A copper-doped silicon carbide composite material, a preparation method and application thereof

Abstract

The application provides a copper-doped silicon carbide composite material and a preparation method and application thereof, and relates to the technical field of electromagnetic wave absorbing materials.The preparation method of the copper-doped silicon carbide composite material provided by the application comprises the following steps: performing arc plasma cracking on a silicon-carbon-containing precursor to obtain the copper-doped silicon carbide composite material; the silicon-carbon-containing precursor comprises organic chlorosilane; and the anode used in the arc plasma cracking comprises copper.The copper-doped silicon carbide composite material prepared by the application has excellent electromagnetic wave absorbing performance and a large effective absorbing bandwidth.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electromagnetic wave absorbing materials, and particularly relates to a copper-doped silicon carbide composite material and a preparation method and application thereof. BACKGROUND

[0002] Electromagnetic waves play an important role in modern information life, but with the development of technology leading to the large-scale popularity of electronic devices, the electromagnetic waves will also cause a certain degree of electromagnetic pollution, which will affect the operation of precision instruments and endanger human health. With the development of national defense construction, higher requirements are put forward for the stealth of weapon equipment and military facilities, and therefore, it is of great significance to study high-performance wave absorbing materials for national defense and people's livelihood. In order to solve these problems, researchers have developed electromagnetic wave absorbing materials, which can convert electromagnetic energy into heat or other forms of energy, thereby consuming electromagnetic radiation from the source and protecting human health and improving the performance of equipment.

[0003] Electromagnetic wave absorbing materials are materials that can effectively absorb electromagnetic waves into the matrix and achieve high-efficiency attenuation, and the essence is to convert the energy of electromagnetic waves into internal energy and dissipate it. According to different wave absorbing mechanisms, the commonly used electromagnetic wave absorbing materials include magnetic loss materials and dielectric loss materials. Silicon carbide-based materials are common dielectric loss materials, but the intrinsic wave absorbing performance is limited. SUMMARY

[0004] Therefore, the purpose of the present application is to provide a copper-doped silicon carbide composite material and a preparation method and application thereof. The copper-doped silicon carbide composite material prepared by the present application has excellent electromagnetic wave absorbing performance and a large effective absorption bandwidth.

[0005] In order to achieve the above-mentioned purpose of the application, the present application provides the following technical solutions:

[0006] The present application provides a preparation method of a copper-doped silicon carbide composite material, which comprises the following steps:

[0007] The silicon-carbon-containing precursor is subjected to arc plasma cracking to obtain a copper-doped silicon carbide composite material. The silicon-carbon-containing precursor comprises an organic chlorosilane. The anode used in the arc plasma cracking comprises copper.

[0008] Preferably, the arc power of the arc plasma cracking is 1-100 kW.

[0009] Preferably, the arc starting atmosphere gas used in the arc plasma cracking comprises one or more of argon, nitrogen, hydrogen and helium.

[0010] Preferably, the flow rate of the arc starting atmosphere gas used in the arc plasma cracking is 0.2-30 L / min.

[0011] Preferably, the organic chlorosilane comprises one or more of methyltrichlorosilane, dimethyldichlorosilane and trimethylchlorosilane.

[0012] Preferably, the feeding amount of the silicon-carbon-containing precursor is 0.1-2000 g / min.

[0013] Preferably, after the arc plasma cracking, the obtained solid product is sequentially subjected to alkali washing and drying to obtain the copper-doped silicon carbide composite material.

[0014] The application provides the copper-doped silicon carbide composite material prepared by the preparation method.

[0015] Preferably, the crystal form of the silicon carbide in the copper-doped silicon carbide composite material is beta type.

[0016] The application provides the application of the copper-doped silicon carbide composite material in a wave-absorbing material.

