High-power semiconductor laser capable of outputting circular light beams

Abstract

The invention relates to the technical field of high-power semiconductor laser design, and discloses a high-power semiconductor laser with circular light beam output, which comprises a first layer structure, a second layer structure and a third layer structure which are sequentially arranged from bottom to top, the first-layer structure comprises a semiconductor laser module, a semiconductor laser module assembly base and a first-layer shell, and the semiconductor laser module is composed of N identical semiconductor laser modules; two electrodes are arranged at the bottom end of the semiconductor laser module assembly base; the second-layer structure comprises a concave lens shell, and a double-sided concave optical lens is placed in the concave lens shell; the third layer structure comprises a concave lens and convex lens middle shell and a convex lens shell; a double-face convex optical lens is placed in the convex lens shell, and a plane lens is installed on the upper portion of the convex lens shell. According to the invention, the problems of heat dissipation, light beam collimation, mechanical stability and the like of the laser are effectively solved, and the reliability and expansibility of the laser system are improved.

Description

Technical Field

[0001] The invention relates to the technical field of high-power semiconductor laser design, and more specifically to a high-power semiconductor laser with circular light beam output. Background Art

[0002] In terms of heat dissipation, traditional high-power semiconductor laser designs mainly rely on single heat sinks, air cooling or thermoelectric cooling (TEC) technology. Heat sinks usually use high thermal conductivity materials to directly transfer heat to the outside, but the heat dissipation direction is single and the efficiency is limited; air cooling relies on external airflow to remove heat, but it is easily limited by ambient temperature and air volume, and it is difficult to meet the needs of high-power lasers; and although TEC can actively cool, its efficiency decreases as the power increases, and it also brings high costs and high energy consumption.

[0003] In optical collimation, traditional methods usually use a single spherical or cylindrical lens to correct beam divergence, but it is difficult to effectively collimate beams with large divergence angles. Alternatively, collimation is achieved through fiber coupling, but this requires extremely high alignment accuracy and has low coupling efficiency.

[0004] In terms of mechanical structure, traditional laser assembly mostly uses a single screw fixation or glue bonding. The structure is simple but easily affected by mechanical vibration and thermal expansion, resulting in optical alignment failure. At the same time, the complex manual assembly and fixing methods increase errors and maintenance difficulty.

[0005] In addition, traditional packaging designs are mostly integrated, with poor scalability and difficulty in adapting to rapidly developing application needs. Summary of the invention

[0006] In view of this, in response to the above situation, the present invention proposes a high-power semiconductor laser with circular beam output. By introducing microchannel cooling technology, modular optical component design, precision mechanical assembly and optimized electrical connection, it not only effectively solves the problems of heat dissipation, beam collimation and mechanical stability, but also improves the reliability and scalability of the system, reflecting the coordinated application of multidisciplinary technologies such as optoelectronics, thermal management, mechanics, materials science and system integration.

[0007] To achieve the above object, the present invention adopts the following technical solution:

[0008] A high-power semiconductor laser with circular beam output comprises a first layer structure, a second layer structure and a third layer structure which are arranged in sequence from bottom to top, and the three layers are integrally assembled and connected together;

[0009] The first layer structure includes a semiconductor laser module, a semiconductor laser module assembly base, and a first layer shell arranged above the semiconductor laser module assembly base. The semiconductor laser module is fixed on the upper surface of the semiconductor laser module assembly base and is composed of N identical semiconductor laser modules. The N semiconductor laser modules are electrically connected and arranged in a ring shape as a whole. Two electrodes are arranged at the bottom end of the semiconductor laser module assembly base. The two electrodes are respectively connected to the positive and negative electrodes of any one of the semiconductor laser modules to provide power for the entire device.

[0010] The second layer structure includes a concave lens housing, a concave lens platform is arranged inside the concave lens housing, and a double-concave optical lens is placed on the concave lens platform;

[0011] The third layer structure includes an intermediate shell between a concave lens and a convex lens and a convex lens shell arranged above the intermediate shell between the concave lens and the convex lens. A locking buckle 1 for limiting the movement of the double-sided concave optical lens is provided on the intermediate shell between the concave lens and the convex lens. A convex lens platform is provided inside the convex lens shell, and the double-sided convex optical lens is placed on the convex lens platform. A locking buckle 2 for limiting the movement of the double-sided convex optical lens is provided on the convex lens shell, and a plane lens is installed on the upper part of the convex lens shell.

