Integrated smart metasurface

Abstract

The application discloses an integrated intelligent metasurface, and belongs to the technical field of antenna engineering. In each metasurface unit of the integrated intelligent metasurface, two function electrodes of one phase modulation switch are electrically connected with a first radiation sheet and a second radiation sheet respectively, and two function electrodes of another phase modulation switch are electrically connected with the second radiation sheet and a third radiation sheet respectively. A two-dimensional electron gas layer of one phase modulation switch forms ohmic contact connection with a first control electrode and a second control electrode respectively, and a two-dimensional electron gas layer of another phase modulation switch forms ohmic contact connection with a third control electrode and a fourth control electrode respectively. The first control electrode and the second control electrode control the open and close states of one phase modulation switch, and the third control electrode and the fourth control electrode control the open and close states of another phase modulation switch, so that 2bit phase modulation is realized by using single-layer two phase modulation switches, and the integrated intelligent metasurface has low coupling capacitance, which is beneficial to reducing insertion loss and improving gain.

Description

Technical Field

[0001] This application belongs to the field of antenna engineering technology, and in particular relates to an integrated smart metasurface. Background Technology

[0002] Currently, 6G communication technology has put forward a series of requirements in terms of data transmission rate, number of connections, and latency. Since terahertz communication technology in the frequency range of 0.1THz to 10THz has ultra-large bandwidth and ultra-high communication rate, it has become one of the core technologies in 6G communication technology.

[0003] To overcome the severe path loss and high cost in terahertz communication, integrated smart metasurfaces are typically deployed between base stations and end users. However, in the high-frequency band, existing phase-modulation switches result in significant insertion loss for integrated smart metasurfaces. How to reduce insertion loss and improve gain is a key research direction in the field of terahertz communication technology. Summary of the Invention

[0004] This application provides an integrated smart metasurface designed to reduce insertion loss and increase gain, thereby achieving high bit response in the terahertz high-frequency band and enabling wide-coverage ultrawideband high-efficiency beam scanning.

[0005] The integrated smart metasurface includes multiple metasurface units. Each metasurface unit includes a substrate, a ground plane disposed on one side of the substrate, and a first radiating plate, a second radiating plate, a third radiating plate, two phase switching switches, a first control electrode, a second control electrode, a third control electrode, and a fourth control electrode disposed on the side of the substrate away from the ground plane.

[0006] The phase-shifting switch includes a two-dimensional electron gas layer and two functional electrodes stacked sequentially on a substrate. In the two phase-shifting switches, the two functional electrodes of one phase-shifting switch are electrically connected to the first radiating plate and the second radiating plate, respectively, and the two functional electrodes of the other phase-shifting switch are electrically connected to the second radiating plate and the third radiating plate, respectively.

[0007] In the two phase-shifting switches, the two-dimensional electron gas layer of one phase-shifting switch forms an ohmic contact connection with the first control electrode and the second control electrode, respectively, and the two-dimensional electron gas layer of the other phase-shifting switch forms an ohmic contact connection with the third control electrode and the fourth control electrode, respectively.

[0008] In some embodiments, the two phase-shifting switches include a first phase-shifting switch and a second phase-shifting switch. The two-dimensional electron gas layer of the first phase-shifting switch includes a first control line and a first active region, and the two-dimensional electron gas layer of the second phase-shifting switch includes a second control line and a second active region. The orthographic projection of the first active region onto the substrate overlaps with the orthographic projections of the two functional electrodes of the first phase-shifting switch onto the substrate. The first control line forms ohmic contact connections with the first control electrode and the second control electrode, respectively. The orthographic projection of the second active region onto the substrate overlaps with the orthographic projections of the two functional electrodes of the second phase-shifting switch onto the substrate. The second control line forms ohmic contact connections with the third control electrode and the fourth control electrode, respectively.

[0009] In some embodiments, the phase-shifting switch further includes two conductive bridges. The two phase-shifting switches include a first phase-shifting switch and a second phase-shifting switch. One functional electrode of the first phase-shifting switch is sequentially connected to a first radiating plate via a conductive bridge, and the other functional electrode of the first phase-shifting switch is sequentially connected to a second radiating plate via another conductive bridge. One functional electrode of the second phase-shifting switch is sequentially connected to a second radiating plate via a conductive bridge, and the other functional electrode of the second phase-shifting switch is sequentially connected to a third radiating plate via another conductive bridge.

[0010] In some embodiments, the metasurface unit further includes a third control line, a fourth control line, and a fifth control line disposed on the side of the substrate away from the ground plane, wherein the third control line is electrically connected to the first radiating sheet, the fourth control line is electrically connected to the third radiating sheet, and the fifth control line is electrically connected to the second radiating sheet.

