A log composite antenna integrated niobium telluride terahertz photodetector and a manufacturing method thereof

Abstract

The present application relates to a kind of log composite antenna integrated niobium telluride terahertz photodetector and preparation method, is obtained by mechanical stripping niobium telluride material by dry transfer to intrinsic high resistance silicon substrate, using ultraviolet lithography technology to make source, drain electrode and corresponding antenna structure, and using electron beam evaporation process, preparation into log composite antenna niobium telluride terahertz photodetector.Compared with traditional log antenna, the field intensity gain of the log composite antenna structure to terahertz wave is higher, so that the log composite antenna niobium telluride terahertz photodetector has higher sensitivity to terahertz wave.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terahertz detection devices, and relates to a log composite antenna integrated tellurium niobium terahertz photoelectric detector and a manufacturing method thereof. BACKGROUND

[0002] The frequency range of terahertz is 0.1 THz-10 THz, and has unique physical characteristics, such as high penetration, low photon energy, high frequency, wide bandwidth and the like. The terahertz wave band has great application value, such as nondestructive testing, security inspection, medical imaging, 6G mobile communication, terahertz radar and the like. However, due to the fact that the terahertz wave band is between microwave electronics and infrared photonics, the traditional microwave detection technology or infrared photon detection technology is difficult to be used for detecting the terahertz wave band. Although the existing pyroelectric terahertz detector can achieve high sensitivity, the response time is long, about millisecond level. The thermal radiation meter can achieve high sensitivity, but needs to work in a low-temperature environment, increasing the cost. Therefore, it is necessary to develop a terahertz detector which has a response to the terahertz wave band and a short response time at room temperature.

[0003] Meanwhile, for the existing terahertz wave detection, the terahertz antenna needs to be optimized and designed, so that the terahertz antenna can achieve higher gain effect, otherwise the amplification of the terahertz signal will additionally increase the detection cost of the terahertz signal. In order to adapt to the low-temperature working environment, a refrigeration device needs to be additionally arranged, causing a large equipment volume. The existing traditional terahertz antenna structure can effectively amplify the field strength of the terahertz wave, but the terahertz antenna needs to be further optimized to achieve more sensitive detection of the terahertz wave, so as to reduce the power of the terahertz source and further reduce the cost of the terahertz wave detection. SUMMARY

[0004] The present application aims to provide a log composite antenna integrated tellurium niobium terahertz photoelectric detector and a manufacturing method thereof, and solves the problems that the existing pyroelectric terahertz detector can achieve high sensitivity, but the response time is long, about millisecond level; the thermal radiation meter can achieve high sensitivity, but needs to work in a low-temperature environment, increasing the cost and the volume of the equipment device.

[0005] To achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0006] A log composite antenna integrated tellurium niobium terahertz photoelectric detector, comprising a high-resistance silicon substrate and a channel material layer arranged on the high-resistance silicon substrate; characterized in that: the channel material layer is made of tellurium niobium; source electrodes and drain electrodes are arranged at two ends of the channel material layer.

[0007] The source electrode comprises, from outside to inside, a source electrode plate, a source electrode lead, a source electrode logarithmic antenna and a source electrode antenna; the drain electrode comprises, from outside to inside, a drain electrode plate, a drain electrode lead, a drain electrode logarithmic antenna and a drain electrode antenna;

[0008] The source electrode antenna and the drain electrode antenna form a channel at the center of the channel material layer;

[0009] The source electrode antenna is a 90-degree spiral antenna, and the drain electrode antenna is also a 90-degree spiral antenna matched with the source electrode antenna, and the source electrode antenna and the drain electrode antenna form an S-shaped symmetrical channel in the channel material layer.

[0010] In the niobium telluride material, the atomic ratio of tellurium and niobium is 4:1.

[0011] The source electrode is made of chromium-gold composite metal, wherein the chromium metal layer is in contact with the channel material layer; the drain electrode is also made of chromium-gold composite metal, wherein the chromium metal layer is in contact with the channel material layer.

