Coaxial feed type energy selection protection antenna

Abstract

The invention discloses a coaxial feed type energy selection protection antenna, and belongs to the technical field of wireless communication. The antenna comprises a coaxial feed probe, an upper-layer dielectric substrate and a lower-layer dielectric substrate, the coaxial feed probe passes through the upper-layer dielectric substrate and the lower-layer dielectric substrate; at least one pair of metal bonding pad patches is laid on the lower dielectric substrate; each pair of metal bonding pad patches comprises a near-end metal bonding pad patch close to the coaxial feed probe and a far-end metal bonding pad patch far away from the coaxial feed probe; the near-end metal bonding pad patch is tightly connected with the coaxial feed probe; a gap for welding a semiconductor device is reserved between the near-end metal bonding pad patch and the corresponding far-end metal bonding pad patch; the upper dielectric substrate is provided with a dielectric hollow area used for protecting the semiconductor device. According to the coaxial feed type energy selection protection antenna, on the premise that normal work of the coaxial feed type antenna is not affected, electromagnetic protection on rear-end electronic information equipment under the condition of high irradiation is ensured.

Description

Technical Field

[0001] The invention belongs to the technical field of wireless communications, and in particular relates to a coaxial feeding type energy selective protection antenna. Background Art

[0002] With the continuous development of wireless communication technology, the electromagnetic environment is becoming increasingly complex. Electronic information equipment is facing the threat of high-intensity electromagnetic radiation fields. How to achieve electromagnetic protection for electronic information systems while ensuring their normal operation has become an urgent problem to be solved. Antennas, as the RF front end of electronic information systems, are the main channel for converting electromagnetic fields in free space into guided waves in microwave circuits. They generally have the characteristics of high receiving efficiency and large gain. If high-intensity radiation fields are coupled into electronic information systems from the antenna end, surge voltages and currents are likely to be generated, causing great damage or destruction to the electronic information systems.

[0003] At present, the energy domain protection methods for electronic information systems mainly include energy selective protection covers, energy selective protection antennas and circuit-level energy selective protection devices. The means to realize energy selective protection antennas are mostly to load semiconductor devices on microstrip feeder structures to achieve adaptive strong electromagnetic protection.

[0004] Due to the limitations of equipment use conditions and space environment, antenna design needs to comprehensively consider indicators such as volume, dielectric loss, peak gain, and external interface. At present, conformal microstrip antennas are mostly used for wireless sensor network equipment. Microstrip antennas are formed by laying a thin conductor patch on a dielectric substrate with a conductor ground plane. They are fed by microstrip lines or coaxial lines to excite a radio frequency electromagnetic field between the conductor patch and the ground plane, and radiate outward through the gaps around the patch and the ground plane. Compared with other antennas, microstrip antennas have the characteristics of low profile, small size, and easy conformal design with the surface of carriers such as satellites.

[0005] In view of the design requirements of high mechanical strength antennas and exposed antennas fixed on the periphery of the device, coaxial feed patch antennas are generally used, and the antenna floor position is fed through the dielectric substrate through the coaxial line to ensure the stability of the front structure of the antenna patch. However, since the metal feed line of the coaxial line feed antenna vertically passes through the dielectric substrate, there is no space around the feed line to install an electromagnetic protection structure, and it is also impossible to achieve electromagnetic protection by modifying the patch above the dielectric substrate and the grounding plate structure below. There is little space for structural improvement design, and there is still no mature coaxial feed protection antenna design solution. Summary of the invention

[0006] The object of the present invention is to provide a coaxially fed energy selective protection antenna, which can ensure electromagnetic protection of back-end electronic information equipment under high radiation conditions without affecting the normal operation of the coaxially fed antenna.