[0011] In some embodiments, the first radiating sheet, the second radiating sheet, and the third radiating sheet are arranged along a first direction parallel to the substrate, the first control electrode and the second control electrode are arranged along a second direction parallel to the substrate, and the third control electrode and the fourth control electrode are arranged along the second direction, with the first direction intersecting the second direction.

[0012] In some embodiments, the shapes of the first radiating sheet, the second radiating sheet, and the third radiating sheet include one of a rectangle, a square, or an n-sided polygon, where n ≥ 5.

[0013] In some embodiments, the side of the two-dimensional electron gas layer closest to the substrate further includes an active layer, and the side of the two-dimensional electron gas layer furthest from the substrate further includes a barrier layer. The active layer is made of a group IIIA-VA material, and the barrier layer is made of a group IIIA-VA material.

[0014] In some embodiments, the active layer is made of GaN, and the barrier layer is made of AlGaN.

[0015] In some embodiments, multiple metasurface units are arranged in an array, including multiple rows and multiple columns. Each metasurface unit contains two phase-modulation switches, including a first phase-modulation switch and a second phase-modulation switch. The two-dimensional electron gas layers of the first phase-modulation switches in each row of metasurface units are connected, and the two-dimensional electron gas layers of the second phase-modulation switches in each row of metasurface units are connected. And / or, the first radiating plates in each row of metasurface units are connected, the second radiating plates in each row of metasurface units are connected, and the third radiating plates in each row of metasurface units are connected.

[0016] In this embodiment, the integrated smart metasurface includes multiple metasurface units, each metasurface unit including two phase-modulation switches. Each phase-modulation switch includes a two-dimensional electron gas layer and two functional electrodes stacked sequentially on a substrate. The two functional electrodes of one phase-modulation switch are electrically connected to a first radiating plate and a second radiating plate, respectively, and the two functional electrodes of the other phase-modulation switch are electrically connected to a second radiating plate and a third radiating plate, respectively. Since each phase-modulation switch has two states, on and off, the on and off states generate a 180° phase difference. Using binary "0" digital codes to represent the off state and binary "1" digital codes to represent the on state, the two phase-modulation switches in this application have four states: "00", "01", "10", and "11", achieving 2-bit phase modulation based on the two phase-modulation switches.

[0017] Furthermore, the two-dimensional electron gas layer of one phase-modulating switch forms ohmic contact connections with the first and second control electrodes, respectively, while the two-dimensional electron gas layer of the other phase-modulating switch forms ohmic contact connections with the third and fourth control electrodes, respectively. In this embodiment, the on / off state of the phase-modulating switch can be controlled by controlling the two-dimensional electron gas layers through the corresponding control electrodes. Unlike transistors, the phase-modulating switch in this application has no gate and does not require gate traces, resulting in a simpler structure. Moreover, based on this phase-modulating switch structure, the equivalent capacitance and resistance of the integrated intelligent metasurface in this application are significantly reduced, thereby reducing insertion loss and increasing gain. Attached Figure Description

[0018] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0019] Figure 1 A schematic diagram of an integrated smart metasurface provided in an embodiment of this application;

[0020] Figure 2 A partial schematic diagram of a metasurface unit provided in an embodiment of this application;

[0021] Figure 3 for Figure 1A cross-sectional view of the integrated intelligent metasurface along section line AA';

[0022] Figure 4 An equivalent circuit diagram provided for an embodiment of this application;

[0023] Figure 5 A metasurface unit phase modulation map provided in this application embodiment;

[0024] Figure 6 This is a schematic diagram of the phase switching switch's on / off state provided in an embodiment of this application;

[0025] Figure 7 This is a schematic diagram of the phase switching switch in the open state provided in an embodiment of this application. Detailed Implementation

[0026] The technical solutions in some embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application are within the scope of protection of this application.

[0027] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open and encompassing, that is, "including, but not limited to".

[0028] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this application, unless otherwise stated, "a plurality of" means two or more.

[0029] In describing some embodiments, the term "connection" and its derivative expressions may be used. The term "connection" should be interpreted broadly; for example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. For example, in describing some embodiments, the term "connection" may be used to indicate that two or more components have direct physical or electrical contact with each other.

[0030] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0031] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0032] This document describes exemplary embodiments with reference to cross-sectional views, which are intended as idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations caused, for example, by manufacturing processes. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0033] Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0034] In related research, to overcome the severe path loss and high cost in microwave high-frequency and terahertz communications, integrated smart metasurfaces are typically deployed between base stations and end users to enable flexible phase modulation and precise beam focusing. However, commonly used semiconductor switching elements and classical beam manipulation methods are limited by response speed or system complexity, making them difficult to apply in the high-frequency (0.1 THz and above) terahertz band. Furthermore, integrated smart metasurfaces applicable to the high-frequency band suffer from significant insertion loss in related research.

