Near electric field induction device and method for adjusting distance precision based on resistor

Abstract

The invention provides a near electric field induction device based on resistance adjustment distance precision. The near electric field induction device comprises an electric field intensity inductor, a resistance range switching unit, a current acquisition unit, an input and output unit, an alarm unit and an MCU. Before measurement, the input and output unit inputs the voltage level or / and the safety distance of a high-voltage power grid subject matter so as to obtain a current threshold value and a driving voltage in the MCU, and the MCU drives a specified MOS switching tube to be switched on based on the driving voltage so as to start a corresponding resistance adjusting circuit in the resistance range switching unit to work; during measurement, the electric field intensity sensor gets close to a high-voltage power grid subject matter to acquire electric field intensity in real time so as to generate a voltage signal, the voltage signal is converted into a current signal through the started resistance adjusting circuit, the current acquisition unit acquires the current signal and sends the current signal to the MCU, and the MCU generates alarm information and sends the alarm information to the alarm unit to give an alarm when determining that the current at a certain moment is greater than or equal to a current threshold value. According to the invention, the safety distance can be detected for high-voltage power grids with different voltage levels, and accidents can be effectively prevented.

Description

Technical Field

[0001] The present invention relates to the technical field of power systems, and in particular to a near electric field sensing device and method for adjusting distance accuracy based on resistance. Background Art

[0002] With the development of society, there has been a substantial increase in the renovation, construction or maintenance of various power grids. During the construction of the above projects, high-voltage power grids usually use infrared, video, radar and other equipment to detect safety distances to prevent accidents.

[0003] However, considering that there is a near electric field as an induction source at the high-voltage power grid site, the existing technology lacks technical means to use the near electric field as an induction source to detect the safe distance. In particular, the radiation intensity of the near electric field of different voltage levels of the high-voltage power grid (such as 10KV, 110KV, 220KV, 500KV, etc.) is different, which needs further research. Summary of the invention

[0004] The technical problem to be solved by the embodiments of the present invention is to provide a near-electric field sensing device and method based on resistance adjustment of distance accuracy, which can not only use the near-electric field as an induction source to detect the safe distance, but also detect the safe distance for high-voltage power grids of different voltage levels, thereby effectively preventing accidents.

[0005] In order to solve the above technical problems, an embodiment of the present invention provides a near electric field sensing device based on resistance adjustment distance accuracy, including an electric field strength sensor, a resistance range switching unit, a current acquisition unit, an input and output unit, an alarm unit and an MCU; wherein,

[0006] The resistance range switching unit is connected to the electric field strength sensor, the current acquisition unit and the MCU, and is formed by a plurality of resistance adjustment circuits connected in parallel; wherein each resistance adjustment circuit comprises a MOS switch tube and a resistor; the gate of each MOS switch tube is connected to the MCU, the source is connected to the current acquisition unit, and the drain is connected to the electric field strength sensor through the connected resistor; the Vgs conduction voltage range between any two MOS switch tubes is different; the resistance value of each resistor is mapped to the size of a corresponding voltage level and is pre-defined;

[0007] The MCU is also connected to the current acquisition unit, the input and output unit and the alarm unit;

[0008] The input-output unit is used to receive and display the voltage level to be measured or / and its corresponding safety distance input by the user before detecting the high-voltage power grid target, and further report the voltage level to be measured or / and its corresponding safety distance to the MCU; wherein the voltage level to be measured is equal to the current voltage level of the high-voltage power grid target, and is equal to the voltage level mapped by the resistor in a certain resistance adjustment circuit in the resistance range switching unit;

[0009] The MCU is used to obtain the corresponding current threshold and driving voltage by looking up a table before detecting the target object of the high-voltage power grid according to the voltage level to be measured and / or its corresponding safety distance reported by the input-output unit, and to generate a corresponding driving signal based on the driving voltage obtained by looking up the table and send it to the designated MOS switch tube to drive it to be turned on, so as to drive the corresponding resistance adjustment circuit in the resistance range switching unit to work; and, when detecting the target object of the high-voltage power grid, receive the current collected in real time by the current collection unit, and when determining that the current received at a certain moment is greater than or equal to the current threshold obtained by looking up the table, generate an alarm message and send it to the alarm unit and the input-output unit; wherein the voltage of the driving signal is within the Vgs conduction voltage range of the designated MOS switch tube;

