A zero-searching phase switchable photoelectric encoder chip device

Abstract

The application provides a zero-phase switchable photoelectric encoder chip device, which mainly comprises an incremental code channel photoelectric diode (PD) array (1), a zero signal detection photoelectric diode (PD) array (2), a trans-impedance amplifier (TIA) array (3), a switch unit array (4), a control switch circuit (5) and a photoelectric encoder chip (6). The application can effectively solve the precision loss problem caused by the phase error of the incremental signal and the zero signal of the photoelectric encoder chip in the actual application process, can effectively improve the fault tolerance and reliability of the photoelectric encoder system, and can be widely applied in the fields of industrial automation, medical equipment, aerospace and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to a zero-phase switchable photoelectric encoder chip device, belonging to the technical field of precise position and motion detection. The chip has important applications in a wide range of fields such as industrial automation, numerical control machine tools, medical equipment, printing and packaging equipment, aerospace, scientific experiments, robotics, automotive industry, and shipbuilding and ocean engineering. Its core function is to provide high-precision zero detection and phase adjustment capabilities for these fields, meeting the needs of precise positioning and efficient zero searching in complex environments, and is an important technical means to realize the intelligentization and automation of equipment. BACKGROUND

[0002] Traditional photoelectric encoder chip designs play an important role in positioning and motion measurement, and are widely used in industrial automation, robotics, automotive industry and other fields. Its working principle is based on optical sensing, which determines the absolute position of an object by receiving changes in optical signals through a photodiode (PD) array. However, photoelectric encoders often face the requirement of phase matching between zero signal and incremental signal in actual application to achieve accurate positioning and motion control. This phase matching helps the system accurately identify and calibrate the position during initialization and zero detection.

[0003] With the application of industrial automation and precision instruments, photoelectric encoders as the core components of displacement, position and speed measurement, the requirements for precision and reliability are increasingly high. Especially in the process of high-precision photoelectric encoder design and application, due to the mechanical alignment error between the chip and the code disc and the installation error, the phase of the zero signal and the incremental signal often cannot meet the standard requirements, thereby affecting the measurement accuracy and stability of the system. In addition, environmental light interference, light source power fluctuation, temperature change and other external factors can also cause errors in the encoder during operation, and even cause errors, affecting the overall performance. These error problems not only reduce the reliability of the encoder, but also can cause the measurement to be inaccurate, affecting the normal operation of the system. Therefore, how to realize the adjustability of the phase between the zero signal and the incremental signal has become the key to improving the performance of the encoder.

[0004] Currently, traditional solutions include error compensation through hardware calibration or complex adjustment circuits, but these methods are often costly and cannot respond to errors in dynamic changes in real time. Therefore, in order to improve the accuracy and adaptability of photoelectric encoders in harsh environments, it is necessary to design a new encoder chip structure that can meet the requirements of precise position measurement while also adjusting the phase between the zero signal and the incremental signal to adapt to different application requirements and ensure high precision and stability.

[0005] To this end, the application provides a zero-phase switchable photoelectric encoder chip device. By adopting the combination device of a zero-position signal detection array composed of 8 photodiodes (PD), a transimpedance amplifier (TIA) array, a switch unit array and a control switching circuit, the device uses multiple photodiodes for signal acquisition and comparison, improves the fault tolerance and reliability of the system, reduces the failure caused by the failure of a single sensor; at the same time, it can realize the phase adjustment and switching of multiple zero-position signals and incremental signals, and adapt to the requirements of different application scenarios. By controlling the selection and output of the zero-position signal by the control switching circuit, the output of the zero-position phase can be accurately controlled in different modes, effectively reducing the error code caused by mechanical error and environmental influence, and realizing high-precision position and motion detection. SUMMARY

[0006] The application aims to provide a zero-phase adjustable photoelectric encoder chip device. The device is composed of an incremental code channel photodiode PD array (1), a zero-position signal detection photodiode PD array (2), a transimpedance amplifier TIA array (3), a switch unit array (4), a control switching circuit (5) and a photoelectric encoder chip (6).

