Method, system, device, storage medium and program product for detecting dynamic on-resistance of power device

Abstract

The application relates to a power device dynamic on-resistance detection method, system, device, storage medium and program product, which is applied to a power device dynamic on-resistance detection system, and the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector, wherein the double-pulse test circuit is installed with a measured gallium nitride power device; the method comprises the following steps: under the condition that the test temperature of the measured gallium nitride power device meets preset test conditions, sending multiple groups of double-pulse test signals to the double-pulse test circuit through the controller; collecting multiple groups of electrical test parameters of the measured gallium nitride power device under the multiple groups of double-pulse test signals through the signal collector; and detecting the on-resistance of the measured gallium nitride power device based on the multiple groups of electrical test parameters through the upper computer. The method improves the detection accuracy of power device dynamic on-resistance detection.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power device detection, in particular to a power device dynamic on-resistance detection method, system, computer device, computer readable storage medium and computer program product. BACKGROUND

[0002] With the continuous development of science and technology, developing efficient electronic power devices has become the core task of the power electronics field. The measured gallium nitride power device as a key component in the power electronic system makes the improvement of the measured gallium nitride power device a top priority. Since the dynamic on-resistance degradation of the measured gallium nitride power device is the main factor affecting the reliability and power loss of the measured gallium nitride power device, it is essential to detect the on-resistance of the measured gallium nitride power device.

[0003] Currently, in the process of detecting the on-resistance of the measured gallium nitride power device, a certain voltage is usually applied across the measured gallium nitride power device, and then the on-resistance is detected using Ohm's law. However, due to the self-heating phenomenon of the measured gallium nitride power device during continuous switching, and the influence of internal charge trapping, hot electron effect, etc. on the on-resistance of the measured gallium nitride power device, there is a dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the measured gallium nitride power device, which makes it easy to occur that the dynamic on-resistance detection of the power device cannot reflect the actual working condition value, so the detection accuracy of the current power device dynamic on-resistance detection is low. SUMMARY

[0004] Therefore, it is necessary to provide a power device dynamic on-resistance detection method, system, computer device, computer readable storage medium and computer program product for improving the detection accuracy of power device dynamic on-resistance detection.

[0005] In a first aspect, the present application provides a power device dynamic on-resistance detection method applied to a power device dynamic on-resistance detection system, the power device dynamic on-resistance detection system comprising an upper computer, a controller, a double-pulse test circuit and a signal collector, wherein the double-pulse test circuit is installed with a measured gallium nitride power device; the method comprises:

[0006] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, the controller sends a plurality of groups of double-pulse test signals to the double-pulse test circuit, wherein the plurality of groups of double-pulse test signals are used to generate different off-state stress times;

[0007] acquire, by the signal collector, a plurality of electrical test parameters of the measured gallium nitride power device under the plurality of double-pulse test signals;

[0008] detect, by the host computer, the on-resistance of the measured gallium nitride power device based on the plurality of electrical test parameters.

[0009] In one of the embodiments, the double-pulse test circuit includes a gate drive circuit and a current drive circuit, and the power device dynamic on-resistance detection system further includes an auxiliary power supply configured to provide power supply for the gate drive circuit and the current drive circuit respectively, and the plurality of electrical test parameters includes a plurality of on-voltages and a plurality of on-currents.

[0010] The acquiring, by the signal collector, a plurality of electrical test parameters of the measured gallium nitride power device under the plurality of double-pulse test signals includes:

[0011] According to the plurality of double-pulse test signals, acquiring, by the signal collector, an on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit.

[0012] According to the plurality of double-pulse test signals, acquiring, by the signal collector, an on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit.

[0013] In one of the embodiments, the double-pulse test circuit further includes a clamping circuit, and the auxiliary power supply is further configured to provide power supply for the clamping circuit; and the method further includes:

[0014] In the process of acquiring, by the signal collector, the plurality of electrical test parameters, clamping, by the clamping circuit, the plurality of double-pulse test signals.

[0015] In one of the embodiments, the double-pulse test circuit further includes a power loop, and the measured gallium nitride power device is installed in the power loop; and before the sending, by the controller, of the plurality of double-pulse test signals to the double-pulse test circuit, the method further includes:

[0016] providing, by the power loop, test current and test voltage for the measured gallium nitride power device, so as to make the measured gallium nitride power device in an initial test working condition.

[0017] In one of the embodiments, the detecting, by the host computer, the on-resistance of the measured gallium nitride power device based on the plurality of electrical test parameters includes:

[0018] The host computer determines the test resistance of the gallium nitride power device under test under the multiple sets of dual-pulse test signals based on the multiple sets of conduction voltages and multiple sets of conduction currents.

[0019] The on-resistance of the gallium nitride power device under test is detected based on multiple sets of test resistors.

[0020] In one embodiment, the power device dynamic on-resistance detection system further includes a temperature control system, which includes a temperature controller, a thermocouple, and a heating element, wherein the temperature controller, the thermocouple, the heating element, and the gallium nitride power device under test are connected in sequence.

[0021] Before sending multiple sets of dual-pulse test signals to the dual-pulse test circuit via the controller, provided that the test temperature of the gallium nitride power device under test meets the preset test conditions, the method further includes:

[0022] The heating element heats the gallium nitride power device under test, and the thermocouple transmits the real-time temperature of the gallium nitride power device under test to the temperature controller.

[0023] If the real-time temperature is detected to have reached the preset heating temperature, and the heating time for heating the gallium nitride power device under test is greater than or equal to the preset heating time threshold, then the test temperature of the gallium nitride power device under test is determined to meet the preset test conditions.

