A method of grinding an alloy target having a sputter face bevel

Abstract

The application relates to a grinding method of an alloy target material with a sputtering surface bevel; the grinding method comprises the following steps: sequentially performing outer circle grinding and bevel grinding on an alloy target material blank; the bevel grinding comprises sequentially performing rough grinding treatment, semi-fine grinding treatment and fine grinding treatment on the edge of the alloy target material after the outer circle grinding to remove a region to be ground and removed to obtain a sputtering surface bevel; the sputtering surface bevel angle is adjusted before the semi-fine grinding treatment; an alloy target material finished product with a sputtering surface bevel is obtained; the low flatness of the alloy target material finished product is ensured, meanwhile, the diameter deviation of the sputtering surface plane of the alloy target material finished product is low, is below 0.5 mm, and the occurrence of situations such as corner collapse, cracking and slag dropping is avoided, and the quality and stability of the alloy target material finished product are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor sputtering target material, in particular to a grinding method of alloy target material with sputtering surface bevel. BACKGROUND

[0002] In order to improve the stability and film quality in the sputtering process, the bevel structure can increase the adhesion surface area of the target material edge, so that the back sputtering material is more uniformly attached to the bevel, thereby preventing the problem of peeling caused by excessive local adhesion, and effectively reducing the abnormal discharge in the sputtering reactor, making the sputtering layer formed on the target blank more uniform, and improving the performance of semiconductor devices and other products. However, there are many difficulties in grinding the sputtering surface bevel, such as: the size of the sputtering surface bevel cannot be guaranteed, and the phenomena of corner collapse, slag dropping, etc. are prone to occur.

[0003] Especially for tungsten-silicon alloy target material, since it is welded from tungsten-silicon alloy target blank and copper substrate, the thinnest contact area of the target blank and the copper substrate at the outermost side of the bevel is close to a sharp corner during processing the sputtering surface bevel, and is prone to corner collapse and slag dropping during grinding, thereby causing the particle matter to exceed the standard during vacuum pumping in the sputtering process of the target material, resulting in the inability to use normally; at the same time, due to the hard and brittle characteristics of tungsten-silicon material, the tungsten-silicon alloy target blank and the copper substrate cannot be pressed and flattened after brazing, the flatness of the sputtering surface after welding cannot be guaranteed, and the diameter size of the sharp corner of the sputtering surface bevel is difficult to guarantee.

[0004] In order to guarantee the flatness of the sputtering surface, the existing processing method is generally grinding machine and wire cutting processing, which can achieve high size accuracy and small flatness for planar target blank, but for welded tungsten-silicon target blank with bevel, the grinding machine and wire cutting processing method cannot guarantee the size accuracy and low flatness of the sputtering surface bevel, and due to the large stress of the grinding machine, the target blank and the copper substrate are prone to debrazing, and the thin part of the target blank is prone to corner collapse.

[0005] Therefore, how to provide a grinding method that can guarantee high size accuracy and small flatness of tungsten-silicon alloy target material with bevel, and also avoid corner collapse and slag dropping, is a technical problem to be solved in the field at present. SUMMARY

[0006] To solve the above technical problems, the present application provides a grinding method of alloy target material with sputtering surface bevel, which guarantees the flatness of the alloy target material product, makes the diameter size of the sputtering surface of the alloy target material product more accurate, and avoids phenomena such as corner collapse, cracking and slag dropping, thereby providing an excellent grinding method for the manufacture of semiconductor sputtering target material.

[0007] To achieve this purpose, the present application adopts the following technical solutions:

[0008] The application provides a grinding method of an alloy target material with a sputtering surface bevel, which comprises the following steps:

[0009] The alloy target material blank is subjected to external grinding and bevel grinding in sequence; the bevel grinding comprises rough grinding treatment, semi-fine grinding treatment and fine grinding treatment on the edge of the alloy target material after the external grinding to remove a region to be ground and removed to obtain a sputtering surface bevel; the sputtering surface bevel angle is adjusted before the semi-fine grinding treatment; and an alloy target material finished product with a sputtering surface bevel is obtained.

[0010] In the grinding method, the bevel grinding is divided into three process stages of rough grinding treatment, semi-fine grinding treatment and fine grinding treatment, and the sputtering surface bevel angle is adjusted before the semi-fine grinding treatment, so that the flatness of the tungsten-silicon alloy target material finished product is ensured, the sputtering surface flat diameter deviation of the tungsten-silicon alloy target material finished product is reduced, and the phenomena of corner collapse, cracking and slag dropping are avoided.

[0011] It is worth noting that the grinding method is particularly suitable for tungsten-silicon alloy target materials, because the tungsten-silicon alloy target material is hard and brittle and needs to be designed with a sputtering surface bevel, so the sputtering surface diameter of the tungsten-silicon alloy target material finished product is particularly difficult to control, and the phenomena of corner collapse, cracking and slag dropping are prone to occur.

