Power module, motor drive control device and electric equipment

Abstract

The invention provides a power module, a motor drive control device and electric equipment, and belongs to the technical field of power modules. The power module comprises at least one conversion unit; each conversion unit at least comprises an insulating substrate, a plurality of coating layers, a plurality of power devices and at least one thermosensitive element; the coating layers are respectively attached to the surface of the insulating substrate; the power devices are respectively arranged on the coating layers, and the power devices respectively output voltage or input voltage through the coating layers; the thermosensitive element and at least part of the power device are arranged on the same coating, so that heat generated by the power device to be detected is transferred to the thermosensitive element. The accuracy, timeliness and reliability of detecting the temperature of the power device in the power module can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of power modules, and in particular to a power module, a motor drive control device and an electrical device. Background Art

[0002] As the performance requirements for power modules are increasing, many power modules use insulated-gate bipolar transistors (IGBTs) and other corresponding electronic devices as solutions. Since power modules generate a lot of heat when working, and overheating and damage of IGBTs and other devices will cause the failure of the entire power module, it is necessary to monitor the temperature of the IGBT to ensure that the IGBT works stably and efficiently within the safe junction temperature range.

[0003] In the related technology, relevant technicians generally set some thermistors on the low-voltage area of ​​the power module. The heat generated by the IGBT or other chips located in the high-voltage area during operation can be transmitted to the thermistor through heat conduction, and then the voltage across the thermistor can be obtained through the corresponding sampling circuit to detect the temperature of the IGBT or other chips.

[0004] However, this solution may cause the collected temperature data to differ greatly from the actual temperature of the device because the heat generated by the device that needs to be temperature monitored, such as the IGBT, cannot be effectively transferred to the thermistor. Summary of the invention

[0005] The purpose of the present application is to provide a power module, a motor drive control device and an electrical device, which can improve the accuracy, timeliness and reliability of detecting the temperature of power devices in the power module.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect of an embodiment of the present application, a power module is provided, the power module comprising at least one conversion unit; each of the conversion units at least comprises: an insulating substrate, a plurality of coating layers, a plurality of power devices and at least one thermal sensitive element;

[0008] Each of the coatings is attached to the surface of the insulating substrate respectively; each of the power devices is arranged on each of the coatings respectively, and each of the power devices outputs voltage or inputs voltage through each of the coatings respectively;

[0009] The thermosensitive element and at least a portion of the power device are arranged on the same covering layer, so that the heat generated by the power device to be detected is transferred to the thermosensitive element.

[0010] Optionally, at least a portion of the outer shell of the thermal-sensitive element is in contact with at least one of the coatings.

[0011] Optionally, the conversion unit includes at least a first coating and / or a second coating;

[0012] The input ends of the power devices belonging to the upper bridge arm in each of the power devices are respectively welded on the first covering layer; the first covering layer is used to be electrically connected to the power devices in the upper bridge arm;

[0013] The input ends of the power devices belonging to the lower bridge arm in each of the power devices are respectively welded on the second covering layer; the second covering layer is used to be electrically connected to the power devices in the lower bridge arm.

[0014] Optionally, at least one first power device is disposed on the first covering layer;

[0015] The first electrical end of the thermistor is connected to the first detection terminal of the temperature detection unit through the first coating, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit.

[0016] Optionally, at least one second power device is disposed on the second cladding layer;

[0017] The first electrical end of the thermistor is connected to the first detection terminal of the temperature detection unit through the second coating, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit.

[0018] Optionally, at least a portion of the housing of the thermosensitive element is in contact with the power device to be detected.

[0019] Optionally, the first electrical end of the thermistor is connected to at least one terminal of the power device, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit through a first connecting wire;

[0020] Wherein, the ground terminal of the power device serves as the first detection terminal of the temperature detection unit.

[0021] Optionally, the thermal element includes at least one of the following: a thermistor, a thermal diode, and a double-sided electrode thermal element;

[0022] The power device includes at least one of the following: an insulated gate bipolar transistor, a diode;

[0023] Optionally, the conversion unit further comprises at least one third coating;

[0024] The third covering layer is attached to the surface of the insulating substrate, and the third covering layer is adjacent to the first covering layer or the second covering layer;

[0025] The second detection terminal of the temperature detection unit is provided on the third cover layer.

[0026] A second aspect of the embodiments of the present application provides a motor drive control device, the motor drive control device comprising a drive unit and at least one power module as described in any one of the first aspects above;

[0027] The driving unit at least includes a temperature detection unit;

[0028] The first detection terminal of the temperature detection unit is connected to the first electrical end of the thermistor in the power module, and the second detection terminal of the temperature detection unit is connected to the second electrical end of the thermistor.

[0029] According to a third aspect of the embodiments of the present application, there is provided an electrical device, which includes a plurality of any power modules described in the first aspect, or includes the motor drive control device described in the second aspect.

[0030] The beneficial effects of the embodiments of the present application include:

[0031] A power module provided in an embodiment of the present application is provided by providing an insulating substrate, a plurality of coatings, a plurality of power devices and at least one thermistor in each conversion unit of the power module. In addition, each coating is attached to the surface of the insulating substrate. Each power device is provided on each coating, and each power device outputs a voltage or inputs a voltage through each coating. The thermistor and at least part of the power devices are provided on the same coating.

[0032] Among them, since the thermistor does not need to be set up for high and low voltage isolation, but can be directly set in the high voltage area of ​​the power module and / or the conversion unit, there can be a direct or indirect connection relationship between the thermistor and the power device. Specifically, the thermistor can be directly set on each coating on which each power device is installed or the thermistor is in direct contact with the power device. Therefore, there can be a lower thermal resistance between the thermistor and the power device, and a faster heat conduction speed, that is, the thermal resistance between the thermistor and the power device to be detected is relatively small, and the speed of heat transfer to the thermistor is also very fast. In this way, not only can the temperature of the thermistor be less different from the actual junction temperature of the power device, but also the thermal conduction delay and temperature detection delay can be reduced.

[0033] In addition, because thermistors do not need to be isolated from high and low voltages, the space required for arranging thermistors can be reduced, and the wiring layout and integration level of the power module and / or conversion unit can be optimized. Moreover, the power module provided in the embodiment of the present application adopts a non-isolated arrangement of thermistors, so the number of signal terminals of the power module can be reduced, thereby simplifying the welding process and achieving the purpose of reducing costs.

[0034] In this way, the accuracy, timeliness and reliability of detecting the temperature of power devices in the power module can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A schematic diagram of the structure of a first power module provided in an embodiment of the present application;

[0037] Figure 2 A schematic diagram of the structure of a double-sided electrode thermistor provided in an embodiment of the present application;

[0038] Figure 3 A schematic diagram of the arrangement of the first type of thermal sensitive element provided in the embodiment of the present application;

[0039] Figure 4 A schematic diagram of the arrangement of a second type of thermal sensitive element provided in an embodiment of the present application;

[0040] Figure 5 A schematic diagram of the arrangement of a third type of thermal sensitive element provided in an embodiment of the present application;

[0041] Figure 6 A schematic diagram of the arrangement of a fourth type of thermal sensitive element provided in an embodiment of the present application;

[0042] Figure 7 A schematic diagram of the arrangement of a fifth type of thermal element provided in an embodiment of the present application;

[0043] Figure 8 A schematic diagram of the arrangement of a sixth type of thermal sensitive element provided in an embodiment of the present application;

[0044] Fig. 9 A schematic diagram of the structure of a second power module provided in an embodiment of the present application;

[0045] Fig.10A schematic diagram of the structure of a temperature detection unit provided in an embodiment of the present application.

