Modular chemical mechanical polisher with simultaneous polishing and pad processing

Abstract

The present disclosure relates to a polishing module for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing module has a plurality of pads, such as polishing pads, disposed within a single polishing station. The pad is configured to remain fixed during processing, such as during polishing or buff, for example. Either an x-y elevated assembly or a head actuation assembly is coupled with the system body of the polishing module and is configured to move the carrier head over the pad. Between process operations, the polishing pad may be indexed to expose a new polishing pad to the carrier head.

Description

background field

[0001] Embodiments described herein relate generally to equipment used in electronic device fabrication, and more particularly to modular chemical mechanical polishing (CMP) systems that may be used to polish or planarize substrate surfaces during semiconductor device fabrication processes. Background Art

[0002] Chemical mechanical polishing (CMP) is commonly used in the manufacture of high-density integrated circuits to planarize or polish a layer of material deposited on a substrate. In a typical CMP process, a substrate is held in a carrier head that presses the back of the substrate against a polishing pad fixed to the surface of a rotating platform. The chemical and mechanical action provided by the polishing fluid and the relative motion of the substrate and the polishing pad removes material from the entire surface of the substrate material layer in contact with the polishing pad. Typically, after one or more CMP processes are completed, the polished substrate is further subjected to one or more post-CMP substrate processing operations. For example, the polished substrate can be further processed using a combination of one or more of cleaning, inspection, and measurement operations. Once the post-CMP operations are completed, the substrate can be removed from the CMP processing area and sent to the next device manufacturing process, such as lithography, etching, or deposition.

[0003] To conserve valuable manufacturing floor space and reduce labor costs, a CMP system typically includes a first section (e.g., a rear section) that includes multiple polishing stations and a second section (e.g., a front section) that is integrated with the first section to form a single polishing system. The first section may include one or more of post-CMP cleaning, inspection, and / or pre- or post-CMP metrology stations. Typically, the first section of a CMP system can be customized during the manufacture of the CMP system to more specifically meet the needs of a particular equipment customer.

[0004] The first section of a conventional CMP system is often overly complex and takes up too much valuable manufacturing floor space in order to achieve their maximum substrate throughput. One reason for poor throughput is that after performing multiple polishing processes on the polishing pad, the polishing process is stopped during a process to clean and / or repair the polishing pad. However, if sufficient cleaning and / or repair time is not provided, it has been found that defect levels on the substrates increase due to cross-contamination and polishing defect issues. Therefore, the cleaning and / or repair time limits the total substrate throughput through the CMP system. As a result, the throughput density of the CMP system (i.e., the number of substrates processed per unit area of ​​manufacturing floor space per unit time) can be undesirably limited by the execution of the cleaning and / or repair processes, which limits the number of polishing modules that can be used for processing in a standard CMP system configuration.

[0005] Therefore, what is needed in the art is a modular polishing system with improved substrate throughput density that addresses the problems described herein. Summary of the Invention

[0006] The present disclosure generally relates to chemical mechanical polishing (CMP) modules and customizable high-throughput modular CMP systems including the same. Embodiments herein relate to modular polishing systems comprised of stacked polishing modules that provide increased system throughput density and improved reliability compared to conventional polishing systems.

[0007] Embodiments of the present disclosure include a substrate polishing system comprising a plurality of polishing stations positioned in a stacked orientation. Each of the polishing stations comprises: a system body comprising one or more walls defining a processing area; a platform; and a head assembly. The platform is disposed within the processing area of ​​the system body and has a rectangular pad support surface configured to receive a non-axisymmetric polishing pad, wherein the long sides of the rectangular pad support surface are aligned in a first direction. The head assembly is disposed above the pad support surface of the platform. The head assembly comprises: a carrier head disposed above the pad support surface of the platform; a linear actuator coupled to a central guide rail support; and a support arm coupling the carrier head to the linear actuator, wherein the linear actuator is configured to position the carrier head and the support arm in the first direction. Embodiments may include one or more of the following features: a substrate polishing system in which the linear actuator is the sole means of generating relative motion between the carrier head and the non-axisymmetric polishing pad disposed on the rectangular pad support surface. Embodiments of the technology may include hardware, methods, or processes, or computer software on a computer-accessible medium.

[0008] A general aspect of the present disclosure includes a substrate polishing system. The substrate polishing system also includes: a system body, the system body including one or more walls defining a processing area. The system also includes: a first platform, the first platform being disposed in the processing area of ​​the system body. The system also includes: a second platform, the second platform being disposed in the processing area of ​​the system body. The system also includes: a central guide rail support, the central guide rail support being disposed between the first platform and the second platform and within the processing area of ​​the system body. The system also includes: a first head assembly, the first head assembly being disposed above one of the first platform or the second platform, the first head assembly may include a first carrier head and a first support arm, the first support arm coupling the first carrier head to the central guide rail support; a second head assembly, the second head assembly being disposed above one of the first platform or the second platform, the second head assembly may include a second carrier head and a second support arm, the second support arm coupling the second carrier head to the central guide rail support.

[0009] Embodiments of the present disclosure may further include a substrate polishing system comprising a plurality of polishing stations positioned in a stacked orientation. The substrate polishing system may include: a first polishing station configured to be positioned above a second polishing station. Each of the polishing stations includes: a system body comprising one or more walls defining a processing area; a platform; and a head assembly. The platform is disposed within the processing area of ​​the system body and has a rectangular top surface. The head assembly is disposed above the platform. An xy overhead assembly is disposed above the platform and is configured to actuate both the head assembly and the slurry module in one or more predetermined patterns in the x-direction and the y-direction while the platform remains in a first position. The system may further include a pad conditioner.

[0010] Embodiments of the present disclosure may further include a polishing station configured for use during semiconductor manufacturing. The polishing station includes: a first polishing module, the first polishing module including: a system body including one or more walls defining a processing area; a first platform disposed within the processing area of ​​the system body; a second platform disposed within the processing area of ​​the system body; a carrier head within the processing area of ​​the system body; and an xy overhead assembly disposed above the first platform and the second platform and configured to actuate the carrier head in one or more predetermined patterns in the x-direction and the y-direction while both the first platform and the second platform remain in fixed positions relative to the system body. The system may further include one or more pad conditioners within the processing area of ​​the system body.

[0011] Embodiments of the present disclosure may further include a polishing station configured for use during semiconductor manufacturing. The polishing station includes: a system body including one or more walls defining a processing area; a first platform disposed within the processing area of ​​the system body; a second platform disposed within the processing area of ​​the system body; a central rail support disposed within the processing area of ​​the system body; a first head assembly disposed above one of the first platform or the second platform; and a second head assembly disposed above one of the first platform or the second platform. The first head assembly includes: a first carrier head; and a first support arm coupling the first carrier head to the central rail support. The second head assembly includes: a second carrier head; and a second support arm coupling the second carrier head to the central rail support. The first head assembly may further include a first rotation axis disposed on an inner end of the first support arm opposite the first carrier head, and the second head assembly may further include a second rotation axis disposed through an inner end of the second support arm opposite the second carrier head.

[0012] Embodiments of the present disclosure may further include a system comprising a computer, the computer being configured to perform specific operations or actions by means of software, firmware, hardware, or a combination thereof installed on the system, the operations or actions causing the system to perform actions when operated. One or more computer programs may be configured to perform specific operations or actions by means of including instructions that, when executed by a data processing device, cause the device to perform one or more of the actions described herein. Other embodiments of this aspect include corresponding computer systems, devices, and computer programs recorded on one or more computer storage devices, the computer systems, devices, and computer programs each being configured to perform the actions of one or more of the methods described herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order that the manner in which the above-described features of the present disclosure can be understood in detail, a more detailed description of the present disclosure, briefly summarized above, may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are therefore not to be construed as limiting the scope of the embodiments, and other equally effective embodiments may be admitted.

[0014] Figure 1 is a schematic plan view of a modular polishing system including one or more polishing stations according to one embodiment.

[0015] Figure 2A is a schematic side cross-sectional view of a polishing station according to one embodiment.

[0016] Figure 2B According to one embodiment Figure 2A A close-up side cross-sectional view of the polishing station is shown.

[0017] Figure 2C According to one embodiment Figure 2B Schematic top view of a partial cross-section of a polishing station.

[0018] Figure 3A is a schematic side cross-sectional view of another polishing station according to one embodiment.

[0019] Figure 3B According to one embodiment Figure 3A A close-up side cross-sectional view of the polishing station is shown.

[0020] Figure 3C According to one embodiment Figure 3B Schematic top view of a partial cross-section of a polishing station.

[0021] Figure 4A is a schematic side cross-sectional view of another polishing station according to one embodiment.

[0022] Figure 4B According to one embodiment Figure 4A A close-up side cross-sectional view of the polishing station is shown.

[0023] Figure 4C According to one embodiment Figure 4B Schematic top view of a partial cross-section of a polishing station.

[0024] Figure 5 is a schematic top partial cross-sectional view of yet another polishing station according to an embodiment.

[0025] Figure 6 is a schematic side cross-sectional view of a polishing station according to one embodiment.

[0026] Figure 7 is a schematic side cross-sectional view of another polishing station according to one embodiment.

[0027] Figure 8A is a schematic side cross-sectional view of a polishing station according to one embodiment.

[0028] Figure 8B According to one embodiment Figure 8A Schematic top view of a partial cross-section of a polishing station.

[0029] Figure 9A and Figure 9B is a schematic diagram of a multi-pad platform assembly according to one embodiment.

[0030] Figure 10 is a flow chart illustrating a method of utilizing a polishing pad according to embodiments described herein.

[0031] Wherever possible, to facilitate understanding, identical reference numerals have been used to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0032] Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems used in semiconductor device manufacturing. In particular, embodiments herein relate to modular polishing systems comprising vertically stacked polishing modules that provide increased system throughput density and improved reliability compared to conventional polishing systems.

[0033] In some embodiments, the throughput of a CMP system is increased, at least in part, by performing multiple CMP processing operations simultaneously while maximizing the throughput density of the CMP system and preventing a dramatic increase in system complexity due to an increase in the number of polishing pad assemblies used to process substrates. Embodiments of the present disclosure provided herein utilize a stationary platform and a polishing pad assembly to perform one or more polishing processes within each polishing module. During the polishing operation, the stationary platform and polishing pad assembly remain stationary. In some operations, a first pad is used to polish a substrate while a second pad is cleaned or conditioned. The second pad can be positioned adjacent to the first pad, such as on an opposite side of the platform. Between process operations, the first and second pads can be indexed simultaneously such that the positions of the first and second pads are switched.

[0034] In some embodiments described herein, a polishing station is configured to perform simultaneous polishing and ex-situ conditioning operations, wherein a first polishing pad is configured to polish a substrate while a second polishing pad is configured to be conditioned and cleaned in a cleaning area. Once polishing of the substrate is complete, a belt coupled to the first and second polishing pads is used to move the second polishing pad to a processing area to polish a different substrate or to continue polishing the same substrate, while simultaneously moving the first polishing pad to a cleaning area for conditioning and cleaning. In some embodiments, the first and second polishing pads are configured differently to facilitate a multi-stage process. In one example, during a first polishing stage, the substrate is pushed against the first polishing pad, the belt moves the second polishing pad to the processing area, and during a second polishing stage, the substrate is pushed against the second polishing pad. In some embodiments, the first and second polishing pads are formed to have one or more different material properties or physical characteristics from one another.

