Band-gap reference circuit capable of resisting single event transient effect and electronic system

Abstract

The invention discloses a band-gap reference circuit capable of resisting a single event transient effect and an electronic system. Comprising a control module, a first band-gap reference circuit module, a second band-gap reference circuit module, a first unity gain amplifier, a second unity gain amplifier, a first comparator, a second comparator, a third comparator, a fourth comparator, a first NOR gate, a second NOR gate, a first transmission gate, a first delay module, a second transmission gate and a third transmission gate. A second delay module and a fourth transmission gate; the first branch circuit and the second branch circuit are respectively connected behind the control module, when one branch circuit is subjected to single particle bombardment, the NOR gate output of the bombardment branch circuit is low level, so that the transmission gate, directly connected with the output end of the NOR gate, on the branch circuit is in a turn-off state; and the NOR gate of the other branch still outputs high level, and the transmission gate directly connected with the output end of the NOR gate on the branch is still in an open state. The device has the advantages of being simple in structure, easy and convenient to operate, easy to implement and good in reinforcing effect.

Description

Technical Field

[0001] The invention belongs to the technical field of electronic system radiation resistance, and in particular relates to a bandgap reference circuit and an electronic system resistant to single particle transient effects. Background Art

[0002] Electronic systems used in aerospace and aviation are easily affected by radiation effects, which can lead to system failure. For electronic systems working in radiation environments, the main radiation effects to consider are single-event effect (SEE) and total ionizing dose effect (TID). As the process continues to shrink, the impact of total dose effect on chips is gradually decreasing; on the contrary, the impact of single-event effect on electronic devices in aerospace equipment is increasing.

[0003] Compared with digital circuits, analog circuits are more sensitive to radiation effects, and the design of single-event effect hardening is more difficult. Therefore, high-performance analog circuits have become the focus and difficulty of radiation effect research. Summary of the invention

[0004] In view of the problems existing in the prior art, the present invention provides a bandgap reference circuit resistant to single-particle transient effects, characterized in that the circuit comprises a control module, a first bandgap reference circuit module, a second bandgap reference circuit module, a first unity gain amplifier, a second unity gain amplifier, a first comparator, a second comparator, a third comparator, a fourth comparator, a first NOR gate, a second NOR gate, a first transmission gate, a first delay module, a second transmission gate, a third transmission gate, a second delay module and a fourth transmission gate;

[0005] Wherein, the first bandgap reference circuit module, the first unit gain amplifier, the first comparator, the second comparator, the first NOR gate, the first transmission gate, the first delay module, and the second transmission gate form a first branch circuit with single-particle transient effect resistance;

[0006] The second bandgap reference circuit module, the second unity gain amplifier, the third comparator, the fourth comparator, the second NOR gate, the third transmission gate, the second delay module, and the fourth transmission gate form a second branch circuit with single-particle transient resistance.

[0007] The first branch and the second branch are connected respectively after the control module. When one of the branches is bombarded by a single particle, the NOR gate output of the bombarded branch is low level, so that the transmission gate directly connected to the output end of the NOR gate on the branch is in the off state; the NOR gate of the other branch still outputs a high level, and the transmission gate directly connected to the output end of the NOR gate on the branch is still in the on state.

[0008] Furthermore, the input end of the first unit gain amplifier is connected to the output end of the first bandgap reference circuit module, and the output end of the first unit gain amplifier is respectively connected to the input end of the first transmission gate, the input end of the first comparator and the input end of the second comparator.

[0009] Further, the output terminal of the first comparator is connected to the input terminal of the first NOR gate; the first comparator is used to output a high level when the voltage output by the first unity gain amplifier is higher than the upper threshold range;

[0010] The output end of the second comparator is connected to the input end of the first NOR gate; the second comparator is used to output a high level of the first comparator when the voltage output by the first unit gain amplifier is lower than the lower threshold range.

[0011] Furthermore, the output end of the first NOR gate is connected to the control end of the first transmission gate and the input end of the first delay module respectively.

[0012] Furthermore, the input end of the second transmission gate is connected to the output end of the first transmission gate; the control end of the second transmission gate is connected to the output end of the first delay module, which is used to delay the opening of the second transmission gate for a period of time; and the output end of the second transmission gate is the output of the entire electronic system.

[0013] Furthermore, the input end of the second unit gain amplifier is connected to the output end of the second bandgap reference circuit module, and the output end of the second unit gain amplifier is respectively connected to the input end of the third transmission gate, the input end of the third comparator and the input end of the fourth comparator.

