Assembly having at least one passive component

Abstract

The invention relates to an assembly (2) having at least one passive component (4), a first substrate (6), a second substrate (20) connected to the first substrate (6) in an electrically conductive manner, and a heat sink (28). In order to be able to improve heat dissipation, it is proposed that the first substrate (5) has a first conductor track (8) and a second conductor track (10), the first conductor track (8) is connected to the second conductor track (10) in an electrically conductive manner by means of the passive component (4), the second substrate (20) comprises a second dielectric material layer (22), and the second substrate (20) comprises a second dielectric material layer (22). The passive component (4) is connected in an electrically insulating and thermally conductive manner to a heat sink (28) by means of a second dielectric material layer (22) of the second substrate (20), which heat sink is arranged on a side of the second substrate (20) facing away from the first substrate (6).

Description

Technical Field

[0001] The invention relates to an assembly having at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink.

[0002] Furthermore, the invention relates to a power converter having at least one such semiconductor component.

[0003] Method for producing an assembly comprising at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink. Background Art

[0004] Such components are used, for example, in power converters. A power converter can be understood to include, for example, a rectifier, inverter, converter, or DC-DC converter. Power converters can use passive components such as capacitors, snubbers, and sensors, particularly for determining current, voltage, or temperature, which are typically connected to a substrate. Such sensors can include, for example, current measuring resistors, shunt resistors, or negative temperature coefficient thermistors (NTCs). Passive components can be arranged in current-carrying paths or in the area of ​​heat sources, for example, to achieve precise measurement results, where adequate heat dissipation must be ensured.

[0005] Published patent document WO 2020 / 249479 A1 describes an electronic switching circuit having a first circuit carrier and a second circuit carrier, as well as a first semiconductor component and a second semiconductor component. The top side of the first semiconductor component rests against the bottom of the first circuit carrier, and the bottom side of the first semiconductor component rests against the top of the second circuit carrier. The first circuit carrier has a first through-hole that connects the first semiconductor component to a first conductor track. The first circuit carrier has a second through-hole that electrically connects a connecting element arranged between the circuit carriers to a further conductor track.

[0006] In particular, sufficient heat dissipation is a challenge in the case of such planar structural technology and connection technology. Against this background, the object of the present invention is to be able to improve the heat dissipation of a component of the aforementioned type. Summary of the Invention

[0007] According to the present invention, the above object is achieved by an assembly comprising at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink, wherein the first substrate comprises a first conductor track and a second conductor track, wherein the first conductor track is electrically conductively connected to the second conductor track by means of the passive component, wherein the second substrate comprises a second dielectric material layer, and wherein the passive component is connected to the heat sink in an electrically insulating and thermally conductive manner by means of the second dielectric material layer of the second substrate, the heat sink being arranged on a side of the second substrate facing away from the first substrate, wherein the passive component is arranged on a side of the second substrate facing toward the first substrate, the passive component being embodied as at least one shunt resistor, wherein the first substrate comprises a cavity or an opening into which the passive component projects.

[0008] Furthermore, according to the present invention, the aforementioned object is achieved by an assembly comprising at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink, wherein the first substrate comprises a first conductor track and a second conductor track, wherein the first conductor track is electrically conductively connected to the second conductor track by means of the passive component, wherein the second substrate comprises a second dielectric material layer, and wherein the passive component is connected to the heat sink in an electrically insulating and thermally conductive manner by means of the second dielectric material layer of the second substrate, the heat sink being arranged on a side of the second substrate facing away from the first substrate, wherein the passive component is arranged on a side of the first substrate facing toward the second substrate, the passive component being embodied as at least one shunt resistor, wherein the passive component is arranged in a cavity in the first substrate.

[0009] Furthermore, according to the invention, the object is achieved by a power converter having at least one such component.

