Polishing agent and polishing method

Abstract

The invention provides a polishing agent and a polishing method. The polishing agent comprises, by mass, 5-25 parts of a mucosa agent, 10-25 parts of sulfuric acid, 40-80 parts of a brightener, 0.1-2 parts of sodium 3-nitrobenzenesulfonate and 1-25 parts of reducing acid. Wherein the mucosa agent is prepared from at least one of dimethylamino formamide and 2-aminobenzamide; under the conditions that the acid content is low and phosphoric acid and nitric acid are not added, the adsorption capacity of the surface of the aluminum product to chemical polishing bath liquid can also be improved, a high-viscosity mucous membrane layer is formed on the surface of the aluminum product, substances in the membrane are controlled not to be diffused into the peripheral polishing bath liquid, reaction is controlled, and the service life of the aluminum product is prolonged. In addition, the polishing solution can improve the brightness and flatness of a plating layer, inhibit the phenomena of yellowing and the like, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts and reduce undesirable pinholes, does not generate a large amount of yellow smoke and irritant gas, is free of phosphorus in waste water, is relatively friendly to the environment and human bodies, and achieves an excellent polishing effect at the same time.

Description

Technical Field

[0001] The invention belongs to the technical field of aluminum alloy polishing, and in particular relates to a polishing agent and a polishing method. Background Art

[0002] Aluminum is abundant in nature. As a nonferrous metal, its alloy has the advantages of light weight, good thermal conductivity, good ductility and easy processing. It is widely used in many fields such as aerospace, machinery manufacturing and chemical industry. However, aluminum itself has low hardness and poor wear resistance. It is easily damaged during mechanical processing, resulting in surface defects such as three scratches and wear, which affect the flatness and decorativeness of the aluminum surface. At the same time, local corrosion may even occur at the surface defects, affecting the chemical stability of the aluminum material.

[0003] In the actual processing process, in order to eliminate the surface defects of aluminum alloys and meet various appearance requirements, such as matte or bright mirror, it is often necessary to treat its surface, and surface polishing is an important means to eliminate surface defects of aluminum products and beautify the appearance of products. Surface polishing can not only be used as the final treatment of the aluminum surface, but also as a pre-treatment process for aluminum anodizing and chemical plating. Generally speaking, there are only three types of aluminum surface polishing processes: mechanical polishing, electrolytic polishing and chemical polishing. There are great differences in the working principles and conditions of these three polishing processes. Among them, during chemical polishing, aluminum dissolves in the form of ions and enters the solution and gathers near the surface of the product, which increases the viscosity of the solution on the surface of the product and causes the dissolution rate of aluminum to decrease; because the mucus in the concave part of the product surface has a large specific gravity, it is easy to deposit in the concave part of the aluminum part, so the concave part of the product surface is close to the passivation state; and the mucus layer on the protruding part of the surface is very thin, so the protruding part is easy to contact with the fresh solution and be dissolved. In addition, when the product is dissolved, the crystal deformation layer produced during mechanical polishing and the grains with large lattices and irregular arrangement are dissolved first, so that the lattice arrangement on the surface of the product is more orderly and the grains are more compact and fine. Therefore, the higher the dullness of the aluminum surface and the finer the grains, the higher the quality of chemical polishing.

[0004] Chemical polishing usually uses a three-acid polishing liquid (H2SO4-H3PO4-HNO3 system), which is a chemical polishing liquid made of three acids in a certain proportion. The chemical polishing process using this three-acid polishing liquid appeared earlier and is customarily called traditional three-acid polishing. The surface of aluminum products polished by three-acid polishing has good corrosion resistance, long-lasting gloss retention, no crystal deformation layer, and is not easy to be mixed with other impurities.

[0005] However, in the traditional three-acid chemical treatment system, due to the presence of nitric acid, highly toxic yellow smoke (NO xThe presence of phosphoric acid will produce a large amount of phosphides, polluting the water quality. Therefore, the traditional three-acid disposal system not only pollutes the ecological environment, but also endangers human health.