[0014] Further, the output terminal of the third comparator is connected to the input terminal of the second NOR gate; the third comparator is used to output a high level when the voltage output by the second unity gain amplifier is higher than the upper threshold range;

[0015] The output end of the fourth comparator is connected to the input end of the second NOR gate; the fourth comparator is used to output a high level when the voltage output by the second unit gain amplifier is lower than the lower threshold range.

[0016] Furthermore, the output end of the second NOR gate is connected to the control end of the third transmission gate and the input end of the second delay module respectively.

[0017] Furthermore, the input end of the fourth transmission gate is connected to the output end of the third transmission gate; the control end of the fourth transmission gate is connected to the output end of the second delay module, which is used to delay the opening of the fourth transmission gate for a period of time; and the output end of the fourth transmission gate is the output of the entire electronic system.

[0018] The present invention also provides an electronic system, in which the above-mentioned bandgap reference circuit capable of resisting single-particle transient effects is provided.

[0019] The above technical solution of the present invention has the following beneficial technical effects:

[0020] The circuit of the embodiment of the present invention uses a dual-mode redundant structure, and after the control module, two branches are divided, and an anti-single-particle transient effect module is added to each of the two branches. Therefore, whether the first bandgap reference circuit module or the second bandgap reference circuit module is bombarded by a single particle, the NOR gate on the bombarded branch can output a low level, and the NOR gate on the other branch still outputs a high level. The overall effect is that the entire logic state of the circuit remains unchanged after being bombarded by a single particle, preventing the problem of function being interfered or failing, and the circuit structure is simple, easy to operate, easy to implement, and has a good reinforcement effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic structural diagram of a bandgap reference circuit for resisting single event transient effects in an embodiment of the present invention;

[0022] Figure 2 is a schematic structural diagram of a bandgap reference circuit for resisting single-event transient effects in an embodiment of the present invention;

[0023] Figure 3 is a simulation curve of the output terminal voltage of the first unity gain amplifier before and after the single particle effect occurs in the embodiment of the present invention;

[0024] Figure 4 is a simulation curve of the voltage at the output terminal of the first transmission gate before and after the single event effect occurs in the embodiment of the present invention;

[0025] Among them, AMP1: the first unity gain amplifier; AMP2: the second unity gain amplifier; Com1: the first comparator; Com 2: the second comparator; Com 3: the third comparator; Com 4: the fourth comparator; Nor1: the first NOR gate; Nor 2: the second NOR gate; TG1: the first transmission gate; TG 2: the second transmission gate; TG 3: the third transmission gate; TG 4: the fourth transmission gate. DETAILED DESCRIPTION

[0026] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0028] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] The following combination Figure 1-Figure 4 The specific embodiments of the present invention are described in detail. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0030] Single-Event Transient (SET) is usually caused by high-energy particles generated by solar particle events, radiation belts, cosmic rays, natural decay of transuranium materials, or nuclear weapon explosions bombarding sensitive parts of microelectronic devices, causing circuit logic changes, functional interference or failure. After a semiconductor device is bombarded by a single particle, the energy deposition of the high-energy particles will cause particle collision ionization. Under the action of concentration gradient and electric field, the ionized charges are collected and transported, resulting in transient current and voltage mutations at the bombarded nodes of the circuit. This transient will interfere with the legitimate reference voltage signal, and may cause the entire sub-component that relies on this reference voltage signal to be destroyed, resulting in signal damage or even system failure. In order to prevent signal damage and system failure, the present application provides a bandgap reference circuit and electronic system that are resistant to single-particle transient effects.

[0031] The following is a detailed description of the single-particle transient effect resistant bandgap reference circuit and electronic system provided in the embodiments of the present application through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0032] like Figure 1 As shown, in an embodiment of the present application, a bandgap reference circuit resistant to single-event transient effects is provided, the circuit comprising:

[0033] A first bandgap reference circuit module, configured to output a first DC voltage;

[0034] A second bandgap reference circuit module, used for outputting a second DC voltage;

[0035] A first unity gain amplifier, used to improve the driving capability of the output voltage of the first bandgap reference circuit module and to isolate the first bandgap reference circuit module from other modules;

[0036] A second unity gain amplifier, used to improve the driving capability of the output voltage of the second bandgap reference circuit module and to isolate the second bandgap reference circuit module from other modules;

