Pixel circuit, image sensor, camera module, equipment and image generation method

Abstract

The invention discloses a pixel circuit, an image sensor, a camera module, equipment and an image generation method, and belongs to the technical field of camera shooting. The pixel circuit comprises pixel units of a Bayer array in multiple rows and multiple columns, a plurality of high dynamic range reading units and a plurality of signal reading units. The input ends of the plurality of signal reading units are electrically connected with the plurality of rows of pixel units one by one; the output ends of the plurality of signal reading units are electrically connected with the plurality of analog-to-digital converters; the first end of each high dynamic range readout unit in the plurality of high dynamic range readout units is electrically connected with the positive electrodes of a plurality of photosensitive elements included in one n-row n-column pixel unit; the second ends of the plurality of high dynamic range readout units are electrically connected with the plurality of first analog-to-digital converters one by one, the high dynamic range readout units are used for outputting high dynamic range images, and the first analog-to-digital converters are analog-to-digital converters which are electrically connected with the first row of pixel units of the n rows and n columns of pixel units in the plurality of analog-to-digital converters.

Description

Technical Field

[0001] The present application belongs to the field of camera technology, and specifically relates to a pixel circuit, an image sensor, a camera module, a device and an image generation method. Background Art

[0002] At present, competition in the mobile terminal product market is becoming increasingly fierce, especially in the field of smartphone photography. The competition among mobile terminals of various brands is extremely fierce, mainly reflected in the improvement of the dynamic range of images.

[0003] In the related art, a multi-exposure multi-frame fusion method is mainly used to improve the dynamic range of an image to obtain a high dynamic range (HDR) image. However, the multi-exposure multi-frame fusion method will produce motion blur on the moving objects being photographed. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a pixel circuit, an image sensor, a camera module, a device and an image generation method, which can improve the dynamic range of the image and do not produce motion blur.

[0005] In a first aspect, an embodiment of the present application provides a pixel circuit, comprising: a pixel unit of a Bayer array of multiple rows and columns, a plurality of high dynamic range readout units, and a plurality of signal readout units;

[0006] The input ends of the plurality of signal readout units are electrically connected one by one to the plurality of rows of pixel units;

[0007] The output ends of the plurality of signal readout units are electrically connected one by one to the plurality of analog-to-digital converters; the signal readout units are used to read out the voltage signal corresponding to each row of pixel units to the analog-to-digital converter;

[0008] A first end of each of the plurality of high dynamic range readout units is electrically connected to a positive electrode of a plurality of photosensitive elements included in a pixel unit of n rows and n columns, wherein the pixel units of n rows and n columns correspond to the same color, and n is a positive integer greater than or equal to 2;

[0009] The second ends of the multiple high dynamic range readout units are electrically connected one by one to multiple first analog-to-digital converters, and the first analog-to-digital converter is an analog-to-digital converter electrically connected to the first row of pixel units of n rows and n columns of pixel units among the multiple analog-to-digital converters. The high dynamic range readout unit is used to output a high dynamic range image.

[0010] In a second aspect, an embodiment of the present application provides an image sensor, including:

[0011] The pixel circuit provided by the embodiment of the present application.

[0012] In a third aspect, an embodiment of the present application provides a camera module, including:

[0013] An image sensor provided in an embodiment of the present application.

[0014] In a fourth aspect, an embodiment of the present application provides an electronic device, including:

[0015] The camera module provided in the embodiment of the present application.

[0016] A fifth method, an embodiment of the present application provides an image generation method, which is applied to the electronic device provided in an embodiment of the present application, and the method includes:

[0017] When the high dynamic range of the image needs to be enhanced, voltage signals of positive electrodes of multiple photosensitive elements included in the pixel units of n rows and n columns are obtained;

[0018] A first image is generated according to the voltage signal.

[0019] In an embodiment of the present application, the pixel circuit includes pixel units in the form of a Bayer array of multiple rows and columns, multiple high dynamic range readout units and multiple signal readout units; the input ends of the multiple signal readout units are electrically connected one by one to the multiple rows of pixel units; the multiple signal readout units are electrically connected one by one to the multiple analog-to-digital converters; the signal readout unit is used to read the voltage signal corresponding to each row of pixel units to the analog-to-digital converter; the first end of each high dynamic range readout unit in the multiple high dynamic range readout units is electrically connected to the positive electrodes of multiple photosensitive elements included in an n-row and n-column pixel unit, wherein the n-row and n-column pixel units correspond to the same color, and n is a positive integer greater than or equal to 2; the second ends of the multiple high dynamic range readout units are electrically connected one by one to the multiple first analog-to-digital converters, the first analog-to-digital converter is an analog-to-digital converter electrically connected to the first row of pixel units of the n-row and n-column pixel units among the multiple analog-to-digital converters, and the high dynamic range readout unit is used to output a high dynamic range image. By reading the voltage signal of the positive electrode of the photosensitive element in the pixel unit of n rows and n columns; generating an image according to the voltage signal of the positive electrode of the photosensitive element in the pixel unit of n rows and n columns, the high dynamic range of the image can be improved without generating motion blur, thereby effectively improving the image quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of the arrangement of pixel units of the Bayer array provided in an embodiment of the present application;

