Mold design method for growing gallium oxide crystal by edge-defined film-fed growth method, mold and growth furnace

Abstract

The invention provides a mold design method for growing gallium oxide crystals by an edge-defined film-fed growth method, a mold and a growth furnace, and relates to the technical field of crystal growth. The method comprises the following steps: determining a crystallization interface based on a crystal growth furnace comprising a to-be-designed mold and a gallium oxide crystal; under the condition that the maximum distance between the top edge of the to-be-designed mold and the edge of the crystallization interface is smaller than the target distance and the crystallization interface does not meet the target condition, primary groove treatment is conducted on the to-be-designed mold; under the condition that the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, secondary groove treatment is conducted on the to-be-designed mold till the crystallization interface meets the target condition; and under the condition that the maximum distance is smaller than or equal to the target distance and the crystallization interface meets the target condition, determining the to-be-designed mold as a target mold. According to the embodiment of the invention, the stability and the crystal growth quality of the gallium oxide crystal in the crystal growth process are improved.

Description

Technical Field

[0001] The invention relates to the technical field of crystal growth, and in particular to a mold design method, a mold and a growth furnace for growing gallium oxide crystals using a guided mold method. Background Art

[0002] Gallium oxide (Ga2O3) crystals have attracted much attention due to their high bandgap (4.8eV), high breakdown electric field strength and excellent thermal stability. They are widely used in high-power electronic devices, ultraviolet light detectors, transparent conductive films and other optoelectronic devices. The guided mode method, also known as the edge-defined film-fed growth method, is one of the methods for growing large-sized gallium oxide single crystals. The gallium oxide melt is placed in a crucible with a mold fixed to it, and a capillary slit is left in the middle of the mold. The gallium oxide melt rises to the top of the mold through the capillary action of the capillary slit, forming a thin film and diffusing around it. The seed crystal induces crystallization to form a gallium oxide single crystal.

[0003] In the process of growing gallium oxide crystals by the guided mold method, the shape of the mold top affects the shape of the crystallization interface of the gallium oxide crystal, and the shape of the crystallization interface further determines the stability of crystal growth; specifically, when the shape of the mold top is a groove, it is easy to form a crystallization interface convex to the gallium oxide melt, which is conducive to improving the stability of crystal growth, while when the shape of the mold top is a plane or even convex upward, it is easy to cause the crystallization interface to be concave to the crystal, thereby causing the crystal growth stability to decrease. Therefore, the shape of the mold top currently used for growing gallium oxide crystals by the guided mold method is generally as follows: Figure 1 The groove shape shown.

[0004] However, the grooves on the top of the current mold are designed to pass through both ends, which easily leads to the surface tension of the gallium oxide melt being unable to overcome its own gravity and being separated from the gallium oxide crystal at the two end areas of the top of the mold, thereby reducing the stability of the gallium oxide crystal growth process and further reducing the crystal growth quality of the gallium oxide crystal. Summary of the invention

[0005] The embodiments of the present invention provide a mold design method, a mold and a growth furnace for growing gallium oxide crystals by a guided mold method, which can solve the problem that the mold in the related art easily causes the gallium oxide melt to separate from the gallium oxide crystal, thereby causing the growth stability of the gallium oxide crystal and the crystal growth quality to decrease.

[0006] In a first aspect, an embodiment of the present invention provides a method for designing a mold for growing gallium oxide crystals using a guided mode method, the method comprising: Based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by the crystal growth furnace, determining a crystallization interface corresponding to the gallium oxide crystal; the crystallization interface is a solid-liquid interface between the gallium oxide crystal and a gallium oxide melt at the top of the mold to be designed; Obtaining the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface; Determine whether the crystallization interface meets the target condition; the target condition is that the crystallization interface is entirely convex toward the mold to be designed and the crystallization interface is not adhered to the mold to be designed; In the case where the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, a groove process is performed on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove process is equal to the target distance and / or the crystallization interface meets the target condition; When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove processing is equal to the target distance; When the maximum distance is less than or equal to the target distance and the crystallization interface satisfies the target condition, the mold to be designed is determined as a target mold.

[0007] In a second aspect, an embodiment of the present invention provides a mold, wherein the mold is designed by the mold design method for growing gallium oxide crystals using a guided mode method as described in any one of the above items.

[0008] In a third aspect, an embodiment of the present invention provides a crystal growth furnace, wherein the crystal growth furnace comprises the mold as described above.

[0009] The mold design method for growing gallium oxide crystals by a guided mold method provided by an embodiment of the present invention first determines a crystallization interface corresponding to the gallium oxide crystal based on a crystal growth furnace including the mold to be designed and the gallium oxide crystal grown by the crystal growth furnace, and then, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than the target distance and the crystallization interface does not meet the target condition, the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is increased to the target distance or the crystallization interface meets the target condition by a primary groove treatment; when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, the mold to be designed is subjected to a secondary groove treatment according to the crystallization interface while ensuring that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove treatment is equal to the target distance, so as to increase the degree of depression of the top of the mold to be designed, until The crystallization interface meets the target condition, and when the maximum distance is less than or equal to the target distance and the crystallization interface meets the target condition, the mold to be designed is determined as the target mold; under the premise of ensuring that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, the embodiment of the present invention increases the degree of concavity of the top of the mold to be designed through primary groove processing and secondary groove processing so that the crystallization interface meets the target condition, thereby avoiding the problem of decreased crystal growth stability caused by the crystallization interface being concave toward the gallium oxide crystal. Furthermore, the embodiment of the present invention also avoids the problem of separation of the gallium oxide melt and the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, thereby improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold, thereby improving the crystal growth quality of the grown gallium oxide crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0011] Figure 1 It is a structural schematic diagram of a mold in a crystal growth furnace of a related technology provided by the present invention; Figure 2 It is a flow chart of the steps of a mold design method for growing gallium oxide crystals by a guided mold method provided by the present invention; Figure 3 It is a structural schematic diagram of a crystal growth furnace provided by the present invention; Figure 4 The side structure diagram of a crystal growth furnace provided by the present invention is Figure 1 ; Figure 5 The side structure diagram of a crystal growth furnace provided by the present invention is Figure 2 ; Figure 6 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 1 ; Figure 7 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 1 ; Figure 8 The side structure of a mold to be designed along the thickness direction provided by the present invention is shown in FIG. Figure 1 ; Fig. 9 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 2 ; Fig.10 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 2 ; Fig.11 The side structure of a mold to be designed along the thickness direction provided by the present invention is shown in FIG. Figure 2 ; Fig.12 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 3 ; Fig.13 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 3 ; Fig.14 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 4 ; Fig.15 This is a schematic diagram of a cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention. Figure 1 ; Fig.16 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 4 ; Fig.17 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 5 ; Fig.18 This is a schematic diagram of a cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention. Figure 2 ; Fig.19 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 5 ; Fig. 20The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 6 ; Fig.21 This is a schematic diagram of a cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention. Figure 3 ; Fig. 22 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 6 ; Fig.23 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 7 ; Fig.24 This is a schematic diagram of a cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention. Figure 4 ; Fig.25 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 7 ; Fig.26 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 8 ; Fig. 27 This is a schematic diagram of a cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention. Figure 5 ; Fig.28 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 8 ; Fig.29 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 9 ; Fig.30 This is a schematic diagram of the structure of a mold to be designed provided by the present invention. Figure 9 ; Fig.31 The cross-sectional structure of a mold to be designed along the width direction provided by the present invention is shown in FIG. Figure 10 ; Fig.32 The present invention provides a logic block diagram of a mold design device for growing gallium oxide crystals using a guided mold method.

[0012] Reference numerals: 11-crystal growth furnace; 12-gallium oxide crystal; 121-mold to be designed; 1211-capillary slit; 122-induction coil; 123-crucible; 13-gallium oxide melt; 131-liquid bridge; 01-crystallization interface; 011-edge region; 012-middle region; 21-first edge; 22-second edge; 23-third edge; 24-fourth edge; 31-first concave path; 32-second concave path; 33-third concave path; 331-third concave sub-path; 332-fourth concave sub-path; 34-fourth concave path; 341-first concave sub-path; 342-second concave sub-path; 35-connecting path; 001-first concave position; 002-second concave position; 003-third concave position; 004-fourth concave position; 41-first side edge; 42-second side edge. DETAILED DESCRIPTION

[0013] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0014] Method Embodiment Reference Figure 2 , shows a flow chart of the steps of a mold design method for growing gallium oxide crystals by a guided mold method of the present invention, and the method may specifically include the following steps: Step S101: based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by the crystal growth furnace, determining a crystallization interface corresponding to the gallium oxide crystal.

[0015] The mold to be designed includes a capillary slit arranged along the width direction of the mold to be designed, and the capillary slit is used to transfer the gallium oxide melt to the top of the mold to be designed, and the crystallization interface is the solid-liquid interface between the gallium oxide crystals and the gallium oxide melt at the top of the mold to be designed.

[0016] Step S102: Obtain the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface.

[0017] Step S103: determine whether the crystallization interface meets the target condition.

[0018] Wherein, the target condition is that the crystallization interface as a whole is convex toward the mold to be designed and the crystallization interface is not adhered to the mold to be designed.

[0019] Step S104: When the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, the mold to be designed is subjected to a groove treatment according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove treatment is equal to the target distance and / or the crystallization interface meets the target condition.

[0020] The target distance is a limit distance between the top of the mold to be designed and the crystallization interface when the surface tension and gravity of the gallium oxide melt are balanced.

[0021] Step S105 , when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition.