[0037] A first comparator, whose input end is connected to the output end of the first bandgap reference circuit module, and whose output end is connected to the input end of the first NOR gate; the first comparator is used for outputting a high level when the voltage output by the first unity gain amplifier is greater than the upper threshold range;

[0038] A second comparator, whose input end is connected to the output end of the first bandgap reference circuit module, and whose output end is connected to the input end of the first NOR gate; the second comparator is used for outputting a high level when the voltage output by the first unity gain amplifier is less than the lower threshold range;

[0039] A third comparator, whose input end is connected to the output end of the second bandgap reference circuit module, and whose output end is connected to the input end of the second NOR gate; the third comparator is used for outputting a high level when the voltage output by the second unity gain amplifier is greater than the upper threshold range;

[0040] a fourth comparator, whose input end is connected to the output end of the second bandgap reference circuit module, and whose output end is connected to the input end of the second NOR gate; the fourth comparator is used for outputting a high level when the voltage output by the second unity gain amplifier is less than the lower threshold range;

[0041] A first NOR gate, whose input end is respectively connected to the output end of the first comparator and the output end of the second comparator; the output end of the first NOR gate is respectively connected to the control end of the first transmission gate and the input end of the first delay module; the first NOR gate is used to control the working state of the first transmission gate and the first delay module;

[0042] A second NOR gate, whose input end is respectively connected to the output end of the third comparator and the output end of the fourth comparator; the output end of the second NOR gate is respectively connected to the control end of the third transmission gate and the input end of the second delay module; the second NOR gate is used to control the working state of the third transmission gate and the second delay module;

[0043] A first transmission gate, whose input terminal is connected to the output terminal of the first unit gain amplifier, whose control terminal is connected to the output terminal of the first NOR gate, and is used for transmitting the output voltage of the first unit gain amplifier to the second transmission gate when the control terminal is at a high level;

[0044] A third transmission gate, whose input terminal is connected to the output terminal of the second unity gain amplifier, whose control terminal is connected to the output terminal of the second NOR gate, and is used for transmitting the output voltage of the second unity gain amplifier to the fourth transmission gate when the control terminal is at a high level;

[0045] A first delay module, whose input end is connected to the output end of the first NOR gate, and the first delay module is used to output the output voltage of the first transmission gate after a delay period through the second transmission gate when the first bandgap reference circuit module is bombarded by a single particle;

[0046] A second delay module, whose input end is connected to the output end of the second NOR gate, and the second delay module is used to output the output voltage of the third transmission gate after a delay period through the fourth transmission gate when the second bandgap reference circuit module is bombarded by a single particle;

[0047] A second transmission gate, whose input end is connected to the output end of the first transmission gate, and whose control end is connected to the output end of the first delay module, is used to transmit the output voltage of the first transmission gate to the output end of the system when the control end is at a high level;

[0048] A fourth transmission gate, whose input end is connected to the output end of the third transmission gate, and whose control end is connected to the output end of the second delay module, is used to transmit the output voltage of the third transmission gate to the output end of the system when the control end is at a high level;

[0049] The control module is connected to the first bandgap reference circuit module and the second bandgap reference circuit module respectively, and is used to control the first bandgap reference circuit module and the second bandgap reference circuit module to output the same DC voltage.

[0050] The circuit of this embodiment uses a dual-mode redundant structure, and after the control module, two branches are divided, and an anti-single-particle transient effect module is added to each of the two branches. Whether the first bandgap reference circuit module or the second bandgap reference circuit module is bombarded by a single particle, the NOR gate output of the bombarded branch can be low level, so that the transmission gate directly connected to the output end of the NOR gate on the branch is in the off state, and the NOR gate of the other branch still outputs a high level, and the transmission gate directly connected to the output end of the NOR gate on the branch is still in the on state. The overall effect is that the entire logic state of the circuit remains unchanged after being bombarded by a single particle, preventing the problem of interference or failure of the function, and the circuit structure is simple, easy to operate, easy to implement, and has a good reinforcement effect.

[0051] The control module in this embodiment is a digital modulation module, which is used to set the output voltage of the bandgap reference circuit module. A digital code can be set to make the output voltage of the bandgap reference circuit a fixed value. When not bombarded by any single particle, the output value of the bandgap reference circuit resistant to single particle transient effects is a fixed value set by the digital modulation module.

