Front-end circuit and semiconductor device

Abstract

The invention provides a front-end circuit and a semiconductor device. The front-end circuit comprises an amplifying circuit, a switching circuit, a coupler and at least one bonding wire. The amplification circuit has a first end to receive a radio frequency signal to be amplified. The switch circuit has a first terminal coupled to a second terminal of the amplifier circuit. The coupler has a first coupling element and a second coupling element disposed adjacent to each other. The first end of the first coupling element is coupled to the second end of the switching circuit. The second end of the first coupling element is coupled to the signal transmission end. The first end of the bonding wire is coupled to the first end of the first coupling element, and the second end of the bonding wire is coupled to the second end of the first coupling element.

Description

Technical Field

[0001] The present invention provides a front-end circuit and a semiconductor device, and in particular provides a front-end circuit and a semiconductor device capable of reducing the insertion power loss of an amplifier circuit. Background Art

[0002] In a radio frequency signal transceiver, an amplifier circuit is often used to couple to a coupler to amplify and process the radio frequency signal before outputting it to a radio frequency circuit or a signal transmission end for transceiver operation. In a well-known architecture, the coupler often causes coupling loss, which reduces the power of the received and transmitted signal, thereby failing to ensure the signal quality. Therefore, how to reduce the insertion power loss of the amplifier circuit is an important technical problem that needs to be solved by those skilled in the art. Summary of the invention

[0003] The invention provides a front-end circuit and a semiconductor device, which can reduce the insertion power loss of an amplifier circuit.

[0004] The front-end circuit of the present invention includes an amplifier circuit, a switch circuit, a coupler and at least one bonding wire. The amplifier circuit has a first end for receiving a radio frequency signal to be amplified. The switch circuit has a first end for coupling to a second end of the amplifier circuit. The coupler has a first coupling element and a second coupling element arranged adjacent to each other. The first end of the first coupling element is coupled to the second end of the switch circuit. The second end of the first coupling element is coupled to a signal transmission end. The first end of the bonding wire is coupled to the first end of the first coupling element, and the second end of the bonding wire is coupled to the second end of the first coupling element.

[0005] The semiconductor device of the present invention includes a first chip, a second chip, a third chip and at least one bonding wire. The first chip is used to set an amplifier circuit. The first end of the amplifier circuit receives a radio frequency signal to be amplified. The second chip is used to set a switch circuit. The switch circuit has a first end coupled to the second end of the amplifier circuit. The third chip is used to set a coupler. The coupler has a first coupling element and a second coupling element arranged adjacently. The first end of the first coupling element is coupled to the second end of the switch circuit, and the second end of the first coupling element is coupled to the signal transmission end. The first end of the bonding wire is coupled to the first end of the first coupling element, and the second end of the bonding wire is coupled to the second end of the first coupling element.

[0006] Based on the above description, the front-end circuit of the present invention arranges the switch circuit between the amplifier circuit and the coupler, and arranges at least one bonding wire on the first coupling element of the coupler. The arrangement of the bonding wire can reduce the insertion power loss of the amplifier circuit. Moreover, under the structure of the front-end circuit of the present invention, the power of the coupling signal output by the coupler can be correctly detected, and the mismatch between the amplifier circuit and the switch circuit can be avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a schematic diagram of a front-end circuit according to an embodiment of the present invention. FIG. 2A to FIG. 2D They are schematic diagrams of multiple implementations of bonding wires on the first coupling element in the front-end circuit of the embodiment of the present invention. Figure 3 Schematic diagram of an amplifier circuit in a front-end circuit according to an embodiment of the present invention. Figure 4 FIG. 1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention.

