Full-spectrum white light emitting device

Abstract

The embodiment of the invention provides a full-spectrum white light emitting device. The light-emitting device comprises a deep red light-emitting device and a white light-emitting device; the deep red light emitting device includes: a light emitting chip; and the fluorescent layer is arranged on the light-emitting chip, and light emitted by the dark red light-emitting device only has a wave crest within the range of 630-830 nanometers. According to the embodiment of the invention, the deep red light emitting device is provided with the light emitting chip and the fluorescent layer comprising the deep red light fluorescent powder, so that deep red light emitting is simply and conveniently realized, a deep red light (or a part of red light and near-infrared light) part beneficial to human eyes is supplemented on the basis of a white light emitting device, the use of red light chips with multiple wavelengths is avoided, and the light emitting efficiency is improved. Therefore, the production difficulty is reduced.

Description

Technical Field

[0001] The present invention relates to the field of lighting technology, and in particular to a full-spectrum white light emitting device. Background Art

[0002] The future development of lighting will tend to be human-oriented lighting. Human-oriented lighting refers to the art of creating lighting that simulates natural daylight to improve human functions. It can improve human functions, comfort, health and happiness. Existing technology has achieved close to the solar spectrum within the visible light range (425-690nm) that can be recognized by the human eye, but as people's requirements for light quality increase, the market has further demand, hoping to further supplement the deep red light that is beneficial to the human eye and even some near-infrared light on the existing basis. Therefore, some LED eye protection lamps are currently designed to supplement the deep red part of visible light. If you want to supplement red light alone, you generally think of using gallium arsenide red light chips. However, since the half-wave width of the light emitted by the gallium arsenide red light chip is very narrow, about 18 nanometers, to supplement the red light in a larger range, you need to use red light chips with multiple wavelengths, which increases the difficulty of production and manufacturing. Summary of the invention

[0003] Therefore, in order to overcome at least some of the defects and shortcomings in the prior art, an embodiment of the present invention provides a full-spectrum white light emitting device.

[0004] Specifically, an embodiment of the present invention provides a light-emitting device, including: a deep red light-emitting device and a white light-emitting device; the deep red light-emitting device includes: a light-emitting chip; and a fluorescent layer, which is arranged on the light-emitting chip, and the light emitted by the deep red light-emitting device has a peak only in the range of 630 to 830 nanometers.

[0005] From the above, it can be seen that the embodiment of the present invention sets the deep red light emitting device as a light emitting chip and a fluorescent layer including deep red light phosphor, so as to simply realize the deep red light emission in a larger wavelength range, and supplement the deep red light (or including part of red light and near-infrared light) that is beneficial to the human eye on the basis of the white light emitting device, avoiding the use of red light chips with multiple wavelengths, thereby reducing the difficulty of production. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0007] Figure 1 A schematic diagram of the structure of a deep red light emitting device provided in an embodiment of the present application.

[0008] Figure 2A and Figure 2B A schematic diagram of the spectrum of a deep red light emitting device.

[0009] Figure 3 Another schematic diagram of the structure of the deep red light emitting device provided in an embodiment of the present application.

[0010] Figure 4A and Figure 4B Schematic diagram of the spectrum of another deep red light emitting device.

[0011] Figure 5A Schematic diagram of the spectrum synthesized by a deep red light emitting device and an existing 4000K full-spectrum white light emitting device that is recognizable to the human eye.

[0012] Figure 5B Schematic diagram of the spectrum synthesized by a deep red light emitting device and an existing 2700K full-spectrum white light emitting device that is recognizable by the human eye. DETAILED DESCRIPTION

[0013] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments described in the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present invention.

[0014] The embodiment of the present invention provides a light emitting device, including a white light emitting device and a deep red light emitting device 100. The white light emitting device may be, for example, a full-spectrum white light emitting device that is recognizable by the human eye. Figure 1 , the deep red light emitting device 100 may, for example, include a light emitting chip 10 and a fluorescent layer 20. The fluorescent layer 20 may, for example, be disposed on the light emitting chip 10, the fluorescent layer 20 including a deep red light phosphor, and the light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 830 nanometers. Further, in some implementations of the present embodiment, the light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 780 nanometers. The present embodiment configures the deep red light emitting device 100 as a light emitting chip 10 and a fluorescent layer 20 including a deep red light phosphor, so that the deep red light emitting device 100 emits deep red light of a larger wavelength range, and may even include part of near infrared light, thereby supplementing the part of deep red light (or including part of red light and near infrared light) that is beneficial to the human eye on the existing basis, avoiding the use of red light chips with multiple wavelengths, thereby reducing the difficulty of production.