[0022] Wherein, the maximum distance between the top edge of the mold to be designed after the secondary groove processing and the edge of the crystallization interface is equal to the target distance.

[0023] Step S106: When the maximum distance is less than or equal to the target distance and the crystallization interface meets the target condition, the mold to be designed is determined as a target mold.

[0024] The mold design method for growing gallium oxide crystals by the guided mode method provided in the embodiment of the present invention can be applied to any electronic device with data processing function, which may include but is not limited to mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, and fixed terminals such as digital TVs and desktop computers.

[0025] The mold to be designed is a mold set in a crystal growth furnace for growing gallium oxide crystals by a guided mold method. Figure 3 , showing a schematic structural diagram of a crystal growth furnace provided by the present invention, such as Figure 3As shown, the crystal growth furnace 11 includes a mold to be designed 121, a crucible 123 and an induction coil 122; wherein the crucible 123 contains a gallium oxide melt 13; the induction coil 122 is arranged on the outer wall of the crucible 123, and when current is passed into the induction coil 122, the induction coil 122 heats the gallium oxide melt 13 in the crucible 123 through the crucible 123; the bottom of the mold to be designed 121 is fixed in the crucible 123, and a capillary slit 1211 along the width direction of the mold to be designed 121 is arranged in the mold to be designed 121, and the gallium oxide melt 13 in the crucible 123 can rise to the top of the mold to be designed 121 by capillary action, and form a thin film on the top of the mold to be designed 121 and diffuse around, forming a liquid bridge 131 between the mold to be designed 121 and the gallium oxide crystal 12, and the liquid bridge 131 is induced by the seed crystal to crystallize to form the gallium oxide crystal 12. Among them, the gallium oxide crystal 12 is specifically a gallium oxide single crystal.

[0026] It can be understood that the gallium oxide melt 13 between the top of the mold 121 to be designed and the gallium oxide crystal 12 is a liquid bridge 131, and the upper surface of the liquid bridge 131 is the solid-liquid interface between the gallium oxide crystal 12 and the gallium oxide melt 13, which is the crystallization interface 01 corresponding to the gallium oxide crystal 12.

[0027] In step S101, the electronic device may determine the crystallization interface corresponding to the gallium oxide crystal based on a method for determining a crystallization interface known to those skilled in the art, based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown using the crystal growth furnace; in some embodiments, the crystallization interface determined by step S101 is a crystallization interface determined by the electronic device based on the current mold to be designed in the crystal growth furnace and a gallium oxide crystal grown by a guided mold method using the crystal growth furnace, and the crystallization interface is infinitely close to an actual solid-liquid interface between the gallium oxide crystal and the gallium oxide melt.

[0028] The width direction of the mold to be designed refers to the direction of the larger side in the plane perpendicular to the height direction of the mold to be designed; Figure 3 , the width direction of the mold to be designed 121 is parallel to the direction of the y-axis. In the plane of the mold to be designed 121 that is perpendicular to the height direction of the mold to be designed 121 , the size of the larger side is the width of the mold to be designed 121 .

[0029] The thickness direction of the mold to be designed refers to the direction of the edge perpendicular to the width direction in the plane perpendicular to the height direction of the mold to be designed; refer to Figure 3, the thickness direction of the mold to be designed 121 is parallel to the direction of the x-axis. In the plane perpendicular to the height direction of the mold to be designed 121 , the dimension of the side perpendicular to the width direction is the thickness of the mold to be designed 121 .

[0030] After determining the crystallization interface corresponding to the gallium oxide crystal through step S101, the electronic device can execute step S102 to obtain the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface determined in step S101, and execute step S103 to determine whether the crystallization interface meets the target condition, and based on the maximum distance obtained through step S102 and the determination result of whether the crystallization interface meets the target condition determined through step S103, perform operations corresponding to the determination result of the maximum distance and whether the crystallization interface meets the target condition.

[0031] The top edge is the outermost edge of the top of the mold to be designed, that is, the edges around the top.

[0032] After step S101, the electronic device may execute step S102 and step S103 in parallel, or execute step S102 and step S103 sequentially. The embodiment of the present invention does not specifically limit the order of executing step S102 and step S103.

[0033] Specifically, in step S102, the electronic device can respectively determine the vertical distance between each point in the top edge of the mold to be designed and the crystallization interface determined by step S101, and then determine the maximum value of each vertical distance as the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface.

[0034] As an example, see Figure 4 , showing a side structure diagram of a crystal growth furnace provided by the present invention Figure 1 , specifically, Figure 4 For Figure 3 The side structure schematic diagram of the crystal growth furnace 11 in the AA direction is shown; Figure 4 As shown, when the shape of the top of the mold 121 to be designed is a plane and the crystallization interface 01 is convex toward the mold 121 to be designed, the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01 is the vertical distance between the highest point on the edge of the crystallization interface 01 and the top edge of the mold 121 to be designed.

[0035] As another example, refer to Figure 5 , showing a side structure diagram of a crystal growth furnace provided by the present invention Figure 2 , specifically, Figure 5 For Figure 3A schematic diagram of the side structure of the crystal growth furnace 11 in the AA direction is shown; when the shape of the top of the mold 121 to be designed is a groove passing through both ends and the crystallization interface 01 convexes toward the mold 121 to be designed, the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01 can be the vertical distance between the lowest point in the edge of the crystallization interface 01 and the lowest point of the top edge of the mold 121 to be designed.

[0036] In the embodiment of the present invention, the target condition is that the crystallization interface is convex toward the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed; it can be understood that, when the crystallization interface is convex toward the mold to be designed as a whole, the crystal growth process of growing gallium oxide crystals by the guided mold method using a crystal growth furnace including the mold to be designed has high stability. Further, when the crystallization interface is not adhered to the mold to be designed, it indicates that the crystallization interface convex toward the mold to be designed will not adhere to the top of the mold to be designed during the crystal growth process, which is beneficial to further improve the stability of the crystal growth process and the crystal quality of the grown gallium oxide crystals.

[0037] The target distance is the limit distance between the top of the mold to be designed and the crystallization interface when the surface tension and gravity of the gallium oxide melt are balanced, and the limit distance is the maximum distance that can be reached between the top edge of the mold to be designed and the edge of the crystallization interface when the surface tension and gravity of the gallium oxide melt are balanced; specifically, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, the surface tension of the gallium oxide melt is equal to or opposite to its own gravity, that is, the surface tension of the gallium oxide melt can be balanced with its own gravity, so that the gallium oxide melt will not separate from the gallium oxide crystal due to inability to overcome its own gravity; when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is greater than the target distance, the surface tension of the gallium oxide melt will not be able to overcome its own gravity and separate from the gallium oxide crystal.

[0038] Reference Figure 4 and Figure 5 The process of the electronic device determining the target distance includes steps A11 to A12: Step A11, calculate the limit height of the liquid bridge curved liquid surface according to the Young-Laplace equation, such as Figure 4 and Figure 5 As shown, the meniscus refers to the liquid surface in contact with air in the liquid bridge 131.

[0039] Specifically, the shape of the meniscus can be described by the Young-Laplace equation as shown below: (1) in, represents the density of the gallium oxide melt 13; represents the acceleration due to gravity; represents the vertical distance between the free surface of the gallium oxide melt 13 in the crucible and the top of the mold 121 to be designed; represents the function between the height of the meniscus in the z-axis direction and the distance in the x-axis direction; represents the surface tension of the gallium oxide melt 13; and Represents the radius of curvature of the meniscus.

[0040] Integrating formula 1 along the x-axis direction gives the following formula: (2) in, Represents the integration constant.

[0041] It is understandable that in order to achieve the isodiameter growth of the gallium oxide crystal 12, it is necessary to ensure that the growth angle α is between 10° and 20°. Figure 4 and Figure 5 As shown, the growth angle α is the angle between the meniscus and the length direction of the gallium oxide crystal 12 .

[0042] From this, the initial conditions can be determined as follows: (3) (4) in, represents the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01, that is, the height of the curved liquid surface; Represents the growth angle.

[0043] In addition, since gravity and surface tension are mutually balanced forces, Therefore, the maximum height of the curved liquid surface of the liquid bridge 131 (h = h max ) The corresponding boundary conditions are: (5) (6) Substituting the initial value conditions and boundary value conditions into formula 2, we have: (7) in, Indicates the maximum height of the meniscus.

[0044] After finishing, we can get: (8) According to formula 8, the maximum height of the curved liquid surface can be determined , and the limit height of the meniscus It depends on the vertical distance between the free surface of the gallium oxide melt 13 in the crucible and the top of the mold 121 to be designed. .

[0045] Step A12: Determine the target distance according to the limit height of the liquid bridge curved liquid surface.

[0046] Specifically, in some embodiments, the target distance may be equal to the limit height of the meniscus. In other embodiments, the target distance may be less than the limit height of the meniscus. Any value of .

[0047] In the embodiment of the present invention, when the crystallization interface meets the target condition and the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, it indicates that the crystal growth process of growing gallium oxide crystals by the guided mold method using the crystal growth furnace including the mold to be designed has high stability and the crystallization interface will not adhere to the mold to be designed, and when the maximum distance is less than or equal to the target distance, the gallium oxide melt will not separate from the gallium oxide crystal because the surface tension cannot overcome its own gravity. The electronic device can execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold, and use the crystal growth furnace including the target mold to grow gallium oxide crystals.

[0048] It should be noted that the overall convexity of the crystallization interface toward the mold to be designed means that there is no region in the crystallization interface that is concave toward the gallium oxide crystal.