[0021] Figure 2 This is a schematic diagram of a first structure of a pixel circuit provided in an embodiment of the present application;

[0022] Figure 3 is a second structural schematic diagram of a pixel circuit provided in an embodiment of the present application;

[0023] Figure 4 is a third structural schematic diagram of a pixel circuit provided in an embodiment of the present application;

[0024] Figure 5 is a fourth structural schematic diagram of a pixel circuit provided in an embodiment of the present application;

[0025] Figure 6 is a fifth structural schematic diagram of a pixel circuit provided in an embodiment of the present application;

[0026] Figure 7 is a sixth structural schematic diagram of a pixel circuit provided in an embodiment of the present application;

[0027] Figure 8 is a schematic diagram of a specific structure of a pixel circuit provided in an embodiment of the present application;

[0028] Fig. 9 is a flowchart of an image generation method according to an embodiment of the present application;

[0029] Fig.10 It is a schematic diagram of the hardware structure of an electronic device implementing an embodiment of the present application. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0031] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0032] The pixel circuit, image sensor, camera module, device and image generation method provided in the embodiments of the present application are described in detail below with reference to the accompanying drawings through specific embodiments and their application scenarios.

[0033] The pixel circuit provided by the embodiment of the present application includes pixel units of a Bayer array of multiple rows and columns, multiple high dynamic range readout units and multiple signal readout units; the input ends of the multiple signal readout units are electrically connected one by one to the multiple rows of pixel units; the multiple signal readout units are electrically connected one by one to the multiple analog-to-digital converters; the signal readout unit is used to read out the voltage signal corresponding to each row of pixel units to the analog-to-digital converter; the first end of each high dynamic range readout unit in the multiple high dynamic range readout units is electrically connected to the positive electrodes of multiple photosensitive elements included in a pixel unit of n rows and n columns, wherein the pixel units of n rows and n columns correspond to the same color, and n is a positive integer greater than or equal to 2; the second ends of the multiple high dynamic range readout units are electrically connected one by one to multiple first analog-to-digital converters, the first analog-to-digital converter is an analog-to-digital converter electrically connected to the first row of pixel units of n rows and n columns of pixel units among the multiple analog-to-digital converters, and the high dynamic range readout unit is used to output a high dynamic range image.

[0034] In some possible implementations of the embodiments of the present application, the pixel units of multiple rows and columns in the embodiments of the present application are pixel units of at least two rows and at least two columns.

[0035] It can be understood that each pixel unit includes a photosensitive element, and the pixel units of n rows and n columns include n 2 A photosensitive element.

[0036] In some possible implementations of the present application, the pixel units of the Bayer array are arranged as follows: Figure 1 shown. Figure 1 Schematic diagram of the arrangement of pixel units of the Bayer array provided in an embodiment of the present application.

[0037] The pixel circuit provided in the embodiment of the present application is described below with n being 2.

[0038] like Figure 2 As shown, Figure 2 is a schematic diagram of the first structure of the pixel circuit provided in the embodiment of the present application. Figure 2 In the figure, the pixel circuit 100 includes a Bayer array pixel unit 11 with multiple rows and columns, a plurality of high dynamic range readout units 12 and a plurality of signal readout units 13; the input ends of the plurality of signal readout units 13 are electrically connected one by one with the plurality of rows of pixel units 11; the output ends of the plurality of signal readout units 13 are electrically connected one by one with a plurality of analog-to-digital converters 200; the analog-to-digital converter 200 converts the sampled voltage signal of each row of pixel units into a digital signal, and the image processor generates an image according to the digital signal generated by the analog-to-digital converter 200.

[0039] Figure 2The high dynamic range readout unit 12 shown in is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and third column.

[0040] Another high dynamic range readout unit 12 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and second column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and fourth column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and second column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and fourth column.

