Display device

Abstract

The invention relates to a display device which comprises a substrate, a quantum dot layer, a laser chip, an optical switch, a first waveguide and a second waveguide. The quantum dot layer comprises a plurality of sub-pixels; the laser chip is configured to provide light energy; the optical switch comprises a first input end, a first output end and a second output end, the optical switch is configured to control light energy to be divided into first light energy transmitted to the first output end and second light energy transmitted to the second output end, and the first light energy and the second light energy are the same or different; the first waveguide is at least connected with the first input end and the laser chip, and the second waveguide is connected with the second output end and the sub-pixel. According to the display device, the waveguide is used for transmitting the light emitted by the laser chip to each sub-pixel, the absorption of each sub-pixel to the light energy is controlled through the optical switch, and high-frequency, low-power-consumption and high-brightness display can be achieved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display device. Background Art

[0002] The three major display technologies currently in use include Liquid Crystal Display (LCD), Organic Light-Emitting Diode (OLED), and Micro Light-Emitting Diode Display (Micro LED). LCD display panels have a complex structure and low optical control efficiency of liquid crystals, resulting in poor panel display effects, with obvious deficiencies in contrast, response time, and viewing angle. Although OLED display panels have better display effects, the unstable characteristics of organic materials make them short-lived, with serious problems of screen burn-in and luminous attenuation. Micro LED display panels are the ultimate display technology, but the various process technologies in the industrialization process are not very mature, especially the consistency of RGB LED three-color brightness attenuation and mass transfer technology, which are the main factors limiting the large-scale commercialization of Micro LED. Summary of the invention

[0003] An embodiment of the present application provides a display device, and the display device of the present application can achieve high-frequency, low-power consumption and high-brightness display.

[0004] The present application provides a display device, the display device comprising:

[0005] substrate;

[0006] A quantum dot layer, disposed on one side of the substrate, the quantum dot layer comprising a plurality of sub-pixels;

[0007] at least one laser chip, disposed on one side of the substrate, the laser chip being configured to provide optical energy;

[0008] at least one optical switch, disposed on one side of the substrate, the optical switch at least comprising a first input end, a first output end, and a second output end, the optical switch being configured to control the optical energy to be divided into a first optical energy transmitted to the first output end and a second optical energy transmitted to the second output end, and the first optical energy is the same as or different from the second optical energy;

[0009] at least one first waveguide, disposed on one side of the substrate, the first waveguide at least connecting the first input end and the laser chip; and

[0010] At least one second waveguide is disposed on one side of the substrate, and the second waveguide connects the second output end and the sub-pixel.

[0011] In some embodiments, the display device includes a plurality of the optical switches, the plurality of the optical switches are arranged along a first direction, adjacent optical switches are connected via the first waveguide, and one of the optical switches located at the end is connected to the laser chip via the first waveguide; a plurality of the sub-pixels are arranged along the first direction and are connected to the plurality of the optical switches one-to-one.

[0012] In some embodiments, the display device includes a plurality of the optical switches and a plurality of laser chips, the plurality of the optical switches are arranged in an array along a first direction and a second direction, the plurality of the laser chips are arranged along the second direction, and the first direction and the second direction intersect, wherein, among the plurality of optical switches arranged along the first direction, adjacent optical switches are connected through the first waveguide, and one of the optical switches located at the end is connected to the laser chip; the plurality of sub-pixels are arranged in an array along the first direction and the second direction, and are connected to the plurality of optical switches one-to-one.

[0013] In some embodiments, the display device includes a plurality of driving periods corresponding to the plurality of laser chips, and in each of the driving periods, at least one corresponding laser chip emits the light energy;

[0014] When the laser chip emits the light energy, the first light energy and the second light energy transmitted by the plurality of optical switches connected to the laser chip and arranged along the first direction are both greater than 0;

[0015] Alternatively, the driving period includes multiple sub-driving periods corresponding to the multiple optical switches arranged along the first direction, and in each of the sub-driving periods, the second light energy transmitted by a corresponding one of the optical switches is greater than 0, and the second light energy transmitted by the remaining optical switches is 0.

[0016] In some embodiments, the optical switch includes a first coupler, a second coupler, and a modulator connected between the first coupler and the second coupler, wherein the first coupler includes the first input end, the first input end is connected to the first waveguide, the second coupler includes the first output end and the second output end, the first output end is connected to the first waveguide, and the second output end is connected to the second waveguide, and the modulator is configured to phase modulate the light beam output by the first coupler.

[0017] In some embodiments, the modulator includes at least a third waveguide and a fourth waveguide, one end of the third waveguide is connected to the first coupler, and the other end is connected to the second coupler, one end of the fourth waveguide is connected to the first coupler, and the other end is connected to the second coupler; wherein, when the phase difference between the light beams in the third waveguide and the fourth waveguide is 0, the light passing through the modulator is output from the first output end, and when the phase difference between the light beams in the third waveguide and the fourth waveguide is π, the light passing through the modulator is output from the second output end.

[0018] In some embodiments, the display device also includes a driving circuit layer, which is disposed on the substrate and located on one side of the quantum dot layer; the modulator also includes at least one modulation electrode, which is located on at least one side of the third waveguide and / or the fourth waveguide, and the modulation electrode is electrically connected to the driving circuit layer.

[0019] In some embodiments, the driving circuit layer includes a thin film transistor, a common electrode and an electrical signal output port, and the electrical signal output port is connected to the thin film transistor; wherein the electrical signal output port includes a current output port and / or a voltage output port.