[0012] It is worth noting that the application aims to obtain an alloy target material with a sputtering surface bevel, in order to ensure the concentricity of the alloy target blank and the back plate of the alloy target material, the diameter of the alloy target blank is designed to be slightly larger than that of the back plate, and the external grinding is performed before the bevel grinding to make the alloy target blank and the back plate concentric and tangent to the maximum external circle, thereby improving the combination of the target blank and the back plate; then the edge sharp corner of the alloy target material after the external grinding is ground and removed, the initial planar sputtering target material is ground to a sputtering surface bevel, that is, bevel grinding, and finally an alloy target material with a sputtering surface bevel is obtained.

[0013] Preferably, the region to be ground and removed comprises a first region to be ground and removed and a second region to be ground and removed.

[0014] Preferably, the ratio of the outermost edge thickness of the region to be ground and removed to the thickness of the alloy target blank in the alloy target material blank is (0.5-0.8):1, for example, it can be 0.5:1, 0.55:1, 0.6:1, 0.65:1, 0.7:1, 0.75:1 or 0.8:1, etc.

[0015] The application further preferably has the ratio of the outermost edge thickness of the region to be ground and removed to the thickness of the alloy target blank in the alloy target material blank is (0.5-0.8):1, which aims to prevent the sputtering surface bevel of the alloy target material from being too thin after grinding to contact the back plate and the phenomena of corner collapse, slag dropping, etc.

[0016] Preferably, the grinding head of the grinding tool used in the external grinding comprises a tree-shaped diamond grinding head.

[0017] The present application further preferably uses a tree-shaped diamond grinding head in the external grinding, because the tree-shaped grinding head adopts a hollow design and six evenly distributed notches on the edge, which can better dissipate heat and remove chips during external grinding.

[0018] Preferably, the tool setting position of the external grinding is the maximum external circle position of the sputtering surface plane of the alloy target blank.

[0019] Preferably, the feed amount of the external grinding is 0.02-0.08mm, for example, it can be 0.02mm, 0.03mm, 0.04mm, 0.05mm, 0.06mm, 0.07mm or 0.08mm, etc.

[0020] The present application further preferably uses a tree-shaped diamond grinding head in the external grinding, because the tree-shaped grinding head adopts a hollow design and six evenly distributed notches on the edge, which can better dissipate heat and remove chips during external grinding.

[0021] Preferably, the first measurement of the sputtering surface flatness of the alloy target after the external grinding is performed before the bevel grinding to determine the sputtering surface bevel angle.

[0022] Preferably, the first measurement region of the first measurement is a circular ring region with a distance of 0-20mm from the maximum external circle position of the sputtering surface of the alloy target after the external grinding to the pre-obtained sputtering surface sharp corner close to the center straight line of the sputtering surface plane, for example, it can be 3mm, 5mm, 10mm, 12mm, 15mm, 18mm or 20mm, etc.

[0023] The pre-obtained sputtering surface sharp corner is the position where the sputtering surface bevel and the sputtering surface plane intersect in the finished alloy target with a sputtering surface bevel.

[0024] Preferably, the rough grinding process includes grinding to remove the first area to be ground.

[0025] Preferably, the ratio of the thickness of the outermost edge of the first area to be ground to the total thickness of the outermost edge of the area to be ground is (0.35-0.75):1, for example, it can be 0.35:1, 0.40:1, 0.45:1, 0.50:1, 0.55:1, 0.60:1, 0.65:1, 0.70:1 or 0.75:1.

[0026] The ratio of the thickness of the outermost edge of the first to-be-ground removal area to the total thickness of the outermost edge of the to-be-ground removal area is (0.35-0.75): 1, that is, the bevel grinding is carried out in two stages, and the rough grinding process only removes the first to-be-ground removal area, which is beneficial to subsequent further confirmation of flatness and adjustment of the angle of the sputtering surface bevel, so that the flatness error of the finished alloy target is low, and the quality of the target material is improved; on the other hand, it prevents the phenomenon of angle collapse and slagging at the position where the sputtering surface bevel of the target blank contacts the back plate caused by direct one-step removal.

[0027] Preferably, the grinding head of the grinding tool used in the rough grinding process comprises an umbrella-shaped diamond grinding head.

[0028] Preferably, the feed amount of the rough grinding process is 0.05-0.11 mm, for example, it can be 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm, 0.10 mm or 0.11 mm, etc.

[0029] The feed amount of the rough grinding process is preferably 0.05-0.11 mm, which is beneficial to achieving higher processing efficiency under the premise of ensuring grinding quality: if the feed amount of the rough grinding process is too low, the processing efficiency is low; if the feed amount of the rough grinding process is too high, the angle collapse and slagging occur.

[0030] Preferably, the first machining allowance of the sputtering surface bevel obtained after the rough grinding process is 0.5-1.0 mm, for example, it can be 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm or 1.0 mm, etc.

[0031] It is worth noting that the first machining allowance of the sputtering surface bevel obtained after the rough grinding process refers to the thickness of the sputtering surface bevel obtained after the rough grinding process to the sputtering surface bevel of the finished alloy target, which aims to timely adjust the angle of the sputtering surface bevel subsequently.