[0006] Therefore, it is of great significance to develop a polishing agent that is environmentally friendly and easy to handle, does not produce yellow smoke during operation, causes little damage to the human body, and can ensure excellent polishing effect. Summary of the invention

[0007] The invention provides a polishing agent for solving the problem in the prior art that a three-acid polishing system is prone to generate yellow smoke, phosphorus-containing waste liquid and the like, which pollutes the environment.

[0008] The present invention provides a polishing method, which allows the above-mentioned polishing agent to participate in the polishing process, the waste liquid is environmentally friendly and easy to handle, no yellow smoke is generated during the operation process, little damage is caused to the human body, and an excellent polishing effect can be achieved.

[0009] In a first aspect, the present invention provides a polishing agent, comprising, by mass: 5 to 25 parts of a mucosal agent, 10 to 25 parts of sulfuric acid, 40 to 80 parts of a brightening agent, 0.1 to 2 parts of sodium m-nitrobenzene sulfonate, and 1 to 25 parts of a reducing acid; Wherein, the mucosal agent includes at least one of dimethylaminoformamide and 2-aminobenzamide.

[0010] Further, the mucosal agent comprises 5 to 20 parts by mass; and / or, Including 10 to 20 parts by mass of sulfuric acid; and / or, The brightener comprises 50 to 70 parts by mass; and / or, 0.1~1 part of sodium m-nitrobenzene sulfonate.

[0011] Furthermore, the invention further comprises, by mass: 0.001 to 0.01 parts of sodium dodecyl sulfate, 0.001 to 0.02 parts of corrosion inhibitor and 0.5 to 2 parts of activator.

[0012] Further, the brightener comprises at least one of acetic acid and propionic acid; and / or, The reducing acid includes at least one of salicylic acid, glyoxylic acid, glucuronic acid, and hypophosphorous acid; and / or, The corrosion inhibitor includes at least one of dithiobenzothiazole, quinolinesulfonic acid, and 8-hydroxy-5-quinolinesulfonic acid; and / or, The activator includes at least one of nickel sulfate and aluminum sulfate.

[0013] Furthermore, the polishing agent includes, by weight: 5 to 20 parts of dimethylaminoformamide, 10 to 20 parts of sulfuric acid, 50 to 70 parts of propionic acid, 0.1 to 1 part of sodium m-nitrobenzene sulfonate, 0.001 to 0.01 part of sodium dodecyl sulfate, 1 to 10 parts of salicylic acid, 1 to 5 parts of glyoxylic acid, 0.001 to 0.01 part of dimercaptobenzothiazole, 0.001 to 0.01 part of quinoline sulfonic acid, 0.001 to 0.1 part of nickel sulfate, and 0.5 to 2 parts of aluminum sulfate.

[0014] Furthermore, the polishing agent also includes a silicon remover.

[0015] Furthermore, the silicon remover includes at least one of ammonium bifluoride or ammonium fluoride.

[0016] Furthermore, the mass fraction of the silicon remover in the polishing agent is 0.01 to 0.05 parts.

[0017] In a second aspect, the present invention provides a polishing method, wherein the polishing agent described in the first aspect is used in a polishing process.

[0018] Furthermore, in the polishing process, the mass ratio of the material to be polished to the polishing agent is 1:(10-100).

[0019] Furthermore, the polishing treatment is performed at a temperature of 75-90° C. and a time of 40-120 seconds.

[0020] The polishing agent provided by the present invention can replace the effects of phosphoric acid and nitric acid through the synergistic effect of 5-25 parts of a mucosal agent of at least one of dimethylaminoformamide and 2-aminobenzamide, 10-25 parts of sulfuric acid, 40-80 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzene sulfonate, and 1-25 parts of a reducing acid. Under the condition of low acid content and without adding phosphoric acid and nitric acid, the adsorption force of the surface of the aluminum product to the polishing tank liquid can also be improved, and a high-viscosity mucosal layer can be formed on the surface of the aluminum product to control the substances in the film from diffusing into the peripheral polishing tank liquid, so as to realize the control of the reaction, and can improve the brightness and flatness of the coating, inhibit yellowing and the like, accelerate the reaction rate, shorten the polishing time, accelerate the dissolution of the protruding parts, reduce the generation of pinhole defects, and does not generate a large amount of yellow smoke and irritating gas. The wastewater is phosphorus-free, is more friendly to the environment and the human body, and achieves an excellent polishing effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 The material to be polished in Example 1 of the present invention; Figure 2 The material is the material after chemical polishing in Example 1 of the present invention; Figure 3 The material is the material after chemical polishing in Comparative Example 1 of the present invention; Figure 4 This is the material after chemical polishing in Comparative Example 7 of the present invention. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] In a first aspect, the present invention provides a polishing agent, comprising, by mass: 5 to 25 parts of a mucosal agent, 10 to 25 parts of sulfuric acid, 40 to 80 parts of a brightening agent, 0.1 to 2 parts of sodium m-nitrobenzene sulfonate, and 1 to 25 parts of a reducing acid; Wherein, the mucosal agent includes at least one of dimethylaminoformamide and 2-aminobenzamide.

