Sampling frequency adjusting method, storage system and electronic equipment

Abstract

The invention provides a sampling frequency adjusting method, a storage system and electronic equipment, and relates to the technical field of semiconductor chips. The method comprises the following steps: acquiring a thermal sampling influence factor of target equipment, and adjusting the sampling frequency of a thermal protection module corresponding to the target equipment according to the thermal sampling influence factor. The problem that the sampling frequency of the thermal protection module corresponding to the key system component in the solid state disk cannot be effectively adjusted is solved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor chip technology, and in particular to a sampling frequency adjustment method, a storage system and an electronic device. Background Art

[0002] As bus speeds increase, the read and write performance of solid-state drives (SSDs) has also been significantly improved. When a solid-state drive responds to a large number of IO requests, the temperature of its key system components will rise significantly. The significant increase in temperature will put a huge test on the hardware life of key system components in the solid-state drive, as well as the integrity and security of the stored data. Summary of the invention

[0003] The embodiments of the present disclosure provide a sampling frequency adjustment method, a storage system, and an electronic device, which are intended to solve the problem that the sampling frequency of a thermal protection module corresponding to a key system component in a solid-state hard disk cannot be effectively adjusted.

[0004] To achieve the above objectives, the embodiments of the present disclosure adopt the following technical solutions:

[0005] In a first aspect, a sampling frequency adjustment method is provided, comprising: obtaining a thermal sampling influencing factor of a target device, and adjusting a sampling frequency of a thermal protection module corresponding to the target device according to the thermal sampling influencing factor.

[0006] The sampling frequency adjustment method provided by the present disclosure can automatically adjust the sampling frequency of the thermal protection module according to the thermal sampling influencing factors of the target device. In this way, when the solid-state drive responds to a large number of IO requests, it can dynamically optimize temperature monitoring and protection, thereby more effectively maintaining the stability of the system. Secondly, by adjusting the sampling frequency through the thermal sampling influencing factors, the temperature changes inside the solid-state drive can be more accurately monitored and responded to, which helps to reduce the potential impact of high temperature on the solid-state drive and reduce the possibility of data damage and data loss.

[0007] In some embodiments, the thermal sampling influencing factors include the temperature of the target device and the influencing factors of at least one dimension. According to the thermal sampling influencing factors, adjusting the sampling frequency of the thermal protection module corresponding to the target device includes: determining the basic sampling frequency according to the temperature of the target device, determining the sampling frequency adjustment amount according to the influencing factors of at least one dimension, and adjusting the sampling frequency of the thermal protection module corresponding to the target device to the target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

[0008] The sampling frequency adjustment method provided by the present invention determines the basic sampling frequency of the thermal protection module based on the temperature of the target device, and determines the sampling frequency adjustment amount of the thermal protection module based on the influencing factor, thereby achieving more accurate and reliable adjustment of the sampling frequency, thereby improving the response speed and response accuracy of the thermal protection module.

[0009] In some embodiments, a basic sampling frequency is determined based on the temperature of a target device, including: when the temperature of the target device is in a first temperature range, the basic sampling frequency is determined to be a first sampling frequency; when the temperature of the target device is in a second temperature range, the basic sampling frequency is determined to be a second sampling frequency, wherein the temperature in the first temperature range is lower than the temperature in the second temperature range, and the first sampling frequency is lower than the second sampling frequency.

[0010] The sampling frequency adjustment method provided by the present invention is that since the target device is easily affected when operating under high temperature conditions, such as possible failure or data corruption, the thermal protection module can increase the sampling frequency under high temperature conditions. By increasing the sampling frequency, it can ensure that temperature changes are detected in a timely manner, and potential high temperature problems can be more sensitively perceived, thereby having the opportunity to take necessary measures to reduce the risk of failure of the target device.

[0011] In some embodiments, the sampling frequency adjustment amount is determined based on the influencing factor of at least one dimension, including: obtaining a first adjustment amount for each dimension based on the influencing factor of each dimension in at least one dimension, and determining the sampling frequency adjustment amount based on the first adjustment amount for each dimension and the weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in at least one dimension and the corresponding weight coefficient.

[0012] In some embodiments, the target device includes a storage controller and a memory, wherein the influencing factors of the storage controller include a temperature change rate, and the influencing factors of the memory include a temperature change rate, a first position parameter, a second position parameter, the number of program / erase cycles, the number of bad blocks, and the type of stored data.

[0013] In some embodiments, the first position parameter is used to characterize the relative distance between the memory and the storage controller, and the second position parameter is used to characterize the relative distance between the memory and a high temperature area in the electronic device.

[0014] In some embodiments, a first adjustment amount for each dimension is obtained according to an influence factor of each dimension, including: when the temperature change rate increases, the first adjustment amount corresponding to the temperature change rate is increased.

[0015] In some embodiments, obtaining the first adjustment amount of each dimension according to the influence factor of each dimension further includes: when the first position parameter decreases, increasing the first adjustment amount corresponding to the first position parameter.

[0016] In some embodiments, obtaining a first adjustment amount for each dimension according to an influence factor of each dimension further includes: when the second position parameter decreases, increasing the first adjustment amount corresponding to the second position parameter.

[0017] In some embodiments, obtaining a first adjustment amount for each dimension according to an influencing factor of each dimension further includes: when the number of programming / erasing cycles increases, increasing the first adjustment amount corresponding to the number of programming / erasing cycles.

[0018] In some embodiments, obtaining a first adjustment amount for each dimension according to an influence factor of each dimension further includes: when the number of bad blocks increases, increasing the first adjustment amount corresponding to the number of bad blocks.

[0019] In some embodiments, obtaining a first adjustment amount for each dimension according to an influence factor of each dimension further includes: when the type of the stored data is hot data, increasing the first adjustment amount corresponding to the type of the stored data.

[0020] In a second aspect, a storage system is provided, including: a memory and a storage controller; the storage controller is coupled to the memory, and the storage controller is configured to: obtain a thermal sampling influencing factor of a target device, and adjust a sampling frequency of a thermal protection module corresponding to the target device according to the thermal sampling influencing factor.

[0021] In some embodiments, the thermal sampling influencing factors include the temperature of the target device and the influencing factors of at least one dimension. The storage controller is specifically configured to: determine the basic sampling frequency according to the temperature of the target device, determine the sampling frequency adjustment amount according to the influencing factors of at least one dimension, and adjust the sampling frequency of the thermal protection module corresponding to the target device to the target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

[0022] In some embodiments, the storage controller is specifically configured to: when the temperature of the target device is in a first temperature range, determine the basic sampling frequency as a first sampling frequency; when the temperature of the target device is in a second temperature range, determine the basic sampling frequency as a second sampling frequency, wherein the temperature of the first temperature range is lower than the temperature of the second temperature range, and the first sampling frequency is lower than the second sampling frequency.

