Plasma state monitoring device for connection to impedance adaptation circuit for plasma generation system, plasma generation system and method for monitoring plasma generation system

Abstract

A plasma state monitoring device (1) for a plasma generation system (100) having an impedance adaptation circuit (50) is configured to: a) detect a first set of time-varying measured values (30), which are associated with an impedance, the time-varying measurement values of the first group can be detected at one of the terminals (50a, 50b) of the impedance adaptation circuit (50) and recorded in time successively; b) detecting a second set of time-varying measured values (31) of at least one measured variable selected from the group consisting of a voltage (32), a current (33) and a phase relationship (34) between the voltage (32) and the current (33), the time-varying measured values (31) being recorded in time succession; c) displaying the first group in a first representation (35), where the first representation (35) is a representation without a time axis, and displaying the second group in a second representation (36), where the second representation (36) comprises two axes (36a, 36b), where one axis (36b) is a time axis. The time-varying measurements (30, 31) of the two groups are detected within the same time period.

Description

Technical Field

[0001] The present invention relates to a plasma state monitoring device for connection to an impedance adaptation circuit for a plasma generating system, a plasma generating system and a method for monitoring a plasma generating system. Background Art

[0002] Surface treatment of workpieces by means of plasma, for example in semiconductor production and processing of workpieces with gas lasers, are industrial processes in which plasma is generated, in particular in a plasma chamber, with direct current or with high-frequency alternating signals with operating frequencies in the range of several 10 kilohertz to gigahertz. In such plasma processes, small errors can lead to very large damage.

[0003] The plasma chamber is connected to a high-frequency generator (HF generator) via further electronic components such as coils, capacitors, lines or transformers. These further components can be oscillating circuits, filters or impedance matching circuits. HF generators are usually designed as power converters, which convert the conventional mains voltage with a frequency of 50-60 Hz into the required high-frequency voltage and thus simultaneously into the corresponding power during operation.

[0004] A problem with plasma processes is that the electrical load impedance of the plasma chamber (of the plasma=consumer) occurring during the process depends on the conditions in the plasma chamber and can vary greatly. In particular, the properties of the workpiece, the electrode and the gas ratio are also taken into account.

[0005] High-frequency generators have a limited operating range that is dependent on the impedance of the connected electrical load (consumer). If the load impedance leaves the permissible range, the high-frequency generator may be damaged or even destroyed.

[0006] For this reason, an impedance matching circuit (matchbox) is usually required, which transforms the impedance of the load into a nominal impedance at the generator output.

[0007] Different impedance adaptation circuits are known. For example, impedance adaptation circuits are fixedly set and have a predetermined transformation effect, i.e. they consist of electrical components that do not change during operation, in particular coils and capacitors. This is particularly relevant in the case of constant operation, for example in gas lasers. In addition, impedance adaptation circuits are also known, in which at least some of the components of the impedance adaptation circuit are mechanically variable. For example, variable capacitors driven by an electric motor are known, the capacitance value of which can be changed by changing the arrangement of the capacitor plates relative to one another. Also known are switchable multiple reactances, for example capacitors, which can have different values.

[0008] Roughly speaking, three impedance ranges can be assigned to the plasma. Before ignition, there is a very high impedance, usually with a value greater than 1 kOhm. In normal operation, i.e. when the plasma is used as intended, there is a lower impedance, usually with a value less than 100 Ohm. In the event of an undesired partial discharge (arc) or in the event of a plasma fluctuation, a very low impedance may occur, usually with a value less than 0.5 Ohm. In addition to these three confirmed impedance ranges, other special states with other corresponding impedance values ​​may also occur. If the load impedance changes suddenly and in this case the load impedance or the transformed load impedance falls outside the permitted impedance range, the HF generator or also the transmission device between the HF generator and the plasma chamber may be damaged. In addition, states of the plasma that are undesirable but still contribute to the generation of a stable state may also occur.

[0009] An impedance adaptation circuit of this type is described, for example, in DE 10 2009 001355 A1.

[0010] Since various plasma states exist, it is not always possible to conclude from the impedance whether the existing plasma state is the desired plasma state. Summary of the invention

[0011] It is therefore an object of the present invention to provide a method by which an operator of a plasma generating system can very quickly and reliably detect undesirable plasma states in order to be able to initiate countermeasures based on this information.

[0012] This object is achieved by a plasma state monitoring device according to independent claim 1, a plasma generation system according to claim 31 and a method for monitoring a plasma generation system according to claim 32. Inventive developments of the plasma state monitoring device are specified in claims 2 to 30.

[0013] The plasma state monitoring device according to the present invention is used to be connected to an impedance adaptation circuit for a plasma generation system. The impedance adaptation circuit can also be called an adapter box. The plasma state monitoring device is configured to detect (erfassen) a first group of time-varying measured values. The time-varying measured values ​​of the first group are associated with impedance, which can be detected at one of the terminals (e.g., input terminals or output terminals) of the impedance adaptation circuit and recorded successively in time. Preferably, the time-varying measured values ​​of the first group are impedance. The time-varying measured values ​​of the first group can also be a reflection coefficient related to impedance. The wording "record" can be understood as measurement or calculation. The plasma state monitoring device is also configured to detect the time-varying measured values ​​of at least one measurement parameter of the second group. The at least one measurement parameter is selected from: voltage, current, or the phase relationship between voltage and current. The time-varying measured values ​​of the corresponding measurement parameters are also recorded successively in time. Preferably, at least two measurement parameters are selected, and further preferably, all three measurement parameters are selected. Further preferably, the second group includes the same number of time-varying measured values ​​for each measurement parameter. Therefore, there can be one hundred time-varying measured values ​​of voltage. There may be one hundred time-varying measurements of the current. There may be one hundred time-varying measurements of the phase relationship between the current and the voltage. Here, it is preferred that the time-varying measurements of the corresponding measured variables are recorded sequentially in time only. Thus, for example, the first time-varying measurement of the voltage, the first time-varying measurement of the current, and the first time-varying measurement of the phase relationship may be recorded at the same time or immediately thereafter in sequence (i.e., in a very close time relationship). Then, the corresponding second time-varying measurement of the measured variable is recorded after the corresponding first time-varying measurement of the same measured variable in time. In addition, the plasma state monitoring device is configured to display the time-varying measurement of the first group in a first diagram (Diagramm). The first diagram is a diagram without a time axis, in particular a diagram for displaying complex impedance or its inverse, complex reflection coefficient and / or complex reflection power, preferably a Smith chart. Here, "complex" refers to the mathematical name of a numerical value having a real part and an imaginary part. The plasma state monitoring device is further configured to display the time-varying measurement of at least one measured variable of the second group in a second diagram. The second diagram may preferably be a diagram with two axes, wherein one axis is a time axis. The time-varying measured values ​​of the first group and the time-varying measured values ​​of the corresponding measured variable of the second group are detected at least partially or completely in the same time period, thereby enabling state monitoring of the plasma generation system. The term "partially in the same time period" is preferably understood to mean that the first time-varying measured value of the first group and the first time-varying measured value of the at least one measured variable of the second group are detected with a time offset of less than 500 ms, 100 ms or less than 50 ms.As a result, the operator of the plasma generation system can grasp the relationship between the detected variable (e.g. impedance) and the detected measurement variable (e.g. voltage, current and / or the phase relationship between current and voltage) in a very intuitive way. By means of the parallel visualization of different device parameters, it is immediately clear to the operator whether a permissible plasma state exists. As a result, the operator can intervene in the regulation of the plasma generation system very quickly. If only the impedance is displayed, an undesirable plasma state may not be recognized or cannot be recognized quickly. Since at least one further measurement variable is additionally displayed, the operator can immediately determine whether the further measurement variable and the detected impedance match the desired plasma state. In this way, significant damage, for example to semiconductor products manufactured using a plasma process, can be reduced or avoided.

