Drainage device, wafer cleaning equipment and control method of drainage device

Abstract

The invention provides a drainage device, wafer cleaning equipment and a control method of the drainage device. The drainage device includes: a recovery container; one end of the first fluid pipeline is used for being communicated with a drainage port of a cleaning chamber of the wafer cleaning equipment, and the other end of the first fluid pipeline is communicated with a fluid inlet of the recovery container; one end of the second fluid pipeline is used for being communicated with a fluid drainage opening of the cleaning cavity, and the other end of the second fluid pipeline is used for being communicated with a fluid treatment device; the switching assembly is used for selectively controlling connection and disconnection of the first fluid pipeline and the second fluid pipeline; and the negative pressure device is communicated with the gas outlet of the recovery container and is used for responding to the switching assembly to control the first fluid pipeline to be disconnected and extracting gas in the recovery container.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular, to a drainage device, a wafer cleaning device, and a control method for the drainage device. Background Art

[0002] Current semiconductor manufacturing often uses wet cleaning to process wafers. After wet cleaning, the water remaining on the wafer surface needs to be removed through a wafer drying process. The wafer drying process usually uses a vacuum pump to extract the gas in the cleaning chamber to form a negative pressure environment, and uses the low-pressure drying principle to quickly evaporate the isopropyl alcohol vapor (IPA) on the wafer surface to achieve the purpose of drying.

[0003] In the related art, it is usually necessary to wait until the cleaning liquid drainage process in the cleaning chamber is completed before starting the vacuum pump to extract the gas in the cleaning chamber. It takes a certain amount of time to extract the gas to form the expected negative pressure environment in the cleaning chamber, which causes the wafer to have to wait for a long time before drying, which is not conducive to the drying of the wafer surface. Summary of the invention

[0004] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a drainage device, a wafer cleaning equipment and a control method for the drainage device to improve the problem of a negative pressure environment being formed for too long.

[0005] In order to achieve the purpose of the present disclosure, a drainage device is provided, which is applied to wafer cleaning equipment, and the drainage device includes: a recovery container; a first fluid pipeline, one end of which is used to communicate with the drainage port of the cleaning chamber of the wafer cleaning equipment, and the other end is connected to the inlet of the recovery container; a second fluid pipeline, one end of which is used to communicate with the drainage port of the cleaning chamber, and the other end is used to communicate with a fluid processing device; a switching component, which is used to selectively control the connection and disconnection of the first fluid pipeline and the second fluid pipeline; and a negative pressure device, which is connected to the gas outlet of the recovery container, and is used to extract the gas in the recovery container in response to the switching component controlling the disconnection of the first fluid pipeline.

[0006] In some embodiments, the switching component includes a controller, and the switching component is used to selectively control the opening and closing of the first fluid pipeline and the second fluid pipeline under the control of the controller.

[0007] In some embodiments, the drainage device also includes a third fluid pipeline, one end of which is used to communicate with the drainage port of the cleaning chamber, and the other end is connected to the negative pressure device, wherein the switching component is also used to selectively control the on and off of the third fluid pipeline under the control of the controller.

[0008] In some embodiments, the discharge device also includes a fourth fluid pipeline, one end of which is connected to the air outlet of the recovery container and the other end is connected to the negative pressure device, wherein the switching component is also used to selectively control the opening and closing of the fourth fluid pipeline under the control of the controller.

[0009] In some embodiments, the drainage device also includes a fifth fluid pipeline, one end of which is used to communicate with the inlet of the cleaning chamber, and the other end is connected to the negative pressure device, wherein the switching component is also used to selectively control the opening and closing of the fifth fluid pipeline under the control of the controller.

[0010] In some embodiments, the switching component includes a first on-off valve and a second on-off valve, wherein the first on-off valve is arranged in the first fluid pipeline; the second on-off valve is arranged in the second fluid pipeline; the controller is used to open the second on-off valve and close the first on-off valve in response to the introduction of cleaning solution into the cleaning tank in the cleaning chamber.

[0011] In some embodiments, the switching component also includes a third on-off valve, wherein the third on-off valve is arranged in the third fluid pipeline; the controller is used to open the third on-off valve in response to drying the wafers in the cleaning chamber, and is used to close the third on-off valve in response to completion of drying the wafers in the cleaning chamber.

[0012] In some embodiments, the switching component also includes a fourth on-off valve, wherein the fourth on-off valve is arranged in the fourth fluid pipeline; the controller is used to open the fourth on-off valve in response to the introduction of cleaning solution into the cleaning tank in the cleaning chamber, and / or to close the fourth on-off valve in response to drying the wafer in the cleaning chamber.

[0013] In some embodiments, the switching component also includes a fifth on-off valve, wherein the fifth on-off valve is arranged in the fifth fluid pipeline; the controller is used to open the fifth on-off valve in response to the introduction of cleaning solution into the cleaning tank in the cleaning chamber, and / or to open the fifth on-off valve in response to drying the wafers in the cleaning chamber; and the controller is also used to close the fifth on-off valve in response to the completion of drying the wafers in the cleaning chamber.

[0014] As another technical solution, the present disclosure further provides a wafer cleaning device, which includes a cleaning chamber, a cleaning tank, a carrying device and the above-mentioned drainage device, wherein the cleaning tank is arranged in the cleaning chamber, and the carrying device is used to carry the wafer.

[0015] In some embodiments, the wafer cleaning equipment also includes: a shielding assembly, which is arranged between the circumferential inner wall of the cleaning chamber and the circumferential outer wall of the cleaning tank, and is used to prevent the atomized material or sputtered particles of the cleaning solution below the shielding assembly from reaching above the shielding assembly, and the shielding assembly has a fluid channel for allowing the gas above the shielding assembly to pass through.

[0016] In some embodiments, the shielding assembly includes: a first shielding member, which is arranged on the circumferential outer wall of the cleaning tank and extends along the circumference of the cleaning tank, and a second shielding member, which is arranged on the circumferential inner wall of the cleaning chamber and extends along the circumference of the cleaning chamber, wherein the orthographic projection of the first shielding member on the radial cross-section of the cleaning chamber at least partially overlaps with the orthographic projection of the second shielding member on the radial cross-section of the cleaning chamber, and the first shielding member and the second shielding member are spaced apart in the vertical direction to form the fluid channel.

[0017] In some embodiments, in the vertical direction, the first shielding member is located above the second shielding member and close to the opening of the cleaning tank, and the upper surface of the first shielding member is inclined downward in a direction away from the circumferential outer wall of the cleaning tank.