[0046] Reference numerals:

[0047] 100: insulating substrate, 101: power device, 102: thermal sensitive element, 103: first coating, 104: second coating, 105: third coating, 106: fourth coating;

[0048] G: power module, Z: conversion unit, A1: first detection terminal, A2: second detection terminal, L0: interconnection line, L1: bonding line, L2: bonding line, L3: first connection line, VDD: power supply terminal, AIN: positive acquisition terminal, COM: negative acquisition terminal, I: constant current source I, C: comparator, Y: isolation unit, C FLT : Negative collection terminal, D: Zener diode. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0051] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0052] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the invented product is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0053] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0054] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0055] In the related technology, relevant technicians generally set some thermistors on the low-voltage area of ​​the power module. The heat generated by the IGBT or other chips located in the high-voltage area during operation can be transmitted to the thermistor through heat conduction, and then the voltage across the thermistor can be obtained through the corresponding sampling circuit to detect the temperature of the IGBT or other chips.

[0056] However, this solution may cause the collected temperature data to differ greatly from the actual temperature of the device because the heat generated by the device that needs to be temperature monitored, such as the IGBT, cannot be effectively transferred to the thermistor.

[0057] For example, the junction temperature of the IGBT or other chips is generally detected by isolating the thermistor and the high-voltage part of the power module through an electrical gap and then conducting heat through air. Due to the need for high and low voltage isolation, the distance between the thermistor and the IGBT in this solution is far and the thermal resistance is large, resulting in a large difference between the temperature detected by the thermistor and the actual junction temperature of the IGBT. In addition, this method conducts heat through air, and there is a certain detection delay.

[0058] In addition, since the thermistor is arranged in a high-low voltage isolation manner, it will take up more space, which is not conducive to the wiring layout and integrated design of the module chip. It can be seen that the solution of the related technology has many shortcomings.

[0059] To this end, an embodiment of the present application provides a power module, and the power module includes at least one conversion unit, by arranging an insulating substrate, multiple coatings, multiple power devices and at least one thermistor in each conversion unit. In addition, each coating is respectively attached to the surface of the insulating substrate; each power device is respectively arranged on each coating, and each power device outputs a voltage or inputs a voltage through each coating. The thermistor and at least part of the power devices are arranged on the same coating so that the heat generated by the power device to be detected is transferred to the thermistor. In this way, the accuracy, timeliness and reliability of detecting the temperature of the power device in the power module can be improved.

[0060] The embodiments of the present application are described by taking a power module used in an electrical device as an example. However, it does not mean that the power module provided in the embodiments of the present application can only be used in electrical devices to realize functions such as power conversion. For example, the power module can be used to convert external input direct current into alternating current for output, which is not limited in the embodiments of the present application.

[0061] The power module provided in the embodiments of the present application is explained in detail below.

[0062] Figure 1 This is a schematic diagram of the structure of a power module provided in the present application. The power module can be applied to any possible device or apparatus, and the present application embodiment does not limit this. Figure 1 The embodiment of the present application provides a power module, and the power module G includes at least one conversion unit Z. Each conversion unit Z includes at least: an insulating substrate 100, a plurality of coating layers, a plurality of power devices 101 and at least one thermal sensitive element 102.

[0063] Each cladding layer is respectively attached to the surface of the insulating substrate 100. Each power device 101 is respectively disposed on each cladding layer, and each power device 101 outputs a voltage or inputs a voltage through each cladding layer.

[0064] The thermosensitive element 102 and at least a portion of the power device 101 are disposed on the same coating layer, so that the heat generated by the power device 101 to be detected is transferred to the thermosensitive element 102 .

[0065] In addition, the first electrical terminal and the second electrical terminal of the thermistor 102 can be used to connect to a temperature detection unit, respectively.

[0066] Each conversion unit Z may correspond to a phase of power supply, and if the power module G needs to be applied in a three-phase power supply scenario, three conversion units Z need to be provided in the power module G. The embodiment of the present application does not limit this.

[0067] For example, see Figure 1 , Figure 1The provided conversion unit Z may include a first cladding layer 103 and a second cladding layer 104 , and each power device 101 is specifically arranged on the first cladding layer 103 and / or the second cladding layer 104 .

[0068] In addition, there is a certain electrical gap between the first cover layer 103 and the second cover layer 104 , that is, there are certain areas on the surface of the insulating substrate 100 that are not covered with conductive materials between the first cover layer 103 and the second cover layer 104 .

[0069] Optionally, each coating may be a metal coating, such as a copper coating, which is not limited in the embodiment of the present application.

[0070] Optionally, the power device 101 includes at least one of the following: an IGBT, a diode. Specifically, the power device 101 may include a P-channel IGBT and / or an N-channel IGBT, and the diode may be a fast recovery diode (FRD), which may be configured according to actual needs, and the embodiment of the present application does not limit this.

[0071] In addition, see Figure 1 , each power device 101 in the power module G may be a power device in a full-bridge circuit or a half-bridge circuit. Moreover, the full-bridge circuit and / or the half-bridge circuit may generally be divided into an upper bridge arm and a lower bridge arm. In this embodiment, the power device 101 disposed on the first cladding layer 103 may belong to the upper bridge arm, and the power device 101 disposed on the second cladding layer 104 may belong to the lower bridge arm.

[0072] For example, Figure 1 The components M1, M2, M3, and M4 shown in the figure may be the IGBTs in the upper bridge arm, and the components D1, D2, and D3 may be the FRDs in the upper bridge arm. Figure 1 The components M5, M6, M7, and M8 shown in the figure may be the IGBTs in the lower bridge arm, and the components D4, D5, and D6 may be the FRDs in the lower bridge arm.

[0073] It should be noted that Figure 1 The structure shown is only an example and does not mean that the components in the power module G and / or the conversion unit Z provided in the embodiment of the present application can only be used in Figure 1 The configuration shown is not limited to this embodiment of the present application.

[0074] Optionally, the thermistor 102 may be a device whose electrical characteristics such as electrical conductivity may change with temperature. Therefore, the temperature of the thermistor 102 may be determined by detecting the voltage of the thermistor 102 .

[0075] Optionally, the thermistor 102 may be specifically configured to change the resistance of the thermistor 102 under the action of the heat generated by the power device 101 , so as to adjust the voltage difference between the first electrical terminal and the second electrical terminal of the thermistor 102 .