[0014] In an advantageous extension, an output device is provided. The plasma state monitoring device is configured to display the first and second diagrams to an observer simultaneously and visually, i.e., for example, simultaneously on the same output device. The output device may be a screen. The output device may also be simply a network server that is called by a computer and presented on a screen.

[0015] In an advantageous development, the plasma state monitoring device is configured to detect a first set of time-varying measured values ​​and a second set of time-varying measured values ​​of the at least one measured variable at a measuring point in the plasma generation system. It is particularly advantageous if both sets of time-varying measured values ​​are detected at the same measuring point. This allows particularly good comparability.

[0016] In an advantageous extension, the measuring point can be arranged in the region of the input terminal of the impedance adaptation circuit. Alternatively, the measuring point can be arranged in the region of the output terminal of the impedance adaptation circuit. For example, the input terminal or the output terminal can be a plug connection on the housing of the impedance adaptation circuit. The term "in the region" should be understood in particular to mean that the measuring point can be arranged less than 50 cm, 30 cm or less than 10 cm from the input terminal or the output terminal. Preferably, the measuring point can be arranged outside the housing of the impedance adaptation circuit. The measuring point can also be arranged inside the housing of the impedance adaptation circuit.

[0017] In an advantageous development, a measuring unit is provided. The measuring unit is configured to measure a second set of time-varying measured values ​​in the form of the at least one measured variable, in particular a plurality of measured variables. The plasma state monitoring device can also be configured to calculate a first set of time-varying measured values ​​from the measured time-varying measured values ​​of the at least one measured variable (current, voltage and / or phase relationship between current and voltage) of the second set. Preferably, complex currents and complex voltages are measured so that impedance, i.e., the first set of time-varying measured values, can be calculated therefrom.

[0018] In an advantageous extension, the measuring unit is configured to measure a second set of time-varying measured values ​​in the form of the measured variables "voltage" and "current". In this case, in particular, a complex value is obtained, which is related to the measured values ​​of the current and the voltage. The plasma state monitoring device can be configured in particular to calculate a phase relationship from the measured current and the measured voltage. Here, the time-varying measured values ​​of the current and the voltage measured simultaneously or as close as possible in time can be settled with each other. Preferably, a phase value is calculated for each measured value of the current and each measured value of the voltage. Then, these three time-varying measured values ​​of the three measured variables can be plotted in a second diagram. Here, it is particularly advantageous if only the current and the voltage need to be measured.

[0019] In an advantageous embodiment, the measuring unit comprises a directional coupler. Via the directional coupler, for example, the power of the incident wave and the reflected wave can be measured. Here, the power measurement of the forward power can be correlated with the incident wave. Here, the power measurement of the reflected power can be correlated with the reflected wave. As an alternative to the directional coupler, the measuring unit can comprise a current sensor and a voltage sensor.

[0020] In an advantageous extension, the measuring unit comprises a digitizing device, in particular in the form of an A / D converter (analog / digital converter). The digitizing device is configured to digitize a second group of time-varying measured values ​​of the at least one measured variable. The digitizing device has a sampling rate preferably greater than 50kHz. The sampling rate can preferably be greater than 0.5MS / s (megasamples per second), 1MS / s, 10MS / s or 100MS / s. This ensures that rapid changes in the time-varying measured values ​​of the first group can be detected. The digitizing device is particularly configured to digitize the time-varying measured values ​​of the current and the time-varying measured values ​​of the voltage simultaneously or immediately thereafter. In this case, the digitizing device may comprise an A / D converter with at least two channels or may comprise two A / D converters. In addition, the digitizing device may also comprise an FPGA and / or a DSP to further mathematically process the digitized measured values.

[0021] In an advantageous embodiment, a storage device is provided. The digitizing device is configured to store the digitized time-varying measured values ​​of the second group in the storage device. The storage device can be configured, for example, as a ring memory. The plasma state monitoring device (in general) or the digitizing device (in particular) can also be configured to store the calculated phase relationship between the current and the voltage in the storage device. This also applies to the time-varying measured values ​​of the first group, that is, in particular to the impedance.

[0022] In an advantageous extension, the plasma state monitoring device is configured to receive a trigger signal, in particular in the form of a pulse signal of an HF generator. The plasma state monitoring device can be further configured to detect a first group of time-varying measured values ​​and a second group of time-varying measured values ​​of the at least one measured variable when such a trigger signal is present. Preferably, the time-varying measured values ​​are detected for a certain duration or are detected continuously and can be designed to be displayed in the first and second diagrams. This detection for a certain duration or this continuous detection can also be included in storage in a storage device. In the case of continuous detection, the storage device can be rewritten from the beginning once it is completely full. Therefore, a storage device in the form of a ring memory is particularly advantageous. The plasma state monitoring device is preferably configured to be triggered at the rising edge of the pulse signal of the HF generator. In principle, the plasma state monitoring device can also be triggered at the falling edge.

[0023] In an advantageous embodiment, the plasma state monitoring device is designed to continuously detect new measured values ​​of the first and second groups and to display them in the first and second representations, whereby the first and second representations are continuously updated.

[0024] In an advantageous embodiment, the plasma state monitoring device is designed to detect a certain number of measured values ​​of the first and second groups each time a trigger signal is received and plot them in the corresponding first and second diagrams. Thus, the first and second diagrams can be continuously updated with the current measured values ​​of the first and second groups for periodically occurring trigger signals. "Plotting into a diagram" means that the plasma state monitoring device is configured to transmit the corresponding values ​​to the output device so that the output device can display these values ​​accordingly.

[0025] In an advantageous embodiment, the number of time-varying measured values ​​of the first group corresponds to the number of time-varying measured values ​​of the corresponding measured variable of the second group or deviates therefrom by at most 10%. Thus, for example, there can be one hundred time-varying measured values ​​of the impedance, and preferably one hundred time-varying measured values ​​of the current, one hundred time-varying measured values ​​of the current and one hundred time-varying measured values ​​of the phase relationship between the current and the voltage, for example. This makes it particularly easy to compare and contrast the individual measured values.

[0026] In an advantageous development, the plasma state monitoring device is designed to display at least some or all of the time-varying measured values ​​of the first group in different representation forms. In particular, different colors are drawn into the first diagram. Here, these representations mark the points in time at which the time-varying measured values ​​of the first group are detected. Thus, it is possible that, for example, one hundred time-varying measured values ​​of impedance can be drawn into the first diagram in colors ranging from yellow to blue, depending on the point in time at which these measured values ​​are detected. "Color" can also be understood as different grayscale values. Another possibility of a representation is, for example, to draw some or all of the time-varying measured values ​​into the first diagram in different shades. As a result, the operator has an immediate overview of the order in which the first measured values ​​were recorded. This is all the more true because the first diagram is preferably a diagram without a time axis, such as a Smith chart, in which the measured values ​​of the first group are drawn.

[0027] In an advantageous embodiment, the plasma state monitoring device is designed to plot the time-varying measured values ​​of the first group in a first diagram using a representation curve, in particular a color curve (greyscale also belongs to this), wherein the representation curve is selected such that the time-varying measured values ​​of the first group detected earlier are displayed darker than the time-varying measured values ​​of the first group detected later. The time-varying measured values ​​of the first group detected later are displayed brighter. The reverse is also possible.

[0028] In an advantageous embodiment, the first axis of the second diagram is a measured value axis and the second axis of the second diagram is a time axis. Preferably, the time axis is the horizontal axis and the measured value axis is the vertical axis.

[0029] In an advantageous embodiment, an input unit is provided and is designed to detect user input. The input unit can include a mouse, a keyboard and / or a touch-sensitive screen. In principle, the input unit can be any device suitable for moving or positioning a pointer, in particular a mouse pointer, a cursor or a marker, in a targeted manner on the screen.