[0015] Furthermore, in this embodiment, the peak wavelength of the emission spectrum of the deep red phosphor is greater than 690 nanometers. Specifically, the deep red phosphor is Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr are mixed with any one or more thereof.

[0016] The deep red light emitting device 100 provided in this embodiment can select a suitable chip and phosphor ratio according to the needs of users, so that the peak wavelength of the emitted light can be selectively between 630 and 830 nanometers, and has a peak in the range of 690 to 830 nanometers (in some embodiments, 690 to 780 nanometers), and its half-wave width (FWHM) is greater than 100 nanometers. This is reflected in the conventional visible light spectrum (380 to 780 nanometers) as the intensity value of the light at a wavelength of 780 nanometers is more than 30% of the peak wavelength intensity value of the deep red light emitting device 100 in the range of 690 to 780 nanometers.

[0017] In one implementation of this embodiment, the light emitting chip 10 may be, for example, a red light chip, which excites the deep red light phosphor to emit deep red light. Figure 2A and Figure 2B , Figure 2A and Figure 2B It is a schematic diagram of the spectrum of the deep red light emitting device 100 prepared according to different needs of users. Figure 2A and Figure 2B The light emitting chip 10 used in the deep red light emitting device 100 is a red light chip, with a main wavelength range of 630 to 660 nanometers and a peak in the range of 645 to 675 nanometers. Figure 2A and Figure 2B The deep red phosphors used in the two deep red light emitting devices 100 represented by the present invention may be, for example, Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr are mixed with any one or more thereof. Figure 2A and Figure 2B The two deep red light emitting devices 100 shown can use different phosphors or the same phosphor, but the amount of phosphor used will be different to meet the different needs of different customers for red light and deep red light. Figure 2A and Figure 2BIt can be seen that the light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 830 nanometers, so as to ensure that the ratio of the integrated intensity of the luminous spectrum of the deep red light emitting device 100 at less than 580 nanometers to the spectral integrated intensity of the light emitted by the deep red light emitting device is less than or equal to 2%, thereby ensuring that it can be simply matched with the existing full-spectrum white light emitting device that can be recognized by the human eye to supplement the deep red light that is beneficial to the human eye without causing a significant impact on the color output of the final synthetic light, and realizing full-spectrum white light in a larger wavelength range. In this embodiment, at least one peak of the deep red light emitting device 100 is located in the range of 690 to 780 nanometers, Figure 2A and Figure 2B And the following Figure 4A , Figure 4B The spectra are normalized based on the peak value in the range of 690 to 780 nanometers. Figure 2A and Figure 2B As shown, the light emitted by the deep red light emitting device 100 has a peak at 630-690 nanometers and at least another peak at 690-780 nanometers; Figure 2B The peak normalized intensity of the deep red light emitting device 100 in the range of 630 to 690 nanometers is greater than that of Figure 2A The peak normalized intensity of the deep red light emitting device 100 in the range of 630-690 nanometers is shown, which can meet the higher demand of some users for partial red light. The spectrum of the light emitted by the deep red light emitting device 100 of this embodiment is not continuous in the range of 630-830 nanometers, that is, at least one pair of adjacent peaks has a trough with a normalized intensity less than 30%.

[0018] The different implementations of this embodiment all use the red light chip as the excitation light source to excite the deep red light phosphor, so that the light emitted by the deep red light emitting device 100 includes the beneficial red light required by some users plus the wide-band deep red light and even includes part of the near-infrared light. By combining the deep red light emitting device 100 with the full-spectrum white light emitting device recognizable by the human eye in the prior art, the missing deep red light part of the full-spectrum white light recognizable by the human eye in the prior art can be better compensated, and a full-spectrum white light with a larger wavelength range can be achieved. At the same time, the excitation efficiency of the deep red light phosphor is guaranteed, and the intensity at the peak wavelength of the red light chip and the peak wavelength of the deep red light can be selected according to the specific needs of the user, and are not limited to the two implementations introduced in this embodiment.

