Visible light and infrared dual-band laser multi-spectrum compatible stealth super-structure film

Abstract

The invention discloses a visible light and infrared dual-band laser multi-spectrum compatible stealth super-structure film which is of an A / B / A / C basic structure, and a dielectric layer A on the uppermost layer, a dielectric layer A on the middle layer and a metal reflecting layer C on the bottom layer are asymmetrically arranged on the two sides along a central defect film layer B. The invention further discloses a preparation method of the visible light and infrared dual-band laser multi-spectrum compatible stealth super-structure film. According to the invention, the basic structure of the thin film is designed, and the optical resonant cavity is utilized to couple metal defect intercalation and interference effect, so that the full-band selective spectrum regulation and control from the visible light nanometer wavelength to the infrared and laser micron wavelength is realized; the super-structure heterogeneous thin film has the disguise capability of visible light with wide color gamut, full color and high saturation, low emissivity of wide-range infrared band and high absorption of dual-band laser, can realize infrared high-temperature thermal disguise, and breaks through the multi-band compatible stealth performance which can be obtained by complicated and expensive technical means such as photoetching; the method has an excellent military camouflage application prospect.

Description

Technical Field

[0001] The present invention belongs to the technical field of optical films, and in particular relates to a visible light infrared dual-band laser multi-spectrum compatible stealth meta-structure film. Background Art

[0002] Camouflage technology plays an important role in protecting military equipment and is widely used in aircraft, tanks, and vehicles. As increasingly advanced multi-mode joint reconnaissance means pose unprecedented threats to these high-value military targets, traditional camouflage strategies—focusing on a single spectrum, such as visible light, infrared, laser, and microwave—are facing major challenges. The diverse and sometimes conflicting mechanisms between different spectrums seriously hinder the realization of multi-frequency compatible camouflage. Although various technologies, methods, and materials have emerged to meet the needs of multi-band stealth and camouflage, they often fail to fully cover all detection bands to avoid being discovered. In a multi-band joint detection environment, stealth devices are required to have a specific color in visible light, low emissivity in a wide range of infrared bands, and high absorption at narrow-range laser frequencies (0.96μm, 1.06μm, 1.54μm, and 10.6μm). Therefore, it is urgent to build stealth devices that are compatible with visible light, laser, and infrared to cope with the increasingly urgent threat of multi-spectrum collaborative detection. The stealth technologies currently developed based on photonic crystals, heterogeneous multilayer film systems, defect intercalation structures and metasurfaces can meet the needs of multi-band stealth to a certain extent, but their film systems are complex in structure and their preparation processes are cumbersome, which limits their widespread application in the military field. In addition, since near-infrared lasers and carbon dioxide lasers operate at 0.9μm to 1.55μm and 10.6μm, respectively, which are located in the infrared detection working band, their demand for narrow-band high absorption conflicts with the stealth requirements of infrared high reflection. Visible light stealth requires that the film can be actively controlled through structural design in a specific color band without sacrificing the performance of the remaining stealth bands. Obviously, to meet the needs of multi-spectrum compatible stealth camouflage, reconciling the conflicts between stealth mechanisms among multiple bands and overcoming the difficulties of mutual restraint of performance among each band have become key issues in the field of stealth.

[0003] In summary, in order to achieve visible light-infrared-dual-band laser multi-spectrum compatible stealth to cope with the increasingly urgent multi-mode joint detection and reconnaissance, and to break through the pain points of traditional camouflage technology, it is particularly important to accurately control the transmission of electromagnetic waves inside the material. The existing technology has complex membrane systems and high difficulty in processing micro-nano structures. Therefore, the development of a stealth film with simple membrane systems, high performance and good compatibility has extremely far-reaching significance for future widespread applications. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a visible light infrared dual-band laser multi-spectrum compatible stealth meta-film in view of the deficiencies of the above-mentioned prior art. The film realizes full-band selective spectral regulation from visible light nano-wavelength to infrared and laser micro-wavelength by designing the basic structure and utilizing the optical resonant cavity coupling metal defect intercalation and interference effect. It has the camouflage capability of wide color gamut, full color, high saturation visible light-wide range infrared band low emissivity-dual-band laser high absorption, and can realize infrared high-temperature thermal camouflage. The meta-structure heterogeneous film breaks through the multi-band compatible stealth performance that can only be obtained by complex and expensive technical means such as lithography, and solves the problem that the current multi-band compatible film has a complex configuration and is difficult to achieve multi-spectrum and multi-band stealth at the same time.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is: a visible light infrared dual-band laser multi-spectrum compatible stealth meta-structure film, characterized in that it has an A / B / A / C basic structure, and the top dielectric layer A, the middle dielectric layer A, and the bottom metal reflective layer C are arranged asymmetrically on both sides along the central defect film layer B.