Explanation of symbols

[0008] Please refer to Figure 1 , Figure 1 1 is a schematic diagram of a front-end circuit of an embodiment of the present invention. The front-end circuit 100 may be a front-end circuit of a wireless signal transceiver. The front-end circuit 100 includes an amplifier circuit 110, a switch circuit 120, a coupler 130, and a bonding wire W1. The amplifier circuit 110 has a first end IN1 and a second end OUT1. The first end IN1 of the amplifier circuit 110 may be an input end, and the second end OUT1 of the amplifier circuit 110 may be an output end. The first end IN1 of the amplifier circuit 110 is used to receive a radio frequency signal RFin to be amplified. The second end OUT1 of the amplifier circuit 110 is used to transmit an amplified radio frequency signal ARF.

[0009] The switch circuit 120 has a first terminal E1, a second terminal E2 and a third terminal E3. The first terminal E1 of the switch circuit 120 is coupled to the second terminal OUT1 of the amplifier circuit 110. The second terminal E2 of the switch circuit 120 is coupled to the coupler 130. The third terminal E3 of the switch circuit 120 can be coupled to a low noise amplifier LNA. The switch circuit 120 is used to perform a switching action so that its second terminal E2 can be coupled to its first terminal E1, or coupled to its third terminal E3. Specifically, on the one hand, when the wireless signal transceiver is in a signal transmission mode, the first terminal E1 of the switch circuit 120 can be coupled to its second terminal E2. On the other hand, when the wireless signal transceiver is in a signal reception mode, the third terminal E3 of the switch circuit 120 can be coupled to its second terminal E2.

[0010] The coupler 130 includes a first coupling element 131 and a second coupling element 132. The coupler 130 has an input terminal CPin, an output terminal CPout, a coupling terminal CPL and an isolation terminal CPisL. Among them, the first end of the first coupling element 131 is coupled to the input terminal CPin of the coupler 130, the second end of the first coupling element 131 is coupled to the output terminal CPout of the coupler 130, and can be coupled to a signal transmission terminal. The signal transmission terminal is, for example, an antenna terminal. The first end of the second coupling element 132 is coupled to the coupling terminal CPL of the coupler 130, and the second end of the second coupling element 132 is coupled to the isolation terminal CPisL of the coupler 130. In addition, the load 140 is coupled between the isolation terminal CPisL of the coupler 130 and the reference voltage terminal VR1, and the coupling terminal CPL can output a coupling signal to perform power detection.

[0011] In the present embodiment, the first end of the bonding wire W1 is coupled to the first end of the first coupling element 131, and the second end of the bonding wire W1 is coupled to the second end of the first coupling element 131. That is to say, the bonding wire W1 and the first coupling element 131 can be arranged in parallel. When performing the transmission action of the radio frequency signal, the bonding wire W1 can be used as a transmission medium for part of the energy of the radio frequency signal, and reduce the insertion power loss of the amplifier circuit 110 caused by the switch circuit 120. Therefore, the power of the coupled signal output by the coupler 130 can be correctly detected, and the mismatch between the amplifier circuit 110 and the switch circuit 120 can be reduced, effectively improving the overall performance of the system. In the present embodiment, the length of the first coupling element 131 and the bonding wire W1 can be substantially equal. In actual situations, the length of the first coupling element 131 can have a certain error value with the length of the bonding wire W1, for example, within ±10%. It is worth mentioning that in order to reduce the influence of the bonding wire W1 on the transmission action of the RF signal on the first coupling element 131 , the signal coupling amount between the first coupling element 131 and the bonding wire W1 may be less than a preset threshold.

[0012] The magnitude of the above coupling amount can be achieved by adjusting the distance between the bonding wire W1 and the first coupling element 131. The bonding wire W1 can be an arc-shaped wire, and is connected between the first end and the second end of the first coupling element 131. In this case, by increasing the arc height of the bonding wire W1, the signal coupling amount between the first coupling element 131 and the bonding wire W1 can be reduced. The above threshold value can be set by technicians according to the actual application state of the front-end circuit 100, and there is no specific limitation.

