Multi-mode sensing memristor neuron circuit based on S-type memristor parallel operation

Abstract

The invention relates to a multi-mode sensing memristor neuron circuit based on S-type memristor parallel operation, which comprises an S-type local active memristor, two direct-current voltage sources, a bias resistor R, a capacitance multiplier M, a step-down module, a step-up module M1 and an stm32 single chip microcomputer. The memristive neuron works in a chaos edge domain and is in a resting state. When the excitation of different intensities is sensed, the direct current bias required for waking up the neuron to generate the oscillation behavior is different, the frequency of the oscillation behavior is also different, and one memristive neuron can sense two kinds of excitation through efficient parallel operation by judging the direct current bias and the oscillation frequency.

Description

Technical Field

[0001] The present invention relates to a multi-modal sensing memristor neuron circuit based on current-controlled (S-type) memristor parallel operation, belonging to the technical field of memristor neuron oscillation circuits. Background Art

[0002] Neurons are a type of cell that is unique to animals and widely exist in nature. They are the main means for animals to perceive the external environment and process information. Memristor neurons composed of local active memristors (LAMs) can simulate various neuromorphic behaviors of biological neurons, generating a variety of complex behaviors such as spike bursts, periodic oscillations, and chaos, and can be applied to fields such as neuromorphic computing.

[0003] LAM and capacitor are connected in parallel to form a memristor neuron, which plays an important role in the dynamic behavior of artificial memristor neurons. Under certain stimulation, the resting neuron is awakened to an oscillating state. Other effects will affect its behavior under oscillation, and excessive stimulation will cause the neuron to return to a resting state.

[0004] There is no bionic sensing device in the prior art that can efficiently process two signals in parallel through a memristor neuron, and the two signals respectively affect the neuron to be awakened to an oscillating state and oscillating behavior. Summary of the invention

[0005] In order to overcome the shortcomings of existing research, the present invention provides a multi-modal sensing memristor neuron circuit based on parallel operation of S-type memristors.

[0006] The multimodal sensing memristor neuron circuit based on parallel operation of S-type memristors includes an S-type local active memristor, two DC voltage sources, a bias resistor R, a capacitance multiplier M, a buck module, a boost module M1 and an STM32 single-chip computer. The capacitance multiplier M is connected in parallel with the S-type local active memristor S1, the negative electrode of the memristor S1 is connected to the ground, the output port of the STM32 single-chip computer is connected in series with a bias resistor R after passing through the boost module M1, and then connected to the positive electrode of the memristor to provide bias to form a memristor neuron, and the bias resistor R is formed by connecting a sensing resistor R1 in parallel with a fixed resistor R a Then connect a fixed value resistor R in series b Composition: Capacitance multiplier M Two proportional resistors R c is a fixed value resistor, R2 is a sensing resistor, the output port of the memristor neuron is connected to the input port of the microcontroller after passing through the step-down module, and the microcontroller is connