Machine carrier flatness measurement method and device, storage medium and terminal

Abstract

The invention discloses a machine carrier flatness measurement method and device, a storage medium and a terminal.The method comprises the steps that a focusing data set obtained through measurement when a standard wafer is flatly placed on a to-be-measured machine carrier is obtained, and the focusing data set comprises a plurality of focusing data sets; each focusing data set comprises calibration focusing data of two calibration points in one calibration point pair, a plurality of calibration point pairs with different position information are arranged at the edge of the standard wafer, and the two calibration points in each calibration point pair are located at the two ends of the diameter of the standard wafer; and acquiring corresponding height difference data based on each focusing data group in the focusing data set, and acquiring gradient data of the to-be-tested machine carrier based on the height difference data corresponding to all the focusing data groups. Therefore, the accurate and rapid flatness measurement process of the wafer carrier is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method and device for measuring flatness of a platform carrier, a storage medium and a terminal. Background Art

[0002] CDSEM (Critical Dimension Scanning Electron Microscope) is a key tool in semiconductor manufacturing. It is indispensable to ensure the performance of integrated circuits, improve production efficiency, maintain product quality and promote technological progress by measuring critical dimensions with high precision, optimizing production processes, detecting microscopic defects and supporting R&D innovation. CDSEM scans the sample surface by emitting and focusing a high-speed electron beam, collects the generated secondary electron signals to construct high-resolution images, and analyzes these images with the help of advanced software to achieve high-precision measurement of the critical dimensions of the microstructure of semiconductor devices. However, during the measurement process, the tilt of the wafer to be measured may have a significant impact on the measurement results; such as image distortion, reduced resolution, measurement position offset, uneven dose distribution, poor repeatability and reproducibility, etc. It seriously affects the accuracy and reliability of critical dimension measurement, so controlling wafer placement to reduce tilt is a key measure to ensure measurement quality.

[0003] At present, the surface flatness of the machine carrier is an important factor affecting the tilt of the wafer. However, it is difficult to detect the tilt problem of the machine carrier through the control of the flatness. It is often discovered after the wafer is measured online and the impact is caused. Therefore, there is a problem of delayed discovery. In addition, the current online CDSEM machine mainly measures whether the wafer is tilted by using a laser to measure the height of the wafer before measurement. This method cannot measure the wafer tilt problem caused by the unevenness of the machine carrier. Therefore, it is urgent to quickly and accurately measure the flatness of the machine carrier. Summary of the invention

[0004] In view of the shortcomings of the prior art mentioned above, the purpose of the present application is to provide a machine carrier flatness measurement method and device, storage medium and terminal, which are used to solve the problem of lack of accurate and fast flatness measurement process for wafer carriers in the current process of measuring wafers to obtain high-definition images of wafers.

[0005] In a first aspect, the present application provides a method for measuring the flatness of a platform carrier, comprising:

[0006] Acquire a focus data set measured when a standard wafer is placed flat on a carrier of a machine to be tested, the focus data set comprising a plurality of focus data groups, each of which comprises calibration focus data of two calibration points in a calibration point pair, a plurality of calibration point pairs with different position information are arranged on the edge of the standard wafer, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer;

[0007] Acquire corresponding height difference data based on each of the focus data groups in the focus data set, and acquire inclination data of the test platform carrier based on the height difference data corresponding to all of the focus data groups;

[0008] The arch variable of the standard wafer is zero, and all the calibration focus data are obtained by measuring with a preset electron microscope.

[0009] In one embodiment of the present application, the preset electron microscope is a critical dimension scanning electron microscope, and the calibrated focus data in the focus data set is voltage data.

[0010] In one embodiment of the present application, acquiring corresponding height difference data based on the focus data group includes:

[0011] Subtracting two calibrated focus data in the focus data group to obtain voltage difference data;

[0012] The voltage difference data is multiplied by the voltage height variation coefficient of the critical dimension scanning electron microscope to obtain the height difference data corresponding to the focus data set.