[0018] As another technical solution, the present disclosure also provides a control method for a drainage device, which is applied to the above-mentioned drainage device, and the control method includes: in response to the introduction of cleaning liquid into the cleaning tank in the cleaning chamber, controlling the second fluid pipeline to be connected through the switching component, and controlling the first fluid pipeline to be disconnected, so as to discharge the cleaning liquid overflowing into the cleaning chamber into the fluid processing device; and extracting the gas in the recovery container through the negative pressure device to form a negative pressure environment inside the recovery container.

[0019] In some embodiments, the control method also includes: in response to the cleaning liquid in the cleaning tank being discharged into the cleaning chamber, controlling the first fluid pipeline to be connected and controlling the second fluid pipeline to be disconnected through the switching component to discharge the cleaning liquid in the cleaning chamber into the recovery container in a negative pressure state.

[0020] In some embodiments, the control method further includes: in response to drying the wafer in the cleaning chamber, controlling the third fluid pipeline to be connected through the switching component, and extracting gas in the cleaning chamber through the negative pressure device.

[0021] In some embodiments, the control method further includes: in response to drying the wafer in the cleaning chamber, controlling the fourth fluid pipeline and the fifth fluid pipeline to be connected through the switching component.

[0022] The present disclosure has the following beneficial effects:

[0023] The present disclosure provides a drainage device, which includes a recovery container, a first fluid pipeline, a second fluid pipeline, a switching component and a negative pressure device. One end of the first fluid pipeline is used to communicate with the drainage port of the cleaning chamber of the wafer cleaning equipment, and the other end is used to communicate with the inlet of the recovery container. One end of the second fluid pipeline is used to communicate with the drainage port of the cleaning chamber of the wafer cleaning equipment, and the other end is used to communicate with the fluid processing device. The switching component is used to selectively control the on and off of the first fluid pipeline and the second fluid pipeline. The negative pressure device is connected to the gas outlet of the recovery container, and is used to extract the gas in the recovery container in response to the switching component controlling the disconnection of the first fluid pipeline. While the cleaning solution is introduced into the cleaning chamber, the first fluid pipeline can be disconnected and the second fluid pipeline can be connected by the switching component to discharge the cleaning solution overflowing into the cleaning chamber into the fluid processing device. When the cleaning chamber is connected to the second fluid pipeline, the first fluid pipeline remains disconnected, so that the cleaning chamber and the recovery container are not connected. The negative pressure device can extract the gas in the recovery container in response to the switching component controlling the first fluid pipeline to be disconnected, so that the recovery container forms the expected negative pressure environment in advance. On this basis, when the switching component controls the second fluid pipeline to be disconnected and controls the first fluid pipeline to be connected, so that the cleaning chamber and the recovery container in the negative pressure state are connected, the cleaning chamber can quickly discharge the cleaning liquid into the recovery container in the negative pressure state.

[0024] The wafer cleaning equipment provided by the present disclosure comprises a cleaning chamber, a cleaning tank, a carrying device and the above-mentioned drainage device provided by the present disclosure, wherein the cleaning tank is arranged in the cleaning chamber, and the carrying device is used to carry the wafer. In this way, while the cleaning liquid is introduced into the cleaning tank in the cleaning chamber, the second fluid pipeline can be controlled to be connected and the first fluid pipeline can be controlled to be disconnected by the switching component, so that the cleaning liquid overflowing into the cleaning chamber can be discharged into the fluid processing device. While the cleaning chamber is connected with the second fluid pipeline, since the first fluid pipeline remains disconnected, the cleaning chamber and the recovery container are not connected, and the negative pressure device can extract the gas in the recovery container in response to the switching component controlling the first fluid pipeline to be disconnected, so that the recovery container forms the expected negative pressure environment in advance. On this basis, when the wafer is taken out of the cleaning tank, the switching component controls the second fluid pipeline to be disconnected and controls the first fluid pipeline to be connected, so that the cleaning chamber and the recovery container in a negative pressure state are connected, and the cleaning liquid can be quickly discharged into the recovery container.

[0025] The control method of the drainage device provided by the present disclosure adopts the above-mentioned drainage device provided by the present disclosure, including that while the cleaning liquid is introduced into the cleaning tank in the cleaning chamber, the second fluid pipeline is controlled to be connected and the first fluid pipeline is controlled to be disconnected through the switching component, so as to discharge the cleaning liquid overflowing into the cleaning chamber into the fluid processing device, and while the cleaning chamber is connected with the second fluid pipeline, the negative pressure device responds to the switching component to control the first fluid pipeline to disconnect the gas extracted from the recovery container, so that a negative pressure environment is formed inside the recovery container. In this process, since the first fluid pipeline remains disconnected, the recovery container forms the expected negative pressure environment in advance. On this basis, when the wafer is taken out of the cleaning tank, the switching component controls the second fluid pipeline to be disconnected and controls the first fluid pipeline to be connected, so that the cleaning chamber is connected to the recovery container in a negative pressure state, and the cleaning liquid can be quickly discharged into the recovery container.

[0026] List of reference numerals:

[0027] 1. Wafer cleaning equipment; 10. Cleaning chamber; 100. Chamber body; 101. Sealing cover; 102. Drain port; 103. Gas outlet pipeline; 104. Circumferential inner wall; 105. Inlet port; 11. Cleaning tank; 110. Cleaning tank drain valve; 111. Cleaning tank inlet pipe section; 112. Circumferential outer wall; 12. Carrying device; 13. Shielding assembly; 130. Fluid channel; 131. First shielding member; 1310. Outer edge; 132. Second shielding member; 1320. Inner edge; 20. Fluid supply device; 21. Inert gas supply pipeline; 22. Inert gas inlet; 23. Replacement medium supply pipeline; 24. Replacement medium inlet; 25. Cleaning liquid supply pipeline; 30. Drain device; 300. Recovery container; 301. Negative pressure device; 302. Inlet; 303. Air outlet; 310. First fluid pipeline; 311. First on-off valve; 320. Second fluid pipeline; 321. Second on-off valve; 330. Third fluid pipeline; 331. Third on-off valve; 340. Fourth fluid pipeline; 341. Fourth on-off valve; 350. Fifth fluid pipeline; 351. Fifth on-off valve; 360. Exhaust pipeline; 370. Drain pipeline; L1. First pipe section; S1. First node; S2. Second node; S3. Third node; W. Wafer; a. Channel length; b. Passage

[0028] Road height BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of a wafer cleaning device provided in an embodiment of the present disclosure;

[0030] Figure 2 A schematic diagram of an example of a flow discharge device provided by an embodiment of the present disclosure when a second fluid pipeline is connected, wherein the pipeline in which the flow discharge device is disconnected in this example is not shown;

[0031] Figure 3 A schematic diagram of an example of a flow discharge device provided by an embodiment of the present disclosure when a first fluid pipeline is connected, wherein the pipeline in which the flow discharge device is disconnected in this example is not shown;

