Intelligent power module and bridging device

Abstract

The invention discloses an intelligent power module and a bridging device. The intelligent power module includes: a plurality of controllable semiconductor devices each including a control electrode and a controllable load path between a first load electrode and a second load electrode; a gate driver configured to generate one or more control signals for the one or more controllable semiconductor devices; and one or more bridging devices, each bridging device comprising a housing, a plurality of contact discs arranged outside the housing, and one or more electrical connectors arranged inside the housing, each electrical connector electrically coupling two contact discs of the plurality of contact discs to each other, the at least one bridging device is electrically coupled between the control electrodes of one or more of the plurality of controllable semiconductor devices and the gate driver, respectively, and is configured to route one or more control signals from the gate driver to the control electrodes of the corresponding one or more controllable semiconductor devices.

Description

Technical Field

[0001] The present disclosure relates to intelligent power modules and bridge devices, and more particularly to intelligent power module arrangements. Background Art

[0002] Intelligent power modules can be used, for example, in rectifier, converter and inverter stages in power management circuits and motor drives for applications such as fans, hair dryers, air purifiers and circulation pumps. For example, an intelligent power module can include different components such as controllable semiconductor devices (e.g., IGBTs arranged in half-bridge and three-phase configurations), gate drivers and diodes. These components can be arranged in a molded package. The electrical connections inside the package can be achieved by bonding wires. Such internal line connections should generally be thin and as short as possible. In general, the package size should be small and the thermal resistance should be low.

[0003] Therefore, there is a general need for an intelligent power module in which internal electrical connections between different components can be formed by thin bonding wires that do not exceed a defined maximum length. Summary of the invention

[0004] An intelligent power module comprises: a plurality of controllable semiconductor devices, each of which comprises a control electrode and a controllable load path between a first load electrode and a second load electrode; a gate driver configured to generate one or more control signals for one or more of the plurality of controllable semiconductor devices; and one or more bridge devices, each of which comprises a housing, a plurality of contact pads arranged outside the housing, and one or more electrical connectors arranged inside the housing, wherein each of the one or more electrical connectors electrically couples two of the plurality of contact pads to each other, wherein at least one of the one or more bridge devices is electrically coupled between the control electrodes of one or more of the plurality of controllable semiconductor devices and the gate driver, respectively, and is configured to route one or more control signals from the gate driver to the control electrodes of the corresponding one or more controllable semiconductor devices.

[0005] A bridge device for an intelligent power module is disclosed, wherein the bridge device includes a shell, a plurality of contact pads arranged outside the shell, and one or more electrical connectors arranged inside the shell, wherein each of the one or more electrical connectors electrically couples two of the plurality of contact pads to each other, and the bridge device is configured to: electrically couple between control electrodes of one or more of a plurality of controllable semiconductor devices and a gate driver of the intelligent power module, respectively, and route one or more control signals from the gate driver to the control electrodes of the corresponding one or more controllable semiconductor devices.

[0006] The present invention can be better understood with reference to the attached drawings and description. The components in the drawings are not necessarily drawn to scale, but the emphasis is placed on illustrating the principles of the present invention. In the drawings, similar reference numerals represent corresponding parts throughout the different views. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a cross-sectional view of an intelligent power module.

[0008] Figure 2 is a cross-sectional view of another intelligent power module.

[0009] Figure 3 It is a circuit diagram of three-phase half-bridge arrangement.

[0010] Figure 4 is a top view of an intelligent power module according to an embodiment of the present disclosure.

[0011] Figure 5 is a circuit diagram of a three-phase half-bridge arrangement according to an embodiment of the present disclosure.

[0012] Figure 6 is a top view of another intelligent power module according to an embodiment of the present disclosure.

