A silicon-based heterogeneous integrated optical emitting device in the O-band and its fabrication method

Abstract

This invention relates to an O-band silicon-based heterogeneous integrated optical emitting device and its fabrication method, belonging to the field of optical device technology. This invention integrates InP and lithium niobate materials on a silicon-based photonics platform via wafer bonding. Active and passive device alignment is achieved through photolithography, eliminating the need to consider alignment issues. Furthermore, wafer bonding allows for mass production, reducing the cost per device and offering advantages such as high integration, cost savings, and ease of mass production. This invention overcomes the defects of lattice mismatch and thermal expansion coefficient mismatch between silicon and InP and lithium niobate materials on the silicon-based photonics platform through BCB polymer-assisted bonding technology or low-temperature direct bonding technology, thereby achieving the integration of different functional materials on the silicon-based photonics platform. This invention achieves mode matching between waveguides of different materials by designing corresponding mode-spot converter structures.

Description

Technical Field

[0001] This invention relates to the field of optical device technology, and in particular to an O-band silicon-based heterogeneous integrated light emitting device and its fabrication method. Background Technology

[0002] Despite the immense potential of silicon-based photonics technology, it also faces several challenges. Silicon is an indirect bandgap semiconductor with low direct light-emitting efficiency, necessitating hybrid integration techniques to address issues such as on-chip light sources and optical amplification. Furthermore, with increasing bandwidth demands, lithium niobate (LN) materials are attracting growing attention due to their high electro-optic effect. Leveraging the low loss and high electro-optic coefficient of LN, high-speed electro-optic modulators based on thin-film lithium niobate (LN) have achieved ultra-high bandwidth 8-channel LN chips supporting single-wavelength 400G (3.2T DR8) applications at >110GHz. Integrating different materials onto a single platform through wafer bonding to achieve systematic, multifunctional photonic integrated chips has become a consensus.

[0003] Currently, the main methods for integrating other materials onto silicon substrates include micro-transfer printing and flip-chip technology. Micro-transfer printing requires high-precision transfer equipment. Even so, the alignment between active and passive devices remains a challenge. Flip-chip technology, requiring active alignment for each channel, is unsuitable for mass production. Furthermore, current silicon-based photonics platforms suffer from lattice mismatch and thermal expansion coefficient mismatch between silicon and InP and lithium niobate materials, as well as refractive index mismatch. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide an O-band silicon-based heterogeneous integrated light emitting device and its fabrication method.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] In a first aspect, the present invention provides an O-band silicon-based heterogeneous integrated optical emitting device, characterized in that it comprises a silicon-based photonic waveguide layer, an InP waveguide layer, a lithium niobate waveguide layer, and a first insulating layer, wherein the first insulating layer is disposed on the upper surface of the silicon-based photonic waveguide layer, the InP waveguide layer and the lithium niobate waveguide layer are disposed on the upper surface of the first insulating layer, the silicon-based photonic waveguide layer and the InP waveguide layer are optically interconnected by vertical evanescent wave coupling, and the silicon-based photonic waveguide layer and the lithium niobate waveguide layer are optically interconnected by vertical evanescent wave coupling.

[0007] Preferably, a silicon-based straight waveguide is disposed on the silicon-based photonic waveguide layer, and the InP waveguide layer is disposed on the InP straight waveguide and two InP tapered waveguides. The two InP tapered waveguides are respectively disposed on both sides of the straight waveguide, and the silicon-based straight waveguide overlaps with the InP straight waveguide and the two InP tapered waveguides in the optical signal transmission direction.

[0008] More preferably, the width of the silicon-based straight waveguide is 500–5000 nm; the width of the InP straight waveguide is 2000–7000 nm; the width of the InP tapered waveguide increases linearly from its tip to its tail, the tail of the InP tapered waveguide is connected to the InP straight waveguide, the width of the tail of the InP tapered waveguide is equal to the width of the InP straight waveguide, and the width of the tip of the InP tapered waveguide is 100–500 nm.

[0009] More preferably, the length of the overlapping region between the silicon-based straight waveguide and the InP tapered waveguide in the optical signal transmission direction is 10 to 50,000 μm.