[0010] The electric field strength sensor is used to obtain the electric field strength in real time when detecting the high-voltage power grid target object to generate a corresponding voltage signal, and send it to the resistance range switching unit;

[0011] The resistance range switching unit is used to turn on the specified MOS switch tube based on the driving signal sent by the MCU before detecting the high-voltage power grid target, so as to enable the resistance adjustment circuit where the specified MOS tube is located to work; and when detecting the high-voltage power grid target, convert the voltage signal generated by the electric field strength sensor into a current signal through the resistor in the enabled resistance adjustment circuit, and further send it to the current acquisition unit;

[0012] The current acquisition unit is used to collect in real time the current signal after the resistance conversion in the enabled resistance adjustment circuit in the resistance range switching unit when detecting the high-voltage power grid target object.

[0013] Among them, the resistance adjustment circuit in the resistance range switching unit and its mapped voltage levels are both six; among them,

[0014] The resistance values ​​of the resistors in the six resistance adjustment circuits are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters respectively.

[0015] Wherein, the MCU is a SoC chip with multiple pins; wherein,

[0016] The pins J1 to J6 of the MCU are respectively connected to the gates of the MOS tubes in the six resistance adjustment circuits, the pin J7 is connected to the current acquisition unit, the pin 8 is connected to the input and output unit, and the pin J9 is connected to the alarm unit.

[0017] Wherein, the input and output unit is a touch liquid crystal screen capable of input and output.

[0018] Wherein, the alarm unit is a buzzer and / or an indicator light.

[0019] Wherein, the current acquisition unit is composed of an AD module and a DSP chip.

[0020] Wherein, the high-voltage power grid target is high-voltage wires or high-voltage equipment.

[0021] The embodiment of the present invention further provides a near electric field sensing method based on adjusting distance accuracy based on resistance, which is implemented on the aforementioned near electric field sensing device based on adjusting distance accuracy based on resistance, and the method comprises the following steps:

[0022] Before detecting the high-voltage power grid target, the near-electric field sensing device receives the voltage level to be measured and / or its corresponding safety distance input by the user to determine the current threshold and automatically enable the resistance adjustment circuit corresponding to the voltage level to be measured in the resistance range switching unit; wherein the voltage level to be measured is equal to the current voltage level of the high-voltage power grid target, and is equal to the voltage level mapped by the resistance in a resistance adjustment circuit in the resistance range switching unit;

[0023] When detecting the high-voltage power grid target, the near-electric field sensing device moves its position in real time to obtain the electric field strength, and after generating a corresponding voltage signal, it is converted into a current signal by the automatically enabled resistance adjustment circuit for current extraction, and when it is determined that the corresponding extracted current at the moving position at a certain moment is greater than or equal to the current threshold, an alarm is issued to realize a warning of the distance between it and the high-voltage power grid target.

[0024] Among them, the resistance adjustment circuit in the resistance range switching unit and its mapped voltage levels are both six; among them,

[0025] The resistance values ​​of the resistors in the six resistance adjustment circuits are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters respectively.

[0026] Wherein, the high-voltage power grid target is high-voltage wires or high-voltage equipment.

[0027] Implementing the embodiments of the present invention has the following beneficial effects:

[0028] Before detecting the target object of the high-voltage power grid, the near-electric field sensing device of the present invention determines the current threshold and automatically enables the resistance adjustment circuit corresponding to the voltage level to be measured according to the voltage level to be measured and / or its corresponding safety distance, and obtains the electric field strength by detecting the real-time moving position, and converts the corresponding voltage signal into a current signal through the resistance adjustment circuit for current extraction. If it is determined that the extracted current is greater than or equal to the current threshold, an alarm is issued to warn the distance between it and the target object of the high-voltage power grid, so that not only can the near-electric field be used as an induction source to detect the safety distance, but also the safety distance can be detected for high-voltage power grids of different voltage levels, effectively preventing accidents. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, without paying creative labor, other drawings obtained based on these drawings still belong to the scope of the present invention.

[0030] Figure 1 A schematic diagram of the structure of a near electric field sensing device for adjusting distance accuracy based on resistance provided in an embodiment of the present invention;

[0031] Figure 2 The present invention provides a flowchart of a near electric field sensing method for adjusting distance accuracy based on resistance according to an embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings.

