Testing device and testing system

Abstract

The invention relates to the field of testing, in particular to a testing device and a testing system.In the testing device, the first load end of a phase-shifted full-bridge unit is connected to the first end of a primary winding of each transformer, and the second load end of the phase-shifted full-bridge unit is connected to the second end of the primary winding of each transformer; the phase-shifted full-bridge unit is used for converting direct-current voltage output by the direct-current power source into alternating-current voltage, the first end of a secondary winding of each transformer is connected to the first testing end of the corresponding testing circuit, and the second end of the secondary winding of each transformer is connected to the second testing end of the corresponding testing circuit. The first test end and the second test end are used for outputting test signals to test the corresponding test circuits, the positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative electrode of the direct-current power supply. According to the embodiment of the invention, the aging test can be carried out on a plurality of test circuits, and the method has the characteristics of low equipment complexity and cost.

Description

Technical Field

[0001] The present disclosure relates to the field of testing technology, and in particular to a testing device and a testing system. Background Art

[0002] With the urgent global demand for renewable energy, photovoltaic power generation, as a clean, efficient and sustainable form of energy, has received unprecedented attention and rapid development. Photovoltaic power generation systems use the photovoltaic effect to convert light energy into electrical energy through solar panels, while the boost module is responsible for boosting the DC power generated by the photovoltaic module to a voltage level suitable for grid access or energy storage equipment. In photovoltaic boost modules, the application of silicon carbide (SiC) materials has brought new breakthroughs in improving efficiency and performance.

[0003] Silicon carbide (SiC), as a new type of semiconductor material, has excellent physical and chemical properties, such as high hardness, high melting point, high thermal conductivity and low resistivity. Compared with traditional silicon (Si) materials, SiC materials show higher efficiency and longer service life under high pressure, high temperature and high frequency environments. Therefore, the application of SiC materials in photovoltaic boost modules has significant advantages. As the core of photovoltaic boost modules, silicon carbide devices have higher requirements for their reliability and stability.

[0004] Therefore, it is extremely important to conduct aging and reliability tests on silicon carbide photovoltaic boost modules after mass production. Summary of the invention

[0005] According to one aspect of the present disclosure, a testing device is provided, the testing device comprising a DC power supply, a high-frequency transformer module, and a feedback module, the high-frequency transformer module comprising a phase-shifted full-bridge unit and at least one transformer, wherein:

[0006] The positive electrode and negative electrode of the DC power supply are respectively connected to the positive voltage input terminal and the negative voltage input terminal of the phase-shifted full-bridge unit, and the positive electrode of the DC power supply is also connected to the first terminal of the feedback module.

[0007] The first load end of the phase-shifted full-bridge unit is connected to the first end of the primary winding of each transformer, and the second load end of the phase-shifted full-bridge unit is connected to the second end of the primary winding of each transformer. The phase-shifted full-bridge unit is used to convert the DC voltage output by the DC power supply into an AC voltage.

[0008] Each transformer is used to perform an aging test on each test circuit, wherein the first end of the secondary winding of each transformer is connected to the first test end of the corresponding test circuit, and the second end of the secondary winding of each transformer is connected to the second test end of the corresponding test circuit. The first test end and the second test end are used to output a test signal to test the corresponding test circuit.

[0009] The positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative electrode of the DC power supply.

[0010] In a possible implementation manner, the feedback module includes a feedback filter inductor, a first end of the feedback filter inductor serves as the first end of the feedback module, and a second end of the feedback filter inductor serves as the second end of the feedback module.

[0011] In a possible implementation, the test circuit includes a first branch and a second branch, the first end of the first branch is connected to the first end of the second branch as a positive feedback end of the test circuit, and the second end of the first branch is connected to the second end of the second branch as a negative feedback end of the test circuit, wherein:

[0012] The first branch and the second branch both include a diode and a transistor. For any one of the first branch and the second branch: one end of the diode is connected to the drain or source of the transistor as a test end of the test circuit, the other end of the diode serves as a positive feedback end of the test circuit or a negative feedback end of the test circuit, and the source or drain of the transistor serves as a negative feedback end of the test circuit or a positive feedback end of the test circuit.

[0013] In a possible implementation manner, the first branch includes a first branch diode and a first branch transistor, and an anode of the first branch diode is connected to a drain of the first branch transistor as a first test terminal of the test circuit.

[0014] The second branch includes a second branch diode and a second branch transistor, and the anode of the second branch diode is connected to the drain of the second branch transistor as the second test terminal of the test circuit.