[0024] Secondly, it is applied to a dynamic on-resistance detection system for power devices. The dynamic on-resistance detection system for power devices includes a host computer, a controller, a dual-pulse test circuit, and a signal acquisition unit. The dual-pulse test circuit is equipped with the gallium nitride power device under test.

[0025] The controller is used to send multiple sets of dual-pulse test signals to the dual-pulse test circuit when the test temperature of the gallium nitride power device under test meets the preset test conditions. The multiple sets of dual-pulse test signals are used to generate different off-state stress times.

[0026] The signal acquisition device is used to acquire multiple sets of electrical test parameters of the gallium nitride power device under test under multiple sets of dual-pulse test signals.

[0027] The host computer is used to detect the on-resistance of the gallium nitride power device under test based on the multiple sets of electrical test parameters.

[0028] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0029] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; and the on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer.

[0030] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; and the on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer.

[0031] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; and the on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer.

[0032] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; and the on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer.

[0033] In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; and the on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer.

[0034] The power device dynamic on-resistance detection method, system, computer device, computer readable storage medium and computer program product are applied to a power device dynamic on-resistance detection system, and the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector. The double-pulse test circuit is installed with a measured gallium nitride power device. First, in the case that the test temperature of the measured gallium nitride power device meets the preset test condition, the controller sends multiple groups of double-pulse test signals to the double-pulse test circuit, wherein the multiple groups of double-pulse test signals are generated based on different off-state stress times. Then, the signal collector collects multiple groups of electrical test parameters of the measured gallium nitride power device under the multiple groups of pulse test signals. Finally, the upper computer detects the on-resistance of the measured gallium nitride power device based on the multiple groups of electrical test parameters. In the process of detecting the on-resistance of the measured gallium nitride power device, the multiple groups of double-pulse test signals acting on the on-resistance test are obtained by controlling the off-state stress time, and the relationship between the test temperature of the measured gallium nitride power device and the preset test condition is set, so that the self-heating effect of the measured gallium nitride power device is inhibited by controlling the off-state stress time. The purpose of applying controllable electrical stress and thermal stress to the measured gallium nitride power device to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the gallium nitride power device is achieved, rather than just detecting by the traditional on-resistance detection method. Therefore, the detection accuracy of the power device dynamic on-resistance detection is improved. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the embodiments or the related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0036] Figure 1 A flowchart of a power device dynamic on-resistance detection method in an embodiment;

[0037] Figure 2 A flowchart of a power device dynamic on-resistance detection method in another embodiment;

[0038] Figure 3 Fig. 2 is a schematic diagram of a double pulse test ideal waveform for a power device dynamic on-resistance detection method in an embodiment;

[0039] Figure 4 Fig. 3 is a schematic diagram of a power device dynamic on-resistance detection system for a power device dynamic on-resistance detection method in an embodiment;

[0040] Figure 5 Fig. 4 is a structural block diagram of a power device dynamic on-resistance detection system in an embodiment;

[0041] Figure 6 Fig. 5 is an internal structural diagram of a computer device in an embodiment. DETAILED DESCRIPTION

[0042] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not intended to limit the present application.

[0043] First of all, it should be understood that the performance of the power semiconductor device as a key component in the power electronic system has a decisive influence on the efficiency and power density of the power electronic system. At present, the traditional silicon (Si) based power device has reached its theoretical limit, and it is difficult to make breakthroughs in on-resistance and switching speed. Therefore, the power device based on wide bandgap semiconductor material, such as gallium nitride power device, is an ideal choice with high efficiency and high power density. It can be understood that, whether it is the mainstream gallium nitride power device or the traditional silicon-based power device, the dynamic on-resistance degradation is one of the key problems affecting its reliability and power loss. Among them, the dynamic on-resistance degradation is due to the trapping of charges in the internal traps of the device in the off state, thereby reducing the concentration of the gallium nitride / gallium nitride interface two-dimensional electron gas, resulting in an increase in dynamic on-resistance. This phenomenon significantly increases the power loss in high-frequency switching applications, thereby adversely affecting the system efficiency and stability. Therefore, it is of great significance to accurately evaluate the dynamic on-resistance degradation rule of the power device and to test the method close to the actual application conditions. The current commonly used dynamic on-resistance detection method of power device is as follows: 1) using the existing special power device analyzer to measure the static parameters of the power device; 2) building a dynamic resistance measurement circuit of the gallium nitride power device by using a direct current power supply, an inductive load, a resistive load, a protection diode, a device to be tested, an auxiliary switch, a same-phase drive, a test probe and a PWM signal module, and then realizing the simplified design of the circuit through the above circuit. However, the former has the defect that it cannot realize the fast switching of the device, so it cannot truly simulate the actual working condition of the power device. This test circuit also has strong dependence on timing, and it is difficult to quickly adjust to meet the diversified test conditions and requirements. The latter focuses on the flexibility of the modular load, but does not mention the control of the dynamic resistance off-state stress time, so that the dynamic resistance degradation test research has limitations, and the test accuracy is limited by the hardware configuration. Since there is no clamping circuit, the accurate measurement of the on-voltage drop of the device to be tested requires high-cost measurement probes and other hardware configurations, so the detection accuracy of the dynamic on-resistance detection of the power device has limitations. Therefore, there is an urgent need for a power device dynamic on-resistance detection method to improve the detection accuracy of the dynamic on-resistance detection of the power device.