[0032] Preferably, the semi-finish grinding process comprises grinding and removing a second to-be-ground removal area.

[0033] Preferably, if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding process is greater than the theoretical diameter of the sputtering surface plane of the finished alloy target, the angle of the sputtering surface bevel is reduced.

[0034] Preferably, if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding process is less than the theoretical diameter of the sputtering surface plane of the finished alloy target, the angle of the sputtering surface bevel is increased.

[0035] Preferably, the sputtering surface flatness, sputtering surface flat diameter variation and sputtering surface bevel angle variation of the rough grinding processed alloy target material meet the following formula:

[0036]

[0037] Wherein, x is the sputtering surface flatness of the rough grinding processed alloy target material, in mm; y is the sputtering surface flat diameter variation of the rough grinding processed alloy target material, in mm; z is the sputtering surface bevel angle variation of the rough grinding processed alloy target material, in °.

[0038] Wherein, the sputtering surface flat diameter variation is the difference between the measured diameter of the sputtering surface flat of the rough grinding processed alloy target material and the theoretical diameter of the sputtering surface flat of the finished alloy target material; 15° in the formula is the initial sputtering surface bevel angle.

[0039] As shown in Figure 4 and Figure 5 , wherein A represents the theoretical position of the sputtering surface bevel of the finished alloy target material, B represents the actual position of the sputtering surface bevel of the finished alloy target material, d1 represents the theoretical diameter of the sputtering surface flat of the finished alloy target material, in mm; d2 represents the measured diameter of the sputtering surface flat of the finished alloy target material, in mm; then y = d2 - d1; x represents the flatness, i.e. the height difference between the actual sputtering surface flat and the ideal sputtering surface flat, in mm; α1 represents the theoretical sputtering surface bevel angle, in °; α2 represents the actual sputtering surface bevel angle, in °.

[0040] As shown in Figure 4 , if d2 > d1, the actual sputtering surface bevel angle α2 is adjusted smaller; as shown in Figure 5 , if d2 < d1, the actual sputtering surface bevel angle α2 is adjusted larger, and the angle size of the adjustment meets the above relationship.

[0041] The application further preferably selects to increase or decrease the sputtering surface bevel angle according to the size relationship between the measured diameter of the sputtering surface flat and the theoretical diameter of the sputtering surface flat during the semi-fine grinding processing, so as to make the flatness of the obtained finished alloy target material lower and improve the sputtering uniformity, thereby being beneficial to the quality of the subsequent semiconductor sputtered layer. In addition, the application simulates the sputtering surface flatness and the diameter variation of the sputtering surface flat by changing the diameter of the intersection point of the bevel when the sputtering surface flat is offset by 0.05-0.3 mm up and down through CAD software, obtains the relationship between the sputtering surface flatness and the sputtering surface bevel angle, and makes the size of the sputtering surface diameter of the alloy target material more accurate.

[0042] Preferably, the semi-fine grinding processing obtains a semi-finished alloy target material, and the second machining allowance of the sputtering surface bevel of the semi-finished alloy target material is 0.15-0.25 mm.

[0043] The present application reserves a machining allowance for the subsequent fine grinding process stage in the semi-fine grinding process stage, so that the workpiece is not scrapped when the subsequent machining precision has a problem.

[0044] Preferably, the grinding head of the grinding tool used in the semi-fine grinding process comprises an umbrella-shaped diamond grinding head.

[0045] The present application further preferably uses an umbrella-shaped diamond grinding head in the rough grinding process and the semi-fine grinding process, which is beneficial to increase the contact area of the grinding head and the inclined surface, thereby increasing the stress area during grinding and avoiding excessive local stress during grinding, which causes the product to collapse.

[0046] Preferably, the feed amount of the semi-fine grinding process is 0.03-0.08mm, for example, it can be 0.03mm, 0.04mm, 0.05mm, 0.06mm, 0.07mm or 0.08mm, etc.

[0047] The present application further preferably uses an umbrella-shaped diamond grinding head in the rough grinding process and the semi-fine grinding process, which is beneficial to increase the contact area of the grinding head and the inclined surface, thereby increasing the stress area during grinding and avoiding excessive local stress during grinding, which causes the product to collapse.

[0048] Preferably, the fine grinding process comprises grinding to remove the second machining allowance to obtain an alloy target material finished product with a sputtering surface inclined surface.

[0049] Preferably, the grinding head of the grinding tool used in the fine grinding process comprises a columnar diamond grinding head.

[0050] The present application further preferably uses a columnar diamond grinding head in the fine grinding process, which is beneficial to accurately control the grinding position, thereby accurately controlling the grinding angle and the grinding amount, and obtaining better surface grinding quality and surface roughness.

[0051] Preferably, the feed amount of the fine grinding process is 0.01-0.05mm, for example, it can be 0.01mm, 0.02mm, 0.03mm, 0.04mm or 0.05mm, etc.