[0007] The purpose of the application is achieved as follows:

[0008] The incremental code channel photodiode PD array (1) will generate two groups of positive and sine varying photocurrent signals with a period of T when detecting light signals, and the zero-position signal detection photodiode PD array (2) will have a fixed The photoelectric current signals generated by the zero signal detection photodiode PD array (2) are synchronously output to the transimpedance amplifier TIA array (3), a PD in the zero signal detection photodiode PD array (2) is connected with a single transimpedance amplifier TIA in the transimpedance amplifier TIA array (3), the transimpedance amplifier TIA array (3) processes and amplifies the photoelectric current signals generated by the zero signal detection photodiode PD array (2) to output voltage signals; and then the voltage signals are output to the control switching circuit (5) through the switch unit array (4), the control switching circuit (5) decodes the received control signals according to the control signals of the external control device or system, generates corresponding control signals to drive the control switch unit array (4), selects and outputs corresponding mode signals (such as zero signals PD1 to PD8), and the selected zero signal is transmitted to a subsequent processing module of the chip or an external device through an output interface, and is used for subsequent signal processing and the like. The photoelectric encoder chip device with the zero-searching and phase-switchable function can effectively improve the zero-searching efficiency of the photoelectric encoder chip in the application process, and can effectively avoid the problems of the phase mismatch between the zero signal and the incremental signal caused by the installation error and the alignment error of the photoelectric encoder chip and the code disc, and the failure problem caused by the failure of a single photodiode, and can effectively improve the fault tolerance and reliability of the system, and improve the overall precision of the entire photoelectric encoder system. The photodiode structure in the incremental code channel photodiode (PD) array (1) in the device can be any one of a PN photodiode, a PIN photodiode and the like, which functions to receive the light spot signals transmitted or reflected by the code disc and convert the light spot signals into photoelectric current signals; the single photodiode (PD) has various shapes, and the size and distribution thereof follow certain rules, and can output two groups of differential positive and negative sine change period T photoelectric current signals during the rotation of the code disc.

[0009] The photodiode structure in the zero signal detection photodiode PD array (2) in the device can be any one of a PN photodiode, a PIN photodiode and the like, which is mainly composed of eight photodiodes, namely PD1, PD2, PD3, PD4, PD5, PD6, PD7 and PD8, and the distance difference between every two adjacent PDs is ; that is, the zero signals detected and output by the eight PDs can cover the entire period intersected by the A and B signals, for example, taking the intersection point of the falling edge of the A signal and the rising edge of the B signal as an example, in an ideal case, the zero signal wave peak detected by PD1 is located at the intersection point, and the zero signal wave peaks detected by PD2, PD3, PD4, PD5, PD6, PD7 and PD8 are located at .

[0010] The transimpedance amplifier (TIA) in the transimpedance amplifier (TIA) array (3) in the device can be any one of a basic feedback type transimpedance amplifier (TIA), a double-input transimpedance amplifier (TIA), a differential transimpedance amplifier (TIA), and a variable gain transimpedance amplifier (TIA), which functions to convert the photocurrent signal generated by the zero signal detection photodiode (PD) array (2) into a voltage signal and output; each TIA in the transimpedance amplifier (TIA) array (3) is connected to a single PD in the zero signal detection photodiode (PD) array (2).

[0011] The switch unit array (4) in the device can be any one of a digital switch unit, an analog switch unit, a field effect transistor switch unit, a CMOS switch unit, and an electronic switch unit, which mainly functions to selectively output different phase zero signals PD in the zero signal detection photodiode (PD) array (2) under the control of the control switching circuit (5).

[0012] The control switching circuit module (5) in the device is composed of a selection input interface, a selection logic circuit, a driving and buffering circuit, an output interface, etc., and its main function is to decode the received control signal according to the control signal of the external control device or system, generate a corresponding control signal to drive the control switch unit array (4), and select and output the corresponding mode signal (such as zero signals PD1 to PD8). The selected zero signal is transmitted to the subsequent processing module of the chip or external equipment through the output interface for subsequent signal processing and other operations.

[0013] The photoelectric encoder chip (6) in the device can be any one of a transmissive photoelectric encoder chip or a reflective photoelectric encoder chip. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 It is a kind of zero phase switchable photoelectric encoder chip device schematic diagram, the device is composed of incremental code channel photodiode (PD) array (1), zero signal detection photodiode (PD) array (2), transimpedance amplifier (TIA) array (3), switch unit array (4), control switching circuit (5), photoelectric encoder chip (6).