[0013] Figure 7 A top view of a bridging device according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0014] In the following detailed description, reference is made to the accompanying drawings. The accompanying drawings show specific examples in which the present invention can be practiced. It should be understood that the features and principles described with respect to the various examples can be combined with each other unless otherwise specifically noted. In the claims, designating certain elements as "first element", "second element", "third element", etc. should not be understood as enumeration. Rather, such designation is only used to handle different "elements". That is, for example, the presence of a "third element" does not require the presence of a "first element" and a "second element". The wire as described herein can be a single conductive element, or include at least two separate conductive elements connected in parallel. The wire can include metal and / or semiconductor material, and can be permanently conductive (i.e., non-switchable). The wire can have a resistivity that is independent of the direction of the current flowing through the wire. The semiconductor component (semiconductor body) as described herein can be made of (doped) semiconductor material, and can be a semiconductor chip or be included in a semiconductor chip. The semiconductor body has an electrically connected disk and includes at least one semiconductor element having an electrode. The disk is electrically connected to the electrode, which includes the disk itself being an electrode, and vice versa.

[0015] Reference Figure 1 , schematically illustrates an intelligent power module according to an example. An intelligent power module typically includes one or more components 20, such as a power switching device (e.g., one or more insulated gate bipolar transistors IGBT) and additional control and protection circuit systems (e.g., a microcontroller, a gate driver IC, etc.). In other words, an intelligent power module typically includes an intelligent drive component and a power switching component. Different components 20 are arranged in a package, and electrical connections between the components 20 and the outside of the package are provided by a plurality of lead frames 52, 54. Each lead frame 52, 54 typically provides a flat mounting area arranged inside the housing. Zero, one or more components 20 may be arranged on different flat mounting areas of a plurality of flat mounting areas inside the package. The ends of the lead frames 52, 54 that are opposite to the flat mounting area and extend to the outside of the package may be angled relative to the flat mounting area, such as Figure 1 In this way, contact with the ends of the lead frames 52, 54 can be made easier.

[0016] exist Figure 1In the shown intelligent power module 100, all of the flat mounting areas provided by the lead frames 52, 54 are arranged in the same plane (e.g., the first plane PL1). The intelligent power module 100 also includes a heat sink 40. For example, the heat sink 40 may also be referred to as a heat spreader. The heat sink 40 may extend from one or more lead frames 52 toward the outside of the package. That is, at least one surface of the heat sink 40 that faces away from the lead frames 52, 54 is not covered by the material that forms the package. In this way, the heat generated by the component 20 can be effectively dissipated from the component 20 to the outside of the package via the heat sink 40. However, the multiple lead frames 52, 54 of the intelligent power module 100 are typically not all coupled to the same potential. Therefore, the heat sink 40, which generally includes or is composed of a thermally conductive and electrically conductive material (e.g., metal), can be in direct contact with some of the lead frames 52 that are coupled to the first potential while being dielectrically insulated from other lead frames 54 in the smart power module 100 that are coupled to potentials other than the first potential.

[0017] This is Figure 1 . In this example, the package is formed by a first encapsulation material 72 that encapsulates the component 20 and the surface of the lead frame 52, 54 on which the component 20 is mounted. For example, the first encapsulation material 72 may also be arranged between the heat sink 40 and any lead frame 54 that is not in direct contact with the heat sink 40. The second encapsulation material 74 may encapsulate the first encapsulation material 72 and may partially encapsulate the heat sink 40. However, at least the surface of the heat sink 40 that faces away from the lead frame 52, 54 is not covered by the second encapsulation material 74. The first encapsulation material 72 may be the same as the second encapsulation material 74, or it may be different.

[0018] Different components 20 of the intelligent power module 100 can be mechanically and electrically coupled to corresponding lead frames in the lead frames 52, 54 through conductive connection layers (not specifically shown). The conductive connection layer can be a solder layer, a (conductive) adhesive layer, or a sintered metal powder (e.g., sintered silver powder) layer. The component 20 can also be electrically coupled to other components 20 or other lead frames through electrical connections 3 (such as bonding wires or bonding ribbons).