[0020] In some embodiments, the modulator includes at least one first modulation electrode, the first modulation electrode is located on one side of the third waveguide and / or the fourth waveguide, one end of the first modulation electrode is connected to the current output port, and the other end is connected to the common electrode.

[0021] In some embodiments, the modulator includes at least one second modulation electrode and at least one third modulation electrode, the second modulation electrode and the third modulation electrode are located on opposite sides of the third waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode;

[0022] And / or, the second modulation electrode and the third modulation electrode are located on opposite sides of the fourth waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode.

[0023] The present application provides a display device, which uses a waveguide to transmit light emitted by a laser chip to a quantum dot layer, and each sub-pixel of the quantum dot layer converts the received light energy into corresponding visible light to realize the display device to emit light; at the same time, an optical switch is provided between the laser chip of the present application and each sub-pixel, and the optical switch can divide the light energy emitted by the laser chip into a first light energy transmitted to a first output end and a second light energy transmitted to a second output end, and the second energy light is transmitted to the corresponding sub-pixel through a second waveguide to realize the corresponding sub-pixel to emit light, and the optical switch controls the size of the first light energy and the second light energy to control the absorption of light energy by each sub-pixel, thereby realizing the brightness consistency of each sub-pixel. Therefore, the display device of the present application can realize high-frequency, low-power consumption, and high-brightness display. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0025] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0026] Figure 1 is a schematic diagram of a single-row pixel structure of a display device provided in an embodiment of the present application;

[0027] Figure 2 is an enlarged schematic diagram of a local structure of a display device provided in an embodiment of the present application;

[0028] Figure 3 yes Figure 2 Schematic diagram of CC cross section;

[0029] Figure 4 yes Figure 2 One of the AA cross-sectional diagrams;

[0030] Figure 5 yes Figure 2 Another AA cross-sectional schematic diagram of ;

[0031] Figure 6 yes Figure 2 BB cross-sectional diagram;

[0032] Figure 7 is a cross-sectional schematic diagram of one of the display devices provided in the embodiments of the present application;

[0033] Figure 8is a plan view of an optical switch of a display device provided in an embodiment of the present application;

[0034] Fig. 9 yes Figure 8 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0035] Fig.10 is a plan view of an optical switch of a display device provided in an embodiment of the present application;

[0036] Fig.11 yes Fig.10 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0037] Fig.12 yes Fig.10 A cross-sectional schematic diagram of another display device provided in an embodiment;

[0038] Fig.13 is a plan view of an optical switch of a display device provided in an embodiment of the present application;

[0039] Fig.14 yes Fig.13 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0040] Fig.15 is a schematic diagram of a pixel array structure of a display device provided in an embodiment of the present application;

[0041] Fig.16 is a schematic diagram of a pixel array structure of another display device provided in an embodiment of the present application;

[0042] Fig.17 yes Fig.16 A timing diagram provided by an embodiment;

[0043] Fig.18 yes Fig.16 Another timing diagram provided by the embodiment.

[0044] Description of reference numerals:

[0045] 100, substrate; 200, driving circuit layer; 210, common electrode; 220, voltage output port; 230, current output port; 300, quantum dot layer; 310, sub-pixel; 311, red sub-pixel; 312, blue sub-pixel; 313, green sub-pixel; 320, retaining wall; 330, second packaging layer; 400, laser chip structure; 401, first packaging layer; 410, laser chip; 4101, laser chip substrate; 4102, laser chip N electrode; 4103, Laser generating structure; 4104, laser chip P electrode; 420, first waveguide; 430, optical switch; 4301, first input end; 4302, first output end; 4303, second output end; 431, first coupler; 432, modulator; 4321, third waveguide; 4322, fourth waveguide; 4323, modulation electrode; 4324, first modulation electrode; 4325, second modulation electrode; 4326, third modulation electrode; 433, second coupler; 440, second waveguide. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0047] This application provides a display device, please refer to Figure 1-Figure 6 The display device includes a substrate 100, a quantum dot layer 300, at least one laser chip 410, at least one first waveguide 420, at least one optical switch 430, and at least one second waveguide 440. The quantum dot layer 300 is disposed on one side of the substrate 100, and includes a plurality of sub-pixels 310; the laser chip 410 is disposed on one side of the substrate 100, and the laser chip 410 is configured to provide light energy; the optical switch 430 is disposed on one side of the substrate 100, and includes a first input end 4301, a first output end 4302, and a second output end 4303, and the optical switch 430 is configured to control the light energy to be divided into a first light energy transmitted to the first output end 4302 and a second light energy transmitted to the second output end 4303, and the first light energy is the same as or different from the second light energy; the first waveguide 420 at least connects the first input end 4301 and the laser chip 410, and the second waveguide 440 connects the second output end 4303 and the sub-pixel 310.

[0048] In the present application, the substrate 100 may be a flexible substrate, such as polyimide (PI), or a rigid substrate, such as glass, which is not limited here.

[0049] In this application, please refer to Figure 6 , the quantum dot layer 300 includes a plurality of sub-pixels 310 arranged at intervals, and a retaining wall 320 is also provided around each sub-pixel, and the retaining wall 320 is used to limit the range of the sub-pixel 310. In the present application, the quantum dot layer 300 may include at least one of red quantum dots, green quantum dots and blue quantum dots. The material of the quantum dot layer 300 of the present application is a photoluminescent material, and the principle of photoluminescence is used to transmit the light emitted by the laser chip 410 to the sub-pixel 310. After the quantum dot material of the sub-pixel 310 absorbs the light energy, an energy level transition process occurs, and finally the absorbed light energy is converted into at least one of the corresponding red light, green light and blue light, thereby realizing the picture display of the display device.