[0013] Please refer to the following FIG. 2A to FIG. 2D , FIG. 2A to FIG. 2D They are schematic diagrams of multiple implementations of bonding wires on the first coupling element in the front-end circuit of the embodiment of the present invention. Figure 2A In the embodiment, the coupler 200 includes a first coupling element 231 and a second coupling element 232. One end of the first coupling element 231 is coupled to a first end of the input terminal CPin of the coupler 200, and is also coupled to the pad PD1. The other end of the first coupling element 231 is coupled to a second end of the output terminal CPout of the coupler 200, and is also coupled to the pad PD2. The bonding wire W1 is arranged between the pads PD1 and PD2, wherein one end of the bonding wire W1 is coupled to the pad PD1, and the other end of the bonding wire W1 is coupled to the pad PD2, and is connected in parallel with the first coupling element 231. In the present embodiment, the bonding wire W1 can be an arc-shaped wire that is connected across the first coupling element 231. In addition, by controlling the arc height of the bonding wire W1, the signal coupling amount between the bonding wire W1 and the first coupling element 231 can be controlled.

[0014] On the other hand, in this embodiment, the second coupling element 232 is coupled between the isolation terminal CPisL and the coupling terminal CPL of the coupler 200. The isolation terminal CPisL is also coupled to one end of the load 240, and the other end of the load 240 is coupled to the reference voltage terminal VR1, wherein the reference voltage terminal VR1 is used to receive a reference voltage. The reference voltage terminal VR1 can be a ground terminal.

[0015] exist Figure 2B In the embodiment, a plurality of bonding wires W1 and W2 are arranged between the bonding pads PD1 and PD2. The bonding wires W1 and W2 are both connected in parallel with the first coupling element 231. Similarly, by controlling the arc height of the bonding wires W1 and W2, the signal coupling amount between the bonding wires W1 and W2 and the first coupling element 231 can be controlled.

[0016] It is worth mentioning that in other embodiments of the present invention, the number of bonding wires disposed on the bonding pads PD1 and PD2 may be greater than 2. Technicians may adjust the number of bonding wires according to actual conditions, and there is no specific limitation. Figure 2A as well as Figure 2B The illustrated embodiments are merely illustrative examples and are not intended to limit the scope of protection of the present invention.

[0017] exist Figure 2C In the embodiment, a relay pad IPD1 may be provided around the coupler 200. The bonding wire W1 may be split into bonding sub-wires SW1 and SW2. Among them, one end of the bonding sub-wire SW1 is coupled to the pad PD1, and the other end of the bonding sub-wire SW1 is coupled to the relay pad IPD1; one end of the bonding sub-wire SW2 is coupled to the relay pad IPD1, and the other end of the bonding sub-wire SW2 is coupled to the pad PD2. In this embodiment, by setting the position of the relay pad IPD1, the distance between the bonding wire W1 and the first coupling element 231 can be adjusted, and the signal coupling amount between the bonding wire W1 and the first coupling element 231 can be further adjusted. In addition, by splitting the bonding wire W1 into bonding sub-wires SW1 and SW2, and forming the bonding sub-wires SW1 and SW2 between the fixedly set welding pad PD1, the relay welding pad IPD1, and the welding pad PD2, the bonding wire W1 can have a relatively stable shape, thereby reducing the possibility that the excessively long bonding wire W1 will shake during the processing or use of the coupler 200 and affect the signal coupling amount between the bonding wire W1 and the first coupling element 231, thereby effectively maintaining the stability of the performance of the coupler 200.

[0018] exist Figure 2DIn the embodiment, a plurality of relay pads IPD1-IPDN may be arranged around the coupler 200. Correspondingly, the bonding wire W1 may be split into N+1 bonding sub-wires SW1-SWN+1. The bonding sub-wires SW1-SWN+1 are respectively connected in series with a plurality of relay pads IPD1-IPDN in sequence to couple between the bonding pad PD1 and the bonding pad PD2.