[0041] Another high dynamic range readout unit 12 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the second row and first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the second row and third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the fourth row and first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the fourth row and third column.

[0042] Another high dynamic range readout unit 12 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the second row and second column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the second row and fourth column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the fourth row and second column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the fourth row and fourth column.

[0043] That is to say, when n is 2, the high dynamic range readout unit 12 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i-th row and j-column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i-th row and j+2-column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+2-th row and j+2-column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+2-th row and j+2-column.

[0044] When n is 3, the high dynamic range readout unit 12 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i-th row and j-th column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i-th row and j+2 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i-th row and j+4 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+2-th row and j+2 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+2-th row and j+4 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+4-th row and j+2 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+4-th row and j+4 column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+4-th row and j+2 column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the i+4-th row and j+4 column.

[0045] In some possible implementations of the embodiments of the present application, the pixel unit includes a first switching tube, a photosensitive element and a second switching tube; the negative electrode of the photosensitive element is electrically connected to the source electrode of the first switching tube; the drain electrode of the first switching tube is electrically connected to the signal readout unit corresponding to the pixel unit including the photosensitive element; and the positive electrode of the photosensitive element is electrically connected to the drain electrode of the second switching tube.

[0046] like Figure 3 As shown, Figure 3 is a second structural diagram of a pixel circuit provided in an embodiment of the present application. Figure 3 In the figure, the pixel unit 11 includes a first switch tube TG1, a photosensitive element PD and a second switch tube TG2; the cathode of the photosensitive element PD is electrically connected to the source of the first switch tube TG1; the drain of the first switch tube TG1 is electrically connected to the signal readout unit 13 corresponding to the pixel unit 11 including the photosensitive element PD; the anode of the photosensitive element PD is electrically connected to the drain of the second switch tube TG2; the source of the second switch tube TG2 is grounded.

[0047] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit may include a third switching tube and a first capacitor; the drain of the third switching tube is electrically connected to the positive electrodes of multiple photosensitive elements included in the pixel units of n rows and n columns; the source of the third switching tube is electrically connected to the first plate of the first capacitor; and the second plate of the first capacitor is grounded.

[0048] like Figure 4 As shown, Figure 4 is a third structural schematic diagram of a pixel circuit provided in an embodiment of the present application. Figure 4In the high dynamic range readout unit 12, the third switch tube TG3 and the first capacitor C1 are included. The drain of the third switch tube TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the third column; the source of the third switch tube TG3 is electrically connected to the first plate of the first capacitor C1 and the analog-to-digital converter 200; the second plate of the first capacitor C1 is grounded.

[0049] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit may further include: a fourth switch tube; the drain of the fourth switch tube is connected to the power supply; and the source of the fourth switch tube is electrically connected to the first plate of the first capacitor.

[0050] like Figure 5 As shown, Figure 5 is a fourth structural schematic diagram of a pixel circuit provided in an embodiment of the present application. Figure 5 In the high dynamic range readout unit 12, a third switch tube TG3, a first capacitor C1 and a fourth switch tube TG4. The drain of the third switch tube TG3 is respectively electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the third column; the source of the third switch tube TG3 is respectively electrically connected to the first plate of the first capacitor C1, the source of the fourth switch tube TG4 and the analog-to-digital converter 200; the drain of the fourth switch tube is connected to the power supply VDD; the second plate of the first capacitor C1 is grounded.

[0051] When the fourth switch tube TG4 is turned on, the first capacitor C1 is cleared.

[0052] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit may also include: a first signal amplifier and a first row selector; the drain of the first signal amplifier is connected to the power supply; the source of the first signal amplifier is electrically connected to the drain of the first row selector; the gate of the first signal amplifier is electrically connected to the first plate of the first capacitor; and the source of the first row selector is electrically connected to the analog-to-digital converter.

[0053] like Figure 6 As shown, Figure 6 is a fifth structural diagram of a pixel circuit provided in an embodiment of the present application. Figure 6In the embodiment, the high dynamic range readout unit 12 includes a third switch tube TG3, a first capacitor C1, a first signal amplifier TG5 and a first row selector TG6, the drain of the third switch tube TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the third column; the source of the third switch tube TG3 is electrically connected to the first plate of the first capacitor C1 and the gate of the first signal amplifier TG5 respectively; the second plate of the first capacitor C1 is grounded; the drain of the first signal amplifier TG5 is connected to the power supply VDD; the source of the first signal amplifier TG5 is electrically connected to the drain of the first row selector TG6; the source of the first row selector TG6 is electrically connected to the analog-to-digital converter 200.

