Shared RPS clean and bypass transport architecture

Abstract

An exemplary substrate processing system may include a cover plate. The system may include a gas feed line having an RPS outlet and a bypass outlet. The system may include a remote plasma unit supported atop the cover plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled with the RPS outlet. The system may include a center manifold having an RPS inlet coupled with the outlet and a bypass inlet coupled with the bypass outlet. The central manifold may include a plurality of outlet ports. The system may include a plurality of side manifolds fluidly coupled with the outlet port. Each of the side manifolds may define a gas lumen. The system may include a plurality of output manifolds disposed on the cover plate. Each output manifold may be fluidly coupled with a gas lumen of one of the side manifolds.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. patent application No. 17 / 880,335, filed on August 3, 2022, entitled “SHARED RPS CLEAN AND BYPASS DELIVERY ARCHITECTURE,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to substrate processing systems and components. Background Art

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple processing chambers together. This configuration can facilitate the execution of several sequential processing operations without removing the substrate from the controlled processing environment, or this configuration can allow similar processes to be performed on multiple substrates at once in different chambers. These chambers may include, for example, degassing chambers, pretreatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metrology chambers, and other chambers. The combination of chambers in a cluster tool, and the operating conditions and parameters of these chamber operations are selected to use specific process recipes and process flows to manufacture specific structures.

[0004] After processing operations, chamber components may require cleaning to remove residues deposited on chamber walls and other components during deposition operations. Systems often utilize remote plasma sources to dissociate cleaning gases to generate free radicals, which can then react with residues within the chamber to form gaseous products that can be exhausted from the chamber. In order to maintain the efficiency of such cleaning operations, the flow of gases and free radicals may need to be carefully controlled.

[0005] Therefore, there is a need for improved systems and methods that can be used to efficiently clean substrate processing chambers. These and other needs are addressed by the present technology. Summary of the invention

[0006] An exemplary substrate processing system may include a cover plate. The system may include a gas feed line having an RPS outlet and a bypass outlet. The system may include a remote plasma unit supported on top of the cover plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled to the RPS outlet of the gas feed line. The system may include a central manifold having an RPS inlet coupled to the outlet of the remote plasma unit and a bypass inlet coupled to the bypass outlet of the gas feed line. The central manifold may include a plurality of outlet ports. The system may include a plurality of side manifolds, each of which is fluidly coupled to one of the plurality of outlet ports of the central manifold. Each of the plurality of side manifolds may define a gas lumen. The system may include a plurality of output manifolds disposed on the cover plate. Each of the plurality of output manifolds may be fluidly coupled to the gas lumen of one of the plurality of side manifolds.

[0007] In some embodiments, the central manifold may define at least one cooling channel fluidly coupled to a coolant source. The at least one cooling channel may include an upper cooling channel and a lower cooling channel spaced vertically apart. Each of the plurality of outlet ports may be angled relative to the inlet end of the gas lumen of the RPS inlet and the corresponding one of the plurality of side manifolds. The angle of each of the plurality of outlet ports relative to the cover plate may be between about 30 degrees and 60 degrees. The gas lumen of each of the plurality of side manifolds may include a horizontal section and a curved section, the horizontal section being proximate to the corresponding one of the outlet ports of the central manifold, and the curved section being proximate to the corresponding one of the plurality of output manifolds. The system may include a plurality of isolation valves. Each of the plurality of isolation valves may be fluidly coupled between one of the plurality of side manifolds and the corresponding one of the plurality of output manifolds. The system may include a plurality of processing chambers positioned below the cover plate. Each processing chamber may define a processing region fluidly coupled to one of the plurality of output manifolds. The system may include a support structure that raises the remote plasma unit and the central manifold above the top surface of the cover plate. The inlet of the gas feed line may be coupled to a clean gas source.

[0008] Some embodiments of the present technology may encompass semiconductor processing systems. The system may include a cover plate. The system may include a gas feed line having an RPS outlet and a bypass outlet. The system may include a remote plasma unit supported atop the cover plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled to the RPS outlet of the gas feed line. The system may include a central manifold having an RPS inlet coupled to the outlet of the remote plasma unit and a bypass inlet coupled to the bypass outlet of the gas feed line. The central manifold may include a plurality of outlet ports. Each of the plurality of outlet ports may be at an angle between about 30 degrees and 60 degrees relative to the cover plate. The central manifold may define at least one cooling channel fluidly coupled to a coolant source. The system may include a plurality of side manifolds, each of the plurality of side manifolds being fluidly coupled to one of the plurality of outlet ports of the central manifold. Each of the plurality of side manifolds may define a gas lumen. The system may include a plurality of output manifolds disposed on the cover plate. Each of the plurality of output manifolds may be fluidly coupled to the gas lumen of one of the plurality of side manifolds.

[0009] In some embodiments, the bypass inlet may be fluidly coupled to a plurality of outlet ports. Each of the plurality of outlet ports may be at an angle between about 120 and 150 degrees relative to the RPS inlet. Each of the plurality of outlet ports may be at an angle between about 120 and 150 degrees relative to the gas lumen of a corresponding one of the plurality of side manifolds. At least one cooling channel may include an upper cooling channel and a lower cooling channel spaced vertically apart. The system may include an intermediate cooling channel section fluidly coupling the upper cooling channel to the lower cooling channel.

[0010] Some embodiments of the present technology may encompass methods of flowing gases within a semiconductor processing system. The method may include flowing a clean gas to a remote plasma unit via a gas feed line. The method may include flowing a clean gas from the remote plasma unit to a central manifold. The method may include dividing the clean gas flow into a plurality of series flows within the central manifold. The method may include flowing each of the plurality of series flows through one of a plurality of side manifolds via one of a plurality of outlet ports of the central manifold and into a corresponding output manifold in a plurality of output manifolds. Each of the plurality of outlet ports may be at an angle between about 30 and 60 degrees relative to the horizontal. The method may include delivering each of the plurality of series flows to a corresponding processing chamber in a plurality of processing chambers.

[0011] In some embodiments, the method may include flowing a purge gas through a gas feed line. The method may include actuating a valve coupled to the gas feed line to direct the purge gas into the central manifold and bypass the remote plasma unit. The method may include flowing a cooling fluid into at least one cooling channel formed in the central manifold. The cooling fluid may have a temperature between about 15° C. and 75° C. or about 15° C. or 75° C.