[0033] The inventors found that according to the radiation intensity theory: I = P / (4πr 2)①; where I is the received radiation intensity, P is the total power or energy flow rate emitted by the radiation source (assuming it is emitted uniformly in all directions), and r is the distance from the receiving point to the radiation source;

[0034] According to electromagnetic theory: P = SE②; where S is the radiation field strength; E is the electric field strength;

[0035] According to the electric field strength theory: E = F / q③; where F is the electric field force; q is the charge;

[0036] According to Coulomb's law, F = kQq / r 2 ④; where k is the Coulomb constant; Q and q are the charges of the two point charges respectively; r is the center distance between the two charges (which can be understood as the distance from the receiving point to the radiation source in formula ①);

[0037] At the same time, refer to the capacitance formula: C = Q / U⑤; where C is capacitance; U is voltage;

[0038] From this, we can get the formula: I = SkCU / (4πr 2 )⑥.

[0039] Therefore, based on formula ⑥, it can be concluded that the closer r is to the radiation source, the greater the received radiation intensity I; the greater the voltage U level of the radiation source, the greater the received radiation intensity I. Therefore, at a specified distance r, the greater the voltage level (such as 10KV, 110KV, 220KV and 500KV, etc.) of the radiation source (such as a high-voltage power grid), the greater the received radiation intensity I.

[0040] At this time, for the receiving end of the induced electric field radiation, according to the relationship between the electric field strength and the voltage: E = U / d⑦; where d is the vertical distance along the direction of the electric field line;

[0041] And, according to Ohm's law formula: i = U / R⑧; where i is current and R is resistance;

[0042] From this, we can get the formula: E=iR / d⑨.

[0043] Therefore, based on formula 9, we can obtain the relationship that the electric field strength E is proportional to the resistance R, and further obtain the relationship that the received radiation intensity I is proportional to the resistance R.

[0044] Based on the above findings, the inventors have concluded that the larger the voltage level (such as 10KV, 110KV, 220KV and 500KV, etc.) of the radiation source (such as high-voltage power grid), the larger the R resistance on the receiving end. In view of the above conclusions, the inventors have proposed a near-field sensing device with adjustable resistance to detect high-voltage power grid targets of different voltage levels, so as to effectively prevent accidental entry into the safe distance of the high-voltage power grid target and ensure construction safety.

[0045] like Figure 1 As shown in the figure, a near electric field sensing device based on resistance adjustment distance accuracy is proposed in an embodiment of the present invention, which is installed on an operating device (such as a crane boom, etc.) at a construction site, and includes an electric field strength sensor 1, a resistance range switching unit 2, a current acquisition unit 3, an input and output unit 4, an alarm unit 5 and an MCU 6; wherein,

[0046] The resistance range switching unit 2 is connected to the electric field strength sensor 1, the current acquisition unit 3 and the MCU6, and is formed by a plurality of resistance adjustment circuits 21 connected in parallel; wherein each resistance adjustment circuit 21 includes a MOS switch tube 211 and a resistor 212; the gate G of each MOS switch tube 211 is connected to the MCU6, the source S is connected to the current acquisition unit 3, and the drain D is connected to the electric field strength sensor 1 through the connected resistor 212; the Vgs conduction voltage range (i.e., the start threshold voltage) between any two MOS switch tubes 211 is different; the resistance value of each resistor 212 is large The small average is mapped to the size of a corresponding voltage level and is predefined; in an example, the resistance adjustment circuit 21 in the resistance range switching unit 2 and the voltage levels mapped thereto are six; the resistance values ​​of the resistors 212 in the six resistance adjustment circuits 21 are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ, respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV, respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters, respectively;

[0047] The MCU 6 is also connected to the current acquisition unit 3 , the input and output unit 4 and the alarm unit 5 .

[0048] In an example, MCU6 is a SoC chip with multiple pins, which is connected to the gate G of each MOS tube 211 in the six resistance adjustment circuits 21 through pins J1 to J6, pin J7 is connected to the current acquisition unit 3, pin J8 is connected to the input and output unit 4, and pin J9 is connected to the alarm unit 5.

[0049] The electric field strength sensor 1 is a MEMS electric field sensor. The resistance range switching unit 2 is an integrated board. The current acquisition unit 3 is composed of an AD module and a DSP chip. The input and output unit 4 is a touch LCD screen capable of input and output. The alarm unit 5 is a buzzer and / or an indicator light.

