the nth voltage applied to the nth printed conductor (14b) can be tapped by means of the overvoltage detection device (18) and can be compared with the first voltage threshold or the correspondingly assigned and currently overvoltage threshold. The invention relates to a gate driver for detecting an overvoltage of a gate driver and a gate driver for detecting an overvoltage of a gate driver. The gate driver for detecting an overvoltage of a gate driver and a gate driver for detecting an overvoltage of a gate driver are compared with an nth voltage threshold value predetermined by an overvoltage detection means (18) or set on the overvoltage detection means (18), and as long as the nth voltage exceeds the first voltage threshold value or the correspondingly assigned nth voltage threshold value, at least one further output signal can be output by means of the overvoltage detection means (18), and at least one further protection element external to the gate driver and / or internal to the gate driver can be controlled by means of the output signal so that the gate of the nth power semiconductor (12b) electrically connected to the nth printed conductor (14b) is short-circuited to the reference potential of the nth power semiconductor (12b) by means of the at least one controlled further protection element, thereby correspondingly reducing the nth voltage applied to the nth printed conductor (14b).

6. A device according to any one of claims 1 to 4, wherein the device comprises at least one further power semiconductor (12b), the gate of which is electrically connected to at least one further gate driver output (16b) of the gate driver (10) via a respective further printed conductor (14b), and the total number Z of power semiconductors (12a, 12b) of the device is greater than or equal to 2, and wherein for 1<n≤Z, the overvoltage detection device (18) is additionally electrically connected to the nth printed conductor (14b) and is constructed in such a way that the nth voltage applied to the nth printed conductor (14b) can be tapped by means of the overvoltage detection device (18) and can be compared with the first voltage threshold or the corresponding tapped The invention relates to a device for detecting a power supply of a plurality of power semiconductors (12b) connected to an nth conductor track (14b) and a device for detecting a power supply of a plurality of power semiconductors (12b) connected to an nth conductor track (14b). The device for detecting a power supply of a plurality of power semiconductors (12b) connected to an nth conductor track (14b) is compared with an nth voltage threshold value which is currently predetermined by an overvoltage detection device (18) or is set on the overvoltage detection device (18), and as long as the nth voltage exceeds the first voltage threshold value or the correspondingly assigned nth voltage threshold value, the overvoltage detection device (18) can output at least one further output signal, by means of which a single protection element (20) of the device can be controlled in such a way that, by means of the controlled protection element (20), the gate of an nth power semiconductor (12b) electrically connected to an nth conductor track (14b) is short-circuited to a reference potential of the nth power semiconductor (12b), thereby correspondingly reducing the nth voltage applied to the nth conductor track (14b).

7. The device according to any of the preceding claims, wherein the at least one protection element (20) comprises at least one thyristor (20) and / or at least one thyristor-like circuit element.

8. A method for producing a device having a gate driver (10) and at least one connected first power semiconductor (12a), comprising the following steps: The gate of the first power semiconductor (12a) is electrically connected to a first gate driver output terminal (16a) of the gate driver (10) via a first printed conductor (14a) (S1); It is characterized by the following steps: An overvoltage detection device (18) (S2) of the device, which is electrically connected to at least a first conductor track (14a), is constructed in such a way that a first voltage (U1) applied to the first conductor track (14a) can be tapped by means of the overvoltage detection device (18) and the first voltage can be compared with a first voltage threshold value currently predetermined for the overvoltage detection device (18) or set on the overvoltage detection device (18), and As long as the first voltage (U1) exceeds the first voltage threshold, at least one first output signal can be output by means of the overvoltage detection device (18), and at least one protection element (20) external to the gate driver and / or internal to the gate driver can be controlled by means of the first output signal so that the gate of the first power semiconductor (12a) is short-circuited to the reference potential of the first power semiconductor (12a) by means of the at least one protection element (20) controlled by the at least one first output signal, thereby reducing the first voltage (U1) applied to the first conductor track (14a).

9. The production method according to claim 8, wherein a first fuse (22a) is arranged in the first conductor track (14a), the first fuse being able to be opened (S3) by means of a short-circuited gate of the first power semiconductor (12a).

10. A manufacturing method according to claim 8 or 9, wherein the first printed conductor (14a) is electrically connected to the power supply printed conductor (26) of the gate driver (10) via a first connecting printed conductor (24a), and wherein a first protection diode (28a) and / or at least one buffer capacitor (30) in the first connecting printed conductor (24a) are electrically connected to the first connecting printed conductor (24a) (S4).

11. A method for operating a device having a gate driver (10) and at least one connected first power semiconductor (12a), It is characterized by the following steps: A first voltage (U1) applied to a first printed conductor (14a) is compared with a predetermined first voltage threshold value (S10), wherein the gate of the first power semiconductor (12a) is electrically connected to a first gate driver output (16a) of the gate driver (10) via the first printed conductor; and As long as the first voltage (U1) exceeds the first voltage threshold, at least one protection element (20) external to the gate driver and / or internal to the gate driver is controlled by means of at least one first output signal so that the gate of the first power semiconductor (12a) is short-circuited to the reference potential of the first power semiconductor (12a) by means of at least one protection element (20) controlled by the at least one first output signal, thereby reducing the first voltage (U1) applied to the first conductor track (14a) (S11).

12. The method according to claim 11, wherein the reference voltage (U ref ) to predetermine the first voltage threshold.

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