[0050] In this application, please refer to Figure 3 , the laser chip 410 acts as a light energy source to provide light energy for the sub-pixels. Since the laser energy can be modulated at high frequency, the laser chip 410 can generate light of different energies through modulation to meet the light energy required by sub-pixels 310 of different colors or different numbers of sub-pixels 310. Further, the laser chip 410 includes a laser chip substrate 4101, a laser chip N electrode 4102, a laser generating structure 4103, and a laser chip P electrode 4104, which are sequentially stacked along the thickness direction of the substrate, but are not limited thereto.

[0051] In the present application, the first waveguide 420 and the second waveguide 440 are both optical waveguides, which can guide the light waves emitted by the laser chip 410 to propagate therein. Since the waveguide can transmit light with low loss and quickly, the light energy emitted by the laser chip 410 can be quickly transmitted to each sub-pixel 310 through the waveguide to achieve a complete picture display of the display device.

[0052] In this application, please refer to Figure 2The optical switch 430 is used to control the amount of light energy absorbed by each sub-pixel 310. For example, the optical switch 430 can be controlled to make the laser chip 410 transmit different light energies to the sub-pixels 310 of different colors, so that the brightness of the sub-pixels 310 of each color is consistent, and the brightness attenuation consistency of the sub-pixels 310 of different colors is ensured. Specifically, the optical switch 430 can be used to control the red sub-pixel, the green sub-pixel, and the blue sub-pixel to absorb different light energies, so as to achieve the consistency of the brightness of the red sub-pixel, the green sub-pixel, and the blue sub-pixel. Among them, the optical switch 430 can divide the light energy transmitted by the laser chip 410 into a first light energy transmitted to the first output end 4302 and a second light energy transmitted to the second output end 4303. The second light energy transmitted to the second output end 4303 is transmitted to the corresponding sub-pixel 310 via the second waveguide 440, wherein the first light energy can be greater than the second light energy, or the first light energy can be less than the second light energy, or the first light energy can be equal to the second light energy, and the first light energy or the second light energy can be 0. The present application can control the size of the first light energy and the second light energy through the optical switch 430, so that different sub-pixels 310 can absorb different light energies.

[0053] In the present application, the combination of the laser chip 410 and the optical switch 430 as well as the first waveguide 420 and the second waveguide 440 can realize high-frequency, low-power consumption and high-brightness display.

[0054] For further information, please refer to Figure 4-Figure 5 The display device further includes a first packaging layer 401, which covers the laser chip 410, the first waveguide 420, the optical switch 430 and the second waveguide 440 to protect them.

[0055] In some embodiments, please refer to Figure 5 The display device further includes a driving circuit layer 200, which is disposed on the substrate 100 and located on one side of the quantum dot layer 300. The driving circuit layer 200 includes a plurality of thin film transistors, a common electrode 210, and other metal wirings. Among them, the plurality of thin film transistors correspond to the plurality of sub-pixels 310 one by one, and the thin film transistor includes a gate, a semiconductor layer, a source and a drain, and an insulating layer located between the above film layers. The stacking structure of each film layer of the thin film transistor can refer to the prior art and is not specifically limited here.

[0056] In this application, please refer to Figure 5 , the laser chip 410, the optical switch 430, the first waveguide 420 and the second waveguide 440 may be located on a side of the driving circuit layer 200 away from the substrate 100; please refer to Figure 7 The laser chip 410, the optical switch 430, the first waveguide 420 and the second waveguide 440 may be located between the driving circuit layer 200 and the substrate 100, which is not limited herein.

[0057] In some embodiments, please refer to Figure 1 Taking a single row of sub-pixels as an example, the multiple sub-pixels 310 are arranged at intervals along the first direction X, that is, they are arranged in rows along the first direction X; accordingly, the multiple optical switches 430 are arranged at intervals along the first direction X, and adjacent optical switches 430 are connected through the first waveguide 420, and one of the optical switches 430 located at the end is connected to the laser chip 410 through the first waveguide 420, that is, the laser chip 410 and the multiple optical switches 430 are connected in series through the first waveguide 420, and the laser chip 410 is located at the end; wherein, the multiple sub-pixels 310 correspond to the multiple optical switches 430 one by one, that is, one sub-pixel 310 is connected to one optical switch 430 through one second waveguide 440. In this embodiment, a laser chip 410 can provide light energy for multiple sub-pixels 310. A light switch 430 is set corresponding to each sub-pixel 310. Each light switch 430 controls the amount of second light energy transmitted to the corresponding sub-pixel 310 to control the amount of light energy absorbed by each sub-pixel 310, thereby achieving independent lighting of each sub-pixel 310 in a row of sub-pixels 310.

[0058] In this application, please refer to Figure 2 The optical switch 430 includes a first input end 4301, a first output end 4302, and a second output end 4303. The first input end 4301 is connected to the first waveguide 420, the first output end 4302 is connected to the first waveguide 420, and the second output end 4303 is connected to the second waveguide 440. The light emitted by the laser chip 410 enters the optical switch 430 through the first input end 4301. Through the modulation of the optical switch 430, the light can be output from the second output end 4303 and transmitted to the corresponding sub-pixel 310 through the second waveguide 440, so that the sub-pixel 310 emits light; when the optical switch 430 is not modulated, the light emitted by the laser chip 410 is directly output from the first output end 4302, enters the first waveguide 420 connected to the first output end 4302, and continues to be transmitted.