[0019] It is worth mentioning that in this embodiment, the number of relay pads IPD1-IPDN can be greater than 1 and can be determined by the technicians without fixed restrictions. Figure 2C In the embodiment, the length of the first coupling element 131 and the total length of the bonding sub-wires SW1 and SW2 may be substantially equal. Figure 2D In the embodiment, the length of the first coupling element 131 and the total length of the bonded sub-wires SW1 to SWN+1 can be substantially equal. Specifically, the length of the first coupling element 131 and the total length of the bonded sub-wires SW1 and SW2 can have a certain error value, for example, within ±10%; the length of the first coupling element 131 and the total length of the bonded sub-wires SW1 to SWN+1 can have a certain error value, for example, within ±10%.

[0020] Please refer to Figure 3 , Figure 3 is a schematic diagram of an amplifier circuit in a front-end circuit of an embodiment of the present invention. The amplifier circuit 300 includes a power amplifier PA and an inductor L1. The input end of the power amplifier PA is coupled to the input end IN1 of the amplifier circuit 300. The input end of the power amplifier PA is used to receive the radio frequency signal RFin to be amplified. The output end OUTA of the power amplifier PA is coupled to the inductor L1, and the output end OUTA of the power amplifier PA is used to transmit the amplified radio frequency signal ARF to the inductor L1. The other end of the inductor L1 is coupled to the terminal E31, and then coupled to the output end OUT1 of the amplifier circuit 300 through the capacitor C1. In addition, in this embodiment, the amplifier circuit 300 also includes a capacitor C2. The capacitor C2 can be coupled between the terminal E31 and the reference ground terminal VR2.

[0021] In this embodiment, the capacitor C1 can provide a DC isolation effect; the inductor L1 and the capacitor C2 can be used to form a matching circuit, coupled to the output terminal OUTA of the power amplifier PA. The matching circuit can also be replaced by a capacitor and an inductor network of other coupling forms, and the order of the inductor L1 and the capacitors C1 and C2 can also be adjusted as needed without specific restrictions. In addition, the circuit architecture of the power amplifier PA can be implemented by any power amplifier circuit known to those skilled in the art without specific restrictions.

[0022] Please refer to Figure 4 , Figure 44 is a schematic diagram of a semiconductor device according to an embodiment of the present invention. The semiconductor device 400 includes a first chip 410, a second chip 420, and a third chip 430. The first chip 410 has an amplifier circuit 411 and pads PD41 and PD42. The first terminal IN1 of the amplifier circuit 411 is coupled to the pad PD41, and the second terminal OUT1 of the amplifier circuit 411 is coupled to the pad PD42. The first terminal IN1 of the amplifier circuit 411 can be its input terminal, and the second terminal OUT1 of the amplifier circuit 411 can be its output terminal. For circuit details of the amplifier circuit 411, see Figure 3 The embodiments of the present invention will not be described in detail here.

[0023] The second chip 420 has a switch circuit 421 and pads PD43, PD44 and PD45. The first end E1 of the switch circuit 421 is coupled to the pad PD43, the second end E2 of the switch circuit 421 is coupled to the pad PD45, and the third end E3 of the switch circuit 421 is coupled to the pad PD44. The switch circuit 421 can be switched so that its second end E2 can be coupled to its first end E1 or third end E3. For circuit details of the switch circuit 421, see Figure 1 The embodiments of the present invention will not be described in detail here.

[0024] In addition, the third chip 430 has a coupler 431, pads PD46 to PD48, and a load 432. The input terminal CPin of the coupler 431 is coupled to the pad PD46; the output terminal CPout of the coupler 431 is coupled to the pad PD47; the coupling terminal CPL of the coupler 431 is coupled to the pad PD48; and the isolation terminal CPisL of the coupler 431 is coupled to the load 432. The coupler 431 has a first coupling element and a second coupling element. The first coupling element is coupled between the input terminal CPin and the output terminal CPout, and the second coupling element is coupled between the coupling terminal CPL and the isolation terminal CPisL. For circuit details of the coupler 431, please refer to Figure 1 The embodiments of the present invention will not be described in detail here.