[0012] The manufacturing method of the niobium telluride terahertz photodetector based on logarithmic composite antenna integration as described above, step one, Raman spectrum scanning of the niobium telluride material, and selecting the niobium telluride material producing periodic lattice distortion;

[0013] Step two, thinning the niobium telluride material by mechanical peeling to form a thinner niobium telluride two-dimensional material, and transferring the niobium telluride two-dimensional material to a high-resistance silicon substrate by dry transfer;

[0014] Step three, exposure by ultraviolet lithography process, and then developing the photoresist to show the source electrode structure and drain electrode structure containing logarithmic composite antenna;

[0015] Step four, depositing chromium and gold materials on the channel material by electron beam evaporation process, and then preparing the source electrode and the drain electrode containing logarithmic composite antenna by peeling process, wherein the source electrode antenna and the drain electrode antenna are set to interweave, the source electrode antenna is a 90-degree spiral antenna, and the niobium telluride material S-shaped channel is formed at the center position of the channel material layer;

[0016] Step five, sticking the product of step four to a PCB board, and connecting the source electrode plate and the drain electrode plate to the lead electrode on the PCB board by bonding process to prepare the niobium telluride terahertz photodetector based on logarithmic composite antenna integration.

[0017] The advantages of the present application are: 1. Compared with the traditional logarithmic antenna, the logarithmic composite antenna structure can have higher gain on the field intensity of terahertz waves, thereby enhancing the photoelectric response and sensitivity of the niobium telluride material to terahertz waves; 2. The niobium telluride material belongs to the IC-CDW phase and has periodic lattice distortion, so that a zero-bias photocurrent can be generated on the terahertz waves at room temperature, and a photocurrent can be generated on the terahertz waves without external power supply, thereby reducing the detection cost of the terahertz waves; 3. The CDW in the niobium telluride material is used to detect the terahertz waves, so that the response time can be improved from milliseconds to microseconds, and high-speed and high-sensitivity room-temperature detection of the terahertz waves can be achieved; 4. Since the niobium telluride material is a two-dimensional van der Waals material, it is easy to realize large-area integration by CMOS process in the future, and can be applied to wearable devices, flexible displays, sensors and other electronic devices, so that the electronic devices can be more lightweight and flexible. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic diagram of a logarithmic antenna structure of the prior art;

[0019] Figure 2 is a schematic diagram of a logarithmic composite antenna structure in the present application;

[0020] Figure 3 is a Raman spectrum diagram of the niobium telluride material of the present application, wherein the abscissa represents the Raman shift, and the unit is cm -1 , and the ordinate is the normalized intensity;

[0021] Figure 4 is a gain diagram of the terahertz electric field of the logarithmic antenna structure of the prior art and the logarithmic composite antenna structure of the present application, wherein the abscissa is the terahertz frequency, and the unit is GHz, and the ordinate is the field intensity gain of the antenna structure on the terahertz waves;

[0022] Figure 5 is a photoelectric response spectrum of the niobium telluride terahertz photodetector with the logarithmic antenna of the prior art and the logarithmic composite antenna structure of the present application on different frequencies, wherein the abscissa is the frequency of the terahertz waves, and the unit is GHz, and the ordinate is the photocurrent generated by the terahertz detector on the terahertz waves, and the unit is mu A;

[0023] Figure 6 is a response time diagram of the niobium telluride terahertz photodetector based on the logarithmic composite antenna integration of the present application on the terahertz waves, wherein the abscissa is time, and the unit is mu s, and the ordinate is the normalized photocurrent.

[0024] In the figure: 1-source electrode plate; 2-source electrode lead; 3-source electrode logarithmic antenna; 4-drain electrode logarithmic antenna; 5-drain electrode lead; 6-drain electrode plate; 7-source electrode antenna; 8-drain electrode antenna; 9-channel material layer. Detailed Implementation

[0025] The present invention will be further described below with reference to the accompanying drawings. The drawings are for illustrative purposes only and should not be construed as limiting the scope of this patent.

[0026] To simplify the description of this embodiment, some components that are well-known to those skilled in the art but are not related to the main content of this invention may be omitted in the accompanying drawings or description. Additionally, for ease of description, some components in the drawings may be omitted, enlarged, or reduced, but these do not represent the actual product dimensions or the complete structure.