[0035] Generally speaking, polishing a substrate involves pushing the material surface of the substrate against a polishing pad in the presence of a polishing fluid. The material surface is pushed against the polishing pad by applying a downward pressure to the backside (inactive) surface of the substrate while simultaneously moving the substrate relative to the polishing pad. The downward pressure on the substrate and the relative motion between the substrate and the polishing pad are substantially provided by the movement of the substrate carrier assembly and the first actuator assembly relative to the polishing pad.

[0036] The substrate carrier assembly can include a carrier head and a pneumatic assembly fluidically coupled to the carrier head. The pneumatic assembly provides pressurized gas and / or vacuum to the carrier head for use in polishing and chucking (e.g., substrate holding) operations. In other embodiments, the carrier assembly includes one or more electromechanical actuators configured to perform some or all of the functions described with respect to the pneumatic assembly.

[0037] The first actuator assembly is configured to support the substrate carrier assembly above the upward-facing surface of the platform and to move the substrate carrier assembly in a direction parallel to the surface, thereby providing relative motion between a substrate disposed in the carrier head and a fixed polishing pad positioned below the substrate. In some embodiments, the first actuator assembly is disposed in a processing region between the platform assembly and the system body, above an upward-facing polishing pad (illustrated herein as the first polishing pad). The first actuator assembly is configured to move the substrate carrier assembly and the polishing fluid distribution system relative to a surface of the first polishing pad facing the processing region. The second actuator assembly is configured to move the pad conditioning assembly and the pad washing system relative to a surface of the second polishing pad facing the cleaning region.

[0038] Figure 1 is a schematic plan view of a modular polishing system 100 including one or more polishing stations 115. The polishing station 115 may be Figure 2A 、 Figure 2B and Figure 2C Polishing station 200, Figure 3A 、 Figure 3B and Figure 3C Polishing station 300, Figure 4A 、 Figure 4B and Figure 4C Polishing station 400, Figure 5 and Figure 6 Polishing station 600, Figure 5 and Figure 7 Polishing station 700 or Figure 8A and Figure 8B Any one of the polishing stations 800.

[0039] Here, the modular polishing system 100 is characterized by a first portion 120 and a second portion 105 coupled to the first portion 120. The second portion 105 includes one or more polishing stations 115, and the one or more polishing stations 115 include one or more polishing modules. The one or more polishing stations 115 include a structural support 111 for holding and supporting the polishing modules within the one or more polishing stations 115. Each of the one or more polishing stations 115 includes at least a transfer station 116 for placing one or more substrates 180 into the one or more polishing stations 115. Figures 2A-8B As described above, each of the one or more polishing stations 115 further includes one or more platforms adapted to receive one or more polishing pads thereon. A polishing head is also disposed within each of the polishing stations 115 for polishing the substrate.

[0040] Figure 2A is a schematic side view of the polishing station 200. The polishing station 200 includes a plurality of polishing modules 250a, 250b, 250c, and 250d. Figure 2B is a close-up side view of a polishing module of polishing station 200 . Figure 2C yes Figure 2B A schematic top view of a partial cross-sectional view of a polishing station is shown. In some embodiments, there is a first polishing module 250a, a second polishing module 250b, a third polishing module 250c, and a fourth polishing module 250d. Each of the first polishing module 250a, the second polishing module 250b, the third polishing module 250c, and the fourth polishing module 250d is similar and includes similar components for processing substrates. Multiple polishing modules 250a, 250b, 250c, and 250d can be stacked in a vertical direction, making the polishing station 200 significantly smaller in footprint than conventional CMP tools that include two or more polishing modules or polishing areas arranged on a single plane. The polishing station 200 also includes improved substrate throughput density.

[0041] Typically, the first section 120 includes one or more combinations of a plurality of system loading stations 122, one or more substrate handlers (e.g., a first robot 124 and a second robot 126), one or more metrology stations 128, one or more site-specific polishing (LSP) modules 130, and one or more post-CMP cleaning systems 132. The LSP modules 130 are generally configured to polish only a portion of a substrate surface using polishing members (not shown) having a surface area smaller than the surface area of ​​the substrate being polished. The LSP modules 130 are typically used to condition a relatively small portion of a substrate after polishing within the polishing module, such as by removing excess material. In some embodiments, one or more LSP modules 130 may be included within the second section 105 in place of, or coupled to, one of the polishing modules.

[0042] In other embodiments, one or more LSP modules 130 can be arranged in any other desired arrangement within the modular polishing system described herein. For example, one or more LSP modules 130 can be arranged between the first section 120 and the second section 105, between adjacent polishing modules in any arrangement described herein, and / or near the end of any second section described herein, with the respective second section end distal from the first solution. In some embodiments, the modular polishing system can include one or more buffing modules (not shown), which can be arranged in any of the arrangements described above for the LSP modules 130. In some embodiments, the first section 120 features at least two post-CMP cleaning systems 132, which can be positioned on opposite sides of the second robot 126.

[0043] The post-CMP cleaning system 132 facilitates the removal of residual polishing fluid and polishing byproducts from the substrate 180 and can include any one or a combination of a brush or spray box 134 and a drying unit 136. The first robot 124 and the second robot 126 are used in conjunction to transfer the substrate 180 between the second section 105 and the first section 120 (including between the various modules, stations, and systems of the second section 105 and the first section 120). For example, the second robot 126 is used to transfer the substrate 180 to and from the transfer station 116, one or more metrology stations, the LSP module 130, the brush or spray box 134, and the drying unit 136.

[0044] In the embodiments herein, the operation of the modular polishing system 100 is directed by a system controller 170. The system controller 170 includes a programmable central processing unit (CPU) 171 that can operate in conjunction with a memory 172 (e.g., non-volatile memory) and support circuits 173. The support circuits 173 are typically coupled to the CPU 171 and include cache memory, clock circuits, input / output subsystems, power supplies, and the like, and a combination of these components are coupled to the various components of the modular polishing system 100 to facilitate control thereof. The CPU 171 is one of any form of general-purpose computer processor (such as a programmable logic controller (PLC)) used in industrial environments to control the various components and subprocessors of a processing system. The memory 172 coupled to the CPU 171 is non-transitory and is typically one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0045] Typically, the memory 172 is in the form of a non-transitory computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by the CPU 171, facilitate the operation of the modular polishing system 100. The instructions in the memory 172 are in the form of a program product, such as a program that implements the methods of the present disclosure. The program code can conform to any of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) of the program product define the functionality of the embodiments (including the methods described herein).

[0046] Illustrative non-transitory computer-readable storage media include, but are not limited to: (i) non-writable storage media on which information can be permanently stored (e.g., a read-only memory device within a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory device, such as a solid-state hard drive (SSD)); and (ii) writable storage media on which information can be modified (e.g., a floppy disk within a floppy disk drive, a hard drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, the methods described herein, or portions thereof, are performed by one or more application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the substrate processing and / or handling methods described herein are performed by a combination of software routines, (multiple) ASICs, FPGAs, and / or other types of hardware implementations. One or more system controllers 170 can be used with one or any combination of the various modular polishing systems described herein and / or with individual polishing modules within the modular polishing systems. Polishing module

[0047] Each of the polishing modules 250a, 250b, 250c, and 250d includes a system body 202, a first platen 238a disposed within the system body 202, a second platen 238b disposed within the system body 202, a carrier head assembly 210, an xy elevated assembly 204 disposed above the first platen 238a and the second platen 238b within the system body 202, a liquid delivery unit 212, and one or more pad conditioners 214. An enclosed area within the system body 202 includes a process volume 226 defined by a plurality of interior walls 202A-202F of the system body 202. The inner walls 202A-202F include an upper inner wall 202A, a lower inner wall 202B opposite the upper inner wall 202A, a first inner wall 202C disposed between the upper inner wall 202A and the lower inner wall 202B, a second inner wall 202D opposite the first inner wall 202C, a third inner wall 202E, and a fourth inner wall 202F. The upper inner wall 202A may also be referred to as a top wall of the system body 202. Each of the first platform 238a, the second platform 238b, the carrier head assembly 210, the xy elevated assembly 204, the liquid delivery unit 212, and the one or more pad conditioners 214 is disposed within the process volume 226.

[0048] The liquid delivery unit 212 may be a slurry delivery module and is configured to deliver slurry and / or one or more treatment fluids (e.g., Figure 2B One or more liquids 234) are supplied to the top surface of pads 236a, 236b disposed on platforms 238a, 238b. In some embodiments, pads 236a, 236b are polishing pads, such as substrate polishing pads or semiconductor substrate polishing pads. Figures 2A-2C In some embodiments, each of the liquid delivery unit 212, the carrier head assembly 210, and the pad adjuster 214 is coupled to the xy elevated assembly 204 such that the xy elevated assembly 204 is configured to enable each of the carrier head assembly 210, the pad adjuster 214, and the liquid delivery unit 212 to move in both the x-direction and the y-direction. In some embodiments, movement of the carrier head assembly 210, the pad adjuster 214, or the liquid delivery unit 212 in both the x-direction and the y-direction is generated using one or more actuators (e.g., pneumatic or electromechanical actuators) configured to provide the desired motion of these components. Thus, various actuators within the xy elevated assembly 204 and components within the system controller 170 enable movement of the liquid delivery unit 212, the carrier head assembly 210, and the pad adjuster 214 relative to the first platform 238a, the second platform 238b, and each of the first pad 236a and the second pad 236b disposed on the first platform 238a and the second platform 238b.

[0049] like Figure 2B As shown, the xy overhead assembly 204 is configured to actuate each of the carrier head assembly 210, the pad conditioner 214, and the liquid delivery unit 212 in the x-direction and the y-direction. The xy overhead assembly 204 includes one or more crossbeams 228, 230 and a plurality of runway beams 224. In some embodiments, the crossbeams 228, 230 are referred to as bridges or bridge rails, such that the crossbeams 228, 230 form a bridge between two runway beams 224. The crossbeams 228, 230 are disposed on top of or inserted into the runway beams 224 such that the crossbeams 228, 230 are supported by the runway beams 224. In the embodiments described herein, there are two crossbeams 228, 230, such as a first crossbeam 228 and a second crossbeam 230.

[0050] A first cross-beam 228 is coupled to one or both of the liquid delivery unit 212 and the carrier head assembly 210 and is configured to support and actuate one or both of the liquid delivery unit 212 and the carrier head assembly 210. A second cross-beam 228 is coupled to the pad adjuster 214 and is configured to support and actuate the pad adjuster 214. In some embodiments, the first cross-beam 228 supports the carrier head assembly 210, the pad adjuster 214, and the liquid delivery unit 212. In other embodiments, each of the carrier head assembly 210, the pad adjuster 214, and the liquid delivery unit 212 is disposed on a separate cross-beam 228, 230 or multiple sets of cross-beams 228, 230, such that there are three cross-beams 228, 230. In embodiments where each of the carrier head assembly 210, pad conditioner 214, and liquid delivery unit 212 is disposed on separate beams 228, 230, there may be three or more beams 228, 230. Each of the beams 228, 230 may represent a set of adjacent beams 228, 230 that are parallel and configured to hold a trolley that is actuated along the beams 228, 230. At least one end of the beams 228, 230 may have a drive and / or actuator coupled thereto. Figures 2A-2B As shown, the drives or actuators are configured to move the beams 228 , 230 in a first direction (eg, +x and −x directions) along the runway beam 224 .