[0076] It should be understood that after the heat generated by the power device 101 is transferred to the thermistor 102, the temperature of the thermistor 102 will gradually increase. If the thermistor 102 is a negative temperature coefficient thermistor, the resistance of the thermistor 102 will decrease; if the thermistor 102 is a positive temperature coefficient thermistor, the resistance of the thermistor 102 will increase. In other words, if the thermistor 102 is a negative temperature coefficient thermistor, the voltage of the thermistor 102 will increase as the temperature increases; if the thermistor 102 is a positive temperature coefficient thermistor, the voltage of the thermistor 102 will decrease. In this way, the temperature of the thermistor 102 can be determined by the voltage difference.

[0077] Exemplarily, the thermal element 102 includes at least one of the following: a thermistor, a thermal diode, and a double-sided electrode thermistor. The thermistor may refer to a resistor whose resistance value changes with temperature. The thermal diode is a temperature-sensitive semiconductor device whose resistance value may also change with temperature.

[0078] However, the resistance of the double-sided electrode thermistor can also change with the change of temperature, see Figure 2 , Figure 2 A schematic diagram of the structure of a double-sided electrode thermistor is shown, and the double-sided electrode thermistor includes an upper electrode 90, an intermediate layer 91, and a lower electrode 92. Moreover, the upper electrode 90 and the lower electrode 92 can be made of metal or other conductive materials, and the intermediate layer 91 can be made of a thermosensitive material, which is not limited in the embodiment of the present application.

[0079] Generally, if current flows into the double-sided electrode thermistor from the upper electrode 90, the current can flow through the middle layer 91 and flow out from the lower electrode 92; if current flows into the double-sided electrode thermistor from the lower electrode 92, the current can flow through the middle layer 91 and flow out from the upper electrode 90. The present application embodiment does not limit this.

[0080] It can be understood that since the thermistor and the thermistor diode generally need to be welded and wired from the left and right sides of the device, and the double-sided electrode thermistor can directly weld the electrodes on the surface of the coating or the surface of other devices, when the double-sided electrode thermistor is used, the space occupied by the thermistor 102 inside the power module G can be compressed.

[0081] Specifically, the thermistor 102 and at least part of the power device 101 can be arranged on the same coating, which may mean that the thermistor 102 is directly welded on the coating on which the power device 101 is arranged, or the thermistor 102 is indirectly arranged on the coating by welding on a component arranged on the coating.

[0082] Specifically, it may mean that the thermistor 102 may be welded on a covering layer used to set one or more power devices 101 to be detected, or it may mean that the thermistor 102 is directly welded on one or more power devices 101 to be detected, which is not limited in the embodiments of the present application.

[0083] That is to say, there may be a connection relationship between the thermosensitive element 102 and the power device 101 to be detected. For example, the thermosensitive element 102 and the power device 101 to be detected may be directly contacted and connected; for another example, the thermosensitive element 102 and the power device 101 to be detected may be connected by providing a coating of the power device 101 to be detected or any other possible connection member.

[0084] That is, heat can be transferred between the thermistor 102 and the power device 101 to be detected through a corresponding heat-conducting material, which can be metal or other non-metallic materials with good thermal conductivity. The heat-conducting material can have low thermal resistance and high heat conduction speed.

[0085] For example, the thermally conductive material may include at least one of the following: a coating for mounting the power device 101 to be detected, a housing of the power device 101 to be detected, a housing of the thermistor 102, a bonding wire made of a metal material or a non-metal material connected between the thermistor 102 and the power device 101 to be detected, and any other thermally conductive material with a relatively low thermal resistance. This embodiment of the present application is not limited thereto.

[0086] Moreover, in the present embodiment, the thermistor 102 does not need to be isolated from the high and low voltages, and the thermistor 102 can be directly disposed in the high voltage area of ​​the power module G or the conversion module Z, that is, the thermistor 102 can be directly disposed on each coating, or the thermistor 102 can be mounted on the surface of the corresponding power device 101 so that the thermistor 102 is in direct contact with the power device 101.

[0087] For example, if a power device 101 is mounted on the first cladding layer 103, then the thermal element 102 can be disposed on the first cladding layer 103 to conduct the heat generated by the power device 101 to the thermal element 102 through the first cladding layer 103 (e.g. Figure 1If a power device 101 is mounted on the second cladding layer 104 , the heat generated by the power device 101 can be conducted to the thermal element 102 through the second cladding layer 104 .

[0088] For another example, if a power device 101 is in direct contact with a thermistor 102, in this case, the thermistor 102 and the power device 101 can be regarded as being arranged on the same coating, and heat can also be conducted to the thermistor 102 through the housing of the power device 101. The specific arrangement position of the thermistor 102 in the power module G is determined, and the embodiment of the present application does not limit this.

[0089] Optionally, continue to see Figure 1 The first electrical end of the thermistor 102 can be used to connect to the first detection terminal A1 of the temperature detection unit, and the second electrical end of the thermistor 102 can be used to connect to the second detection terminal A2 of the temperature detection unit. Furthermore, the first detection terminal A1 and the second detection terminal A2 can transmit the voltage difference to the temperature detection unit.

[0090] Optionally, the temperature detection unit can be a device arranged outside the power module G, which can specifically output a corresponding sampling current to the first electrical end and the second electrical end of the thermistor 102 through the first detection terminal A1 and the second detection terminal A2, and can detect the voltage (that is, the voltage difference) between the first electrical end and the second electrical end of the thermistor 102 through the first detection terminal A1 and the second detection terminal A2, and determine the temperature of the thermistor 102 based on the voltage difference.

[0091] Exemplarily, the first detection terminal A1 and the second detection terminal A2 can be respectively used as two acquisition terminals of the temperature sampling unit outside the power module G. Generally, the second detection terminal A2 can be used as the positive acquisition terminal of the temperature detection unit to input the acquisition current into the first electrical terminal of the thermistor 102; the first detection terminal A1 can be used as the negative acquisition terminal of the temperature detection unit and grounded so that the acquisition current can form a complete return path. This embodiment of the application is not limited to this.

[0092] In addition, the first detection terminal A1 can generally be set on the first coating 103, which can be determined according to the setting position and specific connection relationship of the thermistor 102. The second detection terminal A2 can be set at any possible position in the conversion unit Z, and it is only necessary to ensure that the temperature detection unit outputs the sampling current to the thermistor 102 through the second detection terminal A2 without affecting the normal operation of other coatings or components. This embodiment of the application is not limited to this.

[0093] It is worth noting that in order to more clearly explain the power module G provided in the embodiment of the present application, the following Figure 1 Take the specific working principle of power module G as an example to introduce.

[0094] In the initial state or default state, the power module G and / or the conversion unit Z are not working, and the power devices 101 will not generate heat. Therefore, the resistance of the thermistor 102 will generally not change when it is in a normal temperature environment. If the temperature detection unit outputs the above-mentioned sampling current to the first electrical terminal and the second electrical terminal of the thermistor 102 (specifically, the sampling current can be output to the thermistor 102 through the first detection terminal A1 and the second detection terminal A2), the temperature detected by the temperature acquisition unit is the normal temperature.