[0019] The size of the intelligent power module 100 is often a problem. A certain amount of space is required for the different components 20 arranged on the lead frames 52, 54 and the electrical connectors 3 required to make the necessary electrical interconnections within the intelligent power module 100. This problem is further exacerbated by the fact that sufficient dielectric insulation must be provided between the lead frames 52, 54 and the components coupled to different electrical potentials. Figure 2, which schematically shows another exemplary intelligent power module 100. In the intelligent power module 100, a first subset of a plurality of lead frames 52, 54 (i.e., a flat mounting area of ​​the lead frames of the first subset) is arranged in a first plane PL1, while a second subset of a plurality of lead frames 52, 54 (i.e., a flat mounting area of ​​the lead frames of the second subset) is arranged in a second plane PL2 different from the first plane PL1. The lead frames 52 arranged in the first plane PL1 are adjacent to the heat sink 40, while the lead frames 54 arranged in the second plane PL2 are arranged away from the heat sink 40. A layer of a first encapsulation material 72 forming a package may be arranged between the heat sink 40 and the lead frames 54 of the second subset to provide sufficient dielectric insulation. Arranging different lead frames and thus arranging different components 20 in different planes PL1, PL2 makes the layout of the intelligent power module 100 more compact.

[0020] Typically, those components 20 that generate a lot of heat during operation of the intelligent power module 100 are arranged on the lead frame 20 directly adjacent to the heat sink 40. Other components 20 that do not generate a lot of heat during operation of the intelligent power module 100 can be arranged on a second subset of lead frames 54 that are arranged farther from the heat sink 40 because heat dissipation is generally not critical for these components 20. Components that generate a lot of heat during operation of the intelligent power module 100 are generally components that perform switching operations, for example, power switching devices such as insulated gate bipolar transistors, IGBTs. Even during operation of the intelligent power module 100, components 20 included in the control and protection circuit system (e.g., microcontrollers, gate driver ICs, etc.) are generally kept relatively cool.

[0021] By arranging different lead frames 52, 54 in different planes PL1, PL2 within the package, as in Figure 1 The overall size of the intelligent power module 100 can be reduced compared to the arrangement shown in which all lead frames 52, 54 are arranged in the same plane PL1. However, due to this additional "step" between the lead frames, the length of certain electrical connectors 3 (e.g., bonding wires) may be increased in order to provide electrical interconnection between components 20 arranged in different planes PL1, PL2. When the length of the bonding wire is increased compared to a bonding wire with a shorter length, this generally also requires an increase in the diameter of the bonding wire. Generally, it is desirable to keep the length of a single electrical connector 3 (e.g., a single bonding wire) shorter than a specified maximum length while still keeping its diameter relatively thin. For example, a single electrical connector 3 may have a length of 4.0 mm (millimeter) or less. This may be difficult to achieve in a configuration such as Figure 2 The smart power module 100 schematically shown in FIG. Figure 1 and Figure 2In FIG. 2 , a molded package is schematically shown. However, the component 20 may alternatively be arranged in any other suitable kind of package.

[0022] For example, the components 20 of the intelligent power module 100 can be arranged to form a half-bridge, H-bridge, or three-phase half-bridge arrangement. However, any other arrangement is generally feasible. Now referring to Figure 3 , a circuit diagram of a three-phase half-bridge arrangement is shown exemplarily. The three-phase half-bridge arrangement includes three high-side switches HS1, HS2, HS3 and three low-side switches LS4, LS5, LS6. Each high-side switch in the high-side switches HS1, HS2, HS3 and each low-side switch in the low-side switches LS4, LS5, LS6 can be realized by one or more controllable semiconductor devices (such as insulated gate bipolar transistors, IGBTs). A plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 each include control electrodes G1, G2, G3, G4, G5, G6 and a controllable load path between a first load electrode and a second load electrode. The load paths of the controllable semiconductor devices HS1, HS2, HS3 forming the high-side switches are coupled between a first terminal P (e.g., a first terminal P coupled to a positive potential) and corresponding load terminals UP, VP, W. The load paths of the controllable semiconductor devices LS4 , LS5 , LS6 forming the low-side switches are coupled between the respective load terminals UN, VN, W and a second terminal N (eg a second terminal coupled to a negative potential).

