Deposition system for chemical vapor deposition silicon carbide ring production

Abstract

The invention discloses a deposition system for chemical vapor deposition silicon carbide ring production, and relates to the field of high-end equipment manufacturing. The deposition system for producing the chemical vapor deposition silicon carbide ring comprises a furnace body, wherein a reaction chamber and a heating module are arranged in the furnace body; the plurality of spray head groups are connected with gas pipelines; the graphite support is installed at the inner bottom of the bottom cover, the graphite support is used for supporting the annular single crystal substrate, and the graphite support is detachable; the stabilizing mechanism comprises a lifting seat, the supporting arm is fixed to the lifting seat, and the clamping assembly is installed on the supporting arm; the device comprises a furnace body, a nozzle group, a conveying mechanism and a lifting mechanism, and is characterized in that gas containing silicon and carbon is sprayed into the furnace body through the nozzle group, so that the gas containing silicon and carbon can be quickly and uniformly dispersed into a reaction chamber in the furnace body, and the deposition rate and uniformity of silicon carbide on an annular single crystal substrate are ensured; the detachable graphite support is formed by combining a plurality of splicing columns, horizontal supporting rods and clamping needles, and the influence of the graphite support on airflow is reduced by adjusting the number of the splicing columns.

Description

Technical Field

[0001] The present invention relates to the technical field of high-end equipment manufacturing, and in particular to a deposition system for producing chemical vapor deposition silicon carbide rings. Background Art

[0002] As a third-generation semiconductor material, silicon carbide has excellent heat resistance, corrosion resistance, oxidation resistance and thermal shock resistance. It is a material with broad application prospects in high-temperature semiconductors, high-temperature structural materials and semiconductor components. As for sintered silicon carbide, a high temperature of more than 2000°C is generally required in the manufacturing process, and due to the presence of sintering additives and pores, it has the disadvantage of low purity; while silicon carbide manufactured by chemical vapor deposition (chemical vapor deposition SiC, CVD-SiC) uses a gas containing silicon (Si) and carbon (C), and is relatively heated at about 1200 to 1500°C, which reduces the required temperature. Since solid silicon carbide is formed on a single crystal substrate using gas at the bottoming temperature, it has the advantages of being dense and high in purity. The existing chemical vapor deposition system for epitaxial growth of silicon carbide basically injects a source containing Si and C into a reactor with a heating function, and places a single crystal substrate into the reactor through a graphite bracket, and finally grows an epitaxial layer through a chemical reaction on the surface of the single crystal substrate.

[0003] However, when placing single crystal substrates, due to the limited space inside the equipment, if the single crystal substrates are stacked too densely, the gas containing silicon and carbon in the reactor will not flow smoothly. If the single crystal substrates are stacked too few, the gas flow rate in the reactor will be too fast. Therefore, the above situation is likely to have a significant impact on the production efficiency and quality of chemical vapor deposited silicon carbide solids. In addition, since the single crystal substrates are thin, it is difficult to maintain the stability of the single crystal substrate while reducing the volume of the graphite bracket. Summary of the invention

[0004] The technical problem to be solved by the present invention is: in order to solve the problem that the graphite support and the single crystal substrate easily affect the flow of the gas containing silicon and carbon in the reactor, the present invention provides a deposition system for the production of chemical vapor deposition silicon carbide rings to solve the above problem.

[0005] The technical solution adopted by the present invention to solve its technical problem is: A deposition system for producing chemical vapor deposition silicon carbide rings, comprising a furnace body, wherein the furnace body has a reaction chamber, and the furnace body is also provided with a heating module for providing heat energy to the reaction chamber; a nozzle group, wherein the nozzle group is provided with a plurality of nozzle groups, the plurality of nozzle groups pass through the furnace body and are fixed on the side wall of the furnace body, and the plurality of nozzle groups are connected to a gas pipeline, and the gas pipeline conveys gas into the reaction chamber through the nozzle group; a bottom cover, wherein the bottom cover is used to seal the bottom of the furnace body; a plurality of graphite brackets and a plurality of annular single crystal substrates, wherein the graphite brackets are installed on the inner bottom of the bottom cover, and the graphite brackets are used to Supporting the annular single crystal substrate, the graphite support is detachable. When the bottom cover is connected to the furnace body, the graphite support and the annular single crystal substrate are both located in the reaction chamber; a stabilizing mechanism, the stabilizing mechanism includes a lifting seat, a support arm and a clamping assembly, the support arm is fixed on the lifting seat, and the clamping assembly is installed on the support arm. When assembling the graphite support, the clamping assembly is driven up and down by the lifting seat to support different parts of the graphite support; a conveying mechanism and a lifting mechanism, the conveying mechanism is used to transport the bottom cover to the bottom of the furnace body, and the lifting mechanism is used to lift the bottom cover to engage with the bottom of the furnace body.

