Die bonding apparatus and die bonding method

Abstract

The invention provides bare chip bonding equipment and a bare chip bonding method. The bare chip bonding equipment and the bare chip bonding method can evaluate the quality of a bare chip in a bare chip bonding process. The die bonding apparatus according to the present invention comprises: a wafer stage for supporting a wafer divided in a die unit; a die ejector selectively separating the die from the dicing tape in the wafer table; the bare chip transferring module is used for picking up and transferring the bare chip from the wafer table; a die stage that places the die from the die transfer module and performs inspection on the die; the bare chip bonding module is used for picking up the bare chip from the bare chip table and bonding the bare chip to a substrate; the bonding table is used for transferring the substrate and transmitting the bonded substrate to a material box; and a processor that generates map data representing the quality of each die.

Description

Technical Field

[0001] The invention relates to a bare chip bonding device and a bare chip bonding method. Background Art

[0002] The semiconductor manufacturing process is a process for manufacturing semiconductor elements on a substrate (e.g., a wafer), including, for example, exposure, evaporation, etching, ion implantation, cleaning, etc. For the bare die formed in chip units by the semiconductor manufacturing process, a process for bonding the bare dies using a substrate for packaging (e.g., a printed circuit board (PCB)) can be performed.

[0003] During the die bonding process, the die with the die attach film attached thereto is peeled off from the dicing tape and bonded to the substrate through the die transfer module, but the die may be damaged before or during the die bonding process. Depending on the degree of damage to the die, subsequent processes for the die and the performance of the chip loaded with the corresponding die are affected. Summary of the invention

[0004] The present invention provides a die bonding device and a die bonding method which can evaluate the quality of a die during the die bonding process.

[0005] The die bonding apparatus according to the present invention includes: a wafer stage supporting a wafer divided into die units; a die ejector selectively separating a die from a dicing tape in the wafer stage; a die transfer module picking up and transferring the die from the wafer stage; a die stage placing the die from the die transfer module and performing an inspection on the die; a die bonding module picking up the die from the die stage and bonding the die to a substrate; a bonding stage transferring the substrate and transferring the bonded substrate to a material box; and a processor generating map data representing the quality of each die. The processor generates the map data representing the quality of each die in the wafer based on the first quality data related to the interval distribution between the die, the second quality data related to the numerical information obtained during the picking process of the die, and the third quality data related to the sensing information detected during the peeling process of the die.

[0006] According to an embodiment of the present invention, the interval distribution between the dies may be measured by a camera located above the wafer stage.

[0007] According to an embodiment of the present invention, the second quality data may include vacuum pressure data applied to the dicing tape by the die ejector and pickup success rate data performed by the die transfer module.

[0008] According to an embodiment of the present invention, the flatness between the die ejector and the wafer stage may be measured by applying vacuum pressure from the die ejector to the dicing tape.

[0009] According to an embodiment of the present invention, the picking success rate data performed by the bare die transfer module may be defined as a ratio of the number of successful pickings to the number of picking attempts by the bare die transfer module.

[0010] According to an embodiment of the present invention, the third quality data may include deformation data of the die detected at a time point of peeling the die and flatness data of ejection pins used to push the die out of the die ejector.

[0011] According to an embodiment of the present invention, the deformation data of the die and the flatness data of the ejector pins may be measured by an optical displacement sensor disposed around the die ejector.

[0012] According to an embodiment of the present invention, the optical displacement sensor may include: a light-transmitting portion, which is arranged on one side of the die ejector and irradiates light toward an upper area of ​​the die ejector, and a light-receiving portion, which is arranged on the opposite side of the light-transmitting portion across the die ejector and receives light irradiated by the light-transmitting portion to measure the deformation of the die and the flatness of the ejector pin.

[0013] According to an embodiment of the present invention, the processor may generate map data representing the quality of each die in the wafer by calculating a weighted sum of the first quality data, the second quality data and the third quality data.