[0019] In another embodiment of the present embodiment, the light-emitting chip 10 may be, for example, a blue light chip, and the fluorescent layer 20 may, for example, also include nitride red powder, that is, the fluorescent layer 20 includes deep red light phosphor and nitride red powder, and the light emitted by the deep red light-emitting device 100 has a peak only in the range of 630 to 830 nanometers. Based on the choices of most users, it may have a peak only in the range of 630 to 780 nanometers, or even only in the range of 690 to 780 nanometers. By setting the deep red light phosphor, the blue light chip can excite the deep red light phosphor to emit deep red light. By setting the nitride red powder, the excess blue light emitted by the blue light chip can be absorbed, and the purity of the deep red light emitted by the deep red light emitting device 100 can be improved to ensure that the ratio of the spectral integral intensity of the luminous spectrum of the deep red light emitting device 100 at less than 580 nanometers to the spectral integral intensity of the light emitted by the deep red light emitting device is less than or equal to 2%, thereby avoiding the deep red light emitting device 100 from affecting the blue-green light part within the visible light range recognizable to the human eye when used in combination with the existing full-spectrum white light recognizable to the human eye, causing the synthetic spectrum to deviate from the sunlight spectrum. In this embodiment, the deep red light phosphor can be, for example, Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr; the peak wavelength of the emission spectrum of the nitride red powder is greater than or equal to 645 nanometers. The main wavelength range of the blue light chip is 430 to 470 nanometers, and it can be a narrow-wave blue light chip or a wide-wave blue light chip.

[0020] In this embodiment, the fluorescent layer 20 may be formed by mixing the nitride red powder and the deep red fluorescent powder. Figure 1 The single layer shown, see also Figure 3 The fluorescent layer 20 includes a first fluorescent layer 21 and a second fluorescent layer 22 which are stacked, wherein the first fluorescent layer 21 is preferably a nitride red powder, and the second fluorescent layer 22 is a deep red fluorescent powder. In addition, the second fluorescent layer 22 is disposed on the light-emitting chip 10, and the first fluorescent layer 21 is disposed on the side of the second fluorescent layer 22 away from the light-emitting chip 10, that is, the first fluorescent layer 21 is disposed on the second fluorescent layer 22, but the present invention is not limited thereto.

[0021] See also Figure 4A and Figure 4B , Figure 4A and Figure 4B It is a schematic diagram of the spectrum of the deep red light emitting device 100 prepared according to different needs of users in this embodiment. Figure 4A and Figure 4BThe light-emitting chips 10 used in the deep red light emitting devices 100 represented are all blue light chips, and the blue light chips used may be the same or different; similarly, the two deep red light emitting devices 100 may use different phosphors or the same phosphors, but the amount of phosphors used and the ratio of deep red phosphors to nitride red phosphors may be different to meet the different needs of different customers for deep red light in different bands. The light emitted by the deep red light emitting device 100 of this embodiment has a peak only in the range of 630 to 830 nanometers, mainly only in the deep red light band of 690 to 780 nanometers or only in the deep red light of 690 to 830 nanometers and part of the near-infrared band, so as to ensure that the ratio of the integral intensity of the luminous spectrum of the deep red light emitting device 100 in the part less than 580 nanometers to the integral intensity of the overall spectrum of the light emitted by the deep red light emitting device is less than or equal to 2%, thereby ensuring that it can be simply matched with the existing full-spectrum white light emitting device that can be recognized by the human eye to supplement the deep red light that is beneficial to the human eye without causing too much impact on the color output of the final synthetic light. In this embodiment, the spectrum of the deep red light emitting device 100 is continuous in the range of 630-830 nanometers, and the peak wavelength is in the range of greater than 690 nanometers, and the half-wave width is in the range of greater than 100 nanometers.