[0095] When the power module G and / or the conversion unit Z are in operation, each power device 101 starts to operate and generates heat. Since each power device 101 is respectively arranged on each coating layer (such as Figure 1 The first cladding layer 103 or the second cladding layer 104 in the embodiment of the present invention is formed on the power device 101. The metal has good thermal conductivity, so the heat of each power device 101 can be quickly transferred to the corresponding cladding layer (such as the first cladding layer 103 or the second cladding layer 104). Figure 1 As shown, the thermistor 102 is disposed on the second coating 104 and between the element M5 and the element M6, so the heat generated by each power device 101 on the second coating 104 can be quickly transferred to the thermistor 102 through the second coating 104, so that the thermistor 102 is quickly heated up to adjust the resistance value. At this time, the temperature detection unit outputs the above-mentioned sampling current to the thermistor 102, and the voltage of the thermistor 102 will change as the temperature of the thermistor 102 rises, and the temperature acquisition unit can determine the current temperature of the thermistor 102 according to the collected voltage difference.

[0096] In addition, if the thermistor 102 is directly connected to a power device 101 to be detected, the heat of the power device 101 can be quickly transferred to the thermistor 102 through the housing of the power device 101 and the housing of the thermistor 102, thereby allowing the thermistor 102 to heat up quickly to adjust the resistance value.

[0097] It is worth noting that in the power module G provided in the embodiment of the present application, since the thermistor 102 does not need to be set up for high and low voltage isolation, and since at least part of the power device 101 and the thermistor 102 are set on the same coating, heat conduction through the air is not required, but the heat generated by the power device 101 can be directly transferred to the thermistor 102 through the above-mentioned thermal conductive material. Therefore, the thermal resistance between the thermistor 102 and the power device 101 to be detected is relatively small, and the thermal conductivity of the thermal conductive material is fast, and the speed of heat transfer to the thermistor 102 is also very fast. In this way, not only can the temperature of the thermistor 102 be less different from the actual junction temperature of the power device 101, but also the thermal conduction delay and temperature detection delay can be reduced.

[0098] In the embodiment of the present application, an insulating substrate 100, a plurality of coatings, a plurality of power devices 101 and at least one thermosensitive element 102 are provided in each conversion unit Z of the power module G. Furthermore, each coating is attached to the surface of the insulating substrate 100. Each power device is provided on each coating, and each power device 101 outputs a voltage or inputs a voltage through each coating. The thermosensitive element 102 and at least part of the power devices 101 are provided on the same coating.

[0099] Among them, since the thermistor 102 does not need to be set up for high and low voltage isolation, but can be directly set in the high voltage area of ​​the power module G and / or the conversion unit Z, there can be a direct or indirect connection relationship between the thermistor 102 and the power device 101. Specifically, the thermistor 102 can be directly set on each coating on which each power device 101 is installed, or the thermistor 102 is in direct contact with the power device 101. Therefore, there can be a lower thermal resistance between the thermistor 102 and the power device 101, and a faster heat conduction speed, that is, the thermal resistance between the thermistor 102 and the power device 101 to be detected is relatively small, and the speed of heat transfer to the thermistor 102 is also very fast. In this way, not only can the temperature of the thermistor 102 be less different from the actual junction temperature of the power device 101, but also the heat conduction delay and temperature detection delay can be reduced.

[0100] In addition, because the thermistor 102 does not need to be isolated from high and low voltages, the space required for arranging the thermistor 102 can be reduced, and the wiring layout and integration level of the power module G and / or the conversion unit Z can be optimized. Moreover, the power module G provided in the embodiment of the present application adopts a non-isolated manner to arrange the thermistor 102, so the number of signal terminals of the power module G can be reduced, thereby simplifying the welding process and achieving the purpose of reducing costs.

[0101] In this way, the accuracy, timeliness and reliability of detecting the temperature of power devices in the power module can be improved.

[0102] In a possible manner, if each conversion unit Z includes the first cladding layer 103 and the second cladding layer 104 , then in the conversion unit Z, the input end of the power device 101 belonging to the upper bridge arm in each power device 101 is respectively welded on the first cladding layer 103 .

[0103] The input ends of the power devices 101 belonging to the lower bridge arm in each power device 101 are respectively welded on the second cladding layer 104 .

[0104] For example, if one power device in the upper bridge arm is an IGBT, the collector of the IGBT may be welded to the first cladding layer 103. If another power device in the upper bridge arm is an FRD, the cathode of the FRD may be welded to the first cladding layer 103.

[0105] For another example, if a power device in the lower bridge arm is an IGBT, the collector of the IGBT can be welded to the second cover layer 104. If another power device in the lower bridge arm is an FRD, the cathode of the FRD can be welded to the second cover layer 104.

[0106] It can be understood that the first cladding 103 can be used to electrically connect to the power device 101 in the upper bridge arm, and the second cladding 104 can be used to electrically connect to the power device 101 in the lower bridge arm, so that the first cladding 103 and the second cladding 104 output voltage or input voltage to each power device 101 respectively.

[0107] In this way, it is ensured that each power device 101 can be turned on or off normally, and that voltage can be input or output to each power device 101 through the first cladding layer 103 and / or the second cladding layer 104 when each power device 101 is working, so as to realize a current path.

[0108] In one possible implementation, see Figure 1 , the conversion unit Z further includes at least one third coating 105 .

[0109] The third cover layer 105 is attached to the surface of the insulating substrate 100 , and the third cover layer 105 is adjacent to the first cover layer 103 or the second cover layer 104 .

[0110] That is to say, the third covering layer 105 is not directly connected to the first covering layer 103 and the second covering layer 104 , and there is a certain electrical gap between the third covering layer 105 , the first covering layer 103 and the second covering layer 104 .

[0111] Optionally, the second detection terminal A2 of the temperature detection unit is disposed on the third covering layer 105 .

[0112] In a possible manner, the conversion unit Z may further include a fourth cover layer 106. Moreover, the fourth cover layer 106 is not directly connected to the first cover layer 103 and the second cover layer 104, and the fourth cover layer 106 is not directly connected to the third cover layer 105 either.

[0113] In addition, an additional first detection terminal A1 of the temperature detection unit may also be provided on the fourth cover layer 106 , and the second cover layer 104 is also used to connect the fourth cover layer 106 through the interconnection line L0 .

[0114] Optionally, the interconnection line L0 may be a conductive connection line, such as a metal line such as a copper line, an aluminum line, or other conductive non-metallic line. Specifically, it may be used to transmit current between each IGBT in the upper bridge arm and each IGBT in the lower bridge arm, and may also transmit other current on the second covering layer 104 to the fourth covering layer 106, which is not limited in the embodiment of the present application.

[0115] It is worth noting that since the above-mentioned temperature detection unit may need to input a sampling current to the second electrical end of the thermistor 102 through the second detection terminal A2, and the sampling current can also flow back to the temperature detection unit through the first detection terminal A1 after flowing through the first electrical end of the thermistor 102, so that the temperature detection unit can collect the voltage difference between the two ends of the thermistor 102, therefore, the second detection terminal A2 is set on the independent third covering layer 105, and the first detection terminal A1 is set on the fourth covering layer 106 that has an electrical gap with the first covering layer 103 and the second covering layer 104.

