A method for automatically setting a preheating cycle of a storage medium

By automatically setting the warm-up cycle of NAND FLASH storage devices, the problem of difficulty in signal alignment during high-speed operation is solved, and high-performance and low-read errors are achieved.

CN119785860APending Publication Date: 2025-04-08SHANDONG SINOCHIP SEMICON CO LTD
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Patent Information

Application Number
CN202411958171.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-08

AI Technical Summary

Technical Problem

When existing NAND FLASH storage devices are running at high speed, it is difficult to effectively align signals, resulting in read errors, and inappropriate warm-up cycle configuration will affect overall performance.

Method used

Through a method of automatically setting the preheating cycle, including initialization, monitoring the LDPC error correction capability, adjusting the preheating cycle, establishing a preheating period table and dynamic adaptation, ensuring that the preheating cycle is always appropriate when the storage device is running under different conditions.

Benefits of technology

It realizes signal alignment when the storage device is running at high speed, reduces read errors, and ensures that the storage device always operates in the optimal state under different conditions to meet high performance requirements.

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Abstract

The present invention discloses a method for automatically setting the preheating cycle of a storage medium. First, the preheating cycle is initialized and the storage device is judged to enter the running state. The preheating cycle under different conditions is collected, and a preheating cycle table is established. After running for a period of time, the preheating cycle table is used to adapt the current device running state. When there is no preheating cycle data that meets the current conditions or the error correction fails, the preheating cycle table is re-measured under the current conditions and updated. The method described in the present invention can replace the current use of the preheating cycle in the storage device.
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Description

Technical Field

[0001] The invention relates to the field of storage data transmission, and in particular to a method for automatically setting a preheating period of a storage medium. Background Art

[0002] As a non-volatile memory device, NAND FLASH is widely used in electronic devices. In order to support high-speed operation, NAND FLASH provides a preheating mechanism to support high-speed operation.

[0003] The warm-up mechanism optimizes data transfer performance by performing preliminary data read and write operations. These warm-up cycles are optional for data output and data input operations, and if enabled, their configuration values ​​do not need to be the same. This means that the number of warm-up cycles for read operations can be set independently of the number of warm-up cycles for write operations to meet high performance requirements.

[0004] Different warm-up cycles are suitable for different transmission rates. A cycle that is too short may not have a warm-up effect when running at high speed, causing signal alignment errors and a large number of read errors. A cycle that is too long may affect the performance of the overall storage device. Summary of the invention

[0005] The object of the present invention is to provide a method for automatically setting a preheating period of a storage medium, which can not only support signal alignment under high-speed operation of a storage device, but also meet high performance requirements.

[0006] In order to achieve the above-mentioned purpose, the present invention is implemented through the following technical solutions.

[0007] A method for automatically setting a preheating cycle of a storage medium comprises the steps of: S1, preheating cycle start initialization; S2, the storage device enters the running state; S3, collecting preheating cycles under different conditions and establishing a preheating cycle table; S4. Adapt using the preheating period table according to the life cycle of the address used by the current storage device; S5. If there is no preheating cycle data that meets the current conditions during the current operation, or if the preheating cycle table adaptation value fails to be used, the preheating cycle table is re-measured under the current conditions and updated.

[0008] Further, step S1 includes: NFC initialization, EFC initialization, warmup preheating cycle initial value configuration and Nand initialization, and the warmup preheating cycle initial value is configured to 0.

[0009] Further, step S2 also includes: confirming whether the current preheating cycle is appropriate by monitoring whether the current LDPC can perform error correction normally, if the error correction can be performed normally, the storage device operates normally, and recording the current read and write cycle value into the preheating cycle corresponding table; if the error correction fails, entering the preheating cycle adjustment step; The preheat cycle adjustment steps include: Separate the read and write directions, and first adjust the warm-up period in the read direction; After setting the step size, increase the warm-up period value from low to high each time and reconfigure the warm-up period until the LDPC error correction verification is normal.

[0010] Furthermore, the different conditions in step S3 include life cycle and data retention time. The preheating period table uses the number of erase and write times in the life cycle as the horizontal axis and the data retention time of the Nand as the vertical axis.

[0011] Furthermore, the different conditions in step S3 also include read interference conditions and IO rate conditions as vertical coordinates.

[0012] Furthermore, the different conditions in step S3 also include temperature, and different preheating period tables are updated under different temperature conditions.

[0013] The advantages of the present invention are: the method described in the present invention can replace the current use of the preheating cycle in the storage device. The preheating cycle is dynamically and automatically configured during operation, so that the storage device always works in the optimal state. It can not only align the signals of the storage device under high-speed operation, but also meet the high performance requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a flow chart of a method for automatically setting a preheating period of a storage medium according to Embodiment 1 of the present invention; Figure 2 This is a preheating cycle correspondence table of Example 2 of the present invention. DETAILED DESCRIPTION

[0015] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0016] Example 1 A method for automatically setting the preheating cycle of a storage medium, please refer to Figure 1 , including the steps of: S1. Start initialization with the default warmup cycle, including NFC initialization, EFC initialization, warmup cycle initial value configuration and Nand initialization. The warmup cycle initial value is configured to 0.