[0012] Such techniques may provide multiple benefits over conventional systems and techniques. For example, the processing system may provide multi-substrate processing capabilities that can be scaled far beyond conventional designs. In addition, the processing system may provide equal flow splits between multiple chambers while preventing crosstalk between chambers. The processing system may also provide a smooth clean gas flow path and may reduce the occurrence of recombination. These and other embodiments, as well as many of their advantages and features, will be described in more detail in conjunction with the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the accompanying drawings.

[0014] Figure 1 Illustrated is a schematic top plan view of an exemplary processing system in accordance with some embodiments of the present technology.

[0015] Figure 2 Illustrated is a schematic isometric view of a transfer region of an exemplary chamber system in accordance with some embodiments of the present technology.

[0016] Figure 3 Illustrated is a schematic isometric view of a transfer region of an exemplary chamber system in accordance with some embodiments of the present technology.

[0017] Figure 4 Illustrated is a schematic isometric view of a transfer region of an exemplary chamber system in accordance with some embodiments of the present technology.

[0018] Figure 5 A schematic partial isometric view of a chamber system according to some embodiments of the present technology is illustrated.

[0019] Figure 6 Illustrated is a schematic isometric view of an exemplary processing system in accordance with some embodiments of the present technology.

[0020] Figure 7 Picture shows Figure 6 A schematic side elevation view of a partial cross-section of a processing system.

[0021] Figure 8 Picture shows Figure 6 A schematic side elevation view of a partial cross-section of a processing system.

[0022] Fig. 9 Illustrated is a schematic isometric view of an exemplary center manifold according to some embodiments of the present technology.

[0023] Fig.10 Operations of an exemplary process for flowing gases within a semiconductor processing system are illustrated in accordance with some embodiments of the present technology.

[0024] Several drawings are included as schematic diagrams. It will be understood that the drawings are for illustrative purposes and should not be considered to scale or proportion unless specifically stated to be to scale or proportion. Furthermore, as schematic diagrams, the drawings are provided to aid understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0025] In the accompanying drawings, similar components and / or features may have the same reference number. In addition, various components of the same type may be distinguished by following the reference number with a letter that distinguishes between the similar components. If only the first reference number is used in this specification, the description applies to any of the similar components having the same first reference number, regardless of the letter. DETAILED DESCRIPTION

[0026] Substrate processing may include time-intensive operations for adding, removing, or otherwise modifying materials on a wafer or semiconductor substrate. Efficient movement of substrates can reduce queue time and improve substrate throughput. In order to improve the number of substrates processed in a cluster tool, additional chambers may be integrated into the host. Although transfer robots and processing chambers can be continuously added by lengthening tools, this may become space inefficient as the footprint of cluster tools expands. Thus, the present technology may include a cluster tool with an increased number of processing chambers within a limited footprint. In order to accommodate the limited footprint around the transfer robot, the present technology may increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a section of a transfer robot located in the center to maximize the number of chambers radially surrounding the robot. The present technology may extend this concept by combining additional chambers laterally outward as another row or another group of chambers. For example, the present technology may be applied to a cluster tool including three, four, five, six or more processing chambers that can be accessed at each of one or more robot access locations.

[0027] However, as additional processing locations are added, access to and from these locations from a central robot may no longer be feasible without additional transfer capabilities at each location. Some conventional techniques may include a wafer carrier on which the substrate remains mounted during transitions. However, wafer carriers may cause thermal non-uniformity and particle contamination on the substrate. The present technology overcomes these problems by incorporating a transfer section that is vertically aligned with the processing chamber area and a turntable or transfer device that can operate in conjunction with the central robot to access additional wafer locations. In some embodiments, the present technology may not use a conventional wafer carrier and may transfer a particular wafer from one substrate support to a different substrate support within a transfer area.

[0028] After a certain number of processing operations, it may be necessary to clean the chamber components because residues from the deposition operations may accumulate in the chamber. A remote plasma source or unit for delivering cleaning gases and free radicals can be used to remove residues from the chamber. The present technology provides a single remote plasma unit to distribute cleaning gases to multiple processing chambers. An embodiment may provide a system architecture that provides smooth transition angles along the flow paths of the cleaning gases and free radicals, which can help reduce the recycling of gases. In turn, this can help reduce the amount of recombination of free radicals. In addition, an embodiment may actively cool the central manifold to help maintain the integrity of the sealing element and increase the efficiency of cleaning free radicals. An embodiment may also provide a purge gas path that bypasses the remote plasma unit, which can ensure that the purge gas does not have impurities that may be present in the remote plasma unit.

[0029] Although the remaining disclosure will routinely identify specific structures, such as a four-position chamber system, that may employ the structures and methods of the present invention, it will be readily appreciated that the systems and methods may be equally applicable to any number of structures and devices that may benefit from the capabilities of the explained structures. Thus, the present technology should not be considered limited to use with any particular structure alone. Furthermore, although an exemplary tool system will be described to provide a basis for the present technology, it will be appreciated that the present technology may be combined with any number of semiconductor processing chambers and tools that may benefit from some or all of the operations and systems to be described.

[0030] Figure 1 A top plan view of one embodiment of a substrate processing tool or processing system 100 of deposition, etching, baking and curing chambers according to some embodiments of the present technology is illustrated. In the figure, a set of front-opening standard bays 102 supply substrates of various sizes, which are received by robots 104a and 104b within a factory interface 103 and placed into a load lock or low pressure holding area 106 and then transported to one of the substrate processing areas 108 located in a chamber system or quadruple section 109a-c, which can each be a substrate processing system with a transfer area fluidly coupled to multiple processing areas 108. Although a quadruple system is shown, it will be understood that platforms incorporating standalone chambers, dual chambers, or other multiple chamber systems are also encompassed by the present technology. A second robot 110 housed in a transfer chamber 112 may be used to transport substrate wafers from the holding area 106 to the quadruple section 109 and back, and the second robot 110 may be housed in a transfer chamber to which each of the quadruple sections or processing systems may be connected. Each substrate processing area 108 may be configured to perform a plurality of substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0031] Each quadruple section 109 may include a transfer area that receives a substrate from a second robot 110 and delivers the substrate to the second robot 110. The transfer area of ​​the chamber system may be aligned with a transfer chamber having a second robot 110. In some embodiments, the robot may move in and out of the transfer area laterally. In subsequent operations, components of the transfer section may translate the substrate vertically into an overlying processing area 108. Similarly, the transfer area may also be operable to rotate the substrate between positions within each transfer area. The substrate processing area 108 may include any number of system components for depositing, annealing, curing and / or etching a film of material on a substrate or wafer. In one configuration, two sets of processing areas (such as the processing areas in quadruple sections 109a and 109b) may be used to deposit material on a substrate, and a third set of processing chambers (such as the processing chambers or areas in quadruple sections 109c) may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers (such as all twelve chambers shown) may be configured to deposit and / or cure a film on a substrate.

