Semiconductor cleaning solution, preparation method and cleaning method of semiconductor structure

Abstract

The invention provides a semiconductor cleaning solution, a preparation method and a cleaning method of a semiconductor structure, and belongs to the technical field of semiconductor manufacturing. The cleaning liquid at least comprises a solvent; an active component; the general formula of the additive is # imgabs0 #; wherein R1, R2 and R3 are respectively one of methyl, ethyl or propyl; and the low temperature resistance of the cleaning solution is-10 DEG C to-22 DEG C. According to the semiconductor cleaning solution, the preparation method and the cleaning method of the semiconductor structure provided by the invention, the cleaning effect can be enhanced, cleaning can be carried out under a low-temperature condition, the material loss of a substrate or a film layer is reduced, the influence of the material loss on a semiconductor manufacturing process is avoided, and the yield of the semiconductor manufacturing process is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a semiconductor cleaning liquid, a preparation method and a cleaning method for a semiconductor structure. Background Art

[0002] In the semiconductor manufacturing process, cleaning is a crucial link, which runs through multiple process links in the entire manufacturing process. The purpose of cleaning is to remove impurities on the surface and inside of the semiconductor. These impurities may come from various pollution sources in the manufacturing process, such as particles, metals or organic matter. The presence of impurities will seriously affect the yield and electrical performance of the chip, and even cause the chip to be scrapped. Therefore, cleaning can not only improve the yield rate and ensure the process quality, but also prevent pollution and protect complex chips from damage.

[0003] During the cleaning process, the active components in the cleaning solution may cause material loss of the substrate or the film layer on the substrate. As the process node continues to decrease, the impact of material loss on subsequent processes becomes increasingly apparent. Currently, material loss can be reduced by diluting the cleaning solution or reducing the cleaning time, but this will also result in unsatisfactory cleaning results and reduce chip performance. Summary of the invention

[0004] In view of the shortcomings of the prior art mentioned above, the purpose of the present invention is to provide a semiconductor cleaning liquid, a preparation method and a cleaning method for a semiconductor structure, which can improve the hydrophilicity of the cleaning liquid and enhance the cleaning effect. The coordination effect of the anions and cations in the additives induces the binding of water molecules, that is, through electrostatic induction, it binds to water molecules, and can inhibit the formation of ice crystals under low temperature conditions, reduce material loss of the substrate or film layer, and avoid the influence of material loss on the semiconductor process. It can be used in various processes of semiconductor devices to improve the yield of the semiconductor process.

[0005] To achieve the above-mentioned and other related purposes, the present invention provides a semiconductor cleaning solution, comprising at least: Solvents; active ingredients; and The additive has the general formula ; Wherein, R1, R2 and R3 are each one of methyl, ethyl or propyl; the low temperature resistance of the cleaning solution is -10℃~-22℃.

[0006] In one embodiment of the present invention, the mass content of the additive in the cleaning liquid is greater than or equal to 5%.

[0007] In one embodiment of the present invention, the mass content of the additive in the cleaning liquid is 5% to 15%.

[0008] In one embodiment of the present invention, R1, R2 and R3 are each methyl.

[0009] In one embodiment of the present invention, the solvent includes at least one of an organic solvent or water, the organic solvent includes at least one of n-hexane, isopropanol, cyclohexanone, acetone or methanol, and the water is selected from distilled water, deionized water, high-purity water or ultrapure water.

[0010] In one embodiment of the present invention, the active component includes at least one of an acidic substance, an alkaline substance, an oxidizing substance or an organic substance.

[0011] The present invention also provides a method for preparing a semiconductor cleaning solution, comprising: Adding the active component to the solvent and mixing them evenly to obtain an active component solution with a preset mass content; and The additive is added into the active component solution with a preset mass content by graded mixing to obtain a cleaning solution.

[0012] In one embodiment of the present invention, the mass content of the additive in the cleaning solution is added in a gradient of 1% to 2% until a preset mass content is reached.

[0013] The present invention also provides a method for cleaning a semiconductor structure, using the above-mentioned cleaning solution to clean a substrate or a film layer at -10°C to -22°C.

[0014] In one embodiment of the present invention, the substrate or the film layer has zero loss during the cleaning process.