[0017] The application provides a preparation method of a copper-doped silicon carbide composite material. In the application, copper is used as an anode, and organic chlorosilane is introduced as a raw material. The high activity of Cl plasma is used to prepare silicon carbide, and the thermal excitation and chemical reaction stripping of the copper anode are performed, so that the copper enters the silicon carbide lattice to obtain the copper-doped silicon carbide composite material. In the application, the electrical conductivity and magnetic properties of copper have good electromagnetic wave absorption capacity in the microwave frequency band, and can effectively convert electromagnetic wave energy into heat energy, thereby reducing or eliminating reflection and transmission and improving the absorption rate of the material. At the same time, copper doping can introduce additional interfaces and lattice defects, increase the electromagnetic wave energy loss path of the material, and the multiple loss mechanisms help to expand the absorption bandwidth of the material. The copper-doped silicon carbide composite material prepared by the application has excellent microwave absorption performance and a large effective absorption bandwidth. The preparation method provided by the application is simple and suitable for popularization and application.

[0018] The application has the following beneficial effects:

[0019] The application uses organic chlorosilane as a silicon-carbon-containing precursor, which is low in price, safe and efficient, can provide silicon and carbon at the same time, and can prepare silicon carbide; chlorine elements form chlorine plasma in the plasma, which has higher activity and excites more copper into the system;

[0020] The application uses arc thermal excitation and chlorine plasma high reactivity to complete copper-doped silicon carbide.

[0021] The application obtains the dielectric parameters of the copper-doped silicon carbide composite material by means of a vector network analyzer, and calculates that the copper-doped silicon carbide composite material has excellent wave-absorbing performance and wide wave-absorbing bandwidth according to the transmission line theory.

[0022] The preparation method described in the application is continuous and efficient, and is a synthesis method that can be used on a large scale. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 Preparation principle diagram of the copper-doped silicon carbide composite material of the application;

[0024] Figure 2 XRD diagram of the copper-doped silicon carbide composite material prepared in Examples 1-3 of the application;

[0025] Figure 3 TEM diagram of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0026] Figure 4 HRTEM diagram of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0027] Figure 5 Reflection loss value diagram of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0028] Figure 6 Real part value diagram of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0029] Figure 7 Imaginary part value diagram of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0030] Figure 8 Tangent value diagram of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0031] Figure 9 Real part value diagram of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0032] Figure 10 Imaginary part value diagram of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0033] Figure 11 Tangent value diagram of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the application;

[0034] Figure 12 Structural schematic diagram of an arc plasma generator;

[0035] Figure 13 Reflection loss value diagram of the copper-doped silicon carbide composite material prepared in Example 2 of the application;

[0036] Figure 14 Reflection loss value diagram of the copper-doped silicon carbide composite material prepared in Example 3 of the application. DETAILED DESCRIPTION

[0037] The application provides a preparation method of copper-doped silicon carbide composite material, which comprises the following steps:

[0038] The silicon-carbon-containing precursor is subjected to arc plasma cracking to obtain the copper-doped silicon carbide composite material; the silicon-carbon-containing precursor comprises an organic chlorosilane; and the anode used in the arc plasma cracking comprises copper.

[0039] Unless otherwise specified, the materials and equipment used in the application are commercially available in the art.

[0040] The silicon-carbon-containing precursor is subjected to arc plasma cracking to obtain the copper-doped silicon carbide composite material. In the application, the silicon-carbon-containing precursor comprises an organic chlorosilane. In the application, the organic chlorosilane preferably comprises one or more of methyltrichlorosilane, dimethyldichlorosilane and trimethylchlorosilane. In the application, the feeding amount of the silicon-carbon-containing precursor is preferably 0.1-2000 g / min, more preferably 0.175-2 g / min, and further preferably 0.5-1 g / min. In specific embodiments, the feeding amount of the silicon-carbon-containing precursor can be 0.5 g / min, 1 g / min, 2 g / min, 100 g / min, 500 g / min, 1000 g / min or 1500 g / min. In the application, the carbon-containing chlorosilane is used as the carbon-containing and silicon-containing precursor to prepare silicon carbide, and the Cl element is in a plasma high-activity state in a plasma environment, which is conducive to improving the doping rate and doping effect of copper.

[0041] In the application, the anode used in the arc plasma cracking comprises copper, and is specifically a copper sleeve.