[0017] S2. The storage device enters the running state and confirms whether the current preheating cycle is appropriate by monitoring whether the current LDPC can correct errors normally. If the error correction can be performed normally, the storage device operates normally and records the current read and write cycle values ​​in the preheating cycle corresponding table; if the error correction fails, enter the preheating cycle adjustment step.

[0018] The warm-up cycle adjustment follows the principle of read-write separation and from low to high, including the following steps: First, adjust the preheating cycle in the read direction, set the step size to 2, increase the preheating cycle value from low to high each time, reconfigure the preheating cycle until the LDPC error correction verification is normal, and then record the current read and write cycle value in the preheating cycle corresponding table.

[0019] S3. Collect the warm-up cycles under different IO rates, life cycles and data retention times. The warm-up cycle table uses the number of erase and write times in the life cycle as the horizontal axis, and the Nand data retention time, read interference, and IO rate as the vertical axis. Establish a warm-up cycle table and continuously record and update it during operation.

[0020] S4. After running for a period of time, use the preheating cycle table to adapt to the current equipment operating status.

[0021] S5. If there is no preheating cycle data that meets the current conditions during the current operation, the above steps are used for measurement, otherwise the corresponding data is directly used for configuration.

[0022] S6. If error correction fails when using the preheating cycle value, re-monitor the current conditions and update the preheating cycle table.

[0023] Example 2 Please refer to Figure 2 , this embodiment discloses a preheating period table.

[0024] The number of erase and write times on the horizontal axis is 0-1500 times for the first level, and increases by one level for every 1000 times thereafter; the data retention time on the vertical axis is divided into 0-9 days, 10-27 days, 28-45 days, 46-63 days, 64-81 days, and 82-90 days, and the IO rate is divided into 0-300M, 300M-1200M, and 1200M-2400M.

[0025] After running for a period of time, the warm-up period table is used to adapt the current device operation status. According to the life cycle of the address used by the current storage device, the warm-up period table is used for adaptation, and the addressing is performed according to the erase and write times of the current storage device being less than 1500 times, between 1500-2500 times, between 2500-3500 times, etc.

[0026] After the addressing of the number of erase and write times is completed, the preheating period table is adapted according to the data retention time of the current storage device, and the addressing is performed according to the data retention time of the current storage device. The time used here is at 40 degrees Celsius. At different temperatures, the time conversion needs to be performed according to the characteristics of the storage device.

[0027] Finally, the preheating cycle table is adapted according to the operating rate of the storage device. The preheating cycle values ​​in the table are adapted under different conditions such as 0-300M, 300-1200M, and 1200-2400M IO rates.

[0028] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for automatically setting a preheating period of a storage medium, characterized in that: Includes steps: S1, preheating cycle start initialization; S2, the storage device enters the running state; S3, collecting preheating cycles under different conditions and establishing a preheating cycle table; S4. Adapt using the preheating period table according to the life cycle of the address used by the current storage device; S5. If there is no preheating cycle data that meets the current conditions during the current operation, or if the preheating cycle table adaptation value fails to be used, the preheating cycle table is re-measured under the current conditions and updated.

2. The method for automatically setting the preheating period of a storage medium according to claim 1, characterized in that: The step S1 includes: NFC initialization, EFC initialization, warmup preheating cycle initial value configuration and Nand initialization, and the warmup preheating cycle initial value is configured to 0.

3. The method for automatically setting the preheating period of a storage medium according to claim 1, characterized in that: The step S2 further includes: confirming whether the current preheating cycle is appropriate by monitoring whether the current LDPC can perform normal error correction; if the error correction can be performed normally, the storage device operates normally, and recording the current read / write cycle value into the preheating cycle corresponding table; if the error correction fails, entering the preheating cycle adjustment step; The preheat cycle adjustment steps include: Separate the read and write directions, and first adjust the warm-up period in the read direction; After setting the step size, increase the warm-up period value from low to high each time and reconfigure the warm-up period until the LDPC error correction verification is normal.

4. The method for automatically setting the preheating period of a storage medium according to claim 1, characterized in that: The different conditions in step S3 include life cycle and data retention time. The preheating period table uses the number of erases and writes in the life cycle as the horizontal axis and the data retention time of Nand as the vertical axis.

5. The method for automatically setting the preheating period of a storage medium according to claim 4, characterized in that: The different conditions in step S3 also include read disturbance conditions and IO rate conditions as vertical coordinates.

6. The method for automatically setting the preheating period of a storage medium according to claim 4, characterized in that: The different conditions in step S3 also include temperature, and different preheating period tables are updated under different temperature conditions.