[0015] The cathode of the first branch diode is connected to the cathode of the second branch diode as a positive feedback terminal of the test circuit.

[0016] The source of the second branch transistor is connected to the source of the first branch transistor as a negative feedback terminal of the test circuit.

[0017] In a possible implementation, the phase-shifted full-bridge unit includes a first full-bridge transistor, a second full-bridge transistor, a third full-bridge transistor, and a fourth full-bridge transistor, wherein:

[0018] The drain of the first full-bridge transistor is connected to the drain of the second full-bridge transistor as a positive voltage input terminal of the phase-shifted full-bridge unit.

[0019] The source of the third full-bridge transistor and the source of the fourth full-bridge transistor are connected to serve as the negative voltage input terminal of the phase-shift full-bridge unit.

[0020] The source of the first full-bridge transistor is connected to the drain of the third full-bridge transistor as a first load terminal of the phase-shifted full-bridge unit.

[0021] The source of the second full-bridge transistor is connected to the drain of the fourth full-bridge transistor as a second load terminal of the phase-shifted full-bridge unit.

[0022] In a possible implementation, the high-frequency transformer module further includes a signal generating unit, which is used to generate a switch control signal, and the switch control signal acts on each full-bridge transistor of the phase-shift full-bridge unit to control the phase-shift full-bridge unit to perform high-frequency conversion on the DC voltage.

[0023] In a possible implementation manner, the signal generating unit is further used for:

[0024] The phase shift angle of the phase-shifted full-bridge unit is controlled to adjust the test current flowing into the first test end and the second test end.

[0025] In a possible implementation manner, the product of the ratio of the secondary winding voltage to the primary winding voltage of the transformer and the DC voltage output by the DC power supply is greater than or equal to the normal operating voltage of the test circuit.

[0026] In a possible implementation manner, a ratio of a secondary winding voltage to a primary winding voltage of the transformer is greater than or equal to 2.

[0027] According to one aspect of the present disclosure, a test system is provided, and the test system includes the test device.

[0028] The test device of the disclosed embodiment converts DC voltage into AC voltage and boosts it through a high-frequency transformer module, and can perform aging tests on multiple test circuits. Both ends of the stimulation winding of each transformer can output high-voltage, high-current test signals. In addition, due to the presence of the transformer, the input power supply and load do not need to be set to a higher power, which reduces the complexity and cost of the equipment compared to related technologies.

[0029] It should be understood that the above general description and the following detailed description are exemplary and explanatory only and do not limit the present disclosure. Other features and aspects of the present disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used to illustrate the technical solutions of the present disclosure together with the specification.

[0031] Figure 1 A schematic diagram of a testing device according to an embodiment of the present disclosure is shown.

[0032] Figure 2 A schematic diagram of a testing device according to an embodiment of the present disclosure is shown.

[0033] Figure 3a A schematic diagram of a photovoltaic boost module is shown.

[0034] Figure 3b A schematic diagram of a current aging test module is shown.

[0035] Figure 4a , Figure 4b The voltage waveform diagram and the current waveform diagram at both ends of the diode obtained by performing a simulation test on the operation of the test device are respectively shown.

[0036] Figure 5a , Figure 5b The voltage waveform diagram and the current waveform diagram at both ends of the transistor obtained by performing a simulation test on the operation of the test device are respectively shown. DETAILED DESCRIPTION

[0037] Various exemplary embodiments, features and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0038] In the description of the present disclosure, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0039] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0040] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0041] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.

[0042] In the embodiments of the present disclosure, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent the following three situations: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the embodiments of the present disclosure, the term "at least one" represents any combination of at least two of any one or more of a plurality of. For example, including at least one of A, B, and C can represent including any one or more elements selected from the set consisting of A, B, and C.

[0043] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific embodiments. It should be understood by those skilled in the art that the present disclosure can also be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present disclosure.

[0044] See also Figure 1 , Figure 1 A schematic diagram of a testing device according to an embodiment of the present disclosure is shown.

[0045] like Figure 1 As shown, the test device includes a DC power supply 10, a high-frequency transformer module 20, and a feedback module 30. The high-frequency transformer module 20 includes a phase-shifted full-bridge unit 210 and at least one transformer 220, wherein:

[0046] The positive electrode and negative electrode of the DC power supply 10 are respectively connected to the positive voltage input terminal and the negative voltage input terminal of the phase-shifted full-bridge unit 210, and the positive electrode of the DC power supply 10 is also connected to the first terminal of the feedback module 30.