[0044] In one embodiment, as Figure 1As shown, a power device dynamic on-resistance detection method is provided, and in the embodiment, the method is applied to a power device dynamic on-resistance detection system, which comprises a host computer, a controller, a double-pulse test circuit and a signal collector, wherein the double-pulse test circuit is installed with a measured gallium nitride power device, it can be understood that the host computer includes but is not limited to a personal computer, a notebook computer, a smart phone and a tablet computer, etc., the signal collector includes but is not limited to an oscilloscope, a digital signal collector and a general data collector, etc., the double-pulse test circuit is used to detect the on-resistance of the measured gallium nitride power device, which tests the key parameters such as switching characteristics, reverse recovery current and turn-off voltage peak by applying pulse signals at two different time points on the measured device, the controller includes but is not limited to an FPGA (Field Programmable Gate Array) controller and a microcontroller, etc., it can be understood that the double-pulse test circuit is deployed with a test circuit board, the test circuit board is installed with the measured gallium nitride power device, and the test circuit board includes but is not limited to an aluminum substrate, an epoxy board (FR-4) or a polyimide (PI) board, etc., the host computer, the controller, the double-pulse test circuit and the signal collector are electrically connected with each other, for example, in an implementable manner, the measured gallium nitride power device is welded on an aluminum substrate with high heat conduction performance, and the gate, drain and source pins are led out and connected to the power device dynamic on-resistance detection system, and the back of the aluminum substrate is tightly attached to a heating sheet, wherein the controller is used to send a plurality of double-pulse test signals to the double-pulse test circuit under the condition that the test temperature of the measured gallium nitride power device meets the preset test condition, wherein the plurality of double-pulse test signals are used to generate different off-state stress times, the signal collector is used to collect a plurality of test parameters of the measured gallium nitride power device under the plurality of double-pulse test signals, and the host computer is used to detect the on-resistance of the measured gallium nitride power device based on the plurality of electrical test parameters, through the signal interaction among the host computer, the controller, the double-pulse test circuit and the signal collector, the self-heating effect of the measured gallium nitride power device is inhibited by controlling the off-state stress time, the purpose of controllably applying electrical stress and thermal stress to the measured gallium nitride power device is achieved to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the gallium nitride power device, and therefore the detection accuracy of the power device dynamic on-resistance detection is improved. In the embodiment, the method comprises the following steps 202 to 206.

[0045] In step 202, a plurality of double-pulse test signals are sent to the double-pulse test circuit by the controller under the condition that the test temperature of the measured gallium nitride power device meets the preset test condition, wherein the plurality of double-pulse test signals are used to generate different off-state stress times.

[0046] It should be noted that the measured gallium nitride power device installed on the double pulse test circuit is connected to the power device dynamic on-resistance detection system through the lead-out pin. For example, in an implementable manner, the power device dynamic on-resistance detection system includes an upper computer, a controller, a double pulse test circuit, a signal collector, a control signal cable, a power supply cable, a test cable, and a test probe, etc. The signal collector can be an oscilloscope, and the controller can be an FPGA microcontroller. The oscilloscope is connected to the double pulse test circuit through the test probe, and the FPGA microcontroller is connected to the double pulse test circuit through the control signal cable. During the power device dynamic on-resistance detection process, the test probe is connected to the oscilloscope and the double pulse test circuit, respectively, and one end of another passive probe is connected to the clamping voltage test point of the PCB, and the other end is connected to the oscilloscope. The on-voltage drop of the test device is measured, and the grounding mode can also be a grounding spring.

[0047] It should be noted that the measured gallium nitride power device will have a self-heating effect, and the temperature of the measured gallium nitride power device will rise during continuous switching. As the temperature rises, the resistance value of the measured gallium nitride power device will rise, ultimately leading to inaccurate detection of the dynamic on-resistance of the power device. Therefore, before detecting the on-resistance of the measured gallium nitride power device based on the double pulse test signal, it is necessary to ensure that the test temperature of the measured gallium nitride power device meets the preset test condition. For example, in an implementable manner, the test temperature of the measured gallium nitride power device is controlled to be always below room temperature, and the controller generates multiple sets of double pulse test signals based on different off-state stress times and sends the multiple sets of double pulse test signals to the double pulse test circuit.

[0048] It should be noted that the off-state stress time refers to the internal stress of the measured gallium nitride power device in the off state caused by external factors such as current and voltage. To avoid the problem of low detection accuracy of the on-resistance caused by insufficient control of the off-state stress time, multiple sets of double pulse tests can be performed at different off-state stress times at one time. That is, the controller can generate multiple sets of double pulse test signals based on different off-state stress times, that is, multiple sets of double pulse test signals can be generated based on different off-state stress times.

[0049] As an example, step 202 includes: in the case where it is detected that the test temperature of the measured gallium nitride power device is greater than the preset temperature threshold, generating multiple sets of double pulse test signals based on different off-state stress times by the controller, and sending the multiple sets of double pulse test signals to the double pulse test circuit by the controller.

[0050] Step 204: Collecting multiple sets of electrical test parameters of the measured gallium nitride power device under multiple sets of double pulse test signals by the signal collector.

[0051] It should be noted that since the double-pulse test circuit is installed with the measured gallium nitride power device, and then the double-pulse test circuit can perform double-pulse test on the measured gallium nitride power device after receiving the double-pulse test signal, so that the signal collector can collect the electrical test parameters of the measured gallium nitride power device under different double-pulse test signals. For example, in an implementable manner, assuming that the signal collector is an oscilloscope, and then the oscilloscope can collect the on-current and on-voltage of the measured gallium nitride power device during the double-pulse test on the double-pulse test circuit.