[0116] In this way, it is possible to avoid the problem that the thermosensitive element 102 disposed on the second cover 104 needs to reflux the current through the first detection terminal A1 disposed on the first cover 103, which may cause the currents on the first cover 103 and the second cover 104 to interfere with each other. In other words, it is possible to avoid the problem that the sampling current input by the temperature detection unit affects the normal operation of the elements on other covers, or the problem that the current on other covers affects the sampling current. In this way, the reliability and practicality of the power module G can be improved.

[0117] In order to achieve rapid heat transfer between power devices and thermal sensitive elements and minimize thermal resistance and heat loss, the embodiments of the present application also provide several possible implementation methods, which are described below for details.

[0118] In a possible implementation, at least a portion of the outer shell of the thermosensitive element 102 is in contact with at least one of the above-mentioned coatings.

[0119] For example, at least a portion of the outer shell of the thermosensitive element 102 may be in contact with the first cover layer 103 or the second cover layer 104 .

[0120] In this embodiment, at least part of the housing of the thermistor 102 may include at least one of the following: a packaging housing of the thermistor 102 , a first electrical terminal and / or a second electrical terminal of the thermistor 102 , and any other possible pins of the thermistor 102 .

[0121] It is understandable that, since in this embodiment, the housing of the thermistor 102 needs to be in contact with the first coating 103 or the second coating 104, it is convenient to transmit current, and the first electrical end and / or the second electrical end of the thermistor 102 may be preferably in contact with the first coating 103 or the second coating 104. This embodiment of the present application is not limited to this.

[0122] Exemplarily, if the thermistor 102 is the above-mentioned double-sided electrode thermistor, one of the upper electrode or the lower electrode of the double-sided electrode thermistor can be directly welded to the first coating 103 or the second coating 104, and the other electrode can be connected to the second detection terminal A2 by means of a connecting wire or a connecting clip.

[0123] If the thermistor 102 is the thermistor or thermistor diode, one electrical end of the thermistor or thermistor diode can be directly welded to the first coating 103 or the second coating 104, and the other end can be connected or welded to the second detection terminal A2. The arrangement position of the thermistor 102 can be adjusted, and the embodiment of the present application does not limit this.

[0124] In this embodiment, see Figure 3 and Figure 4 At least one first power device is disposed on the first cladding layer 103 .

[0125] The first electrical end of the thermistor 102 is connected to the first detection terminal A1 of the temperature detection unit through the first coating 103 , and the second electrical end of the thermistor 102 is connected to the second detection terminal A2 of the temperature detection unit.

[0126] Specifically, if the second detection terminal A2 is disposed on the third cover layer 105 , the second electrical end of the thermistor 102 may be connected to the second detection terminal A2 through the third cover layer 105 .

[0127] Optionally, the first power device may refer to any one of the power devices 101 , an IGBT or an FRD located in the upper bridge arm.

[0128] For example, see Figure 3 , Figure 3 The description is made by taking the case where the thermosensitive element 102 is the double-sided electrode thermosensitive device and the double-sided electrode thermosensitive element is arranged between the two leftmost IGBTs in the first covering layer 103 as an example.

[0129] Specifically, the lower electrode of the double-sided electrode thermistor (i.e., the first electrical end of the thermistor 102) can be directly welded to the first coating 103, and the upper electrode of the double-sided electrode thermistor (i.e., the second electrical end of the thermistor 102) can be connected to the third coating 105 via the bonding wire L1. Since the first coating 103 is provided with the first detection terminal A1, and the second detection terminal A2 is provided or welded on the third coating 105, the voltage drop of the double-sided electrode thermistor can be collected and identified by the temperature detection unit through the first detection terminal A1 and the second detection terminal A2.

[0130] For example, relevant technical personnel may establish in advance a correspondence or a correspondence table between the voltage difference of the double-sided electrode thermistor and the temperature of the double-sided electrode thermistor, and then the temperature detection unit may determine a specific temperature value according to the voltage difference of the double-sided electrode thermistor by looking up the table or finding the correspondence. The embodiments of the present application are not limited to this.

[0131] It is worth noting that Figure 3 The general working principle of the structure shown is as follows: the temperature detection unit can use the first coating 103 as a reference ground. The sampling current output by the temperature detection unit can be input through the second detection terminal A2, and the sampling current reaches the upper electrode of the double-sided electrode thermistor (thermosensitive device 105) through the bonding wire L1, flows through the middle layer and the lower electrode of the double-sided electrode thermistor, and is output to the first coating 103, and flows back to the temperature detection unit through the first detection terminal A1 on the first coating 103. At the same time, the temperature detection unit collects and identifies the voltage difference on the double-sided electrode thermistor through the first detection terminal A1 and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up a table or other methods based on the voltage difference of the double-sided electrode thermistor.

[0132] In addition, see Figure 4 , Figure 4 The following description will be made by taking the case where the thermal element 102 is the thermistor or thermistor diode mentioned above, and the thermistor or thermistor diode is arranged between the leftmost IGBT in the first cladding layer 103 and the third cladding layer 105 as an example.

[0133] Specifically, one electrode of the thermistor or the negative electrode of the thermistor diode (i.e., the first electrical terminal of the thermistor 102) can be directly welded to the first coating 103, and the other electrode of the thermistor or the positive electrode of the thermistor diode (i.e., the second electrical terminal of the thermistor 102) can be directly welded to the second detection terminal A2 (or the third coating 105). Since the first detection terminal A1 is provided on the first coating 103, and the second detection terminal A2 is provided or welded on the third coating 105, the voltage drop of the thermistor or the thermistor diode can be collected and identified by the temperature detection unit through the first detection terminal A1 and the second detection terminal A2.

[0134] It is worth noting that Figure 4 The general working principle of the structure shown is as follows: the temperature detection unit can use the first coating 103 as a reference ground. And the sampling current output by the temperature detection unit can be input through the second detection terminal A2, and the sampling current reaches the other electrode of the thermistor or the positive electrode of the thermistor diode (the second electrical end of the thermistor 105) through the third coating 105, flows through the thermistor or the thermistor diode, outputs to the first coating 103, and flows back to the temperature detection unit through the first detection terminal A1 on the first coating 103. At the same time, the temperature detection unit collects and identifies the voltage difference on the thermistor or the thermistor diode through the first detection terminal A1 and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up a table or other methods based on the voltage difference of the thermistor or the thermistor diode.

[0135] It is worth noting that, since the coatings and the bonding wire L1 are generally made of metal materials such as copper, silver, and aluminum, which have good thermal conductivity and electrical conductivity, the thermal resistance between the thermistor 102 and the power device 101 to be detected is relatively small, and the speed of heat transfer to the thermistor 102 is also very fast. In this way, the accuracy, timeliness, and reliability of detecting the temperature of the power device in the power module can be improved.

[0136] In this embodiment, see Figure 5 and Figure 6 At least one second power device is disposed on the second cladding layer 104 .