[0052] The first bandgap reference circuit module and the second bandgap reference circuit module in this embodiment are both used to output a stable and accurate DC voltage to provide a robust and accurate voltage reference for subsequent modules. The two bandgap reference circuit modules used in the first and second paths are exactly the same.

[0053] The first unit gain amplifier in this embodiment is used to improve the driving capability of the output voltage of the first bandgap reference circuit module and isolate the first bandgap reference circuit module from other modules. When not bombarded by any single particle, the input voltage value and the output voltage value of the first unit gain amplifier are equal.

[0054] The second unit gain amplifier in this embodiment is used to improve the driving capability of the output voltage of the second bandgap reference circuit module and isolate the second bandgap reference circuit module from other modules. When not bombarded by any single particle, the input voltage value and the output voltage value of the first unit gain amplifier are equal.

[0055] The first comparator in this embodiment has its input terminal connected to the output terminal of the first bandgap reference circuit module, and is used to output a high level signal when the output voltage of the first bandgap reference circuit module is higher than the upper threshold range.

[0056] The second comparator in this embodiment has its input terminal connected to the output terminal of the first bandgap reference circuit module, and is used to output a high level signal when the output voltage of the first bandgap reference circuit module is lower than the lower threshold range.

[0057] The first NOR gate in this embodiment has its input end connected to the output end of the first comparator and the output end of the second comparator respectively, and its output end is connected to the control end of the first transmission gate and the input end of the first delay module respectively. The first NOR gate is used to control the first transmission gate to turn off when the output voltage of the first bandgap reference circuit module exceeds the upper and lower threshold ranges.

[0058] The first comparator in this embodiment compares the voltages of two input signals and outputs a corresponding binary signal (usually a high level or a low level), which converts an analog signal into a digital signal. The first comparator compares an input analog voltage signal with a reference voltage, and then outputs the result of the comparison.

[0059] In this embodiment, the input terminals of the first comparator and the second comparator are both connected to the output terminal of the first bandgap reference circuit module;

[0060] The output terminals of the first comparator and the second comparator are both connected to the first NOR gate.

[0061] In this embodiment, for the first comparator, when the input analog voltage is greater than the upper threshold voltage, the first comparator outputs a high level; for the second comparator, when the input analog voltage is less than the lower threshold voltage, the second comparator outputs a high level. The comparators used by the first comparator and the second comparator are exactly the same.

[0062] In this embodiment, the first NOR gate includes two input terminals and one output terminal;

[0063] One of the input terminals of the first NOR gate is connected to the output terminal of the first comparator, and the other input terminal of the first NOR gate is connected to the output terminal of the second comparator;

[0064] The output terminal of the first NOR gate is connected to the control terminal of the first transmission gate.

[0065] The first NOR gate in this embodiment is used to take the input signal as OR and then invert it, that is, as long as one of the two input terminals of the NOR gate is at a high level, the output terminal of the NOR gate is at a low level. The NOR gates used in the first NOR gate and the second NOR gate are exactly the same.

[0066] The first unit gain amplifier in this embodiment is used to improve the driving capability of the output of the first bandgap reference circuit module, which is convenient for subsequent signal processing. In addition, it can also play an isolation role, isolating the first bandgap reference circuit module from other modules, and preventing subsequent modules from charging and discharging charges in the first bandgap reference circuit module. The two unit gain amplifiers used by the first unit gain amplifier and the second unit amplifier are the same.

[0067] The third comparator in this embodiment has an input end connected to the output end of the second bandgap reference circuit module, and the third comparator is used to output a high level signal when the output voltage of the second bandgap reference circuit module is higher than the upper threshold range;

[0068] The fourth comparator in this embodiment has an input end connected to the output end of the second bandgap reference circuit module, and the fourth comparator is used to output a high level signal when the output voltage of the second bandgap reference circuit module is lower than the lower threshold range;

[0069] The second NOR gate in this embodiment includes two input terminals and one output terminal;

[0070] One of the input ends of the second NOR gate is connected to the output end of the third comparator, the other input end of the second NOR gate is connected to the output end of the fourth comparator respectively, and its output end is connected to the control end of the third transmission gate and the input end of the second delay module respectively. The second NOR gate is used to control the third transmission gate to turn off when the output voltage of the second bandgap reference circuit module exceeds the upper and lower threshold ranges.

[0071] The third comparator in this embodiment compares the voltages of the two input signals and outputs a corresponding binary signal (usually a high level or a low level), which converts the analog signal into a digital signal. The third comparator compares an input analog voltage signal with a reference voltage, and then outputs it according to the comparison result.