[0032] As shown in the figure, the second robot 110 may include two arms for simultaneously conveying and / or picking up multiple substrates. For example, each quadruple section 109 may include two entrances and exits 107 along the surface of the housing of the transfer area, and the two entrances and exits 107 may be aligned laterally with the second robot. The entrance and exit may be defined along the surface adjacent to the transfer chamber 112. In some embodiments, such as shown in the figure, the first entrance and exit may be aligned with the first substrate support of the multiple substrate supports of the quadruple section. In addition, the second entrance and exit may be aligned with the second substrate support of the multiple substrate supports of the quadruple section. The first substrate support may be adjacent to the second substrate support, and in some embodiments, the two substrate supports may define a first row of substrate supports. As illustrated in the illustrated configuration, the second row of substrate supports may be positioned to be laterally outward from the transfer chamber 112 behind the first row of substrate supports. The two arms of the second robot 110 may be spaced apart to allow the two arms to enter and exit the quadruple section or chamber system at the same time to convey or pick up one or two substrates to the substrate supports in the transfer area.

[0033] Any one or more of the transfer areas described may be combined with additional chambers that are separate from the manufacturing systems illustrated in the different embodiments. It will be appreciated that the processing system 100 allows for additional configurations of chambers for deposition, etching, annealing, and curing of material films. In addition, any number of other processing systems may be utilized by the present technology, which may be combined with a transfer system for performing any of the specific operations (such as substrate movement). In some embodiments, a processing system that can maintain a vacuum environment in various sections (such as the mentioned holding and transfer areas) while providing access to multiple processing chamber areas can allow operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes.

[0034] As mentioned, the processing system 100, or more specifically a quadruple section or chamber system in conjunction with the processing system 100 or other processing systems, may include a transfer section positioned below the processing chamber area as shown. Figure 2 Illustrated is a schematic isometric view of a transfer section of an exemplary chamber system 200 in accordance with some embodiments of the present technology. Figure 2 Additional aspects or variations of the transfer regions described above may be illustrated and may include any of the components or features described. The illustrated system may include a transfer region housing 205, which may be a chamber body as discussed further below, defining a transfer region in which a plurality of components may be included. The transfer region may additionally be at least partially comprised of a process chamber or process region (such as in a process chamber) fluidically coupled to the transfer region. Figure 1 The transfer area housing 205 is defined from above by a processing chamber area 108 shown in a quadruple section 109 of the transfer area housing. The sidewalls of the transfer area housing may define one or more access locations 207 through which substrates may be transported and retrieved, such as by the second robot 110 as discussed above. In some embodiments, the access locations 207 may be slit valves or other sealable access locations that include doors or other sealing mechanisms to provide a closed environment within the transfer area housing 205. Although shown as having two such access locations 207, it will be understood that in some embodiments, only a single access location 207 may be included, as well as access locations on multiple sides of the transfer area housing. It will also be understood that the transfer section shown may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, including substrates characterized by any number of geometries or shapes.

[0035] Within the transfer area housing 205 may be a plurality of substrate supports 210 positioned around the transfer area volume. Although four substrate supports are shown, it will be understood that any number of substrate supports are similarly encompassed by embodiments of the present technology. For example, greater than or about three, four, five, six, eight, or more substrate supports 210 may be accommodated in the transfer area according to embodiments of the present technology. The second robot 110 may deliver a substrate to either or both of the substrate supports 210a or 210b through the access port 207. Similarly, the second robot 110 may pick up substrates from these locations. Lifting rods 212 may protrude from the substrate supports 210 and may allow a robot to enter and exit from under the substrate. The lifting rods may be fixed to the substrate supports, or fixed at a location where the substrate supports may be recessed below them, or in some embodiments, the lifting rods may additionally be raised or lowered through the substrate supports. The substrate support 210 may be vertically translatable and, in some embodiments, may extend to a processing chamber region of a substrate processing system positioned above the transfer area enclosure 205 , such as the processing chamber region 108 .

[0036] The transfer area housing 205 may provide access 215 for an alignment system, which may include an aligner that may extend through an aperture of the transfer area housing as shown and may operate in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through an adjacent aperture and may determine whether the substrate being translated is properly aligned. The transfer area housing 205 may also include a transfer device 220 that may operate in a number of ways to position and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered to the transfer chamber. Additional transfer operations may include rotating the substrate between substrate supports for additional processing in an overlying processing area.

[0037] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. The end effector 235 may be coupled to the shaft. The end effector 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although a central body from which the arms extend is shown, in various embodiments, the end effector may additionally include separate arms each coupled to a shaft or central hub. Any number of arms may be included in embodiments of the present technology. In some embodiments, the number of arms 237 may be similar or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the end effector. The arms may be characterized by any number of shapes and profiles, such as a straight profile or an arcuate profile, and include any number of remote profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing access to substrates, such as for alignment or engagement.

[0038] The end effector 235, or components or portions of the end effector, may be used to contact the substrate during transfer or movement. These components, as well as the end effector, may be made of or include a number of materials, including conductive and / or insulating materials. In some embodiments, the material may be coated or plated to withstand contact with precursors or other chemicals that may be transferred from an overlying processing chamber into the transfer chamber.

[0039] In addition, the material may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed on the support. The substrate support may be configured to increase the surface or substrate temperature to a temperature greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures may be maintained during operation, and thus the components of the transfer device 220 may be exposed to any of these stated or covered temperatures. Therefore, in some embodiments, any of the materials may be selected to accommodate these temperature formulations, and may include materials, such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion, or other beneficial properties.