[0024] The polishing agent provided by the present invention can replace the effects of phosphoric acid and nitric acid through the synergistic effect of 5-20 parts of a mucosal agent of at least one of dimethylaminoformamide and 2-aminobenzamide, 10-20 parts of sulfuric acid, 50-70 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzene sulfonate, and 1-25 parts of a reducing acid. Under the condition of low acid content and without adding phosphoric acid and nitric acid, the adsorption force of the surface of the aluminum product to the polishing tank liquid can also be improved, and a high-viscosity mucosal layer can be formed on the surface of the aluminum product to control the substances in the film from diffusing into the peripheral polishing tank liquid, so as to realize the control of the reaction, and can improve the brightness and flatness of the coating, inhibit yellowing and the like, accelerate the reaction rate, shorten the polishing time, accelerate the dissolution of the protruding parts, reduce the generation of pinhole defects, and does not generate a large amount of yellow smoke and irritating gas. The wastewater is phosphorus-free, and is more friendly to the environment and the human body, while achieving an excellent polishing effect.

[0025] Optionally, the polishing agent further includes 5-20 parts of mucosal agent, 10-20 parts of sulfuric acid, 50-70 parts of brightener, and 0.1-1 part of sodium m-nitrobenzene sulfonate by mass; the polishing agent can be further activated, the reaction activity of the polishing agent and the aluminum material can be improved, the pitting, pinholes, pitting and yellowing can be reduced, the brightness and flatness of the coating can be improved, and the polishing effect can be further improved.

[0026] Furthermore, the invention further comprises, by mass: 0.001 to 0.01 parts of sodium dodecyl sulfate, 0.001 to 0.02 parts of corrosion inhibitor and 0.5 to 2 parts of activator.

[0027] It can be understood that adding 0.001-0.01 parts of sodium dodecyl sulfate, 0.001-0.02 parts of corrosion inhibitor and 0.5-2 parts of activator can further activate the polishing agent, improve the reaction activity of the polishing agent with aluminum, reduce pitting, pinholes, pitting and yellowing, improve the brightness and flatness of the coating, and further improve the polishing effect.

[0028] In a specific embodiment, the brightener includes at least one of acetic acid and propionic acid; When at least one of acetic acid and propionic acid is used as the brightener, the brightness of the polished coating can be further improved.

[0029] In a specific embodiment, the reducing acid includes at least one of salicylic acid, glyoxylic acid, and glucuronic acid; The inventors have found that when the reducing acid includes at least one of salicylic acid, glyoxylic acid, and glucuronic acid, it can further reduce pitting, pinholes, pitting, and yellowing, improve the brightness and flatness of the coating, and further improve the polishing effect; optionally, it can be further refined into salicylic acid and glyoxylic acid or glucuronic acid.

[0030] In a specific embodiment, the corrosion inhibitor includes at least one of dimercaptobenzothiazole, quinolinesulfonic acid, and 8-hydroxy-5-quinolinesulfonic acid; When at least one of dimercaptobenzothiazole, quinolinesulfonic acid, and 8-hydroxy-5-quinolinesulfonic acid is used as a corrosion inhibitor, pitting, pinholes, pitting, yellowing, and the like can be further reduced, the brightness and flatness of the coating can be improved, and the polishing effect can be further improved; optionally, it can be further refined into dimercaptobenzothiazole and quinolinesulfonic acid and / or 8-hydroxy-5-quinolinesulfonic acid.