[0013] In one embodiment of the present application, the process of obtaining the voltage height variation coefficient of the critical dimension scanning electron microscope includes:

[0014] The focus data of a standard wafer at different preset heights is measured by the critical dimension scanning electron microscope, and the difference between two adjacent preset heights and their corresponding focus data is respectively made to obtain multiple sets of height-focus comparison data. Based on the multiple sets of height-focus comparison data, the voltage height variation coefficient of the critical dimension scanning electron microscope is obtained.

[0015] In one embodiment of the present application, the calibration point pair on the standard wafer is set as follows: a preset fixed point on the edge of the standard wafer is used as the zero angle starting point, a plurality of calibration points with angle position information are sequentially set along the edge of the standard wafer according to the serial number, and two calibration points located on the same diameter of the standard wafer are set as a calibration point pair;

[0016] When obtaining the voltage difference data corresponding to the focusing data group, the calibrated focusing data of the calibration point with a relatively small serial number in the corresponding calibration point pair is subtracted from the calibrated focusing data of the calibration point with a relatively large serial number. At this time, the height difference data obtained is a positive or negative number.

[0017] In one embodiment of the present application, obtaining the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups includes:

[0018] Based on the height difference data corresponding to all the focus data groups and the position information of the calibration point pairs, a calibration point position-height difference fitting curve is obtained, and the maximum height difference data in the calibration point position-height difference fitting curve is obtained as the target height difference data, and the inclination data of the machine carrier to be tested is obtained based on the target height difference data.

[0019] In one embodiment of the present application, the flatness measurement method of a platform carrier further includes:

[0020] The position information corresponding to the target height difference data in the calibration point position-height difference fitting curve is obtained as the target position information, and the tilt direction and position information of the test platform carrier are determined based on the positive and negative attributes of the target height difference data and the target position information.

[0021] In one embodiment of the present application, the calculation formula for the inclination data of the test machine carrier is:

[0022]

[0023] Wherein, θ is the inclination data of the platform carrier to be tested, Δh is the target height difference data, and X is the diameter of the standard wafer.

[0024] In a second aspect, the present application provides a platform carrier flatness measurement device, including a focus data set acquisition module and a tilt data acquisition module;

[0025] The focusing data set acquisition module is used to acquire a focusing data set measured when a standard wafer is placed flat on a carrier of a machine to be tested, wherein the focusing data set includes a plurality of focusing data groups, each of which includes calibration focusing data of two calibration points in a calibration point pair, and a plurality of calibration point pairs with different position information are arranged on the edge of the standard wafer, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer;

[0026] The inclination data acquisition module is used to acquire corresponding height difference data based on each of the focus data groups in the focus data set, and acquire the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups;

[0027] The arch variable of the standard wafer is zero, and all the calibration focus data are obtained by measuring with a preset electron microscope.

[0028] In a third aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the machine platform carrier flatness measurement method is implemented.

[0029] In a fourth aspect, the present application provides a terminal, including a memory, a processor, and a computer program stored in the memory, wherein the processor executes the computer program to implement the platform carrier flatness measurement method.

[0030] Compared with the prior art, one or more embodiments of the above scheme may have the following advantages or beneficial effects:

[0031] The machine carrier flatness measurement method provided by the embodiment of the present invention adopts a standard wafer as an auxiliary measurement wafer to avoid the height difference or warping of the wafer itself affecting the measurement result; a plurality of focus data groups are obtained by focusing and measuring multiple pairs of calibration points marked on the edge of the standard wafer at both ends of the diameter, and then the focus data groups are converted into height difference data, and finally the multiple groups of height difference data are fitted to obtain a calibration point position-height difference fitting curve, and the inclination of the machine carrier to be measured is obtained based on the maximum height difference data in the calibration point position-height difference fitting curve; by converting the acquisition of the inclination of the standard wafer into the acquisition of the inclination of the machine carrier to be measured, an accurate and fast flatness measurement process for the wafer carrier is achieved.

[0032] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0034] Figure 1 Shown is a flow chart of a flatness measurement method for a machine platform carrier described in an embodiment of the present application.