[0035] To address the aforementioned issues, this application provides an integrated smart metasurface designed to reduce insertion loss, increase gain, and thereby achieve high bit response in the high-frequency band and enable wide-coverage, ultra-wideband, high-efficiency beam scanning.

[0036] like Figures 1-2 As shown, Figure 1 This is a schematic diagram of an integrated smart metasurface provided in an embodiment of this application. Figure 2 This is a partial schematic diagram of a metasurface unit provided in an embodiment of this application.

[0037] The integrated smart metasurface 1 includes multiple metasurface units 10. Each metasurface unit 10 includes a substrate 101, a ground plane 102 disposed on one side of the substrate 101, and a first radiating plate 21, a second radiating plate 22, a third radiating plate 23 disposed on the side of the substrate 101 away from the ground plane 102, two phase switches 30, a first control electrode 41, a second control electrode 42, a third control electrode 43, and a fourth control electrode 44. One of the two phase switches 30 can be referred to as the first phase switch 31, and the other as the second phase switch 32.

[0038] The phase-shifting switch 30 includes a two-dimensional electron gas layer 103 and two functional electrodes 60 stacked sequentially on the substrate 101. In the two phase-shifting switches 30, the two functional electrodes 60 of the first phase-shifting switch 31 are electrically connected to the first radiating plate 21 and the second radiating plate 22, respectively, and the two functional electrodes 60 of the second phase-shifting switch 32 are electrically connected to the second radiating plate 22 and the third radiating plate 23, respectively.

[0039] The two-dimensional electron gas layer 103 of the first phase-shifting switch 31 forms an ohmic contact connection with the first control electrode 41 and the second control electrode 42, respectively. The two-dimensional electron gas layer 103 of the second phase-shifting switch 32 forms an ohmic contact connection with the third control electrode 43 and the fourth control electrode 44, respectively.

[0040] In the embodiments of this application, the integrated smart metasurface 1 is implemented by improving upon the HEMT device structure. For example, as shown... Figure 3 As shown, Figure 3 for Figure 1 A cross-sectional view of the integrated intelligent metasurface along section line AA'.

[0041] For example, the ground plane 102 is made of metal, serving two purposes: firstly, to form a resonant cavity with the corresponding radiating plate to modulate the radiated wave, and secondly, to provide operational grounding. The substrate 101 can be a sapphire substrate, or a semiconductor with other crystalline structures, such as silicon carbide or high-resistivity silicon. For example, the thickness of the substrate 101 is 0.2 nm.

[0042] Correspondingly, the film structure between the substrate 101 and the functional electrode 60 is the epitaxial structure of the phase-modulation switch 30. It can be understood that the first radiating plate 21, the second radiating plate 22, and the third radiating plate 23 are all located on the surface of the epitaxial structure of the phase-modulation switch 30 away from the substrate 101.

[0043] In the epitaxial structure of the phase-modulation switch 30, the two-dimensional electron gas layer 103 includes an active layer 104 on the side closer to the substrate 101, and a barrier layer 105 on the side farther from the substrate 101. The two-dimensional electron gas layer 103 here is formed by the formation of a heterostructure between the active layer 104 and the barrier layer 105.

[0044] To avoid lattice mismatch and dislocation, a buffer layer 1011 is provided between the substrate 101 and the active layer 104 in some embodiments. To achieve good conductivity, an insertion layer 1051 is provided between the active layer 104 and the barrier layer 105 in some embodiments.

[0045] Since the two-dimensional electron gas layer 103 of the first phase-modulation switch 31 forms an ohmic contact connection with the first control electrode 41 and the second control electrode 42 respectively, the electron concentration in the two-dimensional electron gas layer 103 can be adjusted by applying voltage to the first control electrode 41 and the second control electrode 42. When the electron concentration in the two-dimensional electron gas layer 103 is high, its microwave circuit can be equivalent to a small resistor and a large capacitor, and the first phase-modulation switch 31 is in the on state. When the electron concentration in the two-dimensional electron gas layer 103 is low, its microwave circuit can be equivalent to a large resistor and a small capacitor, and the first phase-modulation switch 31 is in the off state.

[0046] Similarly, since the two-dimensional electron gas layer 103 of the second phase-shifting switch 32 forms an ohmic contact connection with the third control electrode 43 and the fourth control electrode 44 respectively, the opening and closing state of the second phase-shifting switch 32 can be controlled by applying voltage to the third control electrode 43 and the fourth control electrode 44.

