Temperature compensation equalizer MMIC

Abstract

The invention belongs to the technical field of microwave integrated circuits, and particularly provides a temperature compensation equalizer MMIC, which is used for meeting the design requirement of positive slope gain in a broadband high-power amplifier and solving the problem of gain reduction caused by temperature rise of the broadband high-power amplifier. The circuit comprises a temperature compensation module and an equalizer module, the equalizer module is connected between a radio frequency input end and a radio frequency output end, and the equalization compensation function of the circuit is achieved; and the temperature compensation module outputs a temperature compensation signal to the direct current bias end of the equalizer module to realize the temperature compensation function of the circuit. In conclusion, the equalizer module is arranged between the radio frequency input port and the radio frequency output port and is used for compensating the high-frequency gain of the circuit; meanwhile, a temperature compensation module is designed to realize gain temperature compensation; finally, the gain flatness of the amplifier is increased on the aspect of frequency, and the temperature sensitivity of the amplifier is reduced on the aspect of temperature.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave integrated circuits, and in particular provides a temperature compensation equalizer MMIC. Background Art

[0002] In the RF / microwave field, the design of amplifiers faces many problems. For example, in the design, it is usually hoped that the amplifier gain has a positive slope. However, in actual applications, it is difficult for broadband high-power amplifiers to achieve positive slope gain. Therefore, it is necessary to set an equalizer at the front end of the amplifier in the RF / microwave channel to make the overall gain as positive or flat as possible. At the same time, the broadband high-power amplifier will generate a lot of heat during operation. As the temperature rises, the characteristics of various components such as transistors in the amplifier will change, causing the amplifier gain to decrease. In view of the above problems, the present invention provides a temperature compensation equalizer MMIC to achieve functional integration of temperature compensation and gain compensation. Summary of the invention

[0003] The purpose of the present invention is to provide a temperature compensation equalizer MMIC to solve many problems in the prior art. The present invention sets an equalizer module between the RF input port and the output port to compensate for the high-frequency gain of the circuit; and designs a temperature compensation module to adaptively adjust the insertion loss of the equalizer according to the temperature.

[0004] To achieve the above object, the technical solution adopted by the present invention is:

[0005] A temperature compensation equalizer MMIC, characterized in that it includes: a temperature compensation module and an equalizer module, wherein the equalizer module is connected between a radio frequency input terminal and a radio frequency output terminal to realize the equalization compensation function of the circuit; and the temperature compensation module outputs a temperature compensation signal to a DC bias terminal of the equalizer module to realize the temperature compensation function of the circuit.

[0006] Furthermore, the temperature compensation module includes: resistors R1~R3, diodes D1~D3 and enhanced logic field effect transistor LEF1; wherein, the gate of the enhanced logic field effect transistor LEF1 is grounded through the resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to the DC power supply VDC through the resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded through the resistor R3; the anode of the diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of the diode D1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the anode of the diode D3, and the cathode of the diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and the resistor R3, and output to the DC bias end of the equalizer module.

[0007] Furthermore, the resistors R1 to R3 are all thermistors.

[0008] Furthermore, the DC power supply VDC is -5V.

[0009] Furthermore, the equalizer module adopts a switch π-type equalizer.

[0010] Furthermore, the equalizer module includes: resistors R4~R7, inductors L1~L2, switches SW1~SW2 and capacitor C1; wherein the gate of the switch tube SW1 is connected to the gate of the switch tube SW2 and connected to the resistor R4, and the other end of the resistor R4 serves as a DC bias end; the capacitor C1 is connected between the drain of the switch tube SW1 and the drain of the switch tube SW2, the resistor R7 is connected in parallel with the capacitor C1, and the two ends after parallel connection serve as a radio frequency input end and a radio frequency output end; the source of the switch tube SW1 is connected to the ground through the resistor R5 and the inductor L1 in sequence, and the source of the switch tube SW2 is connected to the ground through the resistor R6 and the inductor L2 in sequence.