[0032] Figure 4 A schematic diagram of an example of a drainage device provided by an embodiment of the present disclosure when a third fluid pipeline is connected, wherein the pipeline in which the drainage device is disconnected in this example is not shown;

[0033] Figure 5 A schematic diagram of an example of a flow discharge device provided in an embodiment of the present disclosure when a fifth fluid pipeline is connected, wherein the pipeline in which the flow discharge device is disconnected in this example is not shown;

[0034] Figure 6 A schematic diagram of a cleaning chamber of a wafer cleaning device provided in an embodiment of the present disclosure;

[0035] Figure 7 An enlarged schematic diagram of a cleaning chamber of a wafer cleaning device provided in an embodiment of the present disclosure;

[0036] Figure 8 A schematic top view of a cleaning chamber of a wafer cleaning device according to an embodiment of the present disclosure;

[0037] Fig. 9 A schematic diagram of a wafer cleaning apparatus provided for moving a wafer into or out of an embodiment of the present disclosure;

[0038] Fig.10 A schematic diagram of a wafer being cleaned in a wafer cleaning device provided by an embodiment of the present disclosure;

[0039] Fig.11 A schematic diagram of a wafer being dried in a wafer cleaning device provided by an embodiment of the present disclosure;

[0040] Fig.12 A schematic flow chart of a method for controlling a drainage device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the technical solution of the present disclosure, the drainage device, wafer cleaning equipment and control method of the drainage device provided by the present disclosure are described in detail below with reference to the accompanying drawings.

[0042] In the description of the present disclosure, unless otherwise specified, expressions in the singular form may include plural concepts.

[0043] Furthermore, the terms “first”, “second”, etc. are merely used to distinguish the descriptions and should not be understood as indicating or implying relative importance or order.

[0044] In addition, it should be noted that, unless there is any conflict, the features in the embodiments of the present disclosure may be arbitrarily combined with each other.

[0045] The present disclosure provides a drainage device 30, which is applied to a wafer cleaning device 1. Figure 1 and Figure 2 The wafer cleaning device 1 mainly includes a cleaning chamber 10, a fluid supply device 20 and a discharge device 30, and is used for cleaning and drying the wafer W by wet method.

[0046] like Figure 1 As shown, the cleaning chamber 10 includes, for example, a chamber body 100 and a sealing cover 101 disposed on the top of the chamber body 100, which is used to seal the internal space of the cleaning chamber 10 to form a sealed space during cleaning. The sealing cover 101 is configured to be able to open and close to open or close the cleaning chamber 10. When the sealing cover 101 is opened, the wafer W can be moved into the cleaning chamber 10 from the top of the cleaning chamber 10 or moved out of the cleaning chamber 10. The cleaning chamber 10 includes, for example, a drain port 102 disposed at the bottom of the chamber body 10, and the drain port 102 can be connected to the drain device 30 to discharge the fluid in the cleaning chamber 10 to the drain device 30. The discharged fluid includes, for example, a cleaning solution for cleaning the wafer W, a gas (such as air, an inert gas), a replacement medium, etc. The wafer cleaning device 1 also includes a cleaning tank 11. The cleaning tank 11 is disposed in the cleaning chamber 10, and is used to contain the cleaning solution and the wafer W during the cleaning process. The size of the cleaning tank 11 allows the wafer W to be completely immersed in the cleaning solution. A cleaning tank drain valve 110 is disposed at the bottom of the cleaning tank 11, and is used to discharge the cleaning solution into the cleaning chamber 10. The cleaning tank is also provided with a cleaning tank inlet pipe section 111, which is used to communicate with the inlet port 105 of the cleaning chamber 10 to receive the cleaning solution from the fluid supply device 20.

[0047] like Figure 1 As shown, the fluid supply device 20 includes, for example, an inert gas supply pipeline 21, a replacement medium supply pipeline 23, and a cleaning solution supply pipeline 25. The inert gas supply pipeline 21 is connected to the internal space of the cleaning chamber 10 through an inert gas inlet 22 provided on the cleaning chamber 10 to provide the inert gas from the inert gas source into the cleaning chamber 10. The replacement medium supply pipeline 23 is connected to the internal space of the cleaning chamber 10 through a replacement medium inlet 24 provided on the cleaning chamber 10 to provide the replacement medium from the replacement medium source into the cleaning chamber 10. Through the Marangoni effect, the replacement medium can replace the water molecules on the surface of the wafer W after cleaning. The replacement medium is, for example, isopropyl alcohol vapor (IPA). The cleaning solution supply pipeline 25 is connected to the cleaning tank inlet pipe section 111 to provide the cleaning solution to the cleaning tank 11.

[0048] The drainage device 30 provided in the embodiment of the present disclosure is used for the above-mentioned wafer cleaning device 1. Figures 1 to 6 , the drainage device 30 includes a recovery container 300, a first fluid pipeline 310, a second fluid pipeline 320, a negative pressure device 301 and a switching component. One end of the first fluid pipeline 310 is used to communicate with the drainage port 102 of the cleaning chamber 10 of the wafer cleaning equipment 1, and the other end is used to communicate with the inlet 302 of the recovery container 300. One end of the second fluid pipeline 320 is used to communicate with the drainage port 102 of the cleaning chamber 10, and the other end is used to communicate with the fluid handling device (not shown). It should be noted that the fluid handling device can be other equipment of the wafer cleaning equipment 1, or other equipment outside the wafer cleaning equipment 1 (for example, factory service equipment). The switching component is used to selectively control the opening and closing of the first fluid pipeline 310 and the second fluid pipeline 320. The negative pressure device 301 is connected to the gas outlet 303 of the recovery container 300, and is used to extract the gas in the recovery container 300 in response to the switching component controlling the first fluid pipeline 310 to be disconnected. In the prior art, in order to recover the cleaning liquid overflowing from the cleaning tank during the cleaning process, the cleaning chamber and the recovery container need to be kept connected at all times. In this way, the step of vacuuming the cleaning chamber by the negative pressure device must be started after the cleaning liquid in the cleaning chamber is completely discharged, resulting in a long vacuuming period to form the expected negative pressure environment in the cleaning chamber, which leads to a long drying process time, thereby affecting the drying efficiency and drying effect of the wafer. In comparison, in this embodiment, while the cleaning liquid is introduced into the cleaning chamber 10, the drainage device 30 can control the second fluid pipeline 320 to be connected and the first fluid pipeline 310 to be disconnected through the switching component, so that the cleaning liquid overflowing from the cleaning tank 11 into the cleaning chamber 10 is discharged into the fluid processing device through the second fluid pipeline 320. While the cleaning chamber is connected to the second fluid pipeline, since the first fluid pipeline 310 remains disconnected, the cleaning chamber 10 and the recovery container 300 are not connected. The negative pressure device 301 responds to the switching component controlling the first fluid pipeline 310 to disconnect and can extract the gas in the recovery container 300, so that the recovery container 300 forms the expected negative pressure environment in advance. On this basis, when the switching component controls the second fluid pipeline 320 to disconnect and controls the first fluid pipeline 310 to connect, so that the cleaning chamber 10 and the recovery container 300 in a negative pressure state are connected, the cleaning liquid can be quickly discharged into the recovery container 300 in a negative pressure state. Thus, the pressure in the cleaning chamber 10 can be quickly reduced by pressure balance. In some embodiments, the volume of the recovery container 300 can be greater than the volume of the cleaning tank 11 to make the pressure balance more obvious. In other words, when the volume of the recovery container 300 is larger, the pressure in the cleaning chamber 10 can be more obviously reduced by pressure balance. In some embodiments, the negative pressure device 301 includes a vacuum pump.

