Temperature detection method, device and equipment for insulated gate bipolar transistor

Abstract

The invention provides a temperature detection method, a temperature detection device and temperature detection equipment of an insulated gate bipolar transistor and a computer storage medium. The temperature detection method comprises the following steps: acquiring a heating value of an insulated gate bipolar transistor by using a motor rotating speed and a motor torque; obtaining a first heat conductivity coefficient of each layer of the insulated gate bipolar transistor by using the size parameter of each layer of the insulated gate bipolar transistor; acquiring a second heat conductivity coefficient of the radiator and the cooling liquid by utilizing the water pump rotating speed; calculating a first heat conduction thermal resistance based on the first heat conduction coefficient, and calculating a second heat conduction thermal resistance based on the second heat conduction coefficient; constructing a thermal network of the insulated gate bipolar transistor; and solving the thermal network of the insulated gate bipolar transistor through the calorific value to obtain the real-time temperature of each layer of the insulated gate bipolar transistor. According to the temperature detection method, the temperature information of the insulated gate bipolar transistor is calculated by using the known parameter information, and temperature monitoring can be realized by canceling additional electronic elements such as a temperature sensor and the like.

Description

Technical Field

[0001] The present application relates to the technical field of motor temperature measurement, and in particular to a temperature detection method, a temperature detection device, a temperature detection equipment and a computer storage medium for an insulated gate bipolar transistor. Background Art

[0002] In pure electric vehicles and hybrid vehicles, the role of the driver radiator is to ensure that the temperature rise of the electric drive system is reasonable and can work effectively for a long time. When the temperature of the power module exceeds the rated limit, irreversible damage will occur and it will stop working. The main reason restricting the development of power devices at present is that the junction temperature of the electronic chip is too high during the working process. The packaging layer of IGBT (Insulate-Gate Bipolar Transistor) is welded together by multiple layers of different materials. The temperature rise will cause changes in different materials, resulting in burn-through or cracks, which will cause irreversible damage to the IGBT. Due to the high concentration of heat generated by the IGBT, the 10℃ rule shows that when the device temperature is reduced by 10℃, the reliability of the device will double. Therefore, accurately monitoring the temperature of each layer of the IGBT and using its temperature signal as a signal to control the flow of coolant has become the main means to reduce the thermal failure of the IGBT.

[0003] The chip temperature of the IGBT module is a very important parameter of the power electronic system. Since it is impossible to directly measure the chip temperature when the system is running, it is necessary to use other temperature sensors, such as the NTC resistor built into the IGBT module. According to the real-time value of the NTC resistor, the chip temperature can be indirectly estimated by querying the pre-measured chip temperature-NTC resistor temperature relationship curve. However, the temperature measured by the NTC resistor has a certain hysteresis and cannot accurately reflect the actual temperature of the IGBT. Summary of the invention

[0004] In order to solve the above technical problems, the present application proposes a temperature detection method, a temperature detection device, a temperature detection equipment and a computer storage medium for an insulated gate bipolar transistor.

[0005] In order to solve the above technical problems, the present application proposes a temperature detection method of an insulated gate bipolar transistor, the temperature detection method comprising:

[0006] The heat generated by the insulated gate bipolar transistor is obtained by using the motor speed and the motor torque;

[0007] Using the size parameters of each layer of the insulated gate bipolar transistor, obtaining a first thermal conductivity of each layer of the insulated gate bipolar transistor;

[0008] Using the water pump speed, the second thermal conductivity of the radiator and the coolant is obtained;

[0009] Calculating a first thermal conductivity resistance between layers of the insulated gate bipolar transistor based on the first thermal conductivity, and calculating a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity;

[0010] constructing a thermal network of the insulated gate bipolar transistor using the first thermal conductive resistor and the second thermal conductive resistor;

[0011] The thermal network of the insulated gate bipolar transistor is solved according to the heat generation to obtain the real-time temperature of each layer of the insulated gate bipolar transistor.

[0012] Wherein, the step of obtaining the heat generated by the insulated gate bipolar transistor by using the motor speed and the motor torque includes:

[0013] The corresponding heat generation is searched in the loss table by the motor speed and the motor torque.