[0010] Furthermore, according to the present invention, the above object is achieved by a method for producing an assembly comprising at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink, wherein the first substrate comprises a first conductor track and a second conductor track, wherein an electrically conductive connection is produced between the first conductor track and the second conductor track by means of the passive component, wherein the second substrate comprises a second dielectric material layer, and wherein the passive component is connected to the heat sink in an electrically insulating and thermally conductive manner via the second dielectric material layer of the second substrate, the heat sink being arranged on a side of the second substrate facing away from the first substrate, wherein the passive component is arranged on a side of the second substrate facing toward the first substrate, the passive component being embodied as at least one shunt resistor, wherein the first substrate comprises a cavity or an opening into which the passive component projects.

[0011] Furthermore, according to the present invention, the aforementioned object is achieved by a method for producing an assembly comprising at least one passive component, a first substrate, a second substrate electrically conductively connected to the first substrate, and a heat sink, wherein the first substrate comprises a first conductor track and a second conductor track, wherein an electrically conductive connection is produced between the first conductor track and the second conductor track by means of the passive component, wherein the second substrate comprises a second dielectric material layer, and wherein the passive component is connected to the heat sink in an electrically insulating and thermally conductive manner via the second dielectric material layer of the second substrate, the heat sink being arranged on a side of the second substrate facing away from the first substrate, wherein the passive component is arranged on a side of the first substrate facing toward the second substrate, the passive component being embodied as at least one shunt resistor, wherein the passive component is arranged in a cavity in the first substrate.

[0012] Based on this consideration, the present invention includes, but is not limited to, improving heat dissipation in an assembly having passive components by connecting the passive components to a heat sink in an electrically insulating and thermally conductive manner. The passive components electrically conductively connect a first conductor track to a second conductor track. Passive components can include, but are not limited to, sensors, particularly current sensors (e.g., shunt resistors) or temperature sensors (e.g., NTCs), but can also be reactive components (e.g., snubbers). In particular, if the passive components are arranged in a current-carrying path or in a heat source area, such as a power transistor of a power converter, heat generated during operation of the assembly, particularly waste heat, can be dissipated via the heat sink. The heat sink can also include, but is not limited to, a cooling body. The first and second conductor tracks are arranged on a first substrate, which can be, but is not limited to, a PCB (printed circuit board), particularly a multi-layer PCB. The assembly also includes a second substrate electrically conductively connected to the first substrate. The second substrate comprises a dielectric material layer and can include, but is not limited to, a DCB (direct copper bonding) substrate, particularly a two-layer substrate. The passive components can be arranged on the first substrate or the second substrate to create an electrically conductive connection between the first conductor track and the second conductor track. The heat sink is arranged on a side of the second substrate facing away from the first substrate. Thus, the second substrate, which is electrically conductively connected to the first substrate, is arranged between the first substrate and the heat sink, wherein the second substrate can be placed flat on the heat sink and connected to the heat sink. The passive components are connected to the heat sink in an electrically insulating and thermally conductive manner via the second dielectric material layer of the second substrate. Therefore, heat generated during operation of the component is dissipated not only via the first and second conductor tracks, but also via the electrically insulating and thermally conductive connection to the heat sink. This additional heat flow path improves heat dissipation of the component.

[0013] The passive components are arranged on the side of the second substrate facing the first substrate. This arrangement reduces the thermal resistance to the heat sink, thereby enhancing thermal contact and, for example, improving measurement accuracy and achieving a long service life in higher-power converters with powers greater than 150 kW, in particular greater than 750 kW.

[0014] The first substrate has a cavity or opening into which the passive components protrude. The cavity or opening reduces the distance between the first substrate (especially a PCB) and the second substrate (especially a DCB), thereby reducing the required installation space. Furthermore, if semiconductor components (such as vertical power transistors) are connected to the first substrate via an additional DCB, the use of a common cooling body with a flat surface is possible. Since passive components (such as shunt resistors) typically extend beyond the thickness of such semiconductor components, the cavity or opening can compensate for this height difference.

[0015] Alternatively, the passive components are arranged on the side of the first substrate facing the second substrate.Such an assembly enables low wiring resistance to the passive components and sufficient thermal contact with the heat sink.

[0016] Passive components are arranged within the cavity of the first substrate. The depth of the cavity allows adjustment of the distance between the second and first substrates. This allows the use of a common cooling element with a flat surface when semiconductor components (such as vertical power transistors) are connected to the first substrate via an additional DCB. Passive components (such as shunt resistors) typically extend beyond the thickness of such semiconductor components, and this height difference can be compensated for by the cavity or opening.

