Direct current-direct current power supply circuit of hybrid power semiconductor

Abstract

The invention provides a direct current-direct current power supply circuit of a hybrid power semiconductor, and belongs to the technical field of battery charging and discharging. The circuit comprises a voltage reduction module and a resonance module, and the resonance module comprises a first resonance unit and a second resonance unit. The input end of the step-down module is connected with an external power supply, the first output end of the step-down module is connected with the first input end of the first resonance unit, and the second output end of the step-down module is connected with the second input end of the first resonance unit and the first input end of the second resonance unit. A third output end of the voltage reduction module is connected with a second input end of the second resonance unit; the voltage reduction module is used for reducing the power supply voltage to a first target voltage, and the resonance module is used for adjusting the first target voltage to a second target voltage. According to the invention, the switching loss can be reduced, the working efficiency of the DC-DC power supply can be improved, and the high-precision electric energy control and parallel resonant circuit current sharing effects can be realized.

Description

Technical Field

[0001] The present application relates to the technical field of battery charging and discharging, and in particular to a DC-DC power supply circuit of a hybrid power semiconductor. Background Art

[0002] In recent years, with the rapid expansion of the new energy market, the sales of new energy vehicles have also increased day by day. At the same time, the demand for battery component equipment from major power battery manufacturers has also been growing. Driven by the production purpose of energy conservation and emission reduction, various high-efficiency DC-DC power supplies for battery component equipment have been derived.

[0003] In the related technology, metal-oxide-semiconductor (SiMOS) and silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOS) are often used to form a DC-DC power supply of a battery-based component device. Among them, SiC MOS is widely used in the power circuit of a DC-DC power supply due to its advantages such as high temperature resistance, high voltage resistance, high operating frequency, and low on-resistance, so as to improve the reliability and stability of the DC-DC power supply and meet the miniaturization requirements of the DC-DC power supply.

[0004] However, when constructing a DC-DC power supply based on the relevant technology, there is a large switching loss, which leads to an increase in the heat generated by the DC-DC power supply, which in turn makes it difficult to optimize the efficiency of the power supply circuit and cannot avoid the problem of uneven current in the parallel resonant circuit. Summary of the invention

[0005] The purpose of the present application is to provide a hybrid power semiconductor DC-DC power supply circuit, which can reduce switching losses, improve the working efficiency of the DC-DC power supply, and achieve high-precision power control and parallel resonant circuit current sharing.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect of an embodiment of the present application, a hybrid power semiconductor DC-DC power supply circuit is provided, the DC-DC power supply circuit comprising: a step-down module and a resonance module, the resonance module comprising: a first resonance unit and a second resonance unit;

[0008] The input end of the step-down module is connected to the external power supply, the first output end of the step-down module is connected to the first input end of the first resonance unit, the second output end of the step-down module is connected to the second input end of the first resonance unit and the first input end of the second resonance unit respectively, and the third output end of the step-down module is connected to the second input end of the second resonance unit;

[0009] The control end of the step-down module is used to access the first control signal, the control end of the first resonance unit is used to access the second control signal, and the control end of the second resonance unit is used to access the third control signal;

[0010] The step-down module reduces the supply voltage provided by the external power supply to a first target voltage under the action of the first control signal, and the resonance module adjusts the first target voltage to a second target voltage under the action of the second control signal and the third control signal.

[0011] As a possible implementation, the voltage reduction module includes: a first filtering unit, a switch unit, a second filtering unit and a voltage dividing unit;

[0012] The first end of the first filter unit is respectively connected to the positive output end of the external power supply and the first end of the switch unit, the second end of the first filter unit is respectively connected to the negative output end of the external power supply and the third end of the switch unit, the second end of the switch unit is connected to the first end of the second filter unit, and the control end of the switch unit is used to access the first control signal;

[0013] The second end of the second filter unit is connected to the first end of the voltage divider unit, the third end of the second filter unit is connected to the second end of the voltage divider unit, and the fourth end of the second filter unit is connected to the third end of the voltage divider unit and the third end of the switch unit respectively;

[0014] The first end of the voltage divider unit is also connected to the first input end of the first resonance unit, the second end of the voltage divider unit is also connected to the second input end of the first resonance unit and the first input end of the second resonance unit respectively, and the third end of the voltage divider unit is also connected to the second input end of the second resonance unit.

[0015] As a possible implementation, the switch unit includes: a first silicon carbide metal oxide semiconductor transistor and a second silicon carbide metal oxide semiconductor transistor;

[0016] The gate of the first silicon carbide metal oxide semiconductor transistor and the gate of the second silicon carbide metal oxide semiconductor transistor are both used to access the first control signal;

[0017] The drain of the first silicon carbide metal oxide semiconductor transistor is connected to the first end of the first filtering unit, the source of the first silicon carbide metal oxide semiconductor transistor and the drain of the second silicon carbide metal oxide semiconductor transistor are both connected to the first end of the second filtering unit, and the source of the second silicon carbide metal oxide semiconductor transistor is respectively connected to the second end of the first filtering unit and the fourth end of the second filtering unit.

[0018] As a possible implementation, the first filtering unit includes: a first capacitor and a second capacitor;

[0019] One end of the first capacitor is connected to the positive output terminal of the external power supply and the drain of the first silicon carbide metal oxide semiconductor transistor, respectively, the other end of the first capacitor is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the negative output terminal of the external power supply and the source of the second silicon carbide metal oxide semiconductor transistor, respectively.

[0020] As a possible implementation, the second filtering unit includes: a first inductor, a second inductor, a third capacitor and a fourth capacitor;

[0021] One end of the first inductor is connected to the source of the first silicon carbide metal oxide semiconductor transistor and the drain of the second silicon carbide metal oxide semiconductor transistor, the other end of the first inductor is connected to one end of the second inductor, and the other end of the second inductor is connected to one end of the third capacitor and the first end of the voltage divider unit;

[0022] The other end of the third capacitor is respectively connected to one end of the fourth capacitor and the second end of the voltage divider unit, and the other end of the fourth capacitor is respectively connected to the third end of the voltage divider unit and the source of the second silicon carbide metal oxide semiconductor transistor.

[0023] As a possible implementation, the voltage dividing unit includes: a first resistor and a second resistor;

[0024] One end of the first resistor is respectively connected to the second end of the second filtering unit and the first input end of the first resonant unit, the other end of the first resistor is respectively connected to one end of the second resistor, the third end of the second filtering unit, the second input end of the first resonant unit and the first input end of the second resonant unit, and the other end of the second resistor is respectively connected to the fourth end of the second filtering unit and the second input end of the second resonant unit.