[0025] Please note that on the third chip 430, the bonding wire W1 is disposed between the pads PD46 and PD47, and the bonding wire W1 is connected in parallel with the first coupling element in the coupler 431. The bonding wire W1 can reduce the insertion power loss that may be generated by the amplifier circuit 411, thereby improving the performance of the system.

[0026] Incidentally, in other embodiments of the present invention, one or more relay pads may be provided on the third chip 430, and the bonding wire W1 may be split into multiple segments of bonding sub-wires to sequentially connect between the bonding pad PD46, the relay pad, and the bonding pad PD47. Figure 2Cas well as Figure 2D The implementation method will not be described in detail here.

[0027] On the other hand, the semiconductor device 400 electrically couples the second end OUT1 of the first chip 410 and the first end E1 of the second chip 420 by disposing a bonding wire W41 between the bonding pad PD42 and the bonding pad PD43. The semiconductor device 400 can also electrically couple the second end E2 of the second chip 420 and the input end CPin of the third chip 430 by disposing a bonding wire W42 between the bonding pad PD46 and the bonding pad PD45.

[0028] Please also refer to Figure 3 , the matching circuit is arranged between the power amplifier PA and the switch circuit 421. It is worth mentioning that, in the present embodiment, the power amplifier in the amplifier circuit 411 and all the matching circuits can be arranged on the first chip 410, for example, the inductor L1 and the capacitor C2 are arranged on the first chip 410. In other embodiments, only the power amplifier in the amplifier circuit 411 and part of the matching circuit can be arranged on the first chip 410, and the other part of the matching circuit can be arranged on the second chip 420, for example, part of the inductor L1 and the capacitor C2 are arranged on the first chip 410, and the other part is arranged on the second chip 420. Alternatively, only the amplifier circuit 411 can be arranged on the first chip 410, and all the matching circuits can be arranged on the second chip 420, for example, the inductor L1 and the capacitor C2 are arranged on the second chip 420.

[0029] In summary, in the front-end device of the present invention, by arranging the switch circuit between the amplifier circuit and the coupler, and arranging the bonding wire connected in parallel with the first coupling element on the first coupling element of the coupler, the insertion power loss of the amplifier circuit can be reduced, the power of the coupled signal output by the coupler can be correctly detected, and the mismatch between the amplifier circuit and the switch circuit can be reduced, thereby effectively improving the overall performance of the system.

Claims

1. A front-end circuit, characterized in that: include: An amplifier circuit having a first end for receiving a radio frequency signal to be amplified; A switch circuit having a first terminal coupled to a second terminal of the amplifier circuit; A coupler having a first coupling element and a second coupling element arranged adjacent to each other, wherein a first end of the first coupling element is coupled to a second end of the switch circuit, and a second end of the first coupling element is coupled to a signal transmission end; as well as At least one bonding wire has a first end coupled to the first end of the first coupling element, and a second end of the bonding wire coupled to the second end of the first coupling element.

2. The front-end circuit according to claim 1, characterized in that: The bonding wire is arranged in parallel with the first coupling element.

3. The front-end circuit according to claim 1, characterized in that: The first end of the first coupling element is coupled to a first pad, the second end of the first coupling element is coupled to a second pad, the first end of the bonding wire is coupled to the first pad, and the second end of the bonding wire is coupled to the second pad.

4. The front-end circuit according to claim 3, characterized in that: The bonding wire is a first bonding wire, and the front-end circuit further includes a second bonding wire connected in parallel with the first bonding wire.

5. The front-end circuit according to claim 3, characterized in that: The bonding wire includes a first bonding sub-wire and a second bonding sub-wire, wherein a first end of the first bonding sub-wire is coupled to the first soldering pad, a second end of the first bonding sub-wire is coupled to a relay soldering pad, a first end of the second bonding sub-wire is coupled to the relay soldering pad, and a second end of the second bonding sub-wire is coupled to the second soldering pad.