[0023] In some embodiments, the storage controller is specifically configured to: obtain a first adjustment amount for each dimension based on an influencing factor of each dimension in at least one dimension, and determine a sampling frequency adjustment amount based on the first adjustment amount for each dimension and a weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in at least one dimension and the corresponding weight coefficient.

[0024] In some embodiments, the target device includes a storage controller and a memory, wherein the influencing factors of the storage controller include a temperature change rate, and the influencing factors of the memory include a temperature change rate, a first position parameter, a second position parameter, the number of program / erase cycles, the number of bad blocks, and the hot / cold degree type of the stored data.

[0025] In some embodiments, the first position parameter is used to characterize the relative distance between the memory and the storage controller, and the second position parameter is used to characterize the relative distance between the memory and a high temperature area in the electronic device.

[0026] In some embodiments, the storage controller is specifically configured to increase a first adjustment amount corresponding to the temperature change rate when the temperature change rate increases.

[0027] In some embodiments, the storage controller is further specifically configured to: when the first position parameter decreases, increase a first adjustment amount corresponding to the first position parameter.

[0028] In some embodiments, the storage controller is further specifically configured to: when the second position parameter decreases, increase the first adjustment amount corresponding to the second position parameter.

[0029] In some embodiments, the storage controller is further specifically configured to: when the number of program / erase cycles increases, increase a first adjustment amount corresponding to the number of program / erase cycles.

[0030] In some embodiments, the storage controller is further specifically configured to: when the number of bad blocks increases, increase a first adjustment amount corresponding to the number of bad blocks.

[0031] In some embodiments, the storage controller is further specifically configured to: when the stored data is hot data, increase a first adjustment amount corresponding to an influencing factor of the hotness or coldness type of the stored data.

[0032] In a third aspect, an electronic device is provided, comprising a host and a storage system as described in any one of the second aspects above, wherein the host is connected to the storage system to write data to the storage system or read data stored in the storage system.

[0033] In a fourth aspect, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer-executable instructions; after the computer-executable instructions are executed, any one of the methods in the first aspect above can be implemented.

[0034] It can be understood that the technical effects of the second to fourth aspects refer to the technical effects of the first aspect and any embodiment thereof, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram of an electronic device provided for an embodiment of the present disclosure;

[0036] Figure 2 A schematic diagram of a storage system provided for an embodiment of the present disclosure;

[0037] Figure 3 A schematic diagram of another storage system provided for an embodiment of the present disclosure;

[0038] Figure 4 It is a flow chart of the sampling frequency adjustment method disclosed in the present invention;

[0039] Figure 5 A schematic flow chart of another sampling frequency adjustment method disclosed in the present invention;

[0040] Figure 6 A schematic flow chart of another sampling frequency adjustment method disclosed in the present invention;

[0041] Figure 7 It is a schematic diagram of the corresponding relationship between temperature and basic sampling frequency disclosed in the present invention;

[0042] Figure 8 A schematic flow chart of another sampling frequency adjustment method disclosed in the present invention;

[0043] Fig. 9 A schematic diagram of a corresponding relationship between an influencing factor and a first adjustment amount disclosed in the present invention;

[0044] Fig.10 is a schematic diagram of the corresponding relationship between another influencing factor and the first adjustment amount disclosed in the present invention;

[0045] Fig.11 is a schematic diagram of the corresponding relationship between another influencing factor and the first adjustment amount disclosed in the present invention;

[0046] Fig.12 is a schematic diagram of the corresponding relationship between another influencing factor and the first adjustment amount disclosed in the present invention;

[0047] Fig.13 is a schematic diagram of the corresponding relationship between another influencing factor and the first adjustment amount disclosed in the present invention;

[0048] Fig.14 It is a schematic diagram of the corresponding relationship between another influencing factor and the first adjustment amount disclosed in the present invention. DETAILED DESCRIPTION

[0049] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0050] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0051] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0052] When describing some embodiments, the term "coupled" and its derivative expressions may be used. For example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. In this case, "coupled" may also be described as "connected". In addition, the term "coupled" may also refer to two or more components that are not in direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0053] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0054] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B. The use of "suitable for" or "configured to" herein is meant to be open and inclusive language, which does not exclude devices that are suitable for or configured to perform additional tasks or steps. In addition, the use of "based on" is meant to be open and inclusive, because a process, step, calculation or other action "based on" one or more conditions or values ​​can be based on additional conditions or beyond values ​​in practice.

[0055] The use of "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0056] The embodiments of the present disclosure provide an electronic device, which may be any one of a mobile phone, a desktop computer, a tablet computer, a laptop computer, a server, a vehicle-mounted device, a wearable device (such as a smart watch, a smart bracelet, smart glasses, etc.), a mobile power supply, a game console, a digital multimedia player, etc. Figure 1 , Figure 1 A schematic diagram of an electronic device 10 provided by an embodiment of the present disclosure is shown, including a host 100 and a storage system 110. The host 100 is coupled to the storage system 110 to write data to the storage system 110 or read data stored in the storage system 110. The host is also called a master device, and the storage system is also called a slave device. In an electronic device, a slave device can be accessed by different master devices. For example, taking the electronic device as a mobile phone as an example, the central processing unit (CPU) and digital signal processor (DSP) of the mobile phone can all access the storage system as a host.

[0057] For example, see Figure 2 , Figure 2 A schematic diagram of a storage system 110 provided in an embodiment of the present disclosure is shown, the storage system 110 includes a storage controller 111 and a memory 112, the storage controller 111 is coupled to the memory 112 to control the memory 112 to store data. The memory 112 may be a two-dimensional (2-dimension, 2D) memory or a three-dimensional (3-dimension, 3D) memory.

[0058] The storage system 110 may be integrated into various types of storage devices, for example, included in the same package (e.g., a universal flash storage (UFS) package or an embedded multimedia card (eMMC) package). That is, the storage system 110 may be applied to and packaged into different types of electronic products, for example, mobile phones (e.g., cell phones), desktop computers, tablet computers, laptop computers, servers, in-vehicle devices, game consoles, printers, positioning devices, wearable devices, smart sensors, mobile power supplies, virtual reality (VR) devices, augmented reality (AR) devices, or any other suitable electronic devices having storage therein.

[0059] In some embodiments, the storage system 110 includes a storage controller 111 and a memory 112, and the storage system 110 can be integrated into a memory card. The memory card includes any one of a personal computer memory card international association (PCMCIA) card (abbreviated as PC card), a compact flash (CF) card, a smart media (SM) card, a memory stick, a multimedia card (MMC), a secure digital memory card (SD) card, and a UFS.