[0059] In some embodiments, please refer to Figure 2 The optical switch 430 includes a first coupler 431, a second coupler 433, and a modulator 432 connected between the first coupler 431 and the second coupler 433, wherein the first coupler 431 includes a first input end 4301, the first input end 4301 is connected to the first waveguide 420, the second coupler 433 includes a first output end 4302 and a second output end 4303, the first output end 4302 is connected to the first waveguide 420, and the second output end 4303 is connected to the second waveguide 440, and the modulator 432 is configured to control the amount of light energy transmitted from the laser chip 410 to the sub-pixel 310.

[0060] For further information, please refer to Figure 2 , the modulator 432 at least includes a third waveguide 4321 and a fourth waveguide 4322, one end of the third waveguide 4321 is connected to the first coupler 431, and the other end is connected to the second coupler 433, one end of the fourth waveguide 4322 is connected to the first coupler 431, and the other end is connected to the second coupler 433, and the third waveguide 4321 and the fourth waveguide 4322 are arranged in parallel. The first coupler 431 can split the light input from the first input end 4301 into the third waveguide 4321 and the fourth waveguide 4322 for transmission, and by modulating the phase difference of the light beam in the third waveguide 4321 and the fourth waveguide 4322, the light passing through the modulator 432 can be controlled to be output from the first output end 4302 or the second output end 4303 of the second coupler 433. In some other embodiments, the modulator 432 may also include a fifth waveguide, a sixth waveguide, or more waveguides, whose performance is the same as that of the third waveguide 4321 and the fourth waveguide 4322, which will not be repeated here.

[0061] For details, please refer to Figure 2 The light output by the laser chip 410 is transmitted to the first input end 4301 of the first coupler 431 through the first waveguide 420. The first coupler 431 can be a 1*2 multimode interference coupler (1 represents the number of input waveguides, and 2 represents the number of output waveguides), which can divide a beam of light transmitted by the laser chip 410 into two beams of light with the same energy and a phase of π / 2. The two beams of light enter the third waveguide 4321 and the fourth waveguide 4322 respectively, and are transmitted to the second coupler 433. The second coupler 433 can be a 2*2 multimode interference coupler (2 represents the number of input waveguides, and 2 represents the number of output waveguides), which can combine the light in the third waveguide 4321 and the fourth waveguide 4322 and output them from the first output end 4302 or the second output end 4303 of the second coupler 433. Among them, when the modulator 432 is not adjusted, two beams of light with the same energy and a phase of π / 2 are combined by the second coupler 433 and output from the first output end 4302, that is, the phase difference between the light beams in the third waveguide 4321 and the fourth waveguide 4322 is 0; when the modulator 432 is adjusted, the phase of the light wave in the third waveguide 4321 and / or the fourth waveguide 4322 can be adjusted. When the phase difference between the light beams in the third waveguide 4321 and the fourth waveguide 4322 is π, the light passing through the modulator 432 is output from the second output end 4303 and transmitted to the corresponding sub-pixel 310 through the second waveguide 440.

[0062] Since the waveguide is sensitive to external factors such as temperature and pressure, the refractive index of the waveguide can be changed by changing the temperature or pressure, thereby modulating the phase of the light wave transmitted in the waveguide. The modulator 432 of the present application can achieve its phase modulation function through thermal modulation or voltage modulation.

[0063] In some embodiments, please refer to Figure 2 , Figure 4 and Figure 5 The modulator 432 further includes at least one modulation electrode 4323, which is located on at least one side of the third waveguide 4321 or the fourth waveguide 4322, for example, on the upper side, the lower side, the left side or the right side of the third waveguide 4321 or the fourth waveguide 4322. The modulation electrode 4323 can be used as a resistor. When a current passes through the modulation electrode 4323, the modulation electrode 4323 can generate heat. The heat generated by the modulation electrode 4323 can change the refractive index of the material of the third waveguide 4321 or the fourth waveguide 4322, thereby changing the phase difference of the light beams in the third waveguide 4321 and the fourth waveguide 4322. The modulation electrode 4323 can also be used as an electrode, so that the third waveguide 4321 or the fourth waveguide 4322 is located between the electric field generated by the electrode, and the refractive index of the material of the third waveguide 4321 or the fourth waveguide 4322 is changed by using the electric field, thereby changing the phase difference of the light beams in the third waveguide 4321 and the fourth waveguide 4322.

[0064] In some embodiments, the modulation electrode 4323 can be electrically connected to the driving circuit layer 200. For example, the modulation electrode 4323 can be connected to the thin film transistor on the driving circuit layer 200. The thin film transistor is used to provide current or voltage to the modulation electrode 4323, and the magnitude of the provided current or voltage is controlled by the thin film transistor to achieve different modulations of the optical switches 430 corresponding to different sub-pixels 310, so that different sub-pixels 310 absorb different amounts of light energy.

[0065] Furthermore, the driving circuit layer 200 also includes an electrical signal output port, which is connected to the thin film transistor. Specifically, the electrical signal output port includes a current output port 230 and / or a voltage output port 220, and the current output port 230 and the voltage output port 220 are connected to the thin film transistor, and are used to connect to the modulation electrode 4323, so that the thin film transistor can provide current or voltage to the modulation electrode 4323.

[0066] In other embodiments, the display device may not be provided with the driving circuit layer 200, and the modulation electrode 4323 may also be modulated by an external circuit board.