[0052] As an example, step 204 includes: collecting the measured gallium nitride power device by the signal collector to obtain a plurality of sets of electrical test parameters of the measured gallium nitride power device under a plurality of sets of double-pulse test signals.

[0053] Step 206, detecting the on-resistance of the measured gallium nitride power device based on the plurality of sets of electrical test parameters by the host computer.

[0054] As an example, step 206 includes: receiving a plurality of sets of electrical test parameters by the host computer, and detecting the on-resistance of the measured gallium nitride power device according to the plurality of sets of test parameters.

[0055] The power device dynamic on-resistance detection method is applied to a power device dynamic on-resistance detection system, and the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector. The double-pulse test circuit is installed with a measured gallium nitride power device. First, in the case that the test temperature of the measured gallium nitride power device meets the preset test condition, the controller sends a plurality of double-pulse test signals to the double-pulse test circuit, wherein the plurality of double-pulse test signals are generated based on different off-state stress times. Then, the signal collector collects a plurality of electrical test parameters of the measured gallium nitride power device under the plurality of pulse test signals. Finally, the upper computer detects the on-resistance of the measured gallium nitride power device based on the plurality of electrical test parameters. In the process of detecting the on-resistance of the measured gallium nitride power device, the plurality of double-pulse test signals acting on the on-resistance test are obtained by controlling the off-state stress time, and the relationship between the test temperature of the measured gallium nitride power device and the preset test condition is set, so that the off-state stress time is controlled and the self-heating effect of the measured gallium nitride power device is inhibited. The purpose of applying controllable electrical stress and thermal stress to the measured gallium nitride power device to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the gallium nitride power device is achieved, rather than just using the traditional on-resistance detection method for detection. Therefore, due to the self-heating phenomenon of the measured gallium nitride power device in the continuous switching process, and the influence of internal charge trapping, hot electron effect and the like on the on-resistance of the measured gallium nitride power device, there is a dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the measured gallium nitride power device, which makes it easy to appear the situation that the power device dynamic on-resistance detection cannot reflect the actual working condition value. Therefore, the detection accuracy of the power device dynamic on-resistance detection is improved.

[0056] In one embodiment, as shown in FIG. 2, Figure 2 The double-pulse test circuit comprises a gate drive circuit and a current drive circuit, and the power device dynamic on-resistance detection system further comprises an auxiliary power supply for providing power for the gate drive circuit and the current drive circuit, respectively. The plurality of electrical test parameters comprise a plurality of on-voltages and a plurality of on-currents. The signal collector collects the plurality of electrical test parameters of the measured gallium nitride power device under the plurality of double-pulse test signals, comprising:

[0057] In step 302, the signal collector collects the on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit according to the plurality of double-pulse test signals.

[0058] At step 304, the signal collector collects the on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit according to the multiple sets of double-pulse test signals.

[0059] It should be noted that in the process of collecting electrical measurement parameters, specifically, the collection of multiple sets of on-voltage and multiple sets of on-current can be performed, thereby laying a foundation for subsequent power device dynamic on-resistance detection by the host computer. In the power device dynamic on-resistance detection system, in addition to the high-voltage direct current power supply, an auxiliary power supply can also be deployed to provide power for the gate drive circuit and the current drive circuit of the double-pulse test circuit, respectively. The working mode of the gate drive circuit is similar to the driving mode of the traditional silicon-based measured gallium nitride power device. The gate drive circuit needs to work in a high-frequency switching environment. To reduce the oscillation caused by the high rate of change of voltage and current, a suitable chip can be selected, so that at the isolated input side of the driving chip, the control signal is input by the field programmable logic gate array microcontroller, the supply and enable ports are provided with voltage by the auxiliary power supply, and the on-voltage , The output of the two output ports is similar to the voltage drive circuit. The current drive circuit can also select a suitable chip. The output side of the driving chip is used to adjust the on / off speed of the measured gallium nitride power device. The capacitor provides the current when the measured gallium nitride power device is turned on / off. The driving current control inductance and off-state voltage jointly control the driving current size. After driving the measured gallium nitride power device, the ideal waveform can be displayed.

[0060] As an example, steps 302 to 304 include: collecting, by the signal collector, the on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by sequentially applying multiple sets of double-pulse test signals to the measured gallium nitride power device; and collecting, by the signal collector, the on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by sequentially applying multiple sets of double-pulse test signals to the measured gallium nitride power device. This embodiment deploys an auxiliary power supply in the power device dynamic on-resistance detection system, and sets a gate drive circuit and a current drive circuit in the double-pulse test circuit, and then collects the on-voltage and on-current under the joint action of the gate drive circuit and the current drive circuit by the signal collector based on multiple sets of double-pulse test signals, thereby achieving the purpose of accurately collecting multiple sets of on-voltage and multiple sets of on-current of the measured gallium nitride power device under multiple sets of double-pulse test signals. One measured gallium nitride power device corresponds to one on-resistance and one on-current. Therefore, this embodiment lays a foundation for improving the detection accuracy of the on-resistance.

[0061] In one embodiment, the double-pulse test circuit further comprises a clamping circuit, and the auxiliary power supply is further configured to supply power for the clamping circuit; and the method further comprises:

[0062] In the process of collecting multiple sets of electrical test parameters by the signal collector, the multiple sets of double-pulse test signals are clamped by the clamping circuit.