[0015] Figure 2 It is an embodiment schematic diagram of a zero phase switchable photoelectric encoder chip device, which is composed of incremental code channel photodiode (PD) array (1), zero signal detection photodiode (PD) array (2), transimpedance amplifier (TIA) array (3), switch unit array (4), control switching circuit (5), photoelectric encoder chip (6), control signal module (7).

[0016] Figure 3is the phase relationship and output schematic diagram of the standard zero signal and the incremental A and B signals of the photoelectric encoder chip in the embodiment application.

[0017] Figure 4 is the phase relationship and output schematic diagram of the standard zero signal and the incremental A and B signals of the photoelectric encoder chip in the embodiment application.

[0018] Figure 5 is the phase relationship and output schematic diagram of the standard zero signal and the incremental A and B signals of the photoelectric encoder chip in the embodiment application. DETAILED DESCRIPTION

[0019] The application will be further described below in conjunction with specific embodiments.

[0020] Embodiment one: Figure 2 An embodiment schematic diagram of a zero-searching phase switchable photoelectric encoder chip device is given, which is composed of an incremental code channel photoelectric diode PD array (1), a zero signal detection photoelectric diode PD array (2), a trans-impedance amplifier TIA array (3), a switch unit array (4), a control switch circuit (5), a photoelectric encoder chip (6), and a control signal module (7). When the incremental code channel photoelectric diode PD array (1) receives an optical signal in the application process, two groups of sine and cosine photoelectric current signals A and B with a period of T and a phase difference of 90° are generated. The zero signal detection photoelectric diode PD array (2) is composed of eight photoelectric diodes PD1, PD2, PD3, PD4, PD5, PD6, PD7, and PD8 with a distance difference of When the zero signal detection photoelectric diode PD array (2) detects a zero signal, the zero photoelectric current signal wave peaks detected by PD1, PD2, PD3, PD4, PD5, PD6, PD7, and PD8 will have a fixed The phase difference, the photocurrent signal generated by the zero-position signal detection photodiode PD array (2) will be synchronously output to the transimpedance amplifier TIA array (3). The PD in the zero-position signal detection photodiode PD array (2) is connected to a single transimpedance amplifier TIA in the transimpedance amplifier TIA array (3). The transimpedance amplifier TIA array (3) processes and amplifies the photocurrent signal generated by the zero-position signal detection photodiode PD array (2) and outputs a voltage signal. When the photoelectric encoder chip (6) does not have mechanical errors, installation errors with the code disk, alignment errors or other problems during the application process, the control signal module (7) will output a 000 encoded control signal to the control switching circuit (5). The control switching circuit (5) decodes the received control signal according to the control signal from the control signal module (7) and generates a corresponding control signal to drive the control switch unit array (4). The zero-position PD1 signal in the zero-position signal detection photodiode PD array (2) is selected for output. At this time, the phase relationship between the zero-position signal and the incremental A and B signals in the output signal meets the signal processing requirements, such as Figure 4 As shown, it can be used for subsequent signal processing operations.

[0021] When the photoelectric encoder chip (6) experiences mechanical errors, installation errors with the code disk, alignment errors, or other problems during application, the following will occur: Figure 5 The problem of phase deviation between the zero-position signal and the incremental A and B signals is addressed. If the zero-position PD1 signal is still output, the output signal processing requirements cannot be met. The 001 encoded signal can be output to the control switching circuit (5) through the control signal module (7). The control switching circuit (5) decodes the received control signal according to the control signal of the control signal module (7) and generates the corresponding control signal to drive the control switch unit array (4). The zero-position PD2 signal in the zero-position detection photodiode PD array (2) is selected for output. At this time, the phase relationship between the zero-position signal and the incremental A and B signals meets the signal processing requirements and can be used for subsequent signal processing operations. This zero-position phase switchable photoelectric encoder chip device can effectively avoid the phase deviation problem between the zero-position signal and the incremental A and B signals caused by many mechanical errors in the application of the photoelectric encoder chip (6). Through the zero-position PD with 8 uniform phase difference, the zero-position efficiency of the whole system and the fault problem caused by the failure of a single photodiode can also be effectively improved. This effectively improves the fault tolerance and reliability of the photoelectric encoder chip in the application process and enhances the overall accuracy of the entire photoelectric encoder system.