[0012] Preferably, connection holes are opened on opposite sides of the edges of the first layer structure, the second layer structure and the third layer structure, and two first long screws are sequentially passed through two corresponding groups of connection holes in the three-layer structure, and the corresponding long screw matching nuts are locked at the bottom to complete the assembly connection of the three-layer structure.

[0013] Preferably, the semiconductor laser module is installed on a semiconductor laser fixing base; the side of the semiconductor laser module away from the center of the semiconductor laser module assembly base is defined as the lower side, and the two side areas of the lower side of the semiconductor laser module are two bonding areas respectively, and the electricity on the electrode passing through the semiconductor laser fixing base can be introduced into the two bonding areas; N oxygen-free copper heat sinks and N-1 isolation insulation areas are distributed on the left and right sides and the upper side of the semiconductor laser module, and the oxygen-free copper heat sinks and the isolation insulation areas are arranged at intervals. N semiconductor lasers corresponding to the oxygen-free copper heat sinks are provided on the semiconductor laser module, and each semiconductor laser is connected and fixed to the corresponding oxygen-free copper heat sink by lead-tin solder. The area where the lead-tin solder is located is the lead-tin solder area, and the lead-tin solder area is located on the entire oxygen-free copper heat sink.

[0014] Preferably, the semiconductor laser module is also provided with connecting gold wires and bonding area gold wires;

[0015] The connecting gold wire is introduced from the positive electrode of the bonding area to the first lead-tin solder area. The positive electrode of the first semiconductor laser corresponding to the first lead-tin solder area is connected to the second lead-tin solder area through the connecting gold wire, and then connected to the negative electrode of the first semiconductor laser. After one circle of connection, the positive electrode of the last semiconductor laser is connected to the negative electrode of the bonding area, completing the internal electrical connection of the single semiconductor laser module.

[0016] After the semiconductor laser module and the conductor laser module assembly base are installed and fixed, the gold wire of the bonding area is connected from the positive electrode of the bonding area of ​​the first semiconductor laser module to the negative electrode of the bonding area of ​​the next semiconductor laser module. After one circle of connection, the positive electrode of the bonding area of ​​the last semiconductor laser module is connected to the negative electrode of the bonding area of ​​the first semiconductor laser module, completing the electrical connection between N semiconductor laser modules.

[0017] Preferably, a laser module cooling liquid microchannel is provided inside the semiconductor laser module, and the two ports of the laser module cooling liquid microchannel are respectively the cooling liquid inlet and the cooling liquid outlet of the semiconductor laser module, and the cooling liquid inlet and outlet of the semiconductor laser module are located on the outer end surface of the lower side of the semiconductor laser module and are symmetrically opened; a module assembly base cooling liquid microchannel is provided inside the semiconductor laser module assembly base to form a plurality of laser module cooling liquid microchannels in series, and the two ports of the module assembly base cooling liquid microchannel are respectively the module assembly base cooling liquid inlet and the module assembly base cooling liquid outlet, and the module assembly base cooling liquid inlet and outlet are opened on the side wall of the semiconductor laser module assembly base and are connected to an external cooling liquid supply device.

[0018] Preferably, a mounting hole 1 is integrally formed on the semiconductor laser fixing base in the middle position of the two bonding areas and below the semiconductor laser fixing base, a corresponding mounting hole 2 is formed on the semiconductor laser module assembly base, and two second long screws pass through the corresponding upper and lower mounting holes 1 and 2 respectively to integrally install the semiconductor laser module and the semiconductor laser fixing base on the semiconductor laser module assembly base; the second long screws are made of copper material.

[0019] Preferably, two second long screws on one of the semiconductor laser modules are selected to be lengthened for use as electrodes, and the second mounting hole corresponding to the semiconductor laser module on the semiconductor laser module assembly base is opened, so that the electrode can be inserted into the first mounting hole from the second mounting hole opened at the outer edge to achieve electrical connection with the semiconductor laser module.

[0020] Preferably, the semiconductor laser in the semiconductor laser module is selected to be modularly designed including lasers made of GaAs, InP, and GaN semiconductor materials; the oxygen-free copper heat sink and the isolation insulation area are also modularly designed according to requirements, and are both adhered to the semiconductor laser fixing base through high-performance thermal conductive adhesive.