[0017] Another embodiment provides for the passive component to be implemented as a sensor, wherein the component includes at least one terminal for contacting the sensor. For example, the sensor can be implemented as a shunt resistor containing zeranin, manganese bronze, constantan, or isaohm. The additional thermal connection of the second substrate to the heat sink allows for improved heat dissipation, thereby achieving high measurement accuracy and a long service life.

[0018] Another embodiment provides for the passive components to be arranged on the side of the first substrate facing away from the second substrate. Thermal connection to the heat sink can be achieved via the second substrate, for example, by connecting through a metallic inner layer of the first substrate. The passive components can include, but are not limited to, discrete standard surface mount (SMD) components. Such components are readily available and inexpensive.

[0019] Another embodiment provides that the passive component is electrically conductively connected to the first conductor track by means of a first contact, and the passive component is electrically conductively connected to the second conductor track by means of a second contact, wherein the passive component has an active part arranged between the first contact and the second contact, and the passive component is thermally conductively connected to the first metallization of the second substrate by means of the active part. Such an assembly achieves a good thermal connection of the passive component to the heat sink.

[0020] Another embodiment provides for a thermally conductive connection between the active portion of the passive component and the first metallization of the second substrate by a material bond. This material bond can be produced, but is not limited to, by soldering, sintering, or a thermally conductive adhesive. This material bond achieves an optimized thermal connection between the passive component and the heat sink.

[0021] Another embodiment provides that the first and second conductor tracks are each connected to the second substrate via at least one via, wherein the passive component has an active portion, and wherein the via is arranged to extend within a vertically projected surface of the active portion of the passive component. Vias (vertical interconnects) include, but are not limited to, at least partially metallic interlayer connections, for example, interconnecting metallizations of different substrate layers. This assembly ensures a small distance between the vias. For insulation reasons, it may be necessary for the vias to be covered by the second substrate. The small distances between the vias allow for a more compact second substrate, which has a positive impact on assembly costs.

[0022] Another embodiment provides that the passive component has a substantially C-shaped cross-sectional profile, wherein the contacts of the passive component are arranged to connect to the first and second conductor tracks so as to point toward each other. In particular, due to this C-shaped cross-sectional profile, the contacts of the passive component connected to the first and second conductor tracks are arranged to point toward each other. For example, the passive component may have a discontinuous circumferential profile, wherein the contacts are arranged on the outer surface of the discontinuous circumferential profile and connect to the respective conductor tracks in the discontinuous region. This ensures a small distance between the VIAs of the respective conductor tracks.

[0023] Another embodiment provides that the first width of the second substrate is smaller than the second width of the passive component. Such a substrate reduces the cost of the assembly.

[0024] Another embodiment provides that the passive component is potted, in particular completely potted. For example, a potting material is arranged between the first substrate and the second substrate, and the passive component is embedded in the potting material.

[0025] Another embodiment provides at least one semiconductor element electrically conductively connected to a passive component, and a third substrate connected to the first substrate via the semiconductor element, wherein the semiconductor element and the third substrate are arranged on a side of the first substrate facing the second substrate, wherein the third substrate includes a third dielectric material layer, and wherein the semiconductor element is electrically insulated and thermally conductively connected to a heat sink via the third dielectric material layer of the third substrate. The semiconductor element includes, but is not limited to, a vertical power transistor, particularly an insulated gate bipolar transistor (IGBT). In particular, the second and third substrates are connected to a common heat sink. The passive component (e.g., implemented as at least one shunt resistor) and the semiconductor element connected to the at least one shunt resistor may include, but is not limited to, further components of a power converter. This assembly enables efficient cooling of the shunt resistor and the semiconductor element, making it possible to dispense with a separate shunt module even at higher power levels of the power converter.

[0026] Another embodiment provides that the second substrate is thicker than the third substrate. In particular, since the discrete shunt resistors often significantly exceed the thickness of the semiconductor element in height, especially in the case of small shunt thicknesses, height compensation can be achieved by adjusting the thickness of the dielectric material layer accordingly, thereby enabling the use of a common heat sink with a flat surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Hereinafter, the invention will be described and explained in more detail with the aid of exemplary embodiments shown in the drawings.