[0137] The first electrical end of the thermistor 102 is connected to the first detection terminal A1 of the temperature detection unit through the second coating 104 , and the second electrical end of the thermistor 102 is connected to the second detection terminal A2 of the temperature detection unit.

[0138] Specifically, if the second detection terminal A2 is disposed on the third cover layer 105 , the second electrical end of the thermistor 102 may be connected to the second detection terminal A2 through the third cover layer 105 .

[0139] Optionally, the second power device may refer to any one of the power devices 101 , an IGBT or an FRD located in the lower bridge arm.

[0140] For example, see Figure 5 , Figure 5 The description is made by taking the case where the thermosensitive element 102 is the double-sided electrode thermosensitive device and the double-sided electrode thermosensitive element is arranged between the two leftmost IGBTs in the second covering layer 104 as an example.

[0141] Specifically, the lower electrode of the double-sided electrode thermistor (i.e., the first electrical end of the thermistor 102) can be directly welded to the second coating 104, and the upper electrode of the double-sided electrode thermistor (i.e., the second electrical end of the thermistor 102) can be connected to the third coating 105 via the bonding wire L2. Since the second detection terminal A2 is disposed or welded on the third coating 105, and the second coating 104 is connected to the fourth coating 106 via the interconnection wire L0, and the fourth coating 106 is provided with the first detection terminal A1, the voltage drop of the double-sided electrode thermistor can be collected and identified by the temperature detection unit via the first detection terminal A1 and the second detection terminal A2.

[0142] It is worth noting that Figure 5 The general working principle of the structure shown is as follows: the temperature detection unit can use the second coating 104 as a reference ground. And the sampling current output by the temperature detection unit can be input through the second detection terminal A2 (or the third coating 105), and the sampling current reaches the upper electrode of the double-sided electrode thermistor (thermometer 105) through the bonding wire L2, flows through the middle layer and the lower electrode of the double-sided electrode thermistor, outputs to the second coating 104 and flows to the third through the interconnection line L0, and flows back to the temperature detection unit through the first detection terminal A1 on the fourth coating 106. At the same time, the temperature detection unit collects and identifies the voltage difference on the double-sided electrode thermistor through the first detection terminal A1 and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up a table or other methods based on the voltage difference of the double-sided electrode thermistor.

[0143] In addition, see Figure 6 , Figure 6 The following description will be made by taking the case where the thermal element 102 is the thermistor or thermistor diode mentioned above, and the thermistor or thermistor diode is disposed between the leftmost IGBT in the second cladding layer 104 and the third cladding layer 105 as an example.

[0144] Specifically, one electrode of the thermistor or the negative electrode of the thermistor diode (i.e., the first electrical terminal of the thermistor 102) can be directly welded on the fourth coating 106, and the other electrode of the thermistor or the positive electrode of the thermistor diode (i.e., the second electrical terminal of the thermistor 102) can be directly welded on the third coating 105. Since the second detection terminal A2 is disposed or welded on the third coating 105, and the second coating 104 is connected to the fourth coating 106 through the interconnection line L0, and the fourth coating 106 is provided with the first detection terminal A1, the voltage drop of the double-sided electrode thermistor can be collected and identified by the temperature detection unit through the first detection terminal A1 and the second detection terminal A2.

[0145] It is worth noting that Figure 6 The general working principle of the structure shown is as follows: the temperature detection unit can use the first coating 103 as a reference ground. And the sampling current output by the temperature detection unit can be input through the second detection terminal A2 (or the third coating 105), and the sampling current reaches the other electrode of the thermistor or the positive electrode of the thermistor diode (the second electrical end of the thermistor 105) through the third coating 105, flows through the thermistor or the thermistor diode, and is output to the first coating 103, and flows back to the temperature detection unit through the first detection terminal A1 on the first coating 103. At the same time, the temperature detection unit collects and identifies the voltage difference on the thermistor or the thermistor diode through the first detection terminal A1 and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up the table or other methods based on the voltage difference of the thermistor or the thermistor diode.

[0146] It is worth noting that, since the coatings and the bonding wire L1 are generally made of metal materials such as copper, silver, and aluminum, which have good thermal conductivity and electrical conductivity, the thermal resistance between the thermistor 102 and the power device 101 to be detected is relatively small, and the speed of heat transfer to the thermistor 102 is also very fast. In this way, the accuracy, timeliness, and reliability of detecting the temperature of the power device in the power module can be improved.

[0147] In a possible implementation, at least a portion of the housing of the thermosensitive element 102 is in contact with the power device 101 to be detected.

[0148] In this embodiment, at least part of the housing of the thermistor 102 may include at least one of the following: a packaging housing of the thermistor 102 , a first electrical terminal and / or a second electrical terminal of the thermistor 102 , and any other possible pins of the thermistor 102 .

[0149] It is understandable that, since in this embodiment, the housing of the thermistor 102 needs to be in contact with the power device 101 to be detected, it is convenient to transmit current, and it is preferred to make the first electrical end and / or the second electrical end of the thermistor 102 contact with the power device 101 to be detected. This embodiment of the application is not limited to this.

[0150] Exemplarily, if the thermistor 102 is the above-mentioned double-sided electrode thermistor, one of the upper electrode or the lower electrode of the double-sided electrode thermistor can be directly welded to the power device 101, and the other electrode can be connected to the second detection terminal A2 by means of a connecting wire or a connecting clip.

[0151] If the thermistor 102 is the thermistor or thermistor diode, one electrical end of the thermistor or thermistor diode can be directly welded to the first coating 103 or the second coating 104, and the other end can be connected or welded to the second detection terminal A2. The arrangement position of the thermistor 102 can be adjusted, and the embodiment of the present application does not limit this.

[0152] In this embodiment, see Figure 7 and Figure 8 The first electrical end of the thermistor 102 is connected to at least one terminal of the power device 101, and the second electrical end of the thermistor 102 is connected to the second detection terminal A2 of the temperature detection unit through the first connecting line L3.

[0153] It is understandable that if the power device 101 has a ground terminal, the first electrical terminal of the thermistor 102 can be directly welded to the ground terminal of the power device 101, for example, it can be welded to the emitter of the IGBT, and this embodiment of the application does not limit this.

[0154] If the power device 101 does not have a ground terminal, the thermistor 102 may be mounted on the housing surface of the power device 101 , and the thermistor 102 may be connected to the first detection terminal by flying wires or other methods.

[0155] Specifically, the first electrical terminal of the thermistor 102 is connected to the ground terminal of the power device 101 . The ground terminal of the power device 101 may refer to the reference ground of the power device 101 or any other possible ground terminal, which is not limited in the embodiment of the present application.

[0156] Optionally, if the second detection terminal A2 is disposed on the third cover layer 105 , the second electrical end of the thermistor 102 may be connected to the third cover layer 105 via the first connecting line L3 .

[0157] The ground terminal of the power device 101 can be used as the first detection terminal A1 of the temperature detection unit. In this case, the power device 101 can refer to an IGBT in the upper bridge arm or the lower bridge arm, which is not limited in the embodiment of the present application.