[0035] Figure 2 Shown is a structural schematic diagram of the tilting of a machine carrier in the machine carrier flatness measurement method described in an embodiment of the present application.

[0036] Figure 3 Shown is a schematic structural diagram of a standard wafer in the machine carrier flatness measurement method described in an embodiment of the present application.

[0037] Figure 4 A schematic diagram showing height difference data in a flatness measurement method for a machine platform described in an embodiment of the present application is shown.

[0038] Figure 5 Shown is a schematic structural diagram of a machine carrier flatness measurement device according to an embodiment of the present application.

[0039] Figure 6 Shown is a schematic diagram of the structure of the terminal described in an embodiment of the present application. DETAILED DESCRIPTION

[0040] The following will describe the implementation methods of the present invention in detail with reference to the accompanying drawings and embodiments, so that the implementation process of how the present invention applies technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly. It should be noted that as long as there is no conflict, the various embodiments of the present invention and the various features in the embodiments can be combined with each other, and the technical solutions formed are all within the protection scope of the present invention.

[0041] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application, and thus the drawings only show components related to the present application rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0042] The following embodiments of the present application provide a machine carrier flatness measurement method and device, a storage medium and a terminal, which solve the problem of the lack of an accurate and fast flatness measurement process for the wafer carrier in the current process of measuring the wafer to obtain a high-definition image of the wafer.

[0043] The following will describe in detail the principles and implementation methods of a machine carrier flatness measurement method and device, storage medium and terminal of this embodiment in conjunction with the accompanying drawings, so that those skilled in the art can understand the machine carrier flatness measurement method and device, storage medium and terminal of this embodiment without creative work.

[0044] The machine carrier flatness measurement method of the present application can be applied to the process of obtaining high-resolution images of wafers based on CDSEM (critical dimension scanning electron microscope) in the semiconductor industry. The machine carrier flatness measurement method of the present application can also be applied to other scenarios in the semiconductor industry that require measuring the inclination of the machine carrier. The present application does not impose too many restrictions on it.

[0045] like Figure 1 As shown, this embodiment provides a method for measuring the flatness of a platform carrier, including the following steps.

[0046] Step S101 , obtaining a focus data set measured when a standard wafer is placed flat on a carrier of a testing machine.

[0047] The focus data set includes multiple focus data groups, each of which includes the calibration focus data of two calibration points in a calibration point pair. The edge of the standard wafer is provided with multiple calibration point pairs with different position information, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer. The standard wafer is limited to a wafer with zero arch variable, and it is necessary to ensure that all calibration focus data are obtained by measuring with a preset electron microscope in the same measurement state, so as to avoid errors between data caused by multi-device measurement, thereby affecting the acquisition result of the inclination of the test platform carrier.

[0048] Step S102 , acquiring corresponding height difference data based on each focus data group in the focus data set, and acquiring the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups.

[0049] The machine carrier flatness measurement method provided by the embodiment of the present invention obtains multiple focus data groups by focusing measurement on multiple calibration points at both ends of the diameter of the edge mark of the standard wafer, and then converts the focus data groups into height difference data. Finally, the inclination of the machine carrier to be tested is obtained based on the multiple sets of height difference data; by converting the acquisition of the inclination of the standard wafer into the acquisition of the inclination of the machine carrier to be tested, an accurate and fast flatness measurement process for the wafer carrier is achieved.

[0050] The following is a detailed description of steps S101 to S102 of the flatness measurement method for a platform carrier of this embodiment.

[0051] Step S101 , obtaining a focus data set measured when a standard wafer is placed flat on a carrier of a testing machine.