[0031] In a specific embodiment, the activator includes at least one of nickel sulfate and aluminum sulfate.

[0032] The activator can activate the polishing agent. The inventors found that when at least one of nickel sulfate and aluminum sulfate is added, the reaction activity of the polishing agent and the aluminum material can be further improved, the pitting, pinholes, pitting and yellowing phenomena can be reduced, the brightness and flatness of the coating can be improved, and the polishing effect can be further improved.

[0033] Specifically, the polishing agent includes, by weight: 5 to 20 parts of dimethylaminoformamide, 10 to 20 parts of sulfuric acid, 50 to 70 parts of propionic acid, 0.1 to 1 part of sodium m-nitrobenzene sulfonate, 0.001 to 0.01 part of sodium dodecyl sulfate, 1 to 10 parts of salicylic acid, 1 to 5 parts of glyoxylic acid, 0.001 to 0.01 part of dimercaptobenzothiazole, 0.001 to 0.01 part of quinolinesulfonic acid, 0.001 to 0.1 part of nickel sulfate, and 0.5 to 2 parts of aluminum sulfate.

[0034] By specifically limiting the component types and specific ratios of the polishing agent, the adsorption capacity of the aluminum product surface to the polishing tank liquid can be further improved, a high-viscosity mucous film layer can be formed on the surface of the aluminum product, and the substances in the film can be controlled to prevent them from diffusing into the polishing tank liquid on the periphery, thereby controlling the reaction. It can also further improve the brightness and flatness of the coating, inhibit yellowing and other phenomena, speed up the reaction rate, shorten the polishing time, accelerate the dissolution of protruding parts, reduce the generation of pinholes, and achieve better polishing performance under low acid content and without sulfuric acid and nitric acid.

[0035] Optionally, the polishing agent also includes a desiliconizing agent.

[0036] It is understandable that aluminum alloys often need to add silicon to enhance their performance. For silicon-aluminum alloys, the polishing agent also includes a silicon remover, which can increase the polishing agent's ability to dissolve silicon and improve polishing performance.

[0037] In a specific embodiment, the silicon removal agent includes at least one of ammonium bifluoride or ammonium fluoride.

[0038] When the silicon removing agent includes at least one of ammonium bifluoride or ammonium fluoride, the ability of the polishing agent to dissolve silicon can be further improved, thereby improving the polishing performance.

[0039] In a specific embodiment, the mass fraction of the silicon remover in the polishing agent is 0.01-0.05 parts.

[0040] When the mass fraction of silicon remover in the polishing agent is 0.01~0.05 parts, it can further improve the polishing agent's ability to dissolve silicon and enhance polishing performance, further improve the brightness and flatness of the coating, inhibit yellowing and other phenomena, accelerate the reaction rate, shorten the polishing time, accelerate the dissolution of protruding parts, reduce the generation of pinhole defects, and achieve better polishing performance.

[0041] In a second aspect, the present invention provides a polishing method, in which the above-mentioned polishing agent is involved in the polishing process.

[0042] The chemical polishing method provided by the present invention allows the above-mentioned polishing agent to participate in the polishing treatment, and can achieve the improvement of the adsorption capacity of the aluminum product surface to the chemical polishing tank liquid under the condition of low acid content and without adding phosphoric acid and nitric acid, and form a high-viscosity mucous film layer on the surface of the aluminum product, so as to control the substances in the film from diffusing into the polishing tank liquid on the periphery, thereby achieving the control of the reaction, and can improve the brightness and flatness of the coating, inhibit yellowing and the like, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of the protruding parts, reduce the generation of pinhole defects, and does not generate a large amount of yellow smoke and irritating gas, and the wastewater is phosphorus-free, which is more friendly to the environment and the human body, while achieving an excellent polishing effect.

[0043] Furthermore, the mass ratio of the material to be polished to the polishing agent in the polishing process is 1:(10~100).

[0044] By further limiting the mass ratio of the material to be polished to the polishing agent, the phenomena of pitting, pinholes, pitting and yellowing can be reduced, the brightness and flatness of the coating can be improved, and the polishing effect can be further improved.