[0015] In summary, the present invention provides a semiconductor cleaning liquid, a preparation method and a cleaning method for semiconductor structures. The unexpected technical effect of the present application is that the additive has the dual properties of a surfactant and a hydrogen bond donor, which improves the hydrophilicity of the cleaning liquid and enhances the cleaning effect. The coordination effect of the anions and cations in the additive induces the binding of water molecules, that is, through the electrostatic induction effect, it binds to the water molecules, which can inhibit the generation of ice crystals under low temperature conditions, reduce the material loss of the substrate or film layer, avoid the influence of material loss on the semiconductor process, and improve the yield of the semiconductor process. It can improve the safety of the cleaning liquid, and also help protect the environment and improve the green production of enterprises. The type selection and mixing ratio setting of the cleaning liquid are highly free, which can meet the application of the cleaning liquid in different environments and improve the applicability of the cleaning liquid. It can ensure that the additive achieves a uniform mixing degree in the cleaning liquid, and at the same time achieve the low temperature performance of the cleaning liquid, thereby reducing the material loss of the substrate or film layer. The cleaning liquid can be applied to all links of the semiconductor process to obtain high-quality, high-performance and high-yield semiconductor devices.

[0016] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0018] Figure 1 This is a graph showing the relationship between the cleaning solution temperature and the etching rate of silicon oxide in the prior art.

[0019] Figure 2 This is a graph showing the relationship between the cleaning liquid temperature and the number of particles removed from the silicon oxide surface in the prior art.

[0020] Figure 3 The figure is a relationship diagram between the antifreeze content and the freezing point of the cleaning fluid in the prior art.

[0021] Figure 4 Schematic diagram and scanning tunneling microscope image of the combination of additives and water molecules in one embodiment.

[0022] Figure 5 It is a trend diagram of the effect of the change of the mass content of the additive on the low temperature resistance of the cleaning solution and the cleaning effect on the silicon oxide layer in one embodiment. DETAILED DESCRIPTION

[0023] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0024] It should be understood that the present invention can be implemented in different forms and should not be interpreted as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0025] The technical scheme of the present invention is further described in detail below in conjunction with the embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0026] See also Figures 1 to 3As shown in FIG. 1 , during the semiconductor manufacturing process, the substrate or film layer needs to be cleaned multiple times to remove impurities on the surface and inside of the substrate or film layer. However, the temperature of the cleaning solution often has a greater impact on the cleaning process. For example, when cleaning a silicon oxide layer, the cleaning solution used includes ammonium hydroxide, hydrogen peroxide, and water, and the mass ratio of ammonium hydroxide, hydrogen peroxide, and water is, for example, 1:1:20. Figure 1 It can be seen that the etching rate and temperature are linearly related: y=0.3187e 0.04x , y is the etching rate, x is the temperature, and the correlation coefficient R 2 is 0.9808, that is, as the temperature of the cleaning liquid increases, the etching rate of the cleaning liquid on the silicon oxide layer increases, so it is necessary to reduce the temperature of the cleaning liquid to reduce the etching of the silicon oxide layer. Figure 2 It can be seen that as the temperature of the cleaning solution decreases, the number of particles removed by etching will decrease, reducing the cleaning effect. Figure 3 It can be seen from the figure that when antifreeze agents, such as ethylene glycol, are added to the etching solution, the freezing point of the cleaning solution decreases as the content of the antifreeze agent increases. Therefore, how to reduce the loss of the cleaning solution to the material to be cleaned while ensuring the cleaning effect has become an urgent problem to be solved.

[0027] The present invention provides a semiconductor cleaning solution, which at least includes a solvent, an active component and an additive, etc. The solution is used to dissolve and disperse the active component, the active component is used to improve the cleaning effect on the substrate or the film layer, and the additive has the dual properties of a surfactant and a hydrogen bond donor, which enhances the cleaning effect and can inhibit the generation of ice crystals under low temperature conditions, reduce the material loss of the substrate or the film layer, and improve the yield of the semiconductor process.