[0014] The die bonding method performed by the die bonding apparatus according to the present invention includes: a step of forming intervals between the dies in a wafer stage in a state where the dies are attached to the dicing tape in a state of being divided into dies; a step of peeling the dies from the dicing tape using a die ejector located below the wafer; a step of picking up the dies by a die transfer module; a step of placing the dies on the die stage and inspecting the dies; a step of picking up the dies by a die bonding module and bonding the dies to a substrate; and a step of generating map data representing the quality of each die in the wafer. The step of generating the map data includes the step of generating the map data representing the quality of each die in the wafer based on first quality data related to the interval distribution between the dies, second quality data related to numerical information obtained during the picking process of the dies, and third quality data related to sensing information detected during the peeling process of the dies.

[0015] According to the present invention, the quality of dies can be effectively managed by generating quality data of dies based on data measured in a die bonding process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A brief structure of a die bonding apparatus according to the present invention is shown.

[0017] Figure 2 A die peeling module and a die transferring module in the die bonding equipment according to the present invention are shown.

[0018] Figure 3 is a flow chart illustrating a die bonding method according to the present invention.

[0019] Figure 4 The die peeling and pick up process is shown.

[0020] Figure 5 The structure of the die ejector is shown.

[0021] Figure 6 This is a diagram for explaining the distribution of intervals between dies.

[0022] Figure 7 Shows the flatness misalignment between ejector pins.

[0023] Figure 8 Shows a situation where the die and dicing tape are stuck and the die is deformed.

[0024] Fig. 9 An optical displacement sensor and a die peelability measurement process using the optical displacement sensor are shown.

[0025] Fig.10 The generation process of map data showing the quality of the die according to the invention is shown.

[0026] (Explanation of Reference Numerals)

[0027] 100: Die bonding equipment

[0028] 110: Wafer table

[0029] 116: Die ejector

[0030] 120: Bare die transfer module

[0031] 124: Bare chip platform

[0032] 130: Die bonding module

[0033] 170: Camera

[0034] 180: Optical displacement sensor

[0035] 200: Bonding station DETAILED DESCRIPTION

[0036] Hereinafter, the embodiments of the present invention will be described in detail with reference to the attached drawings so that a person with ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention. The present invention can be implemented in various forms and is not limited to the embodiments described herein.

[0037] In order to clearly describe the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the entire specification.

[0038] In each embodiment, components having the same structure are denoted by the same reference numerals and described only in a representative embodiment, and only structures different from the representative embodiment are described in other embodiments.

[0039] Throughout the specification, when it is said that any part is "connected (or coupled)" to other parts, this includes not only the case of "direct connection (or coupling)" but also the case of "indirect connection (or coupling)" via other parts. In addition, when it is said that any part "includes" any constituent element, unless there is a special description to the contrary, this means that other constituent elements are not excluded and other constituent elements may be included.

[0040] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by a person having ordinary knowledge in the technical field to which the present invention belongs. Terms such as terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the related technology, and in this application, unless explicitly defined, shall not be interpreted as ideal or overly formal meanings.

[0041] Figure 1 FIG. 1 shows a brief structure of a die bonding device 100 according to the present invention. Figure 2 The die bonding apparatus 100 according to the present invention is used to bond a die 20 to a substrate 30 (eg, a lead frame (PCB)) in a die bonding process for manufacturing a semiconductor package.

[0042] The die bonding device 100 according to an embodiment of the present invention includes a wafer stage 110 that supports a wafer 10 divided into units of die 20, a die ejector 116 that selectively separates the die 20 from the dicing tape 12 in the wafer stage 110, a die transfer module 120 that transfers the die 20 from the wafer stage 110, a die stage 124 that places the die 20 transferred by the die transfer module 120 and performs inspection on the die 20, a die bonding module 130 that picks up the die 20 from the die stage 124 and bonds the die 20 to a substrate 30, a bonding stage 200 that transfers the substrate 30 and transmits the bonded substrate 30 to a material box 42, and a processor 300 that generates map data representing the quality of each die.