[0072] In this embodiment, the input terminals of the third comparator and the fourth comparator are both connected to the output terminal of the second bandgap reference circuit module;

[0073] The output terminals of the third comparator and the fourth comparator are both connected to the second NOR gate.

[0074] In this embodiment, for the third comparator, when the input analog voltage is greater than the upper threshold voltage, the third comparator outputs a high level; for the fourth comparator, when the input analog voltage is less than the lower threshold voltage, the fourth comparator outputs a high level. The comparators used by the third comparator and the fourth comparator are exactly the same.

[0075] In this embodiment, the second NOR gate includes two input terminals and one output terminal;

[0076] One of the input terminals of the second NOR gate is connected to the output terminal of the third comparator, and the other input terminal of the first NOR gate is connected to the output terminal of the fourth comparator;

[0077] The output terminal of the second NOR gate is connected to the control terminal of the third transmission gate.

[0078] The second NOR gate in this embodiment is used to take the input signal as an OR and then invert it, that is, as long as one of the two input terminals of the NOR gate is at a high level, the output terminal of the NOR gate is at a low level. The NOR gates used in the first NOR gate and the second NOR gate are exactly the same.

[0079] The second unit gain amplifier in this embodiment is used to improve the driving capability of the output of the second bandgap reference circuit module, which is convenient for subsequent signal processing. In addition, it can also play an isolation role, isolating the second bandgap reference circuit module from other modules, and preventing subsequent modules from charging and discharging charges in the second bandgap reference circuit module. The two unit gain amplifiers used by the first unit gain amplifier and the second unit amplifier are the same.

[0080] In this embodiment, the entire circuit presents a symmetrical structure, and the symmetrical electronic components are exactly the same and have the same settings.

[0081] like Figure 1 As shown, in a specific embodiment of the present invention, a bandgap reference circuit resistant to single-particle transient effects is provided, and the circuit may include: a control module, a first bandgap reference circuit module, a second bandgap reference circuit module, a first unit gain amplifier AMP1, a second unit gain amplifier AMP2, a first comparator Com1, a second comparator Com2, a third comparator Com3, a fourth comparator Com4, a first NOR gate Nor1, a second NOR gate Nor2, a first transmission gate TG1, a first delay module, a second transmission gate TG2, a third transmission gate TG3, a second delay module and a fourth transmission gate TG4;

[0082] The output end of the control module is divided into two, one path and two paths, which are respectively connected to the input end of the first bandgap reference circuit module and the input end of the second bandgap reference circuit module; then the output end of the first bandgap reference circuit module is connected to the input end of the first unit gain amplifier AMP1, and the first bandgap reference circuit module outputs the voltage Va.

[0083] The first unit gain amplifier AMP1 outputs voltage Vb along the way, and the output end of the first unit gain amplifier AMP1 is divided into three paths, which are respectively connected to the signal input end of two comparators and a transmission gate. One of the two comparators is the first comparator Com1, and the other is the second comparator Com2; the output ends of the two comparators are respectively connected to the two input ends of the first NOR gate Nor1. The output end of the first NOR gate Nor1 is divided into two paths, one of which is connected to the control end of the first transmission gate TG1, and the other is connected to the first delay module. The two input ports of the first transmission gate TG1, one is the control end, which is connected to the output end of the first NOR gate Nor1; the other is the signal input end, which is connected to the output end of the first unit gain amplifier AMP1. The output end of the first transmission gate TG1 is connected to the signal input end of the second transmission gate TG2. The input end of the first delay unit is connected to the output end of the first NOR gate together with the control end of the first transmission gate TG1, and the output end of the first delay unit is connected to the control end of the second transmission gate TG2. The output end of the second transmission gate TG2 is the voltage output end of the entire system.

[0084] The output of the unit gain amplifier on the second path is also divided into three paths, which are connected to the signal input of two comparators and a transmission gate, just like the first path. One of the two comparators is the third comparator Com3, and the other is the fourth comparator Com4; the output of these two comparators is connected to the two inputs of the second NOR gate Nor2. The output of the second NOR gate Nor2 is divided into two paths, one of which is connected to the control end of the third transmission gate TG3, and the other is connected to the second delay module. The two input ports of the third transmission gate TG3, one is the control end, which is connected to the output of the second NOR gate Nor2; the other is the signal input end, which is connected to the output of the second unit gain amplifier AMP2. The output of the third transmission gate TG3 is connected to the signal input of the fourth transmission gate TG4. The input of the second delay unit is connected to the output of the second NOR gate together with the control end of the third transmission gate TG3. The output of the second delay unit is connected to the control end of the fourth transmission gate TG4, and the output of the fourth transmission gate TG4 is the voltage output of the entire system.

