C-band silicon-based heterogeneous integrated light emitting device and preparation method thereof

Abstract

The invention relates to a C-band silicon-based heterogeneous integrated light emitting device and a preparation method thereof, and belongs to the technical field of optical devices. The silicon-based photonic waveguide layer is coupled with the first waveguide layer and the second waveguide layer in a vertical evanescent wave mode, a Si / InP spot-size converter is formed, mode matching is kept, the silicon-based photonic waveguide layer is optically connected with the InP waveguide layer through the Si / InP spot-size converter in a vertical evanescent wave coupling mode, and therefore the functions of light generation, detection, amplification and the like are achieved. According to the invention, the InP waveguide layer is designed into a two-layer waveguide cascade structure, and the structure can more effectively improve the coupling efficiency and reduce end face parasitic reflection.

Description

Technical Field

[0001] The present invention relates to the technical field of optical devices, and in particular to a C-band silicon-based heterogeneous integrated light emitting device and a preparation method thereof. Background Art

[0002] Silicon-based photonic technology is a photonic integration technology based on silicon materials and using existing CMOS processes to manufacture optical devices. Photonic integration technology is considered to be the core technology to break through the two major technical bottlenecks of speed and energy consumption faced by the next generation of information networks. Compared with traditional integrated circuit chips, silicon-based photonic chips based on laser photonic technology have significant advantages such as low cost, low power consumption, and high bandwidth. In addition, silicon photonic chips do not need to pursue the limit of process size reduction. In terms of manufacturing process, they are not as strict as electronic chips. This reduces the dependence on advanced processes and alleviates the bottleneck problem that restricts the development of current chips to a certain extent. With the rapid development of modern information technology, the global data traffic is expected to grow explosively, and at the same time, higher requirements are placed on the transmission rate and processing of data. The development of services such as 5G, AI, lidar, and data centers has brought a series of challenges to the transmission of optical networks at all levels. The bandwidth requirements of data center optical modules have increased from 100G and 200G to the current 800G and 1.6T era. In order to solve the problem of how to reduce energy consumption and loss while increasing the transmission rate, the industry has paid more attention to photonic integration technology.

[0003] At present, there are problems such as lattice mismatch and thermal expansion coefficient mismatch between silicon and InP and lithium niobate materials in the silicon-based photonic platform, and there is a refractive index mismatch between silicon and InP and lithium niobate materials. Summary of the invention

[0004] The object of the present invention is to overcome the deficiencies of the prior art and provide a C-band silicon-based heterogeneous integrated light emitting device and a preparation method thereof.

[0005] To achieve the above object, the technical solution adopted by the present invention is:

[0006] In a first aspect, the present invention provides a C-band silicon-based heterogeneous integrated light emitting device, comprising a silicon-based photonic waveguide layer, an InP waveguide layer, a lithium niobate waveguide layer and a first insulating layer, wherein the first insulating layer is wrapped around the side surface and the upper surface of the silicon-based photonic waveguide layer, the InP waveguide layer and the lithium niobate waveguide layer are arranged on the first insulating layer, the InP waveguide layer comprises a first waveguide layer and a second waveguide layer arranged in sequence from bottom to top, the silicon-based photonic waveguide layer is optically interconnected with the first waveguide layer in a vertical evanescent wave coupling manner, the silicon-based photonic waveguide layer is optically interconnected with the second waveguide layer in a vertical evanescent wave coupling manner, and the silicon-based photonic waveguide layer is optically interconnected with the lithium niobate waveguide layer in a vertical evanescent wave coupling manner.

[0007] Preferably, the first waveguide layer includes a first straight waveguide and a first tapered waveguide disposed on both sides of the first straight waveguide; the second waveguide layer includes a second straight waveguide and a second tapered waveguide disposed on both sides of the second straight waveguide;

[0008] The lithium niobate waveguide layer is provided with a lithium niobate straight waveguide and two lithium niobate tapered waveguides, and the two lithium niobate tapered waveguides are respectively arranged on both sides of the lithium niobate straight waveguide.

[0009] Further preferably, the silicon-based photonic waveguide layer includes four silicon-based tapered waveguides arranged in sequence, and the tail end of each silicon-based tapered waveguide is connected to a silicon-based straight waveguide, wherein the first two silicon-based tapered waveguides overlap with the first straight waveguide and the second straight waveguide respectively in the optical signal transmission direction, and the silicon-based straight waveguide connected to the first two silicon-based tapered waveguides overlaps with the first tapered waveguide and the second tapered waveguide respectively in the optical signal transmission direction; the last two silicon-based tapered waveguides overlap with the two lithium niobate tapered waveguides in a one-to-one correspondence in the optical signal transmission direction.