[0054] The voltage signal of the first capacitor C1 is amplified by the first signal amplifier TG5 and the first row selector TG6 and then transmitted to the analog-to-digital converter for reading.

[0055] In some possible implementations of the embodiments of the present application, the signal readout unit may include: a reset transistor, a parasitic capacitor, a second signal amplifier and a second row selector; the gate of the second signal amplifier is electrically connected to the negative electrode of the photosensitive element included in the pixel sub-unit, the first plate of the parasitic capacitor, and the source of the reset transistor, respectively; the drain of the second signal amplifier and the drain of the reset transistor are both connected to the power supply; the source of the second signal amplifier is electrically connected to the drain of the second row selector; and the source of the second row selector is electrically connected to the analog-to-digital converter.

[0056] like Figure 7 As shown, Figure 7 is a sixth structural diagram of a pixel circuit provided in an embodiment of the present application. Figure 7 In the embodiment, the signal readout unit 13 includes a reset transistor RST, a parasitic capacitor FD, a second signal amplifier SF and a second row selector SET. The gate of the second signal amplifier SF is electrically connected to the negative electrode of the photosensitive element PD included in the pixel unit 11, the first plate of the parasitic capacitor FD, and the source of the reset transistor RST; the drain of the second signal amplifier SF and the drain of the reset transistor RST are both connected to the power supply VDD; the source of the second signal amplifier SF is electrically connected to the drain of the second row selector SET; and the source of the second row selector SET is electrically connected to the analog-to-digital converter 200.

[0057] Figure 8 It is a schematic diagram of a specific structure of a pixel unit provided in an embodiment of the present application.

[0058] exist Figure 8In the embodiment, the pixel circuit 100 includes a pixel unit 11 of a Bayer array with multiple rows and columns, multiple high dynamic range readout units 12, and multiple signal readout units 13. The pixel unit 11 includes a first switch tube TG1, a second switch tube TG2, and a photosensitive element PD; the high dynamic range readout unit 12 includes a third switch tube TG3, a first capacitor C1, a fourth switch tube TG4, a first signal amplifier TG5, and a first row selector TG6; the signal readout unit 13 includes a reset transistor RST, a parasitic capacitor FD, a second signal amplifier SF, and a second row selector SET.

[0059] In some possible implementations of the embodiments of the present application, the switch tube, signal amplifier, row selector and reset transistor in the embodiments of the present application can be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

[0060] The negative electrode of the photosensitive element PD is electrically connected to the source of the first switch tube TG1; the drain of the first switch tube TG1 is electrically connected to the drain of the reset transistor RST, the first plate of the parasitic capacitor FD and the gate of the second signal amplifier SF respectively, the second plate of the parasitic capacitor FD is grounded, the source of the reset transistor RST and the source of the second signal amplifier SF are connected to the power supply VDD, the drain of the second signal amplifier SF is electrically connected to the source of the second row selector SET; the drain of the second row selector SET is electrically connected to the positive electrode of the DC power supply DC and the analog-to-digital converter 200 respectively; the positive electrode of the photosensitive element PD is electrically connected to the drain of the second switch tube TG2; the source of the second switch tube TG2 is grounded.

[0061] The drain of the third switch tube TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and the third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and the third column respectively; the source of the third switch tube TG3 is electrically connected to the first plate of the first capacitor C1, the source of the fourth switch tube TG4 and the gate of the first signal amplifier TG5 respectively; the drain of the fourth switch tube TG4 and the drain of the first signal amplifier TG5 are both electrically connected to the power supply VDD; the source of the first signal amplifier TG5 is electrically connected to the drain of the first row selector TG6; the source of the first row selector TG6 is electrically connected to the analog-to-digital converter 200.

[0062] When the pixel is exposed, the reset transistor RST, the fourth switch tube TG4 and each pixel subunit including the first switch tube TG1 are turned on to clear the first capacitor C1 and the parasitic capacitor FD. The electron-hole pairs generated by light irradiation will separate due to the existence of the electric field of the photosensitive element PD, and the electrons will move to the N area and the holes will move to the P area. After the exposure is completed, the reset transistor RST is closed to reset the parasitic capacitor FD to a high level. After the reset is completed, the reset level of the parasitic capacitor FD is read out through the second signal amplifier SF and the second row selector SET.