[0021] Preferably, the intermediate housing between the concave lens and the convex lens is replaced according to the focal length requirement between the concave lens and the convex lens, and is modularly designed.

[0022] Preferably, the edge of the plane lens is adhered to the upper port of the convex lens housing by means of a heat-conductive double-sided adhesive.

[0023] Compared with the prior art, the high-power semiconductor laser with circular beam output of the present invention has the following beneficial effects:

[0024] (1) In terms of optical alignment, the present invention introduces a combination of a biconcave concave lens and a biconvex convex lens, and achieves precise and stable optical alignment through modular housing and locking buckle fixation, thus overcoming the shortcomings of limited correction of traditional single lenses and complex fiber coupling.

[0025] (2) The present invention significantly improves the heat dissipation efficiency through microchannel cooling technology. The multi-directional circulation of the coolant in the module makes up for the deficiency of the unidirectional heat conduction of the traditional heat sink, while avoiding the problems of low air cooling efficiency and high TEC cost.

[0026] (3) The mechanical structure design of the present invention adopts a layered modular approach to separate the heat dissipation, optical calibration and beam shaping functions. The efficiency and stability of the overall assembly are improved by combining screws with locking buckles. At the same time, the system's ability to resist mechanical vibration is significantly enhanced, avoiding the problem of loosening caused by traditional fixing methods.

[0027] (4) The modular and standardized design of the present invention further enhances the reliability and scalability of the system, making the disassembly, maintenance and upgrade of the equipment more convenient. Compared with the traditional integrated packaging solution, it is more flexible and adaptable, and comprehensively improves the overall performance and practicality. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0029] Figure 1 This is a front view of the overall structure of a high-power semiconductor laser with circular light beam output according to the present invention.

[0030] Figure 2 This is an oblique side view of the overall structure of a high-power semiconductor laser with circular light beam output according to the present invention.

[0031] Figure 3 It is a front view of the first layer structure in the present invention.

[0032] Figure 4 It is a top view of the first layer structure in the present invention.

[0033] Figure 5 It is an oblique side view of the first layer structure in the present invention.

[0034] Figure 6 It is a front view of the semiconductor laser module in the present invention.

[0035] Figure 7 It is an oblique side view of the semiconductor laser module in the present invention.

[0036] Figure 8 It is a front view of the second layer structure in the present invention.

[0037] Fig. 9 It is an oblique side view of the second layer structure in the present invention.

[0038] Fig.10 It is a front view of the third layer structure in the present invention.

[0039] Fig.11 It is an oblique side view of the third layer structure in the present invention.

[0040] In the figure: 1-first layer structure, 2-second layer structure, 3-third layer structure, 4-connecting hole, 5-first long screw, 6-long screw matching nut, 7-semiconductor laser module assembly base, 8-first layer shell, 9-semiconductor laser module, 10-electrode, 11-concave lens shell, 12-concave lens platform, 13-double-sided concave optical lens, 14-middle shell between concave lens and convex lens, 15-convex lens shell, 16-locking buckle 1, 17-convex lens platform, 18-double-sided convex optical lens, 19-locking buckle 2, 20-plane lens, 2 1-semiconductor laser fixing base, 22-bonding area, 23-isolation insulation area, 24-oxygen-free copper heat sink, 25-semiconductor laser, 26-lead-tin solder area, 27-connecting gold wire, 28-bonding area gold wire, 29-laser module cooling liquid microchannel, 30-cooling liquid inlet of semiconductor laser module, 31-cooling liquid outlet of semiconductor laser module, 32-module assembly base cooling liquid microchannel, 33-module assembly base cooling liquid inlet, 34-module assembly base cooling liquid outlet, 35-installation hole one, 36-second long screw. DETAILED DESCRIPTION

[0041] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0042] In the description of the present invention, it is necessary to understand that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0043] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0044] Example:

[0045] The invention discloses a high-power semiconductor laser with circular light beam output, which involves multiple technical fields, including optoelectronic technology, thermal management technology, mechanical design and precision manufacturing, electrical and electronic technology, optical materials and packaging technology, and system integration and reliability engineering.

[0046] like Figure 1-Figure 11 As shown, a high-power semiconductor laser with circular beam output of the present invention comprises a first layer structure 1, a second layer structure 2, and a third layer structure 3 arranged in sequence from bottom to top, and the three layers of structures are integrally assembled and connected together.