[0049] In step S103, the electronic device can determine whether the crystallization interface is convex as a whole toward the mold to be designed according to the shape of the crystallization interface, and determine whether the crystallization interface is adhered to the mold to be designed according to the positional relationship between the crystallization interface and the top of the mold to be designed. In the case where the crystallization interface is convex as a whole toward the mold to be designed and the crystallization interface is not adhered to the mold to be designed, it is determined that the crystallization interface meets the target condition; in the case where the shape of the crystallization interface does not meet the requirement of being convex as a whole toward the mold to be designed, and / or the crystallization interface is adhered to the mold to be designed, it is determined that the crystallization interface does not meet the target condition, and it is necessary to perform groove processing on the mold to be designed through the corresponding operation of step S104 or step S105 so that the crystallization interface meets the target condition.

[0050] Among them, the electronic device determines whether the crystallization interface is adhered to the mold to be designed according to the positional relationship between the crystallization interface and the top of the mold to be designed, specifically: first, obtain the first z-axis coordinate of the lowest point of the crystallization interface, and the second z-axis coordinate of the lowest point of the top edge of the mold to be designed; then, calculate the difference between the first z-axis coordinate and the second z-axis coordinate; when the difference is greater than 0, it is determined that the crystallization interface is not adhered to the mold to be designed; when the difference is less than or equal to 0, it is determined that the crystallization interface is adhered to the mold to be designed.

[0051] In an embodiment of the present invention, when the maximum distance is greater than the target distance, the electronic device may send a prompt message to the user to prompt the user to adjust the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface to be less than or equal to the target distance, and when the maximum distance is less than or equal to the target distance, the electronic device continues to perform any operation in step S104, step S105 and step S106.

[0052] When the maximum distance is less than the target distance and the crystallization interface does not meet the target conditions, the electronic device can execute step S104 to perform a groove processing on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove processing is equal to the target distance or the crystallization interface meets the target conditions.

[0053] Specifically, when the maximum distance is less than the target distance and the crystallization interface does not meet the target conditions, the electronic device can perform the operation corresponding to step S104 multiple times until the maximum distance between the top edge of the mold to be designed after a groove processing and the edge of the crystallization interface is equal to the target distance, or the crystallization interface meets the target conditions.

[0054] In other words, when the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is less than or equal to the target distance, and the crystallization interface determined based on the crystal growth furnace including the mold to be designed after the first groove treatment and the gallium oxide crystal grown by the crystal growth furnace meets the target condition, the electronic device can execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold. When the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is equal to the target distance, and the crystallization interface determined based on the crystal growth furnace including the mold to be designed after the first groove treatment and the gallium oxide crystal grown by the crystal growth furnace does not meet the target condition, the electronic device can execute step S105 to perform a second groove treatment on the mold to be designed.

[0055] The method of performing a groove processing on the mold to be designed may be a groove processing method known to those skilled in the art, as long as the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove processing in step S104 is less than or equal to the target distance. Figure 1 As shown, it can also be Figure 6 shown.

[0056] It should be noted that after step S104, the electronic device needs to execute step S101 again to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace including the mold to be designed after one groove treatment and the gallium oxide crystal grown by the crystal growth furnace, and execute step S102 to obtain the maximum distance between the top edge of the mold to be designed after one groove treatment and the edge of the crystallization interface, and execute step S103 to determine whether the crystallization interface meets the target condition.

[0057] When the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after a groove treatment is equal to the target distance and the crystallization interface still does not meet the target conditions, execute step S105; when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after a groove treatment is less than or equal to the target distance and the crystallization interface meets the target conditions, execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold.

[0058] In an embodiment of the present invention, when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, the electronic device executes step S105 to perform secondary groove processing on the mold to be designed whose maximum distance is equal to the target distance and whose crystallization interface does not meet the target condition.

[0059] It can be understood that in step S105, before the electronic device executes step S105, the mold to be designed can be the mold to be designed after one groove treatment, or the mold to be designed without the first groove treatment, or the mold to be designed after the second groove treatment but the crystallization interface still does not meet the target conditions.

[0060] Specifically, in step S105, the electronic device can increase the depression depth of the top of the mold to be designed in any manner under the premise of ensuring that the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance; after obtaining the mold to be designed after the secondary groove treatment, the electronic device needs to execute step S101 again to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace including the mold to be designed after the secondary groove treatment and the gallium oxide crystal grown by the crystal growth furnace, and execute step S102 to obtain the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface, and execute step S103 to determine whether the crystallization interface meets the target condition; when the maximum distance is equal to the target distance and the crystallization interface still does not meet the target condition, the electronic device can repeatedly execute the operation corresponding to step S105 until the maximum distance is equal to the target distance and the crystallization interface meets the target condition, and the electronic device executes step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold.

[0061] In the related art, in order to solve the problem of decreased crystal growth stability caused by the crystal interface being concave toward the gallium oxide crystal, the shape of the top of the mold in the crystal growth furnace is designed as follows: Figure 1 However, when the groove on the top of the mold is through-through at both ends, the distance between the top edge of the mold to be designed and the crystallization interface increases at both end regions of the top of the mold, which leads to an increase in the height of the liquid bridge curved liquid surface at both end regions of the top of the mold. The surface tension of the gallium oxide melt cannot overcome its own gravity and separates from the gallium oxide crystal, which reduces the stability of the gallium oxide crystal growth process and reduces the crystal growth quality of the gallium oxide crystal. The mold design method for growing gallium oxide crystals by the guided mold method provided in the embodiment of the present invention, under the premise of ensuring that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, increases the depression degree of the top of the mold to be designed through primary groove processing and secondary groove processing so that the crystallization interface meets the target conditions, thereby avoiding the problem of decreased crystal growth stability caused by the crystallization interface being concave toward the gallium oxide crystal. Furthermore, the embodiment of the present invention also avoids the problem of separation of the gallium oxide melt and the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, thereby improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold, thereby improving the crystal growth quality of the grown gallium oxide crystals.

[0062] In an optional embodiment, in step S105, when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: Step B11, when the maximum distance is equal to the target distance, the middle area of ​​the crystallization interface is convex toward the mold to be designed, and the edge area of ​​the crystallization interface is concave toward the gallium oxide crystal, obtaining the width value of the edge area.

[0063] Step B12: determining a first concave position corresponding to the edge region in the mold to be designed according to the width value, the first expected concave depth of the secondary groove treatment, and the target plane where the capillary slit in the mold to be designed is located.

[0064] Step B13, determining the connection path between the first concave positions in the mold to be designed.

[0065] Step B14: Determine a first concave path corresponding to the edge area according to the first edge of the mold to be designed and the first concave position corresponding to the edge area.

[0066] Step B15: Determine a second concave path corresponding to the middle area according to the second edge of the mold to be designed and the connecting path.

[0067] Step B16: performing secondary groove processing on the mold to be designed according to the first concave path and the second concave path.

[0068] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the middle area of ​​the crystallization interface is convex toward the mold to be designed, and the edge area of ​​the crystallization interface is concave toward the gallium oxide crystal (that is, the shape of the crystallization interface is "m" type), it indicates that the crystallization interface does not meet the target conditions and because the maximum distance is equal to the target distance, the electronic device cannot perform groove processing on the mold to be designed through the primary groove processing in step S104. In this scenario, the electronic device can perform secondary groove processing on the mold to be designed according to the crystallization interface through operations corresponding to steps B11 to B16.

[0069] In some embodiments, before the electronic device executes step B11, the mold to be designed may be as follows: Figures 6 to 8 The top of the mold 121 to be designed after the groove processing in step S104 is in the shape of a groove with two ends passing through. Figure 7 It is along Figure 6 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Figure 8 It is along Figure 6 The schematic diagram of the side structure of the mold 121 to be designed in the thickness direction is shown.

[0070] In some other embodiments, before the electronic device executes step B11, the mold to be designed may be as follows: Figures 9 to 11 The top of the mold 121 to be designed shown in the figure has a flat surface and has not been subjected to the groove processing of step S104. Fig.10 It is along Fig. 9 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Fig.11 It is along Fig. 9 The schematic diagram of the side structure of the mold 121 to be designed in the thickness direction is shown.

[0071] In some other embodiments, before the electronic device executes step B11, the mold to be designed may be a mold to be designed after secondary groove processing, and the shape of the top of the mold to be designed is a groove with a concave depth in the middle part greater than the concave depth at the edge part.

[0072] Reference Figures 12 to 15 ,as well as Figures 16 to 18 , when the maximum distance between the top edge of the mold to be designed 121 and the edge of the crystallization interface 01 is equal to the target distance, and in the width direction of the mold to be designed 121, the middle area 012 of the crystallization interface 01 is convex toward the mold to be designed 121 and the edge area 011 of the crystallization interface 01 is concave toward the gallium oxide crystal 12, the electronic device first executes step B11 to obtain the width value S of the edge area 011.

[0073] It should be noted that Fig.12 For Figures 6 to 8 The mold to be designed 121 is obtained by performing secondary groove processing on the basis of the mold to be designed 121 shown; Fig.13 and Fig.14 It is along Fig.12 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Fig.15 It is along Fig.12 The schematic diagram of the cross-sectional structure in the thickness direction of the mold 121 to be designed is shown.

[0074] Fig.16 For Figures 9 to 11 The mold to be designed 121 is obtained by performing secondary groove processing on the basis of the mold to be designed 121 shown; Fig.17 It is along Fig.16 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Fig.18 It is along Fig.16 The schematic diagram of the cross-sectional structure in the thickness direction of the mold 121 to be designed is shown.

[0075] The width value S of the edge region 011 is the distance of the edge region 011 of the crystallization interface 01 in the width direction of the mold 121 to be designed. In step B11, the electronic device can measure the width value S of the edge region 011 using a measuring tool.