[0047] This embodiment of the application utilizes two single-layer phase modulation switches 30 to achieve 2-bit phase modulation. The working principle under ideal conditions is as follows:

[0048] Since the two functional electrodes 60 of the first phase modulation switch 31 are electrically connected to the first radiating plate 21 and the second radiating plate 22 respectively, and the two functional electrodes 60 of the second phase modulation switch 32 are electrically connected to the second radiating plate 22 and the third radiating plate 23 respectively, the opening and closing states of the first phase modulation switch 31 and the second phase modulation switch 32 will affect the coupling state of the resonant cavities corresponding to the first radiating plate 21, the second radiating plate 22 and the third radiating plate 23 during the radiation wave modulation process.

[0049] For example, when the first phase modulation switch 31 is open, it is equivalent to a small capacitor and a large resistor state, represented by a binary "1" digital code. When the first phase modulation switch 31 is closed, it is equivalent to a large capacitor and a small resistor state, represented by a binary "0" digital code. Based on this, the two phase modulation switches in this application have four states: "00", "01", "10", and "11". The first bit of the code represents the state of the first switch modulator 31, and the second bit represents the state of the second switch modulator 32. For example, the "01" state represents the first switch modulator 31 being closed and the second switch modulator 32 being open, and so on.

[0050] Furthermore, in the equivalent circuit, the change in the opening and closing state of the phase switching switch 30 can be equivalent to the change in capacitance. Based on this, the aforementioned change in coupling state can be understood through the change in an equivalent circuit.

[0051] like Figure 4 As shown, Figure 4 An equivalent circuit diagram is provided for an embodiment of this application.

[0052] In some embodiments, the second radiating plate 22 is designed based on a fundamental phase φ1, such that the initial phase of the metasurface unit in the "00" state is φ1. The equivalent circuit of the metasurface unit is as follows: Figure 4 The circuit shown within the dashed box P is a parallel circuit of capacitor, inductor, and resistor. Preferably, the phase angle of φ1 is less than -90°.

[0053] When the metasurface unit is in the "01" state, its phase is φ1+90°. At this time, the first switch modulator 31 is turned on, and the resonant cavities corresponding to the second radiator 22 and the first radiator 21 are coupled. Based on this, the first radiator 21 is designed according to the phase φ1+180°, as follows... Figure 4 As shown within the dashed box Q, compared to the "00" state, the changing inductance L corresponds to the equivalent inductance of the first radiating plate 21, and the changing capacitance C corresponds to the equivalent capacitance resulting from the superposition of the first switching modulator 31 and the first radiating plate 21. By rationally designing the first radiating plate 21, the values ​​of the aforementioned equivalent inductance and equivalent capacitance can be adjusted, thereby adjusting the equivalent circuit of the metasurface unit in this state until the phase of the metasurface unit in this state is φ1+90°.

[0054] When the metasurface unit is in state "10", its phase is φ1+180°. At this time, the second switch modulator 32 is turned on, and the resonant cavities corresponding to the second radiator 22 and the third radiator 23 are coupled. Similar to the design process of the first radiator 21 described earlier, the third radiator 23 is designed based on the phase φ1+270°, and the equivalent circuit of the metasurface unit in this state is adjusted until the phase of the metasurface unit in this state is φ1+180°.

[0055] When the metasurface unit is in state "11", the phase of the metasurface unit is φ1+270°. At this time, both the first switch modulator 31 and the second switch modulator 32 are turned on, and the resonant cavities corresponding to the first radiating plate 21, the second radiating plate 22 and the third radiating plate 23 are coupled.

[0056] For example, such as Figure 5 As shown, Figure 5 A metasurface unit phase modulation map is provided as an embodiment of this application. (By...) Figure 5 As can be seen, the integrated smart metasurface in this application embodiment can form four phase states for control by integrating two phase switching switches 30 and three radiating plates, achieving 2-bit phase modulation, and ultimately realizing phase control within a 360° range.

[0057] Furthermore, unlike transistors, this embodiment improves upon the HEMT device structure. The two-dimensional electron gas layer 103 of the first phase-shifting switch 31 forms ohmic contact connections with the first control electrode 41 and the second control electrode 42, respectively. The two-dimensional electron gas layer 103 of the second phase-shifting switch 32 forms ohmic contact connections with the third control electrode 43 and the fourth control electrode 44, respectively. The first control electrode 41, the second control electrode 42, the third control electrode 43, and the fourth control electrode 44 are used to connect an external control power supply. Based on this, the number of traces can be reduced and physical space can be saved on the surface where the four control electrodes are located.