[0014] The method of obtaining the second thermal conductivity of the radiator and the coolant by using the water pump speed includes:

[0015] Find the corresponding coolant flow rate in the water pump table according to the water pump speed;

[0016] The coolant flow is subjected to three-dimensional simulation to calculate the second thermal conductivity of the heat sink and the coolant.

[0017] The step of calculating the first thermal resistance between the layers of the insulated gate bipolar transistor based on the first thermal conductivity coefficient includes:

[0018] A first thermal conductivity resistance between the layers of the insulated gate bipolar transistor is calculated based on the first thermal conductivity coefficient and the thermal conductivity area and the inter-layer spacing of the layers of the insulated gate bipolar transistor.

[0019] The step of calculating the second thermal conductivity resistance between the radiator and the coolant based on the second thermal conductivity coefficient includes:

[0020] A second thermal conductivity resistance between the heat sink and the coolant is calculated based on the second thermal conductivity and the heat conduction areas of the heat sink and the coolant.

[0021] Wherein, the use of the first thermal conductive thermal resistor and the second thermal conductive thermal resistor to construct a thermal network of the insulated gate bipolar transistor includes:

[0022] Establishing a first heat conduction differential equation of the insulated gate bipolar transistor module by using the heat generation, the module volume of the insulated gate bipolar transistor module, and the thermal conductivity resistance of the adjacent thermal resistance layer;

[0023] Using the layer volume and thermal conductivity resistance of the adjacent thermal resistance layer and the thermal conductivity resistance of the next thermal resistance layer, a second thermal conduction differential equation of the adjacent thermal resistance layer is established;

[0024] Establishing a third heat conduction differential equation of the last heat resistance layer by using the layer volume, the heat conduction thermal resistance, and the second heat conduction thermal resistance of the last heat resistance layer;

[0025] A thermal network of the insulated gate bipolar transistor is established according to the first heat conduction differential equation, the second heat conduction differential equation, and the third heat conduction differential equation.

[0026] The insulated gate bipolar transistor includes an insulated gate bipolar transistor module and various thermal resistance layers; wherein the thermal resistance layer includes a chip solder layer, an upper copper layer, a liner, a lower copper layer, and a substrate solder layer.

[0027] In order to solve the above technical problems, the present application also proposes a temperature detection device, which includes: a table lookup module, a conversion module, a construction module, and a detection module; wherein,

[0028] The table lookup module is used to obtain the heat generated by the insulated gate bipolar transistor by using the motor speed and the motor torque;

[0029] The table lookup module is used to obtain the first thermal conductivity of each layer of the insulated gate bipolar transistor by using the size parameters of each layer of the insulated gate bipolar transistor;

[0030] The conversion module is used to obtain the second thermal conductivity of the radiator and the coolant by using the water pump speed;

[0031] The conversion module is used to calculate a first thermal conductivity resistance between the layers of the insulated gate bipolar transistor based on the first thermal conductivity, and to calculate a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity;

[0032] The construction module is used to construct a thermal network of the insulated gate bipolar transistor using the first thermal conductive resistor and the second thermal conductive resistor;

[0033] The detection module is used to solve the thermal network of the insulated gate bipolar transistor according to the heat generation, and obtain the real-time temperature of each layer of the insulated gate bipolar transistor.

[0034] In order to solve the above technical problems, the present application also proposes a temperature detection device, which includes a memory and a processor coupled to the memory; wherein the memory is used to store program data, and the processor is used to execute the program data to implement the temperature detection method as described above.

[0035] In order to solve the above technical problems, the present application also proposes a computer storage medium, wherein the computer storage medium is used to store program data, and when the program data is executed by a computer, it is used to implement the above temperature detection method.