[0047] The first layer structure 1 includes a semiconductor laser module, a semiconductor laser module assembly base 7 and a first layer shell 8 arranged above the semiconductor laser module assembly base 7. The semiconductor laser module is fixed on the upper surface of the semiconductor laser module assembly base 7 and is composed of N identical semiconductor laser modules 9. The N semiconductor laser modules 9 are electrically connected to each other and arranged in a ring shape as a whole. Two electrodes 10 are arranged at the bottom end of the semiconductor laser module assembly base 7. The two electrodes 10 are respectively connected to the positive and negative poles of any one of the semiconductor laser modules 9 to provide power for the entire device.

[0048] The second layer structure 2 includes a concave lens housing 11 , a concave lens platform 12 is provided inside the concave lens housing 11 , a double-concave optical lens 13 is placed on the concave lens platform 12 , and the double-concave optical lens 13 is used to collimate the light beam emitted by the semiconductor laser module.

[0049] The third layer structure 3 includes a middle shell 14 between a concave lens and a convex lens and a convex lens shell 15 arranged above the middle shell 14 between the concave lens and the convex lens. The middle shell 14 between the concave lens and the convex lens is provided with a locking buckle 16 for limiting the movement of the double-sided concave optical lens 13 on the concave lens platform 12 below; a convex lens platform 17 is provided inside the convex lens shell 15, and a double-sided convex optical lens 18 is placed on the convex lens platform 17. The convex lens shell 15 is provided with a locking buckle 2 19 for limiting the movement of the double-sided convex optical lens 18, and a plane lens 20 for facilitating light emission is installed on the upper part of the convex lens shell 15.

[0050] The number of semiconductor laser modules 9 in the present invention is adjusted according to their size and required power. Figure 4 As shown, eight identical semiconductor laser modules 9 are arranged in a ring shape and installed on a semiconductor laser module assembly base 7.

[0051] The first shell 8, the concave lens shell 11, the intermediate shell 14 between the concave lens and the convex lens, and the convex lens shell 15 in the present invention all have the functions of protection, moisture-proof and dust-proof.

[0052] In a further specific embodiment, the first layer structure 1, the second layer structure 2, and the third layer structure 3 are provided with connection holes 4 on opposite sides of the edges, and two first long screws 5 are sequentially passed through the two corresponding groups of connection holes 4 in the three-layer structure, and the corresponding long screw matching nuts 6 are locked at the bottom to complete the assembly connection of the three-layer structure. That is, the semiconductor laser module assembly base 7, the first layer shell 8, the concave lens shell 11, the concave lens and convex lens intermediate shell 14, and the convex lens shell 15 are provided with connection holes 4 on opposite sides of the edges, so that the long screws and nuts can pass through these bases and shells and assemble and connect them as a whole.

[0053] In a further specific embodiment, the semiconductor laser module 9 is integrally modularly mounted on a semiconductor laser fixing base 21; the side of the semiconductor laser module 9 away from the center of the semiconductor laser module assembly base is defined as the lower side, and the lower two side areas of the semiconductor laser module 9 are respectively two bonding areas 22, and a bonding module is arranged in the bonding area 22, and the electricity on the electrode 10 passing through the semiconductor laser fixing base 21 can be introduced into the two bonding areas 22; N oxygen-free copper heat sinks 24 and N-1 isolation insulation areas 23 are distributed on the left and right sides and the upper side of the semiconductor laser module 9, and the oxygen-free copper heat sinks 24 and the isolation insulation areas 23 are arranged at intervals, and N semiconductor lasers 25 corresponding to the oxygen-free copper heat sinks 24 are arranged on the semiconductor laser module 9, and each semiconductor laser 25 is connected and fixed to the corresponding oxygen-free copper heat sink 24 by lead-tin solder, and the area where the lead-tin solder is located is the lead-tin solder area 26, and the lead-tin solder area 26 is located on the entire oxygen-free copper heat sink 24, so as to facilitate the connection and fixation of semiconductor lasers 25 of different sizes. The oxygen-free copper heat sink 24 in the semiconductor laser module 9 is used to dissipate the heat generated by the semiconductor laser 25 , and the isolation insulating region 23 is used to isolate each semiconductor laser 25 to avoid electrical problems.