[0010] More preferably, the InP straight waveguide and the two InP tapered waveguides are each composed of a quantum well layer, a p-InP layer and a p-Contact layer arranged sequentially from bottom to top.

[0011] More preferably, the silicon-based photonic waveguide layer is further provided with two silicon-based tapered waveguides, and the lithium niobate waveguide layer is provided with a lithium niobate straight waveguide and two lithium niobate tapered waveguides located on both sides of the lithium niobate straight waveguide. The silicon-based tapered waveguide and the lithium niobate tapered waveguide overlap one-to-one in the optical signal transmission direction.

[0012] More preferably, the width of the silicon-based straight waveguide is 500–5000 nm; the width of the lithium niobate straight waveguide is 500–5000 nm; the width of the silicon-based tapered waveguide increases linearly from its tip to its tail, the tip width of the silicon-based tapered waveguide is 100–300 nm, the tail end of the silicon-based tapered waveguide is connected to the silicon-based straight waveguide, and the tail end width of the silicon-based tapered waveguide is equal to the width of the silicon-based straight waveguide; the width of the lithium niobate tapered waveguide increases linearly from its tip to its tail, the tip width of the lithium niobate tapered waveguide is 100–500 nm, the tail end of the lithium niobate tapered waveguide is connected to the lithium niobate straight waveguide, and the tail end width of the lithium niobate tapered waveguide is equal to the width of the lithium niobate straight waveguide.

[0013] More preferably, the length of the overlapping region between the silicon-based tapered waveguide and the lithium niobate tapered waveguide in the optical signal transmission direction is 10 to 50,000 μm.

[0014] Preferably, the first insulating layer is a silicon dioxide layer, or a silicon dioxide layer and a BCB layer arranged sequentially from bottom to top.

[0015] Preferably, a substrate layer is disposed below the silicon-based photonic waveguide layer, and the substrate layer includes a BOX layer and a substrate layer disposed sequentially from top to bottom.

[0016] Secondly, the present invention provides a method for fabricating an O-band silicon-based heterogeneous integrated optical emitting device as described in the first aspect, comprising the following steps:

[0017] S1. Silicon-based straight waveguides, silicon-based tapered waveguides, and silicon-based grating passive optical devices are fabricated by processing silicon-based photonic waveguide layers.

[0018] S2. Prepare a first insulating layer on the silicon-based photonic waveguide layer processed in step S1;

[0019] S3. The InP epitaxial layer and lithium niobate thin film device layer are transferred to the side of the first insulating layer away from the silicon-based photonic waveguide layer with the substrate facing upward. The substrate is removed by substrate thinning and wet etching. Silicon oxide cladding is deposited on the InP epitaxial layer and lithium niobate thin film device layer respectively.

[0020] S4. Fabricate InP waveguide layer, lithium niobate waveguide layer, P metal layer, N metal layer and metal contact layer.

[0021] Preferably, step S4 includes:

[0022] A. Open a window in the cladding of the lithium niobate thin film device layer to expose the lithium niobate thin film device layer. Process the exposed lithium niobate thin film device layer to form a lithium niobate waveguide layer. Deposit a silicon oxide cladding layer on the upper surface of the lithium niobate waveguide layer using thin film deposition technology. Prepare a metal contact layer on the corresponding area of ​​the silicon oxide cladding layer by metal evaporation and lift-off process.

[0023] B. Open a window in the cladding of the InP epitaxial layer to expose the InP epitaxial layer. Process the exposed InP epitaxial layer to form an InP waveguide layer. Prepare a P metal layer and an N metal layer on the InP waveguide layer by metal evaporation and lift-off processes.

[0024] In step S4, step A can be performed first, using thin film deposition technology to deposit a silicon oxide cladding layer on the metal contact layer, and then step B can be performed, and then a window can be opened in the cladding layer on the metal contact layer to expose the metal contact layer.

[0025] In step S4, step B can be performed first, after which step A is performed after depositing silicon oxide cladding on the P metal layer and N metal layer using thin film deposition technology. Then, windows are opened in the cladding on the P metal layer and N metal layer to expose the P metal layer and N metal layer.