[0040] The component coupling may also be adapted for operation at high temperatures and / or in corrosive environments. For example, where the terminal effector and the end portion are each ceramic, the coupling may include press-fit fittings, snap-fit ​​fittings, or other fittings that may not include additional materials, such as bolts, which may expand and contract with temperature and may cause fractures in the ceramic. In some embodiments, the end portion may be continuous with the terminal effector and may be integrally formed with the terminal effector. Any number of other materials that may facilitate resistance during operation or operation may be utilized and are similarly covered by the present technology. The transfer device 220 may include multiple components and configurations that may facilitate movement of the terminal effector in multiple directions, which may facilitate rotational movement and vertical or lateral movement in one or more manners utilizing a drive system component to which the terminal effector may be coupled.

[0041] Figure 3 A schematic isometric view of a transfer region of chamber system 300 of an exemplary chamber system according to some embodiments of the present technology is illustrated. Chamber system 300 can be similar to the transfer region of chamber system 200 described above, and can include similar components, including any of the components, features, or configurations described above. Figure 3 Certain component couplings covered by the present technology may also be shown in conjunction with the following figures.

[0042] The chamber system 300 may include a chamber body 305 and a housing defining a transfer region. Within the defined volume may be a plurality of substrate supports 310 distributed around the chamber body as previously described. As will be further described below, each substrate support 310 may be vertically translatable along a central axis of the substrate support between a first position shown in the figure and a second position in which substrate processing may be performed. The chamber body 305 may also define one or more access ports 307 through the chamber body. A transfer device 335 may be positioned within the transfer region and configured to engage and rotate a substrate between the substrate supports 310 within the transfer region as previously described. For example, the transfer device 335 may be rotatable about the central axis of the transfer device to reposition the substrate. The transfer device 335 may also be laterally translatable in some embodiments to further facilitate repositioning the substrate at each substrate support.

[0043] The chamber body 305 may include a top surface 306, which may provide support for the overlying components of the system. The top surface 306 may define a gasket groove 308, which may provide a base for the gasket to provide an airtight seal to the overlying components for vacuum processing. Unlike some conventional systems, the chamber system 300, as well as other chamber systems according to some embodiments of the present technology, may include an open transfer area within the processing chamber, and a processing area overlying the transfer area may be formed. Because the transfer device 335 produces a sweep area, a support or structure for a separate processing area may be unavailable. Subsequently, the present technology may utilize an overlying cover structure to form a separate processing area overlying the open transfer area, as will be described below. Therefore, in some embodiments, the seal between the chamber body and the overlying components may occur only around the outer chamber body wall defining the transfer area, and in some embodiments, there may be no internal coupling. The chamber body 305 may also define a hole 315, which may facilitate the exhaust flow of the processing area from the overlying structure. The top surface 306 of the chamber body 305 may also define one or more gasket grooves around the aperture 315 for sealing against overlying components. In addition, the aperture may provide a locating feature that may facilitate stacking of components in some embodiments.

[0044] Figure 4 A schematic isometric view of an overlying structure of a chamber system 300 according to some embodiments of the present technology is illustrated. For example, in some embodiments, a first cover plate 405 can be disposed on the chamber body 305. The first cover plate 405 can be characterized by a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first cover plate 405 can contact the chamber body 305 and can define a mating groove to cooperate with the groove 308 discussed above for creating a gasket channel between the components. The first cover plate 405 can also define a hole 410 that can provide separation of an overlying area of ​​the transfer chamber to form a processing area for substrate processing.

[0045] A hole 410 may be defined through the first cover plate 405 and may be at least partially aligned with a substrate support in the transfer region. In some embodiments, the number of holes 410 may be equal to the number of substrate supports in the transfer region, and each hole 410 may be axially aligned with a substrate support of the plurality of substrate supports. As will be further described below, when vertically raised to a second position within the chamber system, the processing region may be at least partially defined by the substrate support. The substrate support may extend through the hole 410 of the first cover plate 405. Thus, in some embodiments, the hole 410 of the first cover plate 405 may be characterized by a diameter that is larger than the diameter of the associated substrate support. Depending on the amount of clearance, the diameter can be greater than or about 25% greater than the diameter of the substrate support, and in some embodiments, can be greater than or about 20%, less than or about 15%, less than or about 10%, less than or about 9%, less than or about 8%, less than or about 7%, less than or about 6%, less than or about 5%, less than or about 4%, less than or about 3%, less than or about 2%, less than or about 1%, or less than the diameter of the substrate support, which can provide a minimum clearance distance between the substrate support and the hole 410.

[0046] The first cover plate 405 may also include a second surface 409 opposite the first surface 407. The second surface 409 may define a recessed flange 415, which may create an annular recessed bracket passing through the second surface 409 of the first cover plate 405. In some embodiments, the recessed flange 415 may be defined around each hole in the plurality of holes 410. The recessed bracket may provide support for the cover stack component, as will be further described below. In addition, the first cover plate 405 may define a second hole 420, which may at least partially define a pumping channel from an overlying component described below. The second hole 420 may be axially aligned with the hole 315 of the chamber body 405 previously described.

[0047] Figure 5 A schematic partial isometric view of a chamber system 300 according to some embodiments of the present technology is illustrated. A partial cross-sectional view through two processing regions and a portion of a transfer region of the chamber system may be shown. For example, the chamber system 300 may be a quadruple section of the previously described processing system 100 and may include any of the components of any of the previously described components or systems.

[0048] As presented in the figures, the chamber system 300 may include a chamber body 305 defining a transfer region 502 including a substrate support 310 that may extend into the chamber body 305 and may be vertically translatable as previously described. A first cover plate 405 may be disposed overlying the chamber body 305 and may define apertures 410 that create access to a processing region 504 where additional chamber system components are to be formed. A cover stack 505 may be disposed around or at least partially within each aperture, and the chamber system 300 may include a plurality of cover stacks 505, including a number of cover stacks equal to the number of apertures 410 in the plurality of apertures. Each cover stack 505 may be disposed on the first cover plate 405 and may be disposed on a support created by a recessed flange through a second surface of the first cover plate. The cover stack 505 may at least partially define a processing region 504 of the chamber system 300.