[0052] Select a wafer with zero or close-to-zero arch variable and extremely high surface flatness as the standard wafer to avoid the measurement results being affected by factors such as insufficient surface flatness or warping of the wafer to be measured. Figure 3As shown, a sufficient number of calibration point pairs with different position information are set on the edge of the standard wafer, and the two calibration points in each calibration point pair are located at the two ends of a diameter on the standard wafer. The specific setting method of the calibration point pair on the standard wafer is: a preset fixed point is set on the standard wafer as the zero angle starting point, and then multiple calibration points with angle position information are set in sequence along the edge of the standard wafer, and the two calibration points located on the same diameter of the standard wafer are set as a calibration point pair. For example, assuming that a fixed point pre-set on the standard wafer is used as the zero-angle starting point, the set calibration points include X1, X2...X18 in sequence, and each calibration point has its corresponding angular position information relative to the zero-angle starting point. The obtained calibration point pairs may be (X1, X10), (X2, X11), (X3, X12), (X4, X13), (X5, X14), (X6, X15), (X7, X16), (X8, X17), (X9, X18) in sequence. At this time, the angular position information of the calibration point with a forward sequence number in each pair of calibration point pairs may be selected as the position information of the corresponding calibration point pair, or the angular position information of the calibration point with a backward sequence number in each pair of calibration point pairs may be selected as the position information of the corresponding calibration point pair.

[0053] Preferably, the calibration points on the standard wafer can be evenly arranged along the edge of the standard wafer. In order to avoid the situation where the position-height difference fitting curve obtained is not accurate enough due to too few calibration point pairs, the present embodiment also limits the number of calibration point pairs arranged on the edge of the standard wafer to no less than 9 pairs, for example, a calibration point is set at every 20 degree central angle of the edge of the standard wafer.

[0054] Place the standard wafer flat and seamlessly on the test machine carrier, and then use a preset electron microscope to perform focus measurement on each calibration point of all calibration point pairs on the standard wafer to obtain the calibration focus data corresponding to each calibration point in each calibration point pair. The calibration focus data of the two calibration points in each calibration point pair constitute the focus data group of the corresponding calibration point pair. The specific process of focusing measurement of the calibration points is: focus the calibration points on the standard wafer through a preset electron microscope to obtain the corresponding data values ​​as the calibration focus data. A set of focus data groups can be obtained for each calibration point pair on the standard wafer, and the focus data groups corresponding to all calibration point pairs are collected to obtain a focus data set.

[0055] In one embodiment of the present invention, the preset electron microscope can be set as a critical dimension scanning electron microscope, and the calibration focus data obtained at this time is voltage data.

[0056] Step S102 , acquiring corresponding height difference data based on each focus data group in the focus data set, and acquiring the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups.

[0057] Under the condition that the electron microscope is preset as a critical dimension scanning electron microscope, corresponding height difference data is obtained based on each focus data group in the focus data set. The specific process of obtaining the corresponding height difference data based on the focus data group includes: subtracting two calibrated focus data in the focus data group to obtain voltage difference data; and then multiplying the obtained voltage difference data by the voltage height variation coefficient of the critical dimension scanning electron microscope, thereby obtaining the height difference data corresponding to the focus data group. Figure 4 It is a schematic diagram of height difference data in the flatness measurement method of a machine platform carrier described in an embodiment of the present application.

[0058] The voltage height variation coefficient of the critical dimension scanning electron microscope is obtained in advance, and the specific voltage height variation coefficient acquisition process of the critical dimension scanning electron microscope can be set as: select a wafer with an arch variable of zero or an arch variable infinitely close to zero as a standard wafer, and place the standard wafer seamlessly on the standard machine carrier (set the standard machine carrier inclination angle to zero). The standard machine carrier is set to different heights so that the standard wafer is located at different preset heights, and the same position of the standard wafer is scanned by the critical dimension scanning electron microscope at each preset height to obtain the focusing data of the standard wafer at different preset heights. Then, the focusing data corresponding to the two adjacent preset heights and the two adjacent preset heights are respectively subtracted to obtain the corresponding height difference data and focusing difference data, and the height difference data and focusing difference data are used as height-focus comparison data. Through the above process, multiple groups of height-focus comparison data can be obtained, and then the ratio of the focusing difference data to the height difference data in each group of height-focus comparison data is obtained, and the average of all ratios is obtained to obtain the voltage height variation coefficient of the critical dimension scanning electron microscope.