[0043] The die bonding apparatus 100 can pick up the die 20 from the wafer 10 including the die 20 individualized by the dicing process and bond the die 20 to the substrate 30. The wafer 10 can be provided in a state of being attached to the dicing tape 12, and the dicing tape 12 can be mounted on a mounting frame 14 in a substantially circular ring form. A die attach film (DAF) for attaching the die 20 to the substrate is attached to the bottom of the wafer 10. That is, the wafer 10, the die attach film, and the dicing tape 12 are supplied to the die bonding apparatus 100 in a state of being attached to the mounting frame 14.

[0044] A cassette 50 containing a plurality of wafers 10 is loaded into the loading port 102 . The wafer transfer unit 104 takes the wafers 10 out of the cassette 50 and loads them onto the wafer stage 110 , and the wafer transfer unit 104 can move along a guide rail 106 disposed between the cassette 50 and the wafer stage 110 .

[0045] An expansion ring 112 in the form of a circular ring may be disposed on the wafer stage 110, and the expansion ring 112 may support the edge of the dicing tape 12. In addition, a clamp 114 for holding the mounting frame 14 and a clamp driving unit (not shown) for expanding the dicing tape 12 by lowering the clamp 114 while the dicing tape 12 is supported by the expansion ring 112 may be disposed on the wafer stage 110.

[0046] Although not shown, the wafer stage 110 may be configured to be movable in the horizontal direction by a stage driving unit (not shown), and the stage driving unit may move the wafer stage 110 to a wafer loading / unloading area (at a position adjacent to the end of the guide rail 106) for loading and unloading of the wafer 10. Figure 1 In addition, the stage driving unit may move the wafer stage 110 in order to selectively pick up the die 20. That is, the stage driving unit may adjust the position of the wafer stage 110 so that the die 20 to be picked up among the die 20 is located above the die ejector 116.

[0047] The die 20 separated by the die ejector 116 can be picked up by the die transfer module 120 disposed above the wafer stage 110. The die transfer module 120 can transfer the die 20 to the die stage 124 disposed on one side of the wafer stage 110 after picking up the die 20, and the die bonding module 130 can pick up the die 20 on the die stage 124 and bond it to the substrate 30. The die transfer module 120 can be moved to the position of the die 20 measured by the camera 170, and the operation of the die transfer module 120 can be controlled by the control unit 122.

[0048] The substrate 30 can be taken out from the first material box 40 and transferred to the bonding stage 200, and can be transferred and stored in the second material box 42 after the bonding process is completed. The bare die bonding apparatus 100 may include a substrate transfer unit 140 for transferring the substrate 30 to the bonding stage 200. For example, the substrate transfer unit 140 may include a guide rail 142 for guiding the substrate 30 between the first material box 40 and the bonding stage 200 and the second material box 42, a clamp 144 for holding one side end of the substrate 30, and a clamp driving unit 146 for moving the clamp 144 in a horizontal direction (X-axis direction). The clamp driving unit 146 can move the clamp 144 after holding one side end of the substrate 30 by the clamp 144 to load the substrate 30 on the bonding stage 200. Although not shown, the substrate transfer unit 140 may also include a second clamp (not shown) for moving the substrate 30 to the second material box 42 after the bonding process is completed.

[0049] The die bonding apparatus 100 may include a first head driving unit 132 for moving the die bonding module 130 in a vertical direction, and a second head driving unit 134 for moving the die bonding module 130 in a second horizontal direction (e.g., Y-axis direction) perpendicular to the horizontal direction between the die stage 124 and the bonding stage 200, in order to pick up the die 20 on the die stage 124 and bond it to the substrate 30. Although not shown in detail, the die bonding module 130 may include a bonding tool for picking up the die 20 using vacuum pressure and a heater for heating the die 20. That is, the die bonding module 130 may pick up the die 20 on the die stage 124 and bond it to the substrate 30. In addition, the die bonding module 130 may also pick up the die 20 from the wafer 10 and bond it directly to the substrate 30.

[0050] On the other hand, a camera for photographing a reference mark on the substrate 30 and an area to be bonded with the die 20 may be arranged above the bonding stage 200 for position adjustment of the substrate 30, that is, for alignment. In addition, the die bonding apparatus 100 may include a plurality of cameras for the purpose of inspecting the die 20 on the wafer 10, the die 20 on the die stage 124, the die 20 picked up by the die bonding module 130, and the like.