[0052] As a further preferred technical solution of the present application, the grinding method comprises the following steps:

[0053] (1) The alloy target material blank is ground by an umbrella-shaped diamond grinding head, and the feed amount is 0.02-0.08mm; the tool setting position of the external grinding is the maximum external circle position of the sputtering surface plane of the alloy target material blank;

[0054] (2) performing a first measurement on the sputtering surface flatness of the alloy target material after the outer circle grinding of step (1) to determine the sputtering surface bevel angle; the first measurement region of the first measurement is a circular ring region of the sputtering surface of the alloy target material after the outer circle grinding from the maximum outer circle position of the sputtering surface to a distance of 0-20 mm from the sputtering surface tip angle to the center of the sputtering surface straight line;

[0055] Further grinding the outer circle ground alloy target material to remove the to-be-ground removal area to obtain a sputtering surface bevel; the ratio of the total thickness of the outermost edge of the to-be-ground removal area to the alloy target blank thickness in the alloy target blank is (0.5-0.8):1; the edge of the outer circle ground alloy target material is first treated by coarse grinding with an umbrella-shaped diamond grinding head to grind and remove a first to-be-ground removal area, and the feed rate is 0.05-0.11 mm; the ratio of the thickness of the outermost edge of the first to-be-ground removal area to the total thickness of the outermost edge of the to-be-ground removal area is (0.35-0.75):1; the first processing allowance of the sputtering surface bevel obtained after the coarse grinding treatment is 0.5-1.0 mm;

[0056] If the measured diameter of the sputtering surface plane of the alloy target material after the coarse grinding treatment is greater than the theoretical diameter of the sputtering surface plane of the finished alloy target material, the sputtering surface bevel angle is reduced; if the measured diameter of the sputtering surface plane of the alloy target material after the coarse grinding treatment is less than the theoretical diameter of the sputtering surface plane of the finished alloy target material, the sputtering surface bevel angle is increased; and the adjustment is made according to the following formula:

[0057]

[0058] Wherein, x is the sputtering surface flatness of the alloy target material after the coarse grinding treatment, with a unit of mm; y is the sputtering surface plane diameter change of the alloy target material after the coarse grinding treatment, with a unit of mm; z is the sputtering surface bevel angle change of the alloy target material after the coarse grinding treatment, with a unit of °; x is obtained by a second measurement on the sputtering surface flatness of the alloy target material after the coarse grinding treatment; the second measurement region of the second measurement is a circular ring region of the sputtering surface plane of the alloy target material after the coarse grinding treatment from the maximum outer circle position of the sputtering surface plane to a distance of 2-15 mm from the center of the sputtering surface plane straight line, for example, it can be 2 mm, 4 mm, 6 mm, 8 mm, 10 mm, 12 mm or 15 mm, etc.;

[0059] Further, the umbrella-shaped diamond grinding head is used to perform semi-fine grinding treatment on the alloy target material after the coarse grinding treatment according to the adjusted sputtering surface bevel angle to grind and remove a second to-be-ground removal area, and the feed rate is 0.03-0.08 mm, to obtain a semi-finished alloy target material, and the second processing allowance of the sputtering surface bevel of the semi-finished alloy target material is 0.15-0.25 mm;

[0060] (3) The second machining allowance of the sputtering surface bevel of the semi-finished alloy target material in step (2) is subjected to fine grinding treatment by a cylindrical diamond grinding head, and the feed amount is 0.01-0.05 mm, so as to obtain the alloy target material finished product with a sputtering surface bevel.

[0061] Compared with the prior art, the present application has at least the following beneficial effects:

[0062] (1) The grinding method of the alloy target material with a sputtering surface bevel provided by the present application divides the bevel grinding treatment into three process stages of coarse grinding treatment, semi-fine grinding treatment and fine grinding treatment, and adjusts the sputtering surface bevel angle before the semi-fine grinding treatment, so as to ensure a lower flatness of the alloy target material finished product, and at the same time, make the diameter deviation of the sputtering surface plane of the alloy target material finished product lower, reduce the occurrence of situations such as bevel collapse, cracking and slag dropping, and improve the quality and stability of the alloy target material finished product.

[0063] (2) The grinding method of the alloy target material with a sputtering surface bevel provided by the present application further reduces the diameter deviation of the sputtering surface plane of the alloy target material finished product by further adjusting the process parameters such as the shape and feed amount of the grinding head and the grinding thickness of each process stage, and the diameter deviation is preferably less than 0.5 mm, which further avoids the occurrence of situations such as bevel collapse, cracking and slag dropping, and provides a target material grinding method with great application potential for the field of semiconductor sputtering targets. BRIEF DESCRIPTION OF DRAWINGS

[0064] Figure 1 is a front view structural schematic diagram of the tungsten-silicon alloy target material blank in the grinding method of the present application embodiment 1;

[0065] Figure 2 is an enlarged view of the tungsten-silicon alloy target material Z after the coarse grinding treatment in the grinding method of the present application embodiment 1, and the magnification is 4 times;