[0051] The carrier head assembly 210 is coupled to one of the crossbars 228, 230 of the xy overhead assembly 204. The carrier head assembly 210 includes a carrier head trolley frame 240 that couples a carrier head 244 to the xy overhead assembly 204. Figures 2A-2B As shown, the carrier head 244 is positioned in the xy plane above the carrier loading station 268 ( Figure 2C ).exist Figure 2C 2, carrier head 244 is positioned in the xy plane above polishing pad 236a. Carrier head assembly 210 is generally referred to herein as a polishing head assembly, and carrier head 244 is generally referred to herein as a polishing head. Carrier head trolley frame 240 is configured to support carrier head 244 and actuate carrier head 244 in a second direction (e.g., +y and -y directions) along crossbeam 228. Vertical actuator 242 is disposed between carrier head 244 and carrier head trolley frame 240 such that vertical actuator 242 is configured to move carrier head 244 in a third direction (e.g., +z and -z directions) relative to carrier head trolley frame 240 and xy overhead assembly 204.

[0052] The vertical actuator 242 can be a hydraulic actuator and can be coupled to one or more pneumatic components, such as the electrical or pneumatic components 216. Slides or guides within the vertical actuator 242 are used to slidably couple a carrier head 244 to the trolley frame 240. The carrier head 244 is configured to hold one or more substrates during the polishing process. The carrier head 244 can lift a substrate from a support surface, such as one of the pads 236a, 236b, within the system body 202. The carrier head 244 is also configured to apply back pressure to the substrate to push it against the pads 236a, 236b. As briefly discussed above, the carrier head 244 includes a retaining ring that surrounds the substrate during polishing, and one or more flexible components, such as a bladder, diaphragm, or membrane (not shown), which, together with other components of the carrier head 244, can define a chamber disposed therein. The flexible components of the carrier head 244 and the chamber defined thereby can be used for both substrate polishing and substrate loading and unloading operations. Negative and positive pressures are provided to the chamber using gas supplied from the pneumatic assembly to allow substrate loading and polishing operations, respectively. For example, a chamber defined by one or more flexible components can be pressurized to push a substrate disposed in the carrier head toward the polishing pad by pressing components of the carrier head against the back of the substrate. When polishing is complete, or during a substrate loading operation, the substrate can be vacuumed to the carrier head 244 by applying a vacuum to the same or a different chamber to deflect the film layer in contact with the back of the substrate upward. The upward deflection of the film layer will create a low pressure pocket between the film and the substrate, thereby vacuuming the substrate to the carrier head 244. Before the substrate is unloaded from the carrier head 244 to the carrier loading station 268 ( Figure 2C ) during a substrate unloading operation in the polishing pad. The pressurized gas in the chamber deflects the diaphragm downward to release the substrate from the carrier head 244 into the carrier loading station 268. In some embodiments, the carrier head 244 is described as a carrier head. Material is removed from the pad-facing surface of the substrate by a combination of chemical and mechanical action provided by the polishing fluid, downward pressure on the substrate, and relative motion between the substrate and the polishing pad.

[0053] The liquid delivery unit 212 is coupled to one of the cross beams 228, 230 of the xy overhead assembly 204. The liquid delivery unit 212 includes a liquid delivery trolley frame that couples a liquid delivery member 232 to the xy overhead assembly 204. The liquid delivery trolley frame is configured to support the liquid delivery member 232 and move and position the liquid delivery member 232 along portions of the cross beam 228 that are disposed at points along the +x direction and the -x direction. The liquid delivery unit 212 supplies one or more liquids 234 or fluids to be dispensed onto one of the pads 236a, 236b. The liquid delivery unit 212 can be coupled to one or more fluid sources, such as a liquid delivery module 218. The liquid delivery member 232 is configured to supply one or both of a polishing fluid, a cleaning fluid, and / or water. The liquid 234 provided from the liquid delivery unit 212 provides the fluid at a desired flow rate and pressure. The polishing fluid source can provide one or more fluids, including chemical solutions (e.g., acids, bases, inhibitors, etc.) and / or slurry solutions (e.g., abrasive particles (e.g., silica, ceria, or alumina-based abrasives)) containing solutions for substrate polishing. The water that can be utilized within the liquid delivery unit 212 is a deionized water source. The liquid delivery unit 212 can include one or more pumps (one for each fluid) for delivering the fluid to one of the pads 236a, 236b at a desired flow rate and pressure.

[0054] The liquid 234 provided by the liquid delivery unit 212 is dispensed onto one of the first pad 236a or the second pad 236b. The liquid 234 is delivered to the first pad 236a or the second pad 236b as a spray, so that the spray is emitted onto the first pad 236a or the second pad 236b by the nozzle of the liquid delivery member 232. The spray is a continuous stream of liquid, such as a chemical solution, a slurry-containing solution, or water.

[0055] The pad adjuster 214 is coupled to one of the crossbars 228, 230 of the xy overhead assembly 204. Figure 2AIn an embodiment of the present invention, the pad adjuster 214 is coupled to the crossbeam 230, which is positioned below the crossbeam 228. The pad adjuster 214 includes an adjuster trolley frame 246 that couples an adjustment disk 252 to the xy overhead assembly 204. The adjuster trolley frame 246 is configured to support the adjustment disk 252 and actuate the adjustment disk 252 such that the adjustment disk 252 translates along the crossbeam 230 in the +y direction and the -y direction. A vertical actuator 248 is disposed between the adjustment disk 252 and the adjuster trolley frame 246 such that the vertical actuator 248 is configured to move the adjustment disk 252 in the +z direction and the -z direction relative to the adjuster trolley frame 246 and the xy overhead assembly 204. The vertical actuator 248 can be a hydraulic actuator and can be coupled to one or more motion assemblies (which can include electrical or pneumatic components 216). A slide or guide within the vertical actuator 248 is used to slidably couple a conditioning disk 252 to the conditioner trolley frame 246. The conditioning disk 252 is used to abrade and / or recondition the pads 236a, 236b during the pad conditioning process by pushing an abrasive pad conditioning disk (e.g., a diamond-impregnated disk) against the pads 236a, 236b to remove a portion of the polishing pad surface. Pad conditioning operations can be performed between polishing substrates (i.e., ex-situ conditioning), in parallel with the polishing substrates (i.e., in-situ conditioning), or both. In some embodiments, the conditioning disk 252 includes a mounting plate to which the conditioning disk is mounted.

[0056] In some embodiments, as Figures 2A-2C As shown, the carrier head 244 is not configured to rotate about a central axis extending through the center of the retaining ring, the flexible element, and the substrate secured therein, nor is the conditioning disk 252 configured to rotate about a central axis extending through the pad conditioning disk 252. Instead, the xy overhead assembly 204 is configured to move each of the carrier head 244 and conditioning disk 252 in a desired pattern along the top surface of the first pad 236a and the second pad 236b. In this configuration, the carrier head 244 portion and the platform 238 of the polishing module 250 are significantly simplified and of significantly lower cost compared to conventional CMP polishing hardware designs that require portions of the carrier head, the polishing pad, and the conditioning disk to be rotated and translated simultaneously relative to one another. Those skilled in the art will appreciate that the hardware configuration disclosed herein for performing polishing processes (discussed further below) significantly reduces manufacturing and maintenance costs and improves reliability because the need for actuators and coupling assemblies to enable rotation and / or translation of these components while maintaining alignment of these components with the pad surface during processing is eliminated or absent. The liquid delivery unit 212 is configured to lead or follow the carrier head 244 during a polishing operation to deliver liquid to the first pad 236 a and the second pad 236 b .

[0057] like Figures 2A-2CAs shown, a first platform 238a is disposed on a first side of the polishing volume 226 within the system body 202. A basin (not shown) may be disposed around the first platform 238a to catch any slurry, water, or other fluid that drips from the pad disposed on the first platform 238a. The first platform 238a is formed of a metal material and may include multiple sublayers for supporting pads, such as the first pad 236a. As described above, the first platform 238a is a fixed platform and is not configured to rotate or translate, thereby significantly simplifying this area of ​​the polishing module 250 compared to conventional CMP hardware designs. A second platform 238b is disposed on a second side of the polishing volume 226 within the system body 202. A basin (not shown) may be disposed around the second platform 238b to catch any slurry, water, or other fluid that drips from the pad disposed on the second platform 238b. The second platform 238b is similar to the first platform 238a, but is configured to support a second pad 236b and, in some embodiments, simultaneously process a second substrate on the second pad 236b.

[0058] Each of the first platform 238a and the second platform 238b is flanked by auxiliary supports 220 and 222. The auxiliary supports include a first auxiliary support 220 and a second auxiliary support 222. In some embodiments, the auxiliary supports 220, 222 are each configured to support one or more additional arms or devices. In some embodiments, the auxiliary supports 220, 222 are configured to support one or more slurry arms, one or more regulator arms, or one or more sensors (e.g., cameras, pH sensors, etc.). Each of the auxiliary supports 220, 222 includes one or more guide rails and actuators that are disposed in the + / - x direction along the length of the platforms 238a, 238b.

[0059] The electrical and pneumatic component assembly 216 is positioned at and / or coupled to an outer sidewall of the system body 202. In some embodiments, each of the polishing modules 250a, 250b, 250c, 250d includes electrical and pneumatic components that are each disposed in a different area of ​​the electrical and pneumatic component assembly 216. In some embodiments, each of the polishing modules 250a, 250b, 250c, 250d shares the electrical and pneumatic component assembly 216. Although shown as being attached to the sides of the polishing modules 250a, 250b, 250c, 250d, the electrical and pneumatic component assembly 216 may also be coupled to the top or bottom of one of the polishing modules 250a, 250b, 250c, 250d.

[0060] The electrical and pneumatic components assembly 216 includes components that facilitate the actuation and / or delivery of fluids during the portion of the polishing process performed in the various polishing modules 250a, 250b, 250c, and 250d. In some embodiments, the electrical and pneumatic components assembly 216 includes one or more sub-controllers, one or more power supplies, pneumatic pressure reservoirs, a vacuum pump, an air pump, a pneumatic valve, a pressure regulator, a shut-off valve, or one or more gas sources. Each of the components within the system body 202 can be coupled to a sub-controller disposed within the electrical and pneumatic components assembly 216 to allow for the distribution and control of power and / or pressure applied to the component.

[0061] The liquid delivery module 218 is similarly positioned at and / or coupled to the outer sidewall of the system body 202. In some embodiments, each of the polishing modules 250a, 250b, 250c, 250d includes a separate liquid delivery module 218. In other embodiments, each of the polishing modules 250a, 250b, 250c, 250d shares one or two liquid delivery modules 218. Although shown as being attached to the sides of the polishing modules 250a, 250b, 250c, 250d, the liquid delivery module 218 can also be coupled to the top or bottom of one of the polishing modules 250a, 250b, 250c, 250d. The liquid delivery module 218 is configured to supply and control the delivery of one or more liquids to the components within the process volume 226. Thus, the liquid delivery module 218 is configured to deliver one or a combination of chemical solutions (e.g., acids, bases, inhibitors, etc.), slurry solutions for substrate polishing (e.g., solutions containing abrasive particles (e.g., silica, ceria, or alumina-based abrasives)), or water (e.g., deionized water).

[0062] In addition to the discussion provided above, each of the polishing modules 250a, 250b, 250c, 250d further includes a center support 208 extending from the bottom surface 202C of the system body 202. The center support 208 is configured to support one or all of a first headwash assembly 266, a second headwash assembly 266b, and a carrier loading station 268 ( Figure 2C The central support 208 is disposed between the first platform 238a and the second platform 238b.