[0063] It should be noted that, in order to improve the test accuracy of the on-state voltage drop of the measured gallium nitride power device, a clamping circuit can be deployed in the double-pulse test circuit. When the measured gallium nitride power device is off, the test voltage is stabilized by the voltage of the clamping voltage stabilizing tube. When the measured gallium nitride power device is on, the test voltage is the sum of the forward on-state voltage drop of the diode and the measured gallium nitride power device. Then, the two ends of the measured gallium nitride power device are short-circuited, and the clamping circuit is powered on. At this time, the measured test voltage is the accurate on-state voltage. That is, by clamping a part of the pulse signal to a specified voltage value through the clamping circuit while keeping the original waveform shape unchanged, the on-state voltage drop measurement accuracy of the measured gallium nitride power device is greatly improved.

[0064] As an example, in the process of collecting multiple sets of electrical test parameters by the signal collector, the multiple sets of double-pulse test signals are clamped by the clamping circuit.

[0065] In this embodiment, by setting a clamping circuit in the double-pulse test circuit, and then clamping multiple sets of double-pulse test signals by the clamping circuit in the process of collecting multiple sets of electrical test parameters by the signal collector, the test accuracy of the on-state voltage drop of the measured gallium nitride power device can be improved. Therefore, the detection accuracy of the dynamic on-state resistance detection of the power device is improved.

[0066] In one embodiment, the double-pulse test circuit further comprises a power loop, and the measured gallium nitride power device is installed in the power loop; and before the controller sends multiple sets of double-pulse test signals to the double-pulse test circuit, the method further comprises:

[0067] The power loop provides test current and test voltage for the measured gallium nitride power device, so that the measured gallium nitride power device is in an initial test working condition.

[0068] It should be noted that, in the double-pulse test circuit, a power loop can be deployed, wherein the power loop uses an inductor as a load, and the measured gallium nitride power device is in an initial test working condition. Figure 3 , Figure 3 A schematic diagram of an ideal waveform of double-pulse test, the measured gallium nitride power device is triggered for the first time at the first time The current flowing through the measured gallium nitride power device is the load current at this time, and the current rises linearly within the on-state pulse, is the off interval between two on pulses, during which the energy is temporarily stored in the inductor, and then at the second time the measured GaN power device is turned on again, and the turn-on current at this time is almost equal to the current at the end of the first on pulse, further, at the third time the measured GaN power device is turned off again, so that the single double-pulse test of the measured power device based on a single double-pulse test signal is completed, and it can be understood that through the above means, the switching conditions that the measured GaN power device may encounter can be truly simulated, so that the on-resistance of the measured GaN power device can be accurately detected.

[0069] As an example, the power loop provides a test current and a test voltage for the measured GaN power device, so that the measured GaN power device is in an initial test working condition.

[0070] In this embodiment, during the process of sending a plurality of double-pulse test signals to the double-pulse test circuit through the controller, first, the power loop is installed on the double-pulse test circuit, and the measured GaN power device is installed on the power loop, and then the power loop provides a test current and a test voltage for the measured GaN power device, so that the measured GaN power device is in an initial test working condition, so that the measured GaN power device can exhibit an ideal waveform during the double-pulse test, thereby laying a foundation for improving the accuracy of dynamic on-resistance detection of the power device.

[0071] In one embodiment, the host computer detects the on-resistance of the measured GaN power device based on a plurality of electrical test parameters, including:

[0072] The host computer determines the test resistance of the measured GaN power device under a plurality of double-pulse test signals based on a plurality of on-voltages and a plurality of on-currents, and detects the on-resistance of the measured GaN power device according to a plurality of test resistances.

[0073] It should be noted that after obtaining a plurality of on-voltages and a plurality of on-currents, the Ohm's law can be used to solve a plurality of test resistances, and then the on-resistance of the measured GaN power device is detected based on a plurality of test resistances, for example, in an implementable manner, the average value of a plurality of test resistances can be used as the on-resistance of the measured GaN power device.

[0074] As an example, the host computer determines the test resistance of the measured GaN power device under a plurality of double-pulse test signals based on a plurality of on-voltages and a plurality of on-currents, and detects the dynamic on-resistance degradation law of the measured GaN power device by fusing a plurality of test resistances.

[0075] In one embodiment, the power device dynamic on-resistance detection system further comprises a temperature control system, the temperature control system comprising a temperature controller, a thermocouple and a heating sheet, the temperature controller, the thermocouple, the heating sheet and the measured gallium nitride power device being connected in sequence; in the case that the test temperature of the measured gallium nitride power device meets the preset test condition, before the controller sends a plurality of double-pulse test signals to the double-pulse test circuit, the method further comprises:

[0076] The measured gallium nitride power device is heated by the heating sheet, and the real-time temperature of the measured gallium nitride power device is sent to the temperature controller by the thermocouple; in the case that the real-time temperature reaches the preset heating temperature is detected, if the heating duration for heating the measured gallium nitride power device is greater than or equal to the preset heating duration threshold, it is determined that the test temperature of the measured gallium nitride power device meets the preset test condition.

[0077] It should be noted that, in order to ensure that the measured gallium nitride power device can perform power device dynamic on-resistance detection in any environment, a temperature control system can also be deployed in the power device dynamic on-resistance detection system, wherein the temperature control system is connected with the measured gallium nitride power device through a test cable, and the temperature control system comprises a temperature controller, a thermocouple and a heating sheet, wherein the temperature controller can be a PID temperature controller, and the heating sheet can be a PTC heating sheet. During the double-pulse test of the measured gallium nitride power device, the temperature control system and the measured gallium nitride power device can be connected, the measured gallium nitride power device can be loaded on the test circuit board, and the heating temperature can be set. Then, the heating process of the measured gallium nitride power device is performed. After the heating temperature is reached, if the heating duration is greater than or equal to the preset heating duration threshold, it indicates that the heating plate can stably control the temperature, wherein the preset heating duration threshold can be 100s.