[0045] In a specific embodiment, the polishing process is performed at a temperature of 75-90° C. and for a time of 40-120 seconds.

[0046] By further limiting the temperature and time of the polishing process, the polishing effect can be further improved, excessive damage to the material to be polished can be prevented, and the polishing efficiency can be improved.

[0047] Hereinafter, a polishing agent and a polishing method provided by the present invention are described in detail through specific embodiments.

[0048] Example 1 The material to be polished in this embodiment is 13.6g of 5052 aluminum alloy plate with a size of 100*100*0.5mm. Figure 1 shown.

[0049] The polishing method includes the following steps: (1) Soak the material to be polished in a neutral degreasing liquid with a pH value of 7, perform ultrasonic degreasing for 10 minutes, and then wash it with water three times to obtain a pre-treated aluminum alloy; (2) 13.6 g of the pre-treated aluminum alloy was placed in 3 L of polishing agent and polished at 82 °C for 90 s, then washed three times with water, dried and observed for appearance; the treated material was Figure 2 As shown; Among them, the polishing agent includes, by weight: 15 parts of dimethylaminoformamide, 16 parts of sulfuric acid, 60 parts of propionic acid, 0.5 parts of sodium m-nitrobenzene sulfonate, 0.003 parts of sodium dodecyl sulfate, 5 parts of salicylic acid, 2 parts of glyoxylic acid, 0.005 parts of dimercaptobenzothiazole, 0.01 parts of quinolinesulfonic acid, 0.05 parts of nickel sulfate, 1 part of aluminum sulfate, and 0.05 parts of ammonium bifluoride.

[0050] Example 2 The difference between this embodiment and embodiment 1 is that the polishing agent includes, by weight: 7.886 parts of dimethylaminoformamide, 20 parts of sulfuric acid, 69.5 parts of propionic acid, 0.1 part of sodium m-nitrobenzene sulfonate, 0.001 part of sodium dodecyl sulfate, 1 part of salicylic acid, 1 part of glyoxylic acid, 0.001 part of dimercaptobenzothiazole, 0.001 part of quinolinesulfonic acid, 0.001 part of nickel sulfate, 0.5 part of aluminum sulfate, and 0.01 part of ammonium bifluoride.

[0051] Example 3 The difference between this embodiment and embodiment 1 is that the polishing agent includes, by weight: 20 parts of dimethylaminoformamide, 20 parts of sulfuric acid, 45.99 parts of propionic acid, 1 part of sodium m-nitrobenzene sulfonate, 0.01 part of sodium dodecyl sulfate, 7.83 parts of salicylic acid, 3 parts of glyoxylic acid, 0.01 part of dimercaptobenzothiazole, 0.01 part of quinoline sulfonic acid, 0.1 part of nickel sulfate, 2 parts of aluminum sulfate, and 0.05 part of ammonium bifluoride.

[0052] Example 4 The difference between this embodiment and embodiment 1 is that the polishing agent includes, by weight: 20 parts of dimethylaminoformamide, 20 parts of sulfuric acid, 53.597 parts of acetic acid, 0.1 parts of sodium m-nitrobenzene sulfonate, 4 parts of glucuronic acid, 0.003 parts of sodium dodecyl sulfate, 0.005 parts of 8-hydroxy-5-quinoline sulfonic acid, and 0.8 parts of aluminum sulfate.

[0053] Example 5 The difference between this embodiment and embodiment 1 is that the polishing agent comprises, by weight, 20 parts of dimethylaminoformamide, 20 parts of sulfuric acid, 50 parts of acetic acid, 0.1 parts of sodium m-nitrobenzene sulfonate, and 10 parts of glyoxylic acid.

[0054] Example 6 The difference between this embodiment and embodiment 1 is that 60 parts of propionic acid are replaced by 60 parts of lactic acid.

[0055] Example 7 The difference between this embodiment and embodiment 1 is that 5 parts of salicylic acid and 2 parts of glyoxylic acid are replaced by 7 parts of oxalic acid.

[0056] Example 8 The difference between this embodiment and embodiment 1 is that 0.005 parts of dimercaptobenzothiazole and 0.01 parts of quinolinesulfonic acid are replaced by 0.015 parts of thiourea.