[0028] In one embodiment of the present invention, the solvent includes at least one of an organic solvent or water, and the organic solvent includes at least one of n-hexane, isopropanol, cyclohexanone, acetone or methanol, etc., which is suitable for cleaning the surface of the semiconductor substrate or film layer to remove possible grease, organic pollutant residues, stearic acid and organic impurities. Water is selected from distilled water, deionized water, high-purity water or ultrapure water, etc., and is suitable for various cleaning processes in the semiconductor process. In the present invention, the specific type of solvent is not limited, and it is selected according to the cleaning process. In this embodiment, for example, the cleaning of the silicon oxide layer is used as an example for explanation, and the solvent is, for example, high-purity water.

[0029] In one embodiment of the present invention, the active component includes at least one of an acidic substance, an alkaline substance, an oxidizing substance or an organic substance, the acidic substance includes at least one of hydrofluoric acid, nitric acid, sulfuric acid or citric acid, the alkaline substance includes at least one of sodium hydroxide, ammonium hydroxide or potassium hydroxide, the organic substance is at least one of isopropanol, xylene or acetone, and the oxidizing substance includes at least one of hydrogen peroxide or ozone. In other embodiments, the active component may also be selected from other materials according to different cleaning processes, and this application does not make specific restrictions. Among them, the mass content of the active component in the cleaning solution is, for example, 1% to 70%, which is selected according to the cleaning material, the cleaning process and the cleaning difficulty. In this embodiment, when cleaning the silicon oxide layer, the active component includes, for example, ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2), wherein the mass content of ammonium hydroxide in the cleaning solution is, for example, 5% to 8%, and the mass content of hydrogen peroxide in the cleaning solution is, for example, 10% to 16%. H2O2 acts on silicon oxide to form chemical oxide, and then NH4OH slowly corrodes this chemically grown oxide to remove particles. The two work together to effectively remove particles and contaminants on the surface of silicon oxide, ensuring the purity and performance of semiconductor devices. The increase in the temperature of the cleaning solution will increase the etching rate of the silicon oxide layer, resulting in serious material loss.

[0030] See also Figure 4 As shown, in one embodiment of the present invention, the general formula of the additive is, for example: ; wherein R1, R2 and R3 are each a methyl group, an ethyl group or a propyl group. The nitrogen bond (N + ) produces an attractive force on the negative charge, while the R group connected to the nitrogen atom produces a repulsive force, which enables the additive to form hydrogen bonds in the solution, thereby changing the activity of water, and the carboxyl group (COO - ) The adsorbed water molecules are distributed around the compound in a three-dimensional direction under the action of two opposite forces. This structure has the dual properties of a surfactant and a hydrogen bond donor. On the one hand, it improves the hydrophilicity of the cleaning solution and enhances the cleaning effect. On the other hand, the coordination effect of the anions and cations in the additives induces the water molecules to bind, that is, through the electrostatic induction effect, the additives bind to the water molecules, further inhibiting the formation of ice crystals, so that the cleaning solution has excellent low-temperature resistance. Thereby, a good cleaning effect can be obtained at low temperatures, and the cleaning temperature of the cleaning solution can be reduced. While reducing the temperature of the cleaning solution, the activation energy of the active components in the cleaning solution is reduced, and the etching of the material to be cleaned is avoided, thereby reducing the material loss of the substrate or film layer, avoiding the influence of material loss on the semiconductor process, and improving the performance and yield of the semiconductor device finally obtained.

[0031] In one embodiment of the present invention, in the general formula of the additive, R1, R2 and R3 are each methyl, that is, the additive is trimethylglycine. In this embodiment, when the additive is selected to select trimethylglycine, the surface activity, electrostatic action and hydrophilicity of trimethylglycine can effectively remove the particle contamination on the surface of the semiconductor, and improve the cleaning efficiency and cleaning quality. And trimethylglycine, as an easily biodegradable and non-toxic additive, not only improves the safety of the cleaning solution, but also helps to protect the environment and improve the green production of enterprises. In other embodiments, if at least one of R1, R2 and R3 in the general formula of the additive is one of ethyl or propyl, that is, the additive is compared with trimethylglycine, only the carbon chain length of the R group is different, which will affect the polarity of the additive, but it can also achieve the dual properties of surfactant and hydrogen bond donor, improve the cleaning effect, and reduce the temperature of the cleaning solution.