[0066] Figure 3 is an enlarged view of the tungsten-silicon alloy target material Z after the semi-fine grinding treatment in the grinding method of the present application embodiment 1, and the magnification is 3 times;

[0067] Figure 4 is a schematic diagram of the angle adjustment in the semi-fine grinding treatment process in the grinding method of the present application;

[0068] Figure 5 is a schematic diagram of the angle adjustment in the semi-fine grinding treatment process in the grinding method of the present application;

[0069] In the figure: 1, tungsten-silicon alloy target blank; 2, back plate; 3, first measurement area; 4, first area to be ground and removed; 5, second area to be ground and removed; 7, second measurement area; 8, second machining allowance. DETAILED DESCRIPTION

[0070] The technical solutions of the present application are further illustrated in the following detailed description in conjunction with the accompanying drawings. However, the following examples are only simple examples of the present application and do not represent or limit the protection scope of the present application, and the protection scope of the present application is subject to the claims.

[0071] The initial sputtering surface bevel angle in the following examples and comparative examples is 15°.

[0072] I. Examples

[0073] Example 1

[0074] The present example provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, as shown in Figures 1-3 The grinding method comprises the following steps:

[0075] (1) The cylindrical grinding of the tungsten-silicon alloy target material blank is performed by using a tree-shaped diamond grinding head, and the feed rate is 0.05 mm; the tool setting position of the cylindrical grinding is the maximum cylindrical position of the sputtering surface plane of the tungsten-silicon alloy target material blank; the tungsten-silicon alloy target material blank comprises a tungsten-silicon alloy target blank 1 and a back plate 2;

[0076] (2) The first measurement of the sputtering surface flatness of the tungsten-silicon alloy target material after the cylindrical grinding in step (1) is performed to determine the sputtering surface bevel angle; the first measurement area 3 of the first measurement is a circular ring area with a distance of 20 mm from the maximum cylindrical position of the sputtering surface of the tungsten-silicon alloy target material after the cylindrical grinding to the sputtering surface sharp corner close to the center straight line of the sputtering surface plane;

[0077] The bevel grinding of the tungsten-silicon alloy target material after the cylindrical grinding is performed to remove the to-be-ground-removed area to obtain the sputtering surface bevel; the ratio of the total thickness of the outermost edge of the to-be-ground-removed area to the thickness of the tungsten-silicon alloy target blank 1 in the tungsten-silicon alloy target material blank is 0.7:1; the edge of the tungsten-silicon alloy target material after the cylindrical grinding is first coarsely ground by using an umbrella-shaped diamond grinding head to grind and remove a first to-be-ground-removed area 4, and the feed rate is 0.08 mm; the ratio of the thickness of the outermost edge of the first to-be-ground-removed area 4 to the total thickness of the outermost edge of the to-be-ground-removed area is 0.5:1; the first machining allowance 5 of the sputtering surface bevel obtained after the coarse grinding is 0.2 mm;

[0078] The second measurement of the flatness of the tungsten-silicon alloy target material after the coarse grinding is performed to obtain x=0.25 mm; the second measurement area 7 of the second measurement is a circular ring area with a distance of 10 mm from the maximum cylindrical position of the sputtering surface plane of the alloy target material after the coarse grinding to the center straight line of the sputtering surface plane;

[0079] Since the measured diameter (D408.564mm) of the sputtering surface plane of the rough grinding processed tungsten-silicon alloy target material is greater than the theoretical diameter (D406.600mm) of the sputtering surface plane of the finished alloy target material, the sputtering surface bevel angle is reduced by 0.72° (i.e. the adjusted sputtering surface bevel angle is 14.28°);

[0080] The remaining to-be-ground-removed area of the rough grinding processed tungsten-silicon alloy target material is subjected to semi-fine grinding processing by using an umbrella-shaped diamond grinding head according to the above adjusted sputtering surface bevel angle to grind and remove the second to-be-ground-removed area 6, and the feed rate is 0.05mm, thereby obtaining a semi-finished tungsten-silicon alloy target material, and the second machining allowance 8 of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material is 0.20mm;

[0081] (3) The second machining allowance 8 of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material in step (2) is subjected to fine grinding processing by using a columnar diamond grinding head, and the feed rate is 0.03mm, thereby obtaining a finished tungsten-silicon alloy target material with a sputtering surface bevel.