[0049] As shown, the processing area 504 can be vertically offset from the transfer area 502, but can be fluidly coupled to the transfer area. In addition, the processing area can be separated from other processing areas. Although the processing area can be fluidly coupled to other processing areas from below through the transfer area, the processing area can be fluidly isolated from each of the other processing areas from above. In some embodiments, each cover stack 505 can also be aligned with a substrate support. For example, as shown, the cover stack 505a can be aligned above the substrate support 310a, and the cover stack 505b can be aligned above the substrate support 310b. When lifted to an operating position (such as the second position), the substrate can transport the substrate for independent processing in a separate processing area. When in this position, as will be further described below, each processing area 504 can be at least partially defined from below by the associated substrate support in the second position.

[0050] Figure 5Also shown is an embodiment in which a second cover plate 510 for the chamber system may be included. The second cover plate 510 may be coupled to each of the cover stacks, which in some embodiments may be positioned between the first cover plate 405 and the second cover plate 510. As will be explained below, the second cover plate 510 may facilitate access to components of the cover stack 505. The second cover plate 510 may define a plurality of holes 512 passing through the second cover plate. Each hole in the plurality of holes may be defined to provide a fluid inlet and outlet to a particular cover stack 505 or a processing region 504. In some embodiments, a remote plasma unit 515 may be optionally included in the chamber system 300 and may be supported on the second cover plate 510. In some embodiments, the remote plasma unit 515 may be fluidly coupled to each hole 512 in the plurality of holes passing through the second cover plate 510. An isolation valve 520 may be included along each fluid line to provide fluid control for each independent processing region 504. For example, as shown, hole 512a may provide a fluid inlet and outlet to the cover stack 505a. In some embodiments, the aperture 512a may also be axially aligned with any of the cover stack components and with the substrate support 310a, which may result in axial alignment for each of the components associated with the independent processing regions, such as along a central axis through the substrate support or any of the components associated with a particular processing region 504. Similarly, the aperture 512b may provide fluid access to the cover stack 505b and may be aligned, including in some embodiments, axially aligned with components of the cover stack and the substrate support 310b.

[0051] Figure 6 A schematic isometric view of one embodiment of a semiconductor processing system 600 according to some embodiments of the present technology is illustrated. Components of any of the previously shown and described systems may be included in the figure, and further aspects of any of the previously described systems may also be illustrated. It will be understood that the diagram may also illustrate exemplary components, as would be seen on any of the quadruple sections 109 described above.

[0052] The semiconductor processing system 600 may include a cover plate 605, which may be similar to the previously described second cover plate 510. For example, the cover plate 605 may define a plurality of holes, similar to the holes 512, that provide access to a plurality of processing chambers positioned below the cover plate 605. Each hole in the plurality of holes may be defined to provide fluid access to a particular cover stack, processing chamber, and / or processing region.

[0053] A plurality of output manifolds 610 may be disposed atop the cover plate 605, with each of the output manifolds 610 being associated with a particular process chamber. For example, an output manifold 610 may be positioned over each hole formed in the cover plate 605 and may be fluidly coupled with the cover stack component to deliver one or more gases to a processing region of a corresponding process chamber.

[0054] The remote plasma unit 615 can be supported atop the cover plate 605 and can be fluidly coupled to each of the output manifolds 610. For example, as will be discussed further below, each output manifold 610 can define a hole, such as a central hole, that can be fluidly coupled to the remote plasma unit 615 using a manifold assembly. The remote plasma unit 615 can be positioned atop a support structure, which can include a support plate 620 disposed atop and / or otherwise coupled to a plurality of support legs 625 that can extend between a top surface of the cover plate 605 and a bottom surface of the support plate 620 to elevate the remote plasma unit 615 to a height above each of the output manifolds 610.

[0055] As noted above, the remote plasma unit 615 can be fluidly coupled to each of the output manifolds 610 using a manifold assembly. The remote plasma unit 615 can provide precursors, plasma effluents, and / or purge gases to the output manifolds 610 for subsequent delivery to a processing chamber for film deposition, chamber cleaning, and / or other processing operations. The manifold assembly can include a central manifold 630 that can be coupled to a base of the remote plasma unit 615 and separate the flow of a single gas input from the remote plasma unit 615 to separate flows or series of flows to each of the output manifolds 610. Each separated gas flow of the central manifold 630 can be coupled to a side manifold 635 that defines at least a portion of a dedicated flow path to one of the output manifolds 610. In some embodiments, an isolation valve 640 may be positioned between each of the side manifolds 635 and the output manifold 610, although some embodiments may omit the isolation valves, wherein the side manifolds 635 are coupled to the respective output manifolds 610 without any intermediate valve structures. The isolation valves 640 may provide fluid control to each processing chamber, as well as prevent gas backflow to the remote plasma unit 615 and prevent crosstalk between the various processing chambers. In some embodiments, a gas feed line 645 may be provided, which may be coupled to a gas source (such as a gas panel) and may deliver a cleaning gas (such as argon) to the remote plasma unit 615 and / or the central manifold 630 for various cleaning operations.

[0056] Figure 7A partial cross-sectional side elevation view of a semiconductor processing system 600 is shown. As shown, the remote plasma unit 615 may include an interior region 616 extending between and fluidly coupling an inlet 617 and an outlet 618. The outlet 618 may be coupled to a central manifold 630. For example, the central manifold 630 may include an RPS inlet 631 that may be fluidly coupled to the outlet 518 of the remote plasma unit 615. The central manifold 630 may define a plurality of outlet ports 632 ( Figure 8 ), a plurality of outlet ports 632 can distribute precursors, plasma effluents, and / or purge gases to the output manifold 610 for subsequent delivery to a processing chamber, as will be discussed in more detail below. The central manifold 630 can also include a bypass inlet 633. The bypass inlet 633 can be fluidly coupled to the outlet ports 632, which can enable the purge gas to flow to the output manifold 610 for subsequent delivery to the processing chamber while bypassing the remote during a purge operation.