[0036] Compared with the prior art, the beneficial effects of the present application are as follows: the temperature detection device uses the motor speed and the motor torque to obtain the heat generated by the insulated gate bipolar transistor; uses the size parameters of each layer of the insulated gate bipolar transistor to obtain the first thermal conductivity of each layer of the insulated gate bipolar transistor; uses the water pump speed to obtain the second thermal conductivity of the radiator and the coolant; based on the first thermal conductivity, the first thermal resistance between each layer of the insulated gate bipolar transistor is calculated, and based on the second thermal conductivity, the second thermal resistance between the radiator and the coolant is calculated; the first thermal resistance and the second thermal resistance are used to construct the thermal network of the insulated gate bipolar transistor; the thermal network of the insulated gate bipolar transistor is solved by the heat generated to obtain the real-time temperature of each layer of the insulated gate bipolar transistor. Through the above-mentioned temperature detection method, the temperature information of the insulated gate bipolar transistor is calculated using known parameter information, and temperature monitoring can be achieved by eliminating additional electronic components such as temperature sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0038] in:

[0039] Figure 1 is a schematic diagram of the location of the IGBT layered materials provided in this application;

[0040] Figure 2 It is a flow chart of an embodiment of a temperature detection method for an insulated gate bipolar transistor provided by the present application;

[0041] Figure 3 It is a schematic diagram of the overall process of the temperature detection method of the insulated gate bipolar transistor provided by the present application;

[0042] Figure 4 is a schematic diagram of the IGBT heat transfer route provided by the present application;

[0043] Figure 5 is a schematic diagram of the thermal network provided by this application;

[0044] Figure 6 yes Figure 2A specific flow chart of step S15 of the temperature detection method for an insulated gate bipolar transistor is shown;

[0045] Figure 7 It is a structural schematic diagram of an embodiment of a temperature detection device provided by the present application;

[0046] Figure 8 It is a structural schematic diagram of an embodiment of a temperature detection device provided by the present application;

[0047] Fig. 9 It is a structural diagram of an embodiment of a computer storage medium provided by the present application. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0049] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0050] The current IGBT temperature measurement technology usually configures negative temperature coefficient (NTC) thermistors in IGBT modules to monitor temperature. These NTC thermistors can be placed inside the IGBT module, on the same DCB (Direct Copper Bonding) as the chip, or on different DCBs. When the NTC and the chip are on the same DCB, the temperature of the NTC will be higher than the temperature of the substrate due to the thermal coupling of the DCB board. If the NTC and the chip are on different DCBs, the NTC is only affected by the heat transferred from the substrate, and its temperature is close to (less than) the temperature of the module substrate. In short, there will be a heat transfer path between the NTC and the IGBT, and the temperature measured by the NTC cannot accurately reflect the actual temperature of the IGBT, and because the NTC cannot be placed directly on the IGBT, the temperature measured by the NTC will have a certain hysteresis.

[0051] In order to solve this problem, the temperature detection method of the insulated gate bipolar transistor provided in the present application cancels the NTC sensor for measuring the temperature of the IGBT, and instead calculates the temperature of the IGBT through known parameter information including but not limited to: motor speed, motor torque, water pump speed and water pump flow

[0052] During the operation of the motor controller, the main heating element is the IGBT module. It is now proposed to use four known signals to calculate the temperature of each layer of the IGBT to replace the temperature signal of the NTC (Negative Temperature coefficient) temperature sensor on the copper substrate. After the IGBT module is heated, the heat will first be transferred to the layered materials below. The layered materials from top to bottom are: chip solder layer, upper copper layer, liner, lower copper layer, substrate solder layer, etc. Figure 1 As shown, Figure 1 This is a schematic diagram of the location of the IGBT layered materials provided in this application. Therefore, the thermal resistance layer of the IGBT module mainly has five layers, namely the chip solder layer, the upper copper layer, the liner, the lower copper layer, the substrate solder layer, and then the heat is conducted to the heat dissipation substrate. The corresponding physical properties of the materials are shown in Table 1 below:

[0053] Table 1 Layered material parameters

[0054]

[0055] Among them, thermal resistance is the resistance encountered by heat during the transfer process. Thermal resistance can directly reflect the heat dissipation performance of the radiator. The smaller the thermal resistance, the better, so that efficient heat dissipation can be achieved. The smaller the thermal resistance, the smaller the resistance encountered by heat during the transfer process, and the stronger the ability to dissipate heat, which can well protect the power module from working; the greater the heat, the greater the resistance encountered by heat during the transfer process, and the weaker the ability to dissipate heat. The heat will accumulate, and when it reaches a certain limit, the power module will be burned.

[0056] Please refer to Figure 2 and Figure 3 , Figure 2 is a flow chart of an embodiment of a temperature detection method for an insulated gate bipolar transistor provided by the present application, Figure 3 It is a schematic diagram of the overall process of the temperature detection method of the insulated gate bipolar transistor provided in the present application.