[0158] For example, see Figure 7 , Figure 7 The description is made by taking the case where the thermosensitive element 102 is the double-sided electrode thermosensitive device and the double-sided electrode thermosensitive element is mounted on the leftmost surface of the IGBT in the first cover layer 103 as an example.

[0159] Specifically, the lower electrode of the double-sided electrode thermal sensor (i.e., the first electrical end of the thermal element 102) can be directly welded to the emitter of the IGBT on the leftmost side of the first cladding 103, and the upper electrode of the double-sided electrode thermal sensor (i.e., the second electrical end of the thermal element 102) can be connected to the third cladding 105 through the first connecting line L3. Since the second detection terminal A2 is arranged or welded on the third cladding 105, and the emitter of the IGBT in the power module G is grounded, that is, the emitter of the IGBT can be used as the first detection terminal A1, the voltage drop of the double-sided electrode thermal sensor can be collected and identified by the temperature detection unit through the first detection terminal A1 and the second detection terminal A2.

[0160] It is worth noting that Figure 7 The general working principle of the structure shown is as follows: the temperature detection unit can use the first coating 103 as a reference ground. And the sampling current output by the temperature detection unit can be input through the second detection terminal A2, and the sampling current reaches the upper electrode of the double-sided electrode thermistor (thermosensitive device 105) through the first connecting line L3, flows through the middle layer and the lower electrode of the double-sided electrode thermistor, and is output to the emitter of the IGBT. Since the emitter of the IGBT is grounded, the sampling current can be refluxed. At the same time, the temperature detection unit collects and identifies the voltage difference on the double-sided electrode thermistor through the first detection terminal A1 reflux and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up a table or other methods based on the voltage difference of the double-sided electrode thermistor.

[0161] In addition, see Figure 8 , Figure 8 The following description will be made by taking the case where the thermosensitive element 102 is the double-sided electrode thermosensitive device and the double-sided electrode thermosensitive element is mounted on the leftmost surface of the IGBT in the second cover layer 104 as an example.

[0162] Specifically, the lower electrode of the double-sided electrode thermal sensor (i.e., the first electrical end of the thermal element 102) can be directly welded to the emitter of the IGBT on the leftmost side of the second cladding 104, and the upper electrode of the double-sided electrode thermal sensor (i.e., the second electrical end of the thermal element 102) can be connected to the third cladding 105 through the first connecting line L3. Since the second detection terminal A2 is arranged or welded on the third cladding 105, and the emitter of the IGBT in the power module G is grounded, that is, the emitter of the IGBT can be used as the first detection terminal A1, the voltage drop of the double-sided electrode thermal sensor can be collected and identified by the temperature detection unit through the first detection terminal A1 and the second detection terminal A2.

[0163] It is worth noting that Figure 8 The general working principle of the structure shown is as follows: the temperature detection unit can use the first coating 103 as a reference ground. And the sampling current output by the temperature detection unit can be input through the second detection terminal A2, and the sampling current reaches the upper electrode of the double-sided electrode thermistor (thermosensitive device 105) through the first connecting line L3, flows through the middle layer and the lower electrode of the double-sided electrode thermistor, and is output to the emitter of the IGBT. Since the emitter of the IGBT is grounded, the sampling current can be refluxed. At the same time, the temperature detection unit collects and identifies the voltage difference on the double-sided electrode thermistor through the first detection terminal A1 reflux and the second detection terminal A2, and then obtains the resistance value and temperature of the double-sided electrode thermistor by looking up a table or other methods based on the voltage difference of the double-sided electrode thermistor.

[0164] In addition, if the FRD or other power devices in the power module provided in the embodiment of the present application also have a ground terminal, the lower electrode or upper electrode of the thermistor 102 can also be welded to the ground terminal of the RD or other power devices, which is not limited in the embodiment of the present application.

[0165] It is understandable that if the thermistor 102 is the above-mentioned thermistor or thermistor diode, then only at least one outer surface of the thermistor 102 can be mounted on the surface of the power device 101, and the two electrical ends of the thermistor 102 can be connected to the first detection terminal A1 and the second detection terminal A2 respectively by means of flying wires or connecting clips. In addition, one electrode of the thermistor or the negative electrode of the thermistor diode can be welded to the ground terminal of the power device 101, and the other electrode of the thermistor or the positive electrode of the thermistor diode can be connected to the second detection terminal A2 by means of flying wires or connecting clips. The specific setting can be made according to actual needs, and the embodiment of the present application does not limit this.

[0166] As can be seen from the above embodiments, the present application provides a variety of embodiments for arranging the thermosensitive element 102 in the power module in different ways, which can be selected according to actual needs. It can be seen that the power module provided by the embodiments of the present application has flexibility, applicability and diversity.

[0167] In order to further introduce the connection relationship or setting method between each power module 104, each coating and each connecting wire in the power module G provided in the embodiment of the present application, the embodiment of the present application also provides the following Fig. 9 See the structural diagram shown in Figure 1. Fig. 9 , Fig. 9 A power module G with three conversion units is disclosed. The arrangement positions and connection relationships of the components are shown in the figure, and the embodiments of the present application are not described in detail here.

[0168] in, Fig. 9 Terminal 20 is the collector (bus positive) signal terminal of the IGBT in the upper bridge, terminal 22 is the gate signal terminal of the IGBT in the upper bridge, terminal A1 located in the first covering layer 103 can also be used as the collector (bus positive) signal terminal of the upper bridge IGBT, terminal 25 is the collector (three-phase) signal terminal of the IGBT in the upper bridge, terminal A1 located in the fourth covering layer 106 can also be used as the emitter (three-phase) signal terminal of the upper bridge IGBT, terminal 25 is the collector (three-phase) signal terminal of the IGBT in the upper bridge, terminal 26 is the emitter (bus negative) signal terminal of the lower bridge IGBT, and terminal 27 is the gate signal terminal of the upper bridge IGBT.

[0169] Terminal 30 is a three-phase power terminal, terminal 31 is a busbar+power terminal, and terminal 32 is a busbar-power terminal.

[0170] Terminal 5110 is the base of the upper bridge arm IGBT chip, component 5111 is the emitter of the upper bridge arm IGBT chip, and component 5112 is the collector of the upper bridge arm IGBT chip. Component 5120 is the cathode of the upper bridge arm FRD chip, and component 5121 is the anode of the upper bridge arm FRD chip. Component 5130 is the base of the lower bridge arm IGBT chip, component 5131 is the emitter of the lower bridge arm IGBT chip, and component 5132 is the collector of the lower bridge arm IGBT chip. Component 5140 is the cathode of the lower bridge arm FRD chip, and component 5141 is the anode of the lower bridge arm FRD chip.

[0171] Component 542 is a bridge base copper bar on an insulating substrate, component 544 is an insulating substrate busbar-copper bar, and component 545 is a bridge base copper bar under an insulating substrate. The first coating 103 can also be used as an insulating substrate busbar+copper bar, the second coating 104 can also be used as a three-phase copper bar, and the fourth coating 106 can also be used as a three-phase copper bar.