[0057] The gas feed line 645 can be fluidly coupled to both the remote plasma unit 615 and the central manifold 630, and can deliver purge gas and / or cleaning gas from a gas source 650, such as a gas panel, to the semiconductor plasma system 600. For example, the gas feed line 645 can include an inlet 646, which can be coupled to the gas source 650. The gas panel 650 can be located at any position relative to the cover plate 605. In a specific embodiment, the gas panel 650 can be positioned below the cover plate 605 and / or the processing chamber. The gas feed line 645 can include an RPS outlet 647, which can be coupled to the inlet 617 of the remote plasma unit 615, and a bypass outlet 648, which can be coupled to the bypass inlet 633 of the central manifold 630. This can enable the gas feed line 645 to deliver gases (such as purge gas and / or cleaning gas) to the remote plasma unit 615 and / or the central manifold 630 for subsequent distribution to the processing chamber during the purge and / or cleaning operation. In some embodiments, one or more valves 655 can be docked with the gas feed line 645 to control the flow through the gas feed line 645. For example, the bypass valve 655a can be coupled to the bypass outlet 648 and / or otherwise positioned near the bypass outlet 648. In some embodiments, the bypass valve 655a can be formed of aluminum. Conventionally, stainless steel is used in many valve designs, however, stainless steel can generate particles in the gas / plasma flowing through the valve. Aluminum valves can prevent such particle generation. The RPS valve 655b can be coupled to the RPS outlet 647 and / or otherwise positioned near the RPS outlet 647. During the cleaning operation, the bypass valve 655a can be closed and the RPS valve 655b can be opened. This may allow cleaning gases such as (but not limited to) NF 3) flows into the remote plasma unit 615 via inlet 617. RF energy can be supplied to the remote plasma unit 615, which can produce a plasma that dissociates the cleaning gas into a gas and reactive radicals (such as nitrogen and reactive fluorine radicals). The gas and radicals can flow from the remote plasma unit 615 to each of the processing chambers, such as via the central manifold 630, the side manifold 635, and the output manifold 610 (and the isolation valve 640 (if present)). Once in the processing chamber, the radicals can react with the residue on the walls of the chamber to form a gas product that can be carried away by the series flow of gas through the exhaust port and / or the foreline to clean the chamber. During the purge operation, the bypass valve 655a can be opened and the RPS valve 655b can be closed. This can allow a purge gas (such as argon) to be delivered to the central manifold 630 via the bypass inlet 633. Purge gas may flow from the central manifold 630 to each process chamber via the side manifolds 635 (via outlet ports 632) and the output manifold 610 (and isolation valves 640 if present) to purge process gas in the chambers and other system components and / or to prevent backflow of process gas during process operations. By bypassing the remote plasma unit 615 during purge operations, the amount of impurities within the purge gas may be reduced because impurities will not be introduced from the remote plasma unit 615.

[0058] Figure 8A partial cross-sectional side elevation view of a semiconductor processing system 600 is shown. As shown, the RPS inlet 631 of the central manifold 630 can be at a top end of the central manifold 630 and can be coupled to an outlet 618 of the remote plasma unit 615, which can be located at a bottom of the remote plasma unit 615. The central manifold 630 can define a plurality of outlet ports 632 that can fluidly couple the RPS inlet 631 with a gas lumen 636 defined by each of the side manifolds 635. For example, an inlet end of each of the outlet ports 632 can be located proximate to the RPS inlet 631 and an outlet end of each of the outlet ports 632 can be coupled to a respective one of the gas lumens 636. Each outlet port 632 can be angled relative to the inlet end of the RPS inlet 631 and / or each gas lumen 636 of the side manifold 635 along the length of the outlet port 632. For example, each outlet port 632 can be at an angle of between or about 30 and 60 degrees, between or about 35 and 55 degrees, between or about 40 and 50 degrees, or about 45 degrees relative to the cover plate 605 (e.g., relative to horizontal). Each of the outlet ports 632 can be at an angle of between or about 120 and 150 degrees, between or about 125 and 145 degrees, between or about 130 and 140 degrees, or about 135 degrees relative to the RPS inlet 631. For example, the length of the RPS inlet 631 can have a substantially vertical longitudinal axis, while the longitudinal axis of each outlet port 632 can be angled downward toward a respective one of the gas lumens 636. Each of the outlet ports 632 can be at an angle of between about 120 and 150 degrees, between or about 125 and 145 degrees, between or about 130 and 140 degrees, or about 135 degrees relative to the gas lumen 636 of a corresponding one of the side manifolds 635. For example, the longitudinal axis of the inlet portion of each gas lumen 636 can be generally horizontal, while each outlet port 632 can be angled downward toward a corresponding one of the gas lumens 636.

[0059] By providing an outlet port 632 that is angled relative to the RPS inlet 631 and / or the gas lumen 636, the transition angle between the respective components is softened. The softer transition angle between the components can help reduce the recombination of free radicals generated in the remote plasma unit 615 during cleaning operations. The reduction in recombination can help reduce free radical waste, reduce the temperature of the manifold (because the bend prevents particles from recirculating within the manifold and bombarding each other to generate heat), and can make the cleaning operation more efficient.

[0060] Each of the gas lumens 636 may extend between and fluidly couple (possibly via an isolation valve 640) one of the outlet ports 632 and a corresponding one of the output manifolds 610. For example, each gas lumen 636 may include a generally horizontal section 637 proximate to a corresponding one of the outlet ports 632 (e.g., an inlet end of the gas lumen 636). Each gas lumen 636 may include a curved section 638 proximate to a corresponding one of the output manifolds 610 and / or the isolation valve 640 (e.g., an outlet end of the gas lumen 636). The curved section 638 may transition between the generally horizontal section 637 and a vertical lumen defined by the isolation valve 640 and / or the output manifold 610. The curved section 638 may have a constant radius of curvature as shown, or may have a variable radius of curvature. The curved section 638 may comprise at least or approximately 10% of the length of the gas lumen 636, at least or approximately 15% of the length, at least or approximately 20% of the length, at least or approximately 25% of the length, at least or approximately 30% of the length, or more.

[0061] By rounding the transition between the horizontal section 637 and the vertical lumen defined by the isolation valve 640 and / or the output manifold 610, embodiments of the present technology can reduce the amount of circulation of cleaning gas and free radicals flowing through the gas lumen 636, the isolation valve 640, and / or the output manifold 610. The reduced circulation can reduce the recombination of free radicals during the cleaning operation. The reduction in recombination can help reduce free radical waste and can make the cleaning operation more efficient.