6. The front-end circuit according to claim 1, characterized in that: The bonding wire further comprises a plurality of bonding sub-wires, and the plurality of bonding sub-wires are alternately arranged in series with a plurality of relay pads to be coupled between the first pad and the second pad.

7. The front-end circuit according to claim 1, characterized in that: The length of the first coupling element is substantially equal to the length of the bonding wire.

8. The front-end circuit according to claim 1, characterized in that: The signal coupling amount between the first coupling element and the bonding wire is less than a threshold.

9. The front-end circuit according to claim 1, characterized in that: The switch circuit has a third terminal, and the third terminal of the switch circuit is coupled to a low noise amplifier.

10. The front-end circuit according to claim 1, characterized in that: A first end of the second coupling element is coupled to a coupling end of the coupler, and a second end of the second coupling element is coupled to a load.

11. The front-end circuit according to claim 1, characterized in that: The amplification circuit includes a power amplifier and an inductor, an input end of the power amplifier is used to receive the RF signal to be amplified, an output end of the power amplifier is used to transmit the amplified RF signal, a first end of the inductor is coupled to the output end of the power amplifier, and a second end of the inductor is coupled to the first end of the switch circuit.

12. The front-end circuit according to claim 11, characterized in that: The amplifier circuit further includes at least one capacitor coupled to the inductor.

13. A semiconductor device, characterized in that: include: A first chip is used to set an amplifier circuit, a first end of which receives a radio frequency signal to be amplified; A second chip is used to set a switch circuit, wherein the switch circuit has a first end coupled to a second end of the amplifier circuit; a third chip, used to set a coupler, the coupler having a first coupling element and a second coupling element arranged adjacent to each other, a first end of the first coupling element coupled to a second end of the switch circuit, and a second end of the first coupling element coupled to a signal transmission end; as well as At least one bonding wire has a first end coupled to the first end of the first coupling element, and a second end of the bonding wire coupled to the second end of the first coupling element.

14. The semiconductor device according to claim 13, wherein: The bonding wire is arranged in parallel with the first coupling element.

15. The semiconductor device according to claim 13, wherein: The third chip has a first pad and a second pad, the first end of the first coupling element is coupled to the first pad, the second end of the first coupling element is coupled to the second pad, the first end of the bonding wire is coupled to the first pad, and the second end of the bonding wire is coupled to the second pad.

16. The semiconductor device according to claim 13, wherein: The bonding wire is a first bonding wire, and the semiconductor device further includes a second bonding wire connected in parallel with the first bonding wire.

17. The semiconductor device according to claim 13, wherein: The third chip also has a relay pad, and the bonding wire includes a first bonding sub-wire and a second bonding sub-wire, wherein a first end of the first bonding sub-wire is coupled to the first pad, a second end of the first bonding sub-wire is coupled to the relay pad, a first end of the second bonding sub-wire is coupled to the relay pad, and a second end of the second bonding sub-wire is coupled to the second pad.

18. The semiconductor device according to claim 13, wherein: The bonding wire further comprises a plurality of bonding sub-wires, and the plurality of bonding sub-wires are alternately arranged in series with a plurality of relay pads to be coupled between the first pad and the second pad.

19. The semiconductor device according to claim 13, wherein: The length of the first coupling element is substantially equal to the length of the bonding wire.

20. The semiconductor device according to claim 13, wherein The amplification circuit includes a power amplifier, an input end of the power amplifier is used to receive the radio frequency signal to be amplified, and an output end of the power amplifier is used to transmit the amplified radio frequency signal. The semiconductor device also includes a matching circuit coupled between the power amplifier and the switching circuit, a part of the matching circuit is arranged on the first chip, and another part of the matching circuit is arranged on the second chip.

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