[0050] First, before detecting a high-voltage power grid target (not shown, such as a high-voltage wire or a high-voltage device), the input-output unit 4 is used to receive and display the voltage level to be measured and / or its corresponding safety distance input by the user, and further report the voltage level to be measured and / or its corresponding safety distance to the MCU6; wherein the voltage level to be measured is equivalent to the current voltage level of the high-voltage power grid target, and is equivalent to the voltage level mapped by the resistor 212 in a certain resistance adjustment circuit 21 in the resistance range switching unit 2; in an example, the user inputs the voltage level to be measured of 110KV and / or a safety distance of 3 meters through the input-output unit 4.

[0051] At this time, before detecting the high-voltage power grid target, MCU6 is used to obtain the corresponding current threshold and driving voltage according to the voltage level to be measured reported by the input-output unit 4 or / and its corresponding safety distance, and based on the driving voltage obtained by the table lookup, generate a corresponding driving signal and send it to the designated MOS switch tube 211 to drive it to turn on, so as to drive the corresponding resistance adjustment circuit 21 in the resistance range switching unit 2 to work; wherein, the voltage of the driving signal is within the Vgs conduction voltage range of the designated MOS switch tube 211. It should be noted that MCU6 can also perform data communication with each MOS tube 211, the current acquisition unit 3, the input-output unit 4 and the alarm unit 5 by allocating different channels, so that the driving signal generated by MCU6 each time can select the corresponding channel to be allocated to the designated MOS tube 211. At the same time, MCU6 also pre-defines a mapping table corresponding to the current threshold, driving voltage, voltage level and / or safety distance for quick table lookup; at this time, each voltage level and / or safety distance is assigned a corresponding current threshold and driving voltage, and each driving voltage is designed according to the Vgs turn-on voltage of the corresponding MOS switch tube 211 and is unique.

[0052] At this time, the resistance range switching unit 2 is used to turn on the specified MOS switch tube 211 based on the driving signal sent by the MCU6 to enable the resistance adjustment circuit 21 where the specified MOS tube 211 is located to work.

[0053] Secondly, when detecting a target object in a high-voltage power grid, the electric field strength sensor 1 is used to obtain the electric field strength in real time to generate a corresponding voltage signal and send it to the resistance range switching unit 2.

[0054] At this time, the resistance range switching unit 2 is also used to convert the voltage signal generated by the electric field strength sensor 1 into a current signal through the resistor 212 in the enabled resistance adjustment circuit 21 , and further send it to the current collection unit 3 .

[0055] At this time, the current acquisition unit 3 is used to collect the current signal converted by the resistor 212 in the enabled resistance adjustment circuit 21 in the resistance range switching unit 2 in real time.

[0056] At this time, MCU6 is also used to receive the current collected by the current collection unit 3 in real time, and when it is determined that the current received at a certain moment is greater than or equal to the current threshold obtained by looking up the table, it generates an alarm message and sends it to the alarm unit 5 and the input and output unit 4.

[0057] The alarm unit 5 is used to generate an alarm when receiving the alarm information sent by the MCU 6.

[0058] The input and output unit is also used to receive and display the alarm information sent by MCU6.

[0059] Taking the construction of a crane on a 110KV high-voltage power line as an example, the application scenario of a near-field sensing device for adjusting distance accuracy based on resistance provided by an embodiment of the present invention is further described as follows:

[0060] Before detecting the 110KV high-voltage wire, first, turn on the near-field sensing device of the present invention, and input the voltage level of 110KV or / and the safety distance of 5 meters into the near-field sensing device of the present invention. At this time, the near-field sensing device will generate a current threshold A3 for subsequent current discrimination, and automatically enable the resistance adjustment circuit where the resistance value is 240KΩ. Then, fix the near-field sensing device of the present invention to the top of the crane boom.