[0051] The processor 300 may control the overall operation of the die bonding apparatus 100. The processor 300 may include a microprocessor and a processing circuit for performing operations and data processing for the operation of the die bonding apparatus 100. In addition, the die bonding apparatus 100 may include a memory for storing data and a communication module for transmitting and receiving data. According to the present invention, the processor 300 may generate map data 1000 (refer to Fig.10 ). The map data 1000 may be data presenting quality information (quality score) of each die 20 in the wafer 10, including a numerical value presenting the quality of each die 20, and the map data 1000 may be image data presenting the quality of each die 20 in the wafer 10. The numerical value, grade, etc. presenting the quality of each die 20 are referred to as quality data herein.

[0052] The processor 300 can generate quality data of each die 20 in the wafer 10 based on the first quality data 1010 related to the spacing distribution between the die 20, the second quality data 1020, 1030 related to the numerical information obtained during the picking process of the die 20, and the third quality data 1040 related to the sensing information detected during the peeling process of the die 20.

[0053] Figure 3 is a flow chart showing a die bonding method S300 according to the present invention. Figure 3 The die bonding method S300 of the present invention may be performed by the die bonding apparatus 100. The die bonding method S300 according to the present invention includes a step (S310) of forming a gap between the die 20 in the wafer 10 attached to the dicing tape 12 in a state where the die 20 is divided in units in the wafer stage 110, a step (S320) of peeling the die 20 from the dicing tape 12 by using the die ejector 116 located below the wafer 10, a step (S330) of picking up the die 20 by the die transfer module 120, a step (S340) of placing the die 20 on the die stage 124 and inspecting the die 20, a step (S350) of picking up the die 20 by the die bonding module 130 and bonding the die to the substrate 30, and a step (S350) of generating map data 1000 (refer to FIG. 1 ) showing the quality of each die 20 in the wafer 10. Fig.10 ) step (S360).

[0054] The step of generating the map data 1000 includes the step of presenting the quality data of each die 20 in the wafer 10 based on the first quality data 1010 related to the spacing distribution between the die 20, the second quality data 1020, 1030 related to the numerical information obtained during the picking process of the die 20, and the third quality data 1040 related to the sensing information detected during the peeling process of the die 20.

[0055] In step S310, the dicing tape 12 is expanded by the wafer stage 110, and the intervals between the dies 20 in the wafer 10 are expanded by the expansion of the dicing tape 12. Therefore, a certain interval is formed between the dies 20. However, the intervals between the dies 20 may be different according to process deviations during the dicing process of the wafer 10 and the expansion process of the wafer 10. For example, referring to Figure 6 In the wafer 10, the interval G1 between the dies 20 in a part of the area Z1 and the interval G2 between the dies 20 in another area Z2 may be different. When the interval between the dies 20 is within the reference range, the quality of the die 20 is determined to be high, and when the interval between the dies 20 is out of the reference range, the quality of the die 20 is determined to be low. That is, the quality of the die 20 can be determined according to the degree to which the interval between the dies 20 and the surrounding dies 20 deviates from the reference value.

[0056] The quality data (quality score) of the die 20 according to the present invention may reflect the first quality data 1010 related to the interval between the die 20. As the first quality data 1010, the interval between the die 20 may be measured by the camera 170 located above the wafer stage 110. The interval between the die 20 may be measured by the camera 170 that recognizes the positions of the die 20. In addition, the interval between the die 20 may be measured by the camera 170 that recognizes the positions of the die 20 and another camera.

[0057] In step S320, the die 20 is peeled off from the dicing tape 12 by the die ejector 116. The die ejector 116 pushes out the die 20 while fixing the dicing tape 12 around the die 20 to be ejected, and peels the die 20 from the dicing tape 12. In step S330, if the die 20 is peeled off from the dicing tape 12, the die 20 is picked up by the die transfer module 120.

