Deposition medium AR film and coating film preparation method thereof

Abstract

The invention provides a deposition medium AR (anti-reflection) film and a coating preparation method thereof, and the deposition medium AR film comprises the following structure: an aluminum oxide film layer with the thickness of 1-3 nm, a silicon dioxide film layer with the thickness of 2-6 nm, a silicon-aluminum mixed layer with the thickness of 30-47 nm, a priming layer with the thickness of 1-4 nm, and an upper coating layer and a lower coating layer with the thickness of 2-4 nm. According to the present invention, the transmittance of the AR film is improved while the weather resistance of the AR film can be improved, the AF film material is deposited on the surface of the AR film so as to obtain the AR film with characteristics of high surface hardness and excellent friction resistance, and the SiO2 film layer is plated on the AR substrate so as to easily improve the antibacterial anti-fingerprint ability of the whole AR film.

Description

Technical Field

[0001] The present invention relates to the field of AR coating, in particular to a deposition medium AR film and a coating preparation method thereof. Background Art

[0002] AR film, the full name of which is anti-reflection film, also called anti-reflection film, is an optical film that can reduce or eliminate the reflected light on the optical surface. It is a high-transmittance optical film that can greatly increase the light transmittance of the filter. In the manufacturing process of prisms and plane mirrors, AR film can effectively reduce the reflected light on the surface of optical components by coating them, allowing more light to pass through these components, improving the utilization rate and transmittance of light, and ultimately presenting users with a clearer and brighter visual experience;

[0003] The working principle of AR film is mainly based on the principle of light interference. By coating one or more layers of thin films with different refractive indices on the surface of the optical element, the light waves reflected by the incident light on the front and back surfaces of the film interfere with each other, thereby effectively reducing the reflected light and increasing the amount of light transmittance. AR film is widely used in display device protection screens, such as LCD TVs, laptops, desktop computer displays, etc., as well as high-end instrument panels, touch screens and other electronic products. By applying AR film, the reflection and glare problems of these electronic products under ambient light sources are significantly improved, making the contrast stronger and the scene image clearer;

[0004] The production process of AR film mainly includes the deposition and polishing of thin film. By depositing specific materials on a transparent substrate in a certain way, a thin film with specific optical properties is formed. However, the existing AR protective film has poor wear resistance. For example, after using AR coated electronic products for a period of time, the screen begins to become rough and the resistance becomes larger. This is due to the poor wear resistance of the product surface (AR protective film). What's more, as the protective film wears away, some functions of the electronic product surface will gradually disappear, affecting the customer's experience. Summary of the invention

[0005] 1. Technical issues to be solved

[0006] In view of the deficiencies of the prior art, the present invention provides a deposited medium AR film and a coating preparation method thereof, which solves the problem of how the existing AR film can improve its wear resistance while having excellent optical properties.

[0007] (II) Technical solution

[0008] To achieve the above objectives, the present invention is implemented through the following technical scheme: a deposited medium AR film, including the following structural components: an aluminum oxide film layer of 1-3nm, a silicon dioxide film layer of 2-6nm, a silicon-aluminum mixed layer of 30-47nm, a base layer of 1-4nm, and upper and lower coatings of 2-4nm.

[0009] A method for preparing a deposited medium AR film, comprising the following steps:

[0010] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0011] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0012] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0013] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0014] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0015] S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer;

[0016] S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film;

[0017] S8, subjecting the substrate containing the AR film and the AF film to a hot pressing treatment in the AF chamber; the conditions of the hot pressing treatment at least include: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, that is, the coating operation of the AR film is completed.

[0018] Preferably, the cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0019] Preferably, the temperature of the oven in S6 is 100-130° C., and the drying time is 25-55 min.

[0020] Preferably, the amount of the AF film material in S7 is such that the average thickness of the AF film is 13-28 nm.

[0021] Preferably, the base layer material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0022] (III) Beneficial effects

[0023] The present invention provides a deposition medium AR film and a coating preparation method thereof, which has the following beneficial effects:

[0024] 1. The present invention forms an anti-reflection layer by arranging an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer, which can improve the transmittance of the AR film while also improving the weather resistance of the AR film. At the same time, an AF film material is deposited on the surface of the AR film to obtain an AR film with high surface hardness and excellent friction resistance. A SiO2 film layer is plated on the AR substrate, which helps to improve the antibacterial and anti-fingerprint capabilities of the entire AR film. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] Embodiment 1:

[0027] An embodiment of the present invention provides a deposited medium AR film, comprising the following structural components: an aluminum oxide film layer of 1 nm, a silicon dioxide film layer of 2 nm, a silicon-aluminum mixed layer of 30 nm, a base layer of 1 nm, and upper and lower coating layers of 2 nm.