[0063] When it is necessary to generate an image with higher definition, the first switch tube TG1 at the negative terminal of the photosensitive element PD included in the pixel unit 11 of the first row and the first column is first closed, and the charge of the photosensitive element included in the pixel unit 11 of the first row and the first column is transferred from the photosensitive area to the parasitic capacitor FD for a second readout. At this time, the voltage of the parasitic capacitor FD decreases due to the charge injection of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, and the voltage signal of the parasitic capacitor FD is output to the analog-to-digital converter 200 through the second signal amplifier SF and the second row selector SET; the processing process of the photosensitive element PD included in the pixel unit 11 of the first row and the second column to the photosensitive element PD included in the pixel unit 11 of the first row and the last column is similar to the processing process of the photosensitive element PD included in the pixel unit 11 of the first row and the first column, and the embodiment of the present application will not be repeated here, so that the photoelectric signal of a row of pixels can be obtained. The processing process from the second row to the last row is similar to the processing process of the first row, and the embodiment of the present application will not be repeated here, so that a raw image with higher definition can be obtained.

[0064] When it is necessary to generate an image with a higher dynamic range, the second switch tube TG2 at the positive end of the photosensitive element PD included in the pixel unit 11 in the first row and first column, the second switch tube TG2 at the positive end of the photosensitive element PD included in the pixel unit 11 in the first row and third column, the second switch tube TG2 at the positive end of the photosensitive element PD included in the pixel unit 11 in the third row and first column, and the second switch tube TG2 at the positive end of the photosensitive element PD included in the pixel unit 11 in the third row and third column are disconnected, and the third switch tube TG3 and the fourth switch tube TG4 are closed. All the positively charged holes of the four photosensitive elements are transferred to the first capacitor C1, wherein the four photosensitive elements include the photosensitive element PD included in the pixel unit 11 of the first row and the first column, the photosensitive element PD included in the pixel unit 11 of the first row and the third column, the photosensitive element PD included in the pixel unit 11 of the third row and the first column, and the photosensitive element PD included in the pixel unit 11 of the third row and the third column. At this time, the voltage of the first capacitor C1 rises, and the voltage signal of the first capacitor C1 is transmitted to the analog-to-digital converter 200 for reading through the first signal amplifier TG5 and the first row selector TG6. The obtained voltage signal is the sum of the voltage signals of the four photosensitive elements, that is, the total signal of 4 pixels of the same color combined together. Since the voltage of the first capacitor C1 is much larger than the voltage of the parasitic capacitor FD, the dynamic range of the image generated by the image processor will be very large.

[0065] In the embodiment of the present application, an image is generated by the electrical signal of the positive electrode of the photosensitive element, which can generate an image with a larger dynamic range, improve the high dynamic range of the image, and does not produce motion blur, thereby effectively improving the image quality.

[0066] The positive and negative electrodes of the pixel unit in the embodiment of the present application can output two voltage signals. These two voltage signals are output in different ways, allowing the sensor to obtain images with high dynamic range or high definition. In high dynamic range scenarios, the photo-taking effect and user experience can be effectively improved.

[0067] The embodiment of the present application also provides an image sensor, including the pixel circuit provided by the embodiment of the present application.

[0068] The embodiment of the present application also provides a camera module, including the image sensor provided by the embodiment of the present application.

[0069] An embodiment of the present application also provides an electronic device, including the camera module provided in the embodiment of the present application.

[0070] The electronic device in the embodiment of the present application may be a terminal, or may be other devices other than a terminal. For example, the electronic device may be a mobile phone, a tablet computer, a laptop computer, a PDA, a vehicle-mounted electronic device, a mobile Internet device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook or a personal digital assistant (PDA), etc., and may also be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine or a self-service machine, etc., which is not specifically limited in the embodiment of the present application.

[0071] The electronic device in the embodiment of the present application may be an electronic device having an operating system. The operating system may be an Android operating system, an iOS operating system, or other possible operating systems, which are not specifically limited in the embodiment of the present application.

[0072] The embodiment of the present application also provides an image generating method, which is applied to the electronic device provided in the embodiment of the present application.

[0073] Fig. 9 : is a flowchart of an image generation method provided in an embodiment of the present application. The image generation method may include the following steps:

[0074] Step 901: when it is necessary to enhance the high dynamic range of an image, voltage signals of positive electrodes of a plurality of photosensitive elements included in pixel units of n rows and n columns are obtained;

[0075] In some possible implementations of the embodiments of the present application, step 901 may include: disconnecting multiple switching tubes that are electrically connected to the positive electrodes of multiple photosensitive elements in the pixel units of n rows and n columns; transmitting the voltage signals of the positive electrodes of the multiple photosensitive elements included in the pixel units of n rows and n columns to the first analog-to-digital converter for reading through a high dynamic range readout unit, and obtaining a voltage signal that combines the voltage signals of the positive electrodes of the multiple photosensitive elements included in the pixel units of n rows and n columns.