[0010] Preferably, the thickness of the silicon-based photonic waveguide layer is not greater than 400 nm.

[0011] Preferably, the first waveguide layer is an n-InP layer.

[0012] Preferably, the second waveguide layer is composed of a quantum well layer, a p-InP layer and a p-Contact layer which are arranged in sequence from bottom to top.

[0013] Further preferably, an N metal layer and a cladding layer are arranged on the first waveguide layer, the side surfaces of the first waveguide layer, quantum well layer, p-InP layer and p-Contact layer are wrapped with the cladding layer, and a P metal layer is arranged on the p-Contact layer.

[0014] Preferably, a metal contact layer is disposed above the lithium niobate waveguide layer, and a cladding layer is disposed between the lithium niobate waveguide layer and the metal contact layer.

[0015] In a second aspect, the present invention provides a method for preparing a C-band silicon-based heterogeneous integrated light emitting device as described in the first aspect, comprising the following steps:

[0016] S1. preparing a silicon-based photonic waveguide layer including a silicon-based straight waveguide, a silicon-based tapered waveguide, and a silicon-based grating passive optical device on a substrate layer;

[0017] S2, preparing a first insulating layer on the upper surface of the silicon-based photonic waveguide layer;

[0018] S3, transferring the InP epitaxial layer with the substrate and the lithium niobate thin film device layer with the substrate onto the first insulating layer with the substrate facing upward, removing the substrate by substrate thinning and wet etching, and preparing cladding layers on the InP epitaxial layer and the lithium niobate thin film device layer respectively;

[0019] S4, preparing an InP waveguide layer, a lithium niobate waveguide layer, a P metal layer, an N metal layer and a metal contact layer.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] The present invention forms a Si / InP spot converter and maintains mode matching by vertical evanescent wave coupling of a silicon-based photonic waveguide layer with a first waveguide layer and a second waveguide layer, respectively. The silicon-based photonic waveguide layer is optically interconnected with the InP waveguide layer by vertical evanescent wave coupling through the Si / InP spot converter, thereby realizing functions such as light generation, detection, and amplification. The present invention designs the InP waveguide layer into a two-layer waveguide cascade structure, which can more effectively improve coupling efficiency and reduce end face parasitic reflection. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic plan view of a C-band silicon-based heterogeneous integrated light emitting device provided by the present invention;

[0023] Figure 2 A cross-sectional view of the region where the InP waveguide layer provided by the present invention is located;

[0024] Figure 3 This is a cross-sectional view of the area where the lithium niobate waveguide layer provided by the present invention is located.

[0025] In the figure, 1-silicon-based photonic waveguide layer, 11-silicon-based straight waveguide, 12-silicon-based tapered waveguide, 2-InP waveguide layer, 21-first waveguide layer, 211-first straight waveguide, 212-second tapered waveguide, 22-second waveguide layer, 221-second straight waveguide, 222-second tapered waveguide, 223-quantum well layer, 224-p-InP layer, 225-p-Contact layer, 3-lithium niobate waveguide layer, 31-lithium niobate straight waveguide, 32-lithium niobate tapered waveguide, 4-first insulating layer, 5-base layer, 51-substrate layer, 52-second insulating layer, 6-cladding layer, 7-P metal layer, 8-N metal layer, 9-metal contact layer. DETAILED DESCRIPTION

[0026] In order to better illustrate the purpose, technical solutions and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments.

[0027] See also Figures 1 to 3 In a first aspect, the present invention provides a C-band silicon-based heterogeneous integrated light emitting device, comprising a silicon-based photonic waveguide layer 1, an InP waveguide layer 2, a lithium niobate waveguide layer 3 and a first insulating layer 4, wherein the first insulating layer 4 is wrapped around the side surface and the upper surface of the silicon-based photonic waveguide layer 1, the InP waveguide layer 2 and the lithium niobate waveguide layer 3 are arranged on the first insulating layer 4, the InP waveguide layer 2 comprises a first waveguide layer 21 and a second waveguide layer 22 arranged in sequence from bottom to top, the silicon-based photonic waveguide layer 1 and the first waveguide layer 21 are optically interconnected in a vertical evanescent wave coupling manner, the silicon-based photonic waveguide layer 1 and the second waveguide layer 22 are optically interconnected in a vertical evanescent wave coupling manner, and the silicon-based photonic waveguide layer 1 and the lithium niobate waveguide layer 3 are optically interconnected in a vertical evanescent wave coupling manner.