[0026] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0027] This invention achieves mode matching between waveguides made of different materials by designing a corresponding mode-spot converter structure.

[0028] This invention integrates InP and lithium niobate materials on a silicon-based photonic waveguide layer through wafer bonding. The alignment of active and passive devices is achieved through photolithography, eliminating the need to consider alignment issues. Furthermore, it can be mass-produced through wafer bonding, reducing the cost of individual devices and offering advantages such as high integration, cost savings, and ease of mass production.

[0029] This invention overcomes the defects of lattice mismatch and thermal expansion coefficient mismatch between silicon and InP and lithium niobate materials in silicon-based photonics platforms by using BCB polymer-assisted bonding technology or direct bonding technology, thereby realizing the integration of different functional materials on silicon-based photonics platforms. Attached Figure Description

[0030] Figure 1 A planar schematic diagram of the O-band silicon-based heterogeneous integrated optical emitting device provided by the present invention;

[0031] Figure 2 A schematic diagram of the layered structure of an optical emitting device provided in one embodiment, in the region where an InP waveguide layer is disposed;

[0032] Figure 3 A schematic diagram of the layered structure of an optical emitting device provided in another embodiment in the region where an InP waveguide layer is provided;

[0033] Figure 4 A schematic diagram of the layered structure of an optical emitting device provided in one embodiment, in the region where a lithium niobate waveguide layer is provided;

[0034] Figure 5 A schematic diagram of the layered structure of an optical emitting device provided in another embodiment in the region where a lithium niobate waveguide layer is provided.

[0035] In the figure, 1-silicon-based photonic waveguide layer, 11-silicon-based straight waveguide, 12-silicon-based tapered waveguide, 2-InP waveguide layer, 21-n-InP layer, 22-InP straight waveguide, 23-InP tapered waveguide, 24-quantum well layer, 25-p-InP layer, 26-p-Contact layer, 3-lithium niobate waveguide layer, 31-lithium niobate straight waveguide, 32-lithium niobate tapered waveguide, 4-first insulating layer, 41-BOX layer, 42-BCB layer, 5-substrate layer, 51-substrate layer, 52-BOX layer, 6-cladding layer, 7-P metal layer, 8-N metal layer, 9-metal contact layer. Detailed Implementation

[0036] To better illustrate the purpose, technical solution, and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments.

[0037] Please see Figures 1-5 In a first aspect, the present invention provides an O-band silicon-based heterogeneous integrated optical emitting device, comprising a silicon-based photonic waveguide layer 1, an InP waveguide layer 2, a lithium niobate waveguide layer 3, and a first insulating layer 4. The first insulating layer 4 is disposed above the silicon-based photonic waveguide layer 1, the InP waveguide layer 2 and the lithium niobate waveguide layer 3 are disposed above the first insulating layer 4, the silicon-based photonic waveguide layer 1 and the InP waveguide layer 2 are optically interconnected by vertical evanescent wave coupling, and the silicon-based photonic waveguide layer 1 and the lithium niobate waveguide layer 3 are optically interconnected by vertical evanescent wave coupling.

[0038] In one embodiment, a silicon-based straight waveguide 11 is disposed on the silicon-based photonic waveguide layer 1, and the InP waveguide layer 2 includes an n-InP layer 21. An InP straight waveguide 22 and two InP tapered waveguides 23 are disposed on the n-InP layer 21. The two InP tapered waveguides 23 are respectively disposed on both sides of the InP straight waveguide 22. The silicon-based straight waveguide 11 overlaps with the InP straight waveguide 22 and the two InP tapered waveguides 23 in the optical signal transmission direction.

[0039] In this invention, a silicon-based straight waveguide 11 is vertically evanescently coupled to an InP straight waveguide 22 and two InP tapered waveguides 23, forming a Si / InP mode converter while maintaining mode matching. The silicon-based photonic waveguide layer 1 is optically interconnected with the InP waveguide layer 2 via the Si / InP mode converter using vertical evanescent coupling, thereby achieving functions such as light generation, detection, and amplification. The operating wavelength of the optical emitting device described in this invention can cover the O-band.