[0006] The above-mentioned visible light infrared dual-band laser multi-spectrum compatible stealth meta-structure film is characterized in that the dielectric layer A is derived from SiO2, SiO, BaF2, CaF2, MgF2, PbF2, RbF, YbF3, Si3N4, ZnS, ZnSe, Si optical film materials. The above-mentioned optical film materials are all infrared highly transparent materials.

[0007] The above-mentioned visible light infrared dual-band laser multi-spectrum compatible stealth meta-film is characterized in that the central defect B film layer and the metal reflective layer C are derived from Cu, Pt, Pd, Rh, Au, Ag, Al, Ti, V, W, Zr, Hf, Ni metal coating materials and graphene. In the field of optics, graphene has similar properties to metal materials, so both the central defect B film layer and the metal reflective layer C can be selected; when the metal reflective layer C is selected as graphene, the graphene has metal-like properties and plays a similar role as the metal coating material.

[0008] The above-mentioned visible light infrared dual-band laser multi-spectrum compatible stealth meta-film is characterized in that the uppermost dielectric layer A satisfies: 4n A d A ≈10.6μm or 9.9μm, where n A is the refractive index of the uppermost dielectric layer A, d A is the thickness of the uppermost dielectric layer A. Specific optimization and adjustment are performed according to the extinction coefficient of the uppermost dielectric layer A to achieve efficient absorption of long-wave infrared laser.

[0009] The above-mentioned visible light infrared dual-band laser multi-spectrum compatible stealth meta-film is characterized in that the thickness of the dielectric layer A of the intermediate layer is 100nm to 800nm. By adjusting the thickness of the dielectric layer A of the intermediate layer, the resonant frequency can be regulated to present structural colors of different colors, thereby meeting the requirement of covering the full color range of visible light stealth.

[0010] The above-mentioned visible light infrared dual-band laser multi-spectrum compatible stealth meta-film is characterized in that the thickness of the central defect film layer B is 10nm to 30nm, and the thickness of the metal reflective layer C is 10nm to 20nm. Through the joint action of the central defect film layer B and the underlying metal reflective layer C, near-infrared 960nm and 930nm lasers are absorbed in the form of electromagnetic loss and heat loss; at the same time, through the synergistic action of the double metal layer of the central defect film layer B and the metal reflective layer C, dual-band high reflection of infrared 3μm to 5μm and 8μm to 14μm is achieved.

[0011] The visible light infrared dual-band laser multi-spectrum compatible stealth meta-structure film of the present invention is prepared by a conventional electron beam evaporation process.

[0012] Compared with the prior art, the present invention has the following advantages:

[0013] 1. The film of the present invention has a basic structure in which the top dielectric layer A, the middle dielectric layer A, and the bottom metal reflective layer C are asymmetrically arranged on both sides along the central defect film layer B. The top dielectric layer A is used to achieve efficient absorption of long-wave infrared lasers, and the central defect film layer B and the bottom metal reflective layer C work together to absorb near-infrared 960nm and 930nm lasers in the form of electromagnetic loss and heat loss, thereby achieving dual-band high reflection of infrared 3μm to 5μm and 8μm to 14μm. The resonance frequency is regulated by the dielectric layer A in the middle layer to present structural colors of different colors, thereby meeting the requirement of covering the entire color range of visible light invisibility.