[0030] In an advantageous extension, the plasma state monitoring device is configured to determine which time-varying measurement value in the first or second diagram has been selected by the user by means of an input unit. Then, the plasma state monitoring device is configured to visually highlight the time-varying measurement value detected in the same time period as the selected time-varying measurement value in another diagram. For the case where the user selects the 100th time-varying measurement value in the form of impedance in the first group, the plasma state monitoring device is configured to highlight the 100th time-varying measurement value of the corresponding measurement variable in the second group. Therefore, the plasma state monitoring device can highlight the 100th time-varying measurement value of the voltage, current and / or the phase relationship between the current and the voltage. Conversely, for the case where the user has selected the 50th time-varying measurement value of the voltage in the second group, the plasma state monitoring device can highlight the 50th time-varying measurement value of the impedance in the first group. Visual highlighting can be achieved, for example, by enlarging the display of the corresponding measurement value. It is also conceivable to add a border.

[0031] In an advantageous embodiment, the plasma state monitoring device is designed to determine which time-dependent measured value of the first group of plotted time-dependent measured values ​​has been selected by the user via the input unit in the first representation.

[0032] In an advantageous embodiment, the plasma state monitoring device is designed to visually highlight, in particular to display enlarged and / or to display with a frame, selected time-varying measured values ​​of the first group in the first representation.

[0033] In an advantageous embodiment, the plasma state monitoring device is designed to visually highlight time-varying measured values ​​of the respective measured variable of the second group which are plotted in the second representation and which were detected within the same time period as the selected time-varying measured value of the first group.

[0034] In an advantageous embodiment, the plasma state monitoring device is configured to visually highlight the time-varying measured values ​​of the corresponding measured variables of the second group by enlarging the display and / or using a frame. Additionally or alternatively, the plasma state monitoring device is configured to move or draw the corresponding marking line to the location of the corresponding measured value of the corresponding measured variable of the second group (current, voltage and / or phase relationship) in order to thereby visually highlight it.

[0035] In an advantageous embodiment, the plasma state monitoring device is designed to determine which of the plotted time-varying measured values ​​of the second group of corresponding measured variables (current, voltage and / or phase relation) the user has selected via the input unit in the second representation.

[0036] In an advantageous development, the plasma state monitoring device is configured to determine a movement of a marking line and / or a cursor along the time axis in the second diagram by the user via the input unit. Additionally or alternatively, the plasma state monitoring device is configured to determine a marking of a point or an area in the second diagram by the user via the input unit. Thus, the plasma state monitoring device can determine which time-varying measured values ​​of the corresponding measured variable of the second group are selected in the second diagram.

[0037] In an advantageous extension, the plasma state monitoring device is configured to visually (in particular by means of a representation) highlight time-varying measured values ​​of a first group that are plotted in a first diagram and that are detected within the same time period as selected time-varying measured values ​​of at least one measured variable (voltage, current and / or phase relationship) of a second group.

[0038] In an advantageous extension, the plasma state monitoring device is configured to draw a "region / range" into the first diagram. The plasma state monitoring device is further configured to highlight the time-varying measurement values ​​of the first group located outside the region in the first diagram. In addition or alternatively, the plasma state monitoring device is configured to visually highlight the time-varying measurement values ​​of the at least one measurement parameter of the second group detected in the same time period as the time-varying measurement values ​​of the first group located outside the region in the second diagram. Thus, the allowable impedance range can be defined in a particularly advantageous manner. If the time-varying measurement values ​​(impedance target values) of the first group are outside the range, the time-varying measurement values ​​of the second group corresponding to these time-varying measurement values ​​of the first group can also be highlighted. Thus, the user immediately sees whether the desired plasma state has been achieved.

[0039] In an advantageous extension, the plasma state monitoring device is configured to visually highlight the time-varying measurement values ​​of at least one measurement variable of the second group by: displaying these time-varying measurement values ​​in an enlarged manner and / or with a border; and / or, displaying these time-varying measurement values ​​in different presentation forms, in particular different colors; and / or, adding a mark next to the corresponding time-varying measurement value of the at least one measurement variable of the second group.

[0040] In an advantageous extension, the plasma state monitoring device is configured to output an alarm if the time-varying measured values ​​of the first group are outside the area in the first illustration. The alarm can be implemented acoustically and / or visually. In addition or alternatively, it is also possible to permanently store these time-varying measured values ​​of the first group and the corresponding time-varying measured values ​​of the at least one measured variable of the second group in a storage device. In this case, a subsequent more accurate evaluation can also be achieved. In addition or alternatively, it is also possible that the plasma state monitoring device is configured to shut down the HF generator or reduce its output power.

[0041] In an advantageous embodiment, the plasma state monitoring device is designed to plot a further region in the first representation. The plasma state monitoring device can further be designed to switch off the HF generator or to influence (e.g. reduce) its output power if the time-varying measured values ​​of the first group or a certain number of the time-varying measured values ​​of the first group are outside the further region.

[0042] In an advantageous embodiment, the plasma state monitoring device is designed to define the region based on a user input via the input unit. Thus, the user can specify or input a region in which the time-varying measured values ​​of the first group, in particular the impedance, are considered permissible.

[0043] The plasma state monitoring device may optionally store different areas in the storage device for different plasma processes.

[0044] In an advantageous embodiment, the plasma state monitoring device is designed to continuously detect the time-varying measured values ​​of the first group and the time-varying measured values ​​of the second group and to plot them in respective first and second diagrams.

[0045] In an advantageous embodiment, the plasma state monitoring device is designed to form a first group of time-varying measured values ​​and a second group of time-varying measured values ​​of the at least one measured variable from averaged individual measured values. Thus, the time-varying measured values ​​plotted in the first and second diagrams can also consist of average values ​​or contain average values.

[0046] In an advantageous extension scheme, the plasma state monitoring device is configured to detect the time-varying measurement values ​​of the third group and preferably the time-varying measurement values ​​of the fourth group. Then, the plasma state monitoring device can be further configured to display the third group in the third diagram and the fourth group in the fourth diagram. Preferably, the time-varying measurement values ​​of the third group and / or the fourth group are recorded at another measuring point different from the time-varying measurement values ​​of the first group and the second group. The time-varying measurement value of the third group can preferably be an impedance value. The time-varying measurement value of the fourth group can preferably be at least one measurement variable selected from the phase relationship between voltage, current and / or voltage and current. The third diagram can be a diagram without a time axis, in particular a Smith chart. The fourth diagram can include two axes, one of which is a time axis. Preferably, all the above statements made for the first group and the second group also apply to the third group, and in particular also to the fourth group.

[0047] The plasma system according to the invention comprises the plasma state monitoring device mentioned at the beginning. In addition, an impedance adaptation circuit, a high-frequency generator and at least one consumer, preferably in the form of a plasma chamber, are provided. The high-frequency generator is connected to the high-frequency input of the impedance adaptation circuit. The high-frequency output of the impedance adaptation circuit is connectable, in particular connected, to the at least one consumer. A first group of time-varying measured values ​​can be detected at the high-frequency input of the impedance adaptation circuit. A second group of time-varying measured values ​​of the at least one measurement variable can also be detected at the high-frequency input of the impedance adaptation circuit.