[0063] The carrier loading station 268 is positioned at the distal end of the center support 208 and adjacent to the end sidewall 202E of the system body 202. The carrier loading station 268 is configured to receive and hold a substrate as it is moved by the second robot 126 into the process volume 226 of the system body 202 and placed into the carrier loading station 268. In some embodiments, the carrier loading station 268 is referred to as a loading hood. The substrate is then transferred from the carrier loading station 268 to one or more of the first pad 236a or the second pad 236b on the platforms 238a, 238b using one or more robots (not shown) or using the carrier head assembly 210.

[0064] A first wash head assembly 266a and a second wash head assembly 266b are coupled to the end of the center support 208 opposite the carrier loading station 268. In some embodiments, only one wash head station is present in each module. The first wash head assembly 266a and the second wash head assembly 266b are configured to enable washing of the carrier head assembly 210 and the pad conditioner 214 between polishing processes performed on substrates. In some embodiments, the positions of the carrier loading station 268 and the wash head assembly 266a, 266b are switched.

[0065] During the polishing process, the carrier head assembly 210 is actuated in a predetermined pattern 260 so that a substrate disposed within the carrier head assembly 210 moves along a path created by the actuation pattern. The predetermined pattern 260 can form a double twisted path, such as a figure-eight path. The predetermined pattern 260 can also form a zigzag or oval path. Other shapes of predetermined patterns 260 are also contemplated. The predetermined pattern 260 is configured to ensure uniform material removal across the entire substrate surface. To form the predetermined pattern 260, the carrier head assembly 210, the pad conditioner 214, and the liquid delivery unit 212 move at least along each of the beams 228 and 230 in a first direction 276. Each of the beams 228 and 230 can also simultaneously move along the racetrack beam 224 in a second direction 272. The illustrated predetermined pattern 260 is a path formed by the central axis of the substrate when the substrate is actuated on the pads 236a and 236b. In some embodiments, a separate robot from the carrier head assembly 210 is used to place the substrate on one of the pads 236a, 236b. The substrate can be placed along the predetermined pattern 260 at a placement location 262. One of the carrier head assemblies 210 can then be actuated to the placement location 262 to secure the substrate beneath the carrier head assembly 210. The placement location 262 can be anywhere on the pads 236a, 236b. In some embodiments, after the substrate is placed at the placement location 262, one or both of the pads 236a, 236b are actuated relative to the platform 238 and the sidewalls 202C, 202D, 202E, 202F to move the substrate beneath one of the carrier head assemblies 210.

[0066] The platforms 238a and 238b have a rectangular shape in plan view, such that the top surface of each of the platforms 238a and 238b on which the pad is disposed is rectangular. In some embodiments, the corners of the rectangle may be chamfered or rounded. In some embodiments, the top surface of the platforms 238a and 238b is oval in shape. In some embodiments, each of the platforms 238a and 238b has a first length L1 and a first width W1. The first length L1 is the length of one of the platforms 238a and 238b in the x-direction. The first width W1 is the width of one of the platforms 238a and 238b in the y-direction. In some embodiments, the first length L1 is greater than the first width W1, such as approximately 1.5 times greater, such as approximately 2 times greater, such as approximately 2.5 times greater, such as approximately 3 times greater. Thus, the aspect ratio of the first length L1 to the first width W1 of either of the lands 238a, 238b is greater than about 1.5: 1, such as greater than about 2: 1, such as greater than about 2.5: 1, such as greater than about 3: 1. The increased first length L1 relative to the first width W1 improves the ability to produce various polishing patterns, such as a dyad pattern.

[0067] In one embodiment, during a polishing process, the carrier head assembly 210 is actuated in a predetermined pattern 260 over a first portion of the pad 236a, while the pad conditioning disk 252 of the conditioner trolley frame 246 is configured to perform a pad conditioning process on a second portion of the pad 236a. After polishing of the substrate within the first portion of the pad 236a is completed, the conditioned second portion of the pad 236a is indexed to the location where the first portion of the pad 236a was previously positioned, allowing another polishing process to be performed on the second portion of the pad 236a using the carrier head assembly 210 positioned over the second portion of the pad 236a. In one example, the first and second portions are equal portions of the pad 236a, such as each portion occupying approximately 50% of the surface area of ​​the pad 236a. In one embodiment, the first and second portions are positioned continuously along a first length L1 in the pad direction (i.e., the X direction). Alternatively, where the pad can be indexed or repositioned in a transverse direction (i.e., the Y direction), in another embodiment, the first and second portions are positioned continuously along a first width W1.

[0068] Each of the polishing modules 250a, 250b, 250c, and 250d has a module height 205, a module width 207, and a module length 274. The module height 205 is the height of one of the polishing modules 250a, 250b, 250c, and 250d in the z-direction, which is orthogonal to the x- and y-directions. The module width 207 is the width of one of the polishing modules 250a, 250b, 250c, and 250d in the y-direction, which is orthogonal to the x- and z-directions. The module length 274 is the length of one of the polishing modules 250a, 250b, 250c, and 250d. The module height 205 is less than approximately 2000 mm, such as less than approximately 1500 mm, such as less than approximately 1250 mm, such as less than approximately 1000 mm, such as less than approximately 750 mm, and such as less than approximately 600 mm. The module width 207 is less than about 2500 mm, such as less than about 2250 mm, such as less than about 2000 mm, such as less than about 1800 mm. The module length 274 is about 1000 mm to about 2500 mm, such as about 1000 mm to about 2000 mm, such as about 1000 mm to about 1500 mm, such as about 1000 mm to about 1250 mm.

[0069] The dimensions of each of the polishing modules 250a, 250b, 250c, 250d enable each of the polishing modules 250a, 250b, 250c, 250d to be smaller than a conventional chemical mechanical polishing assembly. The module height 205, module width 207, and module length 274 further enable the polishing modules 250a, 250b, 250c, 250d to be stackable. By not rotating the carrier head assembly 210 or the platforms 238a, 238b, the amount of rotating equipment within the polishing modules 250a, 250b, 250c, 250d is reduced. Because rotating equipment is typically bulky, removing the rotating equipment allows for a smaller size of the polishing modules 250a, 250b, 250c, 250d.

[0070] Figure 3A FIG2 is a schematic side cross-sectional view of another polishing station 300. The polishing station 300 includes a plurality of polishing modules 350a, 350b, 350c, and 350d. In some embodiments of the polishing station, there is a first polishing module 350a, a second polishing module 350b, a third polishing module 350c, and a fourth polishing module 350d. Each of the first polishing module 350a, the second polishing module 350b, the third polishing module 350c, and the fourth polishing module 350d is similar and includes similar components for processing substrates. The plurality of polishing modules 350a, 350b, 350c, and 350d can be stacked vertically, resulting in a smaller footprint for the polishing station 300 and improved substrate throughput density.

[0071] Each of the polishing modules 350a, 350b, 350c, 350d is connected to Figures 2A-2C The polishing modules 250a, 250b, 250c, 250d are similar, but the liquid delivery unit 212 is replaced by a plurality of liquid delivery arms 302, and the one or more pad conditioners 214 are replaced by a plurality of pad conditioner arms 310. The second crossbar may also be optional, and there may be a second carrier head assembly 360 ( Figure 3C ) to allow substrates to be processed simultaneously in one or more pads in each of the polishing modules. The second carrier head assembly 360 is similar to the first carrier head assembly 210 and may be referred to as a polishing head assembly.

[0072] like Figure 3B As shown, one or more liquid delivery arms 302 are configured to actuate over each of the platforms 238a, 238b and the corresponding pads 236a, 236b. The one or more liquid delivery arms 302 are coupled to each of the second auxiliary supports 222 disposed along one side of each platform 238a, 238b. The one or more liquid delivery arms 302 can be configured to travel along the length of the second auxiliary supports 222, or can be fixed.

[0073] In embodiments where the pad adjuster arm 310 is configured to be positioned along the second auxiliary bracket 222, the adjuster arm base 312 includes an actuator, a motor, or is coupled to a rail that can move along the length of the second auxiliary bracket 222. The adjuster arm base 312 is further configured to rotate the pad adjuster arm 310 about an adjuster arm base axis (e.g., a vertical axis), which enables the adjuster head 314 to pivot about the adjuster arm base axis. The pad adjuster arm 310 further includes the adjuster head 314 with a mounting plate 316 and an adjustment disk 318. The adjuster head 314 is similar to the pad adjuster 214.

[0074] Conditioner head 314 is coupled to conditioner arm base 312 using connecting arm 310. Connecting arm 310 is an arm that supports conditioner head 314 and pivots via components within conditioner arm base 312. Mounting plate 316 is coupled to the bottom of conditioner head 314 and is configured to support conditioning disk 318 when conditioning disk 318 is actuated against one of pads 236a, 236b on one of platforms 238a, 238b. Conditioning disk 318 is used to clean and / or restore pads 236a, 236b by sweeping polishing byproducts from pads 236a, 236b (such as with a brush (not shown)) and / or abrading pad conditioning disks (e.g., diamond-impregnated disks) against pads 236a, 236b. Pad conditioning operations may be performed between polishing substrates (ie, ex-situ conditioning), in parallel with polishing substrates (ie, in-situ conditioning), or both.

[0075] One or more liquid delivery arms 302 are also configured to actuate above each of the platforms 238a, 238b and the corresponding pads 236a, 236b. One or more liquid delivery arms 302 are coupled to each first auxiliary support 220 provided along one side of the platforms 238a, 238b. One or more liquid delivery arms 302 can be configured to travel along the length of the first auxiliary support 220, or can be fixed. In an embodiment in which the liquid delivery arm 302 is configured to move along the first auxiliary support 220, the delivery arm base 304 includes an actuator, a motor, or is coupled to a guide rail that moves along the length of the first auxiliary support 220. The delivery arm base 304 is further configured to rotate the liquid delivery arm 302 around a delivery base axis (e.g., a vertical axis), which enables the liquid delivery arm 302 to pivot around the delivery base axis. The delivery arm 302 further includes a delivery head 306. Delivery head 306 extends above one of platforms 238 , 238 b and includes at least one nozzle for delivering a liquid, such as liquid 308 , to pads 236 a , 236 b .

[0076] The liquid delivery arm 302 is coupled to one or more fluid sources (such as a fluid source coupled to or disposed within the liquid delivery module 218). In some embodiments, the liquid delivery arm 302 is configured to supply one or both of a polishing fluid (e.g., a slurry-containing fluid) and water. Liquid 308 is provided from the liquid delivery arm 302 to the surface of the polishing pad at a desired flow rate and pressure. The liquid delivery arm 302 can provide one or more fluids, comprising chemical solutions (e.g., acids, bases, inhibitors, etc.) for substrate polishing and / or slurry-containing solutions (e.g., solutions containing abrasive particles (e.g., silica, ceria, or alumina-based abrasives)). The water that can be utilized within the liquid delivery arm 302 is a deionized water source. The liquid delivery arm 302 can include one or more pumps (one pump for each fluid) for delivering the fluid to the surface of the polishing pad.

[0077] Liquid 308 provided by liquid delivery arm 302 is dispensed onto one of first pad 236a or second pad 236b. Liquid 308 is delivered to first pad 236a or second pad 236b as a spray, such that the spray is emitted onto first pad 236a or second pad 236b by a nozzle of delivery head 306. The spray can be a continuous stream of liquid, such as a chemical solution, a slurry-containing solution, or water.