[0023] The control electrodes G1, G2, G3, G4, G5, G6 of the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 are coupled to the respective outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60. The gate driver 60 provides respective control (gate drive) signals for the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 at its outputs HO1, HO2, HO3, HO4, HO5, HO6. The gate driver 60 may receive respective inputs HU, LU, HV, LV, HW, LW from, for example, a microcontroller 62, based on which the gate driver 60 generates the control (gate drive) signals. For example, the microcontroller 62 may be integrated in the intelligent power module 100, or may be an external device coupled to the intelligent power module 100. Since the microcontroller 62 is not necessarily included in the intelligent power module 100, Figure 3 Shown by dotted lines.

[0024] like Figure 3As shown, each of the control electrodes G1, G2, G3, G4, G5, G6 of the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 is directly coupled to the gate driver 60 in the conventional intelligent power module. As described above, the gate driver 60 can be arranged on the lead frame 54 disposed in the second plane PL2, while the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 can be arranged on the lead frame 52 disposed in the first plane PL1 and can therefore be closer to the heat sink 40. Due to design and space limitations, it is not always possible to arrange all of the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 very close to the gate driver 60. Therefore, at least some of the electrical connections 3 formed between the gate driver 60 and the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 may need to be formed to have a significant length. As described above, this may not be desirable.

[0025] In order to keep the length of each of the required electrical connections 3 below the defined maximum length, the intelligent power module 100 according to an embodiment of the present disclosure includes a plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6, each of which includes a control electrode G and a controllable load path between a first load electrode and a second load electrode. The intelligent power module 100 also includes: a gate driver 60, the gate driver 60 is configured to generate one or more control signals for one or more of the plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6; and one or more bridge devices 64, each of which includes a housing 642, a plurality of contact pads 644 arranged outside the housing 642. x (where x is a positive integer), and one or more electrical connectors 646 disposed inside the housing 642 y (where y is a positive integer), wherein the one or more electrical connectors 646 y Each electrical connector has multiple contact pads 644 xAt least one of the one or more bridge devices 64 is electrically coupled between the control electrode G of one or more controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 and the gate driver 60, and is configured to route one or more control signals from the gate driver 60 to the control electrode G of the corresponding one or more controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6.

[0026] This is Figure 4 and Figure 5 It is schematically shown in FIG. Figure 4 is a top view of an intelligent power module 100 according to an embodiment of the present disclosure, and Figure 5 is a circuit diagram of a three-phase half-bridge arrangement according to an embodiment of the present disclosure. However, arranging the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 in a three-phase half-bridge arrangement is only an example. The general principles regarding one or more bridge devices 64 are also applicable to any other arrangement. Figure 4 and Figure 5 The bridge device 64 shown is generally a very simple component. Figure 7 As schematically shown in FIG. 6 , for example, the bridging device 64 only provides a plurality of contact pads 644 arranged outside the housing 642. x and one or more electrical connectors 646 disposed within the housing 642 y , wherein one or more electrical connectors 646 y Each electrical connector has multiple contact pads 644 x The two contact pads in the electrical connector 646 are electrically coupled to each other. y Can be formed by a simple conductive path.

[0027] For example, each of the one or more bridge devices 64 may include a metallization layer disposed inside the housing 642. The metallization layer may include one or more sections that are separate and distinct from each other, and one or more electrical connectors 646. y Each electrical connection in can be formed by one of the one or more sections of the metallization layer. Contact pad 644 x It can be a section of a metallization layer arranged outside the housing 642. That is, through the electrical connector 646 y Any two contact pads 644 connected to each other x Can be connected with corresponding electrical connector 646 y However, the contact plate 644 xIt can also be formed separately and electrically connected to the corresponding electrical connector 646 in any suitable manner. y A very simple bridge device 64 may comprise only two contact pads 6441, 6446, which are coupled to each other via a metallization layer having only a single section 6461. In general, however, the bridge device 64 may comprise more than two contact pads 6441, 6446. x ,like Figure 7 Schematically shown in FIG.