[0078] As an example, the measured gallium nitride power device is heated by the heating sheet, and the real-time temperature of the measured gallium nitride power device is sent to the temperature controller by the thermocouple; in the case that the real-time temperature reaches the preset heating temperature is detected, if the heating duration for heating the measured gallium nitride power device is greater than or equal to the preset heating duration threshold, it is determined that the test temperature of the measured gallium nitride power device meets the preset test condition.

[0079] In the embodiment, the temperature control system is arranged in the power device dynamic on-resistance detection system, the measured gallium nitride power device is heated by the heating sheet before the test process of the on-resistance starts, and the real-time temperature of the measured gallium nitride power device is sent to the temperature controller through the thermocouple, so that the test temperature of the measured gallium nitride power device meets the preset test condition when the real-time temperature is greater than the preset heating temperature threshold and the heating time of the measured gallium nitride power device is greater than the preset heating time threshold, that is, the influence of the on-resistance detection accuracy caused by the self-heating effect of the measured gallium nitride power device in any environment is avoided, so that the detection accuracy of the on-resistance of the measured gallium nitride power device is improved, and the detection limitation of the on-resistance of the measured gallium nitride power device is reduced at the same time.

[0080] In an implementable manner, referring to Figure 4 , Figure 4 is a whole schematic diagram of the power device dynamic on-resistance detection system, wherein 11 is an FPGA microcontroller, 12 is an auxiliary power supply, 13 is an oscilloscope, 14 is a power supply, 15 is a double-pulse test circuit, and the power device dynamic on-resistance detection system specifically includes a temperature control system, an oscilloscope, a high-voltage DC power supply, an auxiliary power supply, an FPGA microcontroller, a double-pulse test circuit, a load inductor, a control signal cable, a power supply cable, a test cable, and a test probe, etc., wherein the temperature control system is connected with the measured gallium nitride power device through the test cable, the measured gallium nitride power device is installed on the double-pulse test circuit, the oscilloscope is connected with the double-pulse test circuit through the test probe, the high-voltage DC power supply and the auxiliary power supply are connected with the double-pulse test circuit through the power supply cable, the FPGA microcontroller is connected with the double-pulse test circuit through the control signal cable, and the load inductor can be connected with the double-pulse test circuit by using a cold press terminal; the temperature control system mainly includes a PID temperature controller, a thermocouple, a PTC heating sheet, and a test cable, etc.; the thermocouple and the PTC heating sheet are directly connected with the measured gallium nitride power device, and the other end is connected with the PID temperature controller through the test cable, the heating sheet temperature is measured by the thermocouple and is fed back to the PID temperature controller in real time, and the PID temperature controller adjusts the heating power of the heating sheet through the test cable to achieve the temperature control effect; the double-pulse test circuit mainly includes a gate drive circuit, a clamping circuit, a gate off-state stress time control circuit, and a power loop, etc., and the specific detection process is as follows:

[0081] 1) According to the required on-state stress time conditions of the experiment, the corresponding Verilog HDL program is written and downloaded into the FPGA controller, and the FPGA controller is connected to the corresponding signal port of the double pulse test circuit through the control cable; 2) Connect the test probe to the oscilloscope and the double pulse test circuit respectively; 3) Connect one end of the other passive probe to the clamping voltage test point of the PCB board and the other end to the oscilloscope, test the on-state voltage drop of the device, and the grounding mode is also a grounding spring; 4) Install the load inductance with the corresponding inductance value for the double pulse test circuit; 5) Connect the auxiliary power supply and high voltage power supply to the test circuit board respectively; 6) Connect the temperature control system to the device under test, load the device under test on the test circuit board, set the experimental temperature, and then start heating the device under test. The heating process needs to last at least 100 s to ensure that the temperature of the device under test is stable. If the experimental temperature is room temperature, skip this step; 7) Turn on the auxiliary power supply and make sure the drive circuit is working properly before turning on the high voltage power supply. After the power supply is stable, trigger the FPGA control signal to perform multiple sets of double pulse dynamic on-state resistance test; 8) After the test is completed, first turn off the high voltage power supply, then turn off the auxiliary power supply, and save the data of each channel captured by the oscilloscope in turn; 9) According to the data saving format of the oscilloscope, write a MATLAB program through the upper computer to analyze and calculate the on-state resistance value of the measured gallium nitride power device.

[0082] The above power device dynamic on-resistance detection method can accurately control the off-state stress time, and the multiple sets of double-pulse test method proposed on this basis can ensure that the test results are not affected by the self-heating effect of the measured device, and provide more accurate dynamic on-resistance degradation data. The system can apply heat stress to the measured device while testing the dynamic on-resistance, without affecting other elements on the double-pulse test circuit. The system is compatible with SG-HEMT, HD-GIT and other gallium nitride measured gallium nitride power devices, has wide applicability, and can support the reliability design of gallium nitride measured gallium nitride power devices. At the same time, in the process of detecting the on-resistance of the measured gallium nitride power device, the relationship between the test temperature of the measured gallium nitride power device and the preset test condition is set, so as to control the off-state stress time and suppress the self-heating effect of the measured gallium nitride power device, and the purpose of controllably applying electrical stress and thermal stress to the measured gallium nitride power device is achieved to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the gallium nitride power device, rather than just detecting through the traditional on-resistance detection method. Therefore, since the measured gallium nitride power device will generate self-heating during continuous switching, and the on-resistance of the measured gallium nitride power device will be affected by internal charge trapping, hot electron effect, etc., there is a dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the measured gallium nitride power device, which makes it easy to occur that the power device dynamic on-resistance detection cannot reflect the actual working condition value, so the detection accuracy of the power device dynamic on-resistance detection is improved.