[0085] The output end of the second transmission gate TG2 of one path and the output end of the fourth transmission gate TG4 of the second path are connected together at the same time, and the two serve as the common output voltage Vout of the entire circuit. For one path and two paths, when not bombarded, the voltages output by the second transmission gate and the fourth transmission gate are the same, so the output voltage modulated by the control module = the voltage output by the first bandgap reference circuit module = the voltage output by the second bandgap reference circuit module = the voltage input by the second transmission gate TG2 = the voltage output by the fourth transmission gate TG4; so the bandgap reference circuit resistant to single particle transient effects can input a stable and accurate voltage. When one or both paths are bombarded by a single particle, the bombarded path is not turned on, and the unbombarded path is still turned on and outputs a stable and accurate output voltage that has been set by the control module.

[0086] When any one of the first bandgap reference circuit module or the second bandgap reference circuit module is hit by a single particle, a pulse jump will occur in the output voltage of the bandgap reference circuit. Assuming that the first bandgap reference circuit module is hit by a single particle, the output voltage Va of the first bandgap reference circuit module will exceed the set reasonable threshold value, and this abnormal voltage signal will become a voltage Vb after passing through the first unit gain amplifier AMP1 (due to the unit gain function of the unit gain amplifier, Va = Vb); since the output end of the first unit gain amplifier AMP1 is connected to two comparators, the Vb signal will be compared with the reference voltages of the two set comparators (this reference voltage is the threshold voltage of the control module, the first comparator Com1 sets the reference voltage to the upper threshold voltage, and the second comparator sets the reference voltage to the lower threshold voltage); since the transient state is generated by the single particle bombardment, the voltage Vb has exceeded the threshold voltage range (higher than the upper threshold voltage or lower than the lower threshold voltage). If Vb is higher than the upper threshold voltage, the first comparator Com1 outputs a high level, and the second comparator outputs a high level. The output of the comparator Com2 is low level; if Vb is lower than the lower threshold voltage, the output of the second comparator Com2 is high level, and the output of the first comparator Com1 is low level, so no matter whether Vb is higher or lower than the threshold voltage, one of the two comparators will output high level and the other will output low level; because the output ends of the two comparators are connected to the two input ends of the first NOR gate Nor1, and because of the characteristics of the first NOR gate Nor1, as long as one of the two comparators outputs high level, the output of the first NOR gate Nor1 will be low level; the low level signal output by the first NOR gate Nor1 passes through the control end of the first transmission gate TG1; and the control end of the first transmission gate TG1 receives a low level input, so it will control the first transmission gate TG1 to be non-conductive, so the analog voltage signal output by the output end of the first unit gain amplifier AMP1 will not enter through the signal input end of the first transmission gate TG1. So at this time, all the way is in a non-conductive state. Since single-particle transient effects do not occur at the same time, when the first bandgap reference circuit module is bombarded by a single particle, the second bandgap reference circuit module will not be bombarded by a single particle; the output signal of the first bandgap reference circuit module will not be turned on after being processed by the subsequent circuit; but the other two paths will not be affected in any way and will remain in a state of not being bombarded, and the output of the output end of the fourth transmission gate TG4 will still be the voltage Vout when it is not bombarded, so the output of the entire system will still be the voltage Vout when it is not bombarded.

[0087] For a clearer explanation, the bandgap reference circuit for resisting single-particle transient effects of this embodiment is simulated, and simulation sampling is performed on five points of the entire system. The simulation curve is shown in FIG. Figure 2-Figure 4As shown, the horizontal axis is time, the unit is microsecond μs, and the vertical axis is voltage, the unit is volt V.

[0088] Take the following route as an example to illustrate: Figure 2 This is the simulation curve of the voltage Vb at the output of the first unity gain amplifier before and after the single particle effect occurs. It can be seen that a transient pulse occurs. Figure 2 The dashed line and dotted line in are the upper threshold voltage of the first comparator and the lower threshold voltage of the second comparator respectively, and these two threshold voltages always remain constant. It can be seen that after the particle bombardment, a pulse signal is formed at the output end of the first unity gain amplifier.