[0049] In some embodiments, Figures 1 to 3 As shown, one end of the first fluid pipeline 310 can be connected to the first pipe segment L1 at the first node S1, and the first pipe segment L1 is connected to the discharge port 102. One end of the second fluid pipeline 320 can also be connected to the first pipe segment L1 at the first node S1.

[0050] In some embodiments, the switching component may include a controller (not shown). The switching component is used to selectively control the opening and closing of the first fluid pipeline 310 and the second fluid pipeline 320 under the control of the controller.

[0051] In some embodiments, Figures 1 to 3 As shown, the switching component may further include a first on-off valve 311 and a second on-off valve 321. The first on-off valve 311 may be provided in the first fluid pipeline 310. The second on-off valve 321 may be provided in the second fluid pipeline 320. The controller is used to open the second on-off valve 321 and close the first on-off valve 311 in response to the introduction of a cleaning solution into the cleaning tank 11 in the cleaning chamber 10. In other words, the controller is used to open the second on-off valve 321 and close the first on-off valve 311 while the cleaning solution is introduced into the cleaning tank 11 in the cleaning chamber 10. In some embodiments, the switching component may include a multi-way valve provided at the first node S1, and the controller may switch the passage direction in the multi-way valve to the first fluid pipeline 310 or the second fluid pipeline 320 as required.

[0052] In some embodiments, Figure 1 and Figure 4As shown, the discharge device 30 may further include a third fluid pipeline 330. One end of the third fluid pipeline 330 is used to communicate with the discharge port 102 of the cleaning chamber 10, and the other end is connected to the negative pressure device 301. The switching component can also be used to selectively control the on-off of the third fluid pipeline 330. In some embodiments, the switching component may include a third on-off valve 331. The third on-off valve 331 may be provided in the third fluid pipeline 330. One end of the third fluid pipeline 330 may be connected to the negative pressure device 301 at the second node S2. The above-mentioned controller is used to open the third on-off valve 331 in response to drying the wafer W in the cleaning chamber 10. In other words, the above-mentioned controller can be used to open the third on-off valve 331 and disconnect the first fluid pipeline 310 and the second fluid pipeline 320 when drying the wafer W in the cleaning chamber 10. Thus, when the wafer W is dried, the negative pressure device 301 can be directly switched to communicate with the cleaning chamber 10 to form a high negative pressure environment in the cleaning chamber 10, thereby shortening the drying time of the wafer W. The above-mentioned controller is also used to respond to the completion of drying the wafer W in the cleaning chamber 10, and close the third on-off valve 331. On this basis, when the cleaning liquid is introduced into the cleaning tank 11 in the cleaning chamber 10, the negative pressure device 301 can be separately connected with the recovery container 300 to form the expected negative pressure environment in the recovery container 300 in advance. When the cleaning liquid is discharged into the recovery container 300, the recovery container 300 that has formed the expected negative pressure environment can be connected to the cleaning chamber 10 to quickly form a negative pressure environment in the cleaning chamber 10, thereby quickly draining the liquid. When the wafer W is dried, the negative pressure device 301 can be directly connected with the cleaning chamber 10 to directly provide a negative pressure environment for the cleaning chamber 10. In other words, the negative pressure environment in the recovery container 300 and the cleaning chamber 10 in the above steps can be achieved by the same negative pressure device 301 (for example, a single vacuum pump), without the need to provide an additional negative pressure device, thereby simplifying the structure of the drainage device 30 and reducing manufacturing costs.

[0053] In some embodiments, Figure 1 and Figure 3As shown, the discharge device 30 may further include a fourth fluid pipeline 340. One end of the fourth fluid pipeline 340 is connected to the gas outlet 303 of the recovery container 300, and the other end is connected to the negative pressure device 301. The switching component is also used to selectively control the on-off of the fourth fluid pipeline 340. One end of the fourth fluid pipeline 340 may be connected to the negative pressure device 301 at the second node S2. In some embodiments, the switching component may include a fourth on-off valve 341. The fourth on-off valve 341 may be provided in the fourth fluid pipeline 340. Thus, the recovery container 300 may be disconnected from the negative pressure device 301 by closing the fourth on-off valve 341. In some embodiments, the controller may be used to open the fourth on-off valve 341 in response to the introduction of a cleaning solution into the cleaning tank 11 in the cleaning chamber 10, at which time the fourth fluid pipeline 340 is connected to the recovery container 300 and the negative pressure device 301, and the negative pressure device 301 may form an expected negative pressure environment in the recovery container 300 in advance. In some embodiments, the controller can be used to close the fourth on-off valve 341 in response to drying the wafer W in the cleaning chamber 10, at which time the fourth fluid pipeline 340 is disconnected, and the negative pressure device 301 can no longer operate to form a negative pressure environment for the recovery container 300. In an embodiment where the drainage device 30 includes a third fluid pipeline 330, when the switching component opens the third fluid pipeline 330 to connect the cleaning chamber 10 and the negative pressure device 301, the switching component switches from connecting the fourth fluid pipeline 340 to disconnecting the fourth fluid pipeline 340, so that the volume of the negative pressure space is reduced from the overall volume of the cleaning chamber 10 and the recovery container 300 to the volume of the cleaning chamber 10 alone, so that the cleaning chamber 10 is further formed into a high negative pressure environment without changing the operating parameters of the negative pressure device 301 (for example, without increasing the power of the vacuum pump), so that the replacement medium can evaporate quickly when the wafer W is dried.