[0042] In the application, the arc power of the arc plasma cracking is preferably 1-100 kW, more preferably 2-10 kW, and further preferably 5-8 kW. In specific embodiments, the arc power of the arc plasma cracking can be 1.6 kW, 2.2 kW, 2.9 kW, 10 kW, 20 kW, 30 kW, 40 kW, 50 kW, 60 kW, 70 kW, 80 kW or 90 kW.

[0043] In the present application, the starting arc atmosphere gas for the arc plasma cracking preferably comprises one or more of argon, nitrogen, hydrogen and helium, and more preferably is argon. In the present application, the flow rate of the starting arc atmosphere gas for the arc plasma cracking is preferably 0.2-30 L / min, more preferably 1-20 L / min, and further preferably 2-10 L / min. In specific embodiments, the flow rate of the starting arc atmosphere gas for the arc plasma cracking can be 1 L / min, 2 L / min, 5 L / min, 10 L / min, 15 L / min, 20 L / min or 25 L / min. The present application uses the above-mentioned starting arc atmosphere gas to create a reaction atmosphere and control the reaction pressure for generating an arc.

[0044] In the present application, after the arc plasma cracking, the obtained solid product is preferably sequentially subjected to alkaline washing and drying to obtain a copper-doped silicon carbide composite material. In specific embodiments of the present application, the arc plasma cracking forms gaseous copper-doped silicon carbide; and the gaseous copper-doped silicon carbide is cooled to a solid product in the arc plasma generator. In the present application, the alkaline solution used in the alkaline washing is preferably a NaOH solution; and the concentration of the NaOH solution is preferably 0.01-1 mol / L, and more preferably 0.1-0.5 mol / L. In the present application, the ratio of the amount of the solid product to the amount of the NaOH solution is preferably 2 g:100 mL. In the present application, the alkaline washing is preferably performed under ultrasonic conditions; and the ultrasonic time is preferably 30 min. The present application removes HCl adsorbed on the surface of the solid product and residual raw materials by alkaline washing. The present application preferably performs a rinsing suction filtration after the alkaline washing. In the present application, the washing liquid used in the rinsing suction filtration is preferably water, and more preferably deionized water. In specific embodiments of the present application, the rinsing suction filtration refers to washing while suction filtration. In the present application, the drying temperature is preferably 105°C; and the drying time is preferably 2 h. In the present application, the drying is preferably performed in a vacuum oven.

[0045] In specific embodiments of the present application, the arc plasma cracking is performed in an arc plasma generator; the structure of the arc plasma generator is as shown in Figure 12 The anode of the arc plasma generator is a copper sleeve, and the cathode is a rod-shaped structure; and the material of the cathode is graphite. In the present application, the preparation method of the copper-doped silicon carbide composite material is preferably as follows: using an organic chlorosilane as a silicon-carbon-containing precursor, starting an arc under the action of a starting arc atmosphere gas, using a copper sleeve as an anode, and using an arc plasma method to crack the silicon-carbon-containing precursor in a plasma environment to obtain a solid product; removing HCl adsorbed on the surface of the solid product and residual raw materials by NaOH solution alkaline washing, and obtaining a copper-doped silicon carbide composite material after rinsing suction filtration and drying.

[0046] As an embodiment of the present application, the preparation method of the copper-doped silicon carbide composite material is as follows: the air in the arc plasma generator is replaced by argon, the arc is ignited by starting the power supply in the argon atmosphere, after the operation is stable, the methyltrichlorosilane in the bubbler is carried into the arc plasma generator by argon for cracking, forming gaseous copper-doped silicon carbide, and the gaseous copper-doped silicon carbide is deposited in the arc plasma generator along the direction of the plasma jet, the solid product is collected, the HCl adsorbed on the surface of the solid product and the residual raw material are removed by alkali washing with NaOH solution, and the copper-doped silicon carbide composite material is obtained after rinsing, suction filtration and drying.