[0028] Different electrical connections 646 of the bridge device 64 y They may not intersect each other, such as Figure 7 This can be easily achieved with a single structured metallization layer. However, in order to avoid crossing the bonding wires 3 leading to or from the bridge device 64, a bridge device 64 can be provided that provides an internally intersecting electrical connection 646. y This is Figure 7 The right side of the diagram is schematically shown. The intersecting electrical connector 646 y It can be realized by, for example, two or more metallization layers. That is, the bridge device 64 may include two or more metallization layers and one or more dielectric insulation layers arranged inside the housing 642. Each of the one or more dielectric insulation layers may be arranged between two of the two or more metallization layers, so that the two or more metallization layers and the one or more dielectric insulation layers are arranged in an alternating manner. Each of the two or more metallization layers includes one or more segments that are separated and different from each other. One or more electrical connectors 646 y At least one electrical connection in the at least two different sections of at least two different metallization layers and at least one through hole extending through at least one of the one or more dielectric insulation layers and electrically coupled to a corresponding section of the at least two different sections of the at least two different metallization layers. That is, a section of a first metallization layer extending in a first plane may intersect a section of a second metallization layer extending in a second plane and may be electrically insulated from a corresponding section of the second metallization layer by the dielectric insulation layer.

[0029] For example, one or more metallization layers may be deposited on the semiconductor body. The semiconductor body may include or consist of a conventional semiconductor material, such as silicon (Si). Alternatively, one or more metallization layers may also be formed, for example, on a conventional printed circuit board PCB. Any other implementation is also generally feasible. However, for example, the semiconductor body is typically significantly thinner (e.g., about 280 μm) than the PCB (e.g., up to 800 μm), which may make it easier to integrate the thin semiconductor body in the package. There are PCBs with significantly reduced thickness (e.g., less than 500 μm), but they are generally very expensive.

[0030] Reference Figure 5 , each of the one or more control signals generated by the gate driver 60 may be provided at a different output HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60. Control electrodes G of different controllable semiconductor devices of the plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 are coupled to different outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60 via different signal paths of the plurality of signal paths. At least one signal path of the plurality of signal paths comprises a plurality of contact pads 644 of one of the one or more bridge devices 64. x The two contact pads in the embodiment electrically couple the two contact pads 644. x Electrical connector 646 y , on two contact pads 644 x A bonding wire 3 extends between one of the contact pads 644 and one of the plurality of outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60, and a bonding wire 3 extends between the two contact pads 644. x A bonding wire 3 extends between another contact pad in the gate driver 60 and a control electrode G of one of the controllable semiconductor devices HS1, HS2, HS3. That is, some of the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 can be directly coupled to the gate driver 60 (for example, Figure 4 and Figure 5 Other controllable semiconductor devices among the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 may be coupled to the gate driver 60 via two separate bonding wires 3, wherein a bridge device 64 is arranged between the two bonding wires 3 and provides an electrical connection between the two bonding wires 3 (e.g., Figure 4 and Figure 5In this way, one or more of the signal paths can be “bridged” by the bridging device 64, thereby keeping the length of the individual bonding wires 3 included in the signal paths short. In this way, relatively thin bonding wires 3 can also be used.

[0031] For example, in contact plate 644 x Each bonding wire 3 extending between one of the plurality of outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60 may have a length of 4.0 mm or less and a maximum thickness of 40 μm or less. x Each bonding wire 3 extending between the control electrode G of one of the plurality of controllable semiconductor devices HS1 , HS2 , HS3 , LS4 , LS5 , LS6 may have a length of 4.0 mm or less and a maximum thickness of 40 μm or less.

[0032] In some examples, all signal paths between the plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 may include the electrical connection 646 of the bridge device 64. y . That is, none of the plurality of controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 may be directly coupled to the gate driver 60 via a single bonding wire 3. However, it is also possible that a first subset (one or more) of controllable semiconductor devices HS1, HS2, HS3 are connected to the gate driver 60 via a bridge device 64, while a second subset (one or more) of controllable semiconductor devices LS4, LS5, LS6 are directly connected to the gate driver 60. That is, at least one of the plurality of signal paths may include a bonding wire 3 extending between a control electrode G of one of the plurality of controllable semiconductor devices LS4, LS5, LS6 and one of the plurality of outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60. Each bonding wire 3 extending between the control electrode G of one of the plurality of controllable semiconductor devices LS4, LS5, LS6 and one of the plurality of outputs HO1, HO2, HO3, HO4, HO5, HO6 of the gate driver 60 may have a length of 4.0 mm or less and a maximum thickness of 40 μm or less. That is, a signal path that can be realized by a single relatively short bonding wire 3 may not need to be bridged by a bridging device 64.