[0047] The first load end of the phase-shifted full-bridge unit 210 is connected to the first end of the primary winding of each transformer 220, and the second load end of the phase-shifted full-bridge unit 210 is connected to the second end of the primary winding of each transformer 220. The phase-shifted full-bridge unit 210 is used to convert the DC voltage output by the DC power supply 10 into an AC voltage.

[0048] Each transformer 220 is used to perform an aging test on each test circuit 40, wherein a first end of a secondary winding of each transformer 220 is connected to a first test end of a corresponding test circuit 40, and a second end of a secondary winding of each transformer 220 is connected to a second test end of a corresponding test circuit 40, and the first test end and the second test end are used to output a test signal to test the corresponding test circuit 40.

[0049] The positive feedback end of each test circuit 40 is connected to the second end of the feedback module 30 , and the negative feedback end of each test circuit 40 is connected to the negative electrode of the DC power supply 10 .

[0050] The test device of the disclosed embodiment converts DC voltage into AC voltage and boosts it through a high-frequency transformer module 20, and can perform aging tests on multiple test circuits 40. Both ends of the stimulation winding of each transformer 220 can output high-voltage, high-current test signals. In addition, due to the presence of the transformer 220, the input power supply and load do not need to be set to a higher power, thereby reducing the complexity and cost of the equipment compared to related technologies.

[0051] The embodiments of the present disclosure do not limit the specific implementation methods of the DC power supply 10, the high-frequency transformer module 20, the feedback module 30, and the phase-shifted full-bridge unit 210. Those skilled in the art may adopt appropriate technical solutions according to actual conditions and needs. It should be understood that each module and unit may be implemented by a hardware circuit. The embodiments of the present disclosure do not limit the specific number of transformers 220. The number of transformers 220 may correspond to the number of test circuits 40, and those skilled in the art may set it according to actual conditions and needs.

[0052] The embodiment of the present disclosure does not limit the transformation ratio of each transformer 220, and those skilled in the art can set it according to actual conditions and needs, as long as the DC voltage V1 output by the DC power supply 10 reaches (greater than or equal to) the normal working voltage of the circuit to be tested in the real system after boosting (α×V1). In a possible implementation, the ratio α of the secondary winding voltage to the primary winding voltage of the transformer 220 is greater than or equal to 2. In a possible implementation, if the DC voltage is 500V and the working voltage is 1500V, the ratio of the secondary winding voltage to the primary winding voltage of the transformer 220 is 3.

[0053] See also Figure 2 , Figure 2 A schematic diagram of a testing device according to an embodiment of the present disclosure is shown.

[0054] In a possible implementation, Figure 2 As shown, the feedback module 30 may include a feedback filter inductor L1, a first end of the feedback filter inductor L1 serves as a first end of the feedback module 30, and a second end of the feedback filter inductor L1 serves as a second end of the feedback module 30. The feedback filter inductor L1 may filter the feedback signal (the electrical signal flowing from the test circuit 40 to the DC power supply).

[0055] For example, Figure 2 As shown, the DC power supply 10 may include a battery assembly, and the battery assembly may include one or more battery cells. The battery cell may be any one of a lithium-ion battery, a lithium polymer battery, a lead-acid battery, etc., and the embodiments of the present disclosure do not limit this. The embodiments of the present disclosure do not limit the voltage of the DC power supply 10, and those skilled in the art may set it according to actual conditions and needs. For example, the DC power supply 10 may be a low-voltage power supply of about 500V.

[0056] In a possible implementation, Figure 2 As shown, the test circuit 40 may include a first branch 410 and a second branch 420, wherein the first end of the first branch 410 is connected to the first end of the second branch 420 as a positive feedback end of the test circuit 40, and the second end of the first branch 410 is connected to the second end of the second branch 420 as a negative feedback end of the test circuit 40, wherein:

[0057] The first branch 410 and the second branch 420 both include a diode (such as a silicon carbide Schottky diode) and a transistor (such as a silicon carbide MOSFET). For any one of the first branch 410 and the second branch 420: one end of the diode is connected to the drain or source of the transistor as a test end of the test circuit 40, the other end of the diode serves as a positive feedback end of the test circuit 40 or a negative feedback end of the test circuit 40, and the source or drain of the transistor serves as a negative feedback end of the test circuit 40 or a positive feedback end of the test circuit 40.