[0054] In this embodiment, nine semiconductor lasers 25, nine oxygen-free copper heat sinks 24, eight isolation insulation areas 23, and nine lead-tin solder areas 26 are distributed on the left and right sides and the upper side of a single semiconductor laser module 9, and two bonding areas 22 are distributed on the lower side. These semiconductor lasers 25, oxygen-free copper heat sinks 24, isolation insulation areas 23, lead-tin solder areas 26, and bonding areas 22 can all be modularly installed on a semiconductor laser fixing base 21.

[0055] The present invention can realize the free disassembly of the semiconductor laser 25 on the oxygen-free copper heat sink 24, thereby improving the output power and heat dissipation efficiency of the overall device.

[0056] Furthermore, the semiconductor laser module 9 is also provided with a bonding area gold wire 28 and a connecting gold wire 27 made of gold material.

[0057] The gold wire is connected to the positive and negative electrodes of the bonding area according to the electrode conditions on the upper and lower sides of the semiconductor laser. Generally, it starts from the positive electrode of the bonding area and connects to the plane where the positive electrode of the semiconductor laser is located to allow current to flow.

[0058] Specifically, the connecting gold wire 27 is introduced from the positive electrode of the bonding area to the first lead-tin solder area 26, and the positive electrode of the first semiconductor laser 25 corresponding to the first lead-tin solder area 26 is connected to the second lead-tin solder area 26 through the connecting gold wire 27, and then connected to the negative electrode of the first semiconductor laser 25. After one circle of connection, the positive electrode of the last semiconductor laser 25 is connected to the negative electrode of the bonding area, completing the internal electrical connection of the single semiconductor laser module 9.

[0059] The bonding area gold wire starts from the positive electrode of the bonding area of ​​the semiconductor laser module connected to the electrode, is connected to the negative electrode of the bonding area of ​​the next semiconductor laser module, and then returns to the negative electrode of the semiconductor laser module after completing a circle.

[0060] Specifically, after the semiconductor laser module 9 and the conductor laser module assembly base are installed and fixed, the bonding area gold wire 28 is connected from the positive electrode of the bonding area of ​​the first semiconductor laser module 9 to the negative electrode of the bonding area of ​​the next semiconductor laser module 9. After one circle of connection, the positive electrode of the bonding area of ​​the last semiconductor laser module 9 is connected to the negative electrode of the bonding area of ​​the first semiconductor laser module 9, completing the electrical connection between the N semiconductor laser modules 9.

[0061] In a further specific embodiment, a laser module cooling liquid microchannel 29 is provided inside the semiconductor laser module 9, and the two ports of the laser module cooling liquid microchannel 29 are respectively a cooling liquid inlet 30 of the semiconductor laser module and a cooling liquid outlet 31 of the semiconductor laser module. The cooling liquid inlet and outlet of the semiconductor laser module 9 are located on the outer end surface of the lower side of the semiconductor laser module and are symmetrically opened; a module assembly base cooling liquid microchannel 32 is provided inside the semiconductor laser module assembly base 7 to form a series connection of the laser module cooling liquid microchannels 29 of several semiconductor laser modules 9, and the two ports of the module assembly base cooling liquid microchannel 32 are respectively a module assembly base cooling liquid inlet 33 and a module assembly base cooling liquid outlet 34. The module assembly base cooling liquid inlet and outlet are opened on the side wall of the semiconductor laser module assembly base 7 and are connected to an external cooling liquid supply device.

[0062] Therefore, the overall heat dissipation method of the entire device of the present invention is: the coolant flows in through the coolant inlet 33 of the module assembly base, flows along the coolant microchannel 32 of the module assembly base in the coolant microchannel 29 of each laser module, and finally flows out from the coolant outlet 34 of the module assembly base.

[0063] In a further specific embodiment, a mounting hole 1 35 is integrally opened on the semiconductor laser fixing base 21 in the middle position of the two bonding areas 22 and below the semiconductor laser fixing base 21, and a corresponding mounting hole 2 is opened on the semiconductor laser module assembly base 7. Two second long screws 36 pass through the corresponding mounting holes 1 35 and 2 above and below, respectively, to install the semiconductor laser module 9 and the semiconductor laser fixing base 21 as a whole on the semiconductor laser module assembly base 7. The remaining semiconductor laser modules 9 and the semiconductor laser fixing base 21 are also installed in this way. The second long screws 36 are made of copper material to conduct electricity and improve heat dissipation efficiency.