[0028] It should be noted that, in the present invention, the width refers to Figure 1 The length in the W direction refers to Figure 1 Dimension in the L direction.

[0029] In one embodiment, the first waveguide layer 21 includes a first straight waveguide 211 and a first tapered waveguide 212 disposed on both sides of the first straight waveguide 211; the second waveguide layer 22 includes a second straight waveguide 221 and a second tapered waveguide 222 disposed on both sides of the second straight waveguide 221;

[0030] The lithium niobate waveguide layer 3 is provided with a lithium niobate straight waveguide 31 and two lithium niobate tapered waveguides 32, and the two lithium niobate tapered waveguides 32 are respectively arranged on both sides of the lithium niobate straight waveguide 31;

[0031] The silicon-based photonic waveguide layer 1 includes four silicon-based tapered waveguides 12 arranged in sequence, and the tail end of each silicon-based tapered waveguide 12 is connected to a silicon-based straight waveguide 11, wherein the first straight waveguide 211 and the second straight waveguide 221 overlap the first two silicon-based tapered waveguides 12 in the optical signal transmission direction, and the silicon-based straight waveguide 11 connected to the first two silicon-based tapered waveguides 12 overlaps the first tapered waveguide 212 and the second tapered waveguide 222 in the optical signal transmission direction respectively; the last two silicon-based tapered waveguides 12 overlap with the two lithium niobate tapered waveguides 32 in the optical signal transmission direction in a one-to-one correspondence.

[0032] In the present invention, the silicon-based straight waveguide 11 is vertically evanescently coupled with the first waveguide layer 21 and the second waveguide layer 22 to form a Si / InP spot converter and maintain mode matching. The silicon-based photonic waveguide layer 1 is optically interconnected with the InP waveguide layer 2 by vertical evanescent wave coupling through the Si / InP spot converter, thereby realizing functions such as light generation, detection, and amplification. The present invention designs the InP waveguide layer 2 into a two-layer waveguide cascade structure, which can be efficiently coupled with the thinner silicon-based photonic waveguide layer 1 and reduce end face parasitic reflections.

[0033] In the present invention, the corresponding silicon-based tapered waveguide 12 is vertically evanescently coupled with the lithium niobate tapered waveguide 32 to form a Si / LN spot mode converter and maintain mode matching. The silicon-based photonic waveguide layer 1 is optically interconnected with the lithium niobate waveguide layer 3 through the Si / LN spot mode converter in a vertical evanescent wave coupling manner, thereby realizing a high-speed linear optical modulation function.

[0034] The working wavelength of the light emitting device of the present invention can cover the C band.

[0035] Specifically, the width of the silicon-based straight waveguide 11 is 500-5000 nm.

[0036] Specifically, the width of the first straight waveguide 211 is 2000-7000nm; the width of the first tapered waveguide 212 increases linearly from the tip to the tail, the tip width of the first tapered waveguide 212 is 100-500nm, the tail end of the first tapered waveguide 212 is connected to the first straight waveguide 211, and the tail end width of the first tapered waveguide 212 is equal to the width of the first straight waveguide 211.

[0037] Specifically, the width of the second straight waveguide 221 is 2000-7000nm; the width of the second tapered waveguide 222 increases linearly from the tip to the tail, the tip width of the second tapered waveguide 222 is 100-500nm, the tail end of the second tapered waveguide 222 is connected to the second straight waveguide 221, and the tail end width of the second tapered waveguide 222 is equal to the width of the second straight waveguide 221.

[0038] Specifically, the length of the overlapping area between the first straight waveguide 211 and the corresponding silicon-based tapered waveguide 12 in the optical signal transmission direction is 10 to 50,000 μm (preferably 50 to 500 μm), and the length of the overlapping area between the second straight waveguide 221 and the corresponding silicon-based tapered waveguide 12 in the optical signal transmission direction is 10 to 50,000 μm (preferably 50 to 500 μm).