[0028] A method for preparing a deposited medium AR film, comprising the following steps:

[0029] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0030] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0031] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0032] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0033] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0034] S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer;

[0035] S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film;

[0036] S8. The substrate containing the AR film and the AF film is subjected to hot pressing treatment in the AF chamber; the conditions of the hot pressing treatment include at least: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, thus completing the coating operation of the AR film.

[0037] The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0038] The temperature of the oven in S6 is 100-130°C, and the drying time is 25-55 minutes.

[0039] The amount of AF film material used in S7 is such that the average thickness of the AF film is 13-28 nm.

[0040] The base material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0041] Embodiment 2:

[0042] An embodiment of the present invention provides a deposited medium AR film, comprising the following structural components: an aluminum oxide film layer of 2nm, a silicon dioxide film layer of 4nm, a silicon-aluminum mixed layer of 37nm, a base layer of 2nm, and upper and lower coating layers of 3nm.

[0043] A method for preparing a deposited medium AR film, comprising the following steps:

[0044] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0045] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0046] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0047] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0048] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0049] S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer;

[0050] S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film;

[0051] S8. The substrate containing the AR film and the AF film is subjected to hot pressing treatment in the AF chamber; the conditions of the hot pressing treatment include at least: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, thus completing the coating operation of the AR film.

[0052] The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0053] The temperature of the oven in S6 is 100-130°C, and the drying time is 25-55 minutes.

[0054] The amount of AF film material used in S7 is such that the average thickness of the AF film is 13-28 nm.

[0055] The base material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0056] Embodiment 3:

[0057] An embodiment of the present invention provides a deposited medium AR film, comprising the following structural components: an aluminum oxide film layer of 3nm, a silicon dioxide film layer of 6nm, a silicon-aluminum mixed layer of 47nm, a base layer of 4nm, and upper and lower coating layers of 4nm.

[0058] A method for preparing a deposited medium AR film, comprising the following steps:

[0059] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0060] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0061] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0062] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0063] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0064] S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer;

[0065] S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film;

[0066] S8. The substrate containing the AR film and the AF film is subjected to hot pressing treatment in the AF chamber; the conditions of the hot pressing treatment include at least: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, thus completing the coating operation of the AR film.

[0067] The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0068] The temperature of the oven in S6 is 100-130°C, and the drying time is 25-55 minutes.

[0069] The amount of AF film material used in S7 is such that the average thickness of the AF film is 13-28 nm.

[0070] The base material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0071] Comparative Example 1:

[0072] The embodiment of the present invention provides a deposited medium AR film, comprising the following structural components: an aluminum oxide film layer 1, a silicon dioxide film layer 2, a base layer 1nm, and upper and lower coating layers 2nm.

[0073] A method for preparing a deposited medium AR film, comprising the following steps:

[0074] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0075] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0076] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0077] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0078] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0079] S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer;

[0080] S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film;

[0081] S8. The substrate containing the AR film and the AF film is subjected to hot pressing treatment in the AF chamber; the conditions of the hot pressing treatment include at least: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, thus completing the coating operation of the AR film.

[0082] The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0083] The temperature of the oven in S6 is 100-130°C, and the drying time is 25-55 minutes.

[0084] The amount of AF film material used in S7 is such that the average thickness of the AF film is 13-28 nm.

[0085] The base material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0086] Comparative Example 2:

[0087] The embodiment of the present invention provides a deposition medium AR film, which includes the following structural components: an aluminum oxide film layer of 1nm, a silicon-aluminum mixed layer of 30nm, a base layer of 1nm, and upper and lower coating layers of 2nm.

[0088] A method for preparing a deposited medium AR film, comprising the following steps:

[0089] S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas;

[0090] S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings;

[0091] S3, coating a base layer on the upper coating layer by magnetron sputtering process;

[0092] S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film;

[0093] S5, placing the substrate containing the AR film on a coating machine, and coating a layer of SiO2 film base on the substrate containing the AR film by vacuum coating;

[0094] S6. Add nanosilver to the anti-fingerprint agent, and evenly spray the treated anti-fingerprint agent onto the SiO2 film base layer on the surface of the AR film substrate by a sprayer, and then place the sprayed AR substrate in an oven for drying, take it out and let it stand and cool to room temperature, so as to form an antibacterial anti-fingerprint layer on the surface of the SiO2 film base layer.