[0007] In order to achieve the above object, the present invention adopts the following technical solutions:

[0008] A coaxial feeding type energy selective protection antenna comprises a coaxial feeding probe 4, wherein the coaxial feeding type energy selective protection antenna comprises an upper dielectric substrate 1-1 and a lower dielectric substrate 1-2;

[0009] The coaxial feeding probe 4 passes through the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2;

[0010] At least one pair of metal pad patches is provided on the lower dielectric substrate 1-2; each pair of metal pad patches includes a proximal metal pad patch 5-1 close to the coaxial feeding probe and a distal metal pad patch 5-2 far away from the coaxial feeding probe; the proximal metal pad patch 5-1 is tightly connected to the coaxial feeding probe 4; a gap for welding a semiconductor device 6 is left between the proximal metal pad patch 5-1 and the corresponding distal metal pad patch 5-2;

[0011] The upper dielectric substrate 1 - 1 is provided with a dielectric hollow region 3 for protecting the semiconductor device 6 .

[0012] Furthermore, the medium hollow area 3 is a cubic area.

[0013] Further, the number of the medium hollow area 3 is 1;

[0014] The dielectric hollow area 3 corresponds to the position of the semiconductor device 6 .

[0015] Furthermore, the medium hollow area 3 is multiple;

[0016] Each dielectric hollow region 3 corresponds to the position of the corresponding semiconductor device 6 one by one.

[0017] Furthermore, the metal pad patch is in a rectangular shape.

[0018] Furthermore, the number of pairs of the metal pad patches is 4 pairs.

[0019] Furthermore, among the four proximal metal pad patches 5 - 1 , the included angle between two adjacent proximal metal pad patches 5 - 1 is 90°.

[0020] Furthermore, a grounding metal via 8 is provided between each remote metal pad patch 5 - 2 and the metal ground plate 7 ;

[0021] The upper end of each grounding metal via 8 is connected to the corresponding remote metal pad patch 5 - 2 ; the lower end of each grounding metal via 8 is connected to the metal ground plate 7 .

[0022] Furthermore, the upper dielectric substrate 1 - 1 and the lower dielectric substrate 1 - 2 are tightly connected by a multi-layer board lamination process.

[0023] Furthermore, the upper dielectric substrate 1 - 1 and the lower dielectric substrate 1 - 2 have the same thickness.

[0024] In summary, the technical solution of the present invention has the following technical effects:

[0025] The present invention divides the dielectric substrate in the existing coaxial feed type patch protection antenna into an upper and lower two-layer structure, namely, an upper dielectric substrate and a lower dielectric substrate, and then lays a metal pad patch (including a proximal metal pad patch and a corresponding distal metal pad patch) on the upper surface of the lower dielectric substrate, and leaves a gap for welding semiconductor devices between the proximal metal pad patch and the corresponding distal metal pad patch, and then through the hollowing (i.e., the dielectric hollowing area) opened at the corresponding position of the upper dielectric substrate, through the dielectric hollowing area to ensure that there is enough height space to protect the semiconductor device, so as to achieve the original coaxial feed type patch antenna without changing the size and the frequency band of the antenna. On the basis of having little impact on performance parameters such as power and gain, an electromagnetic protection structure is added to ensure electromagnetic protection of the electronic information system under high radiation conditions while ensuring its normal operation, thereby enhancing the strong electromagnetic protection capability of the antenna itself and effectively curbing the threat of high-intensity irradiated electromagnetic waves; the coaxially fed energy selective protection antenna of the present invention effectively protects semiconductor devices, avoids exposure of semiconductor devices to free space, and ensures the stability of the antenna protection structure; the coaxially fed energy selective protection antenna of the present invention has a protection efficiency of up to 21.7dB, realizes the integrated design of the electromagnetic protection structure and the coaxially fed antenna, and reduces the cross-sectional volume of the antenna system. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 This is a schematic diagram of the structure of the coaxial feed type energy selective protection antenna of the present invention;

[0028] Figure 2 It is a schematic diagram of the structure of an existing coaxial feed type patch antenna;

[0029] Figure 3 It is a schematic diagram of the S(1,1) curve of the existing coaxial feed type patch antenna;

[0030] Figure 4 The directional pattern of the existing coaxial feed patch antenna