[0025] As a possible implementation, the first resonance unit includes: a first primary switch unit, a first transformer, and a first secondary switch unit; the second resonance unit includes: a second primary switch unit, a second transformer, a second secondary switch unit, and a third filtering unit;

[0026] The first end of the first primary switch unit is connected to the first output end of the step-down module, the second end of the first primary switch unit is connected to the first input end of the first transformer, and the third end of the first primary switch unit is respectively connected to the second output end of the step-down module, the first end of the second primary switch unit, and the second input end of the first transformer;

[0027] The second end of the second primary switch unit is connected to the first input end of the second transformer, and the third end of the second primary switch unit is connected to the third output end of the step-down module and the second input end of the second transformer respectively;

[0028] The first output end of the first transformer is connected to the first end of the first secondary switch unit, the second output end of the first transformer is connected to the second output end of the second transformer and the first end of the third filter unit respectively, the third output end of the first transformer is connected to the third end of the first secondary switch unit, and the second end of the first secondary switch unit is connected to the second end of the third filter unit;

[0029] The first output end of the second transformer is connected to the first end of the second secondary switch unit, the third output end of the second transformer is connected to the third end of the second secondary switch unit, and the second end of the second secondary switch unit is connected to the second end of the third filter unit;

[0030] The control end of the first primary switch unit and the control end of the first secondary switch unit are both used to access the second control signal, and the control end of the second primary switch unit and the control end of the second secondary switch unit are both used to access the third control signal.

[0031] As a possible implementation, the first primary switch unit includes: a first gallium nitride metal oxide semiconductor transistor and a second gallium nitride metal oxide semiconductor transistor, and the first secondary switch unit includes: a third gallium nitride metal oxide semiconductor transistor and a fourth gallium nitride metal oxide semiconductor transistor;

[0032] The drain of the first GaN metal oxide semiconductor transistor is connected to the first output terminal of the buck module, the source of the first GaN metal oxide semiconductor transistor is respectively connected to the first input terminal of the first transformer and the drain of the second GaN metal oxide semiconductor transistor, and the source of the second GaN metal oxide semiconductor transistor is respectively connected to the second output terminal of the buck module, the first terminal of the second primary switch unit, and the second input terminal of the first transformer;

[0033] The source of the third GaN metal oxide semiconductor transistor is connected to the first output terminal of the first transformer, the drain of the third GaN metal oxide semiconductor transistor is connected to the drain of the fourth GaN metal oxide semiconductor transistor and the second terminal of the third filtering unit respectively, and the source of the fourth GaN metal oxide semiconductor transistor is connected to the third output terminal of the first transformer;

[0034] The gate of the first GaN metal oxide semiconductor transistor, the gate of the second GaN metal oxide semiconductor transistor, the gate of the third GaN metal oxide semiconductor transistor and the gate of the fourth GaN metal oxide semiconductor transistor are all used to access the second control signal.

[0035] As a possible implementation, the second primary switch unit includes: a fifth gallium nitride metal oxide semiconductor transistor and a sixth gallium nitride metal oxide semiconductor transistor, and the second secondary switch unit includes: a seventh gallium nitride metal oxide semiconductor transistor and an eighth gallium nitride metal oxide semiconductor transistor;

[0036] The drain of the fifth GaN metal oxide semiconductor transistor is respectively connected to the second output end of the step-down module, the source of the second GaN metal oxide semiconductor transistor and the second input end of the first transformer, the source of the fifth GaN metal oxide semiconductor transistor is respectively connected to the first input end of the second transformer and the drain of the sixth GaN metal oxide semiconductor transistor, and the source of the sixth GaN metal oxide semiconductor transistor is respectively connected to the third output end of the step-down module and the second input end of the second transformer;

[0037] The source of the seventh GaN metal oxide semiconductor transistor is connected to the first output terminal of the second transformer, the drain of the seventh GaN metal oxide semiconductor transistor is respectively connected to the drain of the eighth GaN metal oxide semiconductor transistor and the second end of the third filtering unit, and the source of the eighth GaN metal oxide semiconductor transistor is connected to the third output terminal of the second transformer;

[0038] The gate of the fifth GaN metal oxide semiconductor transistor, the gate of the sixth GaN metal oxide semiconductor transistor, the gate of the seventh GaN metal oxide semiconductor transistor and the gate of the eighth GaN metal oxide semiconductor transistor are all used to access the third control signal.

[0039] As a possible implementation, the third filtering unit includes: a fifth capacitor, a sixth capacitor and a third resistor;

[0040] One end of the fifth capacitor, one end of the sixth capacitor, and one end of the third resistor are all connected to the second output end of the first transformer and the second output end of the second transformer, and the other end of the fifth capacitor, the other end of the sixth capacitor, and the other end of the third resistor are all connected to the second end of the first secondary switch unit and the second end of the second secondary switch unit.

[0041] According to a second aspect of the embodiments of the present application, a DC-DC power supply is provided. The DC-DC power supply includes the hybrid power semiconductor DC-DC power supply circuit described in the first aspect.

[0042] The beneficial effects of the embodiments of the present application include:

[0043] An embodiment of the present application provides a hybrid power semiconductor DC-DC power supply circuit, which implements the DC-DC power supply circuit through a two-stage circuit topology of a buck module and a resonant module, wherein the resonant module includes: a first resonant unit and a second resonant unit, the buck module is connected to a power supply voltage provided by an external power supply via an input end, and the buck module reduces the power supply voltage provided by the external power supply to a first target voltage under the action of a first control signal; the first input end of the first resonant unit is connected to the first output end of the buck module, the second input end of the first resonant unit is connected to the second output end of the buck module, the first input end of the second resonant unit is connected to the second output end of the buck module, the second input end of the second resonant unit is connected to the third output end of the buck module, the first resonant unit is connected in parallel with the second resonant unit, and the first resonant unit and the second resonant unit are connected in parallel to the first target voltage output by the buck module; the first resonant unit is controlled by the second control signal and the second resonant unit is controlled by the third control signal to convert the first target voltage into a constant second target voltage and output it. In addition, the first resonant unit and the second resonant unit adjust the first target voltage with high precision based on the transformation ratio of the internal transformer, so that the DC-DC power supply circuit can output a constant high-precision voltage, which can effectively balance the resonant current of the subsequent parallel resonant unit. The high linearity and high voltage regulation bandwidth of the previous step-down module can make up for the defects of the nonlinearity, low voltage regulation bandwidth and difficulty in voltage control of the subsequent resonant module. In this way, the switching loss can be reduced, the working efficiency of the DC-DC power supply can be improved, and the effect of high-precision power control and current sharing of the parallel resonant circuit can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0045] Figure 1 A schematic diagram of the structure of a hybrid power semiconductor DC-DC power supply circuit provided in an embodiment of the present application;

[0046] Figure 2 A schematic diagram of the structure of a voltage reduction module provided in an embodiment of the present application;

[0047] Figure 3 A circuit diagram of a step-down module provided in an embodiment of the present application;

[0048] Figure 4 A schematic diagram of the structure of a resonance module provided in an embodiment of the present application;

[0049] Figure 5 A circuit diagram of a resonance module provided in an embodiment of the present application;

[0050] Figure 6 A simulation circuit diagram of a hybrid power semiconductor DC-DC power supply circuit provided in an embodiment of the present application;

[0051] Figure 7 An output power simulation waveform diagram of a hybrid power semiconductor DC-DC power supply circuit provided in an embodiment of the present application;

[0052] Figure 8 A resonance cavity current simulation waveform diagram of a resonance module provided in an embodiment of the present application;

[0053] Fig. 9 A power simulation waveform diagram of a primary switch unit in a resonance module provided in an embodiment of the present application;

[0054] Fig.10 A control signal simulation waveform diagram of a control terminal of a resonance module provided in an embodiment of the present application;

[0055] Fig.11 A schematic diagram of the structure of a DC-DC power supply provided in an embodiment of the present application.