[0061] When detecting 110KV high-voltage wires, first confirm that the near-field sensing device of the present invention has been securely fixed on the top of the crane boom, and then drive the crane boom to move toward the 110KV high-voltage wire. At this time, the near-field sensing device of the present invention will move with the crane boom, and capture the electric field strength generated by the radiation of the 110KV high-voltage wire in real time, and further convert it into a corresponding current through a resistance adjustment circuit where the resistance value is 240KΩ. The closer the near-field sensing device of the present invention is to the 110KV high-voltage wire, the greater the current generated. Once the current generated is greater than the current threshold A3 previously generated, an alarm will be immediately sounded, thereby prompting the near-field sensing device of the present invention and the top of the crane boom have entered the safe distance of 5 meters of the 110KV high-voltage wire, and the crane boom needs to be withdrawn to a place outside the safe distance of 5 meters for construction to ensure construction safety.

[0062] like Figure 2 As shown, a near electric field sensing method based on adjusting distance accuracy by resistors is provided in an embodiment of the present invention, which is implemented on a near electric field sensing device based on adjusting distance accuracy by resistors in an embodiment of the present invention, and the method comprises the following steps:

[0063] Step S1, before detecting the high-voltage power grid target, the near-electric field sensing device receives the voltage level to be measured and / or its corresponding safety distance input by the user to determine the current threshold and automatically enable the resistance adjustment circuit corresponding to the voltage level to be measured in the resistance range switching unit; wherein the voltage level to be measured is equal to the current voltage level of the high-voltage power grid target, and is equal to the voltage level mapped by the resistance in a resistance adjustment circuit in the resistance range switching unit;

[0064] Step S2, when the near-electric field sensing device detects the high-voltage power grid target, it moves in real time to obtain the electric field strength, and after generating a corresponding voltage signal, it converts it into a current signal through the automatically enabled resistance adjustment circuit for current extraction, and when it is determined that the corresponding extracted current at the moving position at a certain moment is greater than or equal to the current threshold, an alarm is issued to realize a warning of the distance between it and the high-voltage power grid target.

[0065] Among them, the resistance adjustment circuit in the resistance range switching unit and its mapped voltage levels are both six; among them,

[0066] The resistance values ​​of the resistors in the six resistance adjustment circuits are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters respectively.

[0067] Wherein, the high-voltage power grid target is high-voltage wires or high-voltage equipment.

[0068] Implementing the embodiments of the present invention has the following beneficial effects:

[0069] Before detecting the target object of the high-voltage power grid, the near-electric field sensing device of the present invention determines the current threshold and automatically enables the resistance adjustment circuit corresponding to the voltage level to be measured according to the voltage level to be measured and / or its corresponding safety distance, and obtains the electric field strength by detecting the real-time moving position, and converts the corresponding voltage signal into a current signal through the resistance adjustment circuit for current extraction. If it is determined that the extracted current is greater than or equal to the current threshold, an alarm is issued to warn the distance between it and the target object of the high-voltage power grid, so that not only can the near-electric field be used as an induction source to detect the safety distance, but also the safety distance can be detected for high-voltage power grids of different voltage levels, effectively preventing accidents.

[0070] The above disclosure is only the preferred embodiment of the present invention, which certainly cannot be used to limit the scope of the present invention. Therefore, equivalent changes made according to the claims of the present invention are still within the scope of the present invention.