[0031] Figure 5 It is a schematic diagram of the S(1,1) curve of the coaxial feeding energy selective protection antenna of the present invention;

[0032] Figure 6 The directional pattern of the coaxial feed type energy selective protection antenna of the present invention is

[0033] Figure 7 (a), (b), (c) and (d) are respectively the metal radiation patch, metal ground plate, protection structure area and isometric view of the coaxial feed type energy selective protection antenna of the present invention;

[0034] Figure 8 It is a schematic diagram of S-curve comparison between the normal working state and the protection state of the coaxial feeding energy selective protection antenna of the present invention;

[0035] Fig. 9 A schematic diagram showing a comparison of the directional diagrams of the coaxial feed type energy selective protection antenna of the present invention in a normal working state and a protection state;

[0036] Fig.10 The center direction of the normal working state and the protection state of the coaxial feeding type energy selection protection antenna of the present invention ( θ=0) gain frequency curve comparison diagram;

[0037] Fig.11 It is a schematic diagram of an equivalent circuit of the coaxial feeding energy selective protection antenna of the present invention under low intensity radiation and high intensity radiation. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0039] The original coaxial feed patch antenna is simulated. Taking the S(1,1) parameter -10dB as the boundary, its operating frequency band is 2.34-2.47GHz, and its bandwidth is about 130MHz. Its S(1,1) curve is as follows: Figure 3 Select the central operating frequency of 2.41GHz to view the antenna's directional pattern characteristics. Direction diagram Figure 4 As shown in the figure, the maximum gain of the main lobe reaches 7.5dB. Then an electromagnetic protection structure is installed on the basis of its structure. The design requirement is to minimize the impact on the antenna frequency band, gain and other performance parameters before and after the installation of the electromagnetic protection structure.

[0040] Since the coaxial feeding probe of the original coaxial feeding patch antenna vertically penetrates the dielectric substrate from the metal ground plate position and is connected to the metal radiation patch 9, the coaxial feeding probe is surrounded by the dielectric substrate 1 material, and the electromagnetic protection function of this antenna cannot be designed using the existing energy selective protection antenna design method.

[0041] Based on the above, this embodiment provides a coaxial feeding type energy selective protection antenna, referring to Figure 1 , including a coaxial feeding probe 4, the coaxial feeding type energy selective protection antenna includes an upper dielectric substrate 1-1 and a lower dielectric substrate 1-2, that is, the dielectric substrate 1 of the existing coaxial feeding type patch antenna is divided into an upper dielectric substrate and a lower dielectric substrate, reference Figure 2 The coaxial feeding probe 4 passes through the upper dielectric substrate 1 - 1 and the lower dielectric substrate 1 - 2 .

[0042] Since the diode itself has a certain thickness, if two layers of dielectric substrates are stacked together through a multi-layer board pressing process, it is easy to damage the semiconductor device 6 due to the high mechanical strength. Therefore, in this embodiment, with the coaxial feeding probe 4 as the center, a cubic area of ​​a certain height and a certain width (i.e., a dielectric hollow area 3) is hollowed out on the upper dielectric substrate 1-1. The dielectric hollow area can be 6.6*6.6*0.5mm and can accommodate semiconductor devices 6 such as diodes) to provide beneficial protection for the semiconductor device 6. To avoid damage to the semiconductor device 6 (such as a diode) due to mechanical collision, the position of the dielectric hollow area 3 corresponds to the position of the semiconductor device 6. For example, when the number of dielectric hollow areas 3 is 1, the dielectric hollow area 3 corresponds to the position of the semiconductor device 6. When there are multiple dielectric hollow areas 3, each dielectric hollow area 3 corresponds to a semiconductor device 6, and the positions of the dielectric hollow areas and the semiconductor devices 6 are one-to-one corresponding.

[0043] The upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 of this embodiment are tightly connected by a multilayer board lamination process. The thickness of the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 are the same. The material of the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 is Teflom, the dielectric constant is 2.65, and the operating frequency band is 2.34 to 2.46 GHz.