[0056] Description of the drawings: 10: DC-DC power supply circuit; 101: buck module; 1011: first filter unit; 111: first capacitor; 112: second capacitor; 1012: switch unit; 121: first silicon carbide metal oxide semiconductor transistor; 122: second silicon carbide metal oxide semiconductor transistor; 1013: second filter unit; 131: first inductor; 132: second inductor; 133: third capacitor; 134: fourth capacitor; 1014: voltage divider unit; 141: first resistor; 142: second resistor; 102: resonant module; 1021: first resonant unit; 211: first primary switch unit; 2111: first gallium nitride metal oxide semiconductor transistor; 2112: second gallium nitride metal oxide semiconductor Transistor; 212: first transformer; 213: first secondary switch unit; 2131: third GaN metal oxide semiconductor transistor; 2132: fourth GaN metal oxide semiconductor transistor; 1022: second resonance unit; 221: second primary switch unit; 2211: fifth GaN metal oxide semiconductor transistor; 2212: sixth GaN metal oxide semiconductor transistor; 222: second transformer; 223: second secondary switch unit; 2231: seventh GaN metal oxide semiconductor transistor; 2232: eighth GaN metal oxide semiconductor transistor; 224: third filtering unit; 2241: fifth capacitor; 2242: sixth capacitor; 2243: third resistor; 20: DC-DC power supply. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0058] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0059] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0060] In the description of the present application, it should be noted that the terms "first", "second", "third", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0061] At present, DC-DC power supplies of battery-based devices are often composed of metal oxide semiconductor transistors and silicon carbide metal oxide semiconductor transistors. The main purpose is to improve the reliability and stability of DC-DC power supplies and meet the miniaturization requirements of DC-DC power supplies by utilizing the high temperature resistance, high voltage resistance, high operating frequency, and low on-resistance of silicon carbide metal oxide semiconductor transistors. However, this solution has large switching losses, which leads to increased heat generation of the DC-DC power supply, which in turn makes it difficult to optimize the efficiency of the power supply circuit, and cannot avoid the problem of uneven current in the parallel resonant circuit.

[0062] To this end, the embodiment of the present application provides a DC-DC power supply circuit of a hybrid power semiconductor, which is composed of a DC-DC power supply circuit through a buck module and a resonant circuit, wherein the input end of the buck module is used to access the power supply voltage of an external power supply, and the buck module reduces the power supply voltage provided by the external power supply to a first target voltage under the action of a first control signal; the output end of the buck module is connected to the input end of the resonant module, and the resonant module adjusts the first target voltage output by the buck module to a second target voltage under the action of a second control signal and a third control signal. The buck module is mainly implemented by a BUCK circuit, and the resonant module is mainly formed by two resonant circuits in parallel. The BUCK circuit can effectively solve the problem of uneven current in the parallel resonant circuit, and the BUCK circuit and the parallel resonant circuit can achieve fine adjustment of the power supply voltage provided by the external power supply. In this way, it is possible to reduce switching losses, improve the working efficiency of the DC-DC power supply, and achieve the effects of high-precision power control and parallel resonant circuit current sharing.

[0063] The hybrid power semiconductor DC-DC power supply circuit and the DC-DC power supply provided in the embodiments of the present application are explained in detail below with reference to the accompanying drawings.

[0064] Figure 1 A schematic diagram of a hybrid power semiconductor DC-DC power supply circuit provided in this application, see Figure 1 An embodiment of the present application provides a DC-DC power supply circuit 10 of a combined power semiconductor. The DC-DC power supply circuit 10 includes: a step-down module 101 and a resonance module 102. The resonance module 102 includes: a first resonance unit 1021 and a second resonance unit 1022.

[0065] The input end of the step-down module 101 is connected to an external power supply, the first output end of the step-down module 101 is connected to the first input end of the first resonance unit 1021, the second output end of the step-down module 101 is respectively connected to the second input end of the first resonance unit 1021 and the first input end of the second resonance unit 1022, and the third output end of the step-down module 101 is connected to the second input end of the second resonance unit 1022.

[0066] Optionally, the step-down module 101 can be implemented by a step-down circuit, and the step-down module 101 can be specifically implemented by a BUCK circuit. The step-down module 101 is mainly used to reduce the supply voltage provided by an external power supply to a voltage within a specified range. The external power supply is specifically implemented by a DC power supply. The step-down module 101 can convert the voltage provided by the DC power supply into a DC voltage within a specified range, such as reducing the 700V voltage input by the DC power supply to a voltage of 0V-340V through a BUCK circuit, etc. This application does not make specific limitations on this.

[0067] Optionally, the input end of the step-down module 101 is connected to an external power supply, and the step-down module 101 can obtain the power supply voltage provided by the external power supply via the input end, the first resonance unit 1021 obtains the intermediate bus output voltage via the first output end and the second output end of the step-down module 101, and the second resonance unit 1022 obtains the intermediate bus output voltage via the second output end and the third output end of the step-down module 101.

[0068] Optionally, the first resonance unit 1021 and the second resonance unit 1022 can both be implemented by a resonance circuit, and the first resonance unit 1021 and the second resonance unit 1022 can perform high-precision regulation on the intermediate bus output voltage to meet the high-precision regulation of the DC voltage provided by the DC-DC power supply circuit 10 to the external power supply.

[0069] In addition, the DC-DC power supply circuit 10 can also achieve high-precision regulation of the DC current provided by the DC power supply through the front-stage BUCK circuit and the two rear-stage LLC circuits connected in parallel. The BUCK circuit is a step-down circuit, and the LLC circuit is used to indicate a resonant circuit.

[0070] Optionally, the step-down module 101 can reduce a higher level of DC voltage provided by an external power source to a lower level of DC voltage, and the first resonance unit 1021 and the second resonance unit 1022 connected in parallel at the subsequent stage can achieve stable regulation of the output voltage of the intermediate bus.

[0071] It is worth noting that there is at least one switching device in the buck module 101. By controlling the on-time ratio of the switching device in the buck module 101 and the off-time ratio, the step-down ratio of the DC voltage provided by the buck module 101 to the external power supply can be modulated; the first resonance unit 1021 and the second resonance unit 1022 have a transformer and a plurality of switching devices. The switching frequency of the switching device in the resonance circuit is controlled to achieve a constant output of the DC-DC power supply circuit 10, and the transformation ratio of the transformer in the resonance circuit is set to achieve high-precision regulation of the output voltage of the intermediate bus.

[0072] The control end of the step-down module 101 is used to access the first control signal, the control end of the first resonance unit 1021 is used to access the second control signal, and the control end of the second resonance unit 1022 is used to access the third control signal.

[0073] Optionally, the first control signal refers to a pulse control signal applied to the control end of the buck module 101. The first control signal can be generated by a first pulse generating circuit. The first pulse generating circuit can be integrated outside the DC-DC power supply 20 or inside the DC-DC power supply 20. This application does not specifically limit this. It is worth noting that the first pulse generating circuit can be implemented by a PWM controller. The first pulse generating circuit is mainly used to generate a pulse width modulation signal, which is mainly used to control the switching speed and switching frequency in the buck module 101 to achieve precise bucking of the buck module 101.