[0057] The temperature detection method of the insulated gate bipolar transistor of the present application is applied to a temperature detection device, wherein the temperature detection device of the present application can be a server, a terminal device, or a system in which the server and the terminal device cooperate with each other. Accordingly, the various parts included in the temperature detection device, such as various units, subunits, modules, and submodules, can all be set in the server, can all be set in the terminal device, or can be set in the server and the terminal device respectively.

[0058] Furthermore, the above-mentioned server can be hardware or software. When the server is hardware, it can be implemented as a distributed server cluster consisting of multiple servers, or it can be implemented as a single server. When the server is software, it can be implemented as multiple software or software modules, such as software or software modules used to provide distributed servers, or it can be implemented as a single software or software module, which is not specifically limited here.

[0059] like Figure 3 As shown, the temperature detection method of the present application mainly cancels the NTC sensor for measuring the temperature of the IGBT, and instead calculates the temperature of the IGBT through four known parameter information: motor speed, motor torque, water pump speed and water pump flow. The model is built through Simulink (visual simulation tool), the algorithm can be directly written into the controller, and the temperature of the IGBT can be output as a signal.

[0060] like Figure 2 As shown, the specific steps are as follows:

[0061] Step S11: using the motor speed and the motor torque to obtain the heat generated by the insulated gate bipolar transistor.

[0062] In the embodiment of the present application, the temperature detection device looks up the loss map (loss table) through the motor speed and the motor torque to calculate the heat generated by the IGBT.

[0063] Step S12: using the size parameters of each layer of the insulated gate bipolar transistor to obtain a first thermal conductivity of each layer of the insulated gate bipolar transistor.

[0064] In the embodiment of the present application, the temperature detection device calculates the thermal conductivity of each layer of the IGBT through the thermal conductivity of the materials of different layers of the insulated gate bipolar transistor and the size parameters of each layer. The thermal conductivity of each layer of the IGBT can be obtained from the above Table 1, and the size parameters of each layer of the IGBT have been calibrated before leaving the factory.

[0065] Step S13: using the water pump speed to obtain the second thermal conductivity of the radiator and the coolant.

[0066] In the embodiment of the present application, the temperature detection device obtains the coolant flow rate by checking the water pump map (water pump table) through the water pump speed and the water pump flow rate, and calculates the thermal conductivity h of the radiator and the coolant through three-dimensional simulation.

[0067] Step S14: calculating a first thermal conductivity resistance between layers of the insulated gate bipolar transistor based on the first thermal conductivity, and calculating a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity.

[0068] In the embodiment of the present application, the temperature detection device further calculates the thermal resistance of each layer of the IGBT according to the thermal conductivity of each layer of the IGBT, and the thermal resistance of the radiator and the coolant can be calculated by the thermal conductivity h of the radiator and the coolant.

[0069] Specifically, the thermal resistance between the IGBT module and the copper layer is:

[0070] Thermal resistance of copper layer and ceramic layer:

[0071] Thermal resistance of ceramic layer and copper layer:

[0072] Thermal resistance between copper layer and substrate:

[0073] Thermal resistance between substrate and thermal grease:

[0074] Thermal resistance of thermal grease and heat sink:

[0075] Thermal resistance between heat sink and coolant:

[0076] Among them, d1 is the distance between the IGBT module and the copper layer; d2 is the distance between the copper layer and the ceramic layer; d3 is the distance between the ceramic layer and the copper layer; d4 is the distance between the copper layer and the substrate; d5 is the distance between the substrate and the thermal grease; d6 is the distance between the thermal grease and the heat sink.

[0077] Among them, A1 is the thermal conductivity area between the IGBT module and the copper layer; A2 is the thermal conductivity area between the copper layer and the ceramic layer; A3 is the thermal conductivity area between the ceramic layer and the copper layer; A4 is the thermal conductivity area between the copper layer and the substrate; A5 is the thermal conductivity area between the substrate and the thermal grease; A6 is the thermal conductivity area between the thermal grease and the heat sink; A7 is the thermal conductivity area between the heat sink and the coolant.