[0040] Specifically, the width of the silicon-based straight waveguide 11 is 500–5000 nm; the width of the InP straight waveguide 22 is 2000–7000 nm; the width of the InP tapered waveguide 23 increases linearly from its tip to its tail, the tip width of the InP tapered waveguide 23 is 100–500 nm, the tail end of the InP tapered waveguide 23 is connected to the InP straight waveguide 22, and the width of the tail end of the InP tapered waveguide 23 is equal to the width of the InP straight waveguide 23.

[0041] The length L1 of the overlapping region (i.e., coupling region) between the silicon-based straight waveguide 11 and the InP tapered waveguide 23 in the optical signal transmission direction is 10 to 50,000 μm.

[0042] Specifically, the InP straight waveguide 22 and the two InP tapered waveguides 23 are each composed of a quantum well layer 24, a p-InP layer 25 and a p-Contact layer 26 arranged sequentially from bottom to top.

[0043] Specifically, the silicon-based photonic waveguide layer 1 is also provided with two silicon-based tapered waveguides 12, and the lithium niobate waveguide layer 3 is provided with a lithium niobate straight waveguide 31 and lithium niobate tapered waveguides 32 located on both sides of the lithium niobate straight waveguide 31. The silicon-based tapered waveguides 12 and the lithium niobate tapered waveguides 32 overlap one-to-one in the direction of optical signal transmission.

[0044] In this invention, the silicon-based tapered waveguide 12 and the lithium niobate tapered waveguide 32 are vertically evanescently coupled to form a Si / LN mode converter and maintain mode matching. The silicon-based photonic waveguide layer 1 is optically interconnected with the lithium niobate waveguide layer 3 through the Si / LN mode converter in a vertically evanescently coupled manner, thereby realizing the high-speed linear optical modulation function.

[0045] Specifically, the width of the silicon-based tapered waveguide 12 increases linearly from its tip to its tail, with a tip width of 100–300 nm. The tail of the silicon-based tapered waveguide 12 connects to the silicon-based straight waveguide 11, and the tail width of the silicon-based tapered waveguide 12 is the same as that of the silicon-based straight waveguide 11. The width of the lithium niobate straight waveguide 31 is 500–5000 nm. The width of the lithium niobate tapered waveguide 32 also increases linearly from its tip to its tail, with a tip width of 100–500 nm. The tail of the lithium niobate tapered waveguide 32 connects to the lithium niobate straight waveguide 31, and the tail width of the lithium niobate tapered waveguide 32 is the same as that of the lithium niobate straight waveguide. The tip of the lithium niobate tapered waveguide 32 faces in the opposite direction to the tip of the silicon-based tapered waveguide 12.

[0046] Specifically, the length L2 of the overlapping region (i.e., coupling region) between the silicon-based tapered waveguide 12 and the lithium niobate tapered waveguide 32 in the optical signal transmission direction is 10 to 50,000 μm.

[0047] The inventors discovered through research that when L1 is 50-200 μm and L2 is 50-200 μm, a higher coupling efficiency can be achieved between the InP waveguide layer 2, the lithium niobate waveguide layer 3 and the silicon-based photonic waveguide layer 1.

[0048] Specifically, an N metal layer 8 is disposed on the n-InP layer 21, and a P metal layer 7 is disposed on the p-Contact layer 26.

[0049] Specifically, a cladding layer 6 is disposed on the upper surface of the lithium niobate waveguide layer 3, and a cladding layer 6 is disposed on the upper surface of the n-InP layer 21 except for the N metal layer 8 region. The cladding layer 6 also wraps around the side surfaces of the quantum well layer 24, the p-InP layer 25 and the p-Contact layer 26.

[0050] The material of the cladding layer 6 can be silicon dioxide or benzocyclobutene, and the thickness of the cladding layer 6 is 1 to 3 μm.

[0051] The total thickness H of the silicon-based photonic waveguide layer 1 is not less than 400 nm (preferably 400-800 nm), the thickness h1 of the silicon-based straight waveguide 11 is 220-400 nm, and the thickness h2 of the silicon-based tapered waveguide 12 is 220-400 nm.