[0058] In controlling the phase-modulation switch 30, the conduction or disconnection state of the phase-modulation switch 30 is controlled by controlling the two-dimensional electron gas layer 103 through corresponding control electrodes. That is, the phase-modulation switch 30 in this application has no gate and does not require gate traces, resulting in a simpler structure. Traditional HEMT devices require transistors to form gates; however, terahertz devices have limited physical space and are difficult to drill densely, leading to high precision requirements and difficult fabrication of gates in devices suitable for terahertz communication. The integrated smart metasurface provided in this application avoids this problem by eliminating the need for a gate.

[0059] Furthermore, compared to the transistors in traditional HEMT device structures, the coupling capacitance formed by the two-dimensional electron gas layer 103 and the corresponding functional electrode 60 in the phase-shifting switch 30 of this application is very small, resulting in a smaller equivalent capacitance and resistance of the integrated smart metasurface, thereby reducing insertion loss and increasing gain. For example, compared with phase-shifting switches in related technologies, the insertion loss of the phase-shifting switch in this application is reduced by no less than 5dB.

[0060] In some embodiments, such as Figure 2As shown, the two-dimensional electron gas layer 103 of the first phase-shifting switch 31 includes a first control line 51 and a first active region 510, and the two-dimensional electron gas layer 103 of the second phase-shifting switch 32 includes a second control line 52 and a second active region 520. The orthographic projection of the first active region 510 on the substrate 101 overlaps with the orthographic projection of the two functional electrodes 60 of the first phase-shifting switch 31 on the substrate 101. The first control line 51 is electrically connected to the first control electrode 41 and the second control electrode 42. The orthographic projection of the second active region 520 on the substrate 101 overlaps with the orthographic projection of the two functional electrodes 60 of the second phase-shifting switch 32 on the substrate 101. The second control line 52 is electrically connected to the third control electrode 43 and the fourth control electrode 44.

[0061] It is understandable that neither the first control line 51 nor the second control line 52 are solid structures, but rather virtual structures equivalent to connecting lines formed during the fabrication process by controlling the morphology of the two-dimensional electron gas layer 103. The first control line 51 is the control line of the two-dimensional electron gas layer 103 acting as the first phase-shifting switch 31, utilizing the conductivity of the two-dimensional electron gas. Applying voltage to the first control electrode 41 and the second control electrode 42 can be equivalently considered as applying voltage to the first control line 51. Similarly, the second control line 52 is the control line of the two-dimensional electron gas layer 103 acting as the second phase-shifting switch 32, utilizing the conductivity of the two-dimensional electron gas. Applying voltage to the third control electrode 43 and the fourth control electrode 44 can be equivalently considered as applying voltage to the second control line 52.

[0062] The orthographic projection of the first active region 510 on the substrate 101 overlaps with the orthographic projection of the two functional electrodes 60 of the first phase switch 31 on the substrate 101. By controlling the magnitude of the voltage applied to the two functional electrodes 60 of the first phase switch 31 and the first control line 51, the two-dimensional electron gas concentration of the first active region 510 can be controlled, thereby controlling the opening and closing state of the first phase switch 31.

[0063] Similarly, the orthographic projection of the second active region 520 onto the substrate 101 overlaps with the orthographic projection of the two functional electrodes 60 of the second phase-shifting switch 32 onto the substrate 101. By controlling the magnitude of the voltage applied to the two functional electrodes 60 of the second phase-shifting switch 32 and the second control line 52, the two-dimensional electron gas concentration of the second active region 520 can be controlled, thereby controlling the opening and closing state of the second phase-shifting switch 32.

[0064] Based on this, the wiring design of the metasurface unit can be saved, that is, the wiring design on the surface of the epitaxial structure of the phase switch 30 away from the substrate 101 can be saved, thus saving physical space.

[0065] In some embodiments, such as Figure 2As shown, each phase-shifting switch 30 also includes two conductive bridges 61. One functional electrode 60 of the first phase-shifting switch 31 is sequentially connected to the first radiating plate 21 via a conductive bridge 61, and the other functional electrode 60 of the first phase-shifting switch 31 is sequentially connected to the second radiating plate 22 via another conductive bridge 61. One functional electrode 60 of the second phase-shifting switch 32 is sequentially connected to the second radiating plate 22 via a conductive bridge 61, and the other functional electrode 60 of the second phase-shifting switch 32 is sequentially connected to the third radiating plate 23 via another conductive bridge 61.

[0066] For example, such as Figure 2 As shown, the functional electrode 60 is located on the same surface as the first radiating plate 21, the second radiating plate 22, and the third radiating plate 23. The conductive bridge 61 is used to achieve a good electrical connection between the functional electrode 60 and the corresponding first radiating plate 21, second radiating plate 22, or third radiating plate 23. The presence of the conductive bridge 61 makes the electrical connection between the functional electrode 60 and the corresponding radiating plate more convenient, that is, it does not affect the function of the functional electrode 60 in controlling the two-dimensional electron gas concentration in the corresponding active region, nor does it affect the function of the corresponding radiating plate.