[0082] Example 2

[0083] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, and the grinding method comprises the following steps:

[0084] (1) The tungsten-silicon alloy target material blank is subjected to external circle grinding by using a tree-shaped diamond grinding head, and the feed rate is 0.02mm; the tool setting position of the external circle grinding is the maximum external circle position of the sputtering surface plane of the tungsten-silicon alloy target material blank;

[0085] (2) The sputtering surface flatness of the tungsten-silicon alloy target material after the external circle grinding in step (1) is subjected to first measurement to determine the sputtering surface bevel angle; the first measurement area of the first measurement is a circular ring area with a distance of 15mm from the maximum external circle position of the sputtering surface of the tungsten-silicon alloy target material after the external circle grinding to the pre-obtained sputtering surface acute angle close to the center straight line of the sputtering surface plane;

[0086] The tungsten-silicon alloy target material after the external circle grinding is subjected to bevel grinding to remove a to-be-ground-removed area to obtain a sputtering surface bevel; the ratio of the total thickness of the outermost edge of the to-be-ground-removed area to the thickness of the tungsten-silicon alloy target blank in the tungsten-silicon alloy target material blank is 0.5:1; the edge of the tungsten-silicon alloy target material after the external circle grinding is subjected to rough grinding processing by using an umbrella-shaped diamond grinding head to grind and remove a first to-be-ground-removed area, and the feed rate is 0.05mm; the ratio of the thickness of the outermost edge of the first to-be-ground-removed area to the total thickness of the outermost edge of the to-be-ground-removed area is 0.35:1; the first machining allowance of the sputtering surface bevel obtained after the rough grinding processing is 0.25mm;

[0087] The flatness of the tungsten-silicon alloy target material after the rough grinding treatment is measured for a second time, and the flatness is 0.2 mm; the second measurement area of the second measurement is a circular ring area with a linear distance of 8 mm from the maximum outer circle position of the sputtering surface plane of the alloy target material after the rough grinding treatment to the center of the sputtering surface plane;

[0088] Since the measured diameter (D405.164 mm) of the sputtering surface plane of the tungsten-silicon alloy target material after the rough grinding treatment is smaller than the theoretical diameter (D406.600 mm) of the sputtering surface plane of the finished alloy target material, the sputtering surface bevel angle is increased by 0.57° (i.e., the adjusted sputtering surface bevel angle is 15.57°);

[0089] The tungsten-silicon alloy target material after the rough grinding treatment is subjected to semi-fine grinding treatment using an umbrella-shaped diamond grinding head according to the adjusted sputtering surface bevel angle to remove the second area to be removed, and the feed rate is 0.03 mm, thereby obtaining a semi-finished tungsten-silicon alloy target material, and the second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material is 0.25 mm;

[0090] (3) The second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material in step (2) is subjected to fine grinding treatment using a columnar diamond grinding head, and the feed rate is 0.01 mm, thereby obtaining a tungsten-silicon alloy target material finished product with a sputtering surface bevel.

[0091] Example 3

[0092] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, and the grinding method comprises the following steps:

[0093] (1) The tungsten-silicon alloy target material blank is subjected to outer circle grinding using a tree-shaped diamond grinding head, and the feed rate is 0.08 mm; the tool setting position of the outer circle grinding is the maximum outer circle position of the sputtering surface plane of the tungsten-silicon alloy target material blank;

[0094] (2) The flatness of the sputtering surface plane of the tungsten-silicon alloy target material after the outer circle grinding in step (1) is measured for a first time to determine the sputtering surface bevel angle; the first measurement area of the first measurement is a circular ring area with a linear distance of 18 mm from the maximum outer circle position of the sputtering surface of the tungsten-silicon alloy target material after the outer circle grinding to the center of the sputtering surface;

[0095] The outer circle ground tungsten-silicon alloy target is subjected to bevel grinding to remove the to-be-ground removal area to obtain a sputtering surface bevel; the ratio of the total thickness of the outermost edge of the to-be-ground removal area to the thickness of the tungsten-silicon alloy target blank in the tungsten-silicon alloy target blank is 0.8:1; the edge of the outer circle ground tungsten-silicon alloy target is subjected to coarse grinding treatment by using an umbrella-shaped diamond grinding head to grind and remove a first to-be-ground removal area, and the feed rate is 0.11 mm; the ratio of the thickness of the outermost edge of the first to-be-ground removal area to the total thickness of the outermost edge of the to-be-ground removal area is 0.75:1; and the first machining allowance of the sputtering surface bevel obtained after the coarse grinding treatment is 0.15 mm.

[0096] The flatness of the tungsten-silicon alloy target after the coarse grinding treatment is subjected to second measurement, and the flatness is 0.15 mm; the second measurement area of the second measurement is a circular ring area with a linear distance of 12 mm from the maximum outer circle position of the sputtering surface plane of the tungsten-silicon alloy target after the coarse grinding treatment to the center of the sputtering surface plane.

[0097] Since the measured diameter (D407.754 mm) of the sputtering surface plane of the tungsten-silicon alloy target after the coarse grinding treatment is greater than the theoretical diameter (406.600 mm) of the sputtering surface plane of the finished alloy target, the sputtering surface bevel angle is reduced by 0.43° (i.e., the sputtering surface bevel angle after adjustment is 14.57°);

[0098] The tungsten-silicon alloy target after the coarse grinding treatment is subjected to semi-fine grinding treatment by using an umbrella-shaped diamond grinding head according to the above adjusted sputtering surface bevel angle to grind and remove a second to-be-ground removal area, and the feed rate is 0.08 mm, to obtain a semi-finished tungsten-silicon alloy target, and the second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target is 0.15 mm.

