AlN-HTCC ceramic substrate heterogeneous integrated film metallization RDL method

CN119786350APending Publication Date: 2025-04-08NO 43 INST OF CHINA ELECTRONICS TECH GRP CETC
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Patent Information

Application Number
CN202411771649.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-04
Publication Date
2025-04-08

AI Technical Summary

Technical Problem

AlN-HTCC ceramic substrates have limitations in the accuracy and complexity of conductor layer wiring, and it is difficult to meet high-end packaging needs, such as high I/O density, small package size, excellent electrical performance and effective thermal management.

Method used

Using heterogeneous integrated film metallization RDL technology, a multi-layer metal film and insulating dielectric layer is prepared on an AlN-HTCC ceramic substrate, and the signal pins are redistributed to achieve high-density wiring interconnection. The specific steps include preparing a metal seed layer, forming a metal wiring layer, preparing an insulating medium layer, and performing electroplating on the back and front of the substrate respectively.

Benefits of technology

It improves metallization dimensional accuracy, enhances film layer reliability, realizes high-density wiring interconnection, improves package integration and device thermoelectric performance, and meets the requirements of high-density large-scale high-speed signal interconnection.

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Abstract

The invention discloses an AlN-HTCC ceramic substrate heterogeneous integrated thin film metallization RDL method. The method comprises the following steps that a substrate back face first metal seed layer and a substrate front face metal seed layer are prepared on the two faces of an AlN-HTCC ceramic substrate respectively; preparing the first metal seed layer on the back of the substrate to form a first metal wiring layer on the back of the substrate, and then preparing an insulating dielectric layer and a second metal seed layer on the back of the substrate in sequence on the surface of the first metal wiring layer; carrying out double-sided electroplating on the ceramic substrate; preparing a second metal wiring layer on the back surface of the substrate from the electroplated metal layer on the back surface of the substrate; and preparing the electroplated metal layer at the front position of the substrate to form a substrate front metal wiring layer. According to the invention, the heterogeneous integrated thin film metallization RDL of the AlN-HTCC ceramic substrate is realized, the size precision is improved, the problems of large alignment deviation of the metal wiring layer and poor reliability of the insulating dielectric layer are solved, and the high-density large-scale high-speed signal interconnection requirement is met.
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Citation Information

Patent Citations

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