[0078] Figure 3C yes Figure 3B Schematic top view of a partial cross-sectional plan view of the polishing station. Figure 3CAs shown, each of the liquid delivery arm 302 and the pad conditioner arm 310 is actuated along the first auxiliary support 220 and the second auxiliary support 222, respectively. In some embodiments, the pad conditioner arm 310 is configured to perform a pad conditioning process before and / or after polishing a substrate on the pad 236a. Thus, the liquid delivery arm 302 is actuated in direction 352 along the length of the first auxiliary support 220, while the pad conditioner arm 310 is actuated in direction 354 (e.g., the +x direction and the -x direction) along the length of the second auxiliary support 222.

[0079] Figure 4A is a schematic side cross-sectional view of another polishing station 400. The polishing station 400 includes a plurality of polishing modules 450a, 450b, 450c. In some embodiments, there is a first polishing module 450a, a second polishing module 450b, and a third polishing module 450c. Each of the first polishing module 450a, the second polishing module 450b, and the third polishing module 450c is similar and includes similar components for processing substrates. The plurality of polishing modules 450a, 450b, 450c can be stacked vertically so that the polishing station 400 has a smaller footprint and has improved substrate throughput density. One or more support modules 475 can be disposed below or above the stack of polishing modules 450a, 450b, 450c. In some embodiments, the support module 475 is disposed on one side of the polishing modules 450a, 450b, 450c, similar to Figures 2A-2C electrical or pneumatic component assembly 216 or liquid delivery module 218.

[0080] like Figure 4B As shown, each of the polishing modules 450a, 450b, 450c, and 450d includes a system body 202, an xy overhead assembly 204, a carrier head assembly 210, a liquid delivery unit 212, one or more pad conditioners 214, a platform 404, a plurality of pads 406a and 406b disposed on the platform 404, and a pad washing station 410. Each of the system body 202, the xy overhead assembly 204, the carrier head assembly 210, the liquid delivery unit 212, and the one or more pad conditioners 214 is connected to the system body 202. Figures 2A-2C4. However, in one configuration, the platform 404 is a double-sided platform and is configured to support the first pad 408a on a first side and the second pad 408b on a second side. The pad washing station 410 is disposed on a side of the platform 404 opposite to the xy overhead assembly 204, the carrier head assembly 210, and the liquid delivery unit 212. The liquid delivery unit 212 can also be mechanically coupled to the carrier head assembly 210 using a liquid delivery arm 466. The liquid delivery arm 466 can enable the liquid delivery unit 212 to remain at a constant distance and position relative to the carrier head assembly 210 during movement of the carrier head assembly 210. The liquid delivery arm 466 enables the liquid delivery unit 212 to be separated from the xy overhead assembly 204 and can reduce the complexity of the xy overhead assembly 204.

[0081] A mat conveyor system 408 is provided on the platform 404. The platform 404 and the mat conveyor system 408 are part of a multi-mat platform assembly 405. The multi-mat platform assembly 405 may be similar to Figure 9A and Figure 9B The multi-pad platform assembly 900 is configured such that the multi-pad platform assembly 900 is interchangeable with the multi-pad platform assembly 405. The pad conveyor system 408 includes a flexible belt having a first pad coupling region 408a and a second pad coupling region 408b. The belt can be configured as a conveyor belt and configured to move the first pad 406a and the second pad 406b between a processing position and a cleaning position. The belt can be similar to Figure 9A and Figure 9B Belt 908. When positioned in the processing position, the first pad 406a or the second pad 406b is positioned to face the carrier head assembly 210 and the xy overhead assembly 204 and is configured to be used as a polishing pad or a buffing pad. When positioned in the cleaning position, the first pad 406a or the second pad 406b is positioned to face the pad washing station 410 and is configured to be cleaned or washed simultaneously with processing of a substrate on the pad in the processing position disposed on the opposite side of the platform 404. The pad conveyor system 408 may further include a first roller and a second roller, similar to Figure 9B The first roller 904a and the second roller 904b are spaced apart from each other and are respectively disposed on opposite ends of the platform 404 and the mat conveyor system 408 and aligned along the ±x direction. The platform 404 may be similar to Figure 9A and Figure 9BThe platform 905 of the multi-pad platform assembly 900 is shown. The dimensions of the first and second rollers and the belts forming the mat conveyor system 408 control the radius of curvature that the pads 406a, 406b are configured to withstand. One or more belt drives 402 are coupled to the mat conveyor system 408 and are configured to actuate the mat conveyor system 408 between process operations. In some embodiments, the platform 404 is formed of a metal material and may include one or more sub-layers (e.g., a coating or a removable plate) to support the pads 406a, 406b to further minimize wear and allow the belts to move relative to the platform.

[0082] By rotating each of the first and second rollers, pads 406a, 406b are indexed between a processing position and a cleaning position. Rotating the first and second rollers subsequently indexes the belt, which is disposed around and in contact with the first and second rollers. Pads 406a, 406b are coupled to the belt, thereby moving with it from one side of platform 404 to the opposite side of platform 404. The belt can also contact platform 404 on both sides, placing it in tension and in contact with each of the first and second rollers and platform 404. Pad conveyor system 408 is used to move pads 406a, 406b from side to side, enabling one pad 406a, 406b to be cleaned while the other is being used for substrate processing. Pad conveyor system 408 is also compact, enabling the size of polishing modules 450a, 450b, 450c, and 450d to be reduced. The position of the platform 404 within the mat conveyor system 408 enables efficient indexing of the mats 406a, 406b while enabling pressure to be applied to the mats 406a, 406b during processing.

[0083] The pad washing station 410 includes two wash runway beams 410 coupled to the interior sidewalls 202C and 202D of the system body 202. The pad washing station 410 further includes a wash runway beam 414 disposed between the two wash runway beams 410. The wash runway beam 414 includes a plurality of nozzles 420 disposed on the wash runway beam 414, the plurality of nozzles 420 being oriented toward the bottom side of the platform 404. The plurality of nozzles 420 are configured to distribute a cleaning fluid 416 (such as water) to the pads disposed on the bottom side of the platform 404, such as to the second pad 406b when the second pad 406b is disposed in the cleaning position. Each of the nozzles 420 is coupled to a fluid source (such as a fluid source coupled to or disposed within a liquid delivery module). The wash runway beam 414 is similar to one of the beams 228, 230 of the xy overhead assembly 204 in that the wash runway beam 414 is configured to actuate along the length of the wash runway beam 410.

[0084] Return Reference Figure 4A The support module 475 includes one or more liquid delivery modules 456, 458, 460, and one or more electrical or pneumatic components 462, 464. The liquid delivery modules 456, 458 and 460 are connected to the liquid delivery modules 456, 458 and 460. Figures 2A-2C 、 Figures 3A-3C The one or more electrical or pneumatic components 462, 464 are similar to the liquid delivery module 218. Figures 2A-2C 、 Figures 3A-3C Electrical or pneumatic component assembly 216.

[0085] Figure 4C yes Figure 4B Each of the polishing modules 450a, 450b, and 450c further includes a carrier loading station 268 located at a distal end of the platform 404. Figures 2A-2C As discussed, the carrier head assembly 210 is actuated along the predetermined pattern 260 over the first pad 406a and / or the second pad 406b.

[0086] Platform 404 has a rectangular shape in plan view, such that the top surface of platform 404, with the pad disposed thereon, is rectangular. In some embodiments, the corners of the rectangle may be chamfered or rounded. The rectangular platform is configured to receive a polishing pad having a non-axisymmetric polishing surface, such as a polishing pad that is not circular or rounded. In one example, the non-axisymmetric polishing pad has a rectangular shape that is flush with or surrounds the edge of platform 404. In some embodiments, the top surface of platform 404 is oval in shape. In some embodiments, platform 404 has a second length L2 and a second width W2. Second length L2 is the length of platform 404 in the x-direction. Second width W2 is the width of platform 404 in the y-direction. Second length L2 is greater than second width W2, such as approximately 1.5 times greater, such as approximately 2 times greater, such as approximately 2.5 times greater, such as approximately 3 times greater. Thus, the aspect ratio of second length L2 to second width W2 of platform 404 is greater than approximately 1.5:1, such as greater than approximately 2:1, such as greater than approximately 2.5:1, such as greater than approximately 3:1. The increased second length L2 relative to the second width W2 improves the ability to produce various polishing patterns, such as a dyad pattern. In some embodiments, the pad conditioner 214 is configured to perform a pad conditioning process before and / or after polishing a substrate on the pad 236a.

[0087] Each of the polishing modules 450a, 450b, 450c has a module height 452, a module width 454, and a module length 474. The module height 452 is the height of one of the polishing modules 450a, 450b, 450c in the z-direction, which is orthogonal to the x-direction and the y-direction. The module width 454 is the width of one of the polishing modules 450a, 450b, 450c in the y-direction, which is orthogonal to the x-direction and the z-direction. The module length 474 is the length of one of the polishing modules 450a, 450b, 450c. The module height 452 is less than approximately 2000 mm, such as less than approximately 1500 mm, such as less than approximately 1250 mm, such as less than approximately 1000 mm. The module width 454 is less than approximately 3000 mm, such as less than approximately 2500 mm. The module length 474 is about 1000 mm to about 2500 mm, such as about 1000 mm to about 2000 mm, such as about 1100 mm to about 1500 mm, such as about 1150 mm to about 1250 mm.

[0088] The dimensions of each polishing module 450a, 450b, 450c enable each polishing module 450a, 450b, 450c to be smaller than a conventional chemical mechanical polishing assembly. Module height 452, module width 454, and module length 474 further enable vertical stacking of the polishing modules 450a, 450b, 450c. By not rotating the carrier head assembly 210 or the platform 404, the amount of rotating equipment within the polishing modules 450a, 450b, 450c is reduced, as rotating equipment increases system complexity and requires frequent replacement. Thus, by not utilizing a rotating carrier head assembly 210, a smaller size of the polishing modules 450a, 450b, 450c is achieved. In this configuration, the polishing modules 450a, 450b, 450c are significantly simplified and, therefore, more reliable, easier to maintain, and significantly less expensive than conventional CMP polishing hardware designs that require simultaneous and separate rotation and translation of portions of the carrier head and the polishing pad relative to one another.

[0089] Figure 5 yes Figure 6 and Figure 7 The polishing station 600 or the polishing station 700 is shown as a schematic top view in partial cross-section. The polishing station 600, 700 can be used to replace Figures 2A-4C In some embodiments, the polishing stations 600 and 700 may be integrated into one of the polishing stations 200, 300, and 400. Figures 2A-4CThe polishing stations 200, 300, and 400 are arranged such that the polishing stations 600 and 700 are one or more of the polishing modules 250a, 250b, 250c, 250d, 350a, 350b, 350c, 350d, 450a, 450b, and 450c, and are stacked. Both the polishing station 600 and the polishing station 700 include a head actuation assembly 505, a plurality of liquid delivery modules 518, a carrier loading station 268, a first head washing device 266a, a second head washing device 266b, and a plurality of platforms. Figure 6 In the polishing station 600, the platforms are fixed platforms 638a, 638b. Figure 7 In the polishing station 700, the platform is a multi-pad support platform 738a, 738b.