[0048] The method according to the present invention is used to monitor a plasma generation system by a plasma state monitoring device connected to an impedance adaptation circuit. Here, the plasma state monitoring device can be configured to implement the following method steps:

[0049] a) detecting a first set of time-varying measured values, wherein the first set of time-varying measured values ​​is associated with an impedance, the first set of time-varying measured values ​​being detectable at one of the terminals of the impedance adaptation circuit and recorded sequentially in time;

[0050] b) detecting a second set of time-varying measured values ​​of at least one measurement variable, wherein the at least one measurement variable is selected from:

[0051] i) voltage;

[0052] ii) electric current;

[0053] iii) the phase relationship between voltage and current;

[0054] Therein, the time-varying measured values ​​of the corresponding measurement parameters are recorded successively in time;

[0055] c) displaying the first group in a first diagram, wherein the first diagram is a diagram without a time axis, in particular a Smith chart, and displaying the second group in a second diagram, wherein the second diagram comprises two axes, one of which is a time axis, wherein time-varying measured values ​​of the first group and time-varying measured values ​​of corresponding measured variables of the second group are detected in at least partly the same time period, thereby enabling state monitoring of the plasma generation system. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Different embodiments of the present invention are described below with reference to the accompanying drawings. The same objects have the same reference numerals. The corresponding figures of the accompanying drawings specifically show:

[0057] Figure 1 : An embodiment of a plasma generation system, the plasma generation system comprising an HF generator, an impedance adaptation circuit, a plasma state monitoring device and a plasma chamber;

[0058] Figure 2A , 2B : Two different embodiments of the impedance matching circuit;

[0059] Figure 3 : Embodiment of the measurement unit;

[0060] Figure 4 : display of first and second graphical representations with time-varying measured values;

[0061] Figure 5 : From Figure 4 , wherein in the second representation another time-varying measured value of at least one measured variable is selected;

[0062] Figure 6 : Display of first and second illustrations, wherein an area is drawn in the first illustration;

[0063] Figure 7 : From Figure 6 a display of, wherein a first set of multiple time-varying measurements are located outside the region;

[0064] Figure 8 : A flow chart describing a method for monitoring a plasma generating system;

[0065] Fig. 9 : An embodiment of a control unit, such as a plasma state monitoring device. DETAILED DESCRIPTION

[0066] Figure 1 A plasma generation system 100 is shown, which is used, in particular, for surface treatment of workpieces. In addition to treating surfaces by means of plasma processes, the plasma generation system 100 can also be used in semiconductor manufacturing processes or for gas lasers (e.g., CO 2 Laser excitation of laser).

[0067] The plasma generation system 100 comprises a plasma state monitoring device 1, an impedance adaptation circuit 50, an HF generator 60 and a plasma chamber 70 (consumer). The HF generator 60 is electrically connected to the impedance adaptation circuit 50. This is achieved by a cable connection 2a, which is preferably a first cable connection 2a, in particular at least one first coaxial cable 2a. The first cable connection 2a is connected to an output terminal 60a of the HF generator 60 and an input terminal 50a of the impedance adaptation circuit 50. The impedance adaptation circuit 50 is also electrically connected to the plasma chamber 70. This is preferably achieved via another, in particular second cable connection 2b, which is preferably a second coaxial cable 2b. The impedance adaptation circuit 50 is usually arranged close to the plasma chamber 70, in particular at a spacing of 10 cm or less than 10 cm, preferably directly on the plasma chamber, so that the second cable connection 2b is also configured to be correspondingly short and has only a small number of mechanical components, for example, a plug and / or a line connector. The second cable connection part 2b is connected to the output terminal 50b of the impedance matching circuit 50 and to the input end of the plasma chamber 70. Preferably, the second cable connection part 2b is connected to an electrode inside the plasma chamber 70.

[0068] The first cable connection portion 2a is longer than the second cable connection portion 2b. Preferably, the length of the first cable connection portion 2a is 2, 3, 4, 5, 6, 7 or at least 8 times that of the second cable connection portion 2b.

[0069] The plasma generation system 100 preferably comprises an output device 80, which is preferably a screen. An input unit 9 is also provided. The input unit 9 is suitable for moving a cursor or a marker on the output device 80 in a targeted manner. The input unit 9 can be, for example, a keyboard and / or a mouse. A touch-sensitive screen can also be considered as an input unit 9.

[0070] The plasma chamber 70 can be regarded as a consumer (load). Depending on the application, one or more electrodes 3 can be arranged in the plasma chamber 70, at least one of which is connected to the second cable connection 2b. Figure 1 In FIG. 7 , the plasma 4 is shown in dot form within the plasma chamber 70 .

[0071] Preferably, the plasma generation system 100 also includes an optical device 90. Further preferably, the optical device 90 is arranged in the plasma chamber 70 and is configured for visually detecting the plasma 4 and thus the plasma state. The optical device 90 can be, for example, a light conductor, such as a glass fiber. Although a camera device can be used, it is often omitted for cost reasons. In addition, the plasma 4 may quickly blur lenses and other protective glass.

[0072] The plasma state monitoring device 1 is explained in detail below. The plasma state monitoring device 1 is preferably at least one processor (eg, a microcontroller) and / or a programmable logic module, such as an FPGA (Field Programmable Gate Array).

[0073] In one embodiment, the plasma state monitoring device 1 may be used, for example, to control the impedance adaptation circuit 50. Thus, the plasma state monitoring device 1 may be configured to control the impedance adaptation circuit 50 so that the impedance adaptation circuit sets a certain impedance target value.

[0074] exist Figure 1 , the input terminal 50a of the impedance adaptation circuit 50 is drawn directly on the housing of the impedance adaptation circuit 50. In principle, the input terminal can also be located at the end of the first cable connection 2a at which the first cable connection 2a is connected to the HF generator 60. As a result, the cable impedance of the first cable connection 2a is also taken into account.

[0075] According to the present invention, the plasma state monitoring device 1 is used to detect a first set of time-varying measurement values ​​30, wherein the first set of time-varying measurement values ​​30 is associated with an impedance that can be detected at an input terminal 50a of an impedance adaptation circuit 50 or an output terminal 50b of the impedance adaptation circuit 50. In addition, the plasma state monitoring device 1 can be used to detect a second set of time-varying measurement values ​​31 of at least one measurement parameter, wherein the at least one measurement parameter is selected from: a voltage 32, a current 33, and a phase relationship 34 between the voltage 32 and the current 33. As will be described later from Figure 4 As explained in detail at the beginning, the plasma state monitoring device 1 can also be configured to display the first group in a first diagram 35, wherein the first diagram 35 can preferably be a Smith chart. The plasma state monitoring device 1 can also be configured to display the second group in a second diagram 36, wherein the second diagram 36 in particular includes two axes 36a, 36b, wherein one axis 36b can preferably be a time axis.

[0076] The plasma state monitoring device 1 comprises at least one measuring unit 5 . The time-varying measured value 31 of the at least one measured variable 32 , 33 , 34 of the second group can be measured by the at least one measuring unit 5 .

[0077] The at least one measuring unit 5 is preferably arranged between the first cable connection 2a and the impedance adaptation circuit 50. In this case, a further measuring unit 6 is arranged between the impedance adaptation circuit 50 and the load 70.

[0078] Figure 2A , 2B Different embodiments of the impedance matching circuit 50 are shown. Figure 2A In FIG. 5 , the impedance matching circuit 50 is L-shaped. Figure 2B In the embodiment, the impedance adaptation circuit 50 is T-shaped.

[0079] exist Figure 2AIn the embodiment, the input terminal 50a of the impedance adaptation circuit 50 is connected to the first coil 10 (first inductor) and to the second coil 11 (second inductor). The first coil and the second coil 10, 11 are connected to a common node with their first terminals and are therefore connected to the input terminal 50a of the impedance adaptation circuit 50. The first coil 10 is connected to the reference ground via the first capacitor 12 (first capacitance). The second coil 11 is connected to the output terminal 50b via the second capacitor 13 (second capacitance). The first capacitor and the second capacitor 12, 13 are adjustable components, especially adjustable elements in the form of variable capacitors, and their capacitance can be changed via a stepper motor. Alternatively, a solid-state switch can be used so that the capacitance can be connected and disconnected as quickly as possible. In particular, the plate spacing of the first capacitor and the second capacitor 12, 13 can be changed. In one embodiment, the plasma state monitoring device 1 can be configured to control the corresponding stepper motor accordingly. In principle, the control device can perform the control. The capacitances of the first and second capacitors 12, 13 can be adjusted independently of each other. Preferably, the impedance adaptation circuit 50 has no other components. Of course, the positions of the first coil 10 and the first capacitor 12 can also be interchanged. In this case, the first capacitor 12 is arranged at the input terminal 50a of the impedance matching circuit 50, and the first coil 10 is arranged at the reference ground. Complementarily or alternatively, the positions of the second coil 11 and the second capacitor 13 can also be interchanged. In this case, the second capacitor 13 is arranged at the input terminal 50a of the impedance matching circuit 50, and the second coil 11 is arranged at the reference ground.