[0067] In one embodiment, please refer to Figure 8-Figure 9The modulator 432 includes a first modulation electrode 4324 , which is located on one side of the third waveguide 4321 , one end of the first modulation electrode 4324 is connected to the current output port 230 on the driving circuit layer 200 , and the other end is connected to the common electrode 210 on the driving circuit layer 200 . This embodiment is a thermal modulation method. When the current output by the thin film transistor is transmitted to the first modulation electrode 4324 through the current output port 230, the first modulation electrode 4324 acts as a resistor element. Heat is generated when the current passes through the first modulation electrode 4324. The heat generated by the first modulation electrode 4324 can change the refractive index of the material of the third waveguide 4321, thereby changing the phase of the light beam in the third waveguide 4321, so that a phase difference is formed between the light beams in the third waveguide 4321 and the fourth waveguide 4322. When the phase difference between the light beams in the two waveguides is π, the light beams in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the second output end 4303, and are transmitted to the corresponding sub-pixel 310 through the second waveguide 440 to realize the light emission of the sub-pixel 310. When the thin film transistor does not output current to the current output port 230, the phase of the light beam in the third waveguide 4321 does not change, and is the same as the phase of the light beam in the fourth waveguide 4322, which is π / 2. The two light beams with the same phase in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the first output end 4302.

[0068] In other embodiments, the first modulation electrode 4324 may also be located on one side of the fourth waveguide 4322, and its structure and principle are similar to those described above. Figure 8 The corresponding embodiments are the same and will not be described again here.

[0069] In one embodiment, please refer to Figure 10-12 , the modulator 432 may include two or more first modulation electrodes 4324. Taking the modulator 432 including two first modulation electrodes 4324 as an example, the two first modulation electrodes 4324 are respectively located on one side of the third waveguide 4321 and the fourth waveguide 4322, and one end of each first modulation electrode 4324 is connected to the current output port 230 on the driving circuit layer 200, and the other end is connected to the common electrode 210 on the driving circuit layer 200. In this embodiment, the structure and principle of the modulator 432 are similar to those of Figure 8 The corresponding embodiments are the same, and the only difference is that, in this embodiment, the third waveguide 4321 and the fourth waveguide 4322 are both thermally modulated by the first modulation electrode 4324, so that the phases of the light beams in the third waveguide 4321 and the fourth waveguide 4322 are changed.

[0070] For further information, please refer to Figure 8 and Fig.10The first modulation electrode 4324 may be in a zigzag shape, such as an arcuate shape. By increasing the length of the first modulation electrode 4324, the resistance of the first modulation electrode 4324 may be increased, more heat may be generated, and the phase modulation efficiency of the first modulation electrode 4324 may be improved. In other embodiments, the first modulation electrode 4324 may also be a linear, curved, or block-shaped electrode, which is not limited here.

[0071] Furthermore, the first modulation electrode 4324 may be located on one side of the third waveguide 4321 or the fourth waveguide 4322 in the third direction Z to increase the coverage area of ​​the first modulation electrode 4324 on the third waveguide 4321 or the fourth waveguide 4322 and improve the modulation efficiency of the first modulation electrode 4324. The third direction Z is a direction perpendicular to the substrate 100.

[0072] In one embodiment, please refer to Figure 13-14 The modulator 432 includes a second modulation electrode 4325 and a third modulation electrode 4326, and the second modulation electrode 4325 and the third modulation electrode 4326 are located on opposite sides of the third waveguide 4321, for example, on opposite sides of the third waveguide 4321 in a second direction Y, wherein the second direction Y is a direction parallel to the substrate 100, and one of the second modulation electrode 4325 and the third modulation electrode 4326 is connected to the voltage output port 220, and the other is connected to the common electrode 210. This embodiment is a voltage modulation method. When the output voltage of the thin film transistor is transmitted to the second modulation electrode 4325 through the voltage output port 220, a voltage difference is formed between the second modulation electrode 4325 and the third modulation electrode 4326. Under the action of the electric field between the second modulation electrode 4325 and the third modulation electrode 4326, the refractive index of the material of the third waveguide 4321 changes, and then the phase of the light wave in the third waveguide 4321 changes, so that the light beams in the third waveguide 4321 and the fourth waveguide 4322 form a phase difference. When the phase difference of the light beams in the two waveguides is π, the light beams in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the second output end 4303, and are transmitted to the corresponding sub-pixel 310 through the second waveguide 440 to realize the light emission of the sub-pixel 310. When the thin film transistor does not output voltage to the voltage output port 220, the phase of the light beam in the third waveguide 4321 does not change, and is the same as the phase of the light beam in the fourth waveguide 4322, which is π / 2. The two light beams with the same phase in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the first output end 4302.

[0073] In one embodiment, please refer to Figure 2 , Figure 4 and Figure 5, the modulator 432 may include a plurality of second modulation electrodes 4325 and a plurality of third modulation electrodes 4326. Taking the modulator 432 including two second modulation electrodes 4325 and two third modulation electrodes 4326 as an example, one pair of the second modulation electrodes 4325 and the third modulation electrodes 4326 are located on opposite sides of the third waveguide 4321, and the other pair of the second modulation electrodes 4325 and the third modulation electrodes 4326 are located on opposite sides of the fourth waveguide 4322, one of the second modulation electrodes 4325 and the third modulation electrodes 4326 is connected to the common electrode 210, and the other is connected to the voltage output port 220. In this embodiment, the structure and principle of the modulator 432 are similar to those of the embodiment of the present invention. Fig.13 The corresponding embodiments are the same, and the only difference is that, in this embodiment, the third waveguide 4321 and the fourth waveguide 4322 are voltage modulated by the second modulation electrode 4325 and the third modulation electrode 4326, so that the phases of the light beams in the third waveguide 4321 and the fourth waveguide 4322 are changed.