[0090] Figure 6 is a schematic side cross-sectional view of the polishing station 600. Figure 6 6. As shown in the embodiment of FIG. 5 , each of the head assemblies 504a, 504b is coupled to the center rail support 502 using two rails 610. The rails 610 extend along the length of the center rail support 502. The rotation axes 606, 608 of the rotation axis 510 are also shown, such that the first head assembly 504a has a first rotation axis 510 with a first rotation axis 606, and the first head assembly 504a is actuated about the rotation axis 606. In some embodiments, the first head assembly 504a and the second head assembly 504b can each be actuated using a rotary motor (not shown) configured to position and angularly move the first head assembly 504a and the second head assembly 504b about their respective rotation axes 606, 608. The second head assembly 504b has a second rotation axis 510 with a second rotation axis 608, and the second head assembly 504b is actuated about the rotation axis 608. The platforms 638a, 638b of the polishing station 600 are not configured to be actuated, but rather are fixed in position, so that the use of the pads 236a, 236b is similar to that of the polishing station 600. Figures 2A-2C The pad is similar.

[0091] Figure 7 is a schematic side cross-sectional view of another polishing station 700. The polishing station 700 includes multiple pad support platforms 738a, 738b, such that the polishing station 700 includes a first platform 738a and a second platform 738b, the first platform 738a being configured to support pads on opposite sides of the first platform 738a, and the second platform 738b being configured to support pads on opposite sides of the second platform 738b. The polishing station 700 further includes one or more pad washing stations 702a, 702b.

[0092] Back to Figure 5, both polishing station 600 and polishing station 700 can further include a liquid delivery and adjustment arm disposed on the head actuation assembly 505, such that the liquid delivery and adjustment arm is coupled to a separate guide rail positioned along the central guide rail bracket 502. The central guide rail bracket 502 extends along the length of the upper inner wall 202A. The central guide rail bracket 502 includes a metal beam configured to support one or more head assemblies 504a, 504b. In some embodiments, the first head assembly 505 is coupled to a first side of the beam, and the second head assembly 505 is coupled to a second side of the beam. The central guide rail bracket 503 includes a groove along which the head assemblies 504a and 504b can be actuated, and the groove can further include a power supply and fluid delivery conduit (not shown) disposed through the groove. The liquid delivery and adjustment arm is coupled to Figures 3A-3C The liquid delivery arm 302 and the pad conditioner arm 310 are similar. The pad conditioner arm 310 can also be connected to Figure 7 The pad conditioner 720 is similar.

[0093] The head actuator assembly 505 includes a first head assembly 504a and a second head assembly 504b. Each of the first head assembly 504a and the second head assembly 504b is similar and is disposed on opposite sides of the central guide rail support 502. The central guide rail support 502 is coupled to the upper inner sidewall 202A of the system body 202 and is disposed within the process volume 226 along the length of the platform. The first head assembly 504a extends above a first platform (such as the first platform 638a or the first platform 738a). The second head assembly 504b extends above a second platform (such as the first platform 638b or the first platform 738b).

[0094] Each of the head assemblies 504a and 504b is configured to actuate the carrier head assembly 210 coupled to its distal end. The head assemblies 504a and 504b further include a linear actuator 508 coupled to the center rail bracket 502, and a support arm 512 coupling the carrier head assembly 210 to the linear actuator 508. The linear actuator may include a linear motor, a lead screw, a ball screw, a rack and pinion, a chain drive, a belt drive, or other similar device configured to translate a component back and forth in a linear direction. The support arm 512 is coupled to a rotational axis 510 disposed through the inner distal end of the support arm 512. The rotational axis 510 is further disposed on or through a portion of the linear actuator 508 and may include a motor or pneumatic assembly coupled to the rotational axis 510 to enable the support arm 512 and the carrier head assembly 210 to swing about the rotational axis 510, thereby translating within the xy plane. A head support shaft 514 is provided to pass through a distal end of the support arm 512 opposite to the rotation axis 510 . The head support shaft 514 supports the carrier head assembly 210 and couples the carrier head assembly 210 to the support arm 512 .

[0095] Both head assemblies 504a and 504b can be coupled together or independently controlled using commands transmitted from system controller 170. In some embodiments, head assemblies 504a, 504b are independently controlled such that head assemblies 504a, 504b are actuated along longitudinal direction 506 of center rail support 502 and are separately pivoted about rotation axis 510 using a rotary actuator (e.g., a stepper motor). In some embodiments, as Figure 6-8B As shown, the head assemblies 504a, 504b are actuated along the central guide rail support 502 using linear actuators, which may include linear motors, lead screws, ball screws, rack and pinion gears, chain drives, belt drives, or other similar devices configured to translate components back and forth in a linear direction. Each of the head assemblies 504a, 504b is coupled to one or more guide rails 610 ( Figure 6 ). One or more guide rails 610 enable the head assemblies 504a, 504b to be actuated along the length of the central guide rail support 502. Actuating the head assemblies 504a, 504b along the length of the central guide rail support 502 enables a wide range of polishing patterns, allowing the head assemblies 504a, 504b to move in a path that promotes uniform polishing of the substrate. The movement further enables the polishing stations 600 and 700 to perform the polishing process without rotating the carrier head assembly. The use of a non-rotating carrier head assembly reduces the complexity of the system, reduces the possibility of mechanical failure, and reduces the overall size of the system. Therefore, in some embodiments, the linear actuator is the only means of generating relative motion between the carrier head and the non-axisymmetric polishing pad disposed on the rectangular pad support surface.

[0096] Each of the liquid delivery modules 518 is disposed above a portion of one of the platforms 638a, 638b or 738a, 738b. Figures 2A-2C The liquid delivery module 518 is similar to the liquid delivery module 218 of the polishing station 600, 700. The liquid delivery module 518 is coupled to the interior side surface of the system body 202 and may also be coupled to the interior top surface of the system body 202. Alternatively, the liquid delivery module 518 may be located outside the system body 202, and one or more polishing stations 600, 700 may share the same liquid delivery module 518.

[0097] Each of the carrier loading station 268, the first head washing device 266a and the second head washing device 266b is disposed between the platforms 638a, 638b or the platforms 738a, 738b. Figures 2A-2C The embodiment of is similar. Figure 6As shown, the carrier loading station 268, the first head washing device 266a, and the second head washing device 266b are supported by a central support 620. The central support 620 is connected to the central support 620. Figures 2A-2C The center bracket 208 is similar.

[0098] The platforms 638a, 638b of the polishing station 600 are fixed and, therefore, are not configured to move relative to the walls of the process module during or between process operations. However, the pads coupled to each of the platforms 738a, 738b of the polishing station 700 are configured to move between process operations, such that the pads disposed on the upper surfaces of the platforms 738a, 738b facing the head assemblies 504a, 504b are interchanged with different pads that have been cleaned and / or conditioned. Each of the platforms 638a, 638b and 738a, 738b is coupled to a platform support 516. In some embodiments, the platform support 516 is coupled to the side surfaces of each of the platforms 638a, 638b and 738a, 738b and the first inner sidewall 202c of the system body 202. The platform support 516 provides mechanical support for each of the platforms 638a, 638b and 738a, 738b. The assembly of one of the platforms 638a, 638b with the platform support 516 forms the platform assembly 650. The assembly of one of the platforms 738a, 738b with the platform support 516 forms the multi-pad platform assembly 750. The platform support 516 may be a cantilever type support, such that only one side of the platform support 516 is mechanically coupled to the system body 202, and the end of the platform support 516 coupled to the platforms 638a, 638b, 738a, 738b is freely suspended. Alternatively, the platform support 516 is provided on either side of each of the platforms 638a, 638b, 738a, 738b and supports both sides of the platforms 638a, 638b, 738a, 738b. In embodiments where there are two platform supports 516 for each of the platforms 638a, 638b, 738a, 738b, the platform assemblies 650, 750 are coupled to both the first inner sidewall 202c and a side of the center support 620.

[0099] exist Figure 7 In the polishing station 700, the platform support 516 may further include a similar Figures 4A-4CBelt drive 402 of the platform support 516. In embodiments where the platform support 516 includes the belt drive 402, the platform support 516 further includes a first roller 510a and a second roller 520b, each spaced apart and disposed on opposite ends of the platforms 738a, 738b. The first roller 510a and the second roller 520b form part of a conveyor belt system that includes a belt 770 disposed about each of the platforms 738a, 738b and configured to be rotated by the first roller 510a and the second roller 770. The assembly of one of the platforms 738a, 738b, each of the platform support 516, the rollers 510a, 510b, and the belt 770 forms a multi-pad platform assembly 750. Two multi-pad platform assemblies 750 are present within the process volume 226 of the polishing station 700. The multi-pad platform assembly 750 enables two or more pads to be indexed about a single platform 738a, 738b. The belt 770 moves in a rolling direction 764 that is parallel to the longitudinal direction 506.

[0100] Each belt 770 is disposed around the first roller 510a, the second roller 520b, and one of the platforms 738a, 738b. One or more pads are coupled to each of the belts 770. By rotating each of the first roller 510a and the second roller 510b, the pads are indexed between a processing position and a cleaning position. The processing position and the cleaning position are Figures 4A-4C The processing position is similar to that of the first and second rollers 510a, 510b. Rotating the first and second rollers 510a, 510b subsequently causes the belt 770 to index because the belt 770 is disposed around the first and second rollers 510a, 510b and in contact with the first and second rollers 510a, 510b. The pad is coupled to the belt 770 and thus moves along with the belt 770 from one side of the platforms 738a, 738b to the opposite side of the platforms 738a, 738b. The belt 770 can also contact the platforms 738a, 738b on both sides of the platforms 738a, 738b, placing the belt 770 in a tensioned state and in contact with each of the first and second rollers 510a, 510b and one of the platforms 738a, 738b. Using the belt 770 and the rollers 510a, 510b to move the pad from one side to the other allows one of the pads disposed on the belt 770 to be washed while the other is being used for substrate processing. The pad conveyor system is also compact and enables reduction in size of the polishing modules 450a, 450b, 450c, 450d. The position of the platform 404 within the pad conveyor system 408 enables efficient indexing of the pads 406a, 406b while enabling pressure to be applied to the pads 406a, 406b during processing.

[0101] The polishing station 600 has a station height 604 and a station width 602 ( Figure 6 ) and a station length 530. Station height 604 is the height of polishing station 600 in the z-direction, which is orthogonal to the x-direction and the y-direction. Station width 602 is the width of one of polishing stations 600 in the y-direction, which is orthogonal to the x-direction and the z-direction. Station length 530 is the length of one of polishing stations 600. Station height 604 is less than approximately 2000 mm, such as less than approximately 1500 mm, such as less than approximately 1250 mm, such as less than approximately 1050 mm, such as less than approximately 1000 mm. Station width 602 is less than approximately 3500 mm, such as less than approximately 3000 mm, such as less than approximately 2750 mm, such as less than approximately 2500 mm. Station length 530 is from approximately 1000 mm to approximately 2500 mm, such as from approximately 1000 mm to approximately 2000 mm, such as from approximately 1000 mm to approximately 1500 mm, such as from approximately 1100 mm to approximately 1250 mm.

[0102] Each of the platforms 638a, 638b, 738a, 738b has a rectangular shape in plan view, so that the top surface of each of the platforms 638a, 638b, 738a, 738b on which the pad is placed is rectangular. In some embodiments, the corners of the rectangle can be chamfered or rounded. In some embodiments, the shape of the top surface of the platforms 638a, 638b, 738a, 738b is oval. In some embodiments, as shown in FIG. Figures 2A-3C As described, each of the platforms 638a, 638b, 738a, 738b has a first length L1 and a first width W1 and similar advantages as described therein.