[0028] The accompanying drawings show:

[0029] Figure 1 shows a schematic cross-sectional view of a first embodiment of an assembly with passive components,

[0030] Figure 2 shows a schematic cross-sectional view of a second embodiment of an assembly with passive components,

[0031] Figure 3 shows a schematic cross-sectional view of a third embodiment of an assembly with passive components,

[0032] Figure 4 shows a schematic illustration in plan view of a fourth embodiment of an assembly with passive components,

[0033] Figure 5 shows a schematic cross-sectional view of a fifth embodiment of an assembly with passive components,

[0034] Figure 6 shows a schematic cross-sectional view of a sixth embodiment of an assembly with passive components,

[0035] Figure 7 shows a schematic cross-sectional view of an assembly with passive components and semiconductor elements,

[0036] Figure 8 A schematic diagram of a power converter is shown. DETAILED DESCRIPTION

[0037] The embodiments described below relate to preferred embodiments of the present invention. In the embodiments, the components described in the embodiments each represent individual features of the present invention, which are considered independently of one another, which also each independently improve the present invention, and are therefore considered as components of the present invention individually or in combinations different from those shown. In addition, the described embodiments can also be supplemented by other features of the present invention that have already been described.

[0038] In the different figures, the same reference signs have the same meaning.

[0039] Figure 1 A schematic cross-sectional view shows a first embodiment of an assembly 2 having a passive component 4, which is contact-connected on a first substrate 6. The first substrate 6 is embodied as a PCB (printed circuit board) and includes a first conductor track 8 and a second conductor track 10. The first conductor track 8 is electrically conductively connected to the second conductor track 10 via the passive component 4 by material bonding, in particular soldering or sintering. Furthermore, the first substrate 6 includes, for example, three first dielectric material layers 12, made, for example, of FR4. The first and second conductor tracks 8, 10 each include parallel-connected metallizations 14, in particular copper metallizations, arranged on the first dielectric material layers 12 to achieve a higher current-carrying capacity. The parallel connection is achieved by means of vertical interconnect accesses 16 (vias), which electrically conductively connect the metallizations 14. Furthermore, the conductor tracks 8, 10 of the first substrate 6 are connected to a spacer element 18 via the vias 16, which creates an electrically and thermally conductive connection to the second substrate 20. The spacer element 18 (also called a spacer) is connected to the first substrate 6 and the second substrate 20 by material bonding, in particular by welding or sintering. Thus, the first conductor track 8 and the second conductor track 10 connected to the passive component 4 are each connected to the second substrate 20 by means of VIA 16.

[0040] The second substrate 20 is implemented as a DCB (Direct Copper Bonding) substrate and includes a second dielectric material layer 22 disposed between a first metallization 24 and a second metallization 26. The first metallization 24 is electrically and thermally connected to the second metallization 26 via the second dielectric material layer 22. The second dielectric material layer 22 may include, but is not limited to, ceramic materials (e.g., aluminum nitride or aluminum oxide), organic materials (e.g., polyamide), or organic materials filled with ceramic materials. The first and second metallizations 24 and 26 are made of copper or a copper alloy. A heat sink 28, implemented as a cooling element, is disposed on the side of the second substrate 20 facing away from the first substrate 6. The heat sink 28 is materially bonded to the second metallization 26 of the second substrate 20, for example, by soldering or sintering. This allows the passive component 4 to be electrically and thermally connected to the heat sink 28 via the second dielectric material layer 22 of the second substrate 20.

[0041] The passive component 4 is arranged on the side of the first substrate 6 facing away from the second substrate 20. The passive component includes a first contact 4a and a second contact 4b. The first contact is electrically conductively connected to the first conductor track 8, and the second contact is electrically conductively connected to the second conductor track 10. The passive component 4 also has an active part 4c. For example, the passive component 4 is embodied as a sensor, particularly a current sensor (e.g., a shunt resistor) or a temperature sensor (e.g., an NTC). At least the active part 4c of the sensor is made of an alloy, including but not limited to, zirconium, manganese copper, constantan, isomolecular, or a positive temperature coefficient resistor such as platinum.