[0080] exist Figure 2B , the input terminal 50a of the impedance adaptation circuit 50 is connected to the first capacitor 12 (first capacitance). The first capacitor 12 is connected not only to the first coil 10 (first inductor) but also to the second coil 11 (second inductor). This is achieved by the first capacitor 12 and the common node connected to the first coil and the second coil 10, 11. The first coil 10 is also connected to the reference ground. The second coil 11 is connected (connected in series) to the second capacitor 13 (second capacitance). The second capacitor 13 is connected to the output terminal 50b of the impedance adaptation circuit 50. The positions of the second coil 11 and the second capacitor 13 can also be interchanged. In this case, the second capacitor 13 will be connected to the common node and the second coil 11 will be connected to the output terminal 50b of the impedance adaptation circuit 50. Preferably, the impedance adaptation circuit 50 does not have other components.

[0081] Figure 3 An exemplary embodiment of a possible design of the measuring unit 5 and / or the further measuring unit 6 is shown. In this exemplary embodiment, the measuring units 5 , 6 are designed for contactless measurement of voltage and contactless measurement of current.

[0082] For this purpose, the respective measuring unit 5 , 6 comprises a current sensor 15 and a voltage sensor 16 .

[0083] However, it is preferred to also measure the phase relationship between current and voltage so that the impedance can be calculated and so that the first set of time-varying measured values ​​30 can be calculated.

[0084] The current sensor 15 of the measuring unit 5 and / or of the further measuring unit 6 is designed as a coil, in particular as a Rogowski coil.

[0085] The two ends of the coil are preferably connected to one another via a shunt resistor 17. The voltage dropped across the shunt resistor 17 can be digitized by means of a first A / D converter 18. The first A / D converter 18 can be part of a digitization device.

[0086] The voltage sensor 16 of the measuring unit 5 and / or the further measuring unit 6 is preferably configured as a capacitive voltage divider. The first capacitor 19 is formed by a conductive ring 19. A conductive cylinder can also be used. The corresponding first cable connection and / or second cable connection 2a, 2b passes through the conductive ring 19. The second capacitor 20 of the voltage sensor 16 configured as a voltage divider is connected to the reference ground. Connected in parallel with the second capacitor 20 is a second A / D converter 21, which is configured to detect the voltage dropped on the second capacitor 20 and digitize it. The second A / D converter 21 can be part of a digitizing device.

[0087] In principle, the measuring unit 5 and the further measuring unit 6 can also be arranged or constructed on a (common) circuit board. The first capacitor 19 can be formed by a coating on a first side and an opposite second side of the circuit board. In this case, the coating on the first side and the second side is electrically connected to each other via plated through holes. The first cable connection and / or the second cable connection 2a, 2b pass through an opening in the circuit board. The second capacitor 20 can be formed by discrete components.

[0088] The current sensor 15 in the form of a coil, in particular in the form of a Rogowski coil, is spaced further from the first cable connection 2a, 2b than the first capacitor 19. The coils can also be formed on the same circuit board by corresponding coatings and plated-through holes. The coil for current measurement and the first capacitor for voltage measurement preferably extend through a common plane.

[0089] The shunt resistor 17 can also be arranged on the circuit board. The same applies to the first and / or second A / D converter (analog / digital converter) 18 , 21 .

[0090] The measuring unit 5 and / or the further measuring unit 6 can also be designed as a directional coupler.

[0091] Figure 4 A first representation 35 and a second representation 36 are shown for the measuring unit 5. The measuring unit 5 is preferably arranged at the input terminal 50a of the impedance adaptation circuit 50. In the case of using another measuring unit 6 which is preferably arranged at the output terminal 50b of the impedance adaptation circuit 50, the first representation 35 and the second representation 36 for the other measuring unit 6 can be selected via the corresponding tabs.

[0092] As explained, the voltage 32 and the current 33 can be measured by the measuring unit 5. The plasma state monitoring device 1 is configured to determine the phase relationship 34 between the voltage 32 and the current 33 from the voltage 32 and in the current 33. Preferably, a complex value related to the complex impedance can be determined. This involves the corresponding measurement variable of the second group of time-varying measurement values ​​31. The measuring unit 5 is configured to measure a plurality of time-varying measurement values ​​31 of the voltage 32 in sequence. The plurality of time-varying measurement values ​​31 of the voltage 32 are plotted in the second diagram 36. The second axis 36b is a time axis for representing one thousand successively recorded time-varying measurement values ​​31 of the corresponding measurement variable of the second group. The corresponding values ​​of the corresponding measurement variables are displayed on the first axis 36a. In principle, different measurement variables (i.e., the voltage 32, the current 33 and the phase relationship 34) can be normalized. In the diagram shown Figure 4 In FIG. 3 , the voltage 32 of 200 V and the current 33 of 7 A are located at the same point on the first axis 36 a.

[0093] In particular, the plasma state monitoring device 1 is designed to continuously detect the second set of time-varying measured values ​​31 via the measuring unit 5. The displayed measured value 31 of the voltage 32 can include, for example, a plurality of average voltage values. The same applies to the current 33 and the phase relationship 34.

[0094] The plasma state monitoring device 1 is also preferably designed to plot each newly detected or newly averaged measured value 31 of the corresponding measured variable of the second group in the second diagram 36. It is also possible to plot new time-varying measured values ​​31 of the corresponding measured variable of the second group in the second diagram 36 if there are a certain number of, for example, one thousand measured values ​​31 of the corresponding measured variable.

[0095] The plasma state monitoring device 1 is also designed to calculate the first group of time-varying measured values ​​30 from the second group of time-varying measured values ​​31. Therefore, the impedance can be calculated from the (complex) voltage 32 and the (complex) current 33. It goes without saying that only the voltage 32 and current 33 values ​​determined by the measuring unit 5 in the same time period are settled with each other. Here, the plasma state monitoring device 1 is designed to plot the first group of time-varying measured values ​​30 in a first diagram 35.

[0096] The number of time-varying measured values ​​30 of the first group plotted in the first diagram 35 is preferably the same as the number of time-varying measured values ​​31 of the corresponding measured variable of the second group plotted in the second diagram 36. Thus, in the exemplary embodiment shown, there are preferably one thousand time-varying measured values ​​30 of the first group and one thousand time-varying measured values ​​31 of the voltage 32, the current 33 and the phase relationship 34. After the first diagram 35 and the second diagram 36 are displayed together on the output device 80, the user can very easily establish the relationship between the displayed impedance and the displayed curves of the voltage 32, the current 33 and the phase relationship 34.

[0097] Preferably, the plasma state monitoring device 1 further comprises a storage device 8 in which the time-varying measured values ​​30 of the first group and / or the time-varying measured values ​​31 of the corresponding measured variable of the second group can be stored.

[0098] Preferably, the plasma state monitoring device 1 is configured to receive a trigger signal. Such a trigger signal may be an edge of a pulse signal of the HF generator 60. After detecting such a trigger signal, a predetermined number of time-varying measured values ​​30 of the first group and time-varying measured values ​​31 of the corresponding measured variable of the second group are detected and displayed on the output device 80 in the first and second diagrams 35 and 36.

[0099] exist Figure 4 It is also shown in FIG. 1 that the plasma state monitoring device 1 is configured to plot at least some or all of the time-varying measurement values ​​30 of the first group in different representations in the first diagram 35. Preferably, the different representations are different colors. It can also be different hatching. The representation reflects the time point at which the time-varying measurement value 31 of the first group is detected. Figure 4 , a first set of older time-varying measurement values ​​31 are displayed brighter than a first set of newer time-varying measurement values ​​31.