[0059] In one embodiment of the present invention, after obtaining the height difference data corresponding to all the focus data groups, the maximum height difference data can be selected from the height difference data corresponding to all the focus data groups as the target height difference data, and the target height difference data can be substituted into the inclination data obtaining formula to obtain the inclination data of the standard wafer, and the inclination data of the standard wafer is the inclination data of the test platform carrier. The inclination data obtaining formula can be expressed as:

[0060]

[0061] Among them, θ is the inclination data of the platform carrier to be tested, Δh is the target height difference data, and X is the diameter of the standard wafer.

[0062] The method for acquiring the inclination data of the machine carrier to be tested is simple and direct, and can achieve the purpose of acquiring the inclination data of the machine carrier to be tested by using fewer processes.

[0063] In one embodiment of the present invention, since each focus data group has its corresponding calibration point pair, and each calibration point pair has its corresponding position information, each focus data group has its corresponding height difference data and position information, and then the position information is used as the horizontal coordinate and the height difference data is used as the vertical coordinate to obtain the position-height difference fitting curve formed by the height difference data and position information corresponding to all focus data groups. The maximum height difference data in the position-height difference fitting curve is obtained as the target height difference data, and the target height difference data is substituted into the inclination data calculation formula to obtain the inclination data of the standard wafer. The inclination data of the standard wafer is the inclination data of the test platform carrier. The inclination data calculation formula can be expressed as:

[0064]

[0065] Among them, θ is the inclination data of the platform carrier to be tested, Δh is the target height difference data, and X is the diameter of the standard wafer.

[0066] Since in the process of acquiring the target height difference data, it is possible that the maximum height difference data is not directly in the height difference data corresponding to all the acquired focus data groups, and may exist between two adjacent calibration point pairs, the actual value of the acquired target height difference data should be greater than the height difference data corresponding to all the focus data groups. The method of acquiring the target height difference data by using the position-height difference fitting curve method can acquire the height difference data outside the calibration point pairs. Therefore, the method of acquiring the inclination data of the machine platform carrier to be tested can make the acquired inclination data of the machine platform carrier to be tested have higher accuracy than the above-mentioned method of acquiring the inclination data of the machine platform carrier to be tested. In one embodiment of the present invention, based on the use of the position-height difference fitting curve method to acquire the inclination data of the machine platform carrier to be tested, the machine platform carrier flatness measurement method can also include the following step S103.

[0067] Step S103, obtaining the position information corresponding to the target height difference data in the calibration point position-height difference fitting curve as the target position information, and determining the tilt direction and position information of the platform carrier to be tested based on the positive and negative attributes of the target height difference data and the target position information.

[0068] refer to Figure 2As shown, since the machine carrier may tilt to one side or the other side, the tilt direction of the machine carrier cannot be determined only by the inclination data. At this time, the present embodiment can also be set in step S102, when obtaining the voltage difference data corresponding to the focusing data group, to set each calibration point pair to be the calibration focus data of the calibration point with a relatively small serial number minus the calibration focus data of the calibration point with a relatively large serial number. At this time, the height difference data obtained can be either positive or negative; similarly, the target height difference data obtained can also be either positive or negative. At this time, the position information corresponding to the target height difference data in the position-height difference fitting curve can be used as the target position information, and then the tilt direction and position information of the machine carrier to be tested can be determined by the positive and negative attributes and the target position of the target height difference data, combined with the preset fixed point position information.

[0069] For example, when measuring a standard wafer, the position directly below the circumference of its top view is set as the zero-angle starting point, and a calibration point is set at intervals of 20 degrees along the edge of the standard wafer in the counterclockwise direction. At this time, calibration point pairs (X1, X10), (X2, X11), (X3, X12), (X4, X13), (X5, X14), (X6, X15), (X7, X16), (X8, X17), and (X9, X18) can be obtained; if it is assumed that the height difference data corresponding to the calibration point pair (X1, X10) is the target height difference data, and the acquired target height difference data is a positive number, it means that the standard wafer is currently in a tilted state with the front higher and the back lower, and the tilted position is tilted from the calibration point X1 to the calibration point X10 direction, which further means that the carrier of the machine to be tested is currently in a tilted state with the front higher and the back lower, and the tilted position is tilted from the calibration point X1 to the calibration point X10 direction.