[0042] Figure 2 1 shows a schematic cross-sectional view of a second embodiment of an assembly 2 with a passive component 4. A VIA 16 connects the conductor tracks 8, 10 to the second substrate 20, on which the passive component 4 is connected, and is arranged to extend within a vertically projected surface 30 of the active part 4c of the passive component 4, thereby Figure 1 Compared to the design in FIG. , the distance d between the vias 6 of the respective conductor tracks 8 and 10 is smaller. Since the vias 16 must be covered by the second substrate 20 for insulation reasons, a smaller distance d enables a more compact second substrate 20. In particular, the first width b1 of the second substrate 20 is smaller than the second width b2 of the passive component 4. Figure 2 Another embodiment of the component 2 is Figure 1 Corresponding to component 2 in .

[0043] Figure 3A schematic cross-sectional view of a third embodiment of an assembly 2 with a passive component 4 having a substantially C-shaped cross-sectional profile is shown. The contacts 4a, 4b of the passive component 4, which are connected to the first and second conductor tracks 8, 10, are arranged so as to point toward one another. In particular, the passive component 4 is designed as an interrupted circumferential profile, with the contacts 4a, 4b arranged on the outer surface and connected to the respective conductor tracks 8, 10 in the interrupted regions. This allows for a smaller distance d between the vias 16 of the respective conductor tracks 8, 10. In particular, the first width b1 of the second substrate 20 is smaller than the second width b2 of the passive component 4. Figure 3 Another embodiment of the component 2 is Figure 2 The corresponding components in .

[0044] Figure 4 A schematic diagram of a fourth embodiment of a component 2 with passive components 4 is shown in plan view. The two passive components 4 are exemplarily embodied as shunt resistors and are arranged on the side of the second substrate 20 facing the first substrate 6. Furthermore, the component 2 comprises terminals 32, 34 for contacting the shunt resistors. The first terminal 32 is connected to a first sensor lead 38 by means of a first connecting lead 36, while the second terminal 34 is connected to a second sensor lead 42 by means of a second connecting lead 40. The connecting leads 36, 38 are arranged in an extended manner within the vertical projection plane 30 of the active part 4c of the passive component 4. In order to save structural space, the connecting leads 36, 38 can be selectively routed one above the other on two different layers of the PCB. The sensor leads 38 are part of the first metallization 24 of the second substrate 20 and are connected to the corresponding conductor tracks 8, 10 of the first substrate 6 by means of a spacer element 18. In Figure 4 Another embodiment of the component 2 is Figure 1 The corresponding components in .

[0045] Figure 5 A schematic cross-sectional view of a fifth embodiment of an assembly 2 with a passive component 4 is shown, wherein the passive component 4 is arranged on the side of the second substrate 20 facing the first substrate 6. The first substrate 6 has a cavity 44 into which the passive component 4 projects. The assembly comprises a potting material 46 which fills the cavity 44 and into which the passive component 4 is embedded. Figure 5 Another embodiment of the component 2 is Figure 4 The corresponding components in .

[0046] Figure 6A schematic cross-sectional view of a sixth embodiment of an assembly 2 with a passive component 4 is shown, wherein the passive component 4 is arranged on the side of the second substrate 20 facing the first substrate 6. The first substrate 6 has an opening 48, into which the passive component 4 projects. The assembly comprises a potting material 46 which fills the opening 48 and into which the passive component 4 is embedded. A cover 50 closes the opening 48 on the side of the first substrate 6 opposite the passive component 4. The cover 50 is attached to the first substrate 6 before potting in a temporarily or permanently sealing manner, in particular in a material-bonded manner, and can be selectively removed after the potting material 46 has hardened. Figure 6 Another embodiment of the component 2 is Figure 5 The corresponding components in .