Claims

1. A near electric field sensing device based on adjusting distance accuracy by resistance, characterized in that: It includes an electric field strength sensor, a resistance range switching unit, a current acquisition unit, an input and output unit, an alarm unit and an MCU; wherein, The resistance range switching unit is connected to the electric field strength sensor, the current acquisition unit and the MCU, and is formed by a plurality of resistance adjustment circuits connected in parallel; wherein each resistance adjustment circuit comprises a MOS switch tube and a resistor; the gate of each MOS switch tube is connected to the MCU, the source is connected to the current acquisition unit, and the drain is connected to the electric field strength sensor through the connected resistor; the Vgs conduction voltage range between any two MOS switch tubes is different; the resistance value of each resistor is mapped to the size of a corresponding voltage level and is pre-defined; The MCU is also connected to the current acquisition unit, the input and output unit and the alarm unit; The input-output unit is used to receive and display the voltage level to be measured or / and its corresponding safety distance input by the user before detecting the high-voltage power grid target, and further report the voltage level to be measured or / and its corresponding safety distance to the MCU; wherein the voltage level to be measured is equal to the current voltage level of the high-voltage power grid target, and is equal to the voltage level mapped by the resistor in a certain resistance adjustment circuit in the resistance range switching unit; The MCU is used to obtain the corresponding current threshold and driving voltage by looking up a table before detecting the target object of the high-voltage power grid according to the voltage level to be measured and / or its corresponding safety distance reported by the input-output unit, and to generate a corresponding driving signal based on the driving voltage obtained by looking up the table and send it to the designated MOS switch tube to drive it to be turned on, so as to drive the corresponding resistance adjustment circuit in the resistance range switching unit to work; and, when detecting the target object of the high-voltage power grid, receive the current collected in real time by the current collection unit, and when determining that the current received at a certain moment is greater than or equal to the current threshold obtained by looking up the table, generate an alarm message and send it to the alarm unit and the input-output unit; wherein the voltage of the driving signal is within the Vgs conduction voltage range of the designated MOS switch tube; The electric field strength sensor is used to obtain the electric field strength in real time when detecting the high-voltage power grid target object to generate a corresponding voltage signal, and send it to the resistance range switching unit; The resistance range switching unit is used to turn on the specified MOS switch tube based on the driving signal sent by the MCU before detecting the high-voltage power grid target, so as to enable the resistance adjustment circuit where the specified MOS tube is located to work; and when detecting the high-voltage power grid target, convert the voltage signal generated by the electric field strength sensor into a current signal through the resistor in the enabled resistance adjustment circuit, and further send it to the current acquisition unit; The current acquisition unit is used to collect in real time the current signal after the resistance conversion in the enabled resistance adjustment circuit in the resistance range switching unit when detecting the high-voltage power grid target.

2. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 1, characterized in that: The resistance adjustment circuit in the resistance range switching unit and its mapped voltage levels are both six; wherein, The resistance values ​​of the resistors in the six resistance adjustment circuits are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters respectively.

3. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 2, characterized in that: The MCU is a SoC chip with multiple pins; wherein, The pins J1 to J6 of the MCU are respectively connected to the gates of the MOS tubes in the six resistance adjustment circuits, the pin J7 is connected to the current acquisition unit, the pin 8 is connected to the input and output unit, and the pin J9 is connected to the alarm unit.

4. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 3, characterized in that: The input-output unit is a touch liquid crystal screen capable of input and output.

5. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 4, characterized in that: The alarm unit is a buzzer and / or an indicator light.

6. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 5, characterized in that: The current acquisition unit is composed of an AD module and a DSP chip.

7. The near electric field sensing device based on adjusting distance accuracy by resistance as claimed in claim 6, characterized in that: The high-voltage power grid object is a high-voltage wire or a high-voltage device.

8. A near electric field sensing method based on adjusting distance accuracy by resistance, characterized in that: The method is implemented on the near electric field sensing device for adjusting distance accuracy based on resistance as claimed in claim 7, and the method comprises the following steps: Before detecting the high-voltage power grid target, the near-electric field sensing device receives the voltage level to be measured and / or its corresponding safety distance input by the user to determine the current threshold and automatically enable the resistance adjustment circuit corresponding to the voltage level to be measured in the resistance range switching unit; wherein the voltage level to be measured is equal to the current voltage level of the high-voltage power grid target, and is equal to the voltage level mapped by the resistance in a resistance adjustment circuit in the resistance range switching unit; When detecting the high-voltage power grid target, the near-electric field sensing device moves its position in real time to obtain the electric field strength, and after generating a corresponding voltage signal, it is converted into a current signal by the automatically enabled resistance adjustment circuit for current extraction, and when it is determined that the corresponding extracted current at the moving position at a certain moment is greater than or equal to the current threshold, an alarm is issued to realize a warning of the distance between it and the high-voltage power grid target.

9. The near electric field sensing method based on adjusting distance accuracy by resistance as claimed in claim 8, characterized in that: The resistance adjustment circuit in the resistance range switching unit and its mapped voltage levels are both six; wherein, The resistance values ​​of the resistors in the six resistance adjustment circuits are 100KΩ, 150KΩ, 240KΩ, 2.0MΩ, 2.2MΩ and 10MΩ respectively, and the corresponding mapped voltage levels are 10KV, 35KV, 110KV, 220KV, 330KV and 500KV respectively, and the corresponding safety distances are 3 meters, 4 meters, 5 meters, 6 meters, 7 meters and 9 meters respectively.

10. The near electric field sensing method based on adjusting distance accuracy by resistance according to claim 9, characterized in that: The high-voltage power grid object is a high-voltage wire or a high-voltage device.

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