Claims

1. A zero-seeking phase switchable optoelectronic encoder chip device, characterized by: The device is composed of an incremental code channel photodiode PD array (1), a zero signal detection photodiode PD array (2), a trans-impedance amplifier TIA array (3), a switch unit array (4), a control switching circuit (5), and a photoelectric encoder chip (6). When the incremental code channel photodiode PD array (1) detects an optical signal, it generates two sets of sine and cosine changing photocurrent signals with a period of T. When the zero-position signal detection photodiode PD array (2) detects a zero-position optical signal, the peak of the zero-position photocurrent signal output by PD1, PD2, PD3, PD4, PD5, PD6, PD7, and PD8 has a fixed peak. The phase difference, the photocurrent signal generated by the zero-position signal detection photodiode PD array (2) will be synchronously output to the transimpedance amplifier TIA array (3). The photodiode in the zero-position signal detection photodiode PD array (2) is connected to a single transimpedance amplifier TIA in the transimpedance amplifier TIA array (3). The transimpedance amplifier TIA array (3) processes and amplifies the photocurrent signal generated by the zero-position signal detection photodiode PD array (2) and outputs a voltage signal; then it is output to the control switching circuit (5) through the switching unit array (4). The control switching circuit (5) decodes the received control signal according to the control signal of the external control device or system, generates the corresponding control signal to drive the control switching unit array (4), selects and outputs the corresponding mode signal. The mode signal is the zero-position signal. The selected zero-position signal is transmitted to the subsequent processing module of the chip or external device through the output interface for subsequent signal processing operations. The zero-phase switchable photoelectric encoder chip device effectively improves the zero-seeking efficiency of the photoelectric encoder chip in the application process, effectively avoids the phase mismatching problem between the zero signal and the incremental signal caused by the installation error and alignment error of the photoelectric encoder chip and the code disc, and the failure problem caused by the single photodiode failure, and effectively improves the fault tolerance and reliability of the system through the phase relationship switching function of the zero signal and the incremental signal, and improves the overall precision of the entire photoelectric encoder system. The photodiode structure in the incremental code channel photodiode PD array (1) is any one of a PN photodiode and a PIN photodiode, which functions to receive the light spot signal transmitted or reflected by the code disc and convert it into a photocurrent signal; the single photodiode outputs two sets of differential sine and cosine change period T photocurrent signals during the rotation of the code disc. The photodiode structure in the zero signal detection photodiode array (2) is any one of PN type photodiode and PIN type photodiode, which is composed of 8 photodiodes, respectively PD1, PD2, PD3, PD4, PD5, PD6, PD7, PD8, and the distance difference between every two adjacent photodiodes is ; that is, the zero signal detection output by the 8 photodiodes covers the whole period intersected by the A and B signals.

2. A zero-seeking phase switchable optical encoder chip set as claimed in claim 1, characterized in that: The trans-impedance amplifier TIA in the trans-impedance amplifier TIA array (3) in the device is any one of a basic feedback trans-impedance amplifier, a double-input trans-impedance amplifier, a differential trans-impedance amplifier, and a variable gain trans-impedance amplifier, which functions to convert the photocurrent signal generated by the zero signal detection photodiode PD array (2) into a voltage signal and output it; each trans-impedance amplifier in the trans-impedance amplifier TIA array (3) is single-connected with the photodiode in the zero signal detection photodiode PD array (2).

3. A zero-seeking phase switchable optical encoder chip set as claimed in claim 1, characterized in that: The switch unit array (4) in the device is any one of a digital switch unit, an analog switch unit, a field effect transistor switch unit, a CMOS switch unit, and an electronic switch unit, which functions to selectively output different phase zero signals in the zero signal detection photodiode PD array (2) under the control of the control switching circuit (5).

4. A zero-seeking phase switchable optical encoder chip set as claimed in claim 1, characterized in that: The control switching circuit module (5) is composed of a selection input interface, a selection logic circuit, a driving and buffering circuit, and an output interface, which functions to decode the received control signal according to the control signal of the external control device or system, generate a corresponding control signal to drive and control the switch unit array (4), select and output the corresponding mode signal, and transmit the selected zero signal to the subsequent processing module of the chip or the external device through the output interface for subsequent signal processing operation.

5. A zero-seeking phase switchable optical encoder chip set as claimed in claim 1, characterized in that: The photoelectric encoder chip (6) is any one of a transmission type photoelectric encoder chip or a reflection type photoelectric encoder chip.

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