[0011] Based on the above technical solution, the beneficial effects of the present invention are:

[0012] The present invention provides a temperature compensation equalizer MMIC, which is a monolithic integrated circuit integrating a new temperature compensation structure and a switch type equalizer. The temperature compensation module adopts a layout design of multiple temperature sensitive resistors, diodes and transistors, so that the control voltage changes regularly with the temperature; the equalizer module adopts a switch π-type equalizer structure with a high-frequency compensation structure, so that the attenuation of the signal path presents a positive slope trend of low high frequency and high low frequency; at the same time, the on-off degree of the switch is controlled by the control voltage output by the temperature compensation module to realize the overall attenuation control at different temperatures, that is, the trend of small attenuation at high temperature and large attenuation at low temperature; in summary, the present invention has the advantages of: solving the difficulty of realizing positive slope gain in the design of broadband high-power amplifier on a single chip, and overcoming the problem that the amplifier gain is reduced due to the change of characteristics of various components such as transistors in the amplifier due to the increase of temperature, thereby increasing the gain flatness in frequency and reducing the temperature sensitivity of the amplifier in temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a circuit schematic diagram of the temperature compensation equalizer MMIC provided by the present invention.

[0014] Figure 2 Result diagram of input and output voltage standing wave ratio of the temperature compensation equalizer MMIC at various temperatures in an embodiment of the present invention.

[0015] Figure 3 This is a graph showing the insertion loss results of the temperature-compensated equalizer MMIC according to an embodiment of the present invention at various temperatures as the frequency changes.

[0016] Figure 4 This is a graph showing the insertion loss results of the temperature-compensated equalizer MMIC according to an embodiment of the present invention as the temperature changes at various frequencies. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and beneficial effects of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments.

[0018] This embodiment provides a temperature compensation equalizer MMIC, such as Figure 1 As shown, it includes: a temperature compensation module and an equalizer module, wherein the equalizer module is connected between the RF input terminal and the RF output terminal to realize the equalization compensation function of the circuit; the temperature compensation module outputs a temperature compensation signal to the DC bias terminal of the equalizer module to realize the temperature compensation function of the circuit.

[0019] Further, the temperature compensation module includes: resistors R1, R2, R3, diodes D1, D2, D3, and an enhanced logic field effect transistor LEF1; wherein the gate of the enhanced logic field effect transistor LEF1 is grounded through the resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to the DC power supply VDC through the resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded through the resistor R3; the anode of the diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of the diode D1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the anode of the diode D3, and the cathode of the diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and the resistor R3, and output to the DC bias end of the equalizer module;

[0020] Furthermore, the resistors R1, R2, and R3 are all thermistors;

[0021] Furthermore, the DC power supply VDC is -5V;

[0022] In terms of working principle, the temperature compensation module uses temperature-sensitive resistors and diodes to control the gate voltage of the enhanced logic field effect transistor LEF1 through voltage division by the resistors and diodes, thereby adaptively adjusting the drain current of the enhanced logic field effect transistor LEF1 according to the temperature, and then dividing the voltage through the resistors on the drain and source paths of the enhanced logic field effect transistor LEF1, and outputting a temperature compensation signal to control the DC bias of the equalizer module.

[0023] Furthermore, the equalizer module includes: resistors R4, R5, R6, R7, inductors L1, L2, switches SW1, SW2, and capacitor C1; wherein the gate of the switch SW1 is connected to the gate of the switch SW2 and connected to the resistor R4, and the other end of the resistor R4 serves as a DC bias end; the capacitor C1 is connected between the drain of the switch SW1 and the drain of the switch SW2, the resistor R7 is connected in parallel with the capacitor C1, and the two ends after parallel connection serve as a radio frequency input end and a radio frequency output end; the source of the switch SW1 is connected to ground through the resistor R5 and the inductor L1 in sequence, and the source of the switch SW2 is connected to ground through the resistor R6 and the inductor L2 in sequence.

[0024] In terms of working principle, the equalizer module is a switch π-type equalizer composed of several transistors, resistors, capacitors and inductors, wherein the parallel resistor R7 and capacitor C1 constitute the main path between the RF input terminal and the RF output terminal, the source of the parallel transistor is connected in series with the resistor and inductor to the ground, and the gate of the parallel transistor is connected to the temperature compensation signal output by the temperature compensation module, and the DC bias of the equalizer module is controlled by the temperature compensation signal.

[0025] The beneficial effects of the present invention are described in detail below in conjunction with simulation tests.