[0060] In other embodiments, see Figure 3 The storage system 110 includes a storage controller 111, a first memory 1121, and a second memory 1122. The storage system 110 is integrated into a solid state drive (SSD).

[0061] In the storage system 110, in some embodiments, the storage controller 111 is configured to operate in a low duty cycle environment, such as an SD card, a CF card, a universal serial bus (USB) flash drive, or other media used in electronic devices such as personal computers, digital cameras, mobile phones, etc.

[0062] In other embodiments, the storage controller 111 is configured to operate in a high duty cycle environment SSD or eMMC, which is used for data storage in mobile devices such as smartphones, tablets, laptops, and enterprise storage arrays.

[0063] In some embodiments, the storage controller 111 may be configured to manage data stored in the first memory 1121 and the second memory 1122, and communicate with an external device (e.g., the host 100). In some embodiments, the storage controller 111 may also be configured to control operations of the first memory 1121 and the second memory 1122, such as read, erase, and program operations. In some embodiments, the storage controller 111 may also be configured to manage various functions regarding data stored or to be stored in the first memory 1121 and the second memory 1122, including at least one of bad block management, garbage collection (GC), logical to physical address conversion, and wear leveling.

[0064] In addition, the storage controller 111 can communicate with an external device (e.g., the host 100) through at least one of various interface protocols. It should be noted that the interface protocol includes at least one of a universal serial bus (USB) protocol, a Microsoft Management Console (MMC) protocol, a peripheral component interconnect (Peripheral Component Interconnect), a PCI protocol, a PCI Express (Peripheral Component Interconnect Express, PCI-E) protocol, an advanced technology attachment (ATA) protocol, a serial ATA protocol, a parallel ATA protocol, a small computer system interface (SCSI) protocol, an enhanced small disk interface (ESDI) protocol, an integrated drive electronic (IDE) protocol, and a FireWire protocol.

[0065] For SSDs, when responding to a large number of IO requests, the target devices inside, such as the storage controller, dynamic random access memory (DRAM), and NAND flash, will perform frequent read and write operations. These operations will increase the current and power consumption of the devices, causing the temperature of the storage controller, random access memory, and NAND flash to rise significantly. And because the internal space of the SSD is relatively small, the accumulation of heat energy may be more significant. Therefore, how to ensure the safety of the target devices inside the SSD when the internal temperature continues to rise is a key concern.

[0066] One possible implementation method is to provide protection for the target device of the SSD through the thermal protection (Thermal Throttling) module in the firmware. The target device is provided with a temperature sensor inside or outside. The thermal protection module obtains the data collected by the temperature sensor of each target device to monitor the temperature of each target device of the SSD. That is, the thermal protection module can be divided into different functional areas, and different functional areas are responsible for monitoring the corresponding target devices. Therefore, different functional areas of the thermal protection module can be regarded as various corresponding thermal protection modules for different target devices. Once the temperature reaches the set threshold, the thermal protection module will automatically limit the read and write speed of the SSD to reduce the heat generated by the components. By reducing the read and write bandwidth, the workload of the SSD is reduced and the temperature of each component will also drop.

[0067] The thermal protection module needs to continuously monitor the operating temperature of these target devices to ensure that the target devices are in normal operation. One possible implementation method is to use a fixed sampling frequency to monitor the operating temperature of the target devices, but a fixed sampling frequency cannot meet the needs of different target devices, resulting in a sampling frequency that is too high or too low.

[0068] When the sampling frequency of the thermal protection module is too high, it will increase the use of hardware resources and cause the performance of the storage system to deteriorate. Because at a higher sampling frequency, the thermal protection module needs to monitor the hardware temperature frequently, which consumes computing resources and power consumption. Therefore, using too high a sampling frequency may cause the storage system to become slow, delay response and reduce data throughput.

[0069] When the sampling frequency of the thermal protection module is too low, the thermal protection module cannot detect the temperature rise or fall in time, delaying the time to take protective measures. In a high temperature environment, overheating of the target device will create a risk of insufficient data integrity. Too low a sampling frequency means that the thermal protection module cannot respond quickly to the temperature rise of the target device, thereby increasing the probability of hardware failure and data corruption when the SSD is working at high temperature.

[0070] In summary, when using a fixed sampling frequency to monitor the operating temperature of the target device, it is not flexible to adapt to temperature changes under different workloads and environmental conditions. Since workloads and environmental conditions may change all the time, a fixed sampling frequency may lead to too frequent or insufficient temperature sampling, making it difficult for the storage system to accurately identify and respond to potential overheating problems.

[0071] Based on the above background, how to reasonably adjust the sampling frequency of the thermal protection module so as to more timely protect the target device and data integrity inside the solid-state drive is a key concern of the industry.

[0072] One possible implementation method is to dynamically adjust the sampling frequency of the thermal protection module corresponding to each target device according to different sampling frequency influencing parameters.

[0073] Exemplarily, an embodiment of the present disclosure provides a sampling frequency adjustment method, see Figure 4 , the method comprising:

[0074] S10: Obtain thermal sampling influencing factors of the target device.

[0075] The target device can be a critical system component in a solid-state drive, for example, combined with Figure 3 , the target device includes a storage controller 111 and a memory 112, and the memory 112 includes a first memory 1121 and a second memory 1122. In some embodiments, the first memory 1121 includes a random access memory, and the second memory 1122 includes a NAND flash memory. Thermal sampling influencing factors refer to factors that affect the sampling frequency of the temperature of the thermal protection module corresponding to the storage controller and the memory. These factors may be related to the location, function or other characteristics of the device. Different devices are affected by different factors, so it is necessary to determine the corresponding sampling frequency adjustment strategy according to the characteristics of different target devices.

[0076] S20: According to the thermal sampling influencing factors, the sampling frequency of the thermal protection module corresponding to the target device is adjusted.

[0077] The sampling frequency of the corresponding thermal protection module is dynamically adjusted according to the thermal sampling influencing factors of the storage controller and memory to protect and optimize the performance of the solid-state drive and the security and reliability of the data. The solid-state drive can perform adaptive performance management according to different situations, thereby providing higher performance and reliability, while extending the hardware life and reducing the risk of failure, thereby ensuring that the solid-state drive can perform excellent performance under various applications and workloads.

[0078] The solution provided by the embodiment of the present disclosure dynamically adjusts the sampling frequency of the thermal protection module according to different thermal sampling influencing factors, so that the thermal protection module can identify potential temperature problems in a timely manner, thereby ensuring that the target device inside the solid-state drive can be protected more timely and the integrity of the data can be guaranteed. In addition, dynamically adjusting the sampling frequency can also reduce power consumption and heat generation, and improve energy efficiency.