[0089] Figure 3 It is a simulation curve of the output voltage of the first transmission gate TG1 before and after the single event effect occurs. Figure 3 The dashed line and dotted line in the figure are the upper threshold voltage of the first comparator and the lower threshold voltage of the second comparator, respectively, and these two threshold voltages always remain constant. When the transmission gate is in the on state, the output voltage of the first transmission gate TG1 is equal to the input voltage, and it plays the role of transmitting the voltage signal. However, the conduction of the first transmission gate TG1 needs to be controlled by the control end. In the on state, the control end is in the 1 state, that is, in the high level state, the input end of the first transmission gate TG1 can transmit the voltage signal, and the output end will output the voltage signal of the input end; when bombarded by particles, the control end is in the 0 state, that is, the low level state, and the output end of the first transmission gate TG1 will not output the voltage of the input end. At this time, the first transmission gate TG1 is in the off state.

[0090] When bombarded by particles, that is, Figure 3 During the period of -0.00492-0.56472μs, the control end of the first transmission gate TG1 is in the 0 state, and the first transmission gate TG1 is in the closed state, but this time lasts for a very short time. Although the first transmission gate TG1 is in the closed state, this time is very short, and the transmission gate will have a charge and discharge process. In such a short time, the voltage signal at the output end of the first transmission gate TG1 will still maintain the voltage value before disconnection. Although the first transmission gate TG1 is in the closed state at this time, there is still voltage output. Figure 3 It can be seen that the output voltage at this time is basically equal to the output voltage value before disconnection.

[0091] Since the output voltage of the first transmission gate TG1 is derived from the output voltage signal of the first unit gain amplifier AMP1; the signal of the control end of the first transmission gate TG1 is derived from the output signal of the first NOR gate Nor1; the output signal of the first NOR gate Nor1 is derived from the first comparator Com1 and the second comparator Com 2, the first comparator Com1 and the second comparator Com 2 will compare the input voltage with the upper threshold voltage and the lower threshold voltage, and then output the comparison result to the first NOR gate Nor1. When bombarded by a single particle, the output voltage of the first unit gain amplifier AMP1 exceeds the threshold range, then the first transmission gate TG1 will be closed. Since the single particle transient event generates an instantaneous pulse jump, and then the pulse will drop over time. When the output voltage value of the first unit gain amplifier AMP1 drops to the critical point of the upper threshold range, the control end of the first transmission gate TG1 will be reopened, and at this time the first transmission gate TG1 can output the voltage at the input end, so Figure 3 A small voltage jump action will be generated at 0.56472μs. And this small jump curve can just overlap with the curve of the first unit gain amplifier AMP1 in the same time period. When the output voltage value of the first unit gain amplifier AMP1 returns to the upper and lower threshold range, the control end of the first transmission gate TG1 becomes a high level, and the first transmission gate TG1 is turned on. After being turned on, the first transmission gate TG1 outputs the output voltage of the first unit gain amplifier AMP1 at this time, so a small voltage jump action will be generated at the output end of the first transmission gate TG1. For the stable output of the entire system, it is not desirable to generate such a jump. In this embodiment, a delay module is connected to the first transmission gate TG1, and the delay module can delay this jump. The control end of the second transmission gate TG2 is connected to the output end of the delay module, and the signal input end is connected to the output end of the first transmission gate TG1. Since the output end of the delay module is connected to the control end of the second transmission gate TG2, through the delay of the delay module, the second transmission gate TG2 will be opened again after a period of time, and the output end of TG2 will output the output voltage of the transmission gate TG1 after a period of time. After a delay period, the output voltage of the first transmission gate TG1 returns to the stable state before the single particle bombardment at 1.07 μs, and the output voltage of the second transmission gate TG2 after the delay is the stable voltage output by the first transmission gate TG1 after 1.07 μs.

[0092] Figure 4 This is the simulation curve of the output voltage Vout of the entire system before and after the single particle effect occurs. It can be seen that the output voltage of the system remains constant. Figure 4 The dot-dash line and short dot-dash line in are the upper threshold voltage of the first comparator and the lower threshold voltage of the second comparator, respectively. These two threshold voltages always remain constant. Figure 4 It can be seen that the output voltage Vout of the entire system is constant and remains unchanged.