[0044] At least one pair of metal pads is provided on the lower dielectric substrate 1-2 of the present embodiment to provide a position for welding a semiconductor device 6 (such as a PIN diode). Each pair of metal pads includes a proximal metal pad 5-1 close to the coaxial feeding probe and a distal metal pad 5-2 far from the coaxial feeding probe. A gap for welding the semiconductor device 6 is left between the proximal metal pad 5-1 and the corresponding distal metal pad 5-2. The proximal metal pad 5-1 is tightly connected to the coaxial feeding probe 4. The semiconductor device of the present embodiment is a PIN diode.

[0045] The shape of the metal pad patch in this embodiment is rectangular. When there are 4 pairs of metal pad patches, the angle between two adjacent proximal metal pad patches 5-1 among the 4 proximal metal pad patches 5-1 is 90°. A grounding metal via 8 is provided between each distal metal pad patch 5-2 and the metal ground plate 7, and the upper end of each grounding metal via 8 is connected to the corresponding distal metal pad patch 5-2. The lower end of each grounding metal via 8 is connected to the metal ground plate 7.

[0046] The gap in this embodiment is 0.3 mm, and the thickness of the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 is 3.1 mm. The model of the diode is MA4AGFCP910 of MACOM. Below the remote metal pad patch is a metal via, the upper end of the metal via is connected to the remote metal pad, and the lower end is connected to the metal ground plate. There are 4 grounding metal vias 8 in total, and the radius of the grounding metal via 8 is 0.5 mm.

[0047] The working mechanism of the coaxial feed type patch protection antenna protection structure of this embodiment is introduced below:

[0048] When the antenna receives electromagnetic wave signals for normal operation, the power of the working signal is small, and the induced voltage on the coaxial feeding probe is small, which is much smaller than the conduction threshold voltage of the diode. The diode is in the off state at this time and can be equivalent to a parallel capacitor. The equivalent capacitance of the diode is generally small, so the impact of the equivalent parallel capacitor on the antenna working frequency band can be ignored. At this time, the signal received by the antenna can enter the back end of the antenna normally.

[0049] When a high-intensity irradiation signal is incident on the antenna, the signal power is relatively large, and the induced voltage on the coaxial feeding probe 4 is large enough, which is greater than the conduction threshold voltage of the diode. The diode is in the on state at this time and is grounded through the remote metal pad patch 5-2 and the grounding metal via 8, which can be equivalent to a parallel resistor. The antenna input impedance is greatly changed due to the addition of the parallel resistor, the impedance is completely mismatched, and the high-intensity incident signal is almost completely reflected. At this time, the coaxial feeding type energy selective protection antenna structure has produced electromagnetic protection efficiency, which can effectively suppress the damage of high-intensity signals to the electronic information equipment at the rear end of the antenna.

[0050] After adding a protective structure to the original coaxial feed type patch antenna, the coaxial feed type energy selective protection antenna of this embodiment is simulated. Under normal working conditions, the working frequency band is 2.32 to 2.45 GHz. Figure 5 As shown, there is a 20MHz offset relative to the working frequency band of the original antenna, but the center working frequency of the original coaxial fed patch antenna 2.41GHz is still within the working frequency band of the protection antenna, so the slight frequency offset can be ignored.

[0051] The central operating frequency point 2.41 GHz of the original coaxial feed type patch antenna is selected to check the directional pattern characteristics of the coaxial feed type energy selective protection antenna of this embodiment. Direction diagram Figure 6 As shown, the maximum gain at the center of the main lobe is 7.34dB, which is 0.16dB lower than the gain of the original coaxial feed type patch antenna. Therefore, the effect of the coaxial feed type energy selective protection antenna structure of this embodiment on the performance of the original coaxial feed type patch antenna is almost negligible. It can be seen that after the protection structure is added to the antenna, the effect on the performance of the original coaxial feed type patch antenna is very small.