[0039] The length of the overlapping area (i.e., coupling area) between the first tapered waveguide 212 and the corresponding silicon-based straight waveguide 11 in the optical signal transmission direction is 10 to 50,000 μm (preferably 50 to 500 μm); the length of the overlapping area (i.e., coupling area) between the second tapered waveguide 222 and the corresponding silicon-based straight waveguide 11 in the optical signal transmission direction is 10 to 50,000 μm (preferably 20 to 200 μm).

[0040] The length of the overlapping region (ie, coupling region) of the lithium niobate tapered waveguide 32 and the corresponding silicon-based tapered waveguide 12 in the optical signal transmission direction is 10 to 50,000 μm (preferably 20 to 100 μm).

[0041] The inventors have found through research that when the length of each overlapping region is controlled within the above preferred range, the coupling efficiency between the InP waveguide layer 2 and the lithium niobate waveguide layer 3 and the silicon-based photonic waveguide layer 1 is higher.

[0042] Specifically, the first waveguide layer 21 is an n-InP layer. The second waveguide layer 22 is composed of a quantum well layer 223, a p-InP layer 224 and a p-Contact layer 225 which are sequentially arranged from bottom to top.

[0043] An N metal layer 8 and a cladding layer 6 are disposed on the first waveguide layer 21 . The side surfaces of the first waveguide layer 21 , the quantum well layer 223 , the p-InP layer 224 and the p-Contact layer 225 are wrapped with the cladding layer 6 . A P metal layer is disposed on the p-Contact layer 225 .

[0044] A metal contact layer 9 is disposed above the lithium niobate waveguide layer 3 , and a cladding layer 6 is disposed between the lithium niobate waveguide layer 3 and the metal contact layer 9 .

[0045] The material of the cladding layer 6 can be silicon dioxide or benzocyclobutene, and the thickness of the cladding layer 6 is 1 to 3 μm.

[0046] Specifically, the width of the lithium niobate straight waveguide 31 is 500-5000 nm.

[0047] Specifically, the width of the silicon-based tapered waveguide 12 increases linearly from the tip to the tail end thereof, and the width of the silicon-based tapered waveguide 12 is 100-300 nm. The tail end of the silicon-based tapered waveguide 12 is connected to the silicon-based straight waveguide 11, and the width of the tail end of the silicon-based tapered waveguide 12 is equal to the width of the silicon-based straight waveguide 11; the width of the lithium niobate tapered waveguide 32 increases linearly from the tip to the tail end thereof, and the width of the lithium niobate tapered waveguide 32 is 100-500 nm. The tail end of the lithium niobate tapered waveguide 32 is connected to the lithium niobate straight waveguide 31, and the width of the tail end of the lithium niobate tapered waveguide 32 is equal to the width of the lithium niobate straight waveguide 31. The tip of the lithium niobate tapered waveguide 32 is in the opposite direction to the tip of the corresponding overlapping silicon-based tapered waveguide 12.

[0048] Specifically, the thickness of the first waveguide layer 21 is 50 to 300 nm, the thickness of the quantum well layer 223 is 100 to 500 nm, the thickness of the p-InP layer 224 is 1500 to 2000 nm, the thickness of the p-Contact layer 225 is 50 to 300 nm, the thickness of the silicon-based photonic waveguide layer 1 is not more than 400 nm, the thickness of the silicon-based straight waveguide 11 is 220 to 400 nm, the thickness of the silicon-based tapered waveguide 12 is 220 to 400 nm, the total thickness of the lithium niobate waveguide layer 3 is 360 to 600 nm, the thickness of the lithium niobate straight waveguide 31 is 180 to 300 nm, and the thickness of the lithium niobate tapered waveguide 32 is 180 to 300 nm.

[0049] In the present invention, the thickness of the silicon-based straight waveguide 11 and the silicon-based tapered waveguide 12 can be independently selected from 220nm, 250nm, 300nm, 350nm or a range consisting of two groups of values ​​therein. The present invention designs the InP waveguide layer 2 into a two-layer waveguide cascade structure consisting of a first waveguide layer 21 and a second waveguide layer 22. This structure can be efficiently coupled with the silicon-based photonic waveguide layer 1 having a thickness of less than 400nm, thereby reducing end face parasitic reflections.

[0050] In one embodiment, the first insulating layer 4 is made of silicon oxide.