[0047] Figure 7 A schematic cross-sectional view of an assembly 2 having a passive component 4 and a semiconductor element 52 is shown. The passive component 4 is arranged on the side of the first substrate 6 facing the second substrate 20. The passive component 4 is thermally connected to the first metallization 24 of the second substrate 20 via an active portion 4c arranged between the first contact 4a and the second contact 4b. The thermally conductive connection between the active portion 4c of the passive component 4 and the first metallization 24 of the second substrate 20 is achieved via a material bond 54, wherein the material bond 54 can be produced, for example, by soldering, sintering, or by a thermally conductive adhesive. The passive component 4 is thermally connected to the heat sink 28 via the material bond 54. Furthermore, no spacer element 18 is required, thereby saving DCB area.

[0048] Semiconductor element 52 is electrically conductively connected to passive component 4 . Semiconductor element 52 is embodied, for example, as a vertical power transistor, in particular an insulated gate bipolar transistor (IGBT). In particular, semiconductor element 52 is configured as a low-side switch for a half-bridge of a power converter, which is connected collector-side to an AC terminal via passive component 4 embodied as a shunt resistor.

[0049] Furthermore, the component 2 includes a third substrate 56, which is connected to the first substrate 6 via the semiconductor element 52 and the spacer element 18, wherein the semiconductor element 52 and the third substrate 56 are arranged on the side of the first substrate 6 facing the second substrate 20. The third substrate 20 includes a third dielectric material layer 58, wherein the semiconductor element 52 is connected to the common heat sink 28 in an electrically insulating and thermally conductive manner via the third dielectric material layer 58 of the third substrate 56.

[0050] Common heat sink 28 has a flat surface 60. Since the height of a discrete shunt resistor typically significantly exceeds the semiconductor thickness, this height difference is compensated by PCB-side cavity 44. Passive component 4, implemented as a shunt resistor, is arranged in cavity 44 of first substrate 6. The shunt resistor and semiconductor element 52 are each embedded in potting material 46. Additionally or alternatively, height compensation can be achieved by matching the layer thickness of second dielectric material layer 22 or third dielectric material layer 58. In particular, in the case of smaller shunt thicknesses, first thickness d1 of second dielectric material layer 22 is selected to be smaller than second thickness d2 of third dielectric material layer 58.

[0051] Figure 8 A schematic diagram of a power converter 62 is shown, which includes the assembly 2 by way of example.

Claims

1. A component (2), comprising at least one passive component (4), a first substrate (6), a second substrate (20) electrically conductively connected to the first substrate (6), and a heat sink (28), in, The first substrate (6) has at least one first conductor track (8) and at least one second conductor track (10), wherein the first conductor track (8) is electrically conductively connected to the second conductor track (10) by means of the passive component (4), Wherein, the second substrate (20) comprises a second dielectric material layer (22), and The passive component (4) is connected to the heat sink (28) in an electrically insulating and thermally conductive manner by means of the second dielectric material layer (22) of the second substrate (20), and the heat sink is arranged on a side of the second substrate (20) facing away from the first substrate (6). Features The passive component (4) is arranged on a side of the second substrate (20) facing the first substrate (6), and the passive component is implemented as at least one shunt resistor. The first substrate (6) has a cavity (44) or an opening (48), and the passive component (4) protrudes into the cavity or the opening.

2. The assembly (2) according to claim 1, in, The passive component (4) is implemented as a sensor, and The component (2) comprises at least one terminal (32, 34) for contacting the sensor.

3. The assembly (2) according to claim 1 or 2, in, The passive component (4) is arranged on a side of the first substrate (6) facing away from the second substrate (20).

4. A component (2), comprising at least one passive component (4), a first substrate (6), a second substrate (20) electrically conductively connected to the first substrate (6), and a heat sink (28), in, The first substrate (6) has at least one first conductor track (8) and at least one second conductor track (10), wherein the first conductor track (8) is electrically conductively connected to the second conductor track (10) by means of the passive component (4), Wherein, the second substrate (20) comprises a second dielectric material layer (22), and Features The passive component (4) is connected to the heat sink (28) in an electrically insulating and thermally conductive manner by means of the second dielectric material layer (22) of the second substrate (20), the passive component being implemented as at least one shunt resistor, and the heat sink being arranged on a side of the second substrate (20) facing away from the first substrate (6), The passive component (4) is arranged on a side of the first substrate (6) facing the second substrate (20), The passive component (4) is arranged in a cavity (44) of the first substrate (6).