[0078] Step S15: constructing a thermal network of the insulated gate bipolar transistor using the first thermal conductive resistor and the second thermal conductive resistor.

[0079] In the embodiment of the present application, the temperature detection device calculates the temperature of the IGBT module, the copper layer, the ceramic layer, the copper layer, the substrate, the thermal conductive silicone, and the heat sink through a thermal network method.

[0080] In the embodiment of the present application, the thermal network involved in step S15 is described in detail in detail. Figure 4 , Figure 5 and Figure 6 ,in, Figure 4 is a schematic diagram of the IGBT heat transfer route provided by this application, Figure 5 is a schematic diagram of the thermal network provided by this application, Figure 6 yes Figure 2 The specific flow chart of step S15 of the temperature detection method of the insulated gate bipolar transistor is shown.

[0081] like Figure 4 As shown in the figure, the heat generated by the loss of the IGBT component generally needs to pass through 5 layers of material to reach the heat sink. In order to calculate the temperature of each layer, the thermal network method is mainly used. Figure 5 As shown, T0-IGBT module temperature, T1-upper copper layer temperature, T2-liner ceramic layer temperature, T3-lower copper layer temperature, T4-substrate solder layer temperature, T5-thermal grease temperature, T6-water cooling plate temperature, Tw-coolant temperature, the thermal resistance between each heat-conducting component is related to the physical properties of the heat-conducting component, and the physical properties of each layer are shown in Table 1.

[0082] After the physical properties and thermal conductivity and thermal resistance are known, and the temperature Tw of the coolant is known, the temperature detection device can be Figure 6 The calculation method shown calculates the temperature information of each layer.

[0083] like Figure 6 As shown, the specific steps are as follows:

[0084] Step S151: establishing a first thermal conduction differential equation of the insulated gate bipolar transistor module by using the heat generation, the module volume of the insulated gate bipolar transistor module, and the thermal conduction resistance of the adjacent thermal resistance layer.

[0085] Step S152: using the layer volume and thermal conductivity resistance of the adjacent thermal resistance layer and the thermal conductivity resistance of the next thermal resistance layer, a second thermal conduction differential equation of the adjacent thermal resistance layer is established.

[0086] Step S153: establishing a third thermal conduction differential equation of the last thermal resistance layer by using the layer volume, thermal conduction resistance, and the second thermal conduction resistance of the last thermal resistance layer.

[0087] Step S154: establishing a thermal network of the insulated gate bipolar transistor according to the first heat conduction differential equation, the second heat conduction differential equation, and the third heat conduction differential equation.

[0088] In the embodiment of the present application, the IGBT module temperature T0:

[0089] Copper layer T1:

[0090] Ceramic layer temperature T2:

[0091] Copper layer T3:

[0092] Substrate soldering temperature T4:

[0093] Thermal grease temperature T5:

[0094] The water cooling plate temperature T6 can be monitored in real time and can be obtained in real time through other temperature sensors, or the water cooling plate temperature can be controlled by a controller.

[0095] Among them, V0 is the volume of the IGBT module; V1 is the volume of the copper layer; V2 is the volume of the ceramic layer; V3 is the volume of the copper layer; V4 is the volume of the substrate solder layer; and V5 is the volume of the thermal grease layer.

[0096] Step S16: solving the thermal network of the IGBT by the heat generation to obtain the real-time temperature of each layer of the IGBT.

[0097] In the embodiment of the present application, the temperature detection device uses Simulink to build a readable temperature model, thereby realizing accurate monitoring of the temperature of each layer in the IGBT.

[0098] In the present application, the temperature detection device uses the motor speed and the motor torque to obtain the heat generated by the insulated gate bipolar transistor; uses the size parameters of each layer of the insulated gate bipolar transistor to obtain the first thermal conductivity of each layer of the insulated gate bipolar transistor; uses the water pump speed to obtain the second thermal conductivity of the radiator and the coolant; based on the first thermal conductivity, the first thermal resistance between the layers of the insulated gate bipolar transistor is calculated, and based on the second thermal conductivity, the second thermal resistance between the radiator and the coolant is calculated; the first thermal resistance and the second thermal resistance are used to construct the thermal network of the insulated gate bipolar transistor; the thermal network of the insulated gate bipolar transistor is solved by the heat generated to obtain the real-time temperature of each layer of the insulated gate bipolar transistor. Through the above-mentioned temperature detection method, the temperature information of the insulated gate bipolar transistor is calculated using known parameter information, and temperature monitoring can be achieved by eliminating additional electronic components such as temperature sensors.