[0027] This invention discloses a niobium telluride terahertz photodetector based on logarithmic composite antenna integration, comprising a high-resistivity silicon substrate and a channel material layer 9 disposed on the high-resistivity silicon substrate; the channel material layer 9 is made of niobium telluride, preferably, the atomic ratio of tellurium to niobium in the niobium telluride material is 4:1.

[0028] like Figure 2 As shown, a source electrode and a drain electrode are respectively provided at both ends of the channel material layer 9; the source electrode includes a source electrode plate 1, a source electrode lead 2, a source electrode logarithmic antenna 3 and a source electrode antenna 7 connected in sequence from the outside to the inside; the drain electrode includes a drain electrode plate 6, a drain electrode lead 5, a drain electrode logarithmic antenna 4 and a drain electrode antenna 8 connected in sequence from the outside to the inside.

[0029] The source electrode antenna 7 and the drain electrode antenna 8 form a channel at the center of the channel material layer 9; and as shown in the figure Figure 1 Unlike existing logarithmic antennas, which only have equally spaced channels, this type of antenna... Figure 2 The logarithmic composite antenna of the present invention shown has a source electrode antenna 7 and a drain electrode antenna 8 that are 90-degree spiral antennas. The source electrode antenna 7 and the drain electrode antenna 8 are intertwined to form an S-shaped symmetrical channel on the channel material layer 9.

[0030] The source electrode is made of chromium-gold composite metal, with gold on the top layer and chromium on the bottom layer. The chromium metal layer is in contact with the channel material layer 9, and the upper gold layer is connected to the external lead electrode. The drain electrode is also made of chromium-gold composite metal, with gold on the top layer and chromium on the bottom layer. The chromium metal layer is in contact with the channel material layer 9, and the upper gold layer is connected to the external lead electrode.

[0031] The above-described method for manufacturing a niobium telluride terahertz photodetector based on logarithmic composite antenna integration.

[0032] Step 1: Raman spectroscopy was performed on the niobium telluride material to determine that the niobium telluride material underwent a charge density wave phase transition at room temperature and exhibited the number of Raman modes in the distorted state. The niobium telluride material that produced periodic lattice distortion was then selected.

[0033] like Figure 3As shown, in addition to the Raman modes that the niobium telluride material itself should have, there are also Raman modes due to the periodic distortion of the crystal lattice: E 1u , B 1u Therefore, we conclude that the material has a periodic lattice distortion at room temperature due to the charge density wave effect.

[0034] Step two, the niobium telluride material is thinned by mechanical exfoliation to form a thinner niobium telluride two-dimensional material, and the niobium telluride two-dimensional material is transferred to a high-resistance silicon substrate by dry transfer;

[0035] Step three, exposure is performed using an ultraviolet lithography process, and then a development process is used to make the photoresist show the source electrode structure and the drain electrode structure containing the logarithmic compound antenna;

[0036] Step four, chromium and gold materials are deposited on the channel material using an electron beam evaporation process, and then the source electrode and the drain electrode containing the logarithmic compound antenna are made by a stripping process, wherein the source electrode antenna 7 and the drain electrode antenna 8 are arranged as interwoven 90-degree spiral antennas, and an S-shaped channel of the niobium telluride material is formed at the center of the channel material layer 9;

[0037] Step five, the product of step four is adhered to a PCB board, and the source electrode plate 1 and the drain electrode plate 6 are connected to the lead electrodes on the PCB board by a bonding process to prepare a niobium telluride terahertz photodetector based on logarithmic compound antenna integration.

[0038] A microwave source is used to output terahertz waves by adding a tripler and a nonuple frequency module, a preamplifier is used to amplify the signal, and a lock-in amplifier is used to extract the terahertz signal detected by the terahertz detector. The ambient temperature for all measurements is room temperature, and the test conditions are all under zero bias voltage.

[0039] Figure 4 As shown is the gain of the electric field of the logarithmic compound antenna structure of the present application to terahertz. By comparing the gain of the electric field of the logarithmic compound antenna structure of the present application to terahertz with that of the prior art logarithmic antenna, it can be seen that the gain of the electric field of the logarithmic compound antenna structure of the present application to terahertz is about 3 times that of the prior art logarithmic antenna structure.