[0022] The deep red light emitting device 100 provided in this embodiment can be combined with an existing full-spectrum white light emitting device recognizable by the human eye, so as to supplement the deep red light (or including part of the red light and near-infrared light) that is beneficial to the human eye on the existing basis, without causing a significant impact on the final color output of the light emitting device. The following is an illustration of the combination of the existing 2700K and 4000K full-spectrum white light emitting devices recognizable by the human eye and the deep red light emitting device 100 provided by the present invention; the 2700K and 4000K full-spectrum white light emitting devices recognizable by the human eye can be, for example, the Thrive series of the Pure brand. It should be noted that the deep red light emitting device 100 can be, for example, combined with a white light emitting device as a light-emitting device, or can be, for example, used together as two separately designed light-emitting devices, and this embodiment is not limited to this.

[0023] See also Figure 5A , taking 4000K color temperature as an example, Figure 5A The 4000K BBL curve represents the blackbody radiation trajectory of the 4000K color temperature; the 4000K curve is the luminous spectrum of an existing 4000K full-spectrum white light emitting device that is recognizable by the human eye, and the 4000K+R1, 4000K+R2, 4000K+R3, and 4000K+R4 curves are respectively Figure 2A , Figure 2B , Figure 4A , Figure 4B Schematic diagram of the synthetic spectrum emitted by the deep red light emitting device 100 and the aforementioned 4000K full spectrum white light emitting device recognizable by the human eye. Figure 5A It can be seen that no matter the deep red light emitting device 100 is composed of a red chip and deep red phosphor, or is composed of a blue chip and deep red phosphor and nitride red powder, it can be simply matched with the existing full-spectrum white light emitting device recognizable by the human eye according to different customer needs, to supplement the red light and / or deep red light parts that users believe are beneficial to the human eye, without causing obvious effects on other colors recognizable by the human eye, and the synthetic spectrum can still be well close to the blackbody radiation trajectory under the corresponding color temperature.

[0024] See also Figure 5B , taking 2700K color temperature as an example, Figure 5B The 2700K BBL curve represents the blackbody radiation trajectory of the 2700K color temperature; the 2700K curve is the luminous spectrum of an existing 2700K full-spectrum white light emitting device that is recognizable by the human eye, and the 2700K+R1, 2700K+R2, 2700K+R3, and 2700K+R4 curves are respectively Figure 2A , Figure 2B , Figure 4A , Figure 4B Schematic diagram of the synthetic spectrum emitted by the deep red light emitting device 100 and the aforementioned 2700K full spectrum white light emitting device recognizable by the human eye. Figure 5B It can be seen that no matter the deep red light emitting device 100 is composed of a red chip and deep red phosphor, or is composed of a blue chip and deep red phosphor and nitride red powder, it can be simply matched with the existing full-spectrum white light emitting device recognizable by the human eye according to different customer needs, to supplement the red light and / or deep red light parts that users believe are beneficial to the human eye without causing obvious effects on other colors recognizable by the human eye. The synthetic spectrum can still be well close to the blackbody radiation trajectory under the corresponding color temperature, thereby realizing full-spectrum white light with a larger wavelength range.

[0025] More specifically, see Table 1, which is the color coordinate data of the mixed light emitted by the combination of the existing 4000K and 2700K full-spectrum white light emitting devices recognizable by the human eye and the deep red light emitting device 100 provided by different embodiments of the present invention. It can be seen from Table 1 that the color coordinates of the existing 4000K or 2700K full-spectrum white light emitting devices recognizable by the human eye before and after being combined with the deep red light emitting device 100 provided by the present invention (4000K compared to 4000K+R1, 4000K+R2, 4000K+R3, 4000K+R4, and 2700K compared to 2700K+R1, 2700K+R2, 2700K+R3, 2700K+R4) are similar (the change in color coordinates x and y is less than or equal to 0.02). From the above, it can be seen that the deep red light emitting device 100 of the present invention can be used in combination with the existing full-spectrum white light emitting device recognizable by the human eye, and the color output of the combined synthetic light does not change much compared to the full-spectrum white light emitting device recognizable by the human eye. That is, the deep red light emitting device 100 of the present invention can be conveniently used in combination with the existing full-spectrum white light recognizable by the human eye depending on the user's different needs for red light and / or near-infrared light.