[0103] Each of the polishing stations 600 is smaller than a conventional chemical mechanical polishing assembly. The station height 604, station width 602, and station length 530 further enable stacking of multiple polishing stations 600. By not rotating the carrier head assembly 210 or the platforms 638a, 638b, the amount of rotating equipment within the polishing station 600 is reduced. Since rotating equipment is typically bulky, removing the rotating equipment allows for a smaller polishing station 600 size. In this configuration, the polishing station 600 is greatly simplified and therefore more reliable, easier to maintain, and much less expensive than conventional CMP polishing hardware designs that require portions of the carrier head and the polishing pad to be separately rotated and translated relative to each other simultaneously. Figures 2A-4C Compared with the embodiment, Figure 6The polishing station 600 further reduces mechanical complexity. By providing a single pivot point at the rotational axis 510 for each head assembly 504a, 504b, and a single set of guide rails 610 along which the head assemblies 504a, 504b are actuated, a range of motion similar to that of the xy overhead assembly 204 is achieved without positioning any moving parts directly above the polishing pad, which could generate particles and increase the potential for exposure of the moving parts to process chemicals. By not positioning the moving parts directly above the polishing pad, the amount of contaminants that could land on the polishing pad can be reduced while still achieving the range of motion of each head assembly 504a, 504b.

[0104] refer to Figure 7 The first platform 738a has a first pad 236a on a first side and a second pad 708a on a second side of the first platform 738b opposite the first side. The second pad 708a is either a polishing pad or a shaving pad. The second platform 738b has a first pad 236b on a first side and a second pad 708b on a second side of the second platform 738b opposite the first side. The second pad 708b is either a polishing pad or a shaving pad. In some embodiments, the first pad 236b and the second pad 708b disposed on the second platform 738b are referred to as the third pad and the fourth pad, respectively, to distinguish them from the first pad 236a and the second pad 708a on the first platform 738a. The first belt 770 is configured to index the first pad 236a and the second pad 708a to periodically swap the positions of the pads 236a and 708a. The second belt 770 is disposed around the platform 738b and is configured to index the first pad 236b and the second pad 708b to periodically swap the positions of the pads 236b and 708b. The first pad 236a and the second pad 708a are indexed between process operations so that the first pad 236a and the second pad 708a are held in place during the process operations.

[0105] In some embodiments, each of the first and second platform 738a, 738b is provided with either a polishing pad or a buffing pad, enabling multiple processes to be performed on a substrate within the same polishing station 700. In other embodiments, each of the first and second platform 738a, 738b is provided with two different polishing pads, both configured to polish a substrate but having different chemical or mechanical properties (e.g., polishing surface hardness, different groove patterns, material composition, etc.). In the polishing station 700, one of the first pad 236a or the second pad 708a is used to process a substrate while the other is being washed and / or cleaned. Processing the substrate includes polishing or buffing the substrate. Similarly, one of the first pad 236b or the second pad 708b of the second platform 738b is used to process a substrate while the other is being washed and / or cleaned.

[0106] exist Figure 7 In the configuration, the polishing station 700 is greatly simplified and therefore more reliable, easier to maintain, and much less expensive than conventional CMP polishing hardware designs that require portions of the carrier head and the polishing pad to be rotated and translated simultaneously and separately relative to each other. Figures 4A-4C Compared with the embodiment, Figure 7 The polishing station 700 further reduces mechanical complexity. By providing a single pivot point for each head assembly 504a, 504b at the rotational axis 510, and providing a single set of guide rails 610 along which the head assemblies 504a, 504b are actuated, a range of motion similar to the range of motion of the xy overhead assembly 204 is achieved without positioning any moving parts directly above the polishing pad, which may generate particles and may also increase the likelihood of exposure of the moving parts to process chemicals. By not positioning the moving parts directly above the polishing pad, the amount of contaminants that may land on the polishing pad is reduced while still being able to achieve the range of motion of each head assembly 504a, 504b. The polishing station 700 and Figure 6 Polishing station 700 is a further improvement over polishing station 600 because it enables multiple pads to be placed on platforms 738a, 738b and allows the pads to be indexed. Utilizing multiple pads on a single platform 738a, 738b allows one of the pads to be used for polishing while another pad is being cleaned. Consequently, downtime in polishing station 700 due to pad cleaning is significantly reduced.

[0107] Washing and / or cleaning of the pads 236a, 236b, 708a, 708b is performed using pad wash stations 702a, 702b. Each pad wash station 702a, 702b includes two wash runway beams 707 coupled to a sidewall of the system body 202 (such as the bottom inner sidewall 202B). The pad wash stations 702a, 702b further include a wash beam 704 disposed between the two wash runway beams 707. The wash beam 704 includes a plurality of nozzles 705 disposed on the wash beam 704, the plurality of nozzles 705 being oriented toward the bottom side of one of the platforms 738a, 738b. The plurality of nozzles 705 are configured to distribute a cleaning fluid 706 (such as water) onto the pads (such as the second pads 708a, 708b) disposed on the bottom side of the platforms 738a, 738b. Each of the nozzles 705 is coupled to a fluid source (such as a liquid delivery unit). Wash beam 704 is similar to one of beams 228 , 230 of xy overhead assembly 204 in that wash beam 704 is configured to actuate along the length of wash run beam 707 beneath the bottom surface of each of platforms 738a , 738b .

[0108] Each of the pad washing stations 702a, 702b further includes an adjuster arm 710. Each of the adjuster arms 710 further includes a pad adjuster 720, a connecting arm 712, an adjuster rotation shaft 714, a linear adjuster actuator 716, and one or more adjuster rails 718 disposed in the sides of the center support 620. The pad adjuster 720 is similar to one of the pad adjusters 214 or the adjuster head 314.

[0109] At least one conditioner arm 710 is configured for use with each pad washing station 702a, 702b. Conditioner arm 710 is configured to actuate along the length of center support 620 to reach the entire length of the polishing pad and also to swing about a conditioner rotation axis 719 disposed through each of conditioner rotation axes 714. The combination of swinging about conditioner rotation axis 719 and linear motion along conditioner rails 718 enables pad conditioner 720 to reach all desired areas of a pad coupled to one of platforms 738a, 738b.

[0110] The connecting arm 712 is coupled to an adjuster rotation shaft 714 such that the adjuster rotation shaft 714 is disposed through an inner distal end of the connecting arm 712. The adjuster rotation shaft 714 is further disposed through a portion of a linear adjuster actuator 716 and may include a motor or pneumatic assembly coupled to the adjuster rotation shaft 714 to enable the connecting arm 712 and the pad adjuster 720 to swing about an adjuster rotation axis 719. The pad adjuster 720 is coupled to a distal end of the connecting arm 712 opposite the adjuster rotation shaft 714.

[0111] Figure 8Ais a schematic side cross-sectional view of the polishing station 800. The polishing station 800 and Figure 7 The polishing station 700 is similar to the polishing station 700, but the head actuator assembly 505 is replaced by the head actuator assembly 804. The polishing station 800 can be used to replace Figures 2A-4C In some embodiments, the polishing station 800 may be integrated into one of the polishing stations 200, 300, and 400. Figures 2A-4C The polishing station 800 is configured to be within a polishing station 200, 300, or 400, such that the polishing station 800 is one or more of the polishing modules 250a, 250b, 250c, 250d, 350a, 350b, 350c, 350d, 450a, 450b, or 450c, and is stacked. The head actuation assembly 804 includes both a first head assembly 504a and a second head assembly 504b. The first head assembly 504a and the second head assembly 504b are each individually coupled to an arm support 814a, 814b. The arm supports 814a, 814b can be a single arm support extending outward from the central rotation axis 812, or a plurality of arm supports 814a, 814b extending outward from the central rotation axis 812. In some embodiments, a different arm support 814a, 814b exists for each of the head assemblies 504a, 504b. The first head assembly 504a is supported by a first arm support 814a, and the second head assembly 504b is supported by a second arm support 814b.

[0112] The polishing station 800 may further include a liquid delivery and adjustment arm disposed on the head actuator assembly 804 such that the liquid delivery and adjustment arm is coupled to the separate rails along the central rail support 806. Figures 3A-3C The liquid delivery arm 302 and the pad conditioner arm 310 are similar. The pad conditioner arm 310 can also be connected to Figure 7 The pad conditioner 720 is similar.

[0113] A central rotation axis 812 is disposed between the first head assembly 504a and the second head assembly 504b. The central rotation axis 812 is configured to enable the first head assembly 504a and the second head assembly 504b to rotate about a central axis 820. Rotating the first head assembly 504a and the second head assembly 504b about the central axis 820 enables the positions of the first head assembly 504a and the second head assembly 504b to be switched, such that the first head assembly 504a is positioned above the second platform 738b and the second head assembly 504b is positioned above the first platform 738a. Thus, a substrate held by one of the head assemblies 504a, 504b can be efficiently moved to any one of a plurality of pads of the polishing station 800, such as one of the pads 236a, 236b, 708a, 708b. The arm supports 814a, 814b can also be used to support one or more liquid delivery units, liquid delivery arms, or regulator arms.

[0114] A central rotational axis 812 is mechanically coupled to and extends downwardly from a linear actuator 810. The linear actuator 810 is similar to the linear actuator 508 or the linear adjuster actuator 716. The linear actuator 810 is configured to move along one or more guide rails 808, which are coupled to a central guide rail bracket 806. The central guide rail bracket 806 is coupled to or is a portion of the upper inner sidewall 202A of the system body 202. The guide rails 808 are disposed on a bottom surface of the central guide rail bracket 806. The guide rails 808 and the central guide rail bracket 806 extend along the length of the polishing station 800, allowing the head assemblies 504a, 504b to be actuated over a desired area of ​​each of the pads 236a, 236b, 708a, 708b.

[0115] Figure 8B yes Figure 8A Schematic top partial cross-sectional view of polishing station 800. Rail 808 is shown extending from one side of system body 202 to an opposite side of system body 202. Linear actuator 810 is configured to move in longitudinal direction 852. Figure 8A and Figure 8B The polishing station 800 has Figure 7 The polishing station 700 has similar benefits, but further reduces the number of guide rails to utilize only one set of guide rails 808. This is achieved by utilizing a rotating central axis of rotation 812. The central axis of rotation 812 further enables simultaneous movement of both head assemblies 504a, 504b and reduces mechanical complexity to improve servicing of the polishing station 800.

[0116] Figure 9A and Figure 9B is a schematic diagram of a multi-pad platform assembly 900. The multi-pad platform assembly 900 can be used to replace Figures 4A-4C 、 Figure 7 and either the multi-pad platform assembly 405 or the multi-pad platform assembly 750 of FIG8 . The multi-pad platform assembly 900 is an exemplary embodiment of a multi-pad platform assembly that includes multiple pads that can be indexed within a polishing station or polishing module. The multi-pad platform assembly 900 includes a platform 905, a first roller 904a disposed on a first side of the platform 905, a second roller 904b disposed on a second side of the platform 905, platform supports 920 disposed on both sides of the platform 905, a belt 906 disposed around the platform 905 and the rollers 904a, 904b, and a pad stopper 926.