[0074] In the present application, different modulation modes are related to the material of the waveguide. When thermal modulation is used, the materials of the third waveguide 4321 and the fourth waveguide 4322 can be silicon-based or SiN-based materials; when voltage modulation is used, the materials of the third waveguide 4321 and the fourth waveguide 4322 can be lithium niobate materials.

[0075] In an embodiment of the present application, a row of sub-pixels 310 may include a plurality of sub-pixels 310 of different colors. For example, a row of sub-pixels 310 may be formed by sequentially arranging red sub-pixels 311, blue sub-pixels 312, and green sub-pixels 313, and adjacent red sub-pixels 311, blue sub-pixels 312, and green sub-pixels 313 constitute a pixel unit. Since the light energy required for the red sub-pixel 311, the blue sub-pixel 312, and the green sub-pixel 313 to emit light is different, the present application uses the laser chip 410 as a light energy source and uses the optical switch 430 to control the absorption of light energy by each sub-pixel 310. The quantum dot material of the sub-pixel 310 converts the received light energy into red, green, and blue (R, G, B) visible light, wherein the thin film transistor can provide a modulated driving voltage or current for the corresponding optical switch 430, and the modulation timing of the laser chip 410 is matched with the control timing of the optical switch 430 to achieve independent control of the brightness of each sub-pixel.

[0076] In some embodiments, please refer to Fig.15The display device includes a pixel array, and a plurality of sub-pixels 310 are arranged in an array along a first direction X and a second direction Y, that is, they are arranged in rows along the first direction X and arranged in columns along the second direction Y, the first direction X and the second direction Y intersect, and further the first direction X and the second direction Y may be perpendicular; accordingly, a plurality of optical switches 430 are arranged in an array along the first direction X and the second direction Y, wherein, among the plurality of optical switches 430 arranged along the first direction X, adjacent optical switches 430 are connected through a first waveguide 420, and one of the optical switches 430 located at the end is connected to a laser chip 410, and the plurality of sub-pixels 310 correspond to the plurality of optical switches 430 one by one, that is, one sub-pixel 310 is connected to one optical switch 430 through one second waveguide 440; the plurality of laser chips 410 are arranged along the second direction Y, and one laser chip 410 corresponds to one row of sub-pixels. In this embodiment, the display device includes a plurality of laser chips 410, and one laser chip 410 provides light energy for a row of sub-pixels 310. In this embodiment, the laser chips 410, the optical switches 430 and the sub-pixels 310 of each row are connected to the above-mentioned Figure 1 The structures and principles of the corresponding embodiments are the same, and will not be described one by one here. In this embodiment, multiple rows of sub-pixels 310 and multiple laser chips 410 are arrayed, so that each sub-pixel 310 in a plane can be independently lit to achieve the overall display effect of the plane. For example, by the laser chips 410 of each row working together, and the modulation electrodes 4323 of each optical switch 430 are controlled by corresponding thin film transistors, the light modulation timing of the laser chip 410 is matched with the modulation timing of the optical switch 430 controlled by the thin film transistor active matrix, and the complete display of the picture can be achieved.

[0077] In some embodiments, the display device includes a plurality of driving periods corresponding to a plurality of laser chips 410, and in each driving period, at least one corresponding laser chip 410 emits the light energy; when the laser chip 410 emits light energy, the first light energy and the second light energy transmitted by the plurality of optical switches 430 connected to the laser chip 410 and arranged along the first direction X are both greater than 0, that is, the first output end 4302 and the second output end 4303 both have light energy output. For example, the laser chip 410 modulates and outputs the total energy light required by all sub-pixels 310 in each row in a driving period (such as a frame time), and the thin film transistor driving array outputs the modulation signal of the optical switch 430 corresponding to each sub-pixel 310, and the total light energy is distributed by modulating the optical switches 430 of all sub-pixels 310 in this row differently, and the different input of light energy of each sub-pixel 310 is realized, so as to realize the independent control of the brightness of each sub-pixel.

[0078] For details, please refer to Fig.16 and Fig.17 , Fig.17 for Fig.16A timing diagram of a pixel array structure, where: Fig.17 Y1 and Y2 refer to the pulse waveforms output by the laser chip, X1-1, X1-2, X1-3...X1-n refer to the pulse waveforms of the optical switches corresponding to the sub-pixels in the first row, and X2-1, X2-2, X2-3...X2-n refer to the pulse waveforms of the optical switches corresponding to the sub-pixels in the second row. Fig.17 The height of the waveform of the optical switch indicates the degree of opening of the second output terminal of the optical switch, and the width of the waveform indicates the opening time of the second output terminal of the optical switch. The waveform of each optical switch is consistent with the voltage / current output waveform of its corresponding thin film transistor. Fig.17 It can be seen that in one driving period, the laser chip Y1 outputs the total energy required for all sub-pixels in the first row, and controls the opening degree of the second output end of the corresponding optical switch X1-1, X1-2, X1-3...X1-n through the corresponding thin film transistor of each sub-pixel, so that the second energy transmitted to each sub-pixel in the first row is different, so as to achieve independent control of the brightness of each sub-pixel in the first row. Similarly, in another driving period, the laser chip Y2 outputs the total energy required for all sub-pixels in the second row, and controls the opening degree of the second output end of the corresponding optical switch X2-1, X2-2, X2-3...X2-n through the corresponding thin film transistor of each sub-pixel, so as to achieve different second energy transmitted to each sub-pixel in the second row, so as to achieve independent control of the brightness of each sub-pixel in the second row.