[0067] like Figures 6-7 As shown, Figure 6 This is a schematic diagram of the phase-shifting switch's on / off state provided in an embodiment of this application. Figure 7 This is a schematic diagram of the phase switching switch in the open state provided in an embodiment of this application.

[0068] Taking the first phase-shifting switch 31 as an example, by applying voltage to the first control electrode 41 and / or the second control electrode 42, the concentration of two-dimensional electron gas in the first active region 510 can be adjusted under the conductivity of the first control line 51. When the concentration of two-dimensional electron gas is high, the two functional electrodes 60 can be electrically connected through the corresponding higher concentration of two-dimensional electron gas in the first active region 510, thereby making the first phase-shifting switch 31 in the on state. Correspondingly, when the concentration of two-dimensional electron gas is low, a good electrical connection cannot be achieved between the two functional electrodes 60, thereby making the first phase-shifting switch 31 in the off state.

[0069] The same applies to the second phase-adjusting switch 32.

[0070] In some embodiments, such as Figure 2 As shown, the metasurface unit 10 also includes a third control line 71, a fourth control line 72 and a fifth control line 73 disposed on the side of the substrate 101 away from the ground plane 102. The third control line 71 is electrically connected to the first radiating plate 21, the fourth control line 72 is electrically connected to the third radiating plate 23, and the fifth control line 73 is electrically connected to the second radiating plate 22.

[0071] It is understandable that the third control line 71, the fourth control line 72 and the fifth control line 73 are traces set on the same layer as the first radiating sheet 21, the second radiating sheet 22 and the third radiating sheet 23, and belong to the solid structure.

[0072] The third control line 71 is electrically connected to the first radiating plate 21, and the first radiating plate 21 is electrically connected to one functional electrode 60 of the first phase-shifting switch 31. Neglecting voltage loss, the voltage value at the third control line 71 is approximately equal to the voltage value at the corresponding functional electrode 60. The fifth control line 73 is electrically connected to the second radiating plate 22, and the second radiating plate 22 is electrically connected to the other functional electrode 60 of the first phase-shifting switch 31. Neglecting voltage loss, the voltage value at the fifth control line 73 is approximately equal to the voltage value at the corresponding functional electrode 60.

[0073] Based on this, the third control line 71 and the fifth control line 73 are used to connect one end of the control power supply of the first phase switching switch 31, and the first control electrode 41 and the second control electrode 42 (equivalent to the first control line 51) are used to connect the other end of the control power supply of the first phase switching switch 31, thereby controlling the opening and closing state of the first phase switching switch 31.

[0074] For example, in some embodiments, when the first control electrode 41 and the second control electrode 42 are grounded (i.e., equivalent to the first control line 51 being grounded), and the third control line 71 and the fifth control line 73 are connected to positive voltage, the two-dimensional electron gas concentration in the first active region 510 corresponding to the two functional electrodes 60 is low due to voltage influence, and a good electrical connection cannot be formed between the two functional electrodes 60, so the first phase switching switch 31 is in the off state. When the first control electrode 41 and the second control electrode 42 are grounded (i.e., equivalent to the first control line 51 being grounded), and the third control line 71 is not energized or is connected to 0V, the first phase switching switch 31 is in the on state.

[0075] Alternatively, in some other embodiments, when the first control electrode 41 and the second control electrode 42 are connected to negative voltage (that is, equivalent to the first control line 51 being connected to negative voltage), and the third control line 71 and the fifth control line 73 are grounded, the two-dimensional electron gas concentration in the first active region 510 region corresponding to the two functional electrodes 60 is low, and a good electrical connection cannot be formed between the two functional electrodes 60, and the first phase switching switch 31 is in the off state.

[0076] Similarly, referring to the above control method, when the third control electrode 43 and the fourth control electrode 44 are grounded (i.e., the second control line 52 is grounded), and the fourth control line 72 and the fifth control line 73 are connected to positive voltage, the second phase-shifting switch 32 is in the open state. When the third control electrode 43 and the fourth control electrode 44 are grounded (i.e., the second control line 52 is grounded), and the fourth control line 72 is not energized or is connected to 0V, the second phase-shifting switch 32 is in the closed state.

[0077] Alternatively, in some other embodiments, when the third control electrode 43 and the fourth control electrode 44 are connected to negative voltage (that is, the second control line 52 is connected to negative voltage) and the fourth control line 72 and the fifth control line 73 are grounded, the second phase switching switch 32 is in the off state.

[0078] In some embodiments, such as Figure 2 As shown, the shapes of the first radiating plate 21, the second radiating plate 22, and the third radiating plate 23 include one of a rectangle, a square, or an n-sided polygon, where n ≥ 5.