[0047] The present application provides the copper-doped silicon carbide composite material prepared by the preparation method described in the above technical solution. In the present application, the crystal form of the silicon carbide in the copper-doped silicon carbide composite material is preferably β type. In the specific embodiments of the present application, the silicon carbide in the copper-doped silicon carbide composite material is β-SiC. In the present application, the copper-doped silicon carbide composite material is preferably a copper-doped nanoscale silicon carbide composite material; the size of the copper-doped silicon carbide composite material is preferably 20-500 nm, and more preferably 50-100 nm. In the present application, copper is doped into the SiC crystal lattice in the form of a copper-silicon solid solution, replacing the C atoms therein. In the present application, the copper-silicon solid solution preferably includes one or more of Cu 6.69 Si and Cu3Si. In the specific embodiments of the present application, the surface residual copper chloride compounds such as CuCl2 formed by Cl oxidation are removed in the rinsing and suction filtration process.

[0048] The present application provides the application of the copper-doped silicon carbide composite material described in the above technical solution in wave-absorbing materials, preferably as electromagnetic wave-absorbing materials, and more preferably as microwave-absorbing materials.

[0049] The technical solutions in the present application will be described clearly and completely in combination with the embodiments in the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0050] The structure of the arc plasma generator used in the embodiments is shown in Figure 12 The anode of the arc plasma generator is a copper sleeve, and the cathode is a rod-shaped structure; the material of the cathode is graphite.

[0051] Figure 1 The principle diagram for preparing the copper-doped silicon carbide composite material in the copper sleeve by using organic chlorosilane in the present application.

[0052] Embodiment 1

[0053] The air in the arc plasma generator was replaced by argon, argon was continuously introduced at a flow rate of 2 L / min, the power supply was started to ignite the arc in the argon atmosphere, the arc power was set to 2.2 kW, and after stable operation, the methyltrichlorosilane in the bubbler was brought into the arc plasma generator for cracking by argon, the feeding amount was 175 mg / min, gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide was deposited in the arc plasma generator along the direction of the plasma jet, and a solid product was collected;

[0054] 2 g of the collected solid product was added to 100 mL of a 0.5 mol / L NaOH solution, ultrasonic treatment was performed for 30 min, and the solid material was washed with deionized water while being filtered, and the obtained solid material was placed in a vacuum oven at 105℃ for 2 h to obtain a copper-doped silicon carbide composite material.

[0055] Example 2

[0056] The preparation method was basically the same as that of Example 1, except that the arc power was adjusted to 1.6 kW.

[0057] Example 3

[0058] The preparation method was basically the same as that of Example 1, except that the arc power was adjusted to 2.9 kW.

[0059] Test Example

[0060] Examples 1-3 illustrate the influence of different arc powers on the copper doping effect.

[0061] Figure 2 The XRD spectrum of the copper-doped silicon carbide composite material prepared under different arc power conditions of the present application can be seen from Figure 2 It can be seen that there are obvious characteristic peaks at 26.1°, 28.8°, 35.7°, 41.4°, 60.2° and 71.8°, wherein the 26.1° position is the diffraction surface of the graphite (002) crystal plane, the 28.8° position is the diffraction surface of the CuCl2(111) crystal plane; the 35.7°, 41.4°, 60.2° and 71.8° positions correspond to the (111), (200), (220) and (311) crystal planes of β-SiC, respectively. Enlarging the 43°-50° range, it is observed that the peak lines at 43.2° and 46.3° correspond to Cu 6.69The (002) and (101) crystal planes of Si; the peak lines at 44.6° and 45.2° correspond to the (012) and (300) crystal planes of Cu3Si. It is shown that multiple Cu-Si solid solutions appear in the composite material, and Cu can quickly enter the beta-SiC crystal lattice at high temperature to realize copper doping due to the high diffusion coefficient of Cu.

[0062] Figure 3 The TEM image of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows that there are obvious differences in contrast in the particles, and the particle size of the darker color is less than 10 nm.

[0063] Figure 4 The HRTEM image of the copper-doped silicon carbide composite material prepared in Example 1 of the present application can determine the formation of copper-silicon solid solution by comparing the parameters of the standard card, which proves the feasibility of the method for preparing the copper-doped silicon carbide composite material.

[0064] Figure 5 The reflection loss value graph of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows that the copper-doped silicon carbide composite material has an RL min of-44.56 dB at 14.52 GHz, and a maximum absorption bandwidth of up to 5.2 GHz, reaching the strength index (RL min <-30 dB) of an excellent wave-absorbing material, indicating that the copper-doped silicon carbide composite material exhibits excellent wave-absorbing performance.