[0079] When adjusting the sampling frequency of the target device, the temperature of the target device itself is an important influencing factor, and its influence is far greater than other influencing factors. This is because the temperature of the target device itself is directly related to the stability, performance and life of the hardware, so it needs special attention. First, the temperature of the target device itself is one of the key indicators of the hardware operation status. Different target devices are very sensitive to the temperature of the device itself. High temperature will cause the performance of the electronic components inside the device to degrade or even damage, which will affect the reliability and life of the device. Secondly, the temperature of the target device itself is a directly measurable parameter that can provide real-time information, so it has significant advantages in adjusting the sampling frequency. In contrast, other potential influencing factors may be more difficult to measure and monitor accurately. Therefore, a basic sampling frequency can be determined based on the temperature of the target device itself, and then the basic sampling frequency can be corrected based on other influencing factors with less influence.

[0080] See also Figure 5 In a possible implementation, S20 includes the following sub-steps:

[0081] S21: Determine a basic sampling frequency according to the temperature of the target device.

[0082] During the operation of the hardware device, heat will be generated, causing the temperature to rise. At this stage, the basic sampling frequency should increase with the temperature. When the temperature rises to the normal operating temperature range of the target device, it means that the target device is in a normal working state, so a fixed sampling frequency can be used for it. If the temperature continues to rise and exceeds the normal temperature operating range of the target device, it may have a greater impact on the reliability of the device. At this stage, more attention should be paid to the temperature of the target device, so the basic sampling frequency should increase with the temperature, and the change trend of the basic sampling frequency should be faster.

[0083] S22: Determine a sampling frequency adjustment amount according to an influencing factor of at least one dimension.

[0084] Thermal sampling influencing factors include not only the temperature factors of the target device that have the main influence, but also some influencing factors that have a secondary influence. Influencing factors refer to various factors or variables that can affect the performance and operation of the target device. These influencing factors may cause the temperature of the device to change accordingly under different circumstances. Then, based on the influence of these influencing factors, the sampling frequency adjustment amount after the combined effect of multiple influencing factors is obtained.

[0085] S23: adjusting the sampling frequency of the thermal protection module corresponding to the target device to the target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

[0086] After obtaining the sampling frequency adjustment amount and the basic sampling frequency, the target sampling frequency is calculated by adding the basic sampling frequency and the sampling frequency adjustment amount. The target frequency reflects the sampling frequency that is dynamically adjusted according to the device temperature state (basic sampling frequency) and the influencing factor (sampling frequency adjustment amount). The calculated target sampling frequency is applied to the thermal protection module to update the sampling frequency setting of the thermal protection module. The thermal protection module collects the temperature information of each target device according to the new frequency to respond to changes in the device state in a timely manner.

[0087] As an example, the calculation formula for the target sampling frequency may be:

[0088] Ft=Fb+ΔF

[0089] Wherein, the basic sampling frequency is Fb, the sampling frequency adjustment amount is ΔF, and the target sampling frequency is Ft.

[0090] See also Figure 6 In a possible implementation, S21 includes the following sub-steps:

[0091] S211: When the temperature of the target device is within the first temperature range, determining the basic sampling frequency to be the first sampling frequency;

[0092] S212: When the temperature of the target device is in the second temperature range, determine the basic sampling frequency to be the second sampling frequency; wherein the temperature in the first temperature range is lower than the temperature in the second temperature range, and the first sampling frequency is lower than the second sampling frequency.

[0093] The first temperature interval and the second temperature interval can be a temperature interval with a smaller range, for example, 1°C can be used as a temperature interval, or a temperature interval with a larger range, for example, 10°C can be used as a temperature interval. The present disclosure does not limit the specific numerical values ​​of the temperature intervals. The change of the basic sampling frequency of the target device from the first temperature interval to the second temperature interval reflects the trend that the basic sampling frequency of the target device increases with the increase of temperature. It should be noted that the first temperature interval and the second temperature interval do not include the normal working temperature interval of the target device.

[0094] For example, see Figure 7 , the possible range of the temperature of the target device includes temperature interval T1, temperature interval T2, temperature interval T3 and temperature interval T4, where the temperature increases in sequence, wherein the basic sampling frequency corresponding to temperature interval T1 is f1, the basic sampling frequency corresponding to temperature interval T2 is f2, the basic sampling frequency corresponding to temperature interval T3 is f3, and the basic sampling frequency corresponding to temperature interval T4 is f4, and f4>f3>f2 is greater than f1.

[0095] Exemplarily, when the temperature of the target device increases from a first temperature range to a second temperature range, for example, from a temperature in temperature range T1 (eg, t1) to a temperature in temperature range T2 (eg, t2), the corresponding basic sampling frequency also increases from f1 to f2.

[0096] Alternatively, when the temperature of the target device increases from a temperature in the temperature interval T2 (for example, t2) to a temperature in the temperature interval T3 (for example, t3), the corresponding basic sampling frequency also increases from f2 to f3.

[0097] Exemplarily, in a possible implementation, the change rate of the basic sampling frequency from the temperature interval T2 to the temperature interval T3 is greater than the change rate of the basic sampling frequency from the temperature interval T1 to the temperature interval T2.

[0098] It should be noted that the range of the temperature interval can be reduced as the temperature increases, so that after the temperature of the target device exceeds the normal operating temperature value, the change of the basic sampling frequency can respond to the temperature change more promptly.

[0099] Exemplarily, when the temperature of the target device exceeds the normal operating temperature interval T2, the ranges of the temperature interval T3 and the temperature interval T4 decrease in sequence, but the change value of the basic sampling frequency remains the same.

[0100] It should be noted that the corresponding relationship between the temperature of different target devices and the basic sampling frequency is different. That is, the corresponding relationship between the temperature of the storage controller itself and the basic sampling frequency of the corresponding thermal protection module is different from the corresponding relationship between the temperature of the storage device itself and the basic sampling frequency of the corresponding thermal protection module, and the corresponding relationship between the temperature of the target device and the basic sampling frequency of the corresponding thermal protection module can be not only a linear relationship, but also a nonlinear relationship, such as an exponential relationship, etc., which is not limited by the present disclosure.

[0101] For storage controllers and memories, due to their different locations and functions, the thermal sampling influencing factors that affect their sampling frequencies are also different. The influencing factors for storage controllers include the temperature change rate, and the influencing factors for memories include the temperature change rate, the first position parameter, the second position parameter, the number of program / erase cycles, the number of bad blocks, and the type of stored data.

[0102] See also Figure 8 In a possible implementation, calculating the sampling frequency adjustment amount according to the above-mentioned influencing factors may include the following sub-steps:

[0103] S221: Obtaining a first adjustment amount for each dimension according to an influence factor of each dimension in at least one dimension;

[0104] S222: Determine a sampling frequency adjustment amount based on a first adjustment amount of each dimension and a weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in at least one dimension and the corresponding weight coefficient.