[0070] The machine carrier flatness measurement method provided by the embodiment of the present invention adopts a standard wafer as an auxiliary measurement wafer to avoid the height difference or warping of the wafer itself affecting the measurement result; a plurality of focus data groups are obtained by focusing and measuring multiple pairs of calibration points marked on the edge of the standard wafer at both ends of the diameter, and then the focus data groups are converted into height difference data, and finally the multiple groups of height difference data are fitted to obtain a calibration point position-height difference fitting curve, and the inclination of the machine carrier to be measured is obtained based on the maximum height difference data in the calibration point position-height difference fitting curve; by converting the acquisition of the inclination of the standard wafer into the acquisition of the inclination of the machine carrier to be measured, an accurate and fast flatness measurement process for the wafer carrier is achieved.

[0071] like Figure 5 As shown, this embodiment provides a platform carrier flatness measurement device, including a focus data set acquisition module and a tilt data acquisition module.

[0072] The focusing data set acquisition module is used to acquire the focusing data set measured when the standard wafer is placed flat on the test machine carrier. The focusing data set includes multiple focusing data groups, each of which includes calibration focusing data of two calibration points in a calibration point pair. The edge of the standard wafer is provided with multiple calibration point pairs with different position information, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer.

[0073] The inclination data acquisition module is used to acquire the corresponding height difference data based on each focus data group in the focus data set, and acquire the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups.

[0074] The arch variable of the standard wafer is zero, and all calibration focus data are obtained by preset electron microscope measurement.

[0075] The machine carrier flatness measurement device provided by the embodiment of the present invention adopts a standard wafer as an auxiliary measurement wafer to avoid the influence of height difference or warping of the wafer itself on the measurement result; a plurality of focus data groups are obtained by focusing measurement of multiple calibration points marked on the edge of the standard wafer at both ends of the diameter, and then the focus data groups are converted into height difference data, and finally the inclination of the machine carrier to be measured is obtained based on the maximum height difference data; by converting the acquisition of the inclination of the standard wafer into the acquisition of the inclination of the machine carrier to be measured, an accurate and fast flatness measurement process for the wafer carrier is realized.

[0076] The present application embodiment also provides a computer-readable storage medium. A person of ordinary skill in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the processor through a program, and the program can be stored in a computer-readable storage medium, and the storage medium is a non-transitory medium, such as a random access memory, a read-only memory, a flash memory, a hard disk, a solid-state hard disk, a magnetic tape, a floppy disk, an optical disc, and any combination thereof. The above-mentioned storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or a data center that includes one or more available media integrated. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a tape), an optical medium (for example, a digital video disc (DVD)), or a semiconductor medium (for example, a solid-state disk (SSD)), etc.

[0077] like Figure 6 As shown, an embodiment of the present application provides a terminal.

[0078] The terminal of this embodiment includes a processor and a memory connected to each other; the memory is used to store computer programs, and the processor is used to execute the computer programs stored in the memory, so that all or part of the steps in the method of the above embodiment can be implemented when the terminal executes.

[0079] The beneficial effects of all or part of the steps of the method in the above embodiment are the same as the beneficial effects obtained by applying the terminal provided by the embodiment of the present invention, and will not be described in detail here.

[0080] It should be noted that the memory may include random access memory (RAM) and may also include non-volatile memory, such as at least one disk storage. Similarly, the processor may also be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0081] Although the embodiments disclosed in the present invention are as above, the contents described are only embodiments adopted for facilitating the understanding of the present invention and are not intended to limit the present invention. Any technician in the technical field to which the present invention belongs can make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in the present invention, but the protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A method for measuring the flatness of a machine platform carrier, comprising: Acquire a focus data set measured when a standard wafer is placed flat on a carrier of a machine to be tested, the focus data set comprising a plurality of focus data groups, each of which comprises calibration focus data of two calibration points in a calibration point pair, a plurality of calibration point pairs with different position information are arranged on the edge of the standard wafer, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer; Acquire corresponding height difference data based on each of the focus data groups in the focus data set, and acquire inclination data of the test platform carrier based on the height difference data corresponding to all of the focus data groups; The arch variable of the standard wafer is zero, and all the calibration focus data are obtained by measuring with a preset electron microscope.