[0074] Optionally, the second control signal refers to a pulse control signal applied to the control end of the first resonance unit 1021 in the resonance module 102, and the third control signal refers to a pulse control signal applied to the control end of the second resonance unit 1022 in the resonance module 102. The second control signal can be generated by a second pulse generating circuit, and the third control signal can be generated by a third pulse generating circuit. The second pulse generating circuit and the third pulse generating circuit can be integrated outside the DC-DC power supply 20 or inside the DC-DC power supply 20, and the present application does not make any specific limitations on this.

[0075] It is worth noting that the second pulse generating circuit and the third pulse generating circuit can be implemented by a PWM controller. The second pulse generating circuit and the third pulse generating circuit are mainly used to generate pulse width modulation signals, which are mainly used to control the switching frequency of each switching device in the resonance module 102 to achieve a stable output of the DC-DC power supply circuit 10.

[0076] Optionally, although the first pulse generating circuit, the second pulse generating circuit and the third pulse generating circuit are all used to generate pulse width modulation signals to control the switching frequency of the switching device, the circuit structures of the first pulse generating circuit, the second pulse generating circuit and the third pulse generating circuit are not necessarily the same, which mainly depends on multiple factors such as the model and function of the switching devices in the BUCK circuit and the LLC circuit. The present application does not make any specific limitations on this.

[0077] The step-down module 101 reduces the supply voltage provided by the external power supply to a first target voltage under the action of the first control signal, and the resonance module 102 adjusts the first target voltage to a second target voltage under the action of the second control signal and the third control signal.

[0078] Optionally, the first target voltage refers to the voltage obtained after the step-down module 101 steps down the power supply voltage provided by the external power supply. The user can change the switching speed of each switch device in the step-down module 101 by adjusting the first control signal output by the first pulse generating circuit, thereby adjusting the value range of the first target voltage. Among them, the first control signal is mainly used to control the time ratio of the on time and the off time of each switch device in the step-down module 101, so that the step-down module 101 steps down the DC voltage provided by the external power supply according to a certain ratio under the action of the first control signal. For example, the step-down module 101 reduces the 700V DC voltage provided by the external power supply to a voltage of 0V-340V under the action of the first control signal, and the first target voltage is a voltage value of 0V-340V.

[0079] Optionally, the second target voltage refers to the voltage output after the first resonance unit 1021 and the second resonance unit 1022 connected in parallel in the resonance module 102 jointly perform high-precision adjustment on the first target voltage. The user can set the transformation ratio of the transformer in the first resonance unit 1021 and the second resonance unit 1022 to achieve fine adjustment of the first target voltage output by the step-down module 101 by the resonance module 102. The user can change the switching frequency of each switching device in the first resonance unit 1021 in the resonance module 102 by adjusting the second control signal output by the second pulse generating circuit, and change the switching frequency of each switching device in the second resonance unit 1022 in the resonance module 102 by adjusting the third control signal output by the third pulse generating circuit, so that the DC-DC power supply circuit 10 outputs a stable second target voltage. For example, the resonance module 102 adjusts the first target voltage 0V-340V to 0V-5V under the action of the transformer in the first resonance unit 1021 and the second resonance unit 1022, and the second target voltage is a voltage value between 0V and 5V. The resonance module 102 provides a stable 0V-5V voltage for the DC-DC power supply 20 under the action of the second control signal and the third control signal.

[0080] In an embodiment of the present application, a DC-DC power supply circuit is realized by a two-stage circuit topology of a buck module and a resonance module, wherein the resonance module includes: a first resonance unit and a second resonance unit, the buck module is connected to a power supply voltage provided by an external power supply via an input end, and the buck module reduces the power supply voltage provided by the external power supply to a first target voltage under the action of a first control signal; the first input end of the first resonance unit is connected to the first output end of the buck module, the second input end of the first resonance unit is connected to the second output end of the buck module, the first input end of the second resonance unit is connected to the second output end of the buck module, the second input end of the second resonance unit is connected to the third output end of the buck module, the first resonance unit is connected to the second resonance unit in parallel, and the first resonance unit and the second resonance unit are connected in parallel to the first target voltage output by the buck module; the first resonance unit is controlled by the second control signal, and the second resonance unit is controlled by the third control signal to convert the first target voltage into a constant second target voltage and output it. In addition, the first resonant unit and the second resonant unit adjust the first target voltage with high precision based on the transformation ratio of the internal transformer, so that the DC-DC power supply circuit can output a constant high-precision voltage, which can effectively balance the resonant current of the subsequent parallel resonant unit. The high linearity and high voltage regulation bandwidth of the previous step-down module can make up for the defects of the nonlinearity, low voltage regulation bandwidth and difficulty in voltage control of the subsequent resonant module. In this way, the switching loss can be reduced, the working efficiency of the DC-DC power supply can be improved, and the effect of high-precision power control and current sharing of the parallel resonant circuit can be achieved.

[0081] In an optional embodiment, see Figure 2 The buck module 101 in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first filtering unit 1011, a switch unit 1012, a second filtering unit 1013 and a voltage dividing unit 1014.

[0082] The first end of the first filter unit 1011 is respectively connected to the positive output end of the external power supply and the first end of the switch unit 1012, the second end of the first filter unit 1011 is respectively connected to the negative output end of the external power supply and the third end of the switch unit 1012, the second end of the switch unit 1012 is connected to the first end of the second filter unit 1013, and the control end of the switch unit 1012 is used to access the first control signal.

[0083] Optionally, the first filter unit 1011 is connected to the power supply voltage provided by the external power supply via the first end and the second end, and the first filter unit 1011 is used to filter out noise in the power supply voltage provided by the external power supply, such as filtering out voltage peaks, white noise, etc. in the power supply voltage provided by the external power supply. In addition, the first filter unit 1011 can also act as an energy storage unit, and the power supply voltage provided by the external power supply can be stored in the first filter unit 1011 to provide a stable power supply voltage for the subsequent circuit, which is not specifically limited in the present application.

[0084] Optionally, the supply voltage provided by the external power supply is filtered by the first filtering unit 1011 and then input into the switch unit 1012. The switch unit 1012 adjusts the ratio of the on time to the off time under the action of the first control signal to achieve voltage reduction of the supply voltage.

[0085] Optionally, the voltage after the step-down processing by the switch unit 1012 is input into the second filtering unit 1013, and the second filtering unit 1013 can perform noise reduction on the stepped-down voltage to eliminate high-frequency noise in the stepped-down voltage and improve the stability of the stepped-down voltage.

[0086] The second end of the second filter unit 1013 is connected to the first end of the voltage divider unit 1014, the third end of the second filter unit 1013 is connected to the second end of the voltage divider unit 1014, and the fourth end of the second filter unit 1013 is respectively connected to the third end of the voltage divider unit 1014 and the third end of the switch unit 1012.

[0087] Optionally, the second filtering unit 1013 inputs the voltage after the noise reduction process into the voltage dividing unit 1014 , and the voltage dividing unit 1014 divides the voltage output by the second filtering unit 1013 to obtain the first target voltage output by the voltage reduction module 101 .

[0088] The first end of the voltage divider unit 1014 is also connected to the first input end of the first resonance unit 1021, the second end of the voltage divider unit 1014 is also connected to the second input end of the first resonance unit 1021 and the first input end of the second resonance unit 1022 respectively, and the third end of the voltage divider unit 1014 is also connected to the second input end of the second resonance unit 1022.