[0006] Preferably, there are four nozzle groups, which are arranged at equal intervals along the circumferential direction of the furnace body, each of the nozzle groups includes a plurality of nozzles, and the plurality of nozzles are fixed on the side wall of the furnace body at equal intervals from top to bottom.

[0007] Preferably, the graphite bracket includes a support column, an assembling column and a plug-in shaft, the support column is fixed to the inner bottom of the bottom cover, the tops of the support column and the assembling column are provided with latching protrusions, the bottom of the assembling column is provided with a latching groove, the latching protrusion can be engaged with the latching groove, a plurality of the assembling columns are stacked in sequence on the top of the support column, the plug-in shaft is plugged into the center of the assembling column for connecting the support column and a plurality of assembling columns, three horizontal support rods arranged at equal intervals are fixed on the circumferential surface of each of the assembling columns, a vertically upward latching pin is fixed at the end of each of the horizontal support rods, and the annular single crystal substrate is placed on the top of the latching pin.

[0008] Preferably, the clamping assembly includes an inner gear ring, an outer gear ring, a gear ring bracket, a gear set, multiple fixed shafts and multiple chucks, the inner ring of the inner gear ring and the outer ring of the outer gear ring are respectively meshed with the gear set, the gear set can drive the inner gear ring and the outer gear ring to rotate in opposite directions, the bottoms of the inner gear ring and the outer gear ring are rotatably mounted on the top of the gear ring bracket, multiple chucks are rotatably mounted on the fixed shaft, the fixed shaft is fixed to the bottom of the gear ring bracket through a connecting block, the front ends of the multiple chucks are all facing the graphite bracket, the inner gear ring and the outer gear ring are used to drive the chucks to clamp or loosen the graphite bracket.

[0009] Preferably, the chuck also includes a first jaw and a second jaw, the middle sections of the first jaw and the second jaw are cross-arranged and are rotatably connected to the fixed shaft at the intersection, the tail end of the first jaw and the tail end of the second jaw are both provided with waist-shaped holes, a first sliding column is arranged in the waist-shaped hole at the tail end of the first jaw, the bottom of the first sliding column is fixedly connected to the upper surface of the outer tooth ring through a connecting plate, a second sliding column is arranged in the waist-shaped hole at the tail end of the second jaw, the bottom of the second sliding column is fixedly connected to the upper surface of the inner tooth ring.

[0010] Preferably, the gear set includes a gear seat, a driving gear and two driven gears, the driving gear and the two driven gears are rotatably mounted side by side on the gear seat, the gear seat is fixed to the bottom of the gear ring bracket, the two driven gears are located on both sides of the driving gear, so that the two driven gears can be driven by the driving gear to rotate in opposite directions, the two driven gears are respectively meshed with the inner side of the inner gear ring and the outer side of the outer gear ring, and the driving wheel is driven to rotate by a servo motor.

[0011] Preferably, the conveying mechanism comprises a track, a platform vehicle and a fixing frame, the bottom cover is mounted on the platform vehicle via the fixing frame, and the track is laid under the platform vehicle and extends to the bottom of the lifting mechanism.

[0012] Preferably, the lifting mechanism includes a supporting frame, a bottom bracket, a supporting bracket, a guide rail and a screw rod, the furnace body is fixed on the top of the supporting frame, an ascending channel is formed in the center of the supporting frame, the bottom bracket is fixed on both sides of the track and is higher than the track, the upper end of the guide rail is fixedly connected to the top of the support frame, the lower end of the guide rail is fixedly connected to the bottom bracket, the supporting bracket is slidably mounted on the guide rail, the screw rod is threadedly connected to the supporting bracket, and the rotation of the screw rod can drive the supporting bracket to rise or fall along the guide rail, a block is fixed to the side of the platform car, and a limiting groove is provided on the supporting bracket. When the platform car moves along the track to the position of the supporting bracket, the block is located above the supporting bracket, and when the supporting bracket moves upward, the block can enter the limiting groove and engage with the limiting groove.