[0076] In step B12, the electronic device can determine the first concave position 001 corresponding to the edge area 011 in the mold 121 to be designed according to the width value S obtained in step B11, the first expected concave depth L1 of the secondary groove treatment, and the target plane where the capillary slit 1211 is located.

[0077] Among them, the first expected concave depth L1 of the secondary groove treatment is a concave depth preset according to the concave depth required for the secondary groove treatment; Fig.12 and Fig.16 As shown, the target plane where the capillary slit 1211 is located is a plane parallel to the capillary slit 1211 in the mold to be designed 121, and the target plane is parallel to the width direction of the mold to be designed 121.

[0078] It can be understood that when the crystallization interface 01 is of “m” type, the number of edge regions 011 in the crystallization interface 01 that are concave toward the gallium oxide crystal 12 is 2, and the electronic device can determine the width value S of each edge region 011 respectively through step B11.

[0079] In step B12 , the electronic device may determine the first concave position 001 corresponding to each edge region 011 from the mold to be designed 121 according to the width value S of the edge region 011 , the first expected concave depth L1 , and the target plane.

[0080] Specifically, the electronic device can determine the intersection of the first position indicated by the width value S of the edge region 011, the second position indicated by the first expected concave depth L1, and the target plane in the to-be-designed mold 121 as the first concave position 001 corresponding to the edge region 011. The number of the first concave positions 001 determined by the electronic device through step B12 is equal to the number of the edge regions 011, which is also 2.

[0081] In step B13, the electronic device may further determine a connection path between two first concave positions in the mold to be designed according to the two first concave positions determined in step B12.

[0082] In the embodiment of the present invention, the connection path between the two first concave positions in the mold to be designed is a smooth connection path between the two first concave paths. Fig.13 and Fig.17, the connection path 35 between the two first concave positions 001 in the mold 121 to be designed can be a straight line connection path between the two first concave positions 001; as another example, refer to Fig.14 The connection path 35 between the two first concave positions 001 in the mold 121 to be designed can be a curved connection path between the two first concave positions 001.

[0083] It should be noted that the connection path between the first concave positions is the path corresponding to the middle area of ​​the crystallization interface in the mold to be designed. Since the middle area of ​​the crystallization interface convexes toward the mold to be designed, the shape of the crystallization interface in the middle area meets the requirement of convexity toward the mold to be designed. When the middle area is not adhered to the top of the mold to be designed, there is no need to additionally increase the concave depth of the area corresponding to the middle area in the mold to be designed. In an embodiment of the present invention, the connection path corresponding to the middle area of ​​the crystallization interface can be designed as a smooth connection path.

[0084] When the shape of the crystallization interface is "m" type, the concave depth of the connection path in the mold to be designed may be equal to the concave depth corresponding to the first concave position, or may be greater than the concave depth corresponding to the first concave position.

[0085] In step B14, the electronic device may use the first edge of the mold to be designed as the path starting position, and the first concave position as the path ending position to determine the first concave path corresponding to the edge area of ​​the crystallization interface; Fig.12 and Fig.16 The first edge 21 is the top edge of the mold 121 to be designed corresponding to the edge region 011 of the crystallization interface 01 .

[0086] Specifically, refer to Fig.12 and Fig.13 ,as well as Fig.16 and Fig.17 The first concave path 31 may be a path formed by a line connecting a point on the first edge 21 and the first concave position 001 .

[0087] In step B15, the electronic device may use the second edge of the mold to be designed as the path starting position, use the connection path determined in step B13 as the path ending position, and determine the second concave path corresponding to the middle area; Fig.12 and Fig.16 The second edge 22 is the top edge corresponding to the middle area 012 of the crystallization interface 01 in the mold 121 to be designed.

[0088] Specifically, refer to Fig.12 and Fig.15 ,as well as Fig.16 and Fig.18The second concave path 32 may be a path formed by connecting a point on the second edge 22 and a point in the connecting path 35 that is closest to the straight line distance.

[0089] The first concave path and the second concave path are paths corresponding to the edge area of ​​the crystallization interface in the mold to be designed. After determining the first concave path through step B14 and determining the second concave path through step B15, the electronic device can execute step B16 to perform secondary groove processing on the mold to be designed according to the first concave path and the second concave path, and execute step S101 again after step B16 to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace of the mold to be designed after the secondary groove processing and the gallium oxide crystal grown by the crystal growth furnace, until the crystallization interface meets the target condition.

[0090] It should be noted that, since the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove treatment is still equal to the target distance, the mold to be designed is subjected to secondary groove treatment according to the first concave path and the second concave path, and the side structure schematic diagram of the mold to be designed after the secondary groove treatment is obtained is the same as the side structure schematic diagram of the mold to be designed before the secondary groove treatment. Fig.12 The schematic diagram of the side structure of the thickness direction of the mold 121 to be designed is shown in FIG. Figure 8 same; in Fig.16 The schematic diagram of the side structure of the thickness direction of the mold 121 to be designed is shown in FIG. Fig.11 same.

[0091] In the embodiment of the present invention, while ensuring that the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, the maximum concave depth of the area corresponding to the edge area in the mold to be designed after the secondary groove treatment is increased to the first expected concave depth, so as to reduce the degree to which the edge area of ​​the crystallization interface is concave toward the gallium oxide crystal, and while avoiding the separation of the gallium oxide melt and the gallium oxide crystal, the crystallization interface corresponding to the mold to be designed after the secondary groove treatment satisfies or approaches the target condition, which is conducive to obtaining a target mold with a maximum distance equal to the target distance and a crystallization interface that satisfies the target condition, thereby improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold and the crystal quality of the grown gallium oxide crystals.

[0092] In an optional embodiment, along the direction from the first edge to the first concave position, the angle between the first concave path and the horizontal plane remains unchanged or gradually increases; along the direction from the second edge to the connection path, the angle between the second concave path and the horizontal plane remains unchanged or gradually increases, thereby more accurately controlling the concave manner of the first concave path and the second concave path, which is beneficial to improving the effect of improving the crystallization interface concave toward the gallium oxide crystal, so that the shape of the crystallization interface is improved from being concave toward the gallium oxide crystal to being convex toward the mold to be designed as a whole, thereby improving the degree of proximity of the crystallization interface to the target condition.

[0093] Specifically, along the direction from the first edge to the first concave position, the first concave path may be as follows: Fig.13 and Fig.17 The straight path shown has a constant angle with the horizontal plane, and the first concave path may also be a curved path with a gradually increasing angle with the horizontal plane.

[0094] Accordingly, along the direction from the second edge to the connecting path, the second concave path may be as follows: Fig.15 and Fig.18 The straight path shown has a constant angle with the horizontal plane, and the second concave path may also be a curved path with a gradually increasing angle with the horizontal plane.

[0095] In an optional embodiment, in step S105, when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: Step B21: When the maximum distance is equal to the target distance and the crystallization interface is entirely concave toward the gallium oxide crystal, the ratio of the width to the thickness of the mold to be designed is obtained to obtain a width-to-thickness ratio.

[0096] Step B22, determining the second concave position according to the second expected concave depth of the secondary groove treatment, the target plane where the capillary slit in the mold to be designed is located, and the position of the highest point of the crystallization interface.

[0097] Step B23, determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position.

[0098] Step B24, performing secondary groove processing on the mold to be designed according to the third concave path and the fourth concave path.

[0099] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, and the crystallization interface is overall concave toward the gallium oxide crystal (that is, the shape of the crystallization interface is "n" type), it indicates that the crystallization interface does not meet the target condition and because the maximum distance is equal to the target distance, the electronic device cannot perform groove processing on the mold to be designed through the primary groove processing in step S104. In this scenario, the electronic device can perform secondary groove processing on the mold to be designed according to the crystallization interface through operations corresponding to steps B21 to B24.

[0100] The entire crystallization interface is concave toward the gallium oxide crystal, which means that there is no region in the crystallization interface that is convex toward the mold to be designed.

[0101] Among them, before the electronic device executes step B21, the mold to be designed can be the mold to be designed after the single groove processing of step S104; before the electronic device executes step B21, the mold to be designed can also be the mold to be designed that has not been subjected to the single groove processing of step S104; before the electronic device executes step B21, the mold to be designed can also be the mold to be designed after the secondary groove processing.

[0102] Reference Figures 19 to 21 ,as well as Figure 22 to Figure 24 When the maximum distance between the top edge of the mold to be designed 121 and the edge of the crystallization interface 01 is equal to the target distance, and in the width direction of the mold to be designed 121, the crystallization interface 01 is overall concave toward the gallium oxide crystal 12, the electronic device executes step B21 to obtain the width-to-thickness ratio of the mold to be designed 121, and executes step B22 to determine the second concave position 002.

[0103] It should be noted that Fig.19 For Figures 6 to 8 The mold to be designed 121 is obtained by performing secondary groove processing on the basis of the mold to be designed 121 shown; Fig. 20 It is along Fig.19 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Fig.21 It is along Fig.19 The schematic diagram of the cross-sectional structure in the thickness direction of the mold 121 to be designed is shown.

[0104] Fig. 22 For Figures 9 to 11 The mold to be designed 121 is obtained by performing secondary groove processing on the basis of the mold to be designed 121 shown; Fig.23 It is along Fig. 22 The schematic cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown in FIG. Fig.24 It is along Fig. 22The schematic diagram of the cross-sectional structure in the thickness direction of the mold 121 to be designed is shown.