[0079] Based on the working principle of using two phase-shifting switches 30 to form a 2-bit phase shift, as described above, the parameters of the equivalent inductance and equivalent capacitance in the equivalent circuit can be adjusted by changing the shape and size of the first radiating plate 21, the second radiating plate 22, and the third radiating plate 23. With proper design, an ideal phase shifting effect can be achieved.

[0080] As mentioned earlier, the two-dimensional electron gas layer 103 is formed by the heterostructure of the active layer 104 and the barrier layer 105. In order to form a good two-dimensional electron gas layer 103, in some embodiments, the active layer 104 is made of group IIIA-VA materials, and the barrier layer 105 is made of group IIIA-VA materials, such as silicon, gallium, nitrogen, arsenic, germanium, etc.

[0081] For example, in some embodiments, the active layer 104 is made of GaN, and the barrier layer 105 is made of AlGaN. Based on this, as... Figure 3 As shown, in some embodiments, an insertion layer 1051 is also provided between the active layer 104 and the barrier layer 105, and the material of the insertion layer 1051 includes AlN. In addition, the material of the buffer layer 1011 includes Al(Ga)N.

[0082] GaN and AlGaN can form a heterojunction, and a two-dimensional potential well is formed at the heterojunction interface. Positive charges attract electrons to form a two-dimensional electron gas in the potential well. The two-dimensional electron gas is confined in the potential well and can only move in two dimensions along a plane parallel to the heterojunction interface. Based on this, by controlling the activity space of the two-dimensional electron gas, the first control line 51 and the second control line 52 can be formed.

[0083] In some embodiments, such as Figure 2 As shown, the first radiating plate 21, the second radiating plate 22 and the third radiating plate 23 are arranged along a first direction Y parallel to the substrate 101, the first control electrode 41 and the second control electrode 42 are arranged along a second direction X parallel to the substrate 101, and the third control electrode 43 and the fourth control electrode 44 are arranged along the second direction X. The first direction Y intersects the second direction X.

[0084] In some embodiments, such as Figure 1As shown, multiple metasurface units 10 are arranged in an array, including multiple rows and multiple columns. Each metasurface unit 10 has two phase switching switches 30, including a first phase switching switch 31 and a second phase switching switch 32.

[0085] The two-dimensional electron gas layers 103 of the first phase switching switch 31 of each row of metasurface units 10 are connected, and the two-dimensional electron gas layers 103 of the second phase switching switch 32 of each row of metasurface units 10 are connected.

[0086] Alternatively, the first radiating plates 21 of each row of metasurface units 10 are connected, the second radiating plates 22 of each row of metasurface units 10 are connected, and the third radiating plates 23 of each row of metasurface units 10 are connected.

[0087] Alternatively, the two-dimensional electron gas layers 103 of the first phase switching switch 31 of each row of metasurface units 10 are connected, the two-dimensional electron gas layers 103 of the second phase switching switch 32 of each row of metasurface units 10 are connected, and the first radiating sheet 21 of each row of metasurface units 10 is connected, the second radiating sheet 22 of each row of metasurface units 10 is connected, and the third radiating sheet 23 of each row of metasurface units 10 is connected.

[0088] In the above embodiment, the directions of the first control line 51, the second control line 52, the third control line 71, and the fourth control line 72 are all parallel to the second direction X. The third control lines 71 of each row of multiple metasurface units 10 are connected, thereby connecting the first radiating plates 21 of the multiple metasurface units 10. The fourth control lines 72 of each row of multiple metasurface units 10 are connected, thereby connecting the third radiating plates 23 of the multiple metasurface units 10. The fifth control lines 73 of each row of multiple metasurface units 10 are connected, thereby connecting the second radiating plates 22 of the multiple metasurface units 10.

[0089] The two-dimensional electron gas layers 103 of the first phase-shifting switches 31 of each row of multiple metasurface units 10 are connected, or electrically connected through the first control electrode 41 and the second control electrode 42 of each metasurface unit 10, ultimately equivalent to the first control lines 51 of each row of multiple metasurface units 10 being connected. The two-dimensional electron gas layers 103 of the second phase-shifting switches 32 of each row of metasurface units 10 are connected, or electrically connected through the third control electrode 43 and the fourth control electrode 44 of each metasurface unit 10, ultimately equivalent to the second control lines 52 of each row of multiple metasurface units 10 being connected.

[0090] Based on this, the wiring on the integrated intelligent metasurface 1 is simpler, the control is more convenient, physical space is saved, and more complex designs are possible.