[0089] Optionally, the first resonant unit 1021 and the second resonant unit 1022 obtain the first target voltage after the voltage reduction processing by the voltage reduction module 101 via the voltage divider unit 1014 , and the first target voltage is also the output voltage of the intermediate bus of the DC-DC power supply circuit 10 .

[0090] In an optional embodiment, see Figure 3The switch unit 1012 in the buck module 101 in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first silicon carbide metal oxide semiconductor transistor 121 and a second silicon carbide metal oxide semiconductor transistor 122 .

[0091] Optionally, the switch unit 1012 in the step-down module 101 is implemented by two silicon carbide metal oxide semiconductor transistors, so that the switch unit 1012 has the advantages of high operating frequency and low on-resistance, and can also reduce the volume and weight of the step-down module 101, further improving the reliability of the DC-DC power supply circuit 10 and the stability of temperature control.

[0092] The gate of the first SiC MOS transistor 121 and the gate of the second SiC MOS transistor 122 are both used to access the first control signal.

[0093] Optionally, the gate of the first silicon carbide metal oxide semiconductor transistor 121 and the gate of the second silicon carbide metal oxide semiconductor transistor 122 are both used to access the first control signal generated by the first pulse generating circuit, and the first silicon carbide metal oxide semiconductor transistor 121 and the second silicon carbide metal oxide semiconductor transistor 122 are both turned on or off under the action of the first control signal.

[0094] Optionally, the first control signal can control the time ratio between the on time and the off time of the first silicon carbide metal oxide semiconductor transistor 121, and the first control signal can also control the time ratio between the on time and the off time of the second silicon carbide metal oxide semiconductor transistor 122 to control the step-down ratio of the step-down module 101.

[0095] The drain of the first silicon carbide metal oxide semiconductor transistor 121 is connected to the first end of the first filtering unit 1011, the source of the first silicon carbide metal oxide semiconductor transistor 121 and the drain of the second silicon carbide metal oxide semiconductor transistor 122 are both connected to the first end of the second filtering unit 1013, and the source of the second silicon carbide metal oxide semiconductor transistor 122 is respectively connected to the second end of the first filtering unit 1011 and the fourth end of the second filtering unit 1013.

[0096] Optionally, when the first silicon carbide metal oxide semiconductor transistor 121 and the second silicon carbide metal oxide semiconductor transistor 122 are both turned on, the second filtering unit 1013 obtains the stepped-down supply voltage via the source of the first silicon carbide metal oxide semiconductor transistor 121 and the drain of the second silicon carbide metal oxide semiconductor transistor 122 .

[0097] In an optional embodiment, see Figure 3The first filtering unit 1011 in the step-down module 101 in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first capacitor 111 and a second capacitor 112 .

[0098] One end of the first capacitor 111 is connected to the positive output end of the external power supply and the drain of the first silicon carbide metal oxide semiconductor transistor 121, respectively; the other end of the first capacitor 111 is connected to one end of the second capacitor 112, and the other end of the second capacitor 112 is connected to the negative output end of the external power supply and the source of the second silicon carbide metal oxide semiconductor transistor 122, respectively.

[0099] Optionally, the first capacitor 111 and the second capacitor 112 are connected in series, and the first filter unit 1011 composed of the first capacitor 111 and the second capacitor 112 is connected in parallel with the switch unit 1012 in the step-down module 101. The first capacitor 111 and the second capacitor 112 can improve the line transmission capacity of the main circuit of the DC-DC power supply circuit 10, and can also absorb peak voltage.

[0100] Optionally, the first capacitor 111 and the second capacitor 112 can be charged when the switch device in the switch unit 1012 is turned on, and discharged when the switch device in the switch unit 1012 is turned off, so as to reduce the voltage ripple in the power supply voltage provided by the external power supply. In addition, the first capacitor 111 and the second capacitor 112 can also be used as input capacitors of the buck module 101, and can provide transient current for the buck module 101 to ensure the stability of the output voltage of the buck module.

[0101] In an optional embodiment, see Figure 3 The second filtering unit 1013 in the step-down module 101 in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first inductor 131, a second inductor 132, a third capacitor 133 and a fourth capacitor 134.

[0102] One end of the first inductor 131 is connected to the source of the first silicon carbide metal oxide semiconductor transistor 121 and the drain of the second silicon carbide metal oxide semiconductor transistor 122, respectively. The other end of the first inductor 131 is connected to one end of the second inductor 132. The other end of the second inductor 132 is connected to one end of the third capacitor 133 and the first end of the voltage divider unit 1014, respectively.

[0103] Optionally, when each switching device in the switch unit 1012 in the buck module 101 is turned on, the first inductor 131 and the second inductor 132 are magnetized, and the current flowing through the first inductor 131 and the second inductor 132 increases linearly, and the third capacitor 133 and the fourth capacitor 134 are charged through the first inductor 131 and the second inductor 132, and the first inductor 131 and the second inductor 132 convert electrical energy into magnetic field energy for storage.

[0104] In addition, the first inductor 131 and the second inductor 132 can further step down the stepped-down supply voltage output by the switch unit 1012. The first inductor 131 and the second inductor 132 convert the electric energy output by the switch unit 1012 into corresponding magnetic field energy for storage based on their own inductance values.

[0105] The other end of the third capacitor 133 is connected to one end of the fourth capacitor 134 and the second end of the voltage divider 1014 . The other end of the fourth capacitor 134 is connected to the third end of the voltage divider 1014 and the source of the second SiC MOS transistor 122 .

[0106] Optionally, the third capacitor 133 and the fourth capacitor 134 may further filter the voltage after the voltage is stepped down by the first inductor 131 and the second inductor 132 to ensure a stable output of the step-down module 101 .

[0107] In an optional embodiment, see Figure 3 The voltage dividing unit 1014 in the step-down module 101 in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first resistor 141 and a second resistor 142 .

[0108] One end of the first resistor 141 is respectively connected to the second end of the second filtering unit 1013 and the first input end of the first resonance unit 1021, the other end of the first resistor 141 is respectively connected to one end of the second resistor 142, the third end of the second filtering unit 1013, the second input end of the first resonance unit 1021 and the first input end of the second resonance unit 1022, the other end of the second resistor 142 is respectively connected to the fourth end of the second filtering unit 1013 and the second input end of the second resonance unit 1022.

[0109] Optionally, the first resistor 141 and the second resistor 142 can further divide the stepped-down voltage output by the second filtering unit 1013 , and the voltage obtained by dividing the voltage by the first resistor 141 and the second resistor 142 is the first target voltage.

[0110] Optionally, the first resonant unit 1021 obtains the first target voltage after the step-down processing by the step-down module 101 via the terminal voltage of the first resistor 141 , and the second resonant unit 1022 obtains the first target voltage after the step-down processing by the step-down module 101 via the terminal voltage of the second resistor 142 .

[0111] In an optional embodiment, see Figure 4 The first resonance unit 1021 in the resonance module 102 of the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a first primary switch unit 211, a first transformer 212, and a first secondary switch unit 213, and the second resonance unit 1022 includes: a second primary switch unit 221, a second transformer 222, a second secondary switch unit 223 and a third filter unit 224.