[0083] It should be understood that, although each step in the flowchart involved in each of the above embodiments is shown in sequence according to the arrow, these steps are not necessarily executed in sequence according to the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and these steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in each of the above embodiments can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of these steps or stages is not necessarily sequential, but can be alternately or alternately executed with at least part of other steps or steps or stages in other steps.

[0084] Based on the same inventive concept, the application further provides a power device dynamic on-resistance detection system for implementing the power device dynamic on-resistance detection method described above. The implementation scheme of the device for solving the problem is similar to the implementation scheme described in the above method, so the specific limitations in one or more power device dynamic on-resistance detection system embodiments provided below can be referred to the limitations of the power device dynamic on-resistance detection method described above, which will not be repeated here.

[0085] In one exemplary embodiment, as shown in Figure 5 A power device dynamic on-resistance detection system is provided, which includes a host computer 401, a controller 402, a double-pulse test circuit 403, and a signal collector 404, wherein the double-pulse test circuit is installed with a measured gallium nitride power device;

[0086] The controller 402 is configured to send a plurality of groups of double-pulse test signals to the double-pulse test circuit if the test temperature of the measured gallium nitride power device meets a preset test condition, wherein the plurality of groups of double-pulse test signals are used to generate different off-state stress times.

[0087] The signal collector 404 is configured to collect a plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals.

[0088] The host computer 401 is configured to detect the on-resistance of the measured gallium nitride power device based on the plurality of groups of electrical test parameters.

[0089] In one embodiment, the double-pulse test circuit includes a gate drive circuit and a current drive circuit, and the power device dynamic on-resistance detection system further includes an auxiliary power supply configured to provide power for the gate drive circuit and the current drive circuit, respectively. The plurality of groups of electrical test parameters include a plurality of groups of on-voltage and a plurality of groups of on-current. The signal collector 404 is further configured to:

[0090] According to the plurality of groups of double-pulse test signals, the signal collector collects the on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit; and according to the plurality of groups of double-pulse test signals, the signal collector collects the on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit.

[0091] In one embodiment, the double-pulse test circuit further includes a clamping circuit, and the auxiliary power supply is further configured to provide power for the clamping circuit. The power device dynamic on-resistance detection system is further configured to:

[0092] In the process of collecting the multiple sets of electrical test parameters by the signal collector, the multiple sets of double-pulse test signals are clamped by the clamping circuit.

[0093] In one of the embodiments, the double-pulse test circuit further comprises a power circuit, and the measured GaN power device is installed on the power circuit; the controller 402 is further configured to:

[0094] The power circuit provides test current and test voltage for the measured GaN power device, so that the measured GaN power device is in an initial test working condition.

[0095] In one of the embodiments, the power device dynamic on-resistance detection system is further configured to:

[0096] The host computer determines test resistances of the measured GaN power device under the multiple sets of double-pulse test signals based on the multiple sets of on-voltages and the multiple sets of on-currents, and detects the on-resistance of the measured GaN power device according to the multiple sets of test resistances.

[0097] In one of the embodiments, the power device dynamic on-resistance detection system further comprises a temperature control system, and the temperature control system comprises a temperature controller, a thermocouple and a heating sheet, and the temperature controller, the thermocouple, the heating sheet and the measured GaN power device are connected in sequence; the power device dynamic on-resistance detection system is further configured to:

[0098] The heating sheet heats the measured GaN power device, and the thermocouple sends real-time temperature of the measured GaN power device to the temperature controller; in the case that the real-time temperature reaches a preset heating temperature, if a heating duration for heating the measured GaN power device is greater than or equal to a preset heating duration threshold, it is determined that a test temperature of the measured GaN power device meets a preset test condition.

[0099] Each module in the power device dynamic on-resistance detection system described above can be realized by software, hardware and a combination thereof in whole or in part. Each module described above can be embedded in or independent of a processor in a computer device in hardware form, or can be stored in a memory in a computer device in software form, so as to be called and executed by a processor to perform operations corresponding to each module.

[0100] In one exemplary embodiment, a computer device, which can be a terminal, is provided, and an internal structure diagram of the computer device can be as shown in Figure 6As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. Among them, the processor, the memory and the input / output interface are connected through the system bus, the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capability. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The input / output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used to communicate with the external terminal in a wired or wireless manner. The wireless manner can be realized through WIFI, mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by the processor to realize a kind of power device dynamic on-resistance detection method. Those skilled in the art can understand, Figure 6 The structure shown in the figure is only the block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0101] In one embodiment, a computer device is also provided, including a memory and a processor, the memory stores a computer program, and the processor executes the computer program to realize the steps in each of the above method embodiments.

[0102] In one embodiment, a computer readable storage medium is provided, which stores a computer program, and the computer program is executed by a processor to realize the steps in each of the above method embodiments.

[0103] In one embodiment, a computer program product is provided, including a computer program, and the computer program is executed by a processor to realize the steps in each of the above method embodiments.

[0104] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided in the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided in the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0105] Any combination of the technical features of the above embodiments can be made. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combination of the technical features does not exist, it should be considered as the scope of the present application.