[0099] (3) The second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target in step (2) is subjected to fine grinding treatment by using a columnar diamond grinding head, and the feed rate is 0.05 mm, to obtain a finished tungsten-silicon alloy target with a sputtering surface bevel.

[0100] Example 4

[0101] The embodiment provides a grinding method of a tungsten-silicon alloy target with a sputtering surface bevel, wherein the ratio of the total thickness of the outermost edge of the to-be-ground removal area to the thickness of the alloy target blank in the alloy target blank in step (2) is 1:1, and the rest is the same as in example 1.

[0102] Example 5

[0103] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the feed amount of the rough grinding treatment in the step (2) is 0.03 mm.

[0104] Embodiment 6

[0105] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the feed amount of the rough grinding treatment in the step (2) is 0.03 mm.

[0106] Embodiment 7

[0107] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the ratio of the thickness of the outermost edge of the first area to be ground to the total thickness of the outermost edge of the area to be ground in the step (2) is 0.9:1.

[0108] Embodiment 8

[0109] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the feed amount of the semi-finish grinding treatment in the step (2) is 0.1 mm.

[0110] Embodiment 9

[0111] The embodiment provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the feed amount of the semi-finish grinding treatment in the step (2) is 0.01 mm.

[0112] II. Comparative Examples

[0113] Comparative Example 1

[0114] The comparative example provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the bevel grinding is performed once according to the theoretical size.

[0115] Comparative Example 2

[0116] The comparative example provides a grinding method of a tungsten-silicon alloy target material with a sputtering surface bevel, which is the same as that in the embodiment 1 except that the bevel angle of the sputtering surface is not adjusted before the semi-finish grinding treatment in the step (2), but is directly ground according to the sputtering surface plane angle before the rough grinding treatment.

[0117] III. Test and Results

[0118] The diameter deviation of the sputtering surface of the tungsten-silicon alloy target product obtained in the above examples and comparative examples was calculated by comparing the sputtering surface diameter with the theoretical sputtering surface diameter, and the appearance morphology was observed to see whether the corner collapse and slagging occurred or not, and the results are shown in Table 1.

[0119] Table 1

[0120]

[0121]

[0122] It can be seen from Table 1 that:

[0123] (1) It can be seen from Examples 1 to 3 that the grinding method of the alloy target material with a sputtering surface bevel provided by the application, especially for the tungsten-silicon alloy target material, by dividing the bevel grinding process into stages and timely adjusting the sputtering surface bevel angle, selecting appropriate feed amount in each processing stage, etc., the diameter deviation of the sputtering surface of the tungsten-silicon alloy target product is as low as 0.5 mm or less, and the corner collapse and slagging phenomena are avoided.

[0124] (2) It can be seen from Examples 1 and 4 and 7 that the tungsten-silicon alloy target product obtained in Examples 4 and 7 has serious corner collapse, cracking and slagging phenomena, and the diameter deviation of the sputtering surface is large; thus, it is further preferred that the ratio of the total thickness of the outermost edge of the to-be-ground removal area to the thickness of the alloy target blank in the alloy target blank is (0.5-0.8):1, and the ratio of the thickness of the outermost edge of the ground removal part in the rough grinding process to the total thickness of the outermost edge of the to-be-ground removal area is (0.35-0.75):1; which can prevent the contact position of the sputtering surface bevel and the back plate from being too thin to cause corner collapse, cracking and slagging phenomena, and further reduce the diameter deviation of the sputtering surface.

[0125] (3) It can be seen from Examples 1 and 5-6 that the diameter deviation of the tungsten-silicon alloy target product obtained in Example 5 is large, which is 1.12 mm, the surface is rough, and the corner collapse and slagging occur; the diameter deviation of the tungsten-silicon alloy target product obtained in Example 6 is small, which is 0.43 mm, the surface is smooth, no corner collapse and no slagging occur, but the processing efficiency is greatly reduced by 166%; thus, it is further preferred that the feed amount of the rough grinding process is 0.05-0.11 mm, which further reduces the diameter deviation of the obtained tungsten-silicon alloy target product and avoids the corner collapse, cracking and slagging phenomena.

[0126] (4) From the combination of Example 1 and Examples 8-9, it can be seen that the diameter deviation of the tungsten-silicon alloy target product obtained in Example 8 is large, being 0.75 mm, and the appearance surface is rough, with broken corners and slag dropping; the diameter deviation of the tungsten-silicon alloy target product obtained in Example 9 is small, being 0.43 mm, and the appearance surface is smooth, without broken corners and slag dropping, but the processing efficiency is reduced by 400%; thus, it is further preferred in the present application that the feeding amount of the semi-finishing treatment is 0.03-0.08 mm, further improving the quality and stability of the obtained tungsten-silicon alloy target product.