[0105] Specifically, in step B21, the electronic device first obtains the width dimension and thickness dimension of the mold to be designed 121, and then calculates the ratio between the width dimension and the thickness dimension to obtain the ratio of the width and thickness of the mold to be designed 121, and determines the ratio of the width and thickness of the mold to be designed 121 as the width-to-thickness ratio of the mold to be designed 121.

[0106] In step B22, the electronic device determines the second concave position 002 according to the third position indicated by the second expected concave depth L2 of the secondary groove treatment, the target plane where the capillary slit 1211 is located, and the position of the highest point of the crystallization interface 01. Specifically, the electronic device can use the intersection of the third position indicated by the second expected concave depth L2, the target plane, and the position of the highest point of the crystallization interface 01 in the mold to be designed 121 as the second concave position 002. In the embodiment of the present invention, the number of the second concave positions 002 determined by the electronic device through step B22 is 1.

[0107] Among them, the second expected concave depth L2 of the secondary groove treatment is a concave depth pre-set according to the depth of the secondary groove treatment required for the concave depth, and the second expected concave depth L2 may be the same as the first expected concave depth L1, or may be different; Fig.19 and Fig. 22 As shown, the target plane where the capillary slit 1211 is located is a plane parallel to the capillary slit 1211 in the mold to be designed 121, and the target plane is parallel to the width direction of the mold to be designed 121.

[0108] In addition, refer to Figures 19 to 21 ,as well as Figure 22 to Figure 24 When the crystallization interface 01 is of "n" type, there is a highest point on the crystallization interface 01. In the embodiment of the present invention, the second concave position 002 is determined according to the position of the highest point of the crystallization interface 01, and the third concave path 33 and the fourth concave path 34 are determined based on the second concave position 002. This can improve the shape of the crystallization interface 01 after the third concave path 33 and the fourth concave path 34 are used to perform secondary groove processing on the designed mold 121, thereby efficiently making the crystallization interface 01 meet the target conditions and obtaining the target mold.

[0109] Specifically, when the width-to-thickness ratio and the second concave position are obtained, the electronic device can execute step B23 to determine the third concave path 33 along the width direction of the mold to be designed 121 and the fourth concave path 34 along the thickness direction of the mold to be designed 121 according to the width-to-thickness ratio, the top edge of the mold 121 to be designed, and the second concave position 002.

[0110] Among them, Fig.19 and Fig. 22 As shown, the top edge of the mold to be designed 121 includes a third edge 23 and a fourth edge 24; the third edge 23 is the top edge of the mold to be designed 121 in the thickness direction of the mold to be designed 121, and the fourth edge 24 is the top edge of the mold to be designed 121 in the width direction of the mold to be designed 121.

[0111] In the case of a small width-to-thickness ratio, it indicates that the gap between the width and thickness of the mold to be designed is relatively small. The top edge of the mold to be designed can be used as the starting position of the path, the second concave position can be used as the ending position of the path, the third concave path can be determined along the width direction of the mold to be designed, and the fourth concave path can be determined along the thickness direction of the mold to be designed; the third concave path and the fourth concave path can be straight lines or curves. In the direction from the top edge of the mold to be designed to the second concave position, the angle between the third concave path and the horizontal plane remains unchanged or gradually increases, and the angle between the fourth concave path and the horizontal plane remains unchanged or gradually increases.

[0112] When the width-to-thickness ratio is relatively large, it indicates that the gap between the width and thickness of the mold to be designed is relatively large. The top edge of the mold to be designed is directly used as the starting position of the path, and the second concave position is used as the ending position of the path. The straight line or curve along the width direction of the mold to be designed is determined as the third concave path, and the straight line or curve along the thickness direction of the mold to be designed is determined as the fourth concave path. After the mold to be designed is subjected to secondary groove treatment according to the third concave path and the fourth concave path, the improvement effect on the shape of the crystal interface is not obvious.

[0113] In an embodiment of the present invention, in order to improve the improvement effect on the shape of the crystallization interface, when the width-to-thickness ratio is relatively large, the electronic device can determine at least two concave sub-paths constituting the third concave path and / or the fourth concave path in stages during the process of determining the third concave path and / or the fourth concave path, and along the direction from the top edge of the mold to be designed to the second concave position, the angle between the concave sub-paths constituting the third concave path and / or the fourth concave path and the horizontal plane gradually increases, thereby overcoming the problem that the improvement effect on the shape of the crystallization interface after the secondary groove treatment due to the large width-to-thickness ratio of the mold to be designed is not obvious, and thus the crystallization interface can be made to meet the target conditions more accurately and efficiently to obtain the target mold.

[0114] When the third concave path and the fourth concave path are obtained through step B23, the electronic device can perform secondary groove processing on the mold to be designed according to the third concave path and the fourth concave path, and execute step S101 again to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace of the mold to be designed after the secondary groove processing and the gallium oxide crystal grown by the crystal growth furnace, until the crystallization interface meets the target condition.

[0115] In an optional embodiment, the step B23 of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position includes: Step B231, when the width-to-thickness ratio is less than or equal to a preset parameter, taking the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position, determine a third concave path along the width direction of the mold to be designed.

[0116] Step B232: Taking the fourth edge of the mold to be designed as the path starting position and the second concave position as the path ending position, determine a fourth concave path along the thickness direction of the mold to be designed.

[0117] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the crystallization interface is overall concave toward the gallium oxide crystal, and the width-to-thickness ratio of the mold to be designed is less than or equal to a preset parameter, the electronic device can execute steps B231 to B232 to determine the third concave path and the fourth concave path.

[0118] Among them, the preset parameter is the width-to-thickness ratio threshold of the mold to be designed. When the width-to-thickness ratio of the mold to be designed is less than or equal to the preset parameter, it indicates that the gap between the width and thickness of the mold to be designed is relatively small. The top edge of the mold to be designed can be used as the starting position of the path, and the second concave position can be used as the ending position of the path. The third concave path is determined along the width direction of the mold to be designed, and the fourth concave path is determined along the thickness direction of the mold to be designed. The third concave path and the fourth concave path can be a straight line or a curve, respectively.

[0119] Specifically, the preset parameter may be 6; when the preset parameter is 6, the angle between the intersection line of the third concave path and the fourth concave path and the first side of the to-be-designed mold is 10°. In the embodiment of the present invention, when the angle between the intersection line of the third concave path and the fourth concave path and the first side of the to-be-designed mold is greater than or equal to 10°, it indicates that the width-to-thickness ratio is less than or equal to the preset parameter 6, and the electronic device executes steps B231 to B232 to determine the third concave path and the fourth concave path.

[0120] When the angle between the intersection line of the third concave path and the fourth concave path and the first side of the mold to be designed is less than 10°, it indicates that the width-to-thickness ratio is greater than the preset parameter 6. When the width-to-thickness ratio of the mold to be designed is greater than the preset parameter, the gap between the width and thickness of the mold to be designed is relatively large. The third concave path and the fourth concave path are determined by steps B231 to B232, and the improvement effect on the shape of the crystallization interface after the mold to be designed is subjected to secondary groove treatment according to the third concave path and the fourth concave path is not obvious. In this scenario, the electronic device can execute steps B233 to B238 as described below to determine the third concave path and the fourth concave path.

[0121] Reference Fig. 27 The first side 41 is a side of the mold to be designed 121 that is parallel to the width direction of the mold to be designed 121 .

[0122] In step B231, in some embodiments, referring to Fig.19 and Fig. 20 ,as well as Fig. 22 and Fig.23 The electronic device takes the third edge 23 of the mold to be designed 121 as the path starting position, takes the second concave position 002 as the path ending position, and determines the straight line formed by connecting the point on the third edge 23 and the second concave position 002 as the third concave path 33 along the width direction of the mold to be designed 121. The third edge 23 is the top edge of the mold to be designed 121 in the thickness direction of the mold to be designed 121.

[0123] In some embodiments, the electronic device uses the third edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path. A curve formed by connecting the points on the third edge and the second concave position with a gradually increasing angle with the horizontal plane can be determined as the third concave path along the width direction of the mold to be designed.

[0124] In step B232, in some embodiments, referring to Fig.19 and Fig.21 ,as well as Fig. 22 and Fig.24The electronic device takes the fourth edge 24 of the mold to be designed 121 as the path starting position and the second concave position 002 as the path ending position, and can determine the straight line formed by connecting the point on the fourth edge 24 and the second concave position 002 as the fourth concave path 34 along the thickness direction of the mold to be designed 121. The fourth edge 24 is the top edge of the mold to be designed 121 in the width direction of the mold to be designed 121.

[0125] In some embodiments, the electronic device uses the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path. A curve formed by connecting the points on the fourth edge and the second concave position and having a gradually increasing angle with the horizontal plane can be determined as the fourth concave path along the thickness direction of the mold to be designed.

[0126] It should be noted that, since the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, after the mold to be designed is subjected to secondary groove treatment according to the third concave path and the fourth concave path, the schematic diagram of the side structure of the mold to be designed after the secondary groove treatment is the same as the schematic diagram of the side structure of the mold to be designed before the secondary groove treatment. Exemplarily, since the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, the mold to be designed is subjected to secondary groove treatment according to the third concave path determined by step B231 and the fourth concave path determined by step B232, and the schematic diagram of the side structure of the mold to be designed after the secondary groove treatment is the same as the schematic diagram of the side structure of the mold to be designed before the secondary groove treatment. Exemplarily, Fig.19 The schematic diagram of the side structure of the thickness direction of the mold 121 to be designed is shown in FIG. Figure 8 same; in Fig. 22 The schematic diagram of the side structure of the thickness direction of the mold 121 to be designed is shown in FIG. Fig.11 same.