[0093] The circuit of this embodiment adopts a dual-mode redundant structure, and after the control module, two identical branches are divided. Through such a reinforcement method for resisting single-particle transient effects, two comparators, a NOR gate, a delay unit and two transmission gates are added to each of the two paths. Whether the first bandgap reference circuit module or the second bandgap reference circuit module is bombarded by a single particle, the bombarded path can be made not to output a jump voltage, and the other path still outputs a stable voltage Vout, thereby preventing the function from being interfered with or failing. The circuit has a simple structure, is easy to operate, easy to implement and has a good reinforcement effect.

[0094] In a second aspect of the embodiments of the present application, an electronic system is provided, wherein the electronic system is provided with a bandgap reference circuit resistant to single event transient effects according to any one of the embodiments of the first aspect.

[0095] For the convenience and simplicity of description, the specific structure of the electronic system described above can refer to the corresponding introduction in the aforementioned embodiment of the bandgap reference circuit for resisting single-particle transient effects. The technical problems solved and the technical effects achieved by the bandgap reference circuit for resisting single-particle transient effects can also be achieved by the electronic system, and will not be repeated here.

[0096] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A bandgap reference circuit resistant to single event transient effects, characterized in that: The circuit includes a control module, a first bandgap reference circuit module, a second bandgap reference circuit module, a first unit gain amplifier, a second unit gain amplifier, a first comparator, a second comparator, a third comparator, a fourth comparator, a first NOR gate, a second NOR gate, a first transmission gate, a first delay module, a second transmission gate, a third transmission gate, a second delay module and a fourth transmission gate; Wherein, the first bandgap reference circuit module, the first unit gain amplifier, the first comparator, the second comparator, the first NOR gate, the first transmission gate, the first delay module, and the second transmission gate form a first branch circuit with single-particle transient effect resistance; The second bandgap reference circuit module, the second unity gain amplifier, the third comparator, the fourth comparator, the second NOR gate, the third transmission gate, the second delay module, and the fourth transmission gate form a second branch circuit with single-particle transient resistance. The first branch and the second branch are connected respectively after the control module. When one of the branches is bombarded by a single particle, the NOR gate output of the bombarded branch is low level, so that the transmission gate directly connected to the output end of the NOR gate on the branch is in the off state; the NOR gate of the other branch still outputs a high level, and the transmission gate directly connected to the output end of the NOR gate on the branch is still in the on state.

2. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The input end of the first unit gain amplifier is connected to the output end of the first bandgap reference circuit module, and the output end of the first unit gain amplifier is respectively connected to the input end of the first transmission gate, the input end of the first comparator and the input end of the second comparator.

3. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The output end of the first comparator is connected to the input end of the first NOR gate; the first comparator is used to output a high level when the voltage output by the first unity gain amplifier is higher than the upper threshold range; The output end of the second comparator is connected to the input end of the first NOR gate; the second comparator is used to output a high level of the first comparator when the voltage output by the first unit gain amplifier is lower than the lower threshold range.

4. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The output end of the first NOR gate is connected to the control end of the first transmission gate and the input end of the first delay module respectively.

5. The single event transient resistant bandgap reference circuit according to claim 1, characterized in that: The input end of the second transmission gate is connected to the output end of the first transmission gate; the control end of the second transmission gate is connected to the output end of the first delay module, and is used to delay the opening of the second transmission gate for a period of time; The output terminal of the second transmission gate is the output of the entire electronic system.

6. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The input end of the second unit gain amplifier is connected to the output end of the second bandgap reference circuit module, and the output end of the second unit gain amplifier is respectively connected to the input end of the third transmission gate, the input end of the third comparator and the input end of the fourth comparator.

7. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The output end of the third comparator is connected to the input end of the second NOR gate; the third comparator is used to output a high level when the voltage output by the second unity gain amplifier is higher than the upper threshold range; The output end of the fourth comparator is connected to the input end of the second NOR gate; the fourth comparator is used to output a high level when the voltage output by the second unit gain amplifier is lower than the lower threshold range.

8. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The output end of the second NOR gate is connected to the control end of the third transmission gate and the input end of the second delay module respectively.

9. The single event transient effect resistant bandgap reference circuit according to claim 1, characterized in that: The input end of the fourth transmission gate is connected to the output end of the third transmission gate; the control end of the fourth transmission gate is connected to the output end of the second delay module, which is used to delay the opening of the fourth transmission gate for a period of time; the output end of the fourth transmission gate is the output of the entire electronic system.

10. An electronic system, characterized in that: A bandgap reference circuit resistant to single event transient effects according to any one of claims 1 to 9 is provided.

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