[0013] Preferably, the upper end of the screw is connected to the output shaft of the motor via a worm gear reducer, and the worm gear reducer is fixed on the support frame.

[0014] The beneficial effect of the present invention is that a nozzle group and a detachable graphite bracket are provided, and the gas containing silicon and carbon is sprayed into the furnace body through the nozzle group, so that the gas containing silicon and carbon can be quickly and evenly distributed to the reaction chamber in the furnace body to ensure the deposition rate and uniformity of silicon carbide on the annular single crystal substrate. The detachable graphite bracket is formed by a combination of multiple assembly columns, horizontal support rods and card pins. By adjusting the number of assembly columns, it is possible to avoid the graphite bracket occupying too much space in the reaction chamber, thereby reducing the impact of the graphite bracket on the airflow. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the implementation methods of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the implementation methods or the description of the prior art. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other implementation drawings can be derived from the provided drawings without creative work.

[0016] Figure 1 It is a schematic structural diagram of a preferred embodiment of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 2 It is a schematic structural diagram of a bottom cover of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 3 It is a schematic structural diagram of an assembly column of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 4 It is a schematic diagram of the structure of a lifting seat of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 5 It is a schematic structural diagram of a gear seat of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 6 It is a schematic structural diagram of a chuck of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 7 It is a schematic structural diagram of an inner gear ring and an outer gear ring of a deposition system for producing a chemical vapor deposition silicon carbide ring according to the present invention; Figure 8 The present invention is a schematic structural diagram of a support frame of a deposition system for producing a chemical vapor deposition silicon carbide ring.

[0017] The meanings of the reference numerals are as follows: In the attached drawings: 1, furnace body; 2, worm gear reducer; 3, nozzle group; 4, bottom cover; 5, graphite bracket; 6, annular single crystal substrate; 7, lifting seat; 8, support arm; 9, clamping assembly; 10, conveying mechanism; 11, lifting mechanism; 12, support column; 13, assembly column; 14, plug-in shaft; 15, clamping convex; 16, clamping groove; 17, horizontal support rod; 18, clamping needle; 19, inner gear ring; 20, outer gear ring; 21, gear ring bracket ; 22. Gear set; 23. Fixed shaft; 24. Chuck; 25. Connecting block; 26. First clamping jaw; 27. Second clamping jaw; 28. First slide post; 29. ​​Second slide post; 30. Gear seat; 31. Driving gear; 32. Driven gear; 33. Track; 34. Platform car; 35. Fixed frame; 36. Support frame; 37. Bottom bracket; 38. Support bracket; 39. Guide rail; 40. Screw rod; 41. Block; 42. Limiting groove. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] The concepts involved in the present invention are first described below in conjunction with the accompanying drawings. It should be noted that the following description of each concept is only to make the content of the present invention easier to understand, and does not limit the scope of protection of the present invention; at the same time, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0020] like Figures 1 to 8 As shown, the present invention provides an embodiment of a deposition system for producing chemical vapor deposition silicon carbide rings, including a furnace body 1, wherein the furnace body 1 has a reaction chamber, the reaction chamber adopts high temperature resistant insulating material, and the furnace body 1 is also provided with a heating module for providing heat energy to the reaction chamber, the heating module includes but is not limited to the use of multiple groups of heating wires arranged around the furnace body 1, as long as the required heating temperature can be reached, a removable bottom cover 4 is provided at the bottom of the furnace body 1, and the bottom cover 4 is used to seal the bottom of the furnace body 1.

[0021] A nozzle group 3 is provided with multiple nozzle groups 3, and the multiple nozzle groups 3 pass through the furnace body 1 and are fixed on the side wall of the furnace body 1. The multiple nozzle groups 3 are all connected to a gas pipeline, and the gas pipeline transports gas to the reaction chamber through the nozzle group 3. There are four nozzle groups 3, and the four nozzle groups 3 are arranged at equal intervals along the circumferential direction of the furnace body 1. Each nozzle group 3 includes multiple nozzles, and the multiple nozzles are fixed on the side wall of the furnace body 1 at equal intervals from top to bottom. The four nozzle groups 3 transport the gas containing silicon and carbon in the gas pipeline to the multiple nozzles from four directions, and then spray the gas containing silicon and carbon into the furnace body 1 through the multiple nozzles arranged from top to bottom, so that the gas containing silicon and carbon can be quickly and evenly distributed to the reaction chamber in the furnace body 1, so as to ensure the deposition rate and uniformity of silicon carbide on the annular single crystal substrate 6. A gas outlet is provided near the lower end of the furnace body 1 to discharge the waste gas after the reaction.