[0054] In some embodiments, Figure 1 and Figure 5As shown, the discharge device 30 may further include a fifth fluid pipeline 350. One end of the fifth fluid pipeline 350 is used to communicate with the inlet 105 of the cleaning chamber 10, and the other end is connected to the negative pressure device 301. The switching component is also used to selectively control the on-off of the fifth fluid pipeline 350. One end of the fifth fluid pipeline 350 can be connected to the negative pressure device 301 at the second node S2. The other end of the fifth fluid pipeline 350 can be connected to the cleaning tank inlet pipe section 111 at the third node S3. In this case, the cleaning liquid supply pipeline 25 is also connected to the cleaning tank inlet pipe section 111 at the third node S3. In some embodiments, the switching component may include a fifth on-off valve 351. The fifth on-off valve 351 may be provided in the fifth fluid pipeline 350. In some embodiments, the above-mentioned controller may be used to close the fifth on-off valve 351 in response to the introduction of cleaning liquid into the cleaning tank 11 in the cleaning chamber 10. In some embodiments, the controller may be used to open the fifth on-off valve 351 in response to drying the wafer W in the cleaning chamber 10. In some embodiments, the controller may also be used to close the fifth on-off valve 351 in response to completion of drying the wafer W in the cleaning chamber 10. In this way, in some specific scenarios, for example, in the scenario where it is necessary to discharge fluid (e.g., cleaning solution or gas) directly from the cleaning tank 11 without passing through the cleaning chamber 10, the fluid may be discharged to the recovery container 300 by sequentially passing through the cleaning tank inlet pipe section 111 and the fifth fluid pipeline 350. For another example, in the case where the cleaning tank inlet pipe section 111 is configured to pass through the side wall of the cleaning chamber 10, in a specific scenario, the fluid in the cleaning chamber 10 may be discharged directly from the side of the cleaning chamber 10 through the cleaning tank inlet pipe section 111 without being discharged from the bottom of the cleaning chamber 10.

[0055] The drainage device 30 of the present disclosure embodiment will now be further described by way of a specific example. Figures 1 to 5 As shown, the drainage device 30 includes a first fluid line 310 , a second fluid line 320 , a third fluid line 330 , a fourth fluid line 340 and a fifth fluid line 350 .

[0056] like Figure 2 As shown, the on-off status of the above fluid pipelines can be set to be that the first fluid pipeline 310 is disconnected, the second fluid pipeline 320 is connected, the third fluid pipeline 330 is disconnected, the fourth fluid pipeline 340 is connected, and the fifth fluid pipeline 350 is disconnected. In this case, the cleaning chamber 10 is isolated from the recovery container 300, the fluid in the cleaning chamber 10 can flow to the fluid processing device through the second fluid pipeline 320, and the negative pressure device 301 is connected to the recovery container 300 through the fourth fluid pipeline 340, so that a negative pressure environment is formed in the recovery container 300.

[0057] like Figure 3As shown, the on-off status of the above fluid pipelines can be set to be that the first fluid pipeline 310 is connected, the second fluid pipeline 320 is disconnected, the third fluid pipeline 330 is disconnected, the fourth fluid pipeline 340 is connected, and the fifth fluid pipeline 350 is disconnected. In this case, the cleaning chamber 10 can be connected to the recovery container 300 through the first fluid pipeline 310, and the negative pressure device 301 is connected to the recovery container 300 through the fourth fluid pipeline 340. The negative pressure device 301 can form a negative pressure environment in the recovery container 300 and the cleaning chamber 10.

[0058] like Figure 4 As shown, the on-off conditions of the above-mentioned fluid pipelines can be set to be that the first fluid pipeline 310 is disconnected, the second fluid pipeline 320 is disconnected, the third fluid pipeline 330 is connected, the fourth fluid pipeline 340 is disconnected, and the fifth fluid pipeline 350 is disconnected. In this case, the negative pressure device 301 is connected to the cleaning chamber 10 through the third fluid pipeline 330, and the negative pressure device 301 can form a negative pressure environment in the cleaning chamber 10. It should be noted that in this case, the recovery container 300 can be connected to the exhaust pipeline 360 ​​and the drain pipeline 370 to naturally discharge the fluid therein and restore the pressure in the recovery container 300 to normal pressure. Since the time of this process is significantly lower than the drying time of the wafer W in the cleaning chamber 10, this process does not require the negative pressure device 301, and therefore will not affect the next process cycle, thereby reducing the number of negative pressure devices.

[0059] like Figure 5 As shown, the on-off status of the above fluid pipelines can be set to the first fluid pipeline 310 being disconnected, the second fluid pipeline 320 being disconnected, the third fluid pipeline 330 being disconnected, the fourth fluid pipeline 340 being disconnected, and the fifth fluid pipeline 350 being connected. Figure 4 The situation shown is similar, except that the negative pressure device 301 is connected to the cleaning chamber 10 through the fifth fluid pipeline 350. It should be noted that the third fluid pipeline 330 and the fifth fluid pipeline 350 can also be connected at the same time to increase the unit flow rate of fluid discharge, which is not limited here.

[0060] As another technical solution, Figure 1 and Figures 6 to 11As shown, the embodiment of the present disclosure also provides a wafer cleaning device 1, including a cleaning chamber 10, a cleaning tank 11, a carrying device 12 and the above-mentioned drainage device 30. The cleaning tank 11 is arranged in the cleaning chamber 10. The carrying device 12 is used to carry the wafer W. The wafer W carried by the carrying device 12 can enter the cleaning tank 11 through the opening of the cleaning tank 11. In this way, while the cleaning liquid is introduced into the cleaning chamber 10, the second fluid pipeline 320 can be controlled to be connected and the first fluid pipeline 310 can be controlled to be disconnected by the switching component, so that the cleaning liquid overflowing from the cleaning tank 11 to the cleaning chamber 10 is discharged into the fluid processing device. While the cleaning chamber is connected to the second fluid pipeline, since the first fluid pipeline 310 remains disconnected, the cleaning chamber 10 and the recovery container 300 are not connected. The negative pressure device 301 can extract the gas in the recovery container 300 in response to the switching component controlling the first fluid pipeline 310 to be disconnected, so that the recovery container 300 forms the expected negative pressure environment in advance. On this basis, when the switching component controls the second fluid pipeline 320 to be disconnected and controls the first fluid pipeline 310 to be connected, so that the cleaning chamber 10 is connected to the recovery container 300 in a negative pressure state, the cleaning liquid can be quickly discharged into the recovery container 300 in a negative pressure state. In some embodiments, the carrier 12 can have a lifting function to drive the wafer W to rise and fall.