[0032] In one embodiment of the present invention, the mass content of the additive in the cleaning liquid is, for example, greater than or equal to 5%. When the mass content of the additive is less than 5%, the effect of improving the low temperature resistance of the cleaning liquid is not obvious, and the etching rate of the cleaning liquid on the substrate or film layer is high, resulting in an insignificant particle removal effect on the substrate or film layer, and also causing serious loss of substrate or film material, which is not conducive to the manufacture of semiconductor devices. As the mass content of the additive increases, the surface activity increases, the cleaning effect increases, but the low temperature characteristics of the cleaning liquid gradually decrease, resulting in a decrease in the cleaning effect. Therefore, the mass content of the additive in the cleaning liquid is controlled to ensure the cleaning effect. And when the low temperature characteristics of the cleaning liquid gradually decrease, the etching rate of the substrate or film material decreases, thereby reducing the material loss of the substrate or film layer, until no loss of the substrate or film material is caused. Therefore, the two work together to improve the cleaning effect while avoiding material loss. In this embodiment, the mass content of the additive is, for example, 5%~15%, and the low temperature resistance temperature of the obtained cleaning liquid is, for example, -10℃~-22℃, where the low temperature resistance temperature refers to the temperature threshold at which the cleaning liquid remains liquid without freezing in a low temperature environment. By controlling the mass content of the additive, material loss can be avoided while ensuring the low-temperature cleaning effect. At the same time, the mass content of the additive is low, which effectively controls the production cost. In other embodiments, the upper limit of the mass content of the additive is not specifically limited, and is determined based on the cleaning materials, process steps, and the cleaning effect to be achieved, so as to ensure that the film layer after the substrate is cleaned meets the production requirements. Among them, as the content of the additive further increases, the effect of reducing the low-temperature resistance of the cleaning solution gradually weakens, and eventually tends to a limit value. In one embodiment of the present invention, the limit value is, for example, around -30°C.

[0033] See also Figure 5As shown, in one embodiment of the present invention, taking the additive as trimethylglycine, the active components as ammonium hydroxide and hydrogen peroxide, and the solvent as water as an example, the cleaning effect of the mass content of the additive on the silicon oxide layer is studied. Among them, the mass ratio of ammonium hydroxide, hydrogen peroxide and water is, for example, 1:2:10, the mass content of the trimethylglycine additive in the cleaning solution is controlled, the cleaning time is controlled to be consistent, and the influence of the mass content of the additive on the cleaning solution is determined. When trimethylglycine is not added, the minimum cleaning temperature of the cleaning solution is 25°C, the cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 1.2Å / min, and the number of particles removed (PA RMV) is, for example, 8e.a (number of particles), and the particle removal effect is good, but the etching rate of the cleaning solution on silicon oxide is high, resulting in serious loss of silicon oxide material. When the mass content of trimethylglycine in the cleaning solution is 5%, the minimum cleaning temperature of the cleaning solution is -10°C, the cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 0.3Å / min, and the number of particles removed is, for example, 7e.a. By adding additives, the etching rate of the cleaning solution on silicon oxide is reduced, and material loss can be reduced during the cleaning process. When the mass content of trimethylglycine in the cleaning solution is 8%, the minimum cleaning temperature of the cleaning solution is -15°C, the cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 0.1Å / min, and the number of particles removed is, for example, 7e.a. By increasing the mass content of the additive, the etching rate of the cleaning solution on silicon oxide can be further reduced, and substantially no material loss can be achieved without much effect on the particle removal effect. When the mass content of trimethylglycine in the cleaning solution is 10%, the minimum cleaning temperature of the cleaning solution is -19°C, and the cleaning solution does not etch the silicon oxide layer, that is, at this time, the etching rate of the cleaning solution on silicon oxide is, for example, 0, and the number of removed particles is, for example, 6e.a. During the cleaning process, there is no material loss. When the mass content of trimethylglycine in the cleaning solution is 15%, the minimum cleaning temperature of the cleaning solution is -22°C, and the cleaning solution does not etch the silicon oxide layer, that is, at this time, the etching rate of the cleaning solution on silicon oxide is, for example, 0, and the number of removed particles is, for example, 6e.a. During the cleaning process, there is no material loss. That is, as the mass content of the additive increases, the low-temperature resistance of the cleaning solution decreases, and the effect of reducing the low-temperature resistance gradually weakens. The etching speed of the cleaning solution on the substrate or film layer decreases until the substrate or film layer is not etched. At the same time, it has little effect on the number of particles removed, and the hydrophilic properties of the additive can enhance the cleaning effect. Therefore, the comprehensive content of the additive and the cleaning temperature of the cleaning solution can improve the cleaning effect without material loss, which can solve the problem of material loss in the cleaning process and improve the performance and yield of the obtained semiconductor devices.