[0014] 2. The present invention provides an asymmetric meta-thin film that utilizes an optical resonant cavity (B / A / C) to couple metal defect intercalation and interference effects (the uppermost dielectric layer A), and comprehensively utilizes optical interference and resonant cavity coupling synergistic gain effects to possess full-color stealth camouflage in the visible light system, high reflection in dual infrared bands of 3μm to 5μm and 8μm to 14μm, and a dual-band "hole-digging" phenomenon in the frequency domain near 10.6μm, 9.9μm, 0.93μm and 0.96μm lasers, thereby achieving full-band selective spectral regulation from visible light nanometer wavelengths to infrared and laser micrometer wavelengths, thereby possessing excellent visible light, infrared and laser compatible camouflage functions.

[0015] 3. The present invention integrates multiple spectral control mechanisms such as optical resonant cavity, defect intercalation and optical interference into the basic structure of a four-layer film system for the first time, overcoming the shortcomings of complex configuration and difficult processing of current multi-band compatible films, and breaking through the dilemma that most current multi-band stealth films are black or optical mirrors. It achieves full-color stealth in the visible light range, and has stable performance and strong anti-interference ability, and has excellent application prospects in military camouflage.

[0016] 4. The meta-film of the present invention has excellent angle and polarization insensitivity, and can have excellent stealth effect in a wide angle range and under different polarizations; at the same time, due to the excellent bonding of the film layer and the relative stability of the metal film layer at high temperature, high-temperature infrared thermal radiation suppression can be achieved.

[0017] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the basic structure of A / B / A / C in the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Examples 1 and 2 of the present invention and the corresponding functional properties of each layer.

[0019] Figure 2 This is a relationship diagram between the visible light color system of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-thin film of Example 1 of the present invention and the thickness of the film layer of the central defect B in the resonant cavity and the thickness of the dielectric layer A.

[0020] Figure 3 This is a simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 1 of the present invention at 9.9μm laser and infrared band.

[0021] Figure 4 Simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film at 930nm laser of Example 1 of the present invention.

[0022] Figure 5 Graphs of laser infrared measured and simulated spectra of different visible light structural colors corresponding to the meta-thin film of Example 1 of the present invention at different resonant cavity thicknesses.

[0023] Figure 6 This is a simulated color map of visible light corresponding to different thickness changes of the film layer and dielectric layer A of the central defect B in the resonant cavity of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention

[0024] Figure 7 This is a simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention at 10.6μm laser and infrared band.

[0025] Figure 8 This is a simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention at 960nm laser.

[0026] Fig. 9 The measured and simulated spectra of laser-infrared compatible stealth with different structural colors corresponding to different thicknesses of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention, as well as its spectra under different polarizations and incident angles.

[0027] Fig.10 This is an infrared thermal image of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film under a high-temperature thermal radiation background according to Example 2 of the present invention.

[0028] Fig.11 Structural color diagram of the metal reflective layer C in the resonant cavity of the visible-infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention using different materials and thicknesses and the thickness of the dielectric layer A. DETAILED DESCRIPTION

[0029] like Figure 1 As shown, the visible light infrared dual-band laser multi-spectrum compatible stealth meta-structure film of Examples 1 and 2 of the present invention, wherein the left figure shows the functional properties corresponding to each layer of the film, and the right figure shows the film structure in Example 1 and Example 2. The uppermost dielectric layer A, namely SiO2 (SiO), in the film acts as a laser absorption layer to efficiently absorb laser light, while the central defect film layer B and the metal reflection layer C act as infrared suppression layers to reflect infrared laser light, and are combined with the dielectric layer A in the middle layer as a structural color layer to present structural colors of different colors, thereby playing the role of full-color range visible light stealth camouflage.

[0030] Example 1

[0031] The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment has a basic structure of A / B / A / C, and the uppermost dielectric layer A, the middle dielectric layer A, and the bottom metal reflective layer C are arranged asymmetrically on both sides along the central defect film layer B, wherein the dielectric layer A is made of SiO2, and the uppermost dielectric layer A satisfies: 4n A d A ≈9.9μm, where n A is the refractive index of the uppermost dielectric layer A, and the thickness d of the uppermost dielectric layer A A =800nm, the thickness of the dielectric layer A in the middle layer is 100nm~800nm, the central defect B film layer is made of nano copper with a thickness of 20nm, and the bottom metal reflective layer C is made of Pt with a thickness of 10nm.