[0061] In some embodiments, Figures 6 to 11 As shown, the wafer cleaning equipment 1 may further include a shielding assembly 13. The shielding assembly 13 is disposed between the circumferential inner wall 104 of the cleaning chamber 10 and the circumferential outer wall 112 of the cleaning tank 11, and is used to prevent the atomized material or sputtered particles of the cleaning solution below the shielding assembly 13 from reaching above the shielding assembly 13. The shielding assembly 13 has a fluid channel 130 for the gas above the shielding assembly 13 to flow downward. In this way, the shielding assembly 13 separates the cleaning chamber 10 into an upper chamber and a lower chamber, and the wafer W is located in the upper chamber during the drying process. The cleaning solution in the cleaning tank 11 may overflow, and may be atomized or sputtered when discharged into the cleaning chamber 10. In this case, the shielding assembly 13 can prevent the atomized material or sputtered particles of the cleaning solution generated in the lower portion of the cleaning chamber 10 from reaching above the shielding assembly 13, that is, from reaching the upper chamber to contaminate the wafer W. In addition, when the inert gas supply pipeline 21 and / or the replacement medium supply pipeline 23 provide gas or other media to the cleaning chamber 10, the shielding assembly 13 makes the pressure in the upper part of the chamber higher than the pressure in the lower part of the chamber, thereby guiding the gas and the cleaning liquid overflowing from the cleaning tank 11 to move toward the lower part of the chamber. In this case, the cleaning chamber 10 may include an outlet pipeline 103 disposed in the lower area of ​​the chamber, and an outlet pipeline valve may be disposed in the outlet pipeline 103 to enable the gas to be discharged from the cleaning chamber 10.

[0062] In some embodiments, Figures 6 to 8 As shown, the shielding assembly 13 may include a first shielding member 131 and a second shielding member 132. The first shielding member 131 is disposed on the circumferential outer wall 112 of the cleaning tank 11 (i.e., the side wall of the cleaning tank 11), and extends along the circumference of the cleaning tank 11 (i.e., along the Figure 6 The second shielding member 132 is disposed on the circumferential inner wall 104 of the cleaning chamber 10 (i.e., the side wall of the cleaning chamber 10), and extends along the circumference of the cleaning chamber 10 (i.e., along the Figure 6 Laterally inward). Figure 8 As shown in FIG. 1 , the orthographic projection of the first shielding member 131 on the radial cross section of the cleaning chamber 10 at least partially overlaps with the orthographic projection of the second shielding member 132 on the radial cross section of the cleaning chamber 10. In other words, on the radial cross section, the orthographic projection of the outer edge 1310 of the first shielding member 131 is larger than the outer edge 1320 of the second shielding member 132 ( Figure 8 The orthographic projection of the inner wall of the cleaning chamber 10 is closer to the orthographic projection of the inner wall of the cleaning chamber 10. The first shielding member 131 and the second shielding member 132 are arranged in a vertical direction to form a fluid channel 130, and the fluid channel 130 includes a channel extending transversely along the circumference of the cleaning chamber 10 or the cleaning tank 11 for gas to pass through. Such a fluid channel 130 can increase the passing speed of the airflow and guide the originally disordered and chaotic airflow.

[0063] In some embodiments, Figure 7 and Figure 8 As shown, in the fluid channel 130, along the circumference of the cleaning chamber 10 or the cleaning tank 11, the channel length is a, a ≥ 10mm; along the axial direction of the cleaning chamber 10 or the cleaning tank 11, the channel height is b, 5mm ≤ b ≤ 30mm. According to experiments, the fluid channel 130 of this size range can effectively increase the speed of the airflow, and can obtain the expected airflow direction when the airflow reaches the lower part of the cavity.

[0064] In some embodiments, in the vertical direction, the first shielding member 131 is located above the second shielding member 132. This arrangement ensures that even if the atomized cleaning liquid generated below the shielding assembly 13 flows to the top of the shielding assembly 13 via the fluid channel 130, the atomized liquid will flow toward the inner wall of the cleaning chamber 10 under the guidance of the fluid channel 130 to stay away from the cleaning tank 11. In addition, the first shielding member 131 is disposed close to the opening of the cleaning tank 11, and its upper surface is inclined downward in a direction away from the circumferential outer wall of the cleaning tank 11 (i.e., the upper surface of the first shielding member 131 is inclined outward and downward), which is conducive to the cleaning liquid overflowing from the opening of the cleaning tank 11 to quickly flow to the lower part of the cleaning chamber 10 via the fluid channel 130 under the guidance of the inclined upper surface.

[0065] As another technical solution, Figures 9 to 12 As shown, the embodiment of the present disclosure also provides a control method of the drainage device 30, which is applied to the above-mentioned wafer cleaning device 1. The control method includes:

[0066] Step St1, introducing a cleaning solution into the cleaning tank 11 in the cleaning chamber 10; and

[0067] Step St2, in response to the introduction of cleaning liquid into the cleaning tank 11 in the cleaning chamber 10, the second fluid pipeline 320 is controlled to be connected through the switching component, and the first fluid pipeline 310 is controlled to be disconnected, so as to discharge the cleaning liquid overflowing into the cleaning chamber 10 into the fluid processing device; and the gas in the recovery container 300 is extracted through the negative pressure device 301 to form a negative pressure environment inside the recovery container 300.

[0068] In other words, in response to the introduction of cleaning liquid into the cleaning tank 11 in the cleaning chamber 10, the process of connecting the second fluid pipeline 320 and disconnecting the first fluid pipeline 310 through the switching component, and the process of extracting the gas in the recovery container 300 through the negative pressure device 301 can be carried out simultaneously. In this process, since the first fluid pipeline 310 remains disconnected, the cleaning chamber 10 and the recovery container 300 are not connected, and the negative pressure device 301 can extract the gas in the recovery container 300, so that the recovery container 300 forms the expected negative pressure environment in advance. On this basis, when the switching component controls the second fluid pipeline 320 to disconnect and controls the first fluid pipeline 310 to connect, so that the cleaning chamber 10 and the recovery container 300 in the negative pressure state are connected, the cleaning liquid can be quickly discharged into the recovery container 300 in the negative pressure state. In some embodiments, the control method may include connecting the fourth fluid pipeline 340 through the switching component to connect the negative pressure device 301 to the recovery container 300.

[0069] In some embodiments, the control method may further include: in response to the cleaning liquid in the cleaning tank 11 being discharged into the cleaning chamber 10, controlling the first fluid pipeline 310 to be connected and controlling the second fluid pipeline 320 to be disconnected by the switching component, so as to discharge the cleaning liquid in the cleaning chamber 10 into the recovery container 300 in a negative pressure state. In this way, after the recovery container 300 is connected with the cleaning chamber 10, the fluid in the cleaning chamber 10 reaches the recovery container 300 through the first fluid pipeline 310, and because the recovery container 300 has formed the expected negative pressure environment in advance, when the recovery container 300 is connected with the cleaning chamber 10, the internal pressure of the cleaning chamber 10 can be quickly reduced, which is conducive to the flow of the fluid in the cleaning chamber 10.