[0033] As described above, the intelligent power module 100 may further include a microcontroller 62, wherein the microcontroller 62 is electrically coupled to the gate driver 60, that is, the microcontroller 62 may provide corresponding inputs HU, LU, HV, LV, HW, LW to the gate driver 60. Figure 4 The optional microcontroller 62 is indicated by a dashed line in FIG. Figure 4 In the top view of FIG. 1 , only the different components of the intelligent power module 100 and the electrical connections 3 between the components are shown in a very general manner.

[0034] Now refer to Figure 6 , shows an exemplary intelligent power module 100 in more detail. Specifically, in Figure 6 The top view schematically shows a plurality of lead frames 52 l , 54 m (wherein, l and m are positive integers, respectively). It can be seen that the intelligent power module 100 may include lead frames 521, 523, 524, on which only one component (e.g., controllable semiconductor devices HS1, HS2, HS3) is arranged. The intelligent power module 100 may also include lead frames 525, 541, on which more than one component (e.g., controllable semiconductor devices LS4, LS5, LS6 and gate driver 60, bridge device 64 and (optional) microcontroller 62) is arranged. Other lead frames 522, 526, 527, 542, 543 may not have any components arranged thereon, and may only need to provide electrical contact between the inside and outside of the housing. Figure 6 The shapes and arrangements of the different lead frames shown in FIG. 1 are merely examples. The specific design of the intelligent power module 100 may be implemented in any other suitable manner.

[0035] like Figure 6 The intelligent power module 100 exemplarily shown in FIG. 1 includes more than one bridge device 64. Specifically, Figure 6The intelligent power module 100 includes two bridge devices 64. The first bridge device in the bridge device 64 is arranged between the gate driver 60 and the subset HS1, HS2, HS3 of the controllable semiconductor devices, similar to what has been described above. Similar to the first bridge device, the second bridge device in the bridge device 64 forms a part of the signal path from the gate driver 60 to another controllable semiconductor device LS6 in the controllable semiconductor device. However, the second bridge device in the bridge device 64 is also electrically coupled between the microcontroller 62 and the two lead frames 542, 543 in the lead frame, and is configured to route one or more signals from the outside of the package to the microcontroller 62 (or vice versa). The bridge device 64 can even be electrically coupled between the microcontroller 62 and the gate driver 60 (not specifically shown), wherein the bridge device 64 is configured to route one or more signals from the microcontroller 62 to the gate driver 60. In general, one or more bridge devices 64 may be included in an intelligent power module to route any type of signal between any components included in the intelligent power module 100 .

[0036] One or more bridge devices 64 may be mechanically coupled to the corresponding lead frame 54 in any suitable manner. l For example, the bridge device 64 may be bonded, welded, fused, or sintered to the corresponding lead frame 54. l According to one example, the bridge device 64 may be attached to the corresponding lead frame 54 by silver (Ag) epoxy. l .

[0037] The bridge device 64 of the intelligent power module 100 according to the embodiment of the present disclosure includes a housing 642, a plurality of contact pads 644 arranged outside the housing 642, and a plurality of contact pads 644 arranged outside the housing 642. x and one or more electrical connectors 646 disposed within the housing 642 y One or more electrical connectors 646 y Each electrical connector has multiple contact pads 644 x The two contact pads in are electrically coupled to each other, and the bridge device 64 is configured to: electrically couple between the control electrodes G of one or more controllable semiconductor devices among the multiple controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 and the gate driver 60 of the intelligent power module 100, and route one or more control signals from the gate driver 60 to the control electrodes G of the corresponding one or more controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6.