[0099] The temperature detection method of the present application eliminates the NTC sensor for measuring the temperature of the IGBT, thereby reducing costs.

[0100] The temperature detection method of the present application calculates the temperature of the IGBT through four known parameter information: motor speed, motor torque, water pump speed and water pump flow, and the model is built through Simulink, the algorithm can be directly written into the controller, and the temperature of the IGBT can be output as a signal. The reliability of the IGBT temperature signal and the responsiveness of its signal can be improved.

[0101] The temperature detection method of the present application can calculate the temperature of each layer between the IGBT and the coolant, and monitor it, thereby increasing the safety and reliability of electronic components during operation.

[0102] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0103] In order to implement the above temperature detection method, the present application also proposes a temperature detection device, for details, please refer to Figure 7 , Figure 7 It is a structural schematic diagram of an embodiment of a temperature detection device provided in the present application.

[0104] The temperature detection device 500 of this embodiment includes: a table lookup module 51 , a conversion module 52 , a construction module 53 , and a detection module 54 .

[0105] The table lookup module 51 is used to obtain the heat generated by the insulated gate bipolar transistor using the motor speed and the motor torque.

[0106] The table lookup module 51 is used to obtain the first thermal conductivity of each layer of the insulated gate bipolar transistor by using the size parameters of each layer of the insulated gate bipolar transistor.

[0107] The conversion module 52 is used to obtain the second thermal conductivity of the radiator and the coolant by using the water pump rotation speed.

[0108] The conversion module 52 is used to calculate a first thermal conductivity resistance between layers of the insulated gate bipolar transistor based on the first thermal conductivity, and to calculate a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity.

[0109] The construction module 53 is used to construct a thermal network of the insulated gate bipolar transistor by using the first thermal conductive resistor and the second thermal conductive resistor.

[0110] The detection module 54 is used to solve the thermal network of the IGBT according to the heat generation, and obtain the real-time temperature of each layer of the IGBT.

[0111] In order to implement the above temperature detection method, this application also proposes a temperature detection device, please refer to Figure 8 , Figure 8 It is a structural schematic diagram of an embodiment of a temperature detection device provided by the present application.

[0112] The temperature detection device 400 of this embodiment includes a processor 41 , a memory 42 , an input / output device 43 , and a bus 44 .

[0113] The processor 41 , the memory 42 , and the input / output device 43 are respectively connected to the bus 44 . The memory 42 stores program data. The processor 41 is used to execute the program data to implement the temperature detection method described in the above embodiment.

[0114] In the embodiment of the present application, the processor 41 may also be referred to as a CPU (Central Processing Unit). The processor 41 may be an integrated circuit chip having the ability to process signals. The processor 41 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other programmable logic devices, discrete gates or transistor logic devices, or discrete hardware components. A general-purpose processor may be a microprocessor or the processor 41 may also be any conventional processor, etc.

[0115] This application also provides a computer storage medium, please continue to refer to Fig. 9 , Fig. 9 1 is a schematic diagram of the structure of an embodiment of a computer storage medium provided in the present application. The computer storage medium 600 stores a computer program 61. When the computer program 61 is executed by a processor, it is used to implement the temperature detection method of the above embodiment.

[0116] When the embodiments of the present application are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk.

[0117] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A temperature detection method for an insulated gate bipolar transistor, characterized in that: The temperature detection method comprises: The heat generated by the insulated gate bipolar transistor is obtained by using the motor speed and the motor torque; Using the size parameters of each layer of the insulated gate bipolar transistor, obtaining a first thermal conductivity of each layer of the insulated gate bipolar transistor; Using the water pump speed, the second thermal conductivity of the radiator and the coolant is obtained; Calculating a first thermal conductivity resistance between layers of the insulated gate bipolar transistor based on the first thermal conductivity, and calculating a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity; constructing a thermal network of the insulated gate bipolar transistor using the first thermal conductive resistor and the second thermal conductive resistor; The thermal network of the insulated gate bipolar transistor is solved according to the heat generation to obtain the real-time temperature of each layer of the insulated gate bipolar transistor.