[0040] Figure 5 The photoelectric response spectra of the terahertz photodetector with the logarithmic antenna of the prior art and the niobium telluride terahertz photodetector based on logarithmic compound antenna integration of the present application to different frequencies are shown. By comparing the photoelectric response of the prior art with that of the present application, it can be seen that the niobium telluride terahertz detector based on the logarithmic compound antenna structure of the present application can produce a stronger photoelectric current signal to terahertz, thereby confirming the advantage of the present application over the prior art terahertz detector.

[0041] Figure 6 The present application is based on the response time diagram of the NbTe THz photodetector based on the logarithmic composite antenna structure to the THz wave. According to the definition of the response time, the rising time is the time consumed by the signal rising from 10% to 90% of the maximum signal, and the falling time is the time consumed by the signal falling from 90% to 10% of the maximum signal, so the rising time and the falling time of the present application are 2.2 and 2.3 microseconds respectively, both of which are in the order of microseconds, and the response time is much better than the millisecond-level response time of the pyroelectric detector to the THz wave at room temperature.

[0042] The above merely describes preferred embodiments of the present application, but is not intended to limit the scope of the present application. Any equivalent changes and modifications made according to the content of the present application patent application scope should be within the technical scope of the present application.

Claims

1. A log-periodic compound antenna integrated tellurium-niobium terahertz photodetector comprising a high-resistivity silicon substrate and a channel material layer (9) disposed on the high-resistivity silicon substrate; characterized in that: The channel material layer (9) is made of niobium telluride; the source electrode and the drain electrode are respectively arranged at two ends of the channel material layer (9); The source electrode comprises, from outside to inside, a source electrode plate (1), a source electrode lead (2), a source electrode logarithmic antenna (3) and a source electrode antenna (7); the drain electrode comprises, from outside to inside, a drain electrode plate (6), a drain electrode lead (5), a drain electrode logarithmic antenna (4) and a drain electrode antenna (8); The source electrode antenna (7) and the drain electrode antenna (8) form a channel at the center of the channel material layer (9); The source electrode antenna (7) is a 90-degree spiral antenna, and the drain electrode antenna (8) is also a 90-degree spiral antenna matched with the source electrode antenna (7); the source electrode antenna (7) and the drain electrode antenna (8) form an S-shaped symmetrical channel in the channel material layer (9).

2. The log-periodic composite antenna integrated tellurium-niobium terahertz photodetector according to claim 1, wherein: In the niobium telluride material, the atomic ratio of tellurium to niobium is 4:

1.

3. The log-composite antenna integrated NbTe photodetector based on claim 2, wherein: The source electrode is made of chromium-gold composite metal, and the chromium metal layer is in contact with the channel material layer (9); the drain electrode is also made of chromium-gold composite metal, and the chromium metal layer is in contact with the channel material layer (9).

4. The manufacturing method of the niobium telluride terahertz photodetector based on logarithmic composite antenna integration according to claim 3, characterized in that: Step one: Raman spectrum scanning is performed on the niobium telluride material to select the niobium telluride material that produces periodic lattice distortion; Step two: the niobium telluride material is thinned by mechanical peeling to form a thinner niobium telluride two-dimensional material, and the niobium telluride two-dimensional material is transferred to a high-resistance silicon substrate by dry transfer; Step three: exposure is performed by using ultraviolet lithography process, and then the photoresist is developed to show the source electrode structure and the drain electrode structure containing the logarithmic composite antenna; Step four: chromium and gold materials are deposited on the channel material by using electron beam evaporation process, and then the source electrode and the drain electrode containing the logarithmic composite antenna are prepared by peeling process, wherein the source electrode antenna (7) and the drain electrode antenna (8) are arranged as interlaced 90-degree spiral antennas, and an S-shaped channel of niobium telluride material is formed at the center position of the channel material layer (9); Step five: the product prepared in step four is adhered to a PCB board, and the source electrode plate (1) and the drain electrode plate (6) are connected to the lead electrodes on the PCB board by bonding process to prepare the niobium telluride terahertz photodetector based on logarithmic composite antenna integration.

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