[0022] Multiple graphite supports 5 and multiple annular single crystal substrates 6, the graphite supports 5 are installed on the inner bottom of the bottom cover 4, the graphite supports 5 are used to support the annular single crystal substrates 6, the graphite supports 5 are detachable, when the bottom cover 4 is connected to the furnace body 1, the graphite supports 5 and the annular single crystal substrates 6 are both located in the reaction chamber.

[0023] The graphite bracket 5 includes a support column 12, an assembling column 13 and a plug-in shaft 14. The support column 12 is fixed to the inner bottom of the bottom cover 4. There are multiple assembling columns 13 and horizontal support rods 17 corresponding to each other. The tops of the support columns 12 and the assembling columns 13 are provided with a clamping protrusion 15. The bottom of the assembling column 13 is provided with a clamping groove 16. The clamping protrusion 15 can be engaged with the clamping groove 16. Multiple assembling columns 13 are stacked on the top of the support column 12 in sequence. The plug-in shaft 14 is plugged into the center of the assembling column 13 for connecting the support column 12 and multiple assembling columns 13. Three horizontal support rods 17 arranged at equal intervals are fixed on the circumferential surface of each assembling column 13. A vertical clamping pin 18 is fixed at the end of each horizontal support rod 17, and the annular single crystal substrate 6 is placed on the top of the clamping pin 18.

[0024] When different numbers of annular single crystal substrates 6 need to be placed in the furnace body 1, a corresponding number of assembling columns 13 can be selected according to the number of annular single crystal substrates 6, that is, three horizontal support rods 17 are installed on each assembling column 13, and the clamping pin 18 is fixed to the end of the horizontal support rod 17 to form a group of support structures to support a single annular single crystal substrate 6. The multiple groups of support structures are directly fixedly connected to each other through the plug-in shaft 14, the clamping groove 16 and the clamping protrusion 15. By repeatedly using the above combination, the height of the graphite bracket 5 can be adjusted according to the number of annular single crystal substrates 6. Compared with the method of using an integral graphite bracket 5, in this embodiment, by adjusting the number of assembling columns 13, it is possible to avoid the graphite bracket 5 occupying too much space in the reaction chamber, thereby reducing the impact of the graphite bracket 5 on the airflow.

[0025] The stabilizing mechanism includes a lifting seat 7, a support arm 8 and a clamping assembly 9. The support arm 8 is fixed on the lifting seat 7, and the clamping assembly 9 is installed on the support arm 8. When assembling the graphite bracket 5, since the assembling columns 13 and the annular single crystal substrate 6 are stacked layer by layer from bottom to top by a robot, when the assembling columns 13 are stacked higher and higher, the upper assembling columns 13 need to be stably supported to prevent the annular single crystal substrate 6 from shaking during the stacking process. At this time, the clamping assembly 9 is driven up and down by the lifting seat 7 to support different parts of the graphite bracket 5.

[0026] The clamping assembly 9 includes an inner gear ring 19, an outer gear ring 20, a gear ring bracket 21, a gear set 22, multiple fixed shafts 23 and multiple chucks 24. The inner ring of the inner gear ring 19 and the outer ring of the outer gear ring 20 are respectively meshed with the gear set 22. The gear set 22 can drive the inner gear ring 19 and the outer gear ring 20 to rotate in opposite directions. The bottoms of the inner gear ring 19 and the outer gear ring 20 are both rotatably mounted on the top of the gear ring bracket 21. Multiple chucks 24 are rotatably mounted on the fixed shaft 23. The fixed shaft 23 is fixed to the bottom of the gear ring bracket 21 through a connecting block 25. The front ends of the multiple chucks 24 are all facing the graphite bracket 5. The inner gear ring 19 and the outer gear ring 20 are used to drive the chucks 24 to clamp or loosen the graphite bracket 5.