[0100] exist Figure 4 In the diagram 35, a first legend 37 is preferably also shown, which is drawn into the second diagram 36. The first legend 37 is shown along the second axis 36b and contains an overview of the representation. The first legend 37 thus changes from light to dark along the second axis 36b (time axis). As a result, it is particularly easy to assign the corresponding time-varying measured values ​​30 of the first group in the first diagram 35 to the time-varying measured values ​​31 of the corresponding measured variable of the second group in the second diagram 36. The user can immediately see which time-varying measured value 30 of the first group corresponds to which time-varying measured value 31 of the second group.

[0101] Preferably, Figure 4A second legend 38 is also shown in the figure, which shows the different representations and provides information about which time-varying measurement values ​​31 of the first group relate to these representations. In this case, the brightest representation is for the oldest one hundred time-varying measurement values ​​31. In this case, the darkest representation is for the latest one hundred time-varying measurement values ​​31.

[0102] The plasma state monitoring device 1 is also designed to determine, by means of the input unit 9, which time-varying measured values ​​30, 31 of the first or second group in the first or second representation 35, 36 the user has selected. Figure 4 In FIG. 3 , a pointer 39, in particular a mouse pointer 39, is shown. The pointer 39 can be moved by the user. This can be achieved by means of the input unit 9. Figure 4 , the user clicks on the second illustration 36, for example. The plasma state monitoring device 1 is constructed here to draw a cursor 40 and / or a marking line 41, wherein the marking line 41 is placed on the corresponding measurement variable. In this case, a time point is marked by the cursor 40 and the marking line 41, at which time point approximately the third hundredth time-varying measurement value 31 of the second group is displayed. Through the marking line 41, the corresponding measurement variable of the time-varying measurement value 31 of the second group is visually highlighted. The marking line 41 preferably runs parallel to the first axis 36a. It is also conceivable that the measurement variable (voltage 32, current 33 and / or phase relationship 34) at the position of the cursor 40 is enlarged and / or displayed in other colors in the second illustration 36.

[0103] At the same time, the plasma state monitoring device 1 is configured to visually highlight the time-varying measurement values ​​30 of the first group that are plotted in the first diagram 35 and detected within the same time period as the selected time-varying measurement values ​​31 of the second group. Figure 4 In FIG. 3 , the corresponding time-varying measured values ​​30 are highlighted by a border.

[0104] In principle, it is also possible that the user clicks on the first illustration 35 and selects one of the plotted time-varying measured values ​​30 therein. The plasma state monitoring device 1 is then configured to visually highlight the measurement variable of the time-varying measured value 31 corresponding thereto in the second illustration 36. This can be achieved, for example, by moving or adding a marking line 41. In addition or alternatively, the cursor 40 can also be moved or added to the corresponding position on the time axis (second axis 36b). In addition or alternatively, the corresponding measurement variable can also be displayed in the second illustration 36 in an enlarged manner and / or in another color.

[0105] exist Figure 5 , the user marks other time-varying measured values ​​31 of the measured variables voltage 32, current 33 and phase relationship 34. This can be done by moving Figure 4Thus, the user can, for example, click and move the cursor 40 and / or the marking line 41 along the time axis (second axis 36b). Such movement is achieved by Figure 4 36b). The other time-varying measured values ​​31, 30 in the second and first illustrations 36, 35 can also be selected by clicking on other time points in the second illustration 36. The plasma state monitoring device 1 is configured to visually highlight another time-varying measured value 30 of the first group in the first illustration 30. The other time-varying measured value 30 is recorded in the same time period as the corresponding selected time-varying measured value 31 in the second illustration 36.

[0106] exist Figure 6 , the plasma state monitoring device 1 is configured to draw a region 42 into the first illustration 35. The drawing of the region 42 can be achieved by moving the mouse. The corresponding corner point can be set by clicking, for example. The region 42 can also be loaded from the storage device 8. Depending on the plasma process, different regions 42 can be defined. The impedance located in the region 42 is considered as the allowed impedance.

[0107] The plasma state monitoring device 1 is designed to visually highlight the first group of time-varying measured values ​​30 located outside the region 42 in the first illustration 35 . Figure 7 This situation is shown in FIG. This visual highlighting can be achieved by selecting a different color, size and / or border for the time-varying measurement values ​​30 of the first group that are located outside the area 42. It is also possible to draw an additional area 43 in which the time-varying measurement values ​​30 of the first group that are located outside the area 42 are drawn. Here, there can be one or more such additional areas 43.

[0108] In this context, the plasma state monitoring device 1 is also designed to visually highlight in the second illustration 36 the time-varying measured values ​​31 of the corresponding measured variable of the second group, which were recorded in the same time period as the time-varying measured values ​​30 of the first group located outside the region 42 in the first illustration 35. Figure 7 In the diagram, this visual highlighting is achieved by a corresponding bar 44. The bar 44 extends parallel to the second axis 36b (time axis), more precisely, over the area in which the following time-varying measured values ​​31 of the second group are located, whose corresponding time-varying measured values ​​30 of the first group are located outside the area 42. In this case, there can be one or more such bars 44.

[0109] The plasma state monitoring device 1 can also be configured to store the time-varying measured values ​​30 of the first group or all the time-varying measured values ​​30 of the first group recorded within a certain time window in the storage device 8, for the case where the time-varying measured values ​​30 of the first group are located outside the region 42. In this context, the time-varying measured values ​​31 of the at least one measured variable of the second group are preferably also stored in the storage device 8.

[0110] Preferably, the plasma state monitoring device 1 is also configured to output a warning message 45. In this case, it is a visual warning message on the output device 80. In addition or alternatively, an acoustic warning message may also be present. The plasma state monitoring device 1 may also be configured to shut down the HF generator 60 or to influence, in particular reduce, its output power.

[0111] Figure 8 A flow chart describing a method for monitoring a plasma generation system 100 by means of a plasma state monitoring device 1 is shown. In a first method step S 1 In the second method step S, a first set of time-varying measured values ​​30 is detected, wherein the first set of time-varying measured values ​​30 is associated with the impedance and can be detected at the input terminal 50a or the output terminal 50b of the impedance adaptation circuit 50 and recorded in time. 2 In the third method step S, a second set of time-varying measured values ​​31 of at least one measured variable (voltage 32, current 33 and phase relationship 34) is detected, wherein the time-varying measured values ​​31 of the corresponding measured variables are recorded successively in time. 3 1 , the first group is shown in a first diagram, wherein the first diagram 35 is a diagram without a time axis, in particular a Smith chart. The second group is shown in a second diagram 36, wherein the second diagram 36 comprises two axes 36a, 36b, one of which 36b is a time axis. The time-varying measured values ​​30 of the first group and the time-varying measured values ​​31 of the corresponding measured variable of the second group are detected in at least partly the same time period. As a result, the user can monitor the state of the plasma generation system 100 particularly well.

[0112] Fig. 9 A schematic diagram of one embodiment of a control unit 600 (hereinafter referred to as a "control system" 600) is shown, which is suitable for executing instructions for implementing one or more aspects of the method in the device of the present invention. For example, the control system 600 can be used to implement the above method and / or the plasma state monitoring device 1 according to the present invention and / or the above description. Fig. 9The components shown in the figure should be understood as examples and do not limit the scope of application or functionality of hardware, software, firmware, embedded logic components, or a combination of multiple such components for implementing a specific embodiment of the present invention. Some or all of the components shown may be part of the control system 600.