[0032] Figure 2This is a graph showing the relationship between the visible light color system of the visible-infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment and the thickness of the central defect B film layer and the thickness of the dielectric layer A in the resonant cavity, wherein Figure a is a picture of colorful visible light samples of the meta-film under different thickness changes in the resonant cavity; Figure b is a visible light simulation color diagram corresponding to different thickness changes of the central defect B film layer and the intermediate layer dielectric layer A in the resonant cavity, the horizontal axis is the thickness of the dielectric layer A, and the vertical axis is the thickness of the central defect B film layer.

[0033] As can be seen from Figure a, by controlling the thickness of the dielectric layer A, i.e. SiO2, in the resonant cavity of the meta-film, a variety of colors including purple, burgundy, brown, khaki and orange can be achieved.

[0034] As can be seen from Figure b, when the thickness of the central defect B film layer, i.e., the copper layer, is 10 nm, the color spectrum extends from red to green, covering almost the entire visible light range, indicating that the thickness of the central defect B film layer is a key parameter affecting the structural color of the film result; further research has shown that the change in the thickness of the central defect B film layer mainly affects the brightness and saturation of the color, and the ability to expand the color gamut is limited. When the thickness of the central defect B film layer is less than 5 nm, it is difficult to produce pure, bright and saturated colors. When it exceeds 10 nm, vivid structural colors can be effectively generated. At the same time, since the dielectric layer A in the resonant cavity can excite the electric field resonance, triggering the absorption of electromagnetic waves, strong local enhancement of effective electromagnetic wave absorption is achieved, and with the increase of the thickness of the dielectric layer A, the resonant absorption and electromagnetic wave localization are enhanced, and the bimetallic layer of the central defect B film layer, i.e., the copper layer and the metal reflective layer C, i.e., the Pt layer, attenuates the electromagnetic waves, further confirming that the resonant cavity (B / A / C) in the metafilm plays a key role in the generation of structural colors.

[0035] Figure 3 This is a simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment at 9.9μm laser and infrared band, Figure 4 The simulated spectrum of the visible-infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment at 930nm laser, combined with Figure 3 and Figure 4 It can be seen that the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film achieves the effects of 9.9μm and 930nm dual-band laser stealth and infrared 3μm~5μm, 8μm~14μm compatible stealth.

[0036] The present invention adjusts the thickness of the resonant cavity (B / A / C) of the metafilm of Example 1, that is, the thickness of the dielectric layer A in the resonant cavity is adjusted to 120nm, 140nm, 190nm, 330mn, and 390nm respectively, and the thickness of other layers remains unchanged, and the infrared spectra of the metafilms corresponding to five different structural colors with different resonant cavity thicknesses are measured and simulated to evaluate its compatibility in multi-color applications. The results show that: as the thickness of the resonant cavity (B / A / C) increases, the infrared spectrum of the metafilm remains stable, showing a thickness-independent characteristic; at the same time, the metafilm achieves an average infrared emissivity of about 0.25 (2.5μm to 25μm), wherein the laser reflectivity at 9.9μm is less than 0.2, the emissivity in the mid-wave infrared (MWIR) region is about 0.1, and the emissivity in the long-wave infrared (LWIR) region is about 0.3. It has a reflectivity as low as 0.05 at 930nm laser, achieving good dual-band laser and infrared and visible light compatible stealth.

[0037] Figure 5 The laser infrared measured and simulated spectra of the meta-thin film of this embodiment corresponding to different visible light structural colors at different resonant cavity thicknesses are shown in Figure a, and Figure b is the simulated spectrum diagram. Combining Figure a and Figure b, it can be seen that the laser infrared measured and simulated spectra of the meta-thin film corresponding to different visible light structural colors at different resonant cavity thicknesses (the thickness of the dielectric layer A is 120nm, 140nm, 190nm, 330nm, and 390nm, respectively) show good consistency, and its compatible stealth performance can be maintained without changing with the change of structural color.

[0038] In summary, the metafilm of the present invention can display a series of structural colors by adjusting the thickness of the resonant cavity (B / A / C) without sacrificing its low infrared emissivity and high narrow-band laser absorption ability.