[0105] For the influencing factors in each dimension, corresponding calculations are performed to obtain the first adjustment amount of the dimension. The first adjustment amount reflects the degree to which the influencing factors of the dimension affect the sampling frequency, and the weight coefficient determines the relative importance of each dimension. These first adjustment amounts are then weighted and combined using the weight coefficient to obtain the final sampling frequency adjustment amount. It should be noted that the weight coefficient corresponding to each dimension needs to be determined according to the actual application scenario, and this disclosure does not limit this.

[0106] For example, for each dimension influence factor i, the corresponding first adjustment amount A is calculated: il This adjustment value indicates the degree of influence of the dimension on the sampling frequency. It can be positive or negative, depending on the direction of the influencing factor. That is, the influence of the influencing factor on the sampling frequency includes both positive and negative directions. When the influence is in the positive direction, the first adjustment value A il is a positive number. When the impact is in the negative direction, the first adjustment amount A il For each dimension i, the first adjustment amount A corresponding to it il and weight coefficient W i Multiply them together to get the partial adjustment amount P i , that is, P i =A il ×W i This step reflects the relative importance of the adjustments in different dimensions, and the weight coefficient is used to adjust their impact. Finally, all partial adjustments P i Add together to get the final sampling frequency adjustment ΔF, that is, Here, n represents the number of dimensions.

[0107] The above process implements the calculation of the dynamic adjustment amount of the sampling frequency based on the influencing factors and weight coefficients in multiple dimensions. The first adjustment amount of each dimension represents the contribution of the dimension to the sampling frequency, while the weight coefficient determines the relative importance of each dimension. By combining these adjustments together, a more complex sampling frequency adjustment strategy can be implemented based on the influencing factors of multiple dimensions.

[0108] Regarding the influencing factor of the temperature change rate, on the one hand, the operating temperature of the storage controller directly affects its performance. A faster temperature change rate may cause the storage controller temperature to rise or fall rapidly, which may cause performance fluctuations. For example, when the temperature rises, the storage controller may slow down its processing speed to prevent overheating, which may cause performance degradation. On the other hand, rapid changes in temperature may cause thermal stress inside the storage controller, which may increase the risk of failure.

[0109] For memory, on the one hand, NAND flash memory and random access memory are very sensitive to the rate of temperature change. Rapid temperature changes may cause the charge state of the storage unit to change, which may lead to data damage or loss. On the other hand, the life of the memory is related to temperature. Rapid temperature changes may accelerate the wear of the memory, resulting in a reduction in the life of the memory.

[0110] Therefore, the temperature change rate is a key factor that can have a significant impact on the performance, reliability and life of the storage controller and memory. Therefore, dynamically adjusting the sampling frequency of the thermal protection module according to the temperature change rate is essential to ensure that the memory can provide optimal performance and reliability under various operating conditions.

[0111] In a possible implementation manner, the first adjustment amount in the dimension of the temperature change rate may be determined by increasing the first adjustment amount corresponding to the temperature change rate when the temperature change rate increases.

[0112] For example, see Fig. 9 , when the temperature change rate of the target device exceeds the threshold value Tc5 and gradually increases to Tc6, the corresponding first adjustment amount also gradually increases from 0 to fc4. When the temperature change rate continues to increase from Tc6 to Tc7, the corresponding first adjustment amount also gradually increases from fc4 to fc5. When the temperature change rate continues to increase from Tc7 to Tc8, the corresponding first adjustment amount also gradually increases from fc5 to fc6. When the temperature change rate increases from Tc5 to Tc6, its increase value is ΔTc1, and its corresponding first adjustment amount is Δfc1. When the temperature change rate increases from Tc6 to Tc7, its increase value is ΔTc2, and its corresponding first adjustment amount is Δfc2. When the temperature change rate increases from Tc7 to Tc8, its increase value is ΔTc3, and its corresponding first adjustment amount is Δfc3. It can be seen that ΔTc1 is equal to ΔTc2 and ΔTc3, Δfc1 is less than Δfc2, and Δfc2 is less than Δfc3. That is, the first adjustment amount increases with the increase of the temperature change rate, and as the temperature change rate increases, the increasing trend of the first adjustment amount with the temperature change rate also increases.

[0113] As for the influencing factor of the first position parameter, the first position parameter is used to characterize the relative distance between the memory and the storage controller. When the temperature of the storage controller is high, when the first position parameter changes, it will affect the temperature of the memory. Since the distance between the memory and the storage controller affects the speed of heat conduction. If the memory is close to the storage controller, heat can be transferred from the storage controller to the memory faster, causing the temperature of the memory to rise. This effect is more significant when the temperature of the storage controller is high.

[0114] Therefore, the temperature of the memory decreases as the distance from the memory controller increases. If the memory is very close to the memory controller, it may experience a larger temperature gradient. This means that part of the memory may be at a higher temperature, while another part may be at a lower temperature. Therefore, it is necessary to dynamically adjust the sampling frequency of the thermal protection module according to the first position parameter.

[0115] In a possible implementation manner, the first adjustment amount of the dimension of the first position parameter may be calculated by increasing the first adjustment amount corresponding to the first position parameter when the first position parameter decreases.

[0116] For example, see Fig.10 , when the relative distance between the memory and the storage controller exceeds the threshold d1 and gradually increases to d2, the corresponding first adjustment amount also gradually decreases from fc4 to fc3. When a position parameter continues to increase from d2 to d3, the corresponding first adjustment amount also gradually decreases from fc3 to fc2. When the relative distance increases from d1 to d2, its increase value is Δd1, and its corresponding first adjustment amount is Δfc1. When the relative distance increases from d2 to d3, its increase value is Δd2, and its corresponding first adjustment amount is Δfc2. It can be seen that Δd1 is equal to Δd2, and Δfc1 is greater than Δfc2. That is, the first adjustment amount decreases with the increase of the first position parameter, and as the first position parameter increases, the decreasing trend of the first adjustment amount with the temperature change rate also decreases.

[0117] For the influencing factor of the second position parameter, the second position parameter is used to characterize the relative distance between the memory and the high temperature area in the electronic device. The memory is usually installed inside the electronic device. This position may vary depending on the design and layout of the electronic device. Due to the space inside the electronic device and the speed and direction of the heat dissipation airflow, the memory at different positions will also show different thermal characteristics. The high temperature area refers to certain areas inside the electronic device, which usually have a high temperature because some components in the electronic device generate a lot of heat, such as the power module or CPU of the electronic device. If the memory is close to the high temperature area, some parts of the memory may be more susceptible to heat, while other parts may be relatively cool. This may cause a temperature gradient inside the memory, thereby affecting the performance and reliability of the memory. In addition, the temperature of the memory has a greater impact on its lifespan. The memory close to the high temperature area may wear and age faster. Therefore, it is necessary to dynamically adjust the sampling frequency of the thermal protection module corresponding to the memory according to the second position parameter.