[0057] Example 9 The difference between this embodiment and embodiment 1 is that 0.05 parts of nickel sulfate and 1 part of aluminum sulfate are replaced by 1.05 parts of aluminum chloride.

[0058] Example 10 The difference between this embodiment and embodiment 1 is that ammonium bifluoride is not added.

[0059] Embodiment 11 The difference between this embodiment and embodiment 1 is that 0.05 parts of ammonium bifluoride is replaced by 0.05 parts of hydrofluoric acid.

[0060] Example 12 The difference between this embodiment and embodiment 1 is that in step (2), the polishing time is 30 seconds.

[0061] Embodiment 13 The difference between this embodiment and embodiment 1 is that in step (2), the temperature of the polishing treatment is 70°C.

[0062] Comparative Example 1 The difference between this comparative example and Example 1 is that no dimethylaminoformamide is added. Figure 3 shown.

[0063] Comparative Example 2 The difference between this comparative example and Example 1 is that the added amount of dimethylaminoformamide is 3 parts.

[0064] Comparative Example 3 The difference between this comparative example and Example 1 is that the amount of sulfuric acid added is 5 parts.

[0065] Comparative Example 4 The difference between this comparative example and Example 1 is that no sulfuric acid is added.

[0066] Comparative Example 5 The difference between this comparative example and Example 1 is that propionic acid and glyoxylic acid are not added.

[0067] Comparative Example 6 The difference between this comparative example and Example 1 is that salicylic acid and glyoxylic acid are not added.

[0068] Comparative Example 7 The difference between this comparative example and Example 1 is that no dimercaptobenzothiazole and quinolinesulfonic acid are added. Figure 4 shown.

[0069] Comparative Example 8 The difference between this comparative example and Example 1 is that sodium m-nitrobenzene sulfonate is not added.

[0070] Comparative Example 9 The difference between this comparative example and Example 1 is that the polishing agent comprises, by weight, 10 parts of sodium cocoyl isethionate, 3 parts of 1-phenyl-5-mercaptotetrazole, 3 parts of sodium 3-mercapto-1-propane sulfonate, 0.1 parts of copper sulfate, 0.3 parts of sodium tungstate dihydrate, 1 part of corrosion inhibitor, 0.2 parts of surfactant, 25 parts of sulfuric acid, and 57.4 parts of deionized water; wherein the chemical formula of the corrosion inhibitor is , R1 is hydroxyethyl, R2 is methyl; the chemical formula of the surfactant is , R3 is isopropyl, R4 is p-methylphenyl, m=20, n=30.

[0071] Comparative Example 10 The difference between this comparative example and Example 1 is that the polishing agent comprises, by weight, 20 parts of 98wt% sulfuric acid, 0.01 parts of sulfate, 1 part of organic acid salt, 0.05 parts of surfactant, and 0.1 parts of corrosion inhibitor; wherein the sulfate is sodium sulfate and potassium sulfate, and the weight ratio is 0.8:1; the organic acid salt is ammonium acetate and copper acetate, and the weight ratio is 1:1; the surfactant is sodium tridecyl alcohol polyether-12 carboxylate, sodium tridecyl alcohol polyether-7 carboxylate, and nonylphenol polyoxyethylene (10) ether; the weight ratio of sodium tridecyl alcohol polyether-12 carboxylate and sodium tridecyl alcohol polyether-7 carboxylate is 5:0.3; the total weight ratio of nonylphenol polyoxyethylene (10) ether and sodium tridecyl alcohol polyether-12 carboxylate and sodium tridecyl alcohol polyether-7 carboxylate is 0.1:1; nonylphenol polyoxyethylene (10) ether is purchased from Xingtai Xinlanxing Technology Co., Ltd.; the corrosion inhibitor is phenylthiourea and benzotriazole, and the weight ratio is 1:3.

[0072] Comparative Example 11 The difference between this comparative example and Example 1 is that the added amount of propionic acid is 45 parts.

[0073] Comparative Example 12 The difference between this comparative example and Example 1 is that the added amount of sodium m-nitrobenzene sulfonate is 0.05 parts.