[0027] The chuck 24 also includes a first jaw 26 and a second jaw 27. The middle sections of the first jaw 26 and the second jaw 27 are cross-arranged and rotatably connected to the fixed shaft 23 at the intersection. The tail end of the first jaw 26 and the tail end of the second jaw 27 are both provided with waist-shaped holes. A first slide column 28 is arranged in the waist-shaped hole at the tail end of the first jaw 26. The bottom of the first slide column 28 is fixedly connected to the upper surface of the outer gear ring 20 through a connecting plate. A second slide column 29 is arranged in the waist-shaped hole at the tail end of the second jaw 27. The bottom of the second slide column 29 is fixedly connected to the upper surface of the inner gear ring 19.

[0028] The gear set 22 includes a gear seat 30, a driving gear 31 and two driven gears 32. The driving gear 31 and the two driven gears 32 are rotatably mounted on the gear seat 30 side by side. The gear seat 30 is fixed to the bottom of the gear ring bracket 21. The two driven gears 32 are located on both sides of the driving gear 31 so that the two driven gears 32 can be driven by the driving gear 31 to rotate in opposite directions. The two driven gears 32 are respectively meshed with the inner side of the inner gear ring 19 and the outer side of the outer gear ring 20, and the driving wheel is driven to rotate by a servo motor.

[0029] The working principle of the stabilizing mechanism is: when the manipulator stacks the assembling column 13 and the annular single crystal substrate 6 layer by layer, in order to prevent the assembling column 13 from slightly vibrating and causing the placement position of the annular single crystal substrate 6 to shift, the gear set 22 drives the inner gear ring 19 and the outer gear ring 20 to rotate in the opposite direction, and when the inner gear ring 19 and the outer gear ring 20 rotate in the opposite direction, the first slide column 28 and the second slide column 29 are driven to move away from each other, so that the first slide column 28 and the second slide column 29 drive the front ends of the first clamp 26 and the second clamp 27 to open, which is similar to the principle of opening scissors, and then through the rotation of the inner gear ring 19 and the outer gear ring 20, the simultaneous opening and clamping action of multiple chucks 24 is realized, so that multiple graphite brackets 5 can be clamped. Synchronous clamping is performed, and the inner gear ring 19 and the outer gear ring 20 are also located on the outer ring of the graphite support 5, so that the surroundings of the two can be protected when assembling the graphite support 5 and placing the annular single crystal substrate 6, and the lifting seat 7 can also be adjusted along with the stacking height of the annular single crystal substrate 6, so as to support the upper end of the graphite support 5, so that the graphite support 5 is more stable during assembly and stacking of the annular single crystal substrate 6. After the annular single crystal substrate 6 is placed, the inner gear ring 19 and the outer gear ring 20 can be detached from the top of the graphite support 5, and then the bottom cover 4 and the graphite support 5 with the annular single crystal substrate 6 can be removed from the bottom of the inner gear ring 19 through the conveying mechanism 10.

[0030] The conveying mechanism 10 and the lifting mechanism 11 , the conveying mechanism 10 is used to transport the bottom cover 4 to the bottom of the furnace body 1 , and the lifting mechanism 11 is used to lift the bottom cover 4 to engage with the bottom of the furnace body 1 . The conveying mechanism 10 includes a track 33 , a platform vehicle 34 and a fixing frame 35 . The bottom cover 4 is mounted on the platform vehicle 34 via the fixing frame 35 . The track 33 is laid under the platform vehicle 34 and extends to the bottom of the lifting mechanism 11 .

[0031] The lifting mechanism 11 includes a support frame 36, a bottom bracket 37, a support bracket 38, a guide rail 39 and a screw rod 40. The furnace body 1 is fixed on the top of the support frame 36. The center of the support frame 36 forms an ascending channel. The bottom bracket 37 is fixed on both sides of the track 33 and is higher than the track 33. The upper end of the guide rail 39 is fixedly connected to the top of the support frame 36, and the lower end of the guide rail 39 is fixedly connected to the bottom bracket 37. The support bracket 38 is slidably installed on the guide rail 39. The screw rod 40 is threadedly connected to the support bracket 38. The rotation of the screw rod 40 can drive the support bracket 38 to rise or fall along the guide rail 39. A block 41 is fixed on the side of the platform car 34, and a limiting groove 42 is provided on the support bracket 38. When the platform car 34 moves along the track 33 to the position of the support bracket 38, the block 41 is located above the support bracket 38. When the support bracket 38 moves upward, the block 41 can enter the limiting groove 42 and engage with the limiting groove 42.

[0032] The upper end of the screw rod 40 is connected to the output shaft of the motor through the worm gear reducer 2 , and the worm gear reducer 2 is fixed on the support frame 36 .