[0039] The dielectric layer A in this embodiment can also be derived from SiO, BaF2, CaF2, MgF2, PbF2, RbF, YbF3, Si3N4, ZnS, ZnSe, and Si optical thin film materials; the central defect B film layer and the underlying metal reflective layer C can also be derived from Pd, Rh, Au, Ag, Al, Ti, V, W, Zr, Hf, Ni metal coating materials and graphene.

[0040] Example 2

[0041] The difference between this embodiment and the first embodiment is that the uppermost dielectric layer A is made of SiO material.

[0042] Figure 6This is a simulated color diagram of visible light corresponding to different thickness changes of the central defect B film layer and the dielectric layer A in the resonant cavity of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of Example 2 of the present invention. The horizontal axis is the thickness of the dielectric layer A, and the vertical axis is the thickness of the central defect B film layer. Figure 6 It can be seen that compared with Example 1 Figure 2 Similar to Figure b in the figure, the change in the thickness of the central defect B film layer mainly affects the brightness and saturation of the color, and the ability to expand the color gamut is limited. When the thickness of the central defect B film layer is less than 5nm, it is difficult to produce pure, bright and saturated colors. When it exceeds 10nm, vivid structural colors can be effectively generated, and the color saturation and brightness are slightly lower than those in Example 1. This is due to the influence of the refractive index of the top dielectric layer A, i.e., SiO material; this shows that the resonant cavity (B / A / C) in the meta-thin film of the present invention plays a key role in the generation of structural colors.

[0043] Figure 7 This is a simulated spectrum diagram of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment at 10.6μm laser and infrared band, Figure 8 This is the simulated spectrum of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment at 960nm laser, combined with Figure 7 and Figure 8 It can be seen that the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film achieves the effects of 10.6μm and 960nm dual-band laser stealth and infrared 3μm~5μm, 8μm~14μm compatible stealth.

[0044] Fig. 9 The measured and simulated spectra of laser-infrared compatible stealth with different structural colors corresponding to different thicknesses of the visible-infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment and its spectra under different polarizations and incident angles, wherein Figure a is a measured laser-infrared compatible stealth diagram of different structural colors corresponding to different thicknesses of the meta-film, Figure b is a simulated laser-infrared compatible stealth diagram of different structural colors corresponding to different thicknesses of the meta-film, and Figure c are, from left to right: average mid-wave infrared (MWIR) and long-wave infrared (LWIR) emissivity diagrams of different structural colors corresponding to different thicknesses of the meta-film, average infrared emissivity of 3μm to 14μm and 10.6μm laser low reflection diagrams, laser-infrared compatible stealth effect diagrams under TE (transverse electric wave) polarization, and infrared-laser compatible stealth effect diagrams under TM (transverse magnetic wave) polarization.

[0045] from Fig. 9As can be seen from the figures, the laser infrared measured and simulated spectra of the metafilm corresponding to different visible light structural colors at different resonant cavity thicknesses (the thickness of the dielectric layer A is 110nm, 140nm, 160nm, and 200nm, respectively) show good consistency, and its compatible stealth performance can be maintained without changing with the change of structural color. At the same time, the infrared emissivity of the metafilm in the mid-wave infrared (MWIR, about 0.2) and long-wave infrared (LWIR, 0.4) regions at different resonant cavity thicknesses is low, which can effectively suppress infrared thermal radiation from 3μm to 5μm and 8μm to 14μm, and exhibit low laser reflectivity (about 0.3) at 0.6μm, which can effectively absorb lasers and prevent laser detection. In addition, the polarization (TE and TM) and incident angle independence of the metafilm of this embodiment were also evaluated. The results showed that the metafilm exhibited independent characteristics similar to those of the metafilm in Example 1 using SiO2 material as the topmost dielectric layer A, maintaining highly stable infrared low emissivity in two polarization modes and at incident angles of up to 60°, while showing good angular insensitivity and polarization insensitivity.