[0095] The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

[0096] The temperature of the oven in S6 is 100-130°C, and the drying time is 25-55 minutes.

[0097] The amount of AF film material used in S7 is such that the average thickness of the AF film is 13-28 nm.

[0098] The base material is selected from one of SiO, Ti, Si, Al, MgF, SiO, Sn and Y.

[0099] Test example:

[0100] The AR films prepared in Examples 1-3 and Comparative Examples 1-2 were subjected to the following performance tests, and the specific test results are as follows:

[0101] (1) Friction resistance test: The transparent film to be tested was placed on a friction resistance tester (model DZ-8103), and rubbed back and forth 3000 times at a speed of 0.2 m / s using a standard test eraser #7017R under a load of 500 g. The average transmittance of the transparent film before and after friction was tested, and the friction resistance of the film layer was qualitatively analyzed;

[0102] (2) Using an ultraviolet spectrophotometer (model: UV-3100PC) to test the transmittance spectrum of the transparent film (wavelength detection range: 400-800 nm);

[0103]

[0104] It can be seen from the results in the above table that the transmittance of the AR films prepared in Examples 1-3 decreases very little before and after friction, while the lack of the silicon-aluminum mixture in Comparative Example 1 and the lack of the silicon dioxide film layer and the AF film layer in Comparative Example 2 make the friction effect of the entire AR film significantly worse. Therefore, the AR film prepared by the present invention has good friction resistance.

[0105] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A deposited medium AR film, characterized in that: The structure includes the following components: The aluminum oxide film layer is 1-3nm, the silicon dioxide film layer is 2-6nm, the silicon-aluminum mixed layer is 30-47nm, the base layer is 1-4nm, and the upper and lower coating layers are 2-4nm.

2. A method for preparing a deposited medium AR film, characterized in that: The following steps are involved: S1. Ultrasonic cleaning of the glass substrate is performed using a solvent or a cleaning agent, and then the glass substrate is rinsed with deionized water for 3-5 times. After the rinsing is completed, the glass substrate is blown dry with nitrogen gas; S2, select a suitable PET protective film and apply epoxy ester coating liquid on its upper and lower surfaces to form upper and lower coatings; S3, coating a base layer on the upper coating layer by magnetron sputtering process; S4, sequentially coating an aluminum oxide film layer, a silicon dioxide film layer and a silicon-aluminum mixed layer on the surface of the base layer by a magnetron sputtering process, wherein the silicon dioxide film layer and the silicon-aluminum mixed layer are sputtered by using a silicon-aluminum target, to obtain a substrate containing an AR film; S5, placing the substrate containing the AR film on a coating machine, and coating a SiO2 film base layer on the substrate containing the AR film by vacuum coating; S6, adding nanosilver to the anti-fingerprint agent, spraying the treated anti-fingerprint agent evenly onto the SiO2 film base on the surface of the AR film substrate by a sprayer, and then placing the sprayed AR substrate in an oven for drying, taking it out and letting it stand to cool to room temperature, thereby forming an antibacterial anti-fingerprint layer on the surface of the SiO2 film base; S7, introducing the substrate containing the AR film into the AF chamber containing the AF film material, and depositing the AF film material on the surface of the AR film to obtain a substrate containing the AR film and the AF film; S8. The substrate containing the AR film and the AF film is subjected to a hot pressing treatment in an AF chamber. The conditions of the hot pressing treatment include at least: vacuum degree +5x10-Pa, temperature of 140-160°C, and time of 5-8min, thereby completing the coating operation of the AR film.

3. The method for preparing a deposited medium AR film according to claim 2, characterized in that: The cleaning agent used in S1 is sulfuric acid, hydrogen peroxide or a mixed cleaning agent of hydrochloric acid and hydrogen peroxide, and the ethanol solution is ultrasonically treated for 10-20 minutes.

4. The method for preparing a deposited medium AR film according to claim 2, characterized in that: The temperature of the oven in S6 is 100-130° C., and the drying time is 25-55 min.

5. The method for preparing a deposited medium AR film according to claim 2, characterized in that: The amount of the AF film material in S7 is such that the average thickness of the AF film is 13-28 nm.

6. The method for preparing a deposited medium AR film according to claim 1, characterized in that: The base material is selected from one of SiO2, Ti, Si, Al, MgF, SiO2, Sn and Y.

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