[0079] In some embodiments, the display device includes a plurality of driving periods corresponding to a plurality of laser chips 410, and in each driving period, at least one corresponding laser chip 410 emits the light energy; each driving period includes a plurality of sub-driving periods corresponding to a plurality of optical switches 430 arranged along the first direction, and in each sub-driving period, the second light energy transmitted by a corresponding optical switch 430 is greater than 0, and the second light energy transmitted by the remaining optical switches 430 is 0, that is, in a sub-driving period, only the light energy of one optical switch 430 is output from the second output terminal 4303, and the light energy of the remaining optical switches 430 is output from the first output terminal 4302. For example, in a driving period (such as a frame time), the laser chip 410 sequentially outputs the light energy required by each sub-pixel 310 from left to right through modulation, and at the same time, the modulation signal of the optical switch 430 corresponding to each sub-pixel 310 in the row is output through the thin film transistor driving array, so that the optical switches 430 are sequentially turned on from left to right, realizing different inputs of light energy of each sub-pixel 310, so as to realize independent control of the brightness of each sub-pixel.

[0080] For details, please refer to Fig.16 and Fig.18 , Fig.18 for Fig.16Another timing diagram of the pixel array structure, where Fig.18 Y1 and Y2 refer to the pulse waveforms output by the laser chip, X1-1, X1-2, X1-3...X1-n refer to the pulse waveforms of the optical switches corresponding to the sub-pixels in the first row, and X1-1, X2-2, X2-3...X2-n refer to the pulse waveforms of the optical switches corresponding to the sub-pixels in the second row. Fig.18 The high waveform of the optical switch indicates that the second output end of the optical switch is turned on, and the low waveform indicates that the second output end of the optical switch is turned off. The width of the waveform indicates the turn-on time of the second output end of the optical switch. The waveform of each optical switch is consistent with the voltage / current output waveform of its corresponding thin film transistor. Fig.18 It can be seen that each driving period includes a plurality of sub-driving periods. In a driving period, the laser chip Y1 outputs light energy, and the corresponding thin film transistors of each sub-pixel control the second output ends of the corresponding optical switches X1-1, X1-2, X1-3...X1-n to be turned on in different sub-driving periods, respectively, so that X1-1, X1-2, X1-3...X1-n are turned on in sequence from left to right along the first direction, so that the second energy transmitted to each sub-pixel in the first row is different, so as to achieve independent control of the brightness of each sub-pixel in the first row. Similarly, in a driving period, the laser chip Y2 outputs light energy, and the corresponding thin film transistors of each sub-pixel control the second output ends of the corresponding optical switches X2-1, X2-2, X2-3...X2-n to be turned on in different sub-driving periods, respectively, so that the second energy transmitted to each sub-pixel in the second row is different, so as to achieve independent control of the brightness of each sub-pixel in the second row.

[0081] The present application also provides a method for preparing a display device, comprising:

[0082] S1, providing a substrate 100;

[0083] The substrate 100 may be a flexible substrate or a rigid substrate.

[0084] S2, forming a first waveguide 420, a second waveguide 440 and a plurality of optical switches 430 on the substrate 100, and forming a first packaging layer 401 on the first waveguide 420, the second waveguide 440 and the plurality of optical switches 430, wherein adjacent optical switches 430 are connected via the first waveguide 420, and the sub-pixel 310 is connected to the optical switch 430 via the second waveguide 440;

[0085] Among them, the optical switch 430 includes a first coupler 431, a second coupler 433, and a third waveguide 4321 and a fourth waveguide 4322 located between the first coupler 431 and the second coupler 433; the materials of the first waveguide 420, the second waveguide 440, the third waveguide 4321 and the fourth waveguide 4322 include silicon-based, SiN-based, lithium niobate, etc.; the material of the first packaging layer 401 can be at least one of an inorganic packaging material or an organic packaging material.

[0086] S3, forming a driving circuit layer 200 on a side of the first encapsulation layer 401 away from the substrate 100;

[0087] The driving circuit layer 200 includes a thin film transistor, a common electrode 210 , a voltage output port 220 and a current output port 230 .

[0088] S4, forming a quantum dot layer 300 on a side of the driving circuit layer 200 away from the first encapsulation layer 401, wherein the quantum dot layer 300 includes a plurality of sub-pixels 310 arranged at intervals;

[0089] The steps of forming the sub-pixel 310 specifically include:

[0090] A retaining wall 320 is formed on one side of the driving circuit layer 200 away from the first encapsulation layer 401, wherein the retaining wall 320 has a plurality of pixel openings arranged at intervals, and sub-pixels 310 are formed in the pixel openings, and then a second encapsulation layer 330 covering the sub-pixels 310 and the retaining wall 320 is formed;

[0091] The material of the quantum dot layer 300 includes quantum dot materials, such as red quantum dot materials, green quantum dot materials, and blue quantum dot materials; the material of the second encapsulation layer 330 can be at least one of an inorganic encapsulation material or an organic encapsulation material.

[0092] S5 . Bonding the laser chip 410 at the end of each row of optical switches 430 , wherein the laser chip 410 is connected to the optical switch 430 at the end of each row through the first waveguide 420 .

[0093] S6. Form a third packaging layer above the quantum dot layer 300, the laser chip 410, the optical switch 430, the first waveguide 420 and the second waveguide 440 to package the above structure as a whole.

[0094] The material of the third encapsulation layer may be at least one of an inorganic encapsulation material and an organic encapsulation material.

[0095] In the above-mentioned method for manufacturing the display device, the preparation order of step S2 and step S3 can be exchanged, so that the first waveguide 420, the second waveguide 440 and the optical switch 430 are formed on the side of the driving circuit layer 200 away from the substrate 100, which can be referred to Figure 5and Fig.14 structure.