[0118] In one possible implementation, the second position parameter is used to characterize the relative distance between the memory in the electronic device and the high temperature area inside the electronic device, and the implementation method for calculating the first adjustment amount of this dimension of the second position parameter can be: when the second position parameter decreases, increase the first adjustment amount corresponding to the second position parameter.

[0119] For example, see Fig.11 , when the relative distance between the memory and the high temperature area in the electronic device exceeds the threshold value d4 and gradually increases to d5, the corresponding first adjustment amount also gradually decreases from fc8 to fc7. When the relative distance between the memory and the high temperature area in the electronic device continues to increase from d5 to d6, the corresponding first adjustment amount also gradually decreases from fc7 to fc6. When the relative distance increases from d4 to d5, the increase value is Δd1, and the corresponding first adjustment amount is Δfc1. When the relative distance between the memory and the high temperature area in the electronic device increases from d5 to d6, the increase value is Δd2, and the corresponding first adjustment amount is Δfc2. It can be seen that Δd1 is equal to Δd2, and Δfc1 is greater than Δfc2. That is, the first adjustment amount decreases with the increase of the second position parameter, and as the second position parameter increases, the decreasing trend of the rate of change of the first adjustment amount with the increase of the second position parameter is also decreasing.

[0120] It should be noted that the changing trends of the corresponding relationship between the first position parameter and its corresponding first adjustment amount, and the corresponding relationship between the second position parameter and its corresponding first adjustment amount may be the same or different, and need to be determined based on actual usage, and the present disclosure does not limit this.

[0121] As for the influencing factor of the Program / Erase Cycle (PECycle), the Program / Erase Cycle is used to characterize how many times the memory has been written and erased. A memory with a large number of Program / Erase Cycles has experienced a large number of write and erase operations, which may cause the wear and tear of the memory cell and the change of the charge state. And as the number of Program / Erase Cycles increases, the data stability of the memory may decrease because the memory cell becomes more prone to bit flipping or data corruption. Therefore, it is necessary to dynamically adjust the sampling frequency of the thermal protection module according to the Program / Erase Cycle of the memory cell.

[0122] In a possible implementation, the first adjustment amount for calculating the number of programming / erase cycles may be calculated by increasing the first adjustment amount corresponding to the number of programming / erase cycles as the number of programming / erase cycles increases.

[0123] For example, see Fig.12 , when the number of programming / erasing cycles of the memory exceeds the preset threshold and gradually increases to c1, the corresponding first adjustment amount also gradually increases from 0 to fc1, and when the number of programming / erasing cycles continues to increase from c1 to c2, the corresponding first adjustment amount also gradually increases from fc1 to fc2. When the number of programming / erasing cycles continues to increase from c2 to c3, the corresponding first adjustment amount also gradually increases from fc2 to fc3. When the number of programming / erasing cycles increases from 0 to c1, the increase value is Δc1, and the corresponding first adjustment amount is Δfc1. When the number of programming / erasing cycles increases from c1 to c2, the increase value is Δc2, and the corresponding first adjustment amount is Δfc2. When the number of programming / erasing cycles increases from c2 to c3, the increase value is Δc3, and the corresponding first adjustment amount is Δfc3. It can be seen that Δc1 is equal to Δc2 and Δc3, Δfc1 is less than Δfc2, and Δfc2 is less than Δfc3. That is, the first adjustment amount increases with the increase of the number of programming / erasing cycles, and as the number of programming / erasing cycles increases, the first adjustment amount also increases with the increase of the number of programming / erasing cycles.

[0124] Regarding the influencing factor of the number of bad blocks, a bad block is a storage block in the memory that cannot be read or written normally. The presence of bad blocks increases the instability of data because they may cause data loss or inaccessibility. Fewer bad blocks on the memory usually means that the data stored in the memory is more reliable because there are more available blocks in the memory capacity. For a memory with fewer bad blocks, there is a greater chance of taking on more read and write tasks because there are more available blocks and higher data stability. Therefore, the sampling frequency needs to be dynamically adjusted according to the number of bad blocks.

[0125] In a possible implementation, the first adjustment amount for the dimension of the number of bad blocks may be calculated by increasing the first adjustment amount corresponding to the influencing factor of the number of bad blocks when the number of bad blocks increases.

[0126] For example, see Fig.13 , when the number of bad blocks in the memory exceeds the preset threshold and gradually increases to n1, the corresponding first adjustment amount also gradually increases from 0 to fc1. When the number of bad blocks continues to increase from n1 to n2, the corresponding first adjustment amount also gradually increases from fc1 to fc2. When the number of bad blocks continues to increase from n2 to n3, the corresponding first adjustment amount also gradually increases from fc2 to fc3. When the number of bad blocks increases from 0 to n1, the increase value is Δn1, and the corresponding first adjustment amount is Δfc1. When the number of bad blocks increases from n1 to n2, the increase value is Δn2, and the corresponding first adjustment amount is Δfc2. When the number of bad blocks increases from n2 to n3, the increase value is Δn3, and the corresponding first adjustment amount is Δfc3. It can be seen that Δn1 is equal to Δn2 and Δn3, Δfc1 is less than Δfc2, and Δfc2 is less than Δfc3. That is, the first adjustment amount increases with the increase in the number of bad blocks, and as the number of bad blocks increases, the first adjustment amount also increases with the increase in the number of bad blocks.

[0127] Regarding the influencing factor of the type of stored data, the data stored in the memory can include two types of data: cold data and hot data. Due to the influence of data locality, after some data is read or written, they may be accessed again in a short time. This causes a small part of the data to be frequently accessed, while other data is relatively rarely accessed, that is, data read and write operations tend to be concentrated on the memory containing hot data. Therefore, in order to better manage the memory, it is necessary to dynamically adjust the sampling frequency of the thermal protection module according to the type of data stored in the memory.

[0128] In a possible implementation manner, the implementation manner of calculating the first adjustment amount of the dimension of the type of stored data may be: when the type of stored data is hot data, increasing the first adjustment amount corresponding to the type of stored data.