[0051] In one embodiment, the C-band silicon-based heterogeneous integrated light emitting device further includes a base layer 5, the base layer 5 includes a second insulating layer 51 and a substrate layer 52, and the silicon-based photonic waveguide layer 1, the second insulating layer 51 and the substrate layer 52 are arranged in sequence from top to bottom.

[0052] Specifically, the material of the second insulating layer 51 may be silicon dioxide.

[0053] Specifically, the material of the substrate layer 52 may be silicon.

[0054] In a second aspect, the present invention provides a method for preparing a C-band silicon-based heterogeneous integrated light emitting device as described in the first aspect, comprising the following steps:

[0055] S1, preparing a silicon-based photonic waveguide layer 1 having a silicon-based straight waveguide 11, a silicon-based tapered waveguide 12, and a silicon-based grating passive optical device (not shown in the figure) structure on a substrate layer 5;

[0056] S2, preparing a first insulating layer 4 on the base layer 5 and the silicon-based photonic waveguide layer 1;

[0057] S3, transferring the InP epitaxial layer with the substrate and the lithium niobate thin film device layer with the substrate to the side of the first insulating layer 4 away from the silicon-based photonic waveguide layer 1 with the substrate facing upward, removing the substrate by substrate thinning and wet etching, and preparing cladding layers on the InP epitaxial layer and the lithium niobate thin film device layer respectively;

[0058] S4, preparing an InP waveguide layer 2, a lithium niobate waveguide layer 3, a P metal layer 7, an N metal layer 8 and a metal contact layer 9.

[0059] Step S4 includes:

[0060] A. A window is opened in the cladding layer on the lithium niobate thin film device layer to expose the lithium niobate thin film device layer, and the exposed lithium niobate thin film device layer is processed to form a lithium niobate waveguide layer 3, and a silicon oxide cladding layer is deposited on the upper surface of the lithium niobate waveguide layer 3 by thin film deposition technology, and a metal contact layer 9 is prepared on the corresponding area of ​​the silicon oxide cladding layer by evaporating metal and lift-off process;

[0061] B. A window is opened in the cladding layer on the InP epitaxial layer to expose the InP epitaxial layer, and the exposed InP epitaxial layer is processed to form an InP waveguide layer 2. A P metal layer 7 and an N metal layer 8 are prepared on the InP waveguide layer 2 by metal evaporation and lift-off process.

[0062] In step S4, step A may be performed first, and a silicon oxide cladding layer may be deposited on the metal contact layer 9 by using a thin film deposition technique, and then step B may be performed, and then a window may be opened in the cladding layer on the metal contact layer 9 to expose the metal contact layer 9;

[0063] In step S4, step B may be implemented first, and a silicon oxide cladding layer may be deposited on the P metal layer 7 and the N metal layer 8 using thin film deposition technology, followed by step A, and then windows may be opened in the cladding layer on the P metal layer 7 and the N metal layer 8 to expose the P metal layer 7 and the N metal layer 8.

[0064] In one embodiment, step S2 includes: depositing a silicon dioxide film on the base layer 5 and the silicon-based photonic waveguide layer 1 by a thin film deposition method, and then polishing the formed silicon dioxide film to be flat by a chemical mechanical polishing technique to form a first insulating layer 4.

[0065] In one embodiment, in step S3, the cladding is prepared by a thin film deposition method or a spin coating method. For example, the cladding is made of silicon dioxide, and silicon dioxide is deposited on the outer surface of the InP waveguide layer 2 and the lithium niobate waveguide layer 3 by a thin film deposition method to form the cladding; for another example, the cladding is made of benzocyclobutene, and benzocyclobutene is spin-coated on the outer surface of the InP waveguide layer 2 and the lithium niobate waveguide layer 3 by a spin coating method, and the cladding is formed after curing.

[0066] In one embodiment, before step S1 , the method further includes: preparing a second insulating layer 51 on the upper surface of the substrate layer 52 , and preparing a silicon-based photonic waveguide layer 1 on the upper surface of the second insulating layer 51 .

[0067] In the description of the present invention, it should be noted that the terms "first", "second" and "third" are only used for descriptive purposes and cannot be understood as indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" and "third" may explicitly or implicitly include at least one of the features. All directional indicators (such as up and down) in the present invention are only used to explain the relative position relationship, movement status, etc. between the various parts under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0068] In the description of the present invention, it should also be noted that the terms "include", "have" and any variations thereof are intended to cover non-exclusive inclusions.