[0117] The platform 905 is formed of a metal material and may include one or more sub-layers (e.g., coatings or removable plates) for supporting the pads 902a, 902b to further minimize wear and allow the belt 906 to move relative to the platform 905. The platform 905 may have grooves disposed at opposite ends of the platform 905 where the rollers 904a and 904b are positioned. The grooves are configured to reduce the gap through which the belt 906 travels when stretched between the platform 905 and the rollers 904a, 904b. Figure 9A As shown, the first end 916 of the first roller 904a is disposed within an opening in the first platform support 920, while the second end 918 of the first roller 904a is disposed within an opening in the second platform support 920. A bearing 922 is disposed between the first roller 904a and each of the platform supports 920 to enable rotation of the first roller 904a. A motor 924 can be coupled to either the first end 916 or the second end 918 of the first roller 904a and disposed within the first platform support 920 to generate rotation of the first roller 904a. In some embodiments, the motor 924 is disposed within both the first platform support 920 and the second platform support 920 and coupled to both the first end 916 and the second end 918 to reduce strain on a single motor 924. The second roller 904b is disposed within the platform support 920 in a manner similar to the first roller 904a.

[0118] One or more pad stops 916 are provided around the contour in which the pad is positioned. The one or more pad stops 916 can be a single pad stop 916 that is configured to surround the entire polishing pad, or a plurality of separate pad stops 916 that are positioned at various locations around the perimeter of a polishing pad (such as polishing pads 902a, 902b). The pad stops 916 can be slight protrusions extending outward from the belt 906, or can be grooves within the belt 906.

[0119] like Figure 9B As shown, belt 906 is wrapped around polishing platform 905 so that belt 906 contacts first surface 908 and second surface 910 opposite first surface 908. Belt 906 includes a first pad support surface 912 and a second pad support surface 914. First pad support surface 912 is where first pad 902a is positioned. Second pad support surface 914 is where second pad 902b is positioned. First pad support surface 912 and second pad support surface 914 are configured to actuate over each of first roller 904a and second roller 904b when pads 902a, 902b are indexed from one side of platforms 908, 910 to the opposite side of platforms 908, 910.

[0120] Figure 101 is a flow chart illustrating a method 1000 for utilizing one or more polishing pads during a substrate polishing sequence. The polishing pad used in method 1000 can be any of the polishing pads 236a, 236b, 406a, 406b, 708a, and 708b of the embodiments described herein. During method 1000, during operation 1002, a substrate is polished on a first polishing pad while the first polishing pad is held in a first position. The first position is a stationary position such that the first polishing pad does not move. The first position is an upward position such that the first polishing pad is positioned facing one or more carrier head assemblies, such as carrier head assembly 210.

[0121] When in the first position, the substrate is driven against the first polishing pad and actuated in a predetermined pattern to polish the substrate. In some embodiments, operation 1002 is a buffing operation rather than a polishing operation, such that the polishing pad is a buffing pad and the provided fluid implements a buffing process. In other embodiments, operation 1002 is a polishing operation rather than a buffing operation, such that the first polishing pad is a polishing pad. During processing, the substrate moves over the first pad in a predetermined pattern and at a predetermined speed to achieve a desired polishing profile. When the substrate is actuated over the first polishing pad, the substrate can move along a double twisted path to ensure uniform material removal across the entire substrate surface. During operation 1002, a slurry or other polishing fluid can be dispensed onto the polishing pad. In some embodiments, a conditioning disk can also be used during operation 1002 to condition the polishing pad on which the substrate is being processed.

[0122] After polishing the substrate using the first polishing pad during operation 1002, the polishing pad is indexed from the first position to the second position during operation 1004. The second position is a position on the opposite side of the platform (such as one of the platforms 404, 738a, or 738b). The second position faces one or more pad washing stations, such as one of the pad washing stations 410, 702a, 702b. Indexing the first polishing pad includes using one or more belts (such as belts 770, 906, or Figures 4A-4C In some embodiments, the first polishing pad is coupled to a belt wrapped around the platform. One or more rollers can be configured to move the belt and the polishing pad.

[0123] Once the first polishing pad is in the second position, the second polishing pad is positioned in the first position because the second polishing pad is on the opposite side of the belt. The second polishing pad can be any of polishing pads 236b, 406a, 406b, 708a, and 708b. In some embodiments, the second polishing pad is used to polish the substrate during operation 1006 and can therefore be a polishing pad. In other embodiments, operation 1006 is a polishing operation rather than a polishing operation, such that the second polishing pad is a standard polishing pad. Similar to operation 1002, the substrate moves over the second polishing pad in a predetermined pattern and at a predetermined speed to obtain a desired substrate profile. When the substrate is actuated over the second polishing pad, the substrate can move in a double twisted path. During operation 1006, one or more fluids can optionally be dispensed onto the polishing pad.

[0124] Once the first polishing pad is in the second position, the first polishing pad is cleaned during operation 1008. Operation 1008 includes spraying a cleaning fluid, such as water, onto the polishing pad. During operation 1008, the first polishing pad is also conditioned using a conditioning disk, such as one or more of pad conditioners 214 or 720. The pad washing station further includes one or more additional brushes for removing slurry and contaminants from the first polishing pad. The inverted orientation of the first polishing pad further facilitates the removal of slurry and other contaminants, and any material on the polishing pad that is knocked loose falls off the first polishing pad.

[0125] After cleaning the first polishing pad, method 1000 is repeated. The method 1000 can be repeated with either a new substrate or the same substrate. In embodiments where the same substrate is being processed, the head holding the substrate can hold the substrate during indexing of the polishing pad and place the substrate back onto the polishing pad without releasing the substrate or grabbing a new substrate. In some embodiments, there are one or more intermediate operations in which a second polishing pad and / or buffing pad is cleaned similarly to the first polishing pad.

[0126] Benefits of the present disclosure include the ability to create a more modular and compact polishing station. In some embodiments, the polishing station described herein can perform up to four different process operations within a single module. Simultaneous use of substrate polishing and pad washing can reduce overhead time. Pad and head washing can also be improved by increasing the wash time for both the pad and head.

[0127] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A substrate polishing system, comprising: a plurality of polishing stations positioned in a stacked orientation, wherein each of the polishing stations comprises: a system body including one or more walls defining a processing region; a platform disposed within the processing region of the system body, the platform having a rectangular pad support surface configured to receive a non-axisymmetric polishing pad, wherein long sides of the rectangular pad support surface are aligned in a first direction; and a head assembly disposed above the pad support surface of the platform, and wherein the head assembly comprises: a load-bearing head, the load-bearing head being disposed above the pad support surface of the platform; a linear actuator connected to the central rail bracket; and a support arm coupling the carrier head with the linear actuator, The linear actuator is configured to position the carrier head and the support arm in the first direction.

2. The substrate polishing system of claim 1, wherein the processing area of ​​each of the plurality of polishing stations stacked vertically are isolated from each other.

3. The substrate polishing system of claim 2, wherein the platform comprises a first platform, and the substrate polishing system further comprises: A second platform is disposed within the system body, the second platform having a rectangular pad support surface configured to receive a non-axisymmetric polishing pad, wherein a long side of the rectangular pad support surface is aligned in the first direction.

4. The substrate polishing system of claim 3, wherein the first platform and the second platform each have a length and a width, the length and the width having an aspect ratio greater than about 2:

1.

5. The substrate polishing system of claim 3, further comprising: a first pad driving unit configured to index a first non-axisymmetric polishing pad disposed on a first side of the first platform to a second side of the first platform opposite to the first side; a second pad driving unit configured to index a first non-axisymmetric polishing pad disposed on a first side of the second platform to a second side of the second platform opposite to the first side; as well as A pad washing module including one or more fluid nozzles, the pad washing module being disposed on the second side of the first platform or the second platform.

6. The substrate polishing system of claim 1, further comprising: a pad drive unit configured to index a first non-axisymmetric polishing pad disposed on a first side of the platform to a second side of the platform opposite the first side, wherein the carrier head is positioned over the first side of the platform including the pad support surface; as well as A pad washing module including one or more fluid nozzles is disposed on the second side of the platform.

7. The substrate polishing system of claim 6, wherein a pad conditioner is disposed on the second side of the platform.

8. The substrate polishing system of claim 1, further comprising: a pad conditioner disposed on a conditioning side of the platform, the conditioning side being opposite a polishing side of the platform, wherein the polishing side of the platform includes the rectangular pad support surface; Linear regulator actuator; as well as a connecting arm coupled between the linear adjuster actuator and the pad adjuster, Wherein the linear adjuster actuator is configured to position the pad adjuster and the connecting arm in the first direction.

9. The substrate polishing system of claim 1, wherein the plurality of polishing stations comprises two polishing stations comprising processing areas vertically stacked and fluidically isolated from each other.

10. The substrate polishing system of claim 9, wherein the two polishing stations have a height of less than about 1000 mm and a width of less than about 2500 mm.

11. The substrate polishing system of claim 1, wherein the linear actuator is the only means of producing relative motion between the carrier head and a non-axisymmetric polishing pad disposed on the rectangular pad support surface.

12. A substrate polishing system configured for use during semiconductor manufacturing, the substrate polishing system comprising: a system body including one or more walls defining a processing region; a first platform, the first platform being disposed in the processing area of ​​the system body; a second platform, the second platform being disposed in the processing area of ​​the system body; A central guide rail support, the central guide rail support is arranged between the first platform and the second platform and in the processing area of ​​the system body; A first head assembly, the first head assembly being disposed above one of the first platform or the second platform, the first head assembly comprising: a first carrier head; and a first support arm, the first support arm coupling the first carrier head with the central guide rail bracket; and A second head assembly, the second head assembly being disposed above one of the first platform or the second platform, the second head assembly comprising: a second carrier head; and A second support arm couples the second bearing head to the central guide rail bracket.

13. A substrate polishing system as described in claim 12, wherein the first head assembly further includes a first rotation axis, which is arranged on an inner end of the first support arm opposite to the first carrier head, and the second head assembly further includes a second rotation axis, which is arranged to pass through an inner end of the second support arm opposite to the second carrier head. 14 . The substrate polishing system of claim 12 , wherein at least one pad driving unit is configured to index one or more polishing pads disposed on the first platform and the second platform.

15. A substrate polishing system as described in claim 14, wherein the first platform is configured to have a first pad coupled to a first side facing the first carrier head and a second pad coupled to a second side facing away from the first carrier head, and the second platform is configured to have a third pad coupled to a third side facing the second carrier head and a second pad coupled to a fourth side facing away from the second carrier head.

16. The substrate polishing system of claim 12, further comprising: A first pad washing station and a second pad washing station are disposed on a side of the first platform opposite to either the first head assembly or the second head assembly.

17. The substrate polishing system of claim 16, wherein the first pad washing station further comprises a first pad conditioner, and the second pad washing station further comprises a second pad conditioner.

18. The substrate polishing system of claim 12, wherein the central rail support comprises a first rail on a first side and a second rail on a second side such that the first head assembly is coupled to the first rail and the second head assembly is coupled to the second rail.

19. The substrate polishing system of claim 12, wherein the central rail support is coupled to a wall of the system body, and further comprising: Linear actuators; as well as A central rotating shaft is coupled to the linear actuator, the central rotating shaft having a central rotating axis, wherein both the first head assembly and the second head assembly are coupled to the central rotating shaft.

20. The substrate polishing system of claim 12, further comprising one or more liquid delivery units configured to supply one or more of a slurry, a conditioning fluid, or water.

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