[0172] It is understandable that the IGBTs, FDRs and other components in the power module G can operate in any possible manner as long as they can achieve power conversion and other functions that can be achieved by other power modules, and the embodiments of the present application do not limit this.

[0173] The following is a description of the motor drive control device and electrical equipment including the power module provided in the present application. The specific implementation process and technical effects are as mentioned above and will not be elaborated in detail below.

[0174] An embodiment of the present application further provides a motor drive control device, which includes a drive unit and at least one power module G provided in any one of the above embodiments.

[0175] The driving unit at least includes a temperature detection unit.

[0176] The first detection terminal of the temperature detection unit is connected to the first electrical end of the thermistor 102 in the power module G, and the second detection terminal of the temperature detection unit is connected to the second electrical end of the thermistor 102 in the power module G.

[0177] Optionally, the number of the driving units is the same as the number of the conversion units Z in the power module G, and each driving unit corresponds to each conversion unit Z one by one.

[0178] Optionally, the driving unit may be any possible driving chip, specifically a driving chip having an analog isolation sampling circuit (ie, the temperature detection unit) integrated therein, which is not limited in the embodiments of the present application.

[0179] For example, see Fig.10 The present application embodiment also provides a possible schematic diagram of the structure of a temperature detection unit. Fig.10 As shown, the temperature detection unit includes a power supply terminal VDD, a positive collection terminal AIN, a negative collection terminal COM, a constant current source I, a comparator C, and an isolation unit Y.

[0180] Optionally, the temperature sampling unit may further include a capacitor C FLT and Zener diode D.

[0181] The positive collecting terminal AIN of the temperature detection unit is used as the above-mentioned second detection terminal to connect the second electrical terminal of the thermistor 102 in the power module G, and the negative collecting terminal COM is used as the above-mentioned first detection terminal to connect the reference ground or the second electrical terminal of the thermistor 102 in the power module G.

[0182] Optionally, the positive phase input terminal of the comparator C is used to input a voltage sampled from a thermistor in the power module G. The negative phase input terminal of the comparator C is used to input a triangular wave signal.

[0183] The other end of the isolation unit Y is connected to a micro control unit (MCU) in the driving unit.

[0184] The specific structure and connection relationship are as follows Fig.10 As shown, the embodiments of the present application are not described in detail here.

[0185] In addition, if the temperature detection unit is integrated inside the driving unit, the power supply terminal VDD may be pin No. 1 of the driving chip for outputting voltage.

[0186] It is worth noting that the working principle is as follows: the current of the constant current source I passes through the positive collection terminal AIN, flows through the thermistor in the power module G, and forms a high-voltage voltage drop on the thermistor (the MCU is in a low-voltage system and cannot directly detect the high-voltage voltage drop). This voltage drop is compared with the triangular wave signal through the comparator C. The comparator C outputs a PWM wave with a variable duty cycle. The high-voltage PWM wave signal on the secondary side of the isolation circuit is transmitted to the core through the low-voltage primary side corresponding to the isolation circuit. Finally, the low-voltage voltage drop of the thermistor is output to the MCU through the primary side of the isolation circuit (the MCU is in a low-voltage system and can directly detect the low-voltage voltage drop). The temperature value can be obtained after detection by the MCU.

[0187] It should be understood that the motor drive control device provided in the embodiment of the present application may also include any other possible devices or modules, such as a power supply module, a voltage stabilization module, a filtering module, etc., and the embodiment of the present application does not limit this.

[0188] An embodiment of the present application further provides an electrical device, which may include a plurality of power modules provided by any of the above embodiments, or may include at least one motor drive control device provided by any of the above embodiments.

[0189] Optionally, the electrical equipment may include any equipment that may require power conversion, such as vehicles, energy storage cabinets, aircraft, computer equipment, etc., which is not limited in this embodiment of the present application.

[0190] The above-mentioned motor drive control device and the above-mentioned electrical equipment include the power module provided in the above-mentioned embodiment, and belong to the same inventive concept. The implementation principles and technical effects of the three are similar and will not be repeated here.

[0191] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0192] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A power module, characterized in that: The power module comprises at least one conversion unit; each of the conversion units comprises at least: an insulating substrate, a plurality of coating layers, a plurality of power devices and at least one thermal sensitive element; Each of the coatings is attached to the surface of the insulating substrate respectively; each of the power devices is arranged on each of the coatings respectively, and each of the power devices outputs voltage or inputs voltage through each of the coatings respectively; The thermosensitive element and at least a portion of the power device are arranged on the same covering layer, so that the heat generated by the power device to be detected is transferred to the thermosensitive element.

2. The power module according to claim 1, characterized in that: At least a portion of the outer shell of the thermal-sensitive element is in contact with at least one of the coatings.

3. The power module according to claim 2, characterized in that: The conversion unit includes a first coating and / or a second coating; The input ends of the power devices belonging to the upper bridge arm in each of the power devices are respectively welded on the first covering layer; the first covering layer is used to be electrically connected to the power devices in the upper bridge arm; The input ends of the power devices belonging to the lower bridge arm in each of the power devices are respectively welded on the second covering layer; the second covering layer is used to be electrically connected to the power devices in the lower bridge arm.

4. The power module according to claim 3, characterized in that: At least one first power device is disposed on the first covering layer; The first electrical end of the thermistor is connected to the first detection terminal of the temperature detection unit through the first coating, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit.

5. The power module according to claim 3, characterized in that: At least one second power device is disposed on the second cladding layer; The first electrical end of the thermistor is connected to the first detection terminal of the temperature detection unit through the second coating, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit.

6. The power module according to claim 1, characterized in that: At least a portion of the housing of the thermal element is in contact with the power device to be detected.

7. The power module according to claim 6, characterized in that: The first electrical end of the thermistor is connected to at least one terminal of the power device, and the second electrical end of the thermistor is connected to the second detection terminal of the temperature detection unit through a first connecting line; wherein the ground terminal of the power device serves as the first detection terminal of the temperature detection unit.

8. The power module according to any one of claims 1 to 7, characterized in that: The thermal element includes at least one of the following: a thermistor, a thermal diode, and a double-sided electrode thermal element; The power device includes at least one of the following: an insulated gate bipolar transistor and a diode.

9. The power module according to any one of claims 1 to 7, characterized in that: The conversion unit further comprises at least one third coating; The third covering layer is attached to the surface of the insulating substrate, and the third covering layer is adjacent to the first covering layer or the second covering layer; The second detection terminal of the temperature detection unit is provided on the third cover layer.

10. A motor drive control device, characterized in that: The motor drive control device comprises a drive unit and at least one power module according to any one of claims 1 to 9; The driving unit at least includes a temperature detection unit; The first detection terminal of the temperature detection unit is connected to the first electrical end of the thermistor in the power module, and the second detection terminal of the temperature detection unit is connected to the second electrical end of the thermistor.

11. An electrical device, characterized in that: The electrical equipment includes a plurality of power modules according to any one of claims 1 to 9, or includes the motor drive control device according to claim 10.

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