[0129] For example, see Fig.14, when the data hotness of the memory exceeds the preset threshold and gradually increases to m1, the corresponding first adjustment amount also gradually increases from 0 to fc1. When the data hotness continues to increase from m1 to m2, the corresponding first adjustment amount also gradually increases from fc1 to fc2. When the data hotness continues to increase from m2 to m3, the corresponding first adjustment amount also gradually increases from fc2 to fc3. When the data hotness increases from 0 to m1, the increase value is Δm1, and the corresponding first adjustment amount is Δfc1. When the data hotness increases from m1 to m2, the increase value is Δm2, and the corresponding first adjustment amount is Δfc2. When the data hotness increases from m2 to m3, the increase value is Δm3, and the corresponding first adjustment amount is Δfc3. It can be seen that Δm1 is equal to Δm2 and Δm3, Δfc1 is less than Δfc2, and Δfc2 is less than Δfc3. That is, the first adjustment amount increases as the data hotness increases, and as the data hotness increases, the first adjustment amount also increases with the increase trend of the data hotness.

[0130] In a possible implementation, when considering the factors affecting the sampling frequency, in addition to the factors mentioned above, the different types of read and write operations performed by the solid-state drive can also be taken into consideration as another important influencing factor. Solid-state drives can usually perform a variety of read and write operations, such as sequential read and write, random read and write, and 4K read and write. These different types of read and write operations will have different degrees of impact on the workload, performance, and temperature of the solid-state drive, so the sampling frequency of the thermal protection module can be dynamically adjusted according to the current read and write type to more effectively manage the temperature and optimize the performance.

[0131] For example, different types of read and write operations will cause different workloads on the chips inside the SSD. For example, sequential read and write usually involve continuous reading and writing of large blocks of data, while random read and write involve random reading and writing of small blocks of data. These different workloads will cause different heat generation and distribution of the chip, which will affect the temperature change curve. Therefore, the sampling frequency can be dynamically adjusted according to the different types of read and write operations performed by the SSD, which can more accurately manage the temperature, optimize performance, extend the life of the hard disk, and improve the stability and reliability of the system.

[0132] In a possible implementation, in addition to the influencing factors mentioned above, the type of background tasks performed by the electronic device can also be used as an influencing factor of the sampling frequency. Background tasks can cause changes in the internal load of the solid-state drive. Therefore, the sampling frequency of the thermal protection module can be adjusted according to different types of background tasks to better adapt to changes in system load.

[0133] The sampling frequency adjustment method provided by the embodiment of the present disclosure firstly intelligently adjusts the sampling frequency of the thermal protection module according to the thermal sampling influencing factors of the target device. In this way, when the solid-state drive responds to a large number of IO requests, the temperature monitoring and protection can be dynamically optimized, thereby more effectively maintaining the stability and performance of the system. Secondly, by adjusting the sampling frequency according to the thermal sampling influencing factors, the system can more accurately monitor and respond to temperature changes inside the solid-state drive. This helps to reduce the potential impact of high temperature on the solid-state drive and reduce the possibility of data corruption and data loss. By intelligently adjusting the sampling frequency, the system can reduce the rate of wear and degradation of key components inside the solid-state drive. This will extend the service life of the solid-state drive and reduce maintenance and replacement costs.

[0134] In addition, the sampling frequency adjustment method provided by the present disclosure adjusts the sampling frequency of the thermal protection module corresponding to the target device to the target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, thereby achieving more refined sampling frequency management. The more refined sampling frequency management achieves higher reliability, lower energy consumption and longer hardware life by intelligently and adaptively adjusting the monitoring and protection mechanism.

[0135] It should be noted that the above embodiments are described by taking a solid state drive as an example, and the method of the present application can also be applied to other storage systems.

[0136] An embodiment of the present disclosure also provides a storage system, including: a memory 112 and a storage controller 111; the storage controller 111 is coupled to the memory 112, and the storage controller 111 is configured to: obtain a thermal sampling influencing factor of a target device, and adjust a sampling frequency of a thermal protection module corresponding to the target device according to the thermal sampling influencing factor.

[0137] In some embodiments, the thermal sampling influencing factors include the temperature of the target device and the influencing factors of at least one dimension. The storage controller 111 is specifically configured to: determine the basic sampling frequency according to the temperature of the target device, determine the sampling frequency adjustment amount according to the influencing factors of at least one dimension, and adjust the sampling frequency of the thermal protection module corresponding to the target device to the target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

[0138] In some embodiments, the storage controller 111 is specifically configured to: when the temperature of the target device is in a first temperature range, determine the basic sampling frequency as a first sampling frequency; when the temperature of the target device is in a second temperature range, determine the basic sampling frequency as a second sampling frequency, wherein the temperature in the first temperature range is lower than the temperature in the second temperature range, and the first sampling frequency is lower than the second sampling frequency.

[0139] In some embodiments, the storage controller 111 is specifically configured to: obtain a first adjustment amount for each dimension based on an influencing factor of each dimension in at least one dimension, and determine a sampling frequency adjustment amount based on the first adjustment amount for each dimension and a weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in at least one dimension and the corresponding weight coefficient.

[0140] In some embodiments, the target device includes a storage controller 111 and a memory 112, wherein the influencing factors of the storage controller 111 include a temperature change rate, and the influencing factors of the memory 112 include a temperature change rate, a first position parameter, a second position parameter, the number of program / erase cycles, the number of bad blocks, and the hot / cold degree type of the stored data.

[0141] In some embodiments, the first position parameter is used to characterize the relative distance between the memory 112 and the storage controller 111 , and the second position parameter is used to characterize the relative distance between the memory 112 and a high temperature area in the electronic device.

[0142] In some embodiments, the storage controller 111 is specifically configured to increase the first adjustment amount corresponding to the temperature change rate when the temperature change rate increases.

[0143] In some embodiments, the storage controller 111 is further specifically configured to: when the first position parameter decreases, increase the first adjustment amount corresponding to the first position parameter.

[0144] In some embodiments, the storage controller 111 is further specifically configured to: when the second position parameter decreases, increase the first adjustment amount corresponding to the second position parameter.

[0145] In some embodiments, the storage controller 111 is further specifically configured to: when the number of program / erase cycles increases, increase a first adjustment amount corresponding to the number of program / erase cycles.

[0146] In some embodiments, the storage controller 111 is further specifically configured to: when the number of bad blocks increases, increase a first adjustment amount corresponding to the number of bad blocks.

[0147] In some embodiments, the storage controller 111 is further specifically configured to: when the stored data is hot data, increase a first adjustment amount corresponding to an influencing factor of the hotness or coldness type of the stored data.

[0148] The present disclosure also provides an electronic device, which includes a host and the aforementioned storage system, wherein the host is connected to the storage system and is used to store data in the storage system or read data read by the storage system. Figure 1 The electronic device shown.