[0076] Exemplarily, the connection between the high dynamic range readout unit and the positive electrodes of the four photosensitive elements included in the 2-row and 2-column pixel units is taken as an example for description. The 2-row and 2-column pixel units include the pixel units in the first row and the first column, the pixel units in the first row and the third column, the pixel units in the third row and the first column, and the pixel units in the third row and the third column.

[0077] Disconnect the second switch tube at the positive end of the photosensitive element included in the pixel unit of the first row and first column, the second switch tube at the positive end of the photosensitive element included in the pixel unit of the first row and third column, the second switch tube at the positive end of the photosensitive element included in the pixel unit of the third row and first column, and the second switch tube at the positive end of the photosensitive element included in the pixel unit of the third row and third column, and close the third switch tube and the fourth switch tube included in the high dynamic range readout unit. The positively charged holes of the four photosensitive elements are all transferred to the first capacitor included in the high dynamic range readout unit, wherein the four photosensitive elements include: the photosensitive element included in the pixel unit of the first row and the first column, the photosensitive element included in the pixel unit of the first row and the third column, the photosensitive element included in the pixel unit of the third row and the first column, and the photosensitive element included in the pixel unit of the third row and the third column; at this time, the voltage of the first capacitor rises, and the voltage signal of the first capacitor is transmitted to the analog-to-digital converter for reading through the first signal amplifier and the first row selector included in the high dynamic range readout unit, and the obtained voltage signal is the sum of the voltage signals of the four photosensitive elements, that is, the total signal of 4 pixels of the same color combined together; since the voltage of the first capacitor is much larger than the voltage of the parasitic capacitor, the dynamic range of the image generated by the image processor will be very large.

[0078] Step 902: Generate a first image according to the voltage signal.

[0079] In the embodiment of the present application, an image is generated by the electrical signal of the positive electrode of the photosensitive element, which can generate an image with a larger dynamic range, improve the high dynamic range of the image, and does not produce motion blur, thereby effectively improving the image quality.

[0080] In some possible implementations of the embodiments of the present application, the image generation method provided by the embodiments of the present application may also include: when it is necessary to enhance the clarity of the image, closing multiple switch tubes in the pixel units of n rows and n columns that are electrically connected to the negative electrodes of multiple photosensitive elements; transmitting the voltage signal of the negative electrode of the photosensitive element in each row of pixel units to the analog-to-digital converter for reading through the signal readout unit, and obtaining the voltage signal corresponding to each row of pixel units; generating a second image according to the voltage signal corresponding to each row of pixel units.

[0081] When it is necessary to generate an image with higher definition, the first switch tube at the negative terminal of the photosensitive element included in the pixel unit of the first row and the first column is first closed, and the charge of the photosensitive element included in the pixel unit of the first row and the first column is transferred from the photosensitive area to the parasitic capacitor for a second readout. At this time, the voltage of the parasitic capacitor decreases due to the charge injection of the photosensitive element included in the pixel unit of the first row and the first column, and the voltage signal of the parasitic capacitor is output to the analog-to-digital converter through the second signal amplifier and the second row selector; the processing process of the photosensitive element included in the pixel unit of the first row and the second column to the photosensitive element included in the pixel unit of the last column of the first row is similar to the processing process of the photosensitive element included in the pixel unit of the first row and the first column, and the embodiment of the present application will not be repeated here, so that the photoelectric signal of a row of pixels can be obtained. The processing process from the second row to the last row is similar to the processing process of the first row, and the embodiment of the present application will not be repeated here.

[0082] In the embodiments of the present application, an image with higher definition can be obtained.

[0083] The positive and negative electrodes of the pixel unit in the embodiment of the present application can output two voltage signals. These two voltage signals are output in different ways, allowing the sensor to obtain images with high dynamic range or high definition. In high dynamic range scenarios, the photo-taking effect and user experience can be effectively improved.

[0084] Fig.10 It is a schematic diagram of the hardware structure of an electronic device implementing an embodiment of the present application.

[0085] The electronic device 1000 includes but is not limited to: a radio frequency unit 1001, a network module 1002, an audio output unit 1003, an input unit 1004, a sensor 1005, a display unit 1006, a user input unit 1007, an interface unit 1008, a memory 1009, and a processor 1010 and other components.