[0034] In one embodiment of the present invention, the pH value of the cleaning liquid is, for example, 4 to 13. In this embodiment, when the cleaning liquid is used for the silicon oxide layer, the pH value of the cleaning liquid is, for example, 8 to 13, and for example, 9 to 11. When cleaning the silicon oxide layer, the pH value of the cleaning liquid is controlled. In a low temperature environment, the volatility of the alkaline substance is low, the compatibility is better, and a better particle removal effect can be achieved, and the material loss can reach zero loss. In other embodiments, when the cleaning liquid is used to clean other materials, the pH value of the cleaning liquid is adjusted according to the selected active components to ensure the cleaning effect and reduce material loss. The type selection of the mixed components of the cleaning liquid and the setting of the mixing ratio have a high degree of freedom, which can meet the application of the cleaning liquid in different environments and improve the applicability of the cleaning liquid.

[0035] In one embodiment of the present invention, the present invention provides a method for preparing a semiconductor cleaning solution, specifically, adding an active component to a solvent, mixing uniformly, and obtaining an active component solution with a preset mass content. The active component can be added to the solvent once or in batches to ensure that the active component and the solvent are fully mixed. During the mixing process, ultrasonic stirring, heating stirring, low-temperature stirring or magnetic stirring, etc. are selected according to the types of the solvent and the active component to ensure that the active component and the solvent are fully mixed.

[0036] In one embodiment of the present invention, after obtaining a solution of an active component with a preset mass content, an additive is added to mix uniformly. In this embodiment, the additive is added to the solution of the active component with a preset mass content, for example, by graded mixing, to obtain a cleaning solution. Among them, the mass content of the additive in the cleaning solution is controlled, for example, by adding it at a gradient of 1% to 2% until the preset mass content is reached, which can ensure that the additive is uniformly mixed in the cleaning solution and at the same time achieve the low temperature performance of the cleaning solution, thereby reducing the material loss of the substrate or the film layer.

[0037] In one embodiment of the present invention, a substrate to be cleaned is provided, the substrate being, for example, a substrate without a film layer formed thereon, the substrate being, for example, silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium phosphide (InP), gallium arsenide (GaAs), silicon germanium (GeSi), sapphire, a silicon wafer or a semiconductor material formed by other III / V compounds, or being a stacked structure composed of semiconductor materials, or being silicon on insulator, stacked silicon on insulator, silicon germanium on insulator, and germanium on insulator, that is, the cleaning liquid can clean different substrates. In other embodiments, at least one film layer or a semiconductor structure is formed on the substrate to be cleaned, and the film layer is, for example, a nitride layer, an oxide layer, a carbide layer, an organic layer, a metal layer or a semiconductor layer, etc. According to different cleaning materials, different solvents and active components are selected, and then additives with a preset mass content are added, which can reduce the low-temperature performance of the cleaning agent, thereby obtaining a good cleaning effect at low temperatures, removing defects or particles and other contaminants on the surface of the substrate or film layer, and at the same time, as the cleaning temperature of the cleaning liquid decreases, the material loss of the substrate or film layer can be reduced, avoiding the influence of material loss on the semiconductor process, improving the performance and yield of the final semiconductor device, and meeting the production of small-size semiconductor devices.