[0127] In an optional embodiment, the step B23 of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position includes: Step B233, when the width-to-thickness ratio is greater than a preset parameter, taking the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position, determine a third concave path along the width direction of the mold to be designed.

[0128] Step B234, obtaining a first angle between the third concave path and the horizontal plane.

[0129] Step B235, obtaining a first projection distance of a first concave sub-path along the thickness direction of the mold to be designed in the thickness direction of the mold to be designed.

[0130] Step B236: Determine a third concave position according to the first angle and the first projection distance.

[0131] Step B237, taking the fourth edge of the mold to be designed as the path starting position and the third concave position as the path ending position, to determine a first concave sub-path along the thickness direction of the mold to be designed.

[0132] Step B238, taking the third concave position as the path starting position and the second concave position as the path ending position, determine the second concave sub-path along the thickness direction of the mold to be designed, and the first concave sub-path and the second concave sub-path are connected to form a fourth concave path along the thickness direction of the mold to be designed.

[0133] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the crystallization interface is overall concave toward the gallium oxide crystal, and the width-to-thickness ratio of the mold to be designed is greater than a preset parameter, the electronic device can execute steps B233 to B238 to determine the third concave path and the fourth concave path.

[0134] It is understandable that, when the width-to-thickness ratio of the mold to be designed is greater than the preset parameter, it indicates that the gap between the width and thickness of the mold to be designed is relatively large, and directly using the straight line or curve formed by the line connecting the top edge of the mold to be designed and the second concave position as the third concave path and the fourth concave path has no obvious effect on improving the shape of the crystallization interface. In an embodiment of the present invention, the electronic device can determine the first concave sub-path and the second concave sub-path constituting the fourth concave path through the operation segments corresponding to steps B234 to B238, so as to improve the effect of improving the shape of the crystallization interface in the scenario where the width-to-thickness ratio of the mold to be designed is greater than the preset parameter.

[0135] Specifically, in step B233, refer to Fig.26 The electronic device can determine the third concave path 33 along the width direction of the mold 121 to be designed by the same or similar method as step B231. To avoid repetition, it will not be repeated here.

[0136] When the third concave path is determined by step B233, the electronic device may execute step B234 to obtain a first angle between the third concave path and the horizontal plane. Fig.26In the case of a straight line with a constant angle with the horizontal plane as shown, the first angle β1 is the angle between the straight line and the horizontal plane; in other embodiments, when the third concave path is a curve with a gradually increasing angle with the horizontal plane, the first angle may be the minimum value of the angle between the third concave path and the horizontal plane; in still other embodiments, when the third concave path includes at least two concave sub-paths, the first angle is the angle between the first concave sub-path in the third concave path in the direction from the third edge to the second concave position and the horizontal plane.

[0137] In step B235, the first projection distance is the distance of the preset first concave sub-path extending from the edge of the mold to be designed to the inside of the mold to be designed, that is, the projection distance of the first concave sub-path in the thickness direction of the mold to be designed, and the first projection distance is smaller than the distance between the second concave position and the first side edge of the mold to be designed, and the first side edge is the side edge of the mold to be designed that is parallel to the width direction of the mold to be designed.

[0138] In step B236, refer to Fig.25 and Fig. 27 The electronic device can determine the third concave position 003 from the to-be-designed mold 121 according to the first angle β1 and the first projection distance. The concave depth of the third concave position 003 is less than the concave depth of the second concave position 002.

[0139] In step B237, refer to Fig.25 and Fig. 27 , the electronic device takes the fourth edge 24 of the mold to be designed 121 as the path starting position, and the third concave position 003 as the path ending position, and can determine the line between the point on the third edge 23 and the point with the closest straight line distance in the third concave position 003 as the first concave sub-path 341 along the thickness direction of the mold to be designed 121. It should be noted that the second angle between the first concave sub-path 341 and the horizontal plane is equal to the first angle β1, and when the second angle β2 is equal to the first angle β1, the angle between the intersection line of the first concave sub-path 341 and the third concave path 33 and the first side 41 of the mold to be designed 121 is equal to 45°, and the angle between the intersection line of the first concave sub-path 341 and the third concave path 33 and the second side 42 of the mold to be designed 121 is equal to 45°.

[0140] Reference Fig.29 The second side 42 is a side of the mold to be designed 121 that is parallel to the thickness direction of the mold to be designed 121 .

[0141] The third edge 23 is the top edge of the mold to be designed 121 in the thickness direction of the mold to be designed 121 ; the fourth edge 24 is the top edge of the mold to be designed 121 in the width direction of the mold to be designed 121 .

[0142] In step B238, refer to Fig.25 and Fig. 27 The electronic device uses the third concave position 003 as the starting position of the path and the second concave position 002 as the ending position of the path. The line between the second concave position 002 and the point with the smallest straight-line distance in the third concave position 003 can be determined as the second concave sub-path 342 along the thickness direction of the mold 121 to be designed.

[0143] Reference Fig. 27 , a second angle β2 between the first concave sub-path 341 and the horizontal plane is smaller than a third angle β3 between the second concave sub-path 342 and the horizontal plane.

[0144] It can be understood that the first concave sub-path determined by the electronic device through step B237 and the second concave sub-path determined by step B238 are connected through the third concave position to form a fourth concave path along the thickness direction of the mold to be designed.

[0145] In an optional embodiment, the step B233 takes the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position to determine the third concave path along the width direction of the mold to be designed, including: Step B2331, obtaining a third expected concave depth of a third concave sub-path along the width direction of the mold to be designed and a second projection distance of the third concave sub-path in the width direction of the mold to be designed.

[0146] Step B2332: determine a fourth concave position according to the third expected concave depth and the second projection distance.

[0147] Step B2333: Taking the third edge of the mold to be designed as the path starting position and the fourth concave position as the path ending position, determine the third concave sub-path along the width direction of the mold to be designed.

[0148] Step B2334, taking the fourth concave position as the path starting position and the second concave position as the path ending position, determine the fourth concave sub-path along the width direction of the mold to be designed, and the third concave sub-path and the fourth concave sub-path are connected to form a third concave path along the width direction of the mold to be designed.

[0149] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the crystallization interface is overall concave toward the gallium oxide crystal, and the width-to-thickness ratio of the mold to be designed is greater than a preset parameter, the electronic device can determine the third concave sub-path and the fourth concave sub-path constituting the fourth concave path through steps B2331 to B2334, while determining the first concave sub-path and the second concave sub-path constituting the third concave path through steps B2333 to B238, thereby further improving the effect of improving the shape of the crystallization interface in the scenario where the width-to-thickness ratio of the mold to be designed is greater than the preset parameter, and thereby more accurately and efficiently performing secondary groove processing on the mold to be designed so that the crystallization interface meets the target conditions, thereby obtaining the target mold.

[0150] Specifically, in step B2331, refer to Fig.28 and Fig.29 The third expected concave depth L3 is the preset depth that the third concave sub-path needs to be concave, and the third expected concave depth L3 needs to be smaller than the second expected concave depth L2.

[0151] The second projection distance is the distance that the preset third concave sub-path extends from the edge of the mold to be designed to the inside of the mold to be designed, that is, the projection distance of the third concave sub-path in the thickness direction of the mold to be designed, and the second projection distance is smaller than the distance between the second concave position and the second side edge of the mold to be designed, and the second side edge is the side edge of the mold to be designed that is parallel to the thickness direction of the mold to be designed.

[0152] In step B2332, refer to Fig.28 and Fig.29 The electronic device may determine a line segment obtained by the intersection of the third expected concave depth L3 and the second projection distance in the to-be-designed mold 121 as the fourth concave position 004 .

[0153] In step B2333, refer to Fig.28 and Fig.29 The electronic device takes the third edge 23 of the mold to be designed 121 as the starting position of the path and the fourth concave position 004 as the ending position of the path. The line between the point on the third edge 23 and the point with the closest straight-line distance in the fourth concave position 004 can be determined as the third concave sub-path 331 along the width direction of the mold to be designed 121.

[0154] In step B2334, refer to Fig.28 and Fig.29The electronic device uses the fourth concave position 004 as the starting position of the path and the second concave position 002 as the ending position of the path. The line between the second concave position 002 and the point with the smallest straight-line distance in the fourth concave position 004 can be determined as the fourth concave sub-path 332 along the width direction of the mold 121 to be designed.

[0155] Reference Fig.28 and Fig.29 , a fourth angle β4 between the third concave sub-path 331 and the horizontal plane is smaller than a fifth angle β5 between the fourth concave sub-path 332 and the horizontal plane; the fourth angle β4 is equal to the second angle β2 and the fifth angle β5 is smaller than the third angle β3.

[0156] It can be understood that the third concave sub-path determined by the electronic device through step B2333 and the fourth concave sub-path determined by step B2334 are connected through the fourth concave position to form a third concave path along the width direction of the mold to be designed.

[0157] In an optional embodiment, the step S103 of determining whether the crystallization interface meets the target condition includes: Step C11: determine the shape of the crystallization interface and the positional relationship between the crystallization interface and the mold to be designed.

[0158] Step C12: when the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed, determine that the crystallization interface is adhered to the mold to be designed.

[0159] Step C13: When the shape of the crystallization interface satisfies the first shape, or the crystallization interface is adhered to the mold to be designed, determining that the crystallization interface does not satisfy the target condition.

[0160] Step C14: when the shape of the crystallization interface satisfies the second shape and the crystallization interface is not adhered to the mold to be designed, determine that the crystallization interface satisfies the target condition.

[0161] In the embodiment of the present invention, the electronic device can determine whether the crystallization interface meets the target conditions through operations corresponding to steps C11 to C14, thereby improving the feasibility of the embodiment of the present invention and the flexibility of the implementation process.