[0058] In step S340, the alignment state of the die 20 is checked on the die stage 124, and in step S350, the die bonding module 130 picks up the die 20 from the die stage 124 and bonds it to the substrate 30. In step S360, the processor 300 generates quality data of each die 20 in the wafer 10 based on the first quality data 1010 related to the interval distribution between the die 20, the second quality data 1020 and 1030 related to the numerical information obtained during the picking process of the die 20, and the third quality data 1040 related to the sensing information detected during the peeling process of the die 20.

[0059] Figure 4 Shows the die peeling and pick-up process. Figure 4 In step S410, the position of the die 20 is identified by the camera 170. Figure 4As shown in (a) of FIG. 1 , the camera 170 recognizes the position of the die 20 by being located above the die 20. Figure 4 As shown in (b), the die transfer module 120 moves to the position of the identified die 20. In step S420, the die ejector 116 peels the die 20 from the dicing tape 12 while the die transfer module 120 picks up the die 20. The die transfer module 120 can use vacuum pressure or electromagnetic force to hold the die 20. Figure 4 As shown in (c), if a specific die 20 is picked up in step S430, the wafer 10 can be moved by the wafer stage 110 by the interval between the die 20, that is, the die pitch DP. If the wafer 10 moves by the die pitch DP, the work for picking up the next die 20 can be performed in the same manner.

[0060] Figure 5 The structure of the die ejector 116 is shown. The die ejector 116 peels the die 20 attached to the dicing tape 12 from the dicing tape 12 . Figure 5 (a) shows the die ejector 116 viewed from above, Figure 5 (b) shows a cross section of the die ejector 116 viewed from the side.

[0061] refer to Figure 5 (a), the die ejector 116 includes a shell 1162 forming a cylindrical outer wall and a cover 1161 inserted above the shell 1162. An ejector hole 1163 for lifting and lowering an ejector pin 1165 is provided at the center of the cover 1161, and a vacuum hole 1164 for allowing a gas of vacuum pressure to flow is provided around the ejector hole 1163.

[0062] refer to Figure 5 (b), a cover body 1161 is installed above a housing 1162, and an ejector hole 1163 and a vacuum hole 1164 are formed in the cover body 1161. Inside the housing 1162, there are an ejector pin 1165, an ejector block 1166 on which the ejector pin 1165 is installed, and a lifting shaft 1169 for lifting and lowering the ejector block 1166. In addition, inside the housing 1162, there is a stopper 1167 for limiting the descending height of the ejector block 1166, and a flow path 1168 is formed outside the stopper 1167, through which the gas flowing along the vacuum hole 1164 can move.

[0063] A vacuum pressure P is applied to the ejector hole 1163 of the die ejector 116. vac , and through the vacuum pressure P vacThe dicing tape 12 around the peeled die 20 is closely attached to the cover 1161 of the die ejector 116. At the same time, the die 20 is pushed out by the ejector pin 1165 rising, and the die 20 is separated from the dicing tape 12. As needed, an additional hole can be provided in the center of the cover 1161, and air can be pushed out of the die 20 through the hole. In addition, vacuum pressure can also be applied through the additional hole. The die ejector 116 can be connected to a gas supply source or a vacuum pump, and the air pressure applied to the die 20 and the vacuum pressure for fixing the dicing tape 12 can be measured. A flow meter for measuring the air pressure and the vacuum pressure can be set in the air flow path where the air pressure and the vacuum pressure are applied.

[0064] exist Figure 5 2 shows a die ejector 116 that pushes out the die 20 using the ejector pins 1165 . However, in order to peel off the die 20 , a die ejector 116 that uses air pressure or a die ejector 116 that uses a multi-stage block may be used.

[0065] The second quality data 1020 , 1030 include the vacuum pressure data 1020 applied to the dicing tape 12 by the die ejector 116 and the pick-up success rate data 1030 performed by the die transfer module 120 .