5. The assembly (2) according to claim 4, in, The passive component (4) is electrically conductively connected to the first conductor track (8) by means of a first contact (4a), and the passive component is electrically conductively connected to the second conductor track (10) by means of a second contact (4b), The passive component (4) has an active part (4c) arranged between the first contact part (4a) and the second contact part (4b), and the passive component (4) is thermally connected to the first metallization part (24) of the second substrate (20) by means of the active part.

6. The assembly (2) according to claim 5, in, A thermally conductive connecting material bond of the active part (4c) of the passive component (4) and the first metallization (24) of the second substrate (20) is produced by a material bond (54).

7. Assembly (2) according to any one of the preceding claims, in, The first conductor track (8) and the second conductor track (10) are respectively connected to the second substrate (20) by means of at least one VIA (16), wherein the passive component (4) has an active part (4c), and Wherein, the VIA (16) is arranged to extend within a vertically projected surface (30) of the active portion (4c) of the passive component (4).

8. Assembly (2) according to any one of the preceding claims, in, The passive component (4) has a substantially C-shaped cross-sectional profile, Contacts (4a, 4b) of the passive component (4) which are connected to the first conductor track and the second conductor track (8, 10) are arranged facing each other.

9. Assembly (2) according to any one of the preceding claims, in, The first width (b1) of the second substrate (20) is smaller than the second width (b2) of the passive component (4).

10. Assembly (2) according to any one of the preceding claims, in, The passive component (4) is potted, in particular completely potted.

11. Assembly (2) according to any one of the preceding claims, The assembly comprises at least one semiconductor element (52) electrically conductively connected to the passive component (4), and a third substrate (56) connected to the first substrate (6) by means of the semiconductor element (52). in, The semiconductor element (52) and the third substrate (56) are arranged on a side of the first substrate (6) facing the second substrate (20), The third substrate (56) comprises a third dielectric material layer (58), and The semiconductor element (52) is connected to the heat sink (28) in an electrically insulating and thermally conductive manner by means of the third dielectric material layer (58) of the third substrate (56).

12. Assembly (2) according to claim 11, in, The second substrate (20) is implemented to be thicker than the third substrate (56).

13. A power converter (62) having at least one component (2) according to any one of the preceding claims.

14. A method for producing a component (2), the component comprising at least one passive component (4), a first substrate (6), a second substrate (20) electrically conductively connected to the first substrate (6), and a heat sink (28), in, The first substrate (6) has a first conductor track (8) and a second conductor track (10), In this case, an electrically conductive connection is produced between the first conductor track (8) and the second conductor track (10) by means of the passive component (4). Wherein, the second substrate (20) comprises a second dielectric material layer (22), and The passive component (4) is connected to the heat sink (28) in an electrically insulating and thermally conductive manner by means of the second dielectric material layer (22) of the second substrate (20), and the heat sink is arranged on a side of the second substrate (20) facing away from the first substrate (6). Features The passive component (4) is arranged on a side of the second substrate (20) facing the first substrate (6), and the passive component is implemented as at least one shunt resistor. The first substrate (6) has a cavity (44) or an opening (48), and the passive component (4) protrudes into the cavity or the opening.

15. A method for producing a component (2), the component comprising at least one passive component (4), a first substrate (6), a second substrate (20) electrically conductively connected to the first substrate (6), and a heat sink (28), in, The first substrate (6) has a first conductor track (8) and a second conductor track (10), In this case, an electrically conductive connection is produced between the first conductor track (8) and the second conductor track (10) by means of the passive component (4). Wherein, the second substrate (20) comprises a second dielectric material layer (22), and The passive component (4) is connected to the heat sink (28) in an electrically insulating and thermally conductive manner by means of the second dielectric material layer (22) of the second substrate (20), and the heat sink is arranged on a side of the second substrate (20) facing away from the first substrate (6). Features The passive component (4) is arranged on a side of the first substrate (6) facing the second substrate (20), and the passive component is implemented as at least one shunt resistor. The passive component (4) is arranged in a cavity (44) of the first substrate (6).

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