[0106] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent of the present application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A method for detecting dynamic on-resistance of a power device, characterized in that, The application is applied to a power device dynamic on-resistance detection system, the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector, wherein the double-pulse test circuit is installed with a measured gallium nitride power device; the method comprises: In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, a plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, wherein the plurality of groups of double-pulse test signals are used for generating different off-state stress times; A plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector; The on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer, wherein the double-pulse test circuit comprises a gate drive circuit and a current drive circuit, the power device dynamic on-resistance detection system further comprises an auxiliary power supply, the auxiliary power supply is used for providing power supply for the gate drive circuit and the current drive circuit respectively, the gate drive circuit is in a high-frequency switching environment, the plurality of groups of electrical test parameters comprise a plurality of groups of on-voltages and a plurality of groups of on-currents; the plurality of groups of electrical test parameters of the measured gallium nitride power device under the plurality of groups of double-pulse test signals are collected through the signal collector, comprising: The on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit is collected through the signal collector by sequentially applying a plurality of groups of double-pulse test signals to the measured gallium nitride power device; The on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit is collected through the signal collector by sequentially applying a plurality of groups of double-pulse test signals to the measured gallium nitride power device, wherein the double-pulse test circuit further comprises a power loop, the measured gallium nitride power device is installed in the power loop, and the power loop is used for simulating the switching conditions encountered by the measured gallium nitride power device; before the plurality of groups of double-pulse test signals are sent to the double-pulse test circuit through the controller, the method further comprises: Test current and test voltage are provided for the measured gallium nitride power device through the power loop, so that the measured gallium nitride power device is in an initial test working condition.

2. The method of claim 1, wherein, The double-pulse test circuit further comprises a clamping circuit, and the auxiliary power supply is further used for providing power supply for the clamping circuit; the method further comprises: During the process of collecting the plurality of groups of electrical test parameters through the signal collector, the plurality of groups of double-pulse test signals are clamped through the clamping circuit.

3. The method of claim 1, wherein, The on-resistance of the measured gallium nitride power device is detected based on the plurality of groups of electrical test parameters through the upper computer, comprising: The test resistance of the measured gallium nitride power device under the plurality of groups of double-pulse test signals is determined based on the plurality of groups of on-voltages and the plurality of groups of on-currents through the upper computer; The on-resistance of the measured gallium nitride power device is detected according to a plurality of groups of test resistances.

4. The method of claim 1, wherein, The power device dynamic on-resistance detection system further comprises a temperature control system, the temperature control system comprising a temperature controller, a thermocouple and a heating sheet, the temperature controller, the thermocouple, the heating sheet and the measured gallium nitride power device being connected in sequence; In the case that the test temperature of the measured gallium nitride power device meets the preset test condition, before the controller sends a plurality of double-pulse test signals to the double-pulse test circuit, the method further comprises: heating the measured gallium nitride power device by the heating sheet, and sending the real-time temperature of the measured gallium nitride power device to the temperature controller by the thermocouple; In the case that the real-time temperature reaches the preset heating temperature, if the heating duration for heating the measured gallium nitride power device is greater than or equal to the preset heating duration threshold, it is determined that the test temperature of the measured gallium nitride power device meets the preset test condition.

5. A power device dynamic on-resistance detection system, the power device dynamic on-resistance detection system comprising a host computer, a controller, a double-pulse test circuit and a signal collector, wherein, The double-pulse test circuit is installed with a measured gallium nitride power device; The controller is configured to send a plurality of double-pulse test signals to the double-pulse test circuit in the case that the test temperature of the measured gallium nitride power device meets the preset test condition, wherein the plurality of double-pulse test signals are used to generate different off-state stress times. The signal collector is configured to collect a plurality of electrical test parameters of the measured gallium nitride power device under the plurality of double-pulse test signals. The upper computer is configured to detect the on-resistance of the measured gallium nitride power device based on the plurality of electrical test parameters, wherein the double-pulse test circuit comprises a gate drive circuit and a current drive circuit, the power device dynamic on-resistance detection system further comprises an auxiliary power supply, the auxiliary power supply is configured to provide power supply for the gate drive circuit and the current drive circuit respectively, the gate drive circuit is in a high-frequency switching environment, the plurality of electrical test parameters comprise a plurality of on-voltages and a plurality of on-currents; the signal collector is further configured to collect the on-current of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by sequentially applying a plurality of double-pulse test signals to the measured gallium nitride power device; and collect the on-voltage of the measured gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by sequentially applying a plurality of double-pulse test signals to the measured gallium nitride power device; wherein the double-pulse test circuit further comprises a power loop, the measured gallium nitride power device is installed in the power loop, and the power loop is configured to simulate the switching conditions encountered by the measured gallium nitride power device; and the controller is further configured to provide test current and test voltage for the measured gallium nitride power device through the power loop, so that the measured gallium nitride power device is in an initial test working condition.

6. The system of claim 5, wherein, The double-pulse test circuit further comprises a clamping circuit, and the auxiliary power supply is further configured to provide power supply for the clamping circuit; and the power device dynamic on-resistance detection system is further configured to: In the process of collecting the multiple sets of electrical test parameters by the signal collector, the multiple sets of double-pulse test signals are clamped by the clamping circuit.

7. The system of claim 5, wherein, The power device dynamic on-resistance detection system is also used for: The host computer determines the test resistances of the measured gallium nitride power device under the multiple sets of double-pulse test signals based on the multiple sets of on-voltages and the multiple sets of on-currents, and detects the on-resistance of the measured gallium nitride power device according to the multiple sets of test resistances.

8. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that, The processor executes the computer program to implement the steps of the method in any one of claims 1 to 4.

9. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 4.

10. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 4.

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