[0091] The integrated smart metasurfaces in the various embodiments provided in this application are simple in structure, small in size, low in cost, and have low requirements for process precision. They can be mass-produced and can all be deployed at the base station end to reduce insertion loss, increase beam gain within the scanning range, and enhance the signal. The scanning range of the integrated smart metasurface includes any reflection direction on the plane in which the integrated smart metasurface is located.

[0092] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An integrated intelligent metasurface, characterized in that, It includes multiple metasurface units, each metasurface unit including a substrate, a ground plane disposed on one side of the substrate, and a first radiating plate, a second radiating plate, a third radiating plate, two phase switching switches, a first control electrode, a second control electrode, a third control electrode, and a fourth control electrode disposed on the side of the substrate away from the ground plane. The phase-modulation switch includes a two-dimensional electron gas layer and two functional electrodes stacked sequentially on the substrate. In the two phase-modulation switches, the two functional electrodes of one phase-modulation switch are electrically connected to the first radiating sheet and the second radiating sheet, respectively, and the two functional electrodes of the other phase-modulation switch are electrically connected to the second radiating sheet and the third radiating sheet, respectively. In the two phase-shifting switches, the two-dimensional electron gas layer of one phase-shifting switch forms an ohmic contact connection with the first control electrode and the second control electrode, respectively, and the two-dimensional electron gas layer of the other phase-shifting switch forms an ohmic contact connection with the third control electrode and the fourth control electrode, respectively.

2. The integrated intelligent metasurface according to claim 1, characterized in that, The two phase-shifting switches include a first phase-shifting switch and a second phase-shifting switch. The two-dimensional electron gas layer of the first phase-shifting switch includes a first control line and a first active region, and the two-dimensional electron gas layer of the second phase-shifting switch includes a second control line and a second active region. The orthographic projection of the first active region on the substrate overlaps with the orthographic projections of the two functional electrodes of the first phase-modulating switch on the substrate, and the first control line forms an ohmic contact connection with the first control electrode and the second control electrode respectively. The orthographic projection of the second active region on the substrate overlaps with the orthographic projections of the two functional electrodes of the second phase-shifting switch on the substrate, and the second control line forms an ohmic contact connection with the third control electrode and the fourth control electrode, respectively.

3. The integrated intelligent metasurface according to claim 1, characterized in that, The phase-shifting switch also includes two conductive bridges; The two phase-shifting switches include a first phase-shifting switch and a second phase-shifting switch. One functional electrode of the first phase-shifting switch is connected to the first radiating plate in sequence through a conductive bridge, and the other functional electrode of the first phase-shifting switch is connected to the second radiating plate in sequence through another conductive bridge. One functional electrode of the second phase-shifting switch is connected to the second radiating plate in sequence via a conductive bridge, and the other functional electrode of the second phase-shifting switch is connected to the third radiating plate in sequence via another conductive bridge.

4. The integrated intelligent metasurface according to claim 1, characterized in that, The metasurface unit further includes a third control line, a fourth control line, and a fifth control line disposed on the side of the substrate away from the ground plane; The third control line is electrically connected to the first radiating sheet, the fourth control line is electrically connected to the third radiating sheet, and the fifth control line is electrically connected to the second radiating sheet.

5. The integrated intelligent metasurface according to claim 1, characterized in that, The first radiating plate, the second radiating plate, and the third radiating plate are arranged along a first direction parallel to the substrate; The first control electrode and the second control electrode are arranged along a second direction parallel to the substrate, and the third control electrode and the fourth control electrode are arranged along the second direction; The first direction intersects with the second direction.

6. The integrated smart metasurface according to claim 1, characterized in that, The shapes of the first radiating sheet, the second radiating sheet, and the third radiating sheet include one of rectangle, square, or n-sided polygon, where n ≥ 5.

7. The integrated intelligent metasurface according to claim 1, characterized in that, The two-dimensional electron gas layer includes an active layer on the side closer to the substrate, and a barrier layer on the side farther from the substrate. The active layer is made of materials from the IIIA-VA group, and the barrier layer is made of materials from the IIIA-VA group.

8. The integrated intelligent metasurface according to claim 7, characterized in that, The active layer is made of GaN, and the barrier layer is made of AlGaN.

9. The integrated intelligent metasurface according to claim 1, characterized in that, The multiple metasurface units are arranged in an array, including multiple rows and multiple columns; Each metasurface unit contains two phase-modulation switches, including a first phase-modulation switch and a second phase-modulation switch. The two-dimensional electron gas layers of the first phase-modulation switches in each row of metasurface units are connected, and the two-dimensional electron gas layers of the second phase-modulation switches in each row of metasurface units are connected; and / or, The first radiating plates of each row of metasurface units are connected, the second radiating plates of each row of metasurface units are connected, and the third radiating plates of each row of metasurface units are connected.

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