[0066] The vacuum pressure data 1020 includes the vacuum pressure value used when picking up each die 20. The vacuum pressure used when picking up the die 20 is related to the flatness between the die ejector 116 and the wafer stage 110 (or the dicing tape 12 and the die 20). That is, the flatness between the die ejector 116 and the wafer stage 110 is measured by the vacuum pressure applied from the die ejector 116 to the dicing tape 12. The higher the flatness between the die ejector 116 and the wafer stage 110, the greater the possibility that the quality of the die 20 is high, and the lower the flatness between the die ejector 116 and the wafer stage 110, the greater the possibility that the quality of the die 20 is low. Therefore, the vacuum pressure data 1020 applied from the die ejector 116 to the dicing tape 12 is included in the second quality data.

[0067] In addition, the picking success rate data 1030 of the die 20 performed by the die transfer module 120 is included in the second quality data. The picking success rate data performed by the die transfer module 120 is defined as the ratio of the number of successful pickings to the number of picking attempts by the die transfer module 120. The picking success rate of the die 20 is low when a specific die 20 is not peeled off smoothly or the die 20 is damaged. The higher the picking success rate, the greater the possibility that the quality of the die 20 is high, and the lower the picking success rate (that is, the greater the number of picking failures), the greater the possibility that the quality of the die 20 is low. The picking success rate data 1030 by the die transfer module 120 is included in the second quality data.

[0068] The second quality data is data obtained by adding the vacuum pressure data 1020 and the pickup success rate data 1030. The second quality data may be determined by a weighted sum of the vacuum pressure data 1020 and the pickup success rate data 1030.

[0069] The third quality data 1040 includes deformation data of the die 20 detected at the peeling time point of the die 20 and flatness data of the ejector pins 1165 that push the die out of the die ejector 116 .

[0070] like Figure 7 As shown, a portion of the ejector pins 1165B among the ejector pins 1165A, 1165B, and 1165C may protrude due to the foreign matter PC. If the die 20 is peeled off by the protruding ejector pins 1165B, there is a high possibility that the die 20 is damaged. That is, if the flatness of the ejector pins 1165 is high, there is a high possibility that the quality of the die 20 is high, and if the flatness of the ejector pins 1165 is low, there is a high possibility that the quality of the die 20 is low. The flatness data of the ejector pins 1165 is included in the third quality data 1040 related to the sensing information detected during the peeling process of the die 20.

[0071] like Figure 8 As shown, if the degree of adhesion between the die 20 and the dicing tape 12 is large, the deformation of the die 20 may be large during the peeling process of the die 20. If the deformation of the die 20 is large, the possibility of damage to the die 20 is large. That is, if the deformation amount of the die 20 is large at the peeling time point of the die 20, the possibility of low quality of the die 20 is large, and if the deformation amount of the die 20 is small, the possibility of high quality of the die 20 is large. The deformation amount data of the die 20 detected at the peeling time point of the die 20 is included in the third quality data 1040 related to the sensing information detected during the peeling process of the die 20.

[0072] The deformation data of the die 20 and the flatness data of the ejector pins 1165 can be measured by an optical displacement sensor 180 disposed around the die ejector 116. Fig. 9 As shown, by irradiating light toward the die ejector 116 through the optical displacement sensor 180 , the flatness of the ejector pins 1165 and the deformation of the die 20 can be measured.

[0073] The optical displacement sensor 180 includes a light-transmitting portion 180A disposed on one side of the die ejector 116 and irradiating light toward the upper region of the die ejector 116, and a light-receiving portion 180B disposed on the opposite side of the light-transmitting portion 180A across the die ejector 116 and receiving the light irradiated by the light-transmitting portion 180A to measure the deformation of the die 20 and the flatness of the ejector pin 1165. The light-transmitting portion 180A disposed on one side of the die ejector 116 may irradiate light in the form of a line beam or a surface beam, and the deformation of the die 20 and the flatness of the ejector pin 1165 may be measured from the light received at the light-receiving portion 180B.

[0074] The pressure applied to the ejector pins 1165 may be measured by a sensor coupled to the ejector pins 1165. The deformation amount of the die 20 and the flatness of the ejector pins 1165 may be measured based on the pressure measured when the ejector pins 1165 contact the die 20.