[0086] Those skilled in the art will appreciate that the electronic device 1000 may also include a power source (such as a battery) for supplying power to each component, and the power source may be logically connected to the processor 1010 through a power management system, thereby implementing functions such as managing charging, discharging, and power consumption management through the power management system. Fig.10 The electronic device structure shown in the figure does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently, which will not be described in detail here.

[0087] Among them, the electronic device 1000 in the embodiment of the present application includes the camera module provided in the embodiment of the present application, the camera module provided in the embodiment of the present application includes the image sensor provided in the embodiment of the present application; the image sensor provided in the embodiment of the present application includes the pixel circuit provided in the embodiment of the present application.

[0088] The processor 1010 is used to: when it is necessary to enhance the high dynamic range of an image, obtain voltage signals of positive electrodes of a plurality of photosensitive elements included in the pixel units of n rows and n columns; and generate a first image according to the voltage signals.

[0089] In the embodiment of the present application, an image is generated by the electrical signal of the positive electrode of the photosensitive element, which can generate an image with a larger dynamic range, improve the high dynamic range of the image, and does not produce motion blur, thereby effectively improving the image quality.

[0090] It should be understood that in the embodiment of the present application, the input unit 1004 may include a graphics processor (Graphics Processing Unit, GPU) 10041 and a microphone 10042, and the graphics processor 10041 processes the image data of the static picture or video obtained by the image capture device (such as a camera) in the video capture mode or the image capture mode. The display unit 1006 may include a display panel 10061, and the display panel 10061 may be configured in the form of a liquid crystal display, an organic light emitting diode, etc. The user input unit 1007 includes a touch panel 10071 and at least one of other input devices 10072. The touch panel 10071 is also called a touch screen. The touch panel 10071 may include two parts: a touch detection device and a touch controller. Other input devices 10072 may include, but are not limited to, a physical keyboard, function keys (such as volume control keys, switch keys, etc.), a trackball, a mouse, and a joystick, which will not be repeated here.

[0091] The memory 1009 can be used to store software programs and various data. The memory 1009 may mainly include a first storage area for storing programs or instructions and a second storage area for storing data, wherein the first storage area may store an operating system, an application program or instructions required for at least one function (such as a sound playback function, an image playback function, etc.), etc. In addition, the memory 1009 may include a volatile memory or a non-volatile memory, or the memory 1009 may include both volatile and non-volatile memories. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be a random access memory (RAM), a static random access memory (SRAM), a dynamic random access memory (DRAM), a synchronous dynamic random access memory (SDRAM), a double data rate synchronous dynamic random access memory (DDRSDRAM), an enhanced synchronous dynamic random access memory (ESDRAM), a synchronous link dynamic random access memory (SLDRAM) and a direct memory bus random access memory (DRRAM). The memory 1009 in the embodiment of the present application includes but is not limited to these and any other suitable types of memory.

[0092] The processor 1010 may include one or more processing units; optionally, the processor 1010 integrates an application processor and a modem processor, wherein the application processor mainly processes operations related to an operating system, a user interface, and application programs, and the modem processor mainly processes wireless communication signals, such as a baseband processor. It is understandable that the modem processor may not be integrated into the processor 1010.

[0093] An embodiment of the present application also provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the various processes of the above-mentioned image generation method embodiment are implemented and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0094] The processor is a processor in the electronic device described in the above embodiment. The readable storage medium includes a computer-readable storage medium, and examples of computer-readable storage media include non-transitory computer-readable media, such as a computer read-only memory ROM, a random access memory RAM, a magnetic disk or an optical disk.

[0095] An embodiment of the present application also provides a chip, which includes a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the various processes of the above-mentioned image generation method embodiment, and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0096] It should be understood that the chip mentioned in the embodiments of the present application can also be called a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0097] An embodiment of the present application also provides a computer program product, which is stored in a storage medium. The program product is executed by at least one processor to implement the various processes of the above-mentioned image generation method embodiment and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0098] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0099] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a computer software product, which is stored in a storage medium (such as ROM / RAM, a disk, or an optical disk), and includes a number of instructions for a terminal (which can be a mobile phone, a computer, a server, or a network device, etc.) to execute the methods described in each embodiment of the present application.