[0112] The first end of the first primary switch unit 211 is connected to the first output end of the buck module 101, the second end of the first primary switch unit 211 is connected to the first input end of the first transformer 212, and the third end of the first primary switch unit 211 is respectively connected to the second output end of the buck module 101, the first end of the second primary switch unit 221 and the second input end of the first transformer 212.

[0113] Optionally, the first resonant unit 1021 is connected to the first target voltage output by the buck module 101 via the first end and the third end of the first primary switch unit 211, that is, the first resonant unit 1021 obtains the output voltage of the intermediate bus via the first end and the third end of the first primary switch unit 211.

[0114] Optionally, the first primary switch unit 211 inputs the received voltage into the primary side of the first transformer 212 via the second terminal and the third terminal, and the first transformer 212 steps down the voltage received at the primary side based on its own transformation ratio.

[0115] The second end of the second primary switch unit 221 is connected to the first input end of the second transformer 222 , and the third end of the second primary switch unit 221 is connected to the third output end of the step-down module 101 and the second input end of the second transformer 222 .

[0116] Optionally, the second resonant unit 1022 is connected to the first target voltage output by the buck module 101 via the first end and the third end of the second primary switch unit 221, that is, the second resonant unit 1022 obtains the output voltage of the intermediate bus via the first end and the third end of the second primary switch unit 221.

[0117] Optionally, the second primary switch unit 221 inputs the received voltage into the primary side of the second transformer 222 via the second terminal and the third terminal, and the second transformer 222 steps down the voltage received at the primary side based on its own transformation ratio.

[0118] It is worth noting that the first input terminal and the second input terminal of the first transformer 212 are the primary input terminals of the first transformer 212, and the first output terminal, the second output terminal and the third output terminal of the first transformer 212 are all secondary output terminals of the first transformer 212; the first input terminal and the second input terminal of the second transformer 222 are the primary input terminals of the second transformer 222, and the first output terminal, the second output terminal and the third output terminal of the second transformer 222 are all secondary output terminals of the second transformer 222.

[0119] Optionally, the first primary switch unit 211 serves as the power switch unit of the first resonance unit 1021, and the first primary switch unit 211 is used to control the power input of the first resonance unit 1021; the second primary switch unit 221 serves as the power switch unit of the second resonance unit 1022, and the second primary switch unit 221 is used to control the power input of the second resonance unit 1022.

[0120] The first output end of the first transformer 212 is connected to the first end of the first secondary switch unit 213, the second output end of the first transformer 212 is respectively connected to the second output end of the second transformer 222 and the first end of the third filter unit 224, the third output end of the first transformer 212 is connected to the third end of the first secondary switch unit 213, and the second end of the first secondary switch unit 213 is connected to the second end of the third filter unit 224.

[0121] The first output end of the second transformer 222 is connected to the first end of the second secondary switch unit 223 , the third output end of the second transformer 222 is connected to the third end of the second secondary switch unit 223 , and the second end of the second secondary switch unit 223 is connected to the second end of the third filter unit 224 .

[0122] The control end of the first primary switch unit 211 and the control end of the first secondary switch unit 213 are both used to access the second control signal, and the control end of the second primary switch unit 221 and the control end of the second secondary switch unit 223 are both used to access the third control signal.

[0123] In an optional embodiment, see Figure 5In the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application, the first primary switch unit 211 in the first resonance unit 1021 includes: a first GaN metal oxide semiconductor transistor 2111 and a second GaN metal oxide semiconductor transistor 2112, and the first secondary switch unit 213 includes: a third GaN metal oxide semiconductor transistor 2131 and a fourth GaN metal oxide semiconductor transistor 2132.

[0124] Optionally, based on the advantages of GaN metal oxide semiconductor transistors such as fast switching speed, small conduction loss, low on-resistance, small weight and small volume, the first primary switch unit 211 and the first secondary switch unit 213 are constructed.

[0125] The drain of the first GaN metal oxide semiconductor transistor 2111 is connected to the first output end of the buck module 101, the source of the first GaN metal oxide semiconductor transistor 2111 is respectively connected to the first input end of the first transformer 212 and the drain of the second GaN metal oxide semiconductor transistor 2112, and the source of the second GaN metal oxide semiconductor transistor 2112 is respectively connected to the second output end of the buck module 101, the first end of the second primary switch unit 221, and the second input end of the first transformer 212.

[0126] The source of the third GaN MOS transistor 2131 is connected to the first output terminal of the first transformer 212, the drain of the third GaN MOS transistor 2131 is respectively connected to the drain of the fourth GaN MOS transistor 2132 and the second terminal of the third filtering unit 224, and the source of the fourth GaN MOS transistor 2132 is connected to the third output terminal of the first transformer 212.

[0127] The gate of the first GaN MOS transistor 2111 , the gate of the second GaN MOS transistor 2112 , the gate of the third GaN MOS transistor 2131 , and the gate of the fourth GaN MOS transistor 2132 are all used to access the second control signal.

[0128] Optionally, the second control signal is used to control the switching frequencies of the first GaN MOS transistor 2111 , the second GaN MOS transistor 2112 , the third GaN MOS transistor 2131 , and the fourth GaN MOS transistor 2132 .

[0129] It is worth noting that the second control signal is generated by the second pulse generating circuit, but the second control signal applied by the second pulse generating circuit to the gate of the first GaN metal oxide semiconductor transistor 2111, the gate of the second GaN metal oxide semiconductor transistor 2112, the gate of the third GaN metal oxide semiconductor transistor 2131 and the gate of the fourth GaN metal oxide semiconductor transistor 2132 may be the same or different, that is, the switching frequency and start and stop time of each switching device in the first resonant unit 1021 are not necessarily the same, and the present application does not make specific limitations on this.

[0130] In an optional embodiment, see Figure 5 In the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application, the second primary switch unit 221 in the second resonance unit 1022 includes: a fifth GaN metal oxide semiconductor transistor 2211 and a sixth GaN metal oxide semiconductor transistor 2212, and the second secondary switch unit 223 includes: a seventh GaN metal oxide semiconductor transistor 2231 and an eighth GaN metal oxide semiconductor transistor 2232.

[0131] The drain of the fifth GaN metal oxide semiconductor transistor 2211 is respectively connected to the second output terminal of the step-down module 101, the source of the second GaN metal oxide semiconductor transistor 2112 and the second input terminal of the first transformer 212, the source of the fifth GaN metal oxide semiconductor transistor 2211 is respectively connected to the first input terminal of the second transformer 222 and the drain of the sixth GaN metal oxide semiconductor transistor 2212, and the source of the sixth GaN metal oxide semiconductor transistor 2212 is respectively connected to the third output terminal of the step-down module 101 and the second input terminal of the second transformer 222.

[0132] The source of the seventh GaN metal oxide semiconductor transistor 2231 is connected to the first output terminal of the second transformer 222, the drain of the seventh GaN metal oxide semiconductor transistor 2231 is respectively connected to the drain of the eighth GaN metal oxide semiconductor transistor 2232 and the second end of the third filtering unit 224, and the source of the eighth GaN metal oxide semiconductor transistor 2232 is connected to the third output terminal of the second transformer 222.

[0133] The gate of the fifth GaN MOS transistor 2211 , the gate of the sixth GaN MOS transistor 2212 , the gate of the seventh GaN MOS transistor 2231 , and the gate of the eighth GaN MOS transistor 2232 are all used to access the third control signal.