[0127] (5) From the combination of Example 1 and Comparative Examples 1 and 2, it can be seen that, in Comparative Example 1, the grinding method only performs the bevel grinding once according to the theoretical size, resulting in a too large diameter deviation of the obtained tungsten-silicon alloy target product, and the appearance has broken corners and the like, and the scrap rate is increased; in Comparative Example 2, the grinding method does not adjust the bevel angle of the sputtering surface before the semi-finishing treatment in step (2), resulting in that the flatness of the semi-finished tungsten-silicon alloy target product cannot be guaranteed, and the diameter deviation is too large, and the appearance is prone to have broken corners and the like; thus, it is shown that, in the grinding method of the present application, the bevel grinding treatment is divided into three stages of coarse grinding, semi-finishing and finishing, and the bevel angle of the sputtering surface is adjusted before the semi-finishing treatment, guaranteeing the flatness of the tungsten-silicon alloy target product and its diameter deviation and appearance.

[0128] The applicant declares that the above description is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and it should be understood by those skilled in the art that any changes or replacements within the technical scope disclosed by the present application can be easily thought of by those skilled in the art, and all fall within the protection scope and disclosure scope of the present application.

Claims

1. A grinding method of an alloy target having a sputtering surface inclined surface, characterized by, The grinding method comprises the following steps: The alloy target blank is subjected to outer circle grinding and bevel grinding in sequence; the bevel grinding comprises rough grinding treatment, semi-fine grinding treatment and fine grinding treatment on the edge of the alloy target after the outer circle grinding to remove a region to be ground and removed to obtain a sputtering surface bevel; the sputtering surface bevel angle is adjusted before the semi-fine grinding treatment; an alloy target finished product with a sputtering surface bevel is obtained; The region to be ground and removed comprises a first region to be ground and removed and a second region to be ground and removed; the ratio of the total thickness of the outermost edge of the region to be ground and removed to the thickness of the alloy target blank in the alloy target blank is (0.5-0.8):1; The tool setting position of the outer circle grinding is the maximum outer circle position of the sputtering surface plane of the alloy target blank; The sputtering surface flatness of the alloy target after the outer circle grinding is measured first before the bevel grinding to determine the sputtering surface bevel angle; the first measurement region of the first measurement is a circular ring region with a distance of 0-20mm from the maximum outer circle position of the sputtering surface of the alloy target after the outer circle grinding to the pre-obtained sputtering surface sharp angle close to the center straight line of the sputtering surface plane; The rough grinding treatment comprises grinding and removing the first region to be ground and removed; the ratio of the thickness of the outermost edge of the first region to be ground and removed to the total thickness of the outermost edge of the region to be ground and removed is (0.35-0.75):1; the feed amount of the rough grinding treatment is 0.05-0.11mm; the first machining allowance of the sputtering surface bevel obtained after the rough grinding treatment is 0.5-1.0mm; The semi-fine grinding treatment comprises grinding and removing the second region to be ground and removed; if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding treatment is greater than the theoretical diameter of the sputtering surface plane of the alloy target finished product, the sputtering surface bevel angle is reduced; if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding treatment is less than the theoretical diameter of the sputtering surface plane of the alloy target finished product, the sputtering surface bevel angle is increased.

2. The grinding method according to claim 1, characterized in that, The grinding head of the grinding tool used in the outer circle grinding comprises a tree-shaped diamond grinding head.

3. The grinding method according to claim 1, characterized in that, The feed amount of the outer circle grinding is 0.02-0.08mm.

4. The grinding method according to claim 1, characterized by The grinding head of the grinding tool used in the rough grinding treatment comprises an umbrella-shaped diamond grinding head.

5. The grinding method according to claim 1, characterized in that, The sputtering surface flatness, sputtering surface plane diameter change and sputtering surface bevel angle change of the alloy target after the rough grinding treatment meet the following formula: ； Wherein, x is the sputtering surface flatness of the alloy target after the rough grinding treatment, unit: mm; y is the sputtering surface plane diameter change of the alloy target after the rough grinding treatment, unit: mm; z is the sputtering surface bevel angle change of the alloy target after the rough grinding treatment, unit: °.

6. The grinding method according to claim 1, characterized by A semi-finished alloy target is obtained after the semi-fine grinding treatment, and the second machining allowance of the sputtering surface bevel of the semi-finished alloy target is 0.15-0.25mm.

7. The grinding method according to claim 1, characterized by The grinding head of the grinding tool used in the semi-fine grinding treatment comprises an umbrella-shaped diamond grinding head.

8. The grinding method according to claim 1, characterized by The feed amount of the semi-fine grinding treatment is 0.03-0.08mm.

9. The grinding method according to claim 6, characterized in that, The fine grinding process includes grinding to remove a second processing allowance of the sputtering surface bevel of the semi-finished alloy target material to obtain an alloy target material finished product with a sputtering surface bevel.

10. The grinding method according to claim 1, characterized by, The grinding head of the grinding tool used in the fine grinding process includes a cylindrical diamond grinding head.

11. The grinding method according to claim 1, characterized in that, The feed amount of the fine grinding process is 0.01-0.05 mm.

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