[0065] Figure 6 The real part value graph of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows a decrease overall in the test waveband (2-18 GHz).

[0066] Figure 7 The imaginary part value graph of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows a downward trend in the 2-8 GHz frequency band, and then an upward trend in the 8-18 GHz range, indicating that the copper-doped silicon carbide composite material has directionality for the loss of high-frequency electric field.

[0067] Figure 8 The tangent value graph of the dielectric loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows a significant increase in the value in the range of 15-17 GHz.

[0068] Figure 9 The real part value graph of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present application shows a slight fluctuation in the value in the 2-18 GHz frequency band, and the value slowly changes between 0.9 and 1.1.

[0069] Figure 10This is a graph of the imaginary part of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present invention, and its value oscillates significantly in the frequency range of 2 to 18 GHz.

[0070] Figure 11 This is a graph of the tangent value of the magnetic loss of the copper-doped silicon carbide composite material prepared in Example 1 of the present invention, and its value oscillates significantly in the frequency range of 2 to 18 GHz.

[0071] Combine Figures 1-11 As shown in the figure, when the copper-doped silicon carbide composite material is matched with a thickness of 8 mm, RL min The value at 14.52GHz is -44.56dB, and the maximum absorption bandwidth is as high as 5.2GHz, reaching the strength index of excellent absorbing materials (RL min <-30dB), indicating that the copper-doped silicon carbide composite exhibits excellent microwave absorption properties. Furthermore, the tangent of the magnetic loss is greater than the tangent of the dielectric loss, indicating that the magnetic loss of the copper-doped silicon carbide composite dominates its overall energy loss. This indirectly confirms that copper doping in nano-silicon carbide composites exhibits a magnetic loss mechanism similar to that of magnetic materials such as iron, cobalt, and nickel.

[0072] Figure 13 This is a graph showing the reflection loss value of the copper-doped silicon carbide composite material prepared in Example 2. Figure 14 This is a graph showing the reflection loss value of the copper-doped silicon carbide composite material prepared in Example 3. Figures 13-14 It can be seen that the copper-doped silicon carbide composite material prepared by the present invention has excellent microwave absorption performance.

[0073] According to the preparation process of the copper-doped silicon carbide composite material and the microwave absorption performance test results, the copper-doped silicon carbide composite material prepared under the condition of an arc power of 2.2 kW in Example 1 has the best microwave absorption performance.

[0074] Effects of different arc starting atmosphere gases on copper doping in Examples 4 to 6

[0075] Argon was used to replace the air in the arc plasma generator, and an arc-starting atmosphere gas was continuously introduced at a flow rate of 2 L / min. The power supply was started to ignite the arc in the atmosphere of the arc-starting atmosphere gas (argon, nitrogen, and helium, respectively, in Examples 4, 5, and 6). The arc power was set to 5 kW. After the operation was stable, the methyl silicon trichloride in the bubbler was brought into the interior of the arc plasma generator by the arc-starting atmosphere gas for cracking. The feed rate was 0.5 g / min to form gaseous copper-doped silicon carbide. The gaseous copper-doped silicon carbide was deposited inside the arc plasma generator along the direction of the plasma jet, and a solid product was collected;

[0076] 2 g of the collected solid product was added to 100 mL of 0.5 mol / L NaOH solution and ultrasonicated for 30 min, washed with deionized water while suction filtering, and the obtained solid substance was placed in a vacuum oven at 105°C for 2 h to obtain a copper-doped silicon carbide composite material.

[0077] According to the test results of Examples 4-6, the copper doping effects of different arc atmosphere gases are similar.

[0078] Effects of different organic chlorosilanes on copper doping in Examples 7-9

[0079] The air in the arc plasma generator was replaced with argon, and argon was continuously introduced at a flow rate of 2 L / min. The power supply was started to ignite the arc in an argon atmosphere, and the arc power was set to 5 kW. After stable operation, the organic chlorosilane (methyltrichlorosilane, dimethyldichlorosilane, and trimethylchlorosilane for Examples 7, 8, and 9, respectively) in the bubbler was brought into the arc plasma generator by argon for cracking, with a feed rate of 0.5 g / min. Gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide deposited inside the arc plasma generator along the direction of the plasma jet. The solid product was collected.