[0100] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A pixel circuit, characterized in that: The pixel circuit comprises: a plurality of rows and columns of Bayer array pixel units, a plurality of high dynamic range readout units and a plurality of signal readout units; The input ends of the plurality of signal readout units are electrically connected one by one to the plurality of rows of pixel units; The output ends of the plurality of signal readout units are electrically connected one by one to a plurality of analog-to-digital converters; the signal readout unit is used to read out the voltage signal corresponding to each row of pixel units to the analog-to-digital converter; A first end of each of the plurality of high dynamic range readout units is electrically connected to a positive electrode of a plurality of photosensitive elements included in a pixel unit of n rows and n columns, wherein the pixel units of n rows and n columns correspond to the same color, and n is a positive integer greater than or equal to 2; The second ends of the multiple high dynamic range readout units are electrically connected one by one to multiple first analog-to-digital converters, and the high dynamic range readout units are used to output high dynamic range images. The first analog-to-digital converter is an analog-to-digital converter among the multiple analog-to-digital converters that is electrically connected to the first row of pixel units of the n rows and n columns of pixel units.

2. The pixel circuit according to claim 1, characterized in that: The pixel unit includes a first switch tube, a photosensitive element and a second switch tube; The cathode of the photosensitive element is electrically connected to the source of the first switch tube; The drain of the first switch tube is electrically connected to a signal readout unit corresponding to a pixel unit including the photosensitive element; The positive electrode of the photosensitive element is electrically connected to the drain electrode of the second switch tube; The source of the second switch tube is grounded.

3. The pixel circuit according to claim 1, characterized in that: The high dynamic range readout unit comprises: a third switch tube and a first capacitor; The drain of the third switch tube is electrically connected to the positive electrodes of the plurality of photosensitive elements included in the pixel units of n rows and n columns; The source of the third switch tube is electrically connected to the first electrode plate of the first capacitor; The second plate of the first capacitor is grounded.

4. The pixel circuit according to claim 3, characterized in that: The high dynamic range readout unit further includes: a fourth switch tube; The drain of the fourth switch tube is connected to a power supply; The source of the fourth switch tube is electrically connected to the first plate of the first capacitor.

5. The pixel circuit according to claim 3, characterized in that: The high dynamic range readout unit further includes: a first signal amplifier and a first row selector; The drain of the first signal amplifier is connected to a power supply; A source of the first signal amplifier is electrically connected to a drain of the first row selector; The gate of the first signal amplifier is electrically connected to the first plate of the first capacitor; The source of the first row selector is electrically connected to the analog-to-digital converter.

6. The pixel circuit according to claim 1, characterized in that: The signal readout unit includes: a reset transistor, a parasitic capacitor, a second signal amplifier and a second row selector; The gate of the second signal amplifier is electrically connected to the negative electrode of the photosensitive element included in the pixel unit, the first plate of the parasitic capacitor, and the source of the reset transistor respectively; The drain of the second signal amplifier and the drain of the reset transistor are both connected to a power supply; A source of the second signal amplifier is electrically connected to a drain of the second row selector; A source of the second row selector is electrically connected to the analog-to-digital converter.

7. An image sensor, characterized in that: The image sensor comprises the pixel circuit according to any one of claims 1 to 6.

8. A camera module, characterized in that: The camera module includes the image sensor described in claim 7.

9. An electronic device, characterized in that: The electronic device includes the camera module described in claim 8.

10. An image generation method, characterized in that: Applicable to the electronic device according to claim 9; the method comprising: When the high dynamic range of the image needs to be enhanced, voltage signals of positive electrodes of a plurality of photosensitive elements included in the n rows and n columns of pixel units are obtained; A first image is generated according to the voltage signal.

11. The method according to claim 10, characterized in that The step of obtaining voltage signals of positive electrodes of a plurality of photosensitive elements included in the n-row and n-column pixel units includes: Disconnecting a plurality of switch tubes electrically connected to the positive electrodes of a plurality of photosensitive elements in the n rows and n columns of pixel units; The voltage signals of the positive electrodes of the multiple photosensitive elements included in the n-row and n-column pixel units are transmitted to the first analog-to-digital converter for reading through the high dynamic range readout unit to obtain a voltage signal that combines the voltage signals of the positive electrodes of the multiple photosensitive elements included in the n-row and n-column pixel units.

12. The method according to claim 11, characterized in that The method further comprises: When the image clarity needs to be enhanced, multiple switch tubes electrically connected to the negative electrodes of the multiple photosensitive elements in the n rows and n columns of pixel units are closed; The signal readout unit transmits the voltage signal of the negative electrode of the photosensitive element in each row of pixel units to the analog-to-digital converter for reading, thereby obtaining a voltage signal corresponding to each row of pixel units; A second image is generated according to the voltage signal corresponding to each row of pixel units.

Images