[0026] The temperature-compensated equalizer MMIC proposed in this embodiment is designed based on the gallium arsenide process, and its operating frequency is 3GHz to 20GHz, the bandwidth is 17GHz, the center point is 11.5GHz, the relative bandwidth is 148%, the compensation range is -55℃ to 125℃, and the compensation amount is 1dB; at 25℃, the 3GHz insertion loss is 4.19dB, and the 20GHz insertion loss is 2.53dB.

[0027] More specifically, Figure 2 The figure shows the input and output voltage standing wave ratio of the temperature compensated equalizer MMIC at various temperatures. The test temperature is set at intervals of 10°C within the range of -55°C to 125°C, which are -55°C, -45, ..., -5°C, 5°C, ..., 115°C, 125°C, a total of 19 test temperatures. Figure 2 From top to bottom, the input and output voltage standing wave ratios of the temperature-compensated equalizer MMIC at 19 test temperatures are shown in the figure. It can be seen from the figure that the voltage standing wave ratio is below 1.4 at each temperature from 3 to 20 GHz; Figure 3 The figure shows the insertion loss of the temperature compensated equalizer MMIC as a function of frequency at various temperatures. Figure 3 From bottom to top in the figure are the insertion losses of the temperature compensated equalizer MMIC at 19 test temperatures. It can be seen from the figure that the insertion loss shows a positive slope change trend at all temperatures, which is consistent with the characteristic that the equalizer can compensate for the gain; Figure 4The figure shows the insertion loss of the temperature compensated equalizer MMIC at various frequencies as it changes with temperature. A total of 10 test frequencies are set at equal intervals in the range of 3 GHz to 20 GHz, namely 3 GHz, ..., 20 GHz. Figure 4 From bottom to top in the figure are the insertion losses of the temperature compensated equalizer MMIC at 10 test frequencies as the temperature changes. It can be seen from the figure that the insertion loss at all frequencies decreases with the increase of temperature, which meets the design requirements of temperature compensation.

[0028] In summary, the present invention provides a temperature compensated equalizer MMIC, which realizes the functions of positive slope gain and temperature compensation in the design of a broadband high-power amplifier on a single chip, increases the gain flatness in frequency, and reduces the temperature sensitivity of the amplifier in temperature.

[0029] The above description is only a specific implementation mode of the present invention. Any feature disclosed in this specification, unless otherwise stated, can be replaced by other alternative features that are equivalent or have similar purposes; all the disclosed features, or all the steps in the methods or processes, except for mutually exclusive features and / or steps, can be combined in any way.

Claims

1. A temperature compensation equalizer MMIC, characterized in that: include: A temperature compensation module and an equalizer module, wherein the equalizer module is connected between the RF input terminal and the RF output terminal to realize the circuit's equalization compensation function; the temperature compensation module outputs a temperature compensation signal to the DC bias terminal of the equalizer module to realize the circuit's temperature compensation function.

2. The temperature compensation equalizer MMIC according to claim 1, characterized in that: The temperature compensation module includes: resistors R1-R3, diodes D1-D3 and enhanced logic field effect transistor LEF1; wherein, the gate of the enhanced logic field effect transistor LEF1 is grounded through the resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to the DC power supply VDC through the resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded through the resistor R3; the anode of the diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of the diode D1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the anode of the diode D3, and the cathode of the diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and the resistor R3, and output to the DC bias end of the equalizer module.

3. The temperature compensation equalizer MMIC according to claim 2, characterized in that: The resistors R1 to R3 are all thermistors.

4. The temperature compensation equalizer MMIC according to claim 1, characterized in that: The equalizer module adopts a switch π-type equalizer.

5. The temperature compensation equalizer MMIC according to claim 4, characterized in that: The equalizer module includes: resistors R4~R7, inductors L1~L2, switches SW1~SW2 and capacitor C1; wherein the gate of the switch SW1 is connected to the gate of the switch SW2 and connected to the resistor R4, and the other end of the resistor R4 serves as a DC bias end; the capacitor C1 is connected between the drain of the switch SW1 and the drain of the switch SW2, the resistor R7 is connected in parallel with the capacitor C1, and the two ends after parallel connection serve as a radio frequency input end and a radio frequency output end; the source of the switch SW1 is connected to ground through the resistor R5 and the inductor L1 in sequence, and the source of the switch SW2 is connected to ground through the resistor R6 and the inductor L2 in sequence.

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