[0052] The thickness of the n-InP layer 21 is 50–300 nm, the thickness of the quantum well layer 24 is 100–500 nm, the thickness of the p-InP layer 25 is 1500–2000 nm, the thickness of the p-Contact layer 26 is 50–300 nm, the total thickness of the lithium niobate waveguide layer 3 is 360–600 nm, the thickness of the lithium niobate straight waveguide 31 is 180–300 nm, and the thickness of the lithium niobate tapered waveguide 32 is 180–300 nm.

[0053] In this invention, the total thickness of the silicon-based photonic waveguide layer 1 can be selected from a range of 450 nm, 500 nm, 600 nm, 700 nm, 800 nm, or two of these values. The thicknesses of the silicon-based straight waveguide 11 and the silicon-based tapered waveguide 12 can each be independently selected from a range of 220 nm, 250 nm, 300 nm, 350 nm, or two of these values. The InP waveguide layer 2 can be coupled to the silicon-based photonic waveguide layer 1, which has a thickness greater than 400 nm, with higher coupling efficiency.

[0054] In one embodiment, the first insulating layer 4 may be a silicon dioxide layer 41, or it may be composed of a silicon dioxide layer 41 and a BCB layer 42, wherein the thickness of the silicon dioxide layer 41 is 10-50 nm and the thickness of the BCB layer 42 is 10-50 nm. In this invention, the BCB layer is made of benzocyclobutene.

[0055] In one embodiment, a substrate layer 5 is disposed below the silicon-based photonic waveguide layer 1, the substrate layer 5 comprising a BOX layer 51 and a substrate layer 52 disposed sequentially from top to bottom.

[0056] Specifically, the material of BOX layer 51 can be silicon dioxide.

[0057] Specifically, the substrate 52 can be made of silicon.

[0058] Secondly, the present invention provides a method for fabricating an O-band silicon-based heterogeneous integrated optical emitting device as described in the first aspect, comprising the following steps:

[0059] S1. A silicon-based straight waveguide 11, a silicon-based tapered waveguide 12, and a silicon-based grating passive optical device (not shown in the figure) are fabricated by processing the silicon-based photonic waveguide layer 1.

[0060] S2. Prepare a first insulating layer 4 on the silicon-based photonic waveguide layer 1 after processing in step S1;

[0061] S3. The InP epitaxial layer and the lithium niobate thin film device layer are transferred to the side of the first insulating layer 4 away from the silicon-based photonic waveguide layer 1 with the substrate facing upward. The substrate is removed by substrate thinning and wet etching. Silicon oxide cladding is deposited on the InP epitaxial layer and the lithium niobate thin film device layer respectively.

[0062] S4. Prepare InP waveguide layer 2, lithium niobate waveguide layer 3, P metal layer 7, N metal layer 8 and metal contact layer 9.

[0063] Step S4 includes:

[0064] A. Open a window in the cladding of the lithium niobate thin film device layer to expose the lithium niobate thin film device layer. Process the exposed lithium niobate thin film device layer to form a lithium niobate waveguide layer 3. Deposit a silicon oxide cladding on the upper surface of the lithium niobate waveguide layer 3 using thin film deposition technology. Prepare a metal contact layer 9 on the corresponding area of ​​the silicon oxide cladding by metal evaporation and lift-off process.

[0065] B. Open a window in the cladding of the InP epitaxial layer to expose the InP epitaxial layer. Process the exposed InP epitaxial layer to form InP waveguide layer 2. Prepare P metal layer 7 and N metal layer 8 on InP waveguide layer 2 by metal evaporation and lift-off process.

[0066] In step S4, step A can be performed first, and a silicon oxide cladding layer can be deposited on the metal contact layer 9 using thin film deposition technology. Then step B can be performed, and a window can be opened in the cladding layer on the metal contact layer 9 to expose the metal contact layer 9.

[0067] In step S4, step B can be performed first, after which a silicon oxide cladding layer is deposited on the P metal layer 7 and the N metal layer 8 using thin film deposition technology. Then, a window is opened in the cladding layer on the P metal layer 7 and the N metal layer 8 to expose the P metal layer 7 and the N metal layer 8.