[0058] In a possible implementation, Figure 2 As shown, the first branch 410 may include a first branch diode D1 and a first branch transistor Q40. The anode of the first branch diode D1 is connected to the drain of the first branch transistor Q40 as the first test terminal of the test circuit 40.

[0059] The second branch 420 includes a second branch diode D2 and a second branch transistor Q41. The anode of the second branch diode D2 is connected to the drain of the second branch transistor Q41 as the second test terminal of the test circuit 40.

[0060] The cathode of the first branch diode D1 is connected to the cathode of the second branch diode D2 as the positive feedback terminal of the test circuit 40.

[0061] The source of the second branch transistor Q41 is connected to the source of the first branch transistor Q40 as a negative feedback terminal of the test circuit 40 .

[0062] See also Figure 3a , Figure 3a A schematic diagram of a photovoltaic boost module is shown.

[0063] See also Figure 3b , Figure 3b A schematic diagram of a current aging test module is shown.

[0064] like Figure 3b As shown, the aging test module uses an inductor as a load. By modulating the four switch tubes, the current of the inductor can be made sinusoidal or other waveforms that meet its working conditions, thereby simulating the working voltage and current conditions in the actual system, and also simulating the temperature rise state during operation. At the same time, since the inductor is used as a reactive load, the system input only needs a small power to overcome the loss in the line and the device.

[0065] However, for Figure 3a The photovoltaic boost module and other circuit modules including the first branch 410 and the second branch 420 are shown. Figure 3b The aging test module shown cannot perform voltage and current aging on the transistors (such as silicon carbide MOSFET) and diodes (such as silicon carbide Schottky diodes) inside the module at the same time. For example, the aging test module can be used to perform high voltage and high current aging on the diode, but at this time the transistor only passes a very small current. Alternatively, the input power supply and the load (feedback or resistance) are set to have very high power, and the output voltage of the full-bridge circuit of the aging test module is directly connected to the feedback load or the resistance load, but this solution increases the complexity and cost of the aging equipment.

[0066] The testing device proposed in the embodiment of the present disclosure can simultaneously perform high voltage and high current aging on the transistors and diodes inside the boost module, while achieving reactive load, thus solving the problems of existing solutions.

[0067] For example, Figure 2 and Figure 3aAs shown, the test circuit 40 can be the part to be tested of the boost module. Of course, the test circuit 40 can also be the part to be tested in other modules, as long as it includes at least one branch composed of a diode and a transistor, the embodiment of the present disclosure can perform aging and performance tests on the diode and the transistor at the same time.

[0068] For example, Figure 2 As shown, the embodiment of the present disclosure uses a high-frequency transformer module 20 to perform high-frequency conversion on the voltage and current of the DC power supply 10 and boost the voltage to obtain an AC voltage and an AC current. The first branch 410 and the second branch 420 can be used as a rectifier module, wherein, Figure 2 As shown, the transistor acts as a synchronous rectifier and the diode acts as a passive rectifier.

[0069] The disclosed embodiment does not limit the types of transistors in the first branch 410 and the second branch 420 , and those skilled in the art may determine the types according to actual conditions.

[0070] In a possible implementation, Figure 2 As shown, the phase-shifted full-bridge unit 210 may include a first full-bridge transistor Q21, a second full-bridge transistor Q22, a third full-bridge transistor Q23, and a fourth full-bridge transistor Q24, wherein:

[0071] The drain of the first full-bridge transistor Q21 is connected to the drain of the second full-bridge transistor Q22 as the positive voltage input terminal of the phase-shifted full-bridge unit 210.

[0072] The source of the third full-bridge transistor Q23 and the source of the fourth full-bridge transistor Q24 are connected to serve as the negative voltage input terminal of the phase-shift full-bridge unit 210.

[0073] The source of the first full-bridge transistor Q21 is connected to the drain of the third full-bridge transistor Q23 as the first load terminal of the phase-shifted full-bridge unit 210.

[0074] The source of the second full-bridge transistor Q22 is connected to the drain of the fourth full-bridge transistor Q24 as a second load terminal of the phase-shifted full-bridge unit 210 .

[0075] The disclosed embodiment does not limit the type of each full-bridge transistor in the phase-shift full-bridge unit 210. Those skilled in the art can set it according to actual conditions and needs. For example, the full-bridge transistor includes any one of a thyristor, a switching diode, a switching triode, a photocoupler, a transistor, etc. The transistor can be a metal-oxide semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), wherein the transistor can be based on silicon carbide SiC, gallium nitride GaN to improve performance.