[0052] like Figure 7 As shown, it shows the detailed dimensional parameters of the coaxial fed energy selective protection antenna. Figure 7 (a) shows the size parameters of the plane where the metal radiation patch 9 is located, where l g is 60 mm, which is the side length of the dielectric substrate 1; l p is 35.5 mm, which is the side length of the square metal radiation patch 9; c is 3.8 mm, which is the length of the right-angled side of the metal radiation patch 9 ; R1 is 0.6 mm, which is the radius of the coaxial feeding probe 4 . Figure 7 (b) shows the dimensional parameters of the plane where the antenna metal ground plate 7 is located, where R2 is 1.4 mm, which is the outer radius of the air medium outside the coaxial feeding probe 4; R3 is 0.5 mm, which is the radius of the grounding metal via 8. Figure 7 (c) shows a top view of the protection structure area of ​​the middle layer of the coaxial feed type energy selective protection antenna, where the gap l gap 0.3 mm is the gap width between two metal pad patches, namely the proximal metal pad patch 5-1 and the corresponding distal metal pad patch 5-2, which is used for welding diodes; m is 1.2 mm, which is the side length of the far-end metal pad patch 5-2; n It is 1.2 mm, which is the side length of the proximal metal pad patch 5 - 1 close to the metal coaxial probe side. Figure 7(d) shows the isometric view of the coaxial feed type energy selective protection antenna, where h1 is 6.2 mm, which is the total thickness of the dielectric substrate 1; h2 is 3.1 mm, which is the thickness of the upper and lower layered dielectric substrates. The metal thickness in the design is 0.035 mm.

[0053] like Figure 8 As shown in the figure, it shows the S(1,1) curve comparison between the coaxial feed type energy selective protection antenna in normal working state and protection state. When a low-intensity radiation signal is incident on the antenna, the antenna maintains a normal working state. Taking the S(1,1) parameter -10dB as the boundary, its normal working frequency band is 2.32-2.45GHz and the bandwidth is 130MHz. When a high-intensity radiation signal is incident on the antenna, the diode in the protection structure becomes conductive and is equivalent to a resistor. The feed line is connected to the ground plane through a metal pad patch and a metal via. At this time, the S(1,1) parameter is close to 0dB in the normal working frequency band, and the high-intensity incident signal on the surface is almost completely reflected and cannot enter the back-end electronic information system, effectively ensuring the electromagnetic safety of the system.

[0054] like Fig. 9 As shown in the figure, at the 2.41GHz central operating frequency of the original antenna, the radiation pattern of the protection antenna in two working states is compared. In the normal working state, the center gain can reach a maximum of 7.3dB. In the protection state, the center gain is reduced to -14.4dB. It can be seen that at this working frequency, the protection efficiency of the coaxial feed patch protection antenna can reach 21.7dB, which has excellent strong electromagnetic protection capabilities.

[0055] like Fig.10 As shown, the center direction of the protection antenna in two working states ( The gain-frequency curve comparison diagram of the protection antenna with θ=0). In the normal working frequency band of 2.32-2.45GHz, the protection antenna has a protection efficiency greater than 20dB, indicating that it has a stable and strong electromagnetic protection capability in the entire working frequency band. At the working frequency of 2.41GHz, the protection efficiency can reach 21.7dB.

[0056] like Fig.11 As shown in the figure, the equivalent circuit diagram of the protective antenna under low-intensity radiation and high-intensity radiation is shown. C0 is a series capacitor, L0 is a series inductor, C1 is a parallel capacitor, L1 is a parallel inductor, and R1 is a parallel resistor. When a low-intensity electromagnetic wave is incident on the antenna, the diode is in the off state, which is equivalent to a capacitor C e When a high-intensity electromagnetic wave is incident on the antenna, the diode is in the on state, which is equivalent to a resistor R e .