[0096] The present application provides a display device, which uses a waveguide to transmit light emitted by a laser chip to a quantum dot layer, and each sub-pixel of the quantum dot layer converts the received light energy into corresponding visible light to realize the display device to emit light; at the same time, an optical switch is provided between the laser chip of the present application and each sub-pixel, and the optical switch can divide the light energy emitted by the laser chip into a first light energy transmitted to a first output end and a second light energy transmitted to a second output end, and the second energy light is transmitted to the corresponding sub-pixel through a second waveguide to realize the corresponding sub-pixel to emit light, and the optical switch controls the size of the first light energy and the second light energy to control the absorption of light energy by each sub-pixel, thereby realizing the brightness consistency of each sub-pixel. Therefore, the display device of the present application can realize high-frequency, low-power consumption, and high-brightness display.

[0097] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0098] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0099] The embodiments, implementation methods and related technical features of the present application can be combined and replaced with each other without conflict.

[0100] The above are only preferred embodiments of the present application and do not constitute any form of limitation to the present application. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of the technical solution of the present application.

Claims

1. A display device, characterized in that: include: substrate; A quantum dot layer, disposed on one side of the substrate, the quantum dot layer comprising a plurality of sub-pixels; at least one laser chip, disposed on one side of the substrate, the laser chip being configured to provide optical energy; at least one optical switch, disposed on one side of the substrate, the optical switch at least comprising a first input end, a first output end, and a second output end, the optical switch being configured to control the optical energy to be divided into a first optical energy transmitted to the first output end and a second optical energy transmitted to the second output end, and the first optical energy is the same as or different from the second optical energy; at least one first waveguide, disposed on one side of the substrate, the first waveguide at least connecting the first input end and the laser chip; and At least one second waveguide is disposed on one side of the substrate, and the second waveguide connects the second output end and the sub-pixel.

2. The display device according to claim 1, characterized in that The display device comprises a plurality of optical switches, the plurality of optical switches are arranged along a first direction, adjacent optical switches are connected via the first waveguide, and one of the optical switches located at an end is connected to the laser chip via the first waveguide; The plurality of sub-pixels are arranged along the first direction and are connected to the plurality of light switches in a one-to-one correspondence.

3. The display device according to claim 1, characterized in that The display device comprises a plurality of optical switches and a plurality of laser chips, wherein the plurality of optical switches are arranged in an array along a first direction and a second direction, and the plurality of laser chips are arranged along the second direction, and the first direction and the second direction intersect; Among the plurality of optical switches arranged along the first direction, adjacent optical switches are connected via the first waveguide, and one of the optical switches located at the end is connected to the laser chip; The plurality of sub-pixels are arranged in an array along the first direction and the second direction, and are connected to the plurality of optical switches in a one-to-one correspondence.

4. The display device according to claim 1, characterized in that The display device includes a plurality of driving time periods corresponding to the plurality of laser chips, and in each of the driving time periods, at least one corresponding laser chip emits the light energy; When the laser chip emits the light energy, the first light energy and the second light energy transmitted by the plurality of optical switches connected to the laser chip and arranged along the first direction are both greater than 0; Alternatively, the driving period includes multiple sub-driving periods corresponding to the multiple optical switches arranged along the first direction, and in each of the sub-driving periods, the second light energy transmitted by a corresponding one of the optical switches is greater than 0, and the second light energy transmitted by the remaining optical switches is 0.

5. The display device according to any one of claims 1 to 4, characterized in that: The optical switch includes a first coupler, a second coupler, and a modulator connected between the first coupler and the second coupler, wherein the first coupler includes the first input end, the first input end is connected to the first waveguide, the second coupler includes the first output end and the second output end, the first output end is connected to the first waveguide, and the second output end is connected to the second waveguide, and the modulator is configured to phase modulate the light beam output by the first coupler.

6. The display device according to claim 5, characterized in that: The modulator at least comprises a third waveguide and a fourth waveguide, one end of the third waveguide is connected to the first coupler, and the other end is connected to the second coupler, and one end of the fourth waveguide is connected to the first coupler, and the other end is connected to the second coupler; When the phase difference between the light beams in the third waveguide and the fourth waveguide is 0, the light passing through the modulator is output from the first output end; and when the phase difference between the light beams in the third waveguide and the fourth waveguide is π, the light passing through the modulator is output from the second output end.

7. The display device according to claim 6, characterized in that: The display device further comprises a driving circuit layer, which is disposed on the substrate and located on one side of the quantum dot layer; The modulator further includes at least one modulation electrode, wherein the modulation electrode is located on at least one side of the third waveguide and / or the fourth waveguide, and the modulation electrode is electrically connected to the driving circuit layer.

8. The display device according to claim 7, characterized in that: The driving circuit layer includes a thin film transistor, a common electrode and an electrical signal output port, and the electrical signal output port is connected to the thin film transistor; Wherein, the electrical signal output port includes a current output port and / or a voltage output port.

9. The display device according to claim 8, characterized in that: The modulator includes at least one first modulation electrode, which is located on one side of the third waveguide and / or the fourth waveguide, one end of the first modulation electrode is connected to the current output port, and the other end of the first modulation electrode is connected to the common electrode.

10. The display device according to claim 8, characterized in that: The modulator comprises at least one second modulation electrode and at least one third modulation electrode, wherein the second modulation electrode and the third modulation electrode are located at opposite sides of the third waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode; And / or, the second modulation electrode and the third modulation electrode are located on opposite sides of the fourth waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode.

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