[0064] In a further specific embodiment, two second long screws 36 on one of the semiconductor laser modules are selected and lengthened to be used as electrodes 10, and the second mounting hole corresponding to the semiconductor laser module on the semiconductor laser module assembly base 7 is opened. The opened hole can be called an electrode fixing hole. The electrode 10 can be inserted into the mounting hole 1 35 through the electrode fixing hole and the second mounting hole opened on the outer edge to achieve electrical connection with the semiconductor laser module 9. Since the second long screw 36 as the electrode 10 is made of copper material, it can guide the current to the eight semiconductor laser modules to provide power for the entire device.

[0065] Furthermore, since the electrode 10 in the present invention can be selectively inserted into the corresponding electrode fixing hole, the second mounting hole and the first mounting hole 35 to connect to any semiconductor laser module, it is convenient for people to replace the position of the electrode according to their own needs.

[0066] The semiconductor laser 25 in the semiconductor laser module 9 of the present invention is modularly designed by selecting lasers made of semiconductor materials such as GaAs, InP, GaN, etc.; the oxygen-free copper heat sink 24 and the isolation insulating area 23 can also be modularly designed according to needs, and are both adhered to the semiconductor laser fixing base 21 by high-performance thermal conductive adhesive.

[0067] In the present invention, the intermediate housing 14 of the concave lens and the convex lens can be replaced according to the focal length requirement between the concave lens and the convex lens, and a modular design is performed.

[0068] In the present invention, the edge of the plane lens 20 is attached to the upper end of the convex lens housing 15 by means of a heat-conductive double-sided adhesive.

[0069] In the present invention, the isolation insulating area 23, oxygen-free copper heat sink 24, semiconductor laser 25, locking buckle 16, locking buckle 2 19, double-sided concave optical lens 13, double-sided convex optical lens 18, etc. in the semiconductor laser module 9 can all be replaced and upgraded according to needs.

[0070] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0071] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high-power semiconductor laser with circular beam output, characterized in that: It includes a first layer structure, a second layer structure, and a third layer structure which are arranged in sequence from bottom to top, and the three layers of structure are integrally assembled and connected together; The first layer structure includes a semiconductor laser module, a semiconductor laser module assembly base, and a first layer shell arranged above the semiconductor laser module assembly base. The semiconductor laser module is fixed on the upper surface of the semiconductor laser module assembly base and is composed of N identical semiconductor laser modules. The N semiconductor laser modules are electrically connected and arranged in a ring shape as a whole. Two electrodes are arranged at the bottom end of the semiconductor laser module assembly base. The two electrodes are respectively connected to the positive and negative electrodes of any one of the semiconductor laser modules to provide power for the entire device. The second layer structure includes a concave lens housing, a concave lens platform is arranged inside the concave lens housing, and a double-concave optical lens is placed on the concave lens platform; The third layer structure includes an intermediate shell between a concave lens and a convex lens and a convex lens shell arranged above the intermediate shell between the concave lens and the convex lens. A locking buckle 1 for limiting the movement of the double-sided concave optical lens is provided on the intermediate shell between the concave lens and the convex lens. A convex lens platform is provided inside the convex lens shell, and the double-sided convex optical lens is placed on the convex lens platform. A locking buckle 2 for limiting the movement of the double-sided convex optical lens is provided on the convex lens shell, and a plane lens is installed on the upper part of the convex lens shell.

2. A high-power semiconductor laser with circular beam output according to claim 1, characterized in that: Connection holes are opened on opposite sides of the edges of the first layer structure, the second layer structure and the third layer structure. Two first long screws pass through the two corresponding upper and lower groups of connection holes in the three-layer structure in sequence, and the corresponding long screw matching nuts are locked at the bottom to complete the assembly connection of the three-layer structure.