[0080] 2 g of the collected solid product was added to 100 mL of 0.5 mol / L NaOH solution and ultrasonicated for 30 min, washed with deionized water while suction filtering, and the obtained solid substance was placed in a vacuum oven at 105°C for 2 h to obtain a copper-doped silicon carbide composite material.

[0081] According to the test results of Examples 7-9, all carbon-containing organic chlorosilanes can successfully prepare copper-doped silicon carbide composite materials. The stoichiometric ratio of carbon to silicon in methyltrichlorosilane is 1:1, which can provide silicon atoms and carbon atoms according to the chemical formula of silicon carbide (SiC), making it the preferred organic chlorosilane raw material.

[0082] Effects of different feed rates on copper doping in Examples 10-12

[0083] The air in the arc plasma generator was replaced with argon, and argon was continuously introduced at a flow rate of 2 L / min. The power supply was started to ignite the arc in an argon atmosphere, and the arc power was set to 10 kW. After stable operation, the methyltrichlorosilane in the bubbler was brought into the arc plasma generator by argon for cracking. The feed rates for Examples 10, 11, and 12 were 0.5 g / min, 1 g / min, and 5 g / min, respectively. Gaseous copper-doped silicon carbide was formed, and the gaseous copper-doped silicon carbide deposited inside the arc plasma generator along the direction of the plasma jet. The solid product was collected.

[0084] The 2 g of the collected solid product was added to 100 mL of 0.5 mol / L NaOH solution and ultrasonically treated for 30 min, rinsed with deionized water and suction filtered, and the obtained solid substance was placed in a vacuum oven at 105°C for 2 h to obtain a copper-doped silicon carbide composite material.

[0085] According to the test results of Examples 10-12, for 10 kW arc power, while ensuring the copper doping effect, the preferred feeding amount is 1 g / min.

[0086] The above only describes the preferred embodiments of the present application, and it should be noted that for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A method for preparing a copper-doped silicon carbide composite material, comprising the steps of: performing arc plasma pyrolysis on a silicon-carbon-containing precursor to obtain a copper-doped silicon carbide composite material; wherein the silicon-carbon-containing precursor comprises an organochlorosilane; and wherein the anode used in the arc plasma pyrolysis comprises copper.

2. The method of claim 1, wherein the arc power of the arc plasma pyrolysis is 1-100 kW.

3. The method of claim 1, wherein the arc atmosphere gas used in the arc plasma pyrolysis comprises one or more of argon, nitrogen, hydrogen, and helium.

2. The production method according to claim 1, characterized by, 4. The method of claim 1, wherein the flow rate of the arc atmosphere gas used in the arc plasma pyrolysis is 0.2-30 L / min.

3. The preparation method according to claim 1, characterized in that 5. The method of claim 1, wherein the organochlorosilane comprises one or more of methyltrichlorosilane, dimethyldichlorosilane, and trimethylchlorosilane.

4. The production method according to claim 3, characterized by, 6. The method of claim 1, wherein the feeding amount of the silicon-carbon-containing precursor is 0.1-2000 g / min.

5. The preparation method according to claim 1, characterized in that 7. The method of claim 1, further comprising sequentially performing alkali washing and drying on the obtained solid product after the arc plasma pyrolysis to obtain the copper-doped silicon carbide composite material.

6. The production method according to claim 1 or 5, characterized by, 8. A copper-doped silicon carbide composite material prepared by the method of any one of claims 1-7.

7. The preparation method according to claim 1, characterized in that 9. The copper-doped silicon carbide composite material of claim 8, wherein the crystal form of silicon carbide in the copper-doped silicon carbide composite material is β-type.

10. Use of the copper-doped silicon carbide composite material of any one of claims 8-9 in a wave-absorbing material.

9. The copper-doped silicon carbide composite material of claim 8, wherein, ​ ​

Images