[0149] Those skilled in the art can clearly understand that, for the convenience and brevity of description, in the above embodiments, the description of each embodiment has different emphases, and the parts that are not described in detail in a certain embodiment can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0150] In the several embodiments provided in the present disclosure, it should be understood that the provided sampling frequency adjustment can be implemented in other ways. For example, the division of a certain module is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0151] Those of ordinary skill in the art will appreciate that the modules and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this disclosure.

[0152] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A sampling frequency adjustment method, characterized in that: The method comprises: Obtain the thermal sampling influencing factors of the target device; According to the thermal sampling influencing factors, the sampling frequency of the thermal protection module corresponding to the target device is adjusted.

2. The method according to claim 1, characterized in that The thermal sampling influencing factors include the temperature of the target device and an influencing factor of at least one dimension; and adjusting the sampling frequency of the thermal protection module corresponding to the target device according to the thermal sampling influencing factors includes: Determining a basic sampling frequency according to the temperature of the target device; Determining a sampling frequency adjustment amount according to an influencing factor of the at least one dimension; The sampling frequency of the thermal protection module corresponding to the target device is adjusted to a target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

3. The method according to claim 2, characterized in that The determining of the basic sampling frequency according to the temperature of the target device includes: When the temperature of the target device is within a first temperature range, determining the basic sampling frequency to be a first sampling frequency; When the temperature of the target device is within a second temperature range, determining the basic sampling frequency to be a second sampling frequency; The temperature in the first temperature interval is lower than the temperature in the second temperature interval, and the first sampling frequency is lower than the second sampling frequency.

4. The method according to claim 2, characterized in that: Determining the sampling frequency adjustment amount according to the influencing factor of the at least one dimension includes: Obtaining a first adjustment amount for each dimension according to an influence factor of each dimension in the at least one dimension; The sampling frequency adjustment amount is determined according to the first adjustment amount of each dimension and the weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in the at least one dimension and the corresponding weight coefficient.

5. The method according to any one of claims 1 to 4, characterized in that: The target device includes a storage controller and a memory, wherein the influencing factors of the storage controller include a temperature change rate, and the influencing factors of the memory include a temperature change rate, a first position parameter, a second position parameter, a number of program / erase cycles, a number of bad blocks, and a type of stored data.

6. The method according to claim 5, characterized in that The first position parameter is used to characterize the relative distance between the memory and the storage controller, and the second position parameter is used to characterize the relative distance between the memory and a high temperature area in the electronic device.

7. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension comprises: When the temperature change rate increases, the first adjustment amount corresponding to the temperature change rate is increased.

8. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension further includes: When the first position parameter decreases, the first adjustment amount corresponding to the first position parameter is increased.

9. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension further includes: When the second position parameter decreases, the first adjustment amount corresponding to the second position parameter is increased.

10. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension further includes: When the number of program / erase cycles increases, the first adjustment amount corresponding to the number of program / erase cycles is increased.

11. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension further includes: When the number of bad blocks increases, the first adjustment amount corresponding to the number of bad blocks is increased.

12. The method according to claim 4, characterized in that The obtaining, according to the influencing factor of each dimension, a first adjustment amount of each dimension further includes: When the type of the stored data is hot data, a first adjustment amount corresponding to the type of the stored data is increased.

13. A storage system, characterized in that: include: Memory and storage controller; The storage controller is coupled to the memory, and the storage controller is configured to: Obtain the thermal sampling influencing factors of the target device; According to the thermal sampling influencing factors, the sampling frequency of the thermal protection module corresponding to the target device is adjusted.

14. The storage system according to claim 13, characterized in that: The thermal sampling influencing factors include the temperature of the target device and an influencing factor of at least one dimension, and the storage controller is specifically configured as follows: Determining a basic sampling frequency according to the temperature of the target device; Determining a sampling frequency adjustment amount according to an influencing factor of the at least one dimension; The sampling frequency of the thermal protection module corresponding to the target device is adjusted to a target sampling frequency according to the basic sampling frequency and the sampling frequency adjustment amount, wherein the target sampling frequency is equal to the sum of the basic sampling frequency and the frequency adjustment amount.

15. The storage system according to claim 14, characterized in that: The storage controller is specifically configured as follows: When the temperature of the target device is within a first temperature range, determining the basic sampling frequency to be a first sampling frequency; When the temperature of the target device is within a second temperature range, determining the basic sampling frequency to be a second sampling frequency; The temperature in the first temperature interval is lower than the temperature in the second temperature interval, and the first sampling frequency is lower than the second sampling frequency.

16. The storage system according to claim 14, characterized in that: The storage controller is specifically configured as follows: Obtaining a first adjustment amount for each dimension according to an influence factor of each dimension in the at least one dimension; The sampling frequency adjustment amount is determined according to the first adjustment amount of each dimension and the weight coefficient corresponding to the dimension, wherein the sampling frequency adjustment amount is equal to the cumulative value of the product of the first adjustment amount corresponding to each dimension in the at least one dimension and the corresponding weight coefficient.

17. The storage system according to any one of claims 13 to 16, characterized in that: The target device includes a storage controller and a memory, wherein the influencing factors of the storage controller include a temperature change rate, and the influencing factors of the memory include a temperature change rate, a first position parameter, a second position parameter, a number of program / erase cycles, a number of bad blocks, and a type of hot or cold degree of stored data.

18. The storage system according to claim 17, characterized in that: The first position parameter is used to characterize the relative distance between the memory and the storage controller, and the second position parameter is used to characterize the relative distance between the memory and a high temperature area in the electronic device.

19. The storage system according to claim 16, characterized in that: The storage controller is specifically configured as follows: When the temperature change rate increases, the first adjustment amount corresponding to the temperature change rate is increased.

20. The storage system according to claim 16, characterized in that: The storage controller is further specifically configured as follows: When the first position parameter decreases, the first adjustment amount corresponding to the first position parameter is increased.

21. The storage system according to claim 16, characterized in that: The storage controller is further specifically configured as follows: When the second position parameter decreases, the first adjustment amount corresponding to the second position parameter is increased.

22. The storage system according to claim 16, characterized in that: The storage controller is further specifically configured as follows: When the number of program / erase cycles increases, the first adjustment amount corresponding to the number of program / erase cycles is increased.

23. The storage system according to claim 16, characterized in that: The storage controller is further specifically configured as follows: When the number of bad blocks increases, the first adjustment amount corresponding to the number of bad blocks is increased.

24. The storage system according to claim 16, characterized in that: The storage controller is further specifically configured as follows: When the stored data is hot data, a first adjustment amount corresponding to an influencing factor of the hotness or coldness type of the stored data is increased.

25. An electronic device, characterized in that: It comprises a host and a storage system as described in any one of claims 13 to 24, wherein the host is connected to the storage system to write data to the storage system or read data stored in the storage system.

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