[0070] In some embodiments, the control method may further include: in response to drying the wafer W in the cleaning chamber 10, controlling the third fluid pipeline 330 to be connected through the switching component, and extracting the gas in the cleaning chamber 10 through the negative pressure device 301. In some embodiments, the fourth fluid pipeline 340 and the first fluid pipeline 310 may be disconnected, so that the recovery container 300 is isolated from the cleaning chamber 10, so that the gas in the cleaning chamber 10 is extracted separately through the negative pressure device 301, the volume of the negative pressure environment is reduced, and the pressure of the cleaning chamber 10 is reduced more quickly.

[0071] In some embodiments, the control method may also include: in response to drying the wafer W in the cleaning chamber 10, controlling the fifth fluid line 350 and the fourth fluid line 340 to be connected through a switching component, so as to discharge the residual fluid in the cleaning tank 11 through the inlet 105 of the cleaning chamber 10 (further, from the cleaning tank inlet pipe section 111) under specific circumstances.

[0072] The control method of the drainage device 30 in the embodiment of the present disclosure will now be further explained by taking the operation process of the wafer cleaning device 1 as an example. It should be noted that, unless otherwise mentioned, the valves and other structures that can be switched are in a closed / disconnected state before the start of the process and during the process. The operation process of the wafer cleaning device 1 includes the following steps:

[0073] Step 1: Fig. 9 As shown, the sealing cover 101 is opened and the wafer W is loaded onto the carrier 12 .

[0074] Step 2: If Fig.10 As shown, the carrier device 12 is operated to lower the wafer W into the cleaning tank 11 , and the sealing cover 101 is closed.

[0075] Step 3: Connect the cleaning solution supply pipeline 25, and supply cleaning solution such as water or chemical solution to the cleaning tank 11 through the external solution system to clean the wafer W. At this time, the cleaning solution in the cleaning tank 11 immerses the wafer W and may overflow. Connect the second fluid pipeline 320 to discharge the overflowing cleaning solution to the fluid processing device.

[0076] Step 4: Keep the cleaning liquid supply pipeline 25 connected, keep the second fluid pipeline 320 connected, and connect the inert gas supply pipeline 21, so that the inert gas enters the cleaning chamber 10 through the inert gas inlet 22, and connect the gas outlet pipeline 103 of the cleaning chamber 10 to reduce the oxygen concentration in the cleaning chamber 10. At this time, the shielding component 13 can prevent the atomized cleaning liquid from diffusing upward, and the "U"-shaped fluid channel 130 formed by the shielding component 13 can quickly guide the airflow to the bottom of the cleaning chamber 10. At this time, Figure 2As shown, the fourth fluid pipeline 340 is connected, and the negative pressure device 301 extracts the gas in the recovery container 300 to form a negative pressure environment.

[0077] Step 5: Keep the inert gas supply line 21 connected, keep the cleaning liquid supply line 25 connected, keep the gas outlet line 103 connected, keep the second fluid line 320 connected, keep the fourth fluid line 340 connected, and Figure 1 As shown, the replacement medium supply pipeline 23 is connected, the carrier device 12 lifts the cleaned wafer W, and the cleaning liquid on the surface of the wafer W is replaced with the replacement medium through the Marangoni effect. At this time, the shielding component 13 can prevent the cleaning liquid from splashing onto the wafer W, so as to improve the surface cleanliness of the wafer W.

[0078] Step 6: Keep the air outlet pipeline 103 connected, keep the fourth fluid pipeline 340 connected, and Figure 3 As shown, the inert gas supply pipeline 21, the replacement medium supply pipeline 23 and the cleaning liquid supply pipeline 25 are disconnected to stop supplying fluid to the cleaning chamber 10, the second fluid pipeline 320 is disconnected and the first fluid pipeline 310 is connected, the cleaning liquid in the cleaning tank 11 will flow to the cleaning chamber 10 through the cleaning tank discharge valve 110, and quickly discharged to the recovery container 300 through the discharge port 102 of the cleaning chamber 10. At this time, the cleaning chamber 10 is originally slightly positive pressure, and under the negative pressure of the recovery container 300 that is previously in a negative pressure state and the suction of the negative pressure device 301, the cleaning liquid and gas have the power to flow to the recovery container 300. At this time, due to the rapid discharge of the cleaning solution, a large amount of splashing cleaning solution will be generated in the lower part of the cleaning chamber 10. In this regard, the shielding component 13 makes the pressure in the upper part of the cleaning chamber 10 greater than the pressure in the lower part of the chamber. At the same time, combined with the structure of the shielding component 13, the atomized material or sputtered particles of the cleaning solution are effectively blocked from reaching the wafer W in the upper part of the chamber. After a certain period of time, the pressure between the cleaning chamber 10 and the recovery container 300 can quickly reach equilibrium. Therefore, when discharging the cleaning solution, there is no need to spend extra time to extract gas to form a negative pressure environment, which effectively saves the lead time of the drying process.

[0079] Step 7: Keep the outlet pipe 103 connected, and Figure 4As shown, after the cleaning liquid is discharged, the first fluid pipeline 310 and the fourth fluid pipeline 340 are disconnected, and the third fluid pipeline 330 is connected, so that the recovery container 300 is isolated from both the cleaning chamber 10 and the negative pressure device 301, and the cleaning chamber 10 and the negative pressure device 301 are directly connected. Since the negative pressure device 301 does not need to extract the gas in the recovery container 300 and directly extracts the gas in the cleaning chamber 10, the total volume required to form a negative pressure environment becomes smaller, thereby further reducing the pressure in the cleaning chamber 10, so that the replacement medium on the surface of the wafer W can evaporate quickly. At this time, the exhaust pipeline 360 ​​and the drainage pipeline 370 of the recovery container 300 are connected, so that the gas and liquid in the recovery container 300 can be naturally discharged separately, for example, discharged to the fluid processing device.

[0080] Step 8: Keep the gas outlet pipeline 103 connected, and after the drying process is completed, disconnect the third fluid pipeline 330, connect the inert gas supply pipeline 21 to restore the cleaning chamber 10 to normal pressure, and disconnect the inert gas supply pipeline 21 and the gas outlet pipeline 103. Fig. 9 As shown, the sealing cover 101 is opened to unload the cleaned wafer W. Meanwhile, after the recovery container 300 returns to normal pressure, the exhaust pipeline 360 ​​and the drain pipeline 370 are disconnected.