[0162] Among them, the first shape is a preset crystallization interface shape that affects the stability of crystal growth. The first shape includes any one of the following: the middle area of ​​the crystallization interface is convex toward the mold to be designed and the edge area is concave toward the gallium oxide crystal (that is, the shape of the crystallization interface is "m" type), the entire crystallization interface is concave toward the gallium oxide crystal (that is, the shape of the crystallization interface is "n" type), and the crystallization interface is a plane.

[0163] The second shape is a preset crystallization interface shape that does not affect the stability of crystal growth, and the second shape includes the crystallization interface being overall convex toward the mold to be designed.

[0164] Specifically, in step C11, the electronic device may match the crystallization interface determined in step S101 with a preset crystallization interface shape included in the first shape and the second shape, and determine the preset crystallization interface shape matching the crystallization interface determined in step S101 as the shape of the crystallization interface determined in step S101.

[0165] In addition, in step C11, the electronic device can determine the vertical distance between each point in the top edge of the mold to be designed and the crystallization interface determined by step S101, and determine the vertical distance between each point in the top edge of the mold to be designed and the crystallization interface determined by step S101 as the positional relationship between the crystallization interface and the mold to be designed.

[0166] Among them, when at least one of the vertical distances between each point in the top edge of the mold to be designed and the crystallization interface determined by step S101 is equal to 0, the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed; when the vertical distances between each point in the top edge of the mold to be designed and the crystallization interface determined by step S101 are all greater than 0, the positional relationship indicates that there is no intersection between the crystallization interface and the top of the mold to be designed.

[0167] When the positional relationship indicates that there is no intersection between the crystallization interface and the top of the mold to be designed, the electronic device can determine that the crystallization interface and the mold to be designed are not adhered; when the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed, the electronic device can execute step C12 to determine that the crystallization interface and the mold to be designed are adhered.

[0168] When the shape of the crystallization interface determined in step S101 matches any preset crystallization interface shape included in the first shape, it is determined that the shape of the crystallization interface satisfies the first shape; when the shape of the crystallization interface determined in step S101 matches any preset crystallization interface shape included in the second shape, it is determined that the shape of the crystallization interface satisfies the second shape.

[0169] Specifically, when the shape of the crystallization interface satisfies the first shape, or the crystallization interface adheres to the mold to be designed, the electronic device executes step C13 to determine that the crystallization interface does not satisfy the target condition.

[0170] When the shape of the crystallization interface satisfies the second shape and the crystallization interface is not adhered to the mold to be designed, the electronic device executes step C14 to determine that the crystallization interface satisfies the target condition.

[0171] In an optional embodiment, when the shape of the crystallization interface satisfies the second shape, the crystallization interface is adhered to the mold to be designed and the maximum distance is less than the target distance, the electronic device can execute any of the above-mentioned groove processing methods to increase the concave depth of the top of the mold to be designed until the crystallization interface is no longer adhered to the mold to be designed, or the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the one-groove processing is equal to the target distance.

[0172] When the shape of the crystallization interface satisfies the second shape, the crystallization interface is adhered to the mold to be designed and the maximum distance is equal to the target distance, the electronic device can execute any of the secondary groove processing methods described above to increase the concave depth of the top of the mold to be designed until the crystallization interface is no longer adhered to the mold to be designed.

[0173] As an example, the crystal interface is adhered to the mold to be designed and the maximum distance is equal to the target distance. Fig.30 and Fig.31 , Fig.30 is Figures 9 to 11 The mold to be designed is obtained by performing secondary groove processing on the basis of the mold to be designed shown in FIG. Fig.31 It is along Fig.30 The cross-sectional structure diagram of the mold 121 to be designed in the width direction is shown, and along Fig.30 The schematic diagram of the side structure of the thickness direction of the mold 121 to be designed is shown in FIG. Fig.11 same.

[0174] In an optional embodiment, when the shape of the crystallization interface is a plane, ideally the crystal growth process will not be unstable. However, in actual application scenarios, the shape of the crystallization interface is in a real-time changing state. When the shape of the crystallization interface is a plane, as the crystal growth process proceeds, the probability that the shape of the crystallization interface changes to an "m" type or an "n" type is relatively high, thereby causing the stability of the crystal growth process to decrease.

[0175] In an embodiment of the present invention, when the shape of the crystallization interface is a plane and the maximum distance is less than the target distance, the electronic device can perform any of the above-mentioned groove processing methods to increase the concave depth of the top of the mold to be designed, so that the shape of the crystallization interface satisfies the second shape, thereby facilitating improving the stability of the crystal growth process and the crystal growth quality of the grown gallium oxide crystals.

[0176] When the shape of the crystallization interface is a plane and the maximum distance is equal to the target distance, the electronic device can perform any of the secondary groove processing methods described above to increase the concave depth of the top of the mold to be designed, so that the shape of the crystallization interface satisfies the second shape, which is beneficial to improve the stability of the crystal growth process and the crystal growth quality of the grown gallium oxide crystals.

[0177] In summary, the mold design method for growing gallium oxide crystals by the guided mold method provided by the embodiment of the present invention, under the premise of ensuring that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, increases the depression degree of the top of the mold to be designed through the primary groove treatment and the secondary groove treatment so that the crystallization interface meets the target condition, thereby avoiding the problem of decreased crystal growth stability caused by the crystallization interface being concave toward the gallium oxide crystal. Furthermore, the embodiment of the present invention also avoids the problem of separation of the gallium oxide melt and the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, thereby improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold, thereby improving the crystal growth quality of the grown gallium oxide crystals.

[0178] Device Embodiment Reference Fig.32 , shows a logic block diagram of a mold design device for growing gallium oxide crystals by a guided mode method provided by an embodiment of the present invention, and the device may include: A first determination module 201 is used to determine a crystallization interface corresponding to the gallium oxide crystal based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by the crystal growth furnace; the crystallization interface is a solid-liquid interface between the gallium oxide crystal and a gallium oxide melt at the top of the mold to be designed; An acquisition module 202 is used to acquire the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface; The second determination module 203 is used to determine whether the crystallization interface meets the target condition; the target condition is that the crystallization interface is convex to the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed; A first processing module 204 is used for, when the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, performing a groove processing on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove processing is equal to the target distance and / or the crystallization interface meets the target condition; The second processing module 205 is used to perform secondary groove processing on the mold to be designed according to the crystallization interface when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove processing is equal to the target distance.

[0179] The third determination module 206 is configured to determine the mold to be designed as a target mold if the maximum distance is less than or equal to the target distance and the crystallization interface meets the target condition.

[0180] Optionally, the second processing module includes: A first acquisition submodule is used to acquire a width value of the edge region when the maximum distance is equal to the target distance, the middle region of the crystallization interface is convex toward the mold to be designed, and the edge region of the crystallization interface is concave toward the gallium oxide crystal; A first determination submodule is used to determine a first concave position corresponding to the edge area from the mold to be designed according to the width value, a first expected concave depth of the secondary groove treatment, and a target plane where the capillary slit in the mold to be designed is located; A second determination submodule is used to determine a connection path between the first concave positions in the mold to be designed; A third determination submodule is used to determine a first concave path corresponding to the edge area according to a first edge of the mold to be designed and a first concave position corresponding to the edge area; the first edge is a top edge of the mold to be designed corresponding to the edge area; The fourth determination submodule is used to determine the second concave path corresponding to the middle area according to the second edge of the mold to be designed and the connection path; the second edge is the top edge of the mold to be designed corresponding to the middle area; The first processing submodule is used to perform secondary groove processing on the mold to be designed according to the first concave path and the second concave path.

[0181] Optionally, along the direction from the first edge to the first concave position, the angle between the first concave path and the horizontal plane remains unchanged or gradually increases; Along the direction from the second edge to the connecting path, the angle between the second concave path and the horizontal plane remains unchanged or gradually increases.

[0182] Optionally, the second processing module includes: A second acquisition submodule is used to acquire the ratio of the width and thickness of the mold to be designed to obtain the width-to-thickness ratio when the maximum distance is equal to the target distance and the crystallization interface is entirely concave toward the gallium oxide crystal; A fifth determination submodule is used to determine a second concave position according to a second expected concave depth of the secondary groove treatment, a target plane where the capillary slit in the mold to be designed is located, and a position of a highest point of the crystallization interface; a sixth determination submodule, configured to determine a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position; The second processing submodule is used to perform secondary groove processing on the mold to be designed according to the third concave path and the fourth concave path.

[0183] Optionally, the sixth determining submodule includes: A first determining unit is used to determine a third concave path along the width direction of the mold to be designed, taking the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position when the width-to-thickness ratio is less than or equal to a preset parameter; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; The second determination unit is used to determine a fourth concave path along the thickness direction of the mold to be designed with the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed.

[0184] Optionally, the sixth determining submodule includes: A third determining unit is used to determine a third concave path along the width direction of the mold to be designed, taking the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position when the width-to-thickness ratio is greater than a preset parameter; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; A first acquisition unit, used for acquiring a first angle between the third concave path and a horizontal plane; A second acquisition unit is used to acquire a first projection distance of a first concave sub-path along the thickness direction of the mold to be designed in the thickness direction of the mold to be designed; the first projection distance is smaller than a minimum distance between the second concave position and a first side edge of the mold to be designed, and the first side edge is a side edge of the mold to be designed that is parallel to the width direction of the mold to be designed; a fourth determining unit, configured to determine a third concave position according to the first included angle and the first projection distance; a fifth determining unit, configured to determine a first concave sub-path along the thickness direction of the mold to be designed with the fourth edge of the mold to be designed as the path starting position and the third concave position as the path ending position; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed; and a second angle between the first concave sub-path and the horizontal plane is equal to the first angle; The sixth determination unit is used to determine a second concave sub-path along the thickness direction of the mold to be designed with the third concave position as the path starting position and the second concave position as the path ending position, wherein the first concave sub-path and the second concave sub-path are connected to form a fourth concave path along the thickness direction of the mold to be designed; and the second angle is smaller than the third angle between the second concave sub-path and the horizontal plane.