3. The high-power semiconductor laser with circular beam output according to claim 1, characterized in that: The semiconductor laser module is installed on the semiconductor laser fixing base; the side of the semiconductor laser module away from the center of the semiconductor laser module assembly base is defined as the lower side, and the two side areas of the lower side of the semiconductor laser module are two bonding areas respectively, and the electricity on the electrode passing through the semiconductor laser fixing base can be introduced into the two bonding areas; there are N oxygen-free copper heat sinks and N-1 isolation insulation areas distributed on the left and right sides and the upper side of the semiconductor laser module, and the oxygen-free copper heat sinks and the isolation insulation areas are arranged at intervals. The semiconductor laser module is provided with N semiconductor lasers corresponding to the oxygen-free copper heat sinks one by one, and each semiconductor laser is connected and fixed to the corresponding oxygen-free copper heat sink through lead-tin solder. The area where the lead-tin solder is located is the lead-tin solder area, and the lead-tin solder area is located on the entire oxygen-free copper heat sink.

4. The high-power semiconductor laser with circular beam output according to claim 3, characterized in that: The semiconductor laser module is also provided with connecting gold wires and bonding area gold wires; The connecting gold wire is introduced from the positive electrode of the bonding area to the first lead-tin solder area. The positive electrode of the first semiconductor laser corresponding to the first lead-tin solder area is connected to the second lead-tin solder area through the connecting gold wire, and then connected to the negative electrode of the first semiconductor laser. After one circle of connection, the positive electrode of the last semiconductor laser is connected to the negative electrode of the bonding area, completing the internal electrical connection of the single semiconductor laser module. After the semiconductor laser module and the conductor laser module assembly base are installed and fixed, the gold wire of the bonding area is connected from the positive electrode of the bonding area of ​​the first semiconductor laser module to the negative electrode of the bonding area of ​​the next semiconductor laser module. After one circle of connection, the positive electrode of the bonding area of ​​the last semiconductor laser module is connected to the negative electrode of the bonding area of ​​the first semiconductor laser module, completing the electrical connection between N semiconductor laser modules.

5. The high-power semiconductor laser with circular beam output according to claim 3, characterized in that: A laser module cooling liquid microchannel is provided inside the semiconductor laser module, and the two ports of the laser module cooling liquid microchannel are respectively the cooling liquid inlet and the cooling liquid outlet of the semiconductor laser module, and the cooling liquid inlet and outlet of the semiconductor laser module are located on the outer end surface of the lower side of the semiconductor laser module and are symmetrically opened; a module assembly base cooling liquid microchannel is provided inside the semiconductor laser module assembly base to form a plurality of laser module cooling liquid microchannels in series, and the two ports of the module assembly base cooling liquid microchannel are respectively the module assembly base cooling liquid inlet and the module assembly base cooling liquid outlet, and the module assembly base cooling liquid inlet and outlet are opened on the side wall of the semiconductor laser module assembly base and are connected to an external cooling liquid supply device.

6. The high-power semiconductor laser with circular beam output according to claim 3, characterized in that: A mounting hole 1 is integrally formed on the semiconductor laser fixing base in the middle position of the two bonding areas and below the semiconductor laser fixing base, and a corresponding mounting hole 2 is formed on the semiconductor laser module assembly base. Two second long screws pass through the corresponding mounting holes 1 and 2 above and below, respectively, to integrally install the semiconductor laser module and the semiconductor laser fixing base on the semiconductor laser module assembly base; the second long screws are made of copper material.

7. The high-power semiconductor laser with circular beam output according to claim 6, characterized in that: Select the two second long screws on one of the semiconductor laser modules to lengthen it for use as an electrode, and open the second mounting hole corresponding to the semiconductor laser module on the semiconductor laser module assembly base. The electrode can be inserted into the first mounting hole from the second mounting hole opened on the outer edge to achieve electrical connection with the semiconductor laser module.

8. The high-power semiconductor laser with circular beam output according to claim 3, characterized in that: The semiconductor lasers in the semiconductor laser module are selected from GaAs, InP, and GaN semiconductor material lasers for modular design; the oxygen-free copper heat sink and the isolation insulation area are also modularly designed according to the needs, and are adhered to the semiconductor laser fixing base through high-performance thermal conductive adhesive.

9. The high-power semiconductor laser with circular beam output according to claim 1, characterized in that: The intermediate housing of the concave lens and the convex lens is replaced according to the focal length requirement between the concave lens and the convex lens, and is modularly designed.

10. The high-power semiconductor laser with circular beam output according to claim 1, characterized in that: The edge of the plane lens is attached to the upper port of the convex lens housing through a heat-conductive double-sided adhesive.

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