[0081] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and substance of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A drainage device, applied to a wafer cleaning device, characterized in that: include: Recycling containers; a first fluid pipeline, one end of which is used to communicate with the discharge port of the cleaning chamber of the wafer cleaning equipment, and the other end of which is communicated with the inlet port of the recovery container; a second fluid pipeline, one end of which is used to communicate with the discharge port of the cleaning chamber, and the other end of which is used to communicate with the fluid processing device; A switching component, used for selectively controlling the on-off of the first fluid pipeline and the second fluid pipeline; as well as The negative pressure device is communicated with the gas outlet of the recovery container and is used for extracting the gas in the recovery container in response to the switching component controlling the first fluid pipeline to be disconnected.

2. The drainage device according to claim 1, characterized in that: The switching component includes a controller, and the switching component is used to selectively control the on and off of the first fluid pipeline and the second fluid pipeline under the control of the controller.

3. The drainage device according to claim 2, characterized in that: Also includes: a third fluid pipeline, one end of which is used to communicate with the discharge port of the cleaning chamber, and the other end of which is communicated with the negative pressure device; Wherein, the switching component is also used to selectively control the on-off of the third fluid pipeline under the control of the controller.

4. The drainage device according to claim 2, characterized in that: Also includes: a fourth fluid pipeline, one end of which is connected to the air outlet of the recovery container, and the other end of which is connected to the negative pressure device; Wherein, the switching component is also used to selectively control the on-off of the fourth fluid pipeline under the control of the controller.

5. The drainage device according to claim 2, characterized in that: Also includes: a fifth fluid pipeline, one end of which is used to communicate with the inlet of the cleaning chamber, and the other end of which is connected to the negative pressure device; Wherein, the switching component is also used to selectively control the on-off of the fifth fluid pipeline under the control of the controller.

6. The drainage device according to any one of claims 2, characterized in that: The switching assembly includes a first on-off valve and a second on-off valve, wherein the first on-off valve is arranged on the first fluid pipeline; the second on-off valve is arranged on the second fluid pipeline; The controller is used for opening the second on-off valve and closing the first on-off valve in response to the introduction of cleaning liquid into the cleaning tank in the cleaning chamber.

7. The drainage device according to claim 3, characterized in that: The switching assembly further includes a third on-off valve, wherein the third on-off valve is disposed in the third fluid pipeline; The controller is used to open the third on-off valve in response to drying the wafers in the cleaning chamber, and is used to close the third on-off valve in response to completion of drying the wafers in the cleaning chamber.

8. The drainage device according to claim 4, characterized in that: The switching assembly further includes a fourth on-off valve, wherein the fourth on-off valve is disposed in the fourth fluid pipeline; The controller is used to open the fourth on-off valve in response to the introduction of cleaning solution into the cleaning tank in the cleaning chamber, and / or to close the fourth on-off valve in response to drying the wafer in the cleaning chamber.

9. The drainage device according to claim 5, characterized in that: The switching assembly further includes a fifth on-off valve, wherein the fifth on-off valve is disposed in the fifth fluid pipeline; The controller is used to open the fifth on-off valve in response to the introduction of a cleaning solution into the cleaning tank in the cleaning chamber, and / or is used to open the fifth on-off valve in response to drying the wafer in the cleaning chamber; and The controller is further configured to close the fifth on-off valve in response to completion of drying the wafers in the cleaning chamber.

10. A wafer cleaning device, characterized in that: It comprises a cleaning chamber, a cleaning tank, a carrying device and a drainage device as described in any one of claims 1 to 9, wherein the cleaning tank is arranged in the cleaning chamber, and the carrying device is used for carrying wafers.

11. The wafer cleaning equipment according to claim 10, characterized in that: Also includes: A shielding assembly is arranged between the circumferential inner wall of the cleaning chamber and the circumferential outer wall of the cleaning tank, and is used to prevent the atomized matter or sputtered particles of the cleaning solution below the shielding assembly from reaching above the shielding assembly. The shielding assembly has a fluid channel for the gas above the shielding assembly to pass through.

12. The wafer cleaning equipment according to claim 11, characterized in that: The shielding assembly comprises: a first shielding member, disposed on a circumferential outer wall of the cleaning tank and extending along the circumference of the cleaning tank; and A second shielding member is disposed on the circumferential inner wall of the cleaning chamber and extends along the circumference of the cleaning chamber; The orthographic projection of the first shielding member on the radial cross section of the cleaning chamber at least partially overlaps with the orthographic projection of the second shielding member on the radial cross section of the cleaning chamber, and the first shielding member and the second shielding member are spaced apart in the vertical direction to form the fluid channel.

13. The wafer cleaning equipment according to claim 12, characterized in that: In the vertical direction, the first shielding member is located above the second shielding member and close to the opening of the cleaning tank, and the upper surface of the first shielding member is inclined downward in a direction away from the circumferential outer wall of the cleaning tank.

14. A method for controlling a drainage device, characterized in that: Applied to the drainage device according to any one of claims 1 to 9, the control method comprises: Passing a cleaning solution into the cleaning tank in the cleaning chamber; and In response to the introduction of cleaning liquid into the cleaning tank in the cleaning chamber, the second fluid pipeline is controlled to be connected and the first fluid pipeline is controlled to be disconnected through the switching component, so as to discharge the cleaning liquid overflowing into the cleaning chamber into the fluid processing device, and the gas in the recovery container is extracted through the negative pressure device to form a negative pressure environment inside the recovery container.

15. The control method according to claim 14, characterized in that: Also includes: In response to the cleaning liquid in the cleaning tank being discharged into the cleaning chamber, the first fluid pipeline is controlled to be connected and the second fluid pipeline is controlled to be disconnected through the switching component to discharge the cleaning liquid in the cleaning chamber into the recovery container in a negative pressure state.

16. The control method according to claim 14, characterized in that: The discharge device further comprises a third fluid pipeline, one end of which is used to communicate with the discharge port of the cleaning chamber, and the other end of which is used to communicate with the negative pressure device; The control method further comprises: In response to drying the wafer in the cleaning chamber, the third fluid pipeline is controlled to be connected through the switching component, and the gas in the cleaning chamber is extracted through the negative pressure device.

17. The control method according to claim 16, characterized in that: The drainage device also includes a fourth fluid pipeline and a fifth fluid pipeline; One end of the fourth fluid pipeline is connected to the air outlet of the recovery container, and the other end is connected to the negative pressure device; One end of the fifth fluid pipeline is used to communicate with the inlet of the cleaning chamber, and the other end is communicated with the negative pressure device; The control method further comprises: In response to drying the wafer in the cleaning chamber, the fourth fluid line and the fifth fluid line are controlled to be connected through the switching component.

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