[0033] When the platform vehicle 34 moves to the lifting mechanism 11, the block 41 on the side of the platform vehicle 34 is located directly above the support frame 38. At this time, the motor drives the screw 40 to move through the worm gear reducer 2, so that the support frame 38 rises, and the block 41 enters the limit groove 42 and engages with the limit groove 42 to prevent the platform vehicle 34 from shaking during the rising process. After that, the support frame 38 continues to drive the platform vehicle 34, the bottom cover 4 and the graphite support 5 with the annular single crystal substrate 6 placed thereon to move upward together until the bottom cover 4 engages with the bottom of the furnace body 1. At this time, the annular single crystal substrate 6 and the graphite support 5 are sent into the reaction chamber in the furnace body 1, and finally the bottom cover 4 and the furnace body 1 are locked by the clamp. During the locking process, the support bracket 38 always presses the bottom cover 4 and the furnace body 1, and because the worm gear reducer 2 has a self-locking effect, it can effectively prevent the bottom cover 4 from falling during the locking process. On the other hand, the bottom cover 4 and the furnace body 1 are pressed together by the support bracket 38. Compared with manually lifting and pressing the bottom cover 4, the mechanical pressing method can also make the two fit more closely.

[0034] This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core ideas. The above are only preferred implementation methods of the present invention. It should be pointed out that due to the limitations of textual expression, there are objectively infinite specific structures. For ordinary technicians in this technical field, without departing from the principles of the present invention, they can also make several improvements, modifications or changes, and can also combine the above technical features in an appropriate manner; these improvements, modifications, changes or combinations, or the direct application of the inventive concept and technical solution to other occasions without improvement, should be regarded as the protection scope of the present invention.

Claims

1. A deposition system for producing chemical vapor deposition silicon carbide rings, characterized in that: include: A furnace body (1), wherein the furnace body (1) has a reaction chamber, and wherein a heating module for providing heat energy to the reaction chamber is also arranged in the furnace body (1); a nozzle group (3), wherein a plurality of the nozzle groups (3) are provided, the plurality of nozzle groups (3) pass through the furnace body (1) and are fixed on the side wall of the furnace body (1), the plurality of nozzle groups (3) are all connected to a gas pipeline, and the gas pipeline transports gas into the reaction chamber through the nozzle group (3); A bottom cover (4), the bottom cover (4) being used to seal the bottom of the furnace body (1); a plurality of graphite supports (5) and a plurality of annular single crystal substrates (6), wherein the plurality of graphite supports (5) are mounted on the inner bottom of the bottom cover (4), the graphite supports (5) are used to support the annular single crystal substrates (6), and the graphite supports (5) are detachable; when the bottom cover (4) is connected to the furnace body (1), the graphite supports (5) and the annular single crystal substrates (6) are both located in the reaction chamber; A stabilizing mechanism, the stabilizing mechanism comprising a lifting seat (7), a support arm (8) and a clamping assembly (9), the support arm (8) being fixed on the lifting seat (7), the clamping assembly (9) being mounted on the support arm (8), and when assembling the graphite support (5), the lifting seat (7) drives the clamping assembly (9) to move up and down, so as to support different parts of the graphite support (5); A conveying mechanism (10) and a lifting mechanism (11), wherein the conveying mechanism (10) is used to transport the bottom cover (4) to the bottom of the furnace body (1), and the lifting mechanism (11) is used to lift the bottom cover (4) to engage with the bottom of the furnace body (1).

2. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: Four nozzle groups (3) are provided, and the four nozzle groups (3) are arranged at equal intervals along the circumferential direction of the furnace body (1), and each nozzle group (3) comprises a plurality of nozzles, and the plurality of nozzles are fixed on the side wall of the furnace body (1) at equal intervals from top to bottom.

3. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The graphite support (5) comprises a support column (12), an assembly column (13) and a plug-in shaft (14); the support column (12) is fixed to the inner bottom of the bottom cover (4); the tops of the support column (12) and the assembly column (13) are provided with a clamping protrusion (15); the bottom of the assembly column (13) is provided with a clamping groove (16); the clamping protrusion (15) can be engaged with the clamping groove (16); a plurality of the assembly columns (13) are stacked in sequence on the top of the support column (12); the plug-in shaft (14) is plugged into the center of the assembly column (13) for connecting the support column (12) and a plurality of the assembly columns (13); three horizontal support rods (17) arranged at equal intervals are fixed on the circumferential surface of each of the assembly columns (13); a clamping pin (18) pointing vertically upward is fixed at the end of each of the horizontal support rods (17); the annular single crystal substrate (6) is placed on the top of the clamping pin (18).

4. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The clamping assembly (9) comprises an inner gear ring (19), an outer gear ring (20), a gear ring bracket (21), a gear set (22), a plurality of fixed shafts (23) and a plurality of chucks (24); the inner ring of the inner gear ring (19) and the outer ring of the outer gear ring (20) are respectively meshed with the gear set (22); the gear set (22) can drive the inner gear ring (19) and the outer gear ring (20) to rotate in opposite directions; the bottoms of the inner gear ring (19) and the outer gear ring (20) are both rotatably mounted on the top of the gear ring bracket (21); the plurality of chucks (24) are rotatably mounted on the fixed shaft (23); the fixed shaft (23) is fixed to the bottom of the gear ring bracket (21) via a connecting block (25); the front ends of the plurality of chucks (24) are all facing the graphite bracket (5); the inner gear ring (19) and the outer gear ring (20) are used to drive the chucks (24) to clamp or release the graphite bracket (5).

5. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 4, characterized in that: The chuck (24) further comprises a first clamping jaw (26) and a second clamping jaw (27), wherein the middle sections of the first clamping jaw (26) and the second clamping jaw (27) are cross-arranged and the intersection is rotatably connected to the fixed shaft (23), the tail end of the first clamping jaw (26) and the tail end of the second clamping jaw (27) are both provided with waist-shaped holes, a first slide column (28) is arranged in the waist-shaped hole at the tail end of the first clamping jaw (26), the bottom of the first slide column (28) is fixedly connected to the upper surface of the outer gear ring (20) through a connecting sheet, and a second slide column (29) is arranged in the waist-shaped hole at the tail end of the second clamping jaw (27), the bottom of the second slide column (29) is fixedly connected to the upper surface of the inner gear ring (19).

6. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 4, characterized in that: The gear set (22) comprises a gear seat (30), a driving gear (31) and two driven gears (32); the driving gear (31) and the two driven gears (32) are rotatably mounted side by side on the gear seat (30); the gear seat (30) is fixed to the bottom of the gear ring support (21); the two driven gears (32) are located on both sides of the driving gear (31) so that the driving gear (31) can drive the two driven gears (32) to rotate in opposite directions; the two driven gears (32) are respectively meshed with the inner side of the inner gear ring (19) and the outer side of the outer gear ring (20); the driving gear is driven to rotate by a servo motor.

7. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 1, characterized in that: The conveying mechanism (10) comprises a track (33), a platform vehicle (34) and a fixing frame (35); the bottom cover (4) is mounted on the platform vehicle (34) via the fixing frame (35); the track (33) is laid below the platform vehicle (34) and extends to the bottom of the lifting mechanism (11).

8. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 7, characterized in that: The lifting mechanism (11) comprises a supporting frame (36), a bottom bracket (37), a supporting bracket (38), a guide rail (39) and a screw rod (40); the furnace body (1) is fixed to the top of the supporting frame (36); a rising channel is formed in the center of the supporting frame (36); the bottom bracket (37) is fixed to both sides of the track (33) and is higher than the track (33); the upper end of the guide rail (39) is fixedly connected to the top of the supporting frame (36); the lower end of the guide rail (39) is fixedly connected to the bottom bracket (37); and the supporting bracket (38) is slidably mounted on the guide rail (39). The screw rod (40) is threadedly connected to the support frame (38), and the rotation of the screw rod (40) can drive the support frame (38) to rise or fall along the guide rail (39). A clamping block (41) is fixed on the side of the platform vehicle (34), and a limiting groove (42) is provided on the support frame (38). When the platform vehicle (34) moves along the track (33) to the position of the support frame (38), the clamping block (41) is located above the support frame (38), and when the support frame (38) moves upward, the clamping block (41) can enter the limiting groove (42) and engage with the limiting groove (42).

9. The deposition system for producing a chemical vapor deposition silicon carbide ring according to claim 8, characterized in that: The upper end of the screw rod (40) is connected to the output shaft of the motor via a worm gear reducer (2), and the worm gear reducer (2) is fixed on the support frame (36).

Images