[0038] As described above, the bridge device 64 "bridges" the distance between the gate driver 60 and one or more controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 or between any two components of the intelligent power module 100. In this way, the maximum length of the bonding wire 3 used to form an electrical connection between the gate driver 60 and one or more controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 (or between any two components of the intelligent power module 100) can be significantly reduced. This is as described above with respect to Figure 2 The described arrangement (arranging different lead frames in different planes PL1, PL2) may be particularly advantageous. However, one or more bridge means 64 may also be used in the above described arrangement. Figure 1 In the described intelligent power module 100, one or more bridge devices 64 provide electrical connections 646 arranged in the housing 642. y , so that the bridge device 64 can be easily handled. For example, one or more bridge devices 64 can generally be positioned and attached to the corresponding lead frame using the same equipment as used for positioning and attaching the controllable semiconductor devices HS1, HS2, HS3, LS4, LS5, LS6 and / or the gate driver 60. Electrical connector 646 y It is well protected inside the housing 642 so no special precautions need to be taken when handling the bridging device 64.

Claims

1. An intelligent power module (100), comprising: a plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6), each of the plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) comprising a control electrode (G) and a controllable load path between a first load electrode and a second load electrode; a gate driver (60) configured to generate one or more control signals for one or more controllable semiconductor devices among the plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6); as well as One or more bridge devices (64), each of the one or more bridge devices (64) comprising a housing (642), a plurality of contact plates (644) arranged outside the housing (642), and a plurality of contact plates (644) arranged outside the housing (642). x ), and one or more electrical connectors (646) disposed inside the housing (642) y ), wherein the one or more electrical connectors (646 y ) each electrical connector connects the plurality of contact pads (644 x ) are electrically coupled to each other, wherein, At least one of the one or more bridge devices (64) is electrically coupled between a control electrode (G) of one or more controllable semiconductor devices among the plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) and the gate driver (60), and is configured to route one or more control signals from the gate driver (60) to the control electrode (G) of the corresponding one or more controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6).

2. The intelligent power module (100) according to claim 1, wherein: Each of the one or more control signals generated by the gate driver (60) is provided at a different output (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60), A control electrode (G) of each of the plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) is coupled to a different output of the plurality of outputs (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60) through a different signal path of the plurality of signal paths, and At least one signal path of the plurality of signal paths comprises: A plurality of contact pads (644) of a bridge device in the one or more bridge devices (64) x ) in two contact plates, Electrically coupling the two contact pads (644 x ) electrical connector (646 y ), In the two contact plates (644 x ) and one of the plurality of outputs (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60), and In the two contact plates (644 x ) and a bonding wire (3) extending between another contact pad in the controllable semiconductor device (HS1, HS2, HS3) and a control electrode (G) of one of the plurality of controllable semiconductor devices (HS1, HS2, HS3).

3. The intelligent power module (100) according to claim 2, wherein: In the two contact plates (644 x ) and one of the plurality of outputs (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60) has a length of 4.0 mm or less and a maximum thickness of 40 μm or less; and In the two contact plates (644 x ) and a control electrode (G) of one of the plurality of controllable semiconductor devices (HS1, HS2, HS3) has a length of 4.0 mm or less and a maximum thickness of 40 μm or less.

4. The intelligent power module (100) according to claim 2 or 3, wherein: At least one of the plurality of signal paths comprises a bonding wire (3) extending between a control electrode (G) of one of the plurality of controllable semiconductor devices (LS4, LS5, LS6) and one of the plurality of outputs (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60).

5. The intelligent power module (100) according to claim 4, wherein: A bonding wire (3) extending between a control electrode (G) of one of the plurality of controllable semiconductor devices (LS4, LS5, LS6) and one of the plurality of outputs (HO1, HO2, HO3, HO4, HO5, HO6) of the gate driver (60) has a length of 4.0 mm or less and a maximum thickness of 40 μm or less.