2. The temperature detection method according to claim 1, characterized in that: The method of obtaining the heat generated by the insulated gate bipolar transistor by using the motor speed and the motor torque includes: The corresponding heat generation is searched in the loss table by the motor speed and the motor torque.

3. The temperature detection method according to claim 1 or 2, characterized in that: The method of obtaining the second thermal conductivity of the radiator and the coolant by using the water pump speed includes: Find the corresponding coolant flow rate in the water pump table according to the water pump speed; The coolant flow is subjected to three-dimensional simulation to calculate the second thermal conductivity of the heat sink and the coolant.

4. The temperature detection method according to claim 1, characterized in that: The step of calculating a first thermal resistance between layers of the insulated gate bipolar transistor based on the first thermal conductivity coefficient comprises: A first thermal conductivity resistance between the layers of the insulated gate bipolar transistor is calculated based on the first thermal conductivity coefficient and the thermal conductivity area and the inter-layer spacing of the layers of the insulated gate bipolar transistor.

5. The temperature detection method according to claim 1 or 4, characterized in that: The calculating the second thermal conductivity resistance between the radiator and the coolant based on the second thermal conductivity coefficient comprises: A second thermal conductivity resistance between the heat sink and the coolant is calculated based on the second thermal conductivity and the heat conduction areas of the heat sink and the coolant.

6. The temperature detection method according to claim 1, characterized in that: The method of using the first thermal conductive thermal resistor and the second thermal conductive thermal resistor to construct a thermal network of the insulated gate bipolar transistor comprises: Establishing a first heat conduction differential equation of the insulated gate bipolar transistor module by using the heat generation, the module volume of the insulated gate bipolar transistor module, and the thermal conductivity resistance of the adjacent thermal resistance layer; Using the layer volume and thermal conductivity resistance of the adjacent thermal resistance layer and the thermal conductivity resistance of the next thermal resistance layer, a second thermal conduction differential equation of the adjacent thermal resistance layer is established; Establishing a third heat conduction differential equation of the last heat resistance layer by using the layer volume, the heat conduction thermal resistance, and the second heat conduction thermal resistance of the last heat resistance layer; A thermal network of the insulated gate bipolar transistor is established according to the first heat conduction differential equation, the second heat conduction differential equation, and the third heat conduction differential equation.

7. The temperature detection method according to claim 6, characterized in that: The insulated gate bipolar transistor includes an insulated gate bipolar transistor module and various thermal resistance layers; wherein the thermal resistance layer includes a chip solder layer, an upper copper layer, a liner, a lower copper layer, and a substrate solder layer.

8. A temperature detection device, characterized in that: The temperature detection device comprises: a table lookup module, a conversion module, a construction module, and a detection module; wherein, The table lookup module is used to obtain the heat generated by the insulated gate bipolar transistor by using the motor speed and the motor torque; The table lookup module is used to obtain the first thermal conductivity of each layer of the insulated gate bipolar transistor by using the size parameters of each layer of the insulated gate bipolar transistor; The conversion module is used to obtain the second thermal conductivity of the radiator and the coolant by using the water pump speed; The conversion module is used to calculate a first thermal conductivity resistance between the layers of the insulated gate bipolar transistor based on the first thermal conductivity, and to calculate a second thermal conductivity resistance between the heat sink and the coolant based on the second thermal conductivity; The construction module is used to construct a thermal network of the insulated gate bipolar transistor using the first thermal conductive resistor and the second thermal conductive resistor; The detection module is used to solve the thermal network of the insulated gate bipolar transistor according to the heat generation, and obtain the real-time temperature of each layer of the insulated gate bipolar transistor.

9. A temperature detection device, characterized in that: The temperature detection device includes a memory and a processor coupled to the memory; The memory is used to store program data, and the processor is used to execute the program data to implement the temperature detection method according to any one of claims 1 to 7.

10. A computer storage medium, characterized in that: The computer storage medium is used to store program data, and when the program data is executed by a computer, it is used to implement the temperature detection method according to any one of claims 1 to 7.

Images