[0075] Fig.10 FIG. 1 shows a process of generating map data 1000 showing the quality of the die 20 according to the present invention. Fig.10 , the map data 1000 presenting the quality of each die 20 in the wafer 10 can generate a weighted sum of first quality data 1010 related to the spacing distribution between the die 20, second quality data 1020, 1030 related to numerical information obtained during the picking process of the die 20, and third quality data 1040 related to sensing information detected during the peeling process of the die 20.

[0076] The value QS showing the quality of a specific die 20 in the wafer 10 can be determined as QS=W1*QS1+W2*QS2+W3*QS3. Here, QS1 is the quality value of the specific die 20 in the first quality data 1010, QS2 is the quality value of the specific die 20 in the second quality data 1020, 1030, and QS3 is the quality value of the specific die 20 in the third quality data 1040, and W1, W2, and W3 are weighted values ​​applied to QS1, QS2, and QS3, respectively (W1+W2+W3=1). It can be that the die quality data composed of the quality values ​​of each die 20 is generated, and the map data 1000 showing the quality of each die 20 in the wafer 10 is output as a visual image. For example, if the quality value of the die 20 is in the high quality range, it is marked in blue, if the quality value of the die 20 is in the middle quality range, it is marked in yellow, and if the quality value of the die 20 is in the low quality range, it is marked in red.

[0077] This embodiment and the drawings attached to this specification only explicitly illustrate a part of the technical concept included in the present invention. It is obvious that all the modified examples and specific embodiments that can be easily inferred by technicians in this field within the scope of the technical concept included in the specification and drawings of the present invention are included in the scope of rights of the present invention.

[0078] Therefore, the concept of the present invention is not limited to the described embodiments, and not only the claims described below, but also all equivalent or equivalent modifications to the claims belong to the scope of the concept of the present invention.

Claims

1. A die bonding device, wherein: include: A wafer stage, supporting wafers divided into bare die units; a die ejector that selectively separates the die from the dicing tape in the wafer stage; A bare die transfer module, picking up and transferring the bare die from the wafer stage; A die stage, which places the die from the die transfer module and performs inspection on the die; A die bonding module, picking up the die from the die stage and bonding the die to a substrate; A bonding station, which moves the substrate and transfers the bonded substrate to a material box; as well as a processor, generating map data representing the quality of each die, The processor generates map data representing the quality of each die in the wafer based on first quality data related to the spacing distribution between the dies, second quality data related to numerical information obtained during the picking process of the dies, and third quality data related to sensing information detected during the peeling process of the dies.

2. The die bonding apparatus according to claim 1, wherein: The spacing distribution between the dies is measured by a camera located above the wafer stage.

3. The die bonding apparatus according to claim 1, wherein: The second quality data includes vacuum pressure data applied from the die ejector to the dicing tape and pick-up success rate data performed by the die transfer module.

4. The die bonding apparatus according to claim 3, wherein: The flatness between the die ejector and the wafer stage is measured by the vacuum pressure applied from the die ejector to the dicing tape.

5. The die bonding apparatus according to claim 3, wherein: The picking success rate data performed by the die transfer module is defined as the ratio of the number of successful pickings to the number of picking attempts by the die transfer module.

6. The die bonding apparatus according to claim 1, wherein: The third quality data includes deformation data of the die detected at a time point of peeling of the die and flatness data of an ejector pin used to eject the die in the die ejector.

7. The die bonding apparatus according to claim 6, wherein: The deformation data of the die and the flatness data of the ejector pins are measured by an optical displacement sensor disposed around the die ejector.

8. The die bonding apparatus according to claim 7, wherein: The optical displacement sensor comprises: a light-transmitting portion, disposed on one side of the die ejector and irradiating light toward an upper area of ​​the die ejector; and The light receiving portion is disposed on the opposite side of the light transmitting portion across the die ejector, and receives light irradiated through the light transmitting portion to measure the deformation amount of the die and the flatness of the ejector pins.

9. The die bonding apparatus according to claim 1, wherein: The processor generates map data representing the quality of each die in the wafer by calculating a weighted sum of the first quality data, the second quality data, and the third quality data.