[0185] Optionally, the third determining unit includes: an acquisition subunit, used for acquiring a third expected concave depth of a third concave subpath along the width direction of the mold to be designed and a second projection distance of the third concave subpath in the width direction of the mold to be designed; the third expected concave depth is less than the second expected concave depth, the second projection distance is less than the minimum distance between the second concave position and the second side edge of the mold to be designed, the second side edge being a side edge of the mold to be designed parallel to the thickness direction of the mold to be designed; a first determining subunit, configured to determine a fourth concave position according to the third expected concave depth and the second projection distance; A second determining sub-unit is used to determine a third concave sub-path along the width direction of the mold to be designed, taking the third edge of the mold to be designed as the path starting position and the fourth concave position as the path ending position; The third determining subunit is used to determine a fourth concave sub-path along the width direction of the mold to be designed with the fourth concave position as the path starting position and the second concave position as the path ending position, the third concave sub-path and the fourth concave sub-path are connected to form a third concave path along the width direction of the mold to be designed; the fourth angle between the third concave sub-path and the horizontal plane is smaller than the fifth angle between the fourth concave sub-path and the horizontal plane, the fourth angle is equal to the second angle and the fifth angle is smaller than the third angle.

[0186] Optionally, the second determining module includes: A seventh determination submodule is used to determine the shape of the crystallization interface and the positional relationship between the crystallization interface and the mold to be designed; an eighth determination submodule, configured to determine that the crystallization interface is adhered to the mold to be designed when the position relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed; a ninth determination submodule, configured to determine that the crystallization interface does not meet the target condition when the shape of the crystallization interface meets the first shape or the crystallization interface is adhered to the mold to be designed; A tenth determination submodule, configured to determine that the crystallization interface satisfies a target condition when the shape of the crystallization interface satisfies a second shape and the crystallization interface is not adhered to the mold to be designed; The first shape includes any one of the following: the middle region of the crystallization interface is convex toward the mold to be designed and the edge region is concave toward the gallium oxide crystal, the entire crystallization interface is concave toward the gallium oxide crystal, and the crystallization interface is a plane; The second shape includes the crystallization interface being entirely convex toward the mold to be designed.

[0187] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0188] An embodiment of the present invention further provides a mold, wherein the mold is designed by the mold design method for growing gallium oxide crystals using the guided mode method as described in any one of the above items.

[0189] An embodiment of the present invention further provides a crystal growth furnace, which includes the mold described above.

[0190] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0191] An embodiment of the present invention further provides an electronic device, including a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the mold design method for growing gallium oxide crystals using the guided mode method as described above when executing the computer program.

[0192] An embodiment of the present application further provides a readable storage medium, wherein the readable storage medium stores a computer program, and when the computer program is executed by a processor, the mold design method for growing gallium oxide crystals using the guided mode method as described above is implemented.

[0193] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0194] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0195] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0196] The mold design method, mold and growth furnace for growing gallium oxide crystals by the guided mold method provided by the present invention are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A mold design method for growing gallium oxide crystals by guided mode method, characterized in that: The method comprises: Based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by the crystal growth furnace, determining a crystallization interface corresponding to the gallium oxide crystal; the crystallization interface is a solid-liquid interface between the gallium oxide crystal and a gallium oxide melt at the top of the mold to be designed; Obtaining the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface; Determine whether the crystallization interface meets the target condition; the target condition is that the crystallization interface is convex to the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed; In the case where the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, a groove process is performed on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove process is equal to the target distance and / or the crystallization interface meets the target condition; When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove processing is equal to the target distance; When the maximum distance is less than or equal to the target distance and the crystallization interface satisfies the target condition, the mold to be designed is determined as a target mold.

2. The method according to claim 1, characterized in that: When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: When the maximum distance is equal to the target distance, the middle area of ​​the crystallization interface is convex toward the mold to be designed, and the edge area of ​​the crystallization interface is concave toward the gallium oxide crystal, obtaining a width value of the edge area; Determine a first concave position corresponding to the edge region from the mold to be designed according to the width value, the first expected concave depth of the secondary groove treatment, and the target plane where the capillary slit in the mold to be designed is located; Determining a connection path between the mold to be designed and the first concave position; Determine a first concave path corresponding to the edge area according to a first edge of the mold to be designed and a first concave position corresponding to the edge area; the first edge is a top edge of the mold to be designed corresponding to the edge area; Determine a second concave path corresponding to the middle area according to the second edge of the mold to be designed and the connecting path; the second edge is the top edge of the mold to be designed corresponding to the middle area; The mold to be designed is subjected to secondary groove processing according to the first concave path and the second concave path.

3. The method according to claim 2, characterized in that Along the direction from the first edge to the first concave position, the angle between the first concave path and the horizontal plane remains unchanged or gradually increases; Along the direction from the second edge to the connecting path, the angle between the second concave path and the horizontal plane remains unchanged or gradually increases.

4. The method according to claim 1, characterized in that: When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: When the maximum distance is equal to the target distance and the crystallization interface is entirely concave toward the gallium oxide crystal, obtaining a ratio of a width to a thickness of the mold to be designed to obtain a width-to-thickness ratio; Determining the second concave position according to the second expected concave depth of the secondary groove treatment, the target plane where the capillary slit in the mold to be designed is located, and the position of the highest point of the crystallization interface; Determine a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position; The mold to be designed is subjected to secondary groove processing according to the third concave path and the fourth concave path.

5. The method according to claim 4, characterized in that The step of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position comprises: When the width-to-thickness ratio is less than or equal to a preset parameter, a third concave path along the width direction of the mold to be designed is determined with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; Taking the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, determine the fourth concave path along the thickness direction of the mold to be designed; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed.

6. The method according to claim 4, characterized in that The step of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position comprises: In the case where the width-to-thickness ratio is greater than a preset parameter, a third concave path along the width direction of the mold to be designed is determined with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; Acquire a first angle between the third concave path and a horizontal plane; Acquire a first projection distance of a first concave sub-path along the thickness direction of the mold to be designed in the thickness direction of the mold to be designed; the first projection distance is less than a minimum distance between the second concave position and a first side edge of the mold to be designed, the first side edge being a side edge of the mold to be designed that is parallel to the width direction of the mold to be designed; determining a third concave position according to the first angle and the first projection distance; Taking the fourth edge of the mold to be designed as the path starting position and the third concave position as the path ending position, a first concave sub-path along the thickness direction of the mold to be designed is determined; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed; the second angle between the first concave sub-path and the horizontal plane is equal to the first angle; Taking the third concave position as the path starting position and the second concave position as the path ending position, a second concave sub-path along the thickness direction of the mold to be designed is determined, and the first concave sub-path and the second concave sub-path are connected to form a fourth concave path along the thickness direction of the mold to be designed; the second angle is smaller than the third angle between the second concave sub-path and the horizontal plane.

7. The method according to claim 6, characterized in that The method of determining a third concave path along the width direction of the mold to be designed with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position comprises: Acquire a third expected concave depth of a third concave subpath along the width direction of the mold to be designed and a second projection distance of the third concave subpath in the width direction of the mold to be designed; the third expected concave depth is less than the second expected concave depth, and the second projection distance is less than a minimum distance between the second concave position and a second side edge of the mold to be designed, wherein the second side edge is a side edge of the mold to be designed that is parallel to the thickness direction of the mold to be designed; determining a fourth concave position according to the third expected concave depth and the second projection distance; Taking the third edge of the mold to be designed as the path starting position and the fourth concave position as the path ending position, determining a third concave sub-path along the width direction of the mold to be designed; Taking the fourth concave position as the path starting position and the second concave position as the path ending position, a fourth concave sub-path along the width direction of the mold to be designed is determined, and the third concave sub-path and the fourth concave sub-path are connected to form a third concave path along the width direction of the mold to be designed; a fourth angle between the third concave sub-path and the horizontal plane is smaller than a fifth angle between the fourth concave sub-path and the horizontal plane, the fourth angle is equal to the second angle and the fifth angle is smaller than the third angle.

8. The method according to claim 1, characterized in that The determining whether the crystallization interface meets the target condition comprises: Determining the shape of the crystallization interface and the positional relationship between the crystallization interface and the mold to be designed; When the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed, determining that the crystallization interface is adhered to the mold to be designed; When the shape of the crystallization interface satisfies the first shape, or the crystallization interface is adhered to the mold to be designed, determining that the crystallization interface does not satisfy the target condition; When the shape of the crystallization interface satisfies the second shape and the crystallization interface is not adhered to the mold to be designed, determining that the crystallization interface satisfies the target condition; The first shape includes any one of the following: the middle region of the crystallization interface is convex toward the mold to be designed and the edge region is concave toward the gallium oxide crystal, the entire crystallization interface is concave toward the gallium oxide crystal, and the crystallization interface is a plane; The second shape includes the crystallization interface being entirely convex toward the mold to be designed.

9. A mold, characterized in that: The mold is designed by the mold design method for growing gallium oxide crystal by the guided mode method as claimed in any one of claims 1 to 8.

10. A crystal growth furnace, characterized in that: The crystal growth furnace includes the mold according to claim 9.

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