[0068] In one embodiment, step S2 includes: preparing a BOX layer 41 on the upper surface of the silicon-based photonic waveguide layer 1, depositing a silicon dioxide thin film on the upper surface of the silicon-based photonic waveguide layer 1 using a thin film deposition method, and then polishing the formed silicon dioxide thin film flat using a chemical mechanical polishing technique to form the BOX layer 41.

[0069] Specifically, step S2 also includes: spin-coating benzocyclobutene onto the upper surface of BOX layer 41 and curing it to form BCB layer 42.

[0070] This invention integrates InP and lithium niobate materials on a silicon-based photonic waveguide layer through wafer bonding. The alignment of active and passive devices is achieved through photolithography, eliminating the need to consider alignment issues. Furthermore, it can be mass-produced through wafer bonding, reducing the cost of individual devices and offering advantages such as high integration, cost savings, and ease of mass production.

[0071] This invention overcomes the defects of lattice mismatch and thermal expansion coefficient mismatch between silicon and InP and lithium niobate materials in silicon-based photonics platforms by using BCB polymer-assisted bonding technology or direct bonding technology, thereby realizing the integration of different functional materials on silicon-based photonics platforms.

[0072] In one embodiment, in step S3, the cladding layer 6 is prepared by thin film deposition or spin coating. For example, the cladding layer 6 is made of silicon dioxide, which is deposited on the outer surfaces of the InP waveguide layer 2 and the lithium niobate waveguide layer 3 by thin film deposition to form the cladding layer 6; or, the cladding layer 6 is made of benzocyclobutene, which is spin-coated on the outer surfaces of the InP waveguide layer 2 and the lithium niobate waveguide layer 3 by spin coating, and then cured to form the cladding layer 6.

[0073] In one embodiment, before step S1, the method further includes: preparing a BOX layer 51 on the upper surface of the substrate layer 52, and preparing a silicon-based photonic waveguide layer 1 on the upper surface of the BOX layer 51.

[0074] Specifically, the BOX layer 51 can be prepared by thin film deposition.

[0075] In the description of this invention, it should be noted that the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating the number of technical features indicated. Therefore, a feature defined with "first," "second," and "third" may explicitly or implicitly include at least one of those features. All directional indicators (such as "up" and "down") in this invention are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the accompanying drawings). If this specific orientation changes, the directional indicator will also change accordingly.

[0076] In the description of this invention, it should also be noted that the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0077] Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A silicon-based heterogeneous integrated optical emitting device in the O-band, characterized in that, The device includes a silicon-based photonic waveguide layer, an InP waveguide layer, a lithium niobate waveguide layer, and a first insulating layer. The first insulating layer is disposed on the upper surface of the silicon-based photonic waveguide layer. The InP waveguide layer and the lithium niobate waveguide layer are disposed on the upper surface of the first insulating layer. The silicon-based photonic waveguide layer and the InP waveguide layer are optically interconnected by vertical evanescent wave coupling. The silicon-based photonic waveguide layer and the lithium niobate waveguide layer are optically interconnected by vertical evanescent wave coupling. A silicon-based straight waveguide is disposed on the silicon-based photonic waveguide layer, and an InP waveguide layer is disposed on an InP straight waveguide and two InP tapered waveguides. The two InP tapered waveguides are respectively disposed on both sides of the straight waveguide, and the silicon-based straight waveguide overlaps with the InP straight waveguide and the two InP tapered waveguides in the optical signal transmission direction. The width of the silicon-based straight waveguide is 500~5000nm; the width of the InP straight waveguide is 2000~7000nm; the width of the InP tapered waveguide increases linearly from its tip to its tail, the tail of the InP tapered waveguide is connected to the InP straight waveguide, the width of the tail of the InP tapered waveguide is equal to the width of the InP straight waveguide, and the width of the tip of the InP tapered waveguide is 100~500nm.

2. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 1, characterized in that, The length of the overlapping region between the silicon-based straight waveguide and the InP straight waveguide in the optical signal transmission direction is 10~50000μm, and the length of the overlapping region between the silicon-based straight waveguide and the InP tapered waveguide in the optical signal transmission direction is 10~50000μm.

3. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 1, characterized in that, The InP straight waveguide and the two InP tapered waveguides are each composed of a quantum well layer, a p-InP layer and a p-Contact layer arranged sequentially from bottom to top.

4. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 1, characterized in that, The silicon-based photonic waveguide layer is further provided with two silicon-based tapered waveguides. The lithium niobate waveguide layer is provided with a lithium niobate straight waveguide and two lithium niobate tapered waveguides located on both sides of the lithium niobate straight waveguide. The silicon-based tapered waveguide and the lithium niobate tapered waveguide overlap one-to-one in the optical signal transmission direction.

5. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 4, characterized in that, The width of the lithium niobate straight waveguide is 500~5000nm; the width of the silicon-based tapered waveguide increases linearly from its tip to its tail, the tip width of the silicon-based tapered waveguide is 100~300nm, the tail end of the silicon-based tapered waveguide is connected to the silicon-based straight waveguide, and the tail end width of the silicon-based tapered waveguide is equal to the width of the silicon-based straight waveguide; the width of the lithium niobate tapered waveguide increases linearly from its tip to its tail, the tip width of the lithium niobate tapered waveguide is 100~500nm, the tail end of the lithium niobate tapered waveguide is connected to the lithium niobate straight waveguide, and the tail end width of the lithium niobate tapered waveguide is equal to the width of the lithium niobate straight waveguide.

6. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 5, characterized in that, The length of the overlapping region between the silicon-based tapered waveguide and the lithium niobate tapered waveguide in the optical signal transmission direction is 10~50000μm.

7. The O-band silicon-based heterogeneous integrated optical emitting device as described in claim 1, characterized in that, The first insulating layer includes a silicon dioxide layer, or a silicon dioxide layer and a BCB layer arranged sequentially from bottom to top.

8. A method for fabricating an O-band silicon-based heterogeneous integrated optical emitting device as described in any one of claims 1 to 7, characterized in that, Includes the following steps: S1. Silicon-based straight waveguides, silicon-based tapered waveguides, and silicon-based grating passive optical devices are fabricated by processing silicon-based photonic waveguide layers. S2. Prepare a first insulating layer on the silicon-based photonic waveguide layer processed in step S1; S3. The InP epitaxial layer and lithium niobate thin film device layer are transferred to the side of the first insulating layer away from the silicon-based photonic waveguide layer with the substrate facing upward. The substrate is removed by substrate thinning and wet etching. Silicon oxide cladding is deposited on the InP epitaxial layer and lithium niobate thin film device layer respectively. S4. Fabricate InP waveguide layer, lithium niobate waveguide layer, P metal layer, N metal layer and metal contact layer.

9. The method for fabricating the O-band silicon-based heterogeneous integrated optical emitting device as described in claim 8, characterized in that, Step S4 includes: A. Open a window in the cladding of the lithium niobate thin film device layer to expose the lithium niobate thin film device layer. Process the exposed lithium niobate thin film device layer to form a lithium niobate waveguide layer. Deposit a silicon oxide cladding layer on the upper surface of the lithium niobate waveguide layer using thin film deposition technology. Prepare a metal contact layer on the corresponding area of ​​the silicon oxide cladding layer by metal evaporation and lift-off process. B. Open a window in the cladding of the InP epitaxial layer to expose the InP epitaxial layer. Process the exposed InP epitaxial layer to form an InP waveguide layer. Prepare a P metal layer and an N metal layer on the InP waveguide layer by metal evaporation and lift-off process. In step S4, step A is performed first, in which a silicon oxide cladding layer is deposited on the metal contact layer using thin film deposition technology, and then step B is performed, in which a window is opened in the cladding layer on the metal contact layer to expose the metal contact layer; or step B is performed first, in which a silicon oxide cladding layer is deposited on the P metal layer and the N metal layer using thin film deposition technology, and then step A is performed, in which a window is opened in the cladding layer on the P metal layer and the N metal layer to expose the P metal layer and the N metal layer.

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