[0076] Of course, the phase-shifted full-bridge unit 210 may also directly adopt an existing full-bridge module, which is not limited in the embodiments of the present disclosure.

[0077] In a possible implementation, the high-frequency transformer module 20 may further include a signal generating unit, which is used to generate a switch control signal, and the switch control signal acts on the gates of each full-bridge transistor of the phase-shift full-bridge unit 210 to control the phase-shift full-bridge unit 210 to perform high-frequency conversion on the DC voltage.

[0078] The embodiments of the present disclosure do not limit the specific implementation method of the signal generating unit. Those skilled in the art may adopt relevant technologies to implement it according to actual conditions and needs. For example, the signal generating unit may include a processing component and a PWM generator. The processing component generates a corresponding switch control signal by setting parameters of the PWM generator.

[0079] In one example, the processing component includes but is not limited to a separate processor, or a discrete component, or a combination of a processor and a discrete component. The processor may include a controller having an execution instruction function in an electronic device, and the processor may be implemented in any appropriate manner, for example, by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components. Inside the processor, the executable instructions may be executed by hardware circuits such as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers.

[0080] In a possible implementation manner, the signal generating unit may also be used for:

[0081] The phase shift angle of the phase-shift full-bridge unit 210 is controlled to adjust the test current flowing into the first test end and the second test end.

[0082] The embodiments of the present disclosure do not limit the specific implementation method of controlling the phase shift angle of the phase-shifted full-bridge unit 210. Those skilled in the art can adopt relevant technologies to implement it according to actual conditions and needs. For example, a fixed switching frequency can be set and the switching moment can be adjusted to change the phase shift angle; the switching moment and duty cycle can also be adjusted to achieve precise control of the phase shift angle.

[0083] For example, Figure 2 As shown, the DC voltage (500V) passes through the phase-shifted full-bridge unit and the transformer 220 with a transformation ratio of 1 to 3. The transformer 220 is connected to the diode of the 2KV photovoltaic boost module and the midpoint of the transistor. At this time, the photovoltaic boost module (the first branch 410 and the second branch 420) is used as a rectifier module in the test device, wherein the transistor is used as a synchronous rectifier and the diode is used as a passive rectifier. In this test device, the peak value output at the output end of the transformer 220 is an alternating current of 3 times the input voltage, i.e., 1500V. This voltage is the working voltage of the boost module in the real system. For modules with different voltages, the input voltage can be adjusted to achieve different output voltages. During the rectification process, the transistor and the diode alternately bear the reverse pressure of 1500V, and the current fed back to the source end by the transformer 220. The current size can be achieved by adjusting the phase shift angle of the phase-shifted full bridge. At the same time, the high-voltage DC output is directly fed back to the power supply end through inductive filtering, and the input power supply only needs to overcome the loss without high power output.

[0084] See also Figure 4a , Figure 4b , Figure 5a , Figure 5b , Figure 4a , Figure 4b The voltage waveform and current waveform at both ends of the diode obtained by simulating the operation of the test device are shown respectively. Figure 5a , Figure 5b The voltage waveform diagram and the current waveform diagram at both ends of the transistor obtained by performing a simulation test on the operation of the test device are respectively shown.

[0085] like Figure 4a , Figure 4b As shown, during operation, the diode withstands a reverse voltage of 1500V and a forward peak current of 40A. The current can be increased by adjusting the phase shift angle. In this working mode, the diode undergoes voltage and current aging at the same time.

[0086] like Figure 5a , Figure 5bAs shown in FIG. 1 , the channel of the transistor also passes a peak current of 40 A and withstands a reverse voltage of up to 1500 V. Simultaneous voltage and current aging is performed.

[0087] According to one aspect of the present disclosure, a test system is provided, and the test system includes the test device.

[0088] The various aspects of the embodiments of the present disclosure have the following beneficial effects

[0089] At the same time, the transistors and diodes of the photovoltaic boost module are aged in the form of voltage and current;

[0090] The device has its own energy feedback to reduce the use of electricity in production;

[0091] It can adapt to various voltage and current conditions according to the module's withstand voltage and current level;

[0092] The two phases are aged at the same time, which reduces working hours and increases efficiency.

[0093] The embodiments of the present disclosure have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used in the embodiments of the present disclosure is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed in the embodiments of the present disclosure.