6. The intelligent power module (100) according to any one of claims 1 to 5, wherein: Each of the one or more bridge devices (64) includes a metallization layer disposed inside the housing (642); The metallization layer includes one or more segments that are separate and distinct from each other; and The one or more electrical connectors (646 y ) is formed by one of the one or more sections of the metallization layer.

7. The intelligent power module (100) according to claim 6, wherein: Each of the one or more bridge devices (64) comprises a semiconductor body arranged inside the housing (642), and wherein the metallization layer is arranged on the semiconductor body.

8. The intelligent power module (100) according to claim 7, wherein: The semiconductor body includes or consists of silicon.

9. The intelligent power module (100) according to any one of claims 1 to 8, wherein: Each of the one or more bridge devices (64) comprises two or more metallization layers and one or more dielectric insulation layers arranged inside the housing (642), wherein each of the one or more dielectric insulation layers is arranged between two of the two or more metallization layers, so that the two or more metallization layers and the one or more dielectric insulation layers are arranged in an alternating manner; Each of the two or more metallization layers includes one or more segments that are separate and distinct from one another; and The one or more electrical connectors (646 y ) is formed by at least two different segments of at least two different metallization layers and at least one through-hole extending through at least one dielectric insulation layer of the one or more dielectric insulation layers and electrically coupling corresponding segments of the at least two different segments of the at least two different metallization layers.

10. The intelligent power module (100) according to any one of the preceding claims, wherein: The plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6), the gate driver (60) and the one or more bridge devices (64) are arranged in a molded package.

11. The intelligent power module (100) according to claim 10, wherein: The plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) are arranged in a first plane (PL1), The gate driver (60) and the at least one bridge device (64) are arranged in a second plane (PL2), and The first plane (PL1) is arranged closer to the bottom surface of the molded package than the second plane (PL2), so that when the bottom surface of the molded package is attached to the heat sink (40), the plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) are arranged closer to the heat sink (40) than the gate driver (60) and the at least one bridge device (64).

12. The intelligent power module (100) of claim 11, further comprising a plurality of lead frames (52, 54), each of the plurality of lead frames (52, 54) having a first end disposed inside the molded package and a second end extending to outside the molded package.

13. The intelligent power module (100) according to claim 12, wherein: Each of the at least one bridge device (64) is bonded, welded, fused or sintered to a corresponding lead frame of the plurality of lead frames (52, 54).

14. The intelligent power module (100) according to claim 12 or 13, further comprising a microcontroller (62) arranged in the molded package, wherein: The microcontroller (62) is electrically coupled to the gate driver (60).

15. The intelligent power module (100) according to claim 14, wherein: At least one of the one or more bridge devices (64) is electrically coupled between the microcontroller (62) and the gate driver (60) and is configured to route one or more control signals from the microcontroller (62) to the gate driver (60).

16. The intelligent power module (100) according to claim 14 or 15, wherein: The microcontroller (62) is electrically coupled to at least one lead frame (54) of the plurality of lead frames, and At least one of the one or more bridge devices (64) is electrically coupled between the microcontroller (62) and one or more lead frames of the at least one lead frame (54) of the plurality of lead frames.

17. The intelligent power module (100) according to any one of the preceding claims, wherein: The intelligent power module (100) comprises six controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) arranged in a three-phase half-bridge arrangement.

18. A bridge device (64) for an intelligent power module (100), wherein: The bridging device (64) includes a housing (642), a plurality of contact plates (644) arranged outside the housing (642), and a plurality of contact plates (644) disposed outside the housing (642). x ), and one or more electrical connectors (646) disposed inside the housing (642) y ),in, The one or more electrical connectors (646 y ) each electrical connector connects the plurality of contact pads (644 x ) are electrically coupled to each other, and The bridge device (64) is configured to be electrically coupled between the control electrodes (G) of one or more controllable semiconductor devices among a plurality of controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6) and the gate driver (60) of the intelligent power module (100), and to route one or more control signals from the gate driver (60) to the control electrodes (G) of the corresponding one or more controllable semiconductor devices (HS1, HS2, HS3, LS4, LS5, LS6).

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