[0113] In this embodiment, the control system 600 includes at least one processor 601, such as a central processing unit (CPU, DSP) or a programmable logic module (PLD, FPGA). The control system 600 may also include a memory 603 and a data storage 608, which communicate with each other and with other components via a bus 640. The bus 640 may also connect an indicator / display 632, one or more input devices 633, one or more output devices 634, one or more storage devices 635, and various storage media 636 to each other, and to one or more devices of the processor 601, the memory 603, and the data storage 608. All of these elements may be coupled to the bus 640 directly, or may be coupled to the bus 640 through one or more interfaces 622, 623, 624, 625, 626, or adapters.

[0114] The control system 600 may have any suitable physical form, including but not limited to one or more integrated circuits (ICs), circuit boards (PCBs), mobile handheld devices, laptop computers (Laptop-Computers) or notebook computers (Notebook-computers), distributed computer systems, computing grids, or servers. The processor 601 or central processing unit (CPU) may include a cache storage unit 602 for temporarily storing commands, data, or processor addresses locally. The processor 601 is configured to support the execution of instructions stored on at least one storage medium.

[0115] The memories 603 and 608 may have various components, including but not limited to direct access storage components (e.g., RAM 604, especially static RAM "SRAM", dynamic RAM "DRAM", etc.), read-only components (e.g., ROM 605), and any combination thereof. The ROM 605 may also function as a one-way communication of data and instructions to the one or more processors 601, and the RAM 604 may also function as a two-way communication of data and instructions to the one or more processors 601.

[0116] The storage device 8 may be designed as part of such a memory 603 , 608 or as such a memory.

[0117] The hard disk storage 608 is selectively connected to one or more processors 601 bidirectionally through the memory control unit 607. The hard disk storage 608 provides additional storage capacity. The memory 608 can be used to store the operating system 609, the program 610, the data 611, the application 612, the application program, etc. Usually (but not always), the memory 608 is a secondary storage medium (such as a hard disk) that is slower than the main memory (for example, the memory 603). The memory 608 can also include, for example, a magnetic storage device, an optical storage device, a transistorized storage device, a solid-state storage device (for example, a flash memory-based system) or a combination of any of the above elements. Where appropriate, the information storage 608 can be integrated into the memory 603 as a virtual memory.

[0118] The bus 640 connects multiple subsystems. The bus 640 can be any one of a variety of bus structure types, such as a memory bus, a memory controller, a peripheral bus, a local bus, and all combinations of these when using a variety of bus architectures. Information and data can also be displayed through a display 632. Examples of the display 632 include, but are not limited to, a liquid crystal display (LCD), an organic liquid crystal display (OLED), a cathode ray tube (CRT), a plasma display, and any combination thereof. The display 632 can be connected to the processor 601, the memory 603, 608, the input device 633, and other devices through the bus 640.

[0119] Output device 80 may be configured as part of display 632 or as such a display.

[0120] The bus 640 can connect all the above-mentioned components to an external network (e.g., cloud 630) via a network interface 620. It can be, for example, a local area network (LAN), a wireless local area network (WLAN), etc. It can establish connections to other storage media, servers, printers, display devices. It can have access to telecommunications equipment and the Internet. The bus 640 can connect all the above-mentioned components to a graphics controller 621 and a graphics interface 622, which can be connected to at least one input device 633.

[0121] The bus 640 may connect all the above-mentioned components with the input interface 623, which may be connected with at least one input device 633. The input device may include, for example, a keypad, a keyboard, a mouse, a pen, a touch screen, and the like.

[0122] The input unit 9 can be designed as a part of the input device 633 or as such an input device.

[0123] The bus 640 can connect all the above-mentioned components to the output interface 624, which can be connected to at least one output device 634. The output device 634 can include a light-emitting display, an LED display, a display screen (such as LCD, OLED, etc.) or have an interface to these devices.

[0124] The bus 640 can connect all the above-mentioned components with a memory access interface 625, which can be connected to at least one storage device 635. The bus 640 can connect all the above-mentioned components with another memory access interface 626, which is connected to at least one storage medium 636. The storage device 635 or the storage medium 636 can include, for example, a solid-state memory, a magnetic memory or an optical memory, in particular a non-volatile memory. The storage medium can be separated from the control system during operation of the control system without losing data.

[0125] The display 632, input device 633, output device 634, storage device 635, storage medium 636 may be arranged outside the control system 600 or integrated therein, respectively. They may also be connected to the control system 600 via a connection to the Internet or other network interfaces.

[0126] The invention is not limited to the described exemplary embodiments. Within the scope of the invention, all described and / or illustrated features can be combined with one another as desired.

Claims

1. A plasma state monitoring device (1) for connection to an impedance adaptation circuit (50) for a plasma generation system (100), wherein: The plasma state monitoring device (1) is constructed as follows: a) for detecting a first set of time-varying measured values ​​(30), wherein the first set of time-varying measured values ​​(30) are associated with an impedance, the first set of time-varying measured values ​​being detectable at one of the terminals (50a, 50b) of the impedance adaptation circuit (50) and recorded sequentially in time; b) a second set of time-varying measured values ​​(31) for detecting at least one measured variable, wherein the at least one measured variable is selected from: i) voltage (32); ii) electric current (33); iii) the phase relationship (34) between the voltage (32) and the current (33); In this case, the time-varying measured values ​​(31) of the corresponding measured variables are recorded successively in time; c) for displaying the first group in a first diagram (35), wherein the first diagram (35) is a diagram without a time axis, in particular a Smith chart, and for displaying the second group in a second diagram (36), wherein the second diagram (36) comprises two axes (36a, 36b), one of which (36b) is a time axis, wherein the time-varying measured values ​​(30) of the first group and the time-varying measured values ​​(31) of the corresponding measured variable of the second group are detected in at least part of the same time period, thereby enabling state monitoring of the plasma generation system (100).

2. The plasma state monitoring device (1) according to claim 1, characterized in that: It has the following characteristics: - provided with an output device (80); The plasma state monitoring device (1) is designed to display the first representation (35) and the second representation (36) simultaneously, in particular simultaneously on the same output device (80).

3. The plasma state monitoring device (1) according to claim 1 or 2, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is configured to detect a first set of time-varying measured values ​​(30) and a second set of time-varying measured values ​​(31) of the at least one measured variable at a measuring point within the plasma generation system (100).

4. The plasma state monitoring device (1) according to claim 3, characterized in that: It has the following characteristics: - the measuring point can be arranged in the region of an input terminal (50a) of the impedance adaptation circuit (50); or The measuring point can be arranged in the region of an output terminal (50b) of the impedance adaptation circuit (50).

5. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: - provided with a measuring unit (5); The measuring unit (5) is designed to measure a second set of time-varying measured values ​​(31) in the form of at least one measured variable, in particular a plurality of measured variables, of the measured variables; The plasma state monitoring device (1) is designed in particular to calculate a first set of time-varying measured values ​​(30) from the measured time-varying measured values ​​(31) of the at least one measured variable of the second set.

6. The plasma state monitoring device (1) according to claim 5, characterized in that: It has the following characteristics: The measuring unit (5) is designed to measure a second set of time-varying measured values ​​(31) in the form of measured variables voltage (32) and current (33); The plasma state monitoring device (1) is particularly designed to calculate the phase relationship (34) from the voltage (32) and the current (33).

7. The plasma state monitoring device (1) according to claim 5 or 6, characterized in that: It has the following characteristics: - the measuring unit (5) comprises a directional coupler; or - The measuring unit (5) comprises a current sensor (15) and a voltage sensor (16).

8. The plasma state monitoring device (1) according to any one of the preceding claims 5 to 7, characterized in that: It has the following characteristics: The measuring unit comprises a digitizing device, which is configured to digitize the second set of time-varying measured values ​​(31), wherein the digitizing device has a sampling rate greater than 50 kHz, 500 kHz, 2 MHz, 5 MHz, 50 MHz or greater than 100 MHz.

9. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: A storage device (8) is provided, wherein the digitizing device is designed to store a second set of digitized time-varying measured values ​​(31) in the storage device (8).

10. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The plasma state monitoring device (1) is designed to receive a trigger signal, in particular a trigger signal in the form of a pulse signal of a high-frequency generator (60), and to detect a first set of time-varying measured values ​​(30) and a second set of time-varying measured values ​​(31) of at least one measured variable when the trigger signal is present.

11. The plasma state monitoring device (1) according to claim 10, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to detect a first set of a certain number of measured values ​​(30) and a second set of a certain number of measured values ​​(31) each time a trigger signal is received and to plot them in respective first and second diagrams (35, 36).

12. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The number of time-varying measured values ​​(30) of the first group corresponds to the number of time-varying measured values ​​(31) of the corresponding measured variable of the second group or deviates therefrom by at most 10%.

13. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The plasma state monitoring device (1) is configured to plot at least some or all of the time-varying measurement values ​​(30) of the first group in the first diagram (35) in different representation forms, in particular colors, wherein the representation forms reflect the time points at which the time-varying measurement values ​​(30) of the first group are detected.

14. The plasma state monitoring device (1) according to claim 13, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to plot the first group of time-varying measured values ​​(30) in the first diagram (35) using a representation curve, in particular a color curve, wherein the representation curve is selected such that: a) causing earlier detected time-varying measurement values ​​(30) of a first group to be displayed darker and causing later detected time-varying measurement values ​​(30) of said first group to be displayed brighter; or b) causing the time-varying measurement values ​​(30) of the first group detected earlier to be displayed brighter, and causing the time-varying measurement values ​​(30) of the first group detected later to be displayed darker.

15. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: - a first axis (36a) of the second diagram (36) is a measured value axis and a second axis (36b) of the second diagram is a time axis.

16. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: An input unit (9) is provided, wherein the input unit (9) is designed to detect a user input.

17. The plasma state monitoring device (1) according to claim 16, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is configured to determine, by means of the input unit (9), which time-varying measured value (30, 31) in the first or second representation (35, 36) is selected by a user; The plasma state monitoring device (1) is configured to visually highlight in another representation (36, 35) time-varying measurement values ​​(31, 30) detected within the same time period as the selected time-varying measurement value (30, 31).

18. The plasma state monitoring device (1) according to claim 16 or 17, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to determine which time-varying measured value of a first group of plotted time-varying measured values ​​(30) has been selected by the user via the input unit (9) in a first representation (35).

19. The plasma state monitoring device (1) according to claim 17 or 18, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to visually highlight the first group of selected time-varying measured values ​​(30) in the first representation (35), in particular by displaying them in an enlarged manner and / or by displaying them with a frame.

20. The plasma state monitoring device (1) according to any one of claims 17 to 19, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to visually highlight time-varying measured values ​​(31) of the corresponding measured variable of the second group, which are plotted in the second diagram (36) and detected in the same time period as the selected time-varying measured values ​​(30) of the first group.

21. The plasma state monitoring device (1) according to claim 20, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to visually highlight the time-varying measured values ​​(31) of the corresponding measured variables of the second group by: a) displaying the time-varying measurements in an enlarged manner and / or with a frame; and / or b) Marking lines (41) which are placed on the corresponding measured variables.

22. The plasma state monitoring device (1) according to any one of claims 16 to 21, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to determine which time-varying measured value of the plotted time-varying measured values ​​(31) of the corresponding measured variable of the second group has been selected by the user via the input unit (9) in the second representation (36).

23. The plasma state monitoring device (1) according to claim 22, characterized in that: It has the following characteristics: - The plasma state monitoring device (1) is configured to a) determining a movement of a marking line (41) and / or a cursor (40) along the time axis (36b) in the second diagram (36) by the user via the input unit (9); and / or b) determining a marking of a point or an area in the second diagram (36) by the user via the input unit (9); The plasma state monitoring device (1) thereby determines which time-varying measured value of the plotted time-varying measured values ​​(31) of the corresponding measured variable of the second group is selected.

24. The plasma state monitoring device (1) according to claim 22 or 23, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to visually highlight time-varying measured values ​​(30) of the first group, which are plotted in the first diagram (35) and which are detected within the same time period as the selected time-varying measured values ​​(31) of the at least one measured variable of the second group.

25. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The plasma state monitoring device (1) is configured to plot a region (42) in the first diagram (35); - the plasma state monitoring device (1) is designed to highlight in the first representation (35) a first group of time-varying measured values ​​(30) located outside the region (42); and / or - The plasma state monitoring device (1) is configured to visually highlight in the second representation (36) time-varying measurement values ​​(31) of the at least one measurement variable of the second group detected within the same time period as the time-varying measurement values ​​(30) of the first group located outside the area (42).

26. The plasma state monitoring device (1) according to claim 25, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to visually highlight the time-varying measured values ​​(31) of the at least one measured variable of the second group by: a) displaying these time-varying measurements in an enlarged manner and / or with a frame; b) displaying these time-varying measurements in different representation forms, in particular in colors; c) Adding a marker next to the corresponding time-varying measured value (31) of the corresponding measured variable of the second group.

27. The plasma state monitoring device (1) according to claim 25 or 26, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is designed to output an alarm if the first group of time-varying measured values ​​(30) is located outside the region (42) in the first representation (35).

28. The plasma state monitoring device (1) according to any one of claims 16, 25 to 27, characterized in that: It has the following characteristics: The plasma state monitoring device (1) is configured to define the area (42) by user input via the input unit (9).

29. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The plasma state monitoring device (1) is designed to continuously detect a first group of time-varying measured values ​​(30) and a second group of time-varying measured values ​​(31) and to plot them in respective first and second diagrams (35, 36).

30. The plasma state monitoring device (1) according to any one of the preceding claims, characterized in that It has the following characteristics: The plasma state monitoring device (1) is configured to detect a third group of time-varying measured values ​​and a fourth group of time-varying measured values, wherein the plasma state monitoring device (1) is further configured to display the third group in a third diagram and the fourth group in a fourth diagram.

31. A plasma generation system (100) having a plasma state monitoring device (1) according to any one of the preceding claims, characterized in that: It has the following characteristics: - provided with an impedance matching circuit (50); - a high-frequency generator (60) and in particular at least one consumer, preferably in the form of a plasma chamber (70); - the high-frequency generator (60) is connected to the high-frequency input end (50a) of the impedance matching circuit (50); - the high-frequency output (50b) of the impedance adaptation circuit (50) is connectable to, in particular already connected to, the at least one consumer; - detecting a first set of time-varying measurement values ​​(30) at the high frequency input (50a) of the impedance matching circuit (50); - detecting a second set of time-varying measured values ​​(31) of the at least one measured variable at the high-frequency input (50a) of the impedance adaptation circuit (50).

32. A method for monitoring a plasma generating system (100) by means of a plasma state monitoring device (1) for connection to an impedance adaptation circuit (50), wherein: The plasma state monitoring device (1) is configured to implement the following method steps: a) detecting (S1) a first set of time-varying measurement values ​​(30), wherein the first set of time-varying measurement values ​​(30) are associated with impedance, the first set of time-varying measurement values ​​being detectable at one of the terminals (50a, 50b) of the impedance adaptation circuit (50) and recorded sequentially in time; b) detecting (S2) a second set of time-varying measured values ​​(31) of at least one measured variable, wherein the at least one measured variable is selected from: i) voltage (32); ii) electric current (33); iii) the phase relationship (34) between the voltage (32) and the current (33); In this case, the time-varying measured values ​​(31) of the corresponding measured variables are recorded successively in time; c) displaying (S3) the first group in a first diagram, wherein the first diagram (35) is a diagram without a time axis, in particular a Smith chart, and displaying the second group in a second diagram (36), wherein the second diagram (36) comprises two axes (36a, 36b), one of which (36b) is a time axis, wherein the time-varying measured values ​​(30) of the first group and the time-varying measured values ​​(31) of the corresponding measured variable of the second group are detected in at least part of the same time period, thereby enabling state monitoring of the plasma generation system (100).

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