[0074] Comparative Example 13 The difference between this comparative example and Example 1 is that the amount of salicylic acid added is 0.5 parts, and glyoxylic acid is not added.

[0075] Comparative Example 14 The difference between this comparative example and Example 1 is that salicylic acid is not added, and the amount of glyoxylic acid added is 0.5 parts.

[0076] Comparative Example 15 The difference between this comparative example and Example 1 is that the amount of salicylic acid added is 0.25 parts, and the amount of glyoxylic acid added is 0.25 parts.

[0077] Test Example 1 The appearance of the aluminum alloy obtained by the polishing treatment of the above-mentioned embodiment and comparative example was observed, and the results are shown in Table 1. Among them, the 1PCS material treatment includes polishing a 13.6g 5052 aluminum alloy plate of 100*100*0.5mm, and the polishing method is the same as that of embodiment 1.

[0078] Table 1

[0079]

[0080]

[0081] It can be seen from the table that after the polishing agent provided by the present invention is used to participate in the polishing treatment of aluminum alloy, a uniform and bright appearance can be obtained, and a large amount of yellow smoke and irritating gas will not be generated, the wastewater is phosphorus-free, and it is more friendly to the environment and the human body, while achieving an excellent polishing effect.

[0082] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A polishing agent, characterized in that: The components include, by mass: 5-25 parts of mucosal agent, 10-25 parts of sulfuric acid, 40-80 parts of brightener, 0.1-2 parts of sodium m-nitrobenzene sulfonate, and 1-25 parts of reducing acid; Wherein, the mucosal agent includes at least one of dimethylaminoformamide and 2-aminobenzamide.

2. The polishing agent according to claim 1, characterized in that The mucosal agent comprises 5 to 20 parts by mass; and / or, Including 10 to 20 parts by mass of sulfuric acid; and / or, The brightener comprises 50 to 70 parts by mass; and / or, 0.1~1 part of sodium m-nitrobenzene sulfonate.

3. The polishing agent according to claim 2, characterized in that The invention also includes, by weight: 0.001 to 0.01 parts of sodium dodecyl sulfate, 0.001 to 0.02 parts of corrosion inhibitor and 0.5 to 2 parts of activator.

4. The polishing agent according to claim 3, characterized in that The brightener comprises at least one of acetic acid and propionic acid; and / or, The reducing acid includes at least one of salicylic acid, glyoxylic acid, glucuronic acid, and hypophosphorous acid; and / or, The corrosion inhibitor includes at least one of dithiobenzothiazole, quinolinesulfonic acid, and 8-hydroxy-5-quinolinesulfonic acid; and / or, The activator includes at least one of nickel sulfate and aluminum sulfate.

5. The polishing agent according to claim 4, characterized in that The polishing agent includes, by weight: 5-20 parts of dimethylaminoformamide, 10-20 parts of sulfuric acid, 50-70 parts of propionic acid, 0.1-1 parts of sodium m-nitrobenzene sulfonate, 0.001-0.01 parts of sodium dodecyl sulfate, 1-10 parts of salicylic acid, 1-5 parts of glyoxylic acid, 0.001-0.01 parts of dimercaptobenzothiazole, 0.001-0.01 parts of quinoline sulfonic acid, 0.001-0.1 parts of nickel sulfate, and 0.5-2 parts of aluminum sulfate.

6. The polishing agent according to any one of claims 1 to 5, characterized in that The polishing agent also includes a silicon remover.

7. The polishing agent according to claim 6, characterized in that The silicon remover includes at least one of ammonium bifluoride or ammonium fluoride.

8. The polishing agent according to claim 7, characterized in that The mass fraction of the silicon remover in the polishing agent is 0.01 to 0.05 parts.

9. A polishing method, characterized in that: The polishing agent according to any one of claims 1 to 8 is used in the polishing process.

10. The polishing method according to claim 9, characterized in that: The mass ratio of the material to be polished to the polishing agent in the polishing process is 1:(10-100).

11. The polishing method according to claim 9 or 10, characterized in that: The polishing process is performed at a temperature of 75 to 90° C. and for a time of 40 to 120 seconds.

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