[0134] Optionally, the third control signal is used to control the switching frequencies of the fifth GaN MOS transistor 2211 , the sixth GaN MOS transistor 2212 , the seventh GaN MOS transistor 2231 , and the eighth GaN MOS transistor 2232 .

[0135] It is worth noting that the third control signal is generated by the third pulse generating circuit, but the third control signal applied by the third pulse generating circuit to the gate of the fifth GaN metal oxide semiconductor transistor 2211, the gate of the sixth GaN metal oxide semiconductor transistor 2212, the gate of the seventh GaN metal oxide semiconductor transistor 2231 and the gate of the eighth GaN metal oxide semiconductor transistor 2232 may be the same or different, that is, the switching frequency and start and stop time of each switching device in the second resonance unit 1022 are not necessarily the same, and the present application does not make specific limitations on this.

[0136] In an optional embodiment, see Figure 5 The third filtering unit 224 in the second resonance unit 1022 of the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application includes: a fifth capacitor 2241 , a sixth capacitor 2242 and a third resistor 2243 .

[0137] One end of the fifth capacitor 2241, one end of the sixth capacitor 2242, and one end of the third resistor 2243 are all connected to the second output end of the first transformer 212 and the second output end of the second transformer 222, and the other end of the fifth capacitor 2241, the other end of the sixth capacitor 2242, and the other end of the third resistor 2243 are all connected to the second end of the first secondary side switch unit 213 and the second end of the second secondary side switch unit 223.

[0138] Optionally, the fifth capacitor 2241, the sixth capacitor 2242 and the third resistor 2243 are all used to filter the voltage output by the resonance module 102, and after noise reduction filtering by the fifth capacitor 2241, the sixth capacitor 2242 and the third resistor 2243, a stable second target voltage can be provided for the DC-DC power supply 20.

[0139] In an optional implementation, Figure 6 For a simulation circuit diagram of a hybrid power semiconductor DC-DC power supply circuit provided in this application, see Figure 6, the first pulse generating circuit in the embodiment of the present application can be composed of an operational amplifier and a first pulse signal generating unit, the positive input terminal of the operational amplifier is connected to the first end of the voltage divider unit 1014, the negative input terminal of the operational amplifier is connected to the third end of the voltage divider unit 1014, the output terminal of the operational amplifier is connected to the negative input terminal of the first pulse signal generating unit, the positive input terminal of the first pulse signal generating unit is used to connect to an external power supply, and the output terminal of the first pulse signal generating unit is connected to the control terminal of the switch unit 1012; the output terminals of the second pulse generating circuit provided in the embodiment of the present application are respectively connected to the first resonant unit The first GaN metal oxide semiconductor transistor 2111, the second GaN metal oxide semiconductor transistor 2112, the third GaN metal oxide semiconductor transistor 2131 and the fourth GaN metal oxide semiconductor transistor 2132 in the element 1021 are connected, and the output end of the third pulse generating circuit is respectively connected to the fifth GaN metal oxide semiconductor transistor 2211, the sixth GaN metal oxide semiconductor transistor 2212, the seventh GaN metal oxide semiconductor transistor 2231 and the eighth GaN metal oxide semiconductor transistor 2232 in the second resonant unit 1022. Among them, the switch component in the resonant unit, the capacitive electronic device and the inductive electronic device together form a resonant cavity, and the precise current regulation is achieved by adjusting the resonant cavity current, and the specific implementation process is not repeated in this application.

[0140] It is worth noting that the internal structure of the second pulse generating circuit is the same as that of the third pulse generating circuit, but the second control signal generated by the second pulse generating circuit is not necessarily the same as the third control signal generated by the third pulse generating circuit, and this application does not make specific limitations on this.

[0141] in addition, Figure 6 This is only an example and does not mean that the control signal applied in the embodiments of the present application must be provided by the pulse generating circuit shown in the figure. The present application does not make any specific limitation on this.

[0142] Figure 7 This is a simulation waveform diagram of the output power of a DC-DC power supply circuit of a hybrid power semiconductor provided in this application, see Figure 7 The current and voltage output by the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application are both constant.

[0143] Figure 8 This is a simulation waveform of the resonant cavity current of a resonant module provided in this application, see Figure 8 , a resonant cavity current curve in a resonant unit in a hybrid power semiconductor DC-DC power supply circuit 10 provided in an embodiment of the present application.

[0144] Fig. 9This is a power simulation waveform diagram of the primary switch unit in a resonant module provided in this application, see Fig. 9 , the voltage change waveform and the current change waveform of the primary switch unit in the resonant module in the hybrid power semiconductor DC-DC power supply circuit 10 provided in the embodiment of the present application.

[0145] Fig.10 This is a control signal simulation waveform diagram of the control end of a resonant module provided in this application, see Fig.10 , a waveform diagram of a control signal applied to a control end of a resonance unit in a hybrid power semiconductor DC-DC power supply circuit 10 provided in an embodiment of the present application.

[0146] Fig.11 A schematic diagram of the structure of a DC-DC power supply provided in this application, see Fig.11 , an embodiment of the present application provides a DC-DC power supply 20 including the above-mentioned hybrid power semiconductor DC-DC power supply circuit 10.

[0147] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0148] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A hybrid power semiconductor DC-DC power supply circuit, characterized in that: The DC-DC power supply circuit comprises: a step-down module and a resonance module, and the resonance module comprises: a first resonance unit and a second resonance unit; The input end of the step-down module is connected to an external power supply, the first output end of the step-down module is connected to the first input end of the first resonance unit, the second output end of the step-down module is connected to the second input end of the first resonance unit and the first input end of the second resonance unit respectively, and the third output end of the step-down module is connected to the second input end of the second resonance unit; The control end of the step-down module is used to access a first control signal, the control end of the first resonance unit is used to access a second control signal, and the control end of the second resonance unit is used to access a third control signal; The step-down module reduces the supply voltage provided by the external power supply to a first target voltage under the action of the first control signal, and the resonance module adjusts the first target voltage to a second target voltage under the action of the second control signal and the third control signal.

2. The hybrid power semiconductor DC-DC power supply circuit according to claim 1, characterized in that: The voltage reduction module comprises: a first filtering unit, a switch unit, a second filtering unit and a voltage dividing unit; The first end of the first filter unit is respectively connected to the positive output end of the external power supply and the first end of the switch unit, the second end of the first filter unit is respectively connected to the negative output end of the external power supply and the third end of the switch unit, the second end of the switch unit is connected to the first end of the second filter unit, and the control end of the switch unit is used to access the first control signal; The second end of the second filter unit is connected to the first end of the voltage divider unit, the third end of the second filter unit is connected to the second end of the voltage divider unit, and the fourth end of the second filter unit is respectively connected to the third end of the voltage divider unit and the third end of the switch unit; The first end of the voltage divider unit is also connected to the first input end of the first resonance unit, the second end of the voltage divider unit is also connected to the second input end of the first resonance unit and the first input end of the second resonance unit respectively, and the third end of the voltage divider unit is also connected to the second input end of the second resonance unit.