2. The measuring method according to claim 1, characterized in that: The preset electron microscope is a critical dimension scanning electron microscope, and the calibrated focus data in the focus data group is voltage data.

3. The measuring method according to claim 2, characterized in that: Acquiring corresponding height difference data based on the focus data group includes: Subtracting two calibrated focus data in the focus data group to obtain voltage difference data; The voltage difference data is multiplied by the voltage height variation coefficient of the critical dimension scanning electron microscope to obtain the height difference data corresponding to the focus data set.

4. The measuring method according to claim 3, characterized in that: The process of obtaining the voltage height variation coefficient of the critical dimension scanning electron microscope includes: The focus data of a standard wafer at different preset heights is measured by the critical dimension scanning electron microscope, and the difference between two adjacent preset heights and their corresponding focus data is respectively made to obtain multiple sets of height-focus comparison data. Based on the multiple sets of height-focus comparison data, the voltage height variation coefficient of the critical dimension scanning electron microscope is obtained.

5. The measuring method according to claim 3, characterized in that: The calibration point pair on the standard wafer is set in the following manner: taking a preset fixed point on the edge of the standard wafer as a zero angle starting point, setting a plurality of calibration points with angle position information in sequence along the edge of the standard wafer, and setting two calibration points on the same diameter of the standard wafer as a calibration point pair; When obtaining the voltage difference data corresponding to the focusing data group, the calibrated focusing data of the calibration point with a relatively small serial number in the corresponding calibration point pair is subtracted from the calibrated focusing data of the calibration point with a relatively large serial number. At this time, the height difference data obtained is a positive or negative number.

6. The measuring method according to claim 1 or 5, characterized in that: Acquiring the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups includes: Based on the height difference data corresponding to all the focus data groups and the position information of the calibration point pairs, a calibration point position-height difference fitting curve is obtained, and the maximum height difference data in the calibration point position-height difference fitting curve is obtained as the target height difference data, and the inclination data of the machine carrier to be tested is obtained based on the target height difference data.

7. The measuring method according to claim 6, characterized in that: Also includes: The position information corresponding to the target height difference data in the calibration point position-height difference fitting curve is obtained as the target position information, and the tilt direction and position information of the test platform carrier are determined based on the positive and negative attributes of the target height difference data and the target position information.

8. The measuring method according to claim 1, characterized in that: The calculation formula for the inclination data of the test platform carrier is: Wherein, θ is the inclination data of the platform carrier to be tested, Δh is the target height difference data, and X is the diameter of the standard wafer.

9. A machine platform carrier flatness measurement device, characterized in that: It includes a focus data set acquisition module and a tilt data acquisition module; The focusing data set acquisition module is used to acquire a focusing data set measured when a standard wafer is placed flat on a carrier of a machine to be tested, wherein the focusing data set includes a plurality of focusing data groups, each of which includes calibration focusing data of two calibration points in a calibration point pair, and a plurality of calibration point pairs with different position information are arranged on the edge of the standard wafer, and the two calibration points in each calibration point pair are located at two ends of a diameter on the standard wafer; The inclination data acquisition module is used to acquire corresponding height difference data based on each of the focus data groups in the focus data set, and acquire the inclination data of the test platform carrier based on the height difference data corresponding to all the focus data groups; The arch variable of the standard wafer is zero, and all the calibration focus data are obtained by measuring with a preset electron microscope.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the flatness measurement method of a platform carrier according to any one of claims 1 to 8 is implemented.

11. A terminal comprising a memory, a processor and a computer program stored in the memory, characterized in that: The processor executes the computer program to implement the flatness measurement method of a platform carrier according to any one of claims 1 to 8.

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