[0046] Fig.10 The infrared thermal images of the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of this embodiment under the background of high-temperature thermal radiation, wherein Figure a is the room temperature thermal radiation suppression effect diagram of the meta-film, Figure b is the high temperature thermal radiation suppression effect diagram of the meta-film, and Figure c is the infrared thermal radiation suppression effect diagram under different thermal radiation backgrounds. Combining Figures a, b and c, it can be seen that with the increase of the thermal radiation background temperature, the meta-film exhibits a more significant thermal radiation suppression effect, and can achieve efficient infrared stealth at up to 300°C, and has the ability to suppress high-temperature infrared thermal radiation, indicating that the present invention not only achieves better three-band compatible stealth through the structural design of the meta-film, but also does not affect the thermal radiation suppression performance.

[0047] Fig.11 The color diagram of the structure color of the metal reflective layer C in the resonant cavity of the visible-infrared dual-band laser multi-spectrum compatible stealth metafilm of this embodiment with different materials, thicknesses and thickness changes of the dielectric layer A, where the materials of the metal reflective layer C in Figures a to f are Ag, Al, Cr, Au, Cu, and Ti respectively, the ordinate is the thickness of the metal reflective layer C, and the abscissa is the thickness of the dielectric layer A in the resonant cavity. Fig.11 It can be seen that as the material and thickness of the metal reflective layer C and the thickness of the dielectric layer A in the meta-thin film change, structural color can be effectively constructed, and the corresponding laser-infrared compatibility performance of the meta-thin film is not affected.

[0048] By comparing Example 1 with Example 2, it can be seen that the visible light infrared dual-band laser multi-spectrum compatible stealth meta-film of the present invention has outstanding visible light-infrared-dual-band laser compatible stealth performance, and the meta-film prepared by using SiO2 as the topmost dielectric layer A in Example 1 has higher color saturation than the meta-film prepared by using SiO as the topmost dielectric layer A in Example 2, thereby having a better stealth camouflage effect.

[0049] Example 3

[0050] The difference between this embodiment and embodiment 1 is that the uppermost dielectric layer A satisfies: 4n A d A ≈10.6μm, where n A is the refractive index of the uppermost dielectric layer A, and the thickness d of the uppermost dielectric layer A A =747nm.

[0051] Example 4

[0052] The difference between this embodiment and embodiment 1 is that the thickness of the film layer of the central defect B is 10 nm, and the thickness of the bottom metal reflective layer C is 20 nm.

[0053] Example 5

[0054] The difference between this embodiment and embodiment 1 is that the thickness of the film layer of the central defect B is 30 nm.

[0055] After testing, the visible light infrared dual-band laser multi-spectrum compatible stealth meta-films of Examples 3 to 5 of the present invention have achieved full-band selective spectral regulation from visible light nanowavelengths to infrared and laser micron wavelengths, and have excellent visible light, infrared and laser compatible camouflage functions.

[0056] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any simple modification, change and equivalent change made to the above embodiment according to the technical essence of the invention still falls within the protection scope of the technical solution of the present invention.

Claims

1. Visible light infrared dual-band laser multi-spectrum compatible stealth meta-film, characterized by: It has a basic structure of A / B / A / C, and the top dielectric layer A, the middle dielectric layer A, and the bottom metal reflective layer C are arranged asymmetrically on both sides along the central defect film layer B.

2. The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film according to claim 1, characterized in that: The dielectric layer A is derived from SiO2, SiO, BaF2, CaF2, MgF2, PbF2, RbF, YbF3, Si3N4, ZnS, ZnSe, and Si optical thin film materials.

3. The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film according to claim 1, characterized in that: The central defect B film layer and the metal reflective layer C are derived from Cu, Pt, Pd, Rh, Au, Ag, Al, Ti, V, W, Zr, Hf, Ni metal plating materials and graphene.

4. The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film according to claim 1, characterized in that: The uppermost dielectric layer A satisfies: 4n A d A ≈10.6μm or 9.9μm, where n A is the refractive index of the uppermost dielectric layer A, and dA is the thickness of the uppermost dielectric layer A.

5. The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film according to claim 1, characterized in that: The thickness of the dielectric layer A of the intermediate layer is 100 nm to 800 nm.

6. The visible light infrared dual-band laser multi-spectrum compatible stealth meta-film according to claim 1, characterized in that: The thickness of the central defect film layer B is 10 nm to 30 nm, and the thickness of the metal reflection layer C is 10 nm to 20 nm.

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