[0069] For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0070] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A C-band silicon-based heterogeneous integrated light emitting device, characterized in that: The invention comprises a silicon-based photon waveguide layer, an InP waveguide layer, a lithium niobate waveguide layer and a first insulating layer, wherein the first insulating layer is wrapped around the side surface and the upper surface of the silicon-based photon waveguide layer, the InP waveguide layer and the lithium niobate waveguide layer are arranged on the first insulating layer, the InP waveguide layer comprises a first waveguide layer and a second waveguide layer arranged in sequence from bottom to top, the silicon-based photon waveguide layer and the first waveguide layer are optically interconnected in a vertical evanescent wave coupling manner, the silicon-based photon waveguide layer and the second waveguide layer are optically interconnected in a vertical evanescent wave coupling manner, and the silicon-based photon waveguide layer and the lithium niobate waveguide layer are optically interconnected in a vertical evanescent wave coupling manner.

2. The C-band silicon-based heterogeneous integrated light emitting device according to claim 1, characterized in that: The first waveguide layer includes a first straight waveguide and a first tapered waveguide disposed on both sides of the first straight waveguide; the second waveguide layer includes a second straight waveguide and a second tapered waveguide disposed on both sides of the second straight waveguide; The lithium niobate waveguide layer is provided with a lithium niobate straight waveguide and two lithium niobate tapered waveguides, and the two lithium niobate tapered waveguides are respectively arranged on both sides of the lithium niobate straight waveguide.

3. The C-band silicon-based heterogeneous integrated light emitting device as claimed in claim 2, characterized in that: The silicon-based photonic waveguide layer includes four silicon-based tapered waveguides arranged in sequence, and the tail end of each silicon-based tapered waveguide is connected to a silicon-based straight waveguide, wherein the first two silicon-based tapered waveguides overlap with the first straight waveguide and the second straight waveguide in the direction of optical signal transmission, and the silicon-based straight waveguide connected to the first two silicon-based tapered waveguides overlaps with the first tapered waveguide and the second tapered waveguide in the direction of optical signal transmission respectively; the last two silicon-based tapered waveguides overlap with the two lithium niobate tapered waveguides in a one-to-one correspondence in the direction of optical signal transmission.

4. The C-band silicon-based heterogeneous integrated light emitting device according to claim 1, characterized in that: The thickness of the silicon-based photon waveguide layer is no more than 400 nm.

5. The C-band silicon-based heterogeneous integrated light emitting device according to claim 1, characterized in that: The first waveguide layer is an n-InP layer.

6. The C-band silicon-based heterogeneous integrated light emitting device according to claim 1, characterized in that: The second waveguide layer is composed of a quantum well layer, a p-InP layer and a p-Contact layer which are arranged in sequence from bottom to top.

7. The C-band silicon-based heterogeneous integrated light emitting device as claimed in claim 6, characterized in that: An N metal layer and a cladding layer are arranged on the first waveguide layer, side surfaces of the first waveguide layer, quantum well layer, p-InP layer and p-Contact layer are wrapped with the cladding layer, and a P metal layer is arranged on the p-Contact layer.

8. The C-band silicon-based heterogeneous integrated light emitting device as claimed in claim 1, characterized in that: A metal contact layer is arranged above the lithium niobate waveguide layer.

9. The C-band silicon-based heterogeneous integrated light emitting device as claimed in claim 8, characterized in that: A cladding layer is arranged between the lithium niobate waveguide layer and the metal contact layer.

10. A method for preparing a C-band silicon-based heterogeneous integrated light emitting device as claimed in any one of claims 1 to 9, characterized in that: The steps include: S1. preparing a silicon-based photonic waveguide layer including a silicon-based straight waveguide, a silicon-based tapered waveguide, and a silicon-based grating passive optical device on a substrate layer; S2, preparing a first insulating layer on the upper surface of the silicon-based photonic waveguide layer; S3, transferring the InP epitaxial layer with the substrate and the lithium niobate thin film device layer with the substrate onto the first insulating layer with the substrate facing upward, removing the substrate by substrate thinning and wet etching, and preparing cladding layers on the InP epitaxial layer and the lithium niobate thin film device layer respectively; S4, preparing an InP waveguide layer, a lithium niobate waveguide layer, a P metal layer, an N metal layer and a metal contact layer.

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