[0026] Table 1

[0027] x y x y 4000K 0.3793 0.3795 2700K 0.4519 0.4068 4000K+R1 0.3835 0.3783 2700K+R1 0.4552 0.4053 4000K+R2 0.3870 0.3774 2700K+R2 0.4592 0.4035 4000K+R3 0.3878 0.3769 2700K+R3 0.4598 0.4029 4000K+R4 0.3799 0.3791 2700K+R4 0.4524 0.4062

[0028] In summary, the light-emitting device provided in the embodiment of the present invention includes a deep red light-emitting device 100 and a white light-emitting device. The deep red light-emitting device 100 is configured as a light-emitting chip 10 and a fluorescent layer 20 including deep red light phosphors, so that the deep red light-emitting device 100 emits a wide-band deep red light, supplementing the deep red light (or including part of red light and near-infrared light) that is beneficial to the human eye on the basis of the white light-emitting device, avoiding the use of deep red light chips with multiple wavelengths, thereby reducing the difficulty of production. In addition, the synthetic spectrum of the light-emitting device formed by the deep red light-emitting device 100 and the white light-emitting device has almost no effect on other colors in the visible light range except for the red light that the user has further needs (that is, other spectra below 580 nanometers have almost no change), which can more easily meet the different needs of more users.

[0029] In addition, it can be understood that the aforementioned embodiments are only exemplary descriptions of the present invention. Under the premise that the technical features do not conflict, the structures do not contradict, and the purpose of the present invention is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used in combination.

[0030] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting device, characterized in that: include: Deep red light emitting devices and white light emitting devices; The deep red light emitting device comprises: Light-emitting chip; as well as The fluorescent layer is arranged on the light emitting chip, and the light emitted by the deep red light emitting device has a peak only in the range of 630 to 830 nanometers.

2. The light emitting device according to claim 1, characterized in that: The color coordinates of the light emitted by the light emitting device are close to the color coordinates of the light emitted by the white light emitting device.

3. The light emitting device according to claim 1, characterized in that: The fluorescent layer includes deep red fluorescent powder, and the deep red fluorescent powder is Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr.

4. The light emitting device according to any one of claims 1 to 3, characterized in that: The light emitting chip is a red light chip, and the peak wavelength of the red light chip is between 645 and 675 nanometers.

5. The light emitting device according to any one of claims 3, characterized in that: The light emitting chip is a blue light chip, and the fluorescent layer further comprises: nitride red powder.

6. The light emitting device according to claim 5, characterized in that: The fluorescent layer includes a mixed layer of the nitride red powder and the deep red fluorescent powder.

7. The light emitting device according to claim 5, characterized in that: The fluorescent layer includes a first fluorescent layer and a second fluorescent layer which are stacked, wherein the first fluorescent layer includes the nitride red powder, the second fluorescent layer includes the deep red fluorescent powder, and the second fluorescent layer is arranged on the light-emitting chip, and the first fluorescent layer is arranged on a side of the second fluorescent layer away from the light-emitting chip.

8. The light emitting device according to claim 1, characterized in that: The ratio of the luminous spectrum of the deep red light emitting device below 580 nanometers to the overall luminous spectrum of the deep red light emitting device is less than or equal to 2%.

9. The light emitting device according to claim 1, characterized in that: The intensity value of the light emitted by the deep red light emitting device at a wavelength of 780 nanometers is more than 30% of the peak wavelength intensity value of the light emitted by the deep red light emitting device at 680 to 780 nanometers.

10. A light emitting device, characterized in that: include: Deep red light emitting devices and white light emitting devices; The deep red light emitting device comprises: a light emitting chip; and a fluorescent layer, which is arranged on the light-emitting chip, and the color coordinates of the light emitted by the light-emitting device are close to the color coordinates of the light emitted by the white light-emitting device.

11. A light emitting device, characterized in that: include: Deep red light emitting devices and white light emitting devices; The deep red light emitting device comprises: a light emitting chip; and a fluorescent layer disposed on the light-emitting chip, wherein the ratio of the spectral integrated intensity of the luminous spectrum of the deep red light emitting device in the part less than 580 nanometers to the overall spectral integrated intensity of the deep red light emitting device is less than or equal to 2%.

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