[0062] Fig. 9A schematic isometric view of a central manifold 630 is illustrated. In some embodiments, the central manifold 630 may be formed of aluminum. As shown, a top surface of the central manifold 630 may define an RPS inlet 631, wherein one or more lateral surfaces of the central manifold 630 define an outlet end of a corresponding outlet port 632. The central manifold 630 may define and / or otherwise include a plurality of cooling channels 634. For example, the central manifold 630 may define at least or about one cooling channel 634, at least or about two cooling channels 634, at least or about three cooling channels 634, at least or about four cooling channels 634, or more cooling channels 634. Some or all of the cooling channels 634 may be isolated from each other and / or fluidly coupled to each other. In a particular embodiment, the central manifold 630 may define an upper cooling channel 634a within an upper portion of the central manifold 630 (such as near the RPS inlet 631 and / or above the outlet end of the outlet port 632). The central manifold 630 may define a lower cooling channel 634b, which is vertically spaced apart from the upper cooling channel 634a. For example, the lower cooling channel may be disposed in the lower half of the central manifold 630 (such as near the bypass inlet 633 and / or below the outlet port 632). In some embodiments, the upper cooling channel 634a and the lower cooling channel 634b may be fluidically isolated from each other. In other embodiments, the central manifold 630 may include an intermediate cooling channel 634c, which may fluidly couple the upper cooling channel 634a with the lower cooling channel 634b. This may enable the cooling fluid to circulate sequentially through each of the upper cooling channel 634a and the lower cooling channel 634b. In some embodiments, each cooling channel 634 may include an epoxy filled with aluminum. In some embodiments, a tube (such as a stainless steel tube) may be provided in each cooling channel to ensure that the cooling fluid does not corrode the cooling channel 634.

[0063] Each cooling channel 634 may have an inlet that may be coupled to a coolant source 660, such as a process chilled water source. The coolant source 660 may pump and / or otherwise flow a cooling fluid through the cooling channels 634, which may then be returned via an outlet of the corresponding cooling channel 634. The cooling fluid may be at a temperature between or about 15°C and 75°C, between or about 20°C and 50°C, between or about 25°C and 30°C. Such temperatures may help maintain the temperature of the central manifold 630 at less than or about 250°C, less than or about 240°C, less than or about 230°C, less than or about 220°C, less than or about 10°C, less than or about 200°C, or lower. By maintaining the temperature of the central manifold 630 below such temperatures, embodiments of the present technology may help maintain the integrity of O-rings and / or other sealing elements. Furthermore, maintaining the temperature of central manifold 630 below such temperatures may increase the efficiency of free radicals generated during cleaning operations.

[0064] Fig.10 Operations of an exemplary method 1000 of flowing gases within a semiconductor processing system in accordance with some embodiments of the present technology are illustrated. The method 1000 may be performed in various processing chambers, including the systems 200, 300, and 600 described above. The method 1000 may include a number of optional operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technology.

[0065] Method 1000 may be performed to clean and / or purge a semiconductor processing system. The method may include optional operations before starting method 1000, or the method may include additional operations. For example, method 1000 may include operations performed in a different order than shown. In some embodiments, during the cleaning operation, at operation 1005, method 1000 may include flowing a cleaning gas to a remote plasma unit via a gas feed line. RF energy may be supplied to the remote plasma unit, which may dissociate the cleaning gas into a gas and reactive free radicals. At operation 1010, the cleaning gas (and free radicals) from the remote plasma unit may flow to a central manifold. At operation 1015, the cleaning gas stream may be divided into a plurality of series of streams within the central manifold. At operation 1020, each of the series of streams may flow through one of a plurality of side manifolds via a corresponding outlet port of the central manifold. Each outlet port may be at an angle between about 30 and 60 degrees relative to the horizontal. The side manifold may extend horizontally from the central manifold and may be bent or otherwise bent downward to couple with the inlet of the output manifold. The curvature of the side manifold can reduce the amount of circulation of cleaning gas and free radicals flowing through the flow path, which can result in reduced recombination of free radicals during cleaning operations. Reduced recombination can help reduce free radical waste and can make cleaning operations more efficient.

[0066] Each stream may flow into a respective output manifold (possibly via an isolation valve coupled between the side manifold and the output manifold). Each stream may be delivered to a respective processing chamber at operation 1025. The free radicals may react with residue on the walls of the chamber to form gaseous products that may be carried away by the stream of gas passing through the exhaust and / or foreline to clean the chamber.

[0067] In some embodiments, method 1000 may include a purge operation. The purge operation may be performed before, after, and / or independently of the cleaning operation. The purge operation may be performed before, during, and / or after deposition and / or other processing operations. When performed during a deposition operation, the purge operation may help prevent the process gas from flowing back into the system components upstream of the chamber. During the purge operation, the purge gas may flow through a gas feed line. At optional operation 1030, method 1000 may include actuating a valve coupled to the gas feed line to direct the purge gas into a central manifold, thereby bypassing the remote plasma unit. The central manifold may divide the purge gas into a plurality of series of streams, which may flow through the side manifolds via corresponding outlet ports of the central manifold. Each series of streams may flow into a corresponding output manifold (possibly via an isolation valve coupled between the side manifold and the output manifold). Each series of streams may be delivered to a corresponding processing chamber. The purge gas stream may help purge the process gas in the chamber and other system components.

[0068] In some embodiments, the method may include flowing a cooling fluid into at least one cooling channel formed within the central manifold. The cooling fluid may flow at a temperature between or about 15° C. and 50° C., which may help cool the central manifold. Such temperatures may help maintain the integrity of O-rings and / or other sealing elements, and may help increase the efficiency of free radicals during cleaning operations.

[0069] In the foregoing description, for the purpose of explanation, many details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0070] In the case of several embodiments disclosed, those skilled in the art will recognize that various modifications, alternative configurations and equivalents may be used without departing from the spirit of the embodiments. In addition, a variety of well-known processes and elements are not described in order to avoid unnecessary confusion of the present technology. Thus, the above description should not be considered to limit the scope of the present technology.