10. A die bonding method, performed by a die bonding device, wherein: The die bonding method comprises: In a wafer stage, a step of forming spaces between the dies in a wafer attached to a dicing tape in a state of being divided into dies; The step of peeling the die from the dicing tape using a die ejector located below the wafer; The step of picking up the die by a die transfer module; The step of placing the die on a die stage and inspecting the die; The step of picking up the die by a die bonding module and bonding the die to a substrate; and the step of generating map data representing the quality of each die in the wafer, The step of generating the map data includes the step of generating map data presenting the quality of each die in the wafer based on first quality data related to the spacing distribution between the die, second quality data related to numerical information obtained during the picking process of the die, and third quality data related to sensing information detected during the peeling process of the die.

11. The die bonding method according to claim 10, wherein: The spacing distribution between the dies is measured by a camera located above the wafer stage.

12. The die bonding method according to claim 10, wherein: The second quality data includes vacuum pressure data applied from the die ejector to the dicing tape and pick-up success rate data performed by the die transfer module.

13. The die bonding method according to claim 12, wherein: The flatness between the die ejector and the wafer stage is measured by the vacuum pressure applied from the die ejector to the dicing tape.

14. The die bonding method according to claim 12, wherein: The picking success rate data performed by the die transfer module is defined as the ratio of the number of successful pickings to the number of picking attempts by the die transfer module.

15. The die bonding method according to claim 10, wherein: The third quality data includes deformation data of the die detected at a time point of peeling of the die and flatness data of an ejector pin used to eject the die in the die ejector.

16. The die bonding method according to claim 15, wherein: The deformation data of the die and the flatness data of the ejector pins are measured by an optical displacement sensor disposed around the die ejector.

17. The die bonding method according to claim 16, wherein: The optical displacement sensor comprises: a light-transmitting portion, disposed on one side of the die ejector and irradiating light toward an upper area of ​​the die ejector; and The light receiving unit is provided on the opposite side of the light transmitting unit across the die ejector and receives the light irradiated through the light transmitting unit to measure the deformation amount of the die and the flatness of the ejector pins.

18. The die bonding method according to claim 10, wherein: The step of generating the map data includes the step of generating the map data representing the quality of each die in the wafer by calculating a weighted sum of the first quality data, the second quality data, and the third quality data.

19. A die bonding apparatus, wherein: include: A wafer stage, supporting wafers divided into bare die units; a camera, located above the wafer stage and identifying the position of the die; a die ejector that selectively separates the die from the dicing tape in the wafer stage; A bare die transfer module, picking up and transferring the bare die from the wafer stage; A die stage, which places the die from the die transfer module and performs inspection on the die; A die bonding module, picking up the die from the die stage and bonding the die to a substrate; A bonding station, which moves the substrate and transfers the bonded substrate to a material box; as well as a processor, generating map data representing the quality of each die, The processor generates map data representing the quality of each die in the wafer based on a weighted sum of first quality data related to the spacing distribution between the dies, second quality data related to numerical information obtained during the picking process of the dies, and third quality data related to sensing information detected during the peeling process of the dies, The spacing distribution between the dies is measured by a camera located above the wafer stage. The second quality data includes vacuum pressure data applied to the dicing tape from the die ejector and a pick-up success rate data defined as a ratio of the number of pick-up successes to the number of pick-up attempts by the die transfer module, measuring the flatness between the die ejector and the wafer stage by applying vacuum pressure from the die ejector to the dicing tape, The third quality data includes deformation data of the die detected at a time point of peeling of the die and flatness data of an ejector pin used to eject the die in the die ejector.

20. The die bonding apparatus according to claim 19, wherein: The deformation data of the die and the flatness data of the ejector pin are measured by an optical displacement sensor disposed around the die ejector. The optical displacement sensor comprises: a light-transmitting portion, disposed on one side of the die ejector and irradiating light toward an upper area of ​​the die ejector; and The light receiving portion is disposed on the opposite side of the light transmitting portion across the die ejector, and receives light irradiated through the light transmitting portion to measure the deformation amount of the die and the flatness of the ejector pins.

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