Claims

1. A testing device, characterized in that: The test device includes a DC power supply, a high-frequency transformer module, and a feedback module. The high-frequency transformer module includes a phase-shifted full-bridge unit and at least one transformer. The positive electrode and negative electrode of the DC power supply are respectively connected to the positive voltage input terminal and the negative voltage input terminal of the phase-shifted full-bridge unit, and the positive electrode of the DC power supply is also connected to the first terminal of the feedback module. The first load end of the phase-shifted full-bridge unit is connected to the first end of the primary winding of each transformer, and the second load end of the phase-shifted full-bridge unit is connected to the second end of the primary winding of each transformer. The phase-shifted full-bridge unit is used to convert the DC voltage output by the DC power supply into an AC voltage. Each transformer is used to perform an aging test on each test circuit, wherein the first end of the secondary winding of each transformer is connected to the first test end of the corresponding test circuit, and the second end of the secondary winding of each transformer is connected to the second test end of the corresponding test circuit. The first test end and the second test end are used to output a test signal to test the corresponding test circuit. The positive feedback end of each test circuit is connected to the second end of the feedback module, and the negative feedback end of each test circuit is connected to the negative electrode of the DC power supply.

2. The testing device according to claim 1, characterized in that: The feedback module includes a feedback filter inductor, a first end of the feedback filter inductor serves as a first end of the feedback module, and a second end of the feedback filter inductor serves as a second end of the feedback module.

3. The testing device according to claim 1, characterized in that: The test circuit comprises a first branch and a second branch, wherein the first end of the first branch is connected to the first end of the second branch as a positive feedback end of the test circuit, and the second end of the first branch is connected to the second end of the second branch as a negative feedback end of the test circuit, wherein: The first branch and the second branch both include a diode and a transistor. For any one of the first branch and the second branch: one end of the diode is connected to the drain or source of the transistor as a test end of the test circuit, the other end of the diode serves as a positive feedback end of the test circuit or a negative feedback end of the test circuit, and the source or drain of the transistor serves as a negative feedback end of the test circuit or a positive feedback end of the test circuit.

4. The testing device according to claim 3, characterized in that: The first branch includes a first branch diode and a first branch transistor, and the anode of the first branch diode is connected to the drain of the first branch transistor as a first test terminal of the test circuit. The second branch includes a second branch diode and a second branch transistor, and the anode of the second branch diode is connected to the drain of the second branch transistor as the second test terminal of the test circuit. The cathode of the first branch diode is connected to the cathode of the second branch diode as a positive feedback terminal of the test circuit. The source of the second branch transistor is connected to the source of the first branch transistor as a negative feedback terminal of the test circuit.

5. The testing device according to claim 1, characterized in that: The phase-shifted full-bridge unit includes a first full-bridge transistor, a second full-bridge transistor, a third full-bridge transistor, and a fourth full-bridge transistor, wherein: The drain of the first full-bridge transistor is connected to the drain of the second full-bridge transistor as a positive voltage input terminal of the phase-shifted full-bridge unit. The source of the third full-bridge transistor and the source of the fourth full-bridge transistor are connected to serve as the negative voltage input terminal of the phase-shift full-bridge unit. The source of the first full-bridge transistor is connected to the drain of the third full-bridge transistor as a first load terminal of the phase-shifted full-bridge unit. The source of the second full-bridge transistor is connected to the drain of the fourth full-bridge transistor as a second load terminal of the phase-shifted full-bridge unit.

6. The testing device according to claim 5, characterized in that: The high-frequency voltage conversion module also includes a signal generating unit, which is used to generate a switch control signal. The switch control signal acts on each full-bridge transistor of the phase-shift full-bridge unit to control the phase-shift full-bridge unit to perform high-frequency conversion on the DC voltage.

7. The testing device according to claim 6, characterized in that: The signal generating unit is also used for: The phase shift angle of the phase-shifted full-bridge unit is controlled to adjust the test current flowing into the first test end and the second test end.

8. The testing device according to claim 1, characterized in that: The product of the ratio of the secondary winding voltage to the primary winding voltage of the transformer and the DC voltage output by the DC power supply is greater than or equal to the normal operating voltage of the test circuit.

9. The testing device according to claim 8, characterized in that: The ratio of the secondary winding voltage to the primary winding voltage of the transformer is greater than or equal to 2.

10. A testing system, characterized in that: The testing system comprises the testing device according to any one of claims 1-9.

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