[0071] In the case of providing a range of values, it will be understood that, unless the context clearly indicates otherwise, each intermediate value between the upper and lower limits of this range is specifically disclosed until the minimum fraction of the lower limit unit. Any narrower range between any clarified value or unclarified intermediate value in the clarified range and any other clarified value or intermediate value in this clarified range is covered. The upper and lower limits of these smaller ranges can be included or excluded in the range independently, and any one, none or both of the limits are included in each range in the smaller range and are also covered in the technology, subject to any specifically excluded limits in the clarified range. In the case of clarifying that a range includes one or both of the limits, the range excluding any one or both of these included limits is also included.

[0072] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a heater" includes a plurality of such heaters and reference to "the aperture" includes reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0073] Furthermore, when used in this specification and the appended claims, the words “comprise,” “comprising,” “contain,” “containing,” “include,” and “including” are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A semiconductor processing system comprising: Cover a gas feed line comprising an RPS outlet and a bypass outlet; a remote plasma unit supported atop the cover plate, the remote plasma unit comprising an inlet and an outlet, wherein the inlet is coupled to the RPS outlet of the gas feed line; a central manifold having an RPS inlet coupled to the outlet of the remote plasma unit and a bypass inlet coupled to the bypass outlet of the gas feed line, the central manifold comprising a plurality of outlet ports; a plurality of side manifolds, each of the plurality of side manifolds being fluidly coupled to one of the plurality of outlet ports of the central manifold, wherein each of the plurality of side manifolds defines a gas lumen; as well as A plurality of output manifolds are disposed on the cover plate, wherein each of the plurality of output manifolds is fluidly coupled to the gas lumen of one of the plurality of side manifolds.

2. The semiconductor processing system of claim 1, wherein: The central manifold defines at least one cooling passage fluidly coupled to a coolant source.

3. The semiconductor processing system of claim 2, wherein: The at least one cooling channel includes an upper cooling channel and a lower cooling channel that are vertically spaced apart.

4. The semiconductor processing system of claim 1, wherein: Each of the plurality of outlet ports is angled relative to the RPS inlet and an inlet end of the gas lumen of a respective one of the plurality of side manifolds.

5. The semiconductor processing system of claim 4, wherein: Each of the plurality of outlet ports is angled between approximately 30 and 60 degrees relative to the cover plate.

6. The semiconductor processing system of claim 1, wherein: The gas lumen of each of the plurality of side manifolds includes a horizontal section proximate to a respective one of the outlet ports of the central manifold and a curved section proximate to a respective one of the plurality of output manifolds.

7. The semiconductor processing system of claim 1, further comprising: A plurality of isolation valves, wherein each of the plurality of isolation valves is fluidly coupled between one of the plurality of side manifolds and a corresponding one of the plurality of output manifolds.

8. The semiconductor processing system of claim 1, further comprising: A plurality of processing chambers are positioned below the cover plate, wherein each processing chamber defines a processing region fluidly coupled to one of the plurality of output manifolds.

9. The semiconductor processing system of claim 1, further comprising: A support structure elevates the remote plasma unit and the central manifold above a top surface of the cover plate.

10. The semiconductor processing system of claim 1, wherein: The inlet of the gas feed line is coupled to a clean gas source.

11. A semiconductor processing system comprising: Cover a gas feed line comprising an RPS outlet and a bypass outlet; a remote plasma unit supported atop the cover plate, the remote plasma unit comprising an inlet and an outlet, wherein the inlet is coupled to the RPS outlet of the gas feed line; a central manifold having an RPS inlet coupled to the outlet of the remote plasma unit and a bypass inlet coupled to the bypass outlet of the gas feed line, wherein: The central manifold includes a plurality of outlet ports; each of the plurality of outlet ports is at an angle between about 30 and 60 degrees relative to the cover plate; as well as The central manifold defines at least one cooling passage fluidly coupled to a coolant source; a plurality of side manifolds, each of the plurality of side manifolds being fluidly coupled to one of the plurality of outlet ports of the central manifold, wherein each of the plurality of side manifolds defines a gas lumen; as well as A plurality of output manifolds are disposed on the cover plate, wherein each of the plurality of output manifolds is fluidly coupled to the gas lumen of one of the plurality of side manifolds.

12. The semiconductor processing system of claim 11, wherein: The bypass inlet is fluidly coupled to the plurality of outlet ports.

13. The semiconductor processing system of claim 11, wherein: Each of the plurality of outlet ports is at an angle between approximately 120 and 150 degrees relative to the RPS inlet.

14. The semiconductor processing system of claim 11, wherein: Each of the plurality of outlet ports is at an angle between approximately 120 and 150 degrees relative to the gas lumen of a corresponding one of the plurality of side manifolds.

15. The semiconductor processing system of claim 11, wherein: The at least one cooling channel includes an upper cooling channel and a lower cooling channel that are vertically spaced apart.

16. The semiconductor processing system of claim 15, further comprising: An intermediate cooling channel section fluidly couples the upper cooling channel with the lower cooling channel.

17. A method of flowing a gas within a semiconductor processing system, comprising the steps of: flowing a cleaning gas via a gas feed line to a remote plasma unit; flowing the cleaning gas from the remote plasma unit to a central manifold; dividing the flow of the clean gas into a plurality of series flows within the central manifold; flowing each of the plurality of series flows through one of a plurality of side manifolds and to a respective one of a plurality of output manifolds via one of a plurality of outlet ports of the central manifold, wherein each of the plurality of outlet ports is at an angle between about 30 and 60 degrees relative to horizontal; as well as Each of the plurality of streams is delivered to a respective processing chamber of the plurality of processing chambers.

18. The method of flowing a gas within a semiconductor processing system of claim 17, further comprising the steps of: flowing a purge gas through the gas feed line; and A valve coupled to the gas feed line is actuated to direct the purge gas into the central manifold and bypass the remote plasma unit.

19. The method of flowing a gas within a semiconductor processing system of claim 17, further comprising the steps of: A cooling fluid is flowed into at least one cooling passage formed in the central manifold.

20. The method of flowing a gas within a semiconductor processing system of claim 19, wherein: The cooling fluid has a temperature of between about 15°C and 75°C or about 15°C or 75°C.

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