[0057] In this embodiment, the dielectric substrate in the existing coaxial feed type patch protection antenna is divided into an upper and lower layer structure, i.e., an upper dielectric substrate and a lower dielectric substrate, and then a metal pad patch (including a proximal metal pad patch and a corresponding distal metal pad patch) is laid on the upper surface of the lower dielectric substrate, and a gap for welding semiconductor devices is left between the proximal metal pad patch and the corresponding distal metal pad patch, and then a hollow (i.e., a dielectric hollow area) is opened at a corresponding position of the upper dielectric substrate to ensure that sufficient height space is left to protect the semiconductor device, thereby achieving the goal of not changing the size of the original coaxial feed type patch antenna and the antenna frequency band. On the basis of having little impact on performance parameters such as power and gain, an electromagnetic protection structure is added to ensure electromagnetic protection of the electronic information system under high radiation conditions while ensuring its normal operation, thereby enhancing the strong electromagnetic protection capability of the antenna itself and effectively curbing the threat of high-intensity irradiated electromagnetic waves; the coaxially fed energy selective protection antenna of this embodiment effectively protects semiconductor devices, avoids exposure of semiconductor devices to free space, and ensures the stability of the antenna protection structure; the coaxially fed energy selective protection antenna of this embodiment has a protection efficiency of up to 21.7dB, realizing the integrated design of the electromagnetic protection structure and the coaxially fed antenna, and reducing the cross-sectional volume of the antenna system.

[0058] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification. The above embodiments only express several implementation methods of the present application, and their descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several deformations and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of this application shall be based on the attached claims.

Claims

1. A coaxial feeding type energy selective protection antenna, comprising a coaxial feeding probe (4), characterized in that: The coaxial feeding type energy selective protection antenna comprises an upper dielectric substrate (1-1) and a lower dielectric substrate (1-2); The coaxial feeding probe (4) passes through the upper dielectric substrate (1-1) and the lower dielectric substrate (1-2); At least one pair of metal pad patches is provided on the lower dielectric substrate (1-2); each pair of metal pad patches comprises a proximal metal pad patch (5-1) close to the coaxial feeding probe and a distal metal pad patch (5-2) far from the coaxial feeding probe; the proximal metal pad patch (5-1) is tightly connected to the coaxial feeding probe (4); a gap for welding a semiconductor device (6) is left between the proximal metal pad patch (5-1) and the corresponding distal metal pad patch (5-2); The upper dielectric substrate (1-1) is provided with a dielectric hollow area (3) for protecting the semiconductor device (6).

2. The coaxial feed type energy selective protection antenna according to claim 1, characterized in that: The medium hollow area (3) is a cubic area.

3. The coaxial feed type energy selective protection antenna according to claim 2, characterized in that: The number of the medium hollow area (3) is 1; The dielectric hollow area (3) corresponds to the position of the semiconductor device (6).

4. The coaxial feed type energy selective protection antenna according to claim 2, characterized in that: The medium hollow area (3) is multiple; Each dielectric hollow region (3) corresponds to the position of a corresponding semiconductor device (6) on a one-to-one basis.

5. The coaxial feed type energy selective protection antenna according to any one of claims 1 to 4, characterized in that: The metal pad patch is in a rectangular shape.

6. The coaxial feed type energy selective protection antenna according to claim 5, characterized in that: The number of pairs of the metal pad patches is 4.

7. The coaxial feed type energy selective protection antenna according to claim 6, characterized in that: Among the four proximal metal pad patches (5-1), the included angle between two adjacent proximal metal pad patches (5-1) is 90°.

8. The coaxial feed type energy selective protection antenna according to claim 7, characterized in that: A grounding metal via (8) is provided between each remote metal pad patch (5-2) and the metal grounding plate (7); The upper end of each grounding metal via (8) is connected to the corresponding remote metal pad patch (5-2); and the lower end of each grounding metal via (8) is connected to the metal grounding plate (7).

9. The coaxial feed type energy selective protection antenna according to claim 8, characterized in that: The upper dielectric substrate (1-1) and the lower dielectric substrate (1-2) are tightly connected through a multi-layer board pressing process.

10. The coaxial feeding type energy selective protection antenna according to claim 9, characterized in that: The upper dielectric substrate (1-1) and the lower dielectric substrate (1-2) have the same thickness.

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