3. The hybrid power semiconductor DC-DC power supply circuit according to claim 2, characterized in that: The switch unit includes: a first silicon carbide metal oxide semiconductor transistor and a second silicon carbide metal oxide semiconductor transistor; The gate of the first silicon carbide metal oxide semiconductor transistor and the gate of the second silicon carbide metal oxide semiconductor transistor are both used to access a first control signal; The drain of the first silicon carbide metal oxide semiconductor transistor is connected to the first end of the first filtering unit, the source of the first silicon carbide metal oxide semiconductor transistor and the drain of the second silicon carbide metal oxide semiconductor transistor are both connected to the first end of the second filtering unit, and the source of the second silicon carbide metal oxide semiconductor transistor is respectively connected to the second end of the first filtering unit and the fourth end of the second filtering unit.

4. The hybrid power semiconductor DC-DC power supply circuit according to claim 3, characterized in that: The first filtering unit includes: a first capacitor and a second capacitor; One end of the first capacitor is connected to the positive output terminal of the external power supply and the drain of the first silicon carbide metal oxide semiconductor transistor, respectively, the other end of the first capacitor is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the negative output terminal of the external power supply and the source of the second silicon carbide metal oxide semiconductor transistor, respectively.

5. The hybrid power semiconductor DC-DC power supply circuit according to claim 3, characterized in that: The second filtering unit includes: a first inductor, a second inductor, a third capacitor and a fourth capacitor; One end of the first inductor is connected to the source of the first silicon carbide metal oxide semiconductor transistor and the drain of the second silicon carbide metal oxide semiconductor transistor, the other end of the first inductor is connected to one end of the second inductor, and the other end of the second inductor is connected to one end of the third capacitor and the first end of the voltage divider unit, respectively; The other end of the third capacitor is respectively connected to one end of the fourth capacitor and the second end of the voltage divider unit, and the other end of the fourth capacitor is respectively connected to the third end of the voltage divider unit and the source of the second silicon carbide metal oxide semiconductor transistor.

6. The hybrid power semiconductor DC-DC power supply circuit according to claim 2, characterized in that: The voltage dividing unit comprises: a first resistor and a second resistor; One end of the first resistor is respectively connected to the second end of the second filtering unit and the first input end of the first resonant unit, the other end of the first resistor is respectively connected to one end of the second resistor, the third end of the second filtering unit, the second input end of the first resonant unit and the first input end of the second resonant unit, and the other end of the second resistor is respectively connected to the fourth end of the second filtering unit and the second input end of the second resonant unit.

7. The hybrid power semiconductor DC-DC power supply circuit according to claim 1, characterized in that: The first resonant unit includes: a first primary switch unit, a first transformer, and a first secondary switch unit; the second resonant unit includes: a second primary switch unit, a second transformer, a second secondary switch unit, and a third filtering unit; The first end of the first primary switch unit is connected to the first output end of the step-down module, the second end of the first primary switch unit is connected to the first input end of the first transformer, and the third end of the first primary switch unit is respectively connected to the second output end of the step-down module, the first end of the second primary switch unit, and the second input end of the first transformer; The second end of the second primary switch unit is connected to the first input end of the second transformer, and the third end of the second primary switch unit is connected to the third output end of the step-down module and the second input end of the second transformer respectively; The first output end of the first transformer is connected to the first end of the first secondary switch unit, the second output end of the first transformer is connected to the second output end of the second transformer and the first end of the third filter unit respectively, the third output end of the first transformer is connected to the third end of the first secondary switch unit, and the second end of the first secondary switch unit is connected to the second end of the third filter unit; The first output terminal of the second transformer is connected to the first terminal of the second secondary switch unit, the third output terminal of the second transformer is connected to the third terminal of the second secondary switch unit, and the second terminal of the second secondary switch unit is connected to the second terminal of the third filter unit; The control end of the first primary switch unit and the control end of the first secondary switch unit are both used to access the second control signal, and the control end of the second primary switch unit and the control end of the second secondary switch unit are both used to access the third control signal.

8. The hybrid power semiconductor DC-DC power supply circuit according to claim 7, characterized in that: The first primary switch unit includes a first gallium nitride metal oxide semiconductor transistor and a second gallium nitride metal oxide semiconductor transistor, and the first secondary switch unit includes a third gallium nitride metal oxide semiconductor transistor and a fourth gallium nitride metal oxide semiconductor transistor; The drain of the first GaN metal oxide semiconductor transistor is connected to the first output end of the buck module, the source of the first GaN metal oxide semiconductor transistor is respectively connected to the first input end of the first transformer and the drain of the second GaN metal oxide semiconductor transistor, and the source of the second GaN metal oxide semiconductor transistor is respectively connected to the second output end of the buck module, the first end of the second primary switch unit, and the second input end of the first transformer; The source of the third GaN metal oxide semiconductor transistor is connected to the first output terminal of the first transformer, the drain of the third GaN metal oxide semiconductor transistor is respectively connected to the drain of the fourth GaN metal oxide semiconductor transistor and the second terminal of the third filtering unit, and the source of the fourth GaN metal oxide semiconductor transistor is connected to the third output terminal of the first transformer; The gate of the first GaN metal oxide semiconductor transistor, the gate of the second GaN metal oxide semiconductor transistor, the gate of the third GaN metal oxide semiconductor transistor and the gate of the fourth GaN metal oxide semiconductor transistor are all used to access a second control signal.

9. The hybrid power semiconductor DC-DC power supply circuit according to claim 7, characterized in that: The second primary switch unit includes: a fifth gallium nitride metal oxide semiconductor transistor and a sixth gallium nitride metal oxide semiconductor transistor, and the second secondary switch unit includes: a seventh gallium nitride metal oxide semiconductor transistor and an eighth gallium nitride metal oxide semiconductor transistor; The drain of the fifth GaN metal oxide semiconductor transistor is respectively connected to the second output terminal of the step-down module, the source of the second GaN metal oxide semiconductor transistor and the second input terminal of the first transformer, the source of the fifth GaN metal oxide semiconductor transistor is respectively connected to the first input terminal of the second transformer and the drain of the sixth GaN metal oxide semiconductor transistor, and the source of the sixth GaN metal oxide semiconductor transistor is respectively connected to the third output terminal of the step-down module and the second input terminal of the second transformer; The source of the seventh GaN metal oxide semiconductor transistor is connected to the first output terminal of the second transformer, the drain of the seventh GaN metal oxide semiconductor transistor is respectively connected to the drain of the eighth GaN metal oxide semiconductor transistor and the second terminal of the third filtering unit, and the source of the eighth GaN metal oxide semiconductor transistor is connected to the third output terminal of the second transformer; The gate of the fifth GaN metal oxide semiconductor transistor, the gate of the sixth GaN metal oxide semiconductor transistor, the gate of the seventh GaN metal oxide semiconductor transistor and the gate of the eighth GaN metal oxide semiconductor transistor are all used to access a third control signal.

10. The hybrid power semiconductor DC-DC power supply circuit according to claim 7, characterized in that: The third filtering unit includes: a fifth capacitor, a sixth capacitor and a third resistor; One end of the fifth capacitor, one end of the sixth capacitor, and one end of the third resistor are all connected to the second output end of the first transformer and the second output end of the second transformer, and the other end of the fifth capacitor, the other end of the sixth capacitor, and the other end of the third resistor are all connected to the second end of the first secondary switch unit and the second end of the second secondary switch unit.

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