[0038] In one embodiment of the present invention, the cleaning liquid can be used in different procedures of the semiconductor process, for example, in the post-cleaning process, such as after dry etching, plasma treatment, annealing, chemical mechanical polishing or deposition. Among them, the film layer treated by dry etching, plasma treatment, annealing, chemical mechanical polishing or deposition is not specifically limited, and can be applied to different processing processes of different materials. After the process is completed, the cleaning liquid is used for cleaning, and the cleaning can be performed under low temperature conditions to ensure the cleaning effect. At the same time, the material loss is reduced, thereby improving the quality of each process link of the semiconductor device and obtaining a semiconductor device with high quality, high performance and high yield.

[0039] In summary, the present invention provides a semiconductor cleaning liquid, a preparation method and a cleaning method for semiconductor structures. The unexpected technical effect of the present application is that the additive has the dual properties of a surfactant and a hydrogen bond donor, which enhances the cleaning effect, and can inhibit the generation of ice crystals under low temperature conditions, reduce the material loss of the substrate or film layer, avoid the influence of material loss on the semiconductor process, and improve the yield of the semiconductor process. The hydrophilicity of the cleaning liquid can be improved, the cleaning effect can be enhanced, and the coordination effect of the anions and cations in the additive induces the binding of water molecules, that is, through the electrostatic induction effect, it binds with water molecules, so that the cleaning liquid has excellent low temperature resistance. The safety of the cleaning liquid can be improved, and it is also helpful to protect the environment and improve the green production of enterprises. The type selection and mixing ratio setting of the cleaning liquid are high in freedom, which can meet the application of the cleaning liquid in different environments and improve the applicability of the cleaning liquid. It can ensure that the additive achieves a uniform mixing degree in the cleaning liquid, and at the same time achieves the low temperature performance of the cleaning liquid, thereby reducing the material loss of the substrate or film layer. The cleaning liquid can be applied to all links of the semiconductor process to obtain high-quality, high-performance and high-yield semiconductor devices.

[0040] References throughout the specification to "one embodiment," "an embodiment," or "a specific embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention, and not necessarily in all embodiments. Thus, various appearances of the phrases "in one embodiment," "in an embodiment," or "in a specific embodiment" in different places throughout the specification do not necessarily refer to the same embodiment. In addition, the particular features, structures, or characteristics of any specific embodiment of the invention may be combined with one or more other embodiments in any suitable manner. It should be understood that other variations and modifications of the embodiments of the invention described and illustrated herein may be possible in light of the teachings herein and are to be considered part of the spirit and scope of the invention.

[0041] The embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A semiconductor cleaning solution, characterized in that: At least: Solvents; active ingredients; and The additive has the general formula ; Wherein, R1, R2 and R3 are each one of methyl, ethyl or propyl; the low temperature resistance of the cleaning solution is -10℃~-22℃.

2. The semiconductor cleaning solution according to claim 1, characterized in that: The mass content of the additive in the cleaning liquid is greater than or equal to 5%.

3. The semiconductor cleaning solution according to claim 2, characterized in that: The mass content of the additive in the cleaning liquid is 5% to 15%.

4. The semiconductor cleaning solution according to claim 1, characterized in that: R1, R2 and R3 are each methyl.

5. The semiconductor cleaning solution according to claim 1, characterized in that: The solvent includes at least one of an organic solvent or water, the organic solvent includes at least one of n-hexane, isopropanol, cyclohexanone, acetone or methanol, and the water is selected from distilled water, deionized water, high-purity water or ultrapure water.

6. The semiconductor cleaning solution according to claim 1, characterized in that: The active component includes at least one of an acidic substance, an alkaline substance, an oxidizing substance or an organic substance.

7. A method for preparing a semiconductor cleaning solution, characterized in that: include: Adding the active component to the solvent and mixing evenly to obtain an active component solution with a preset mass content; as well as The additive is added into the active component solution with a preset mass content by graded mixing to obtain a cleaning solution.

8. The method for preparing a semiconductor cleaning solution according to claim 7, characterized in that: The mass content of the additive in the cleaning solution is added in a gradient of 1% to 2% until a preset mass content is reached.

9. A method for cleaning a semiconductor structure, characterized in that: The substrate or film layer is cleaned at -10°C to -22°C using the cleaning solution described in any one of claims 1 to 6.

10. The semiconductor structure cleaning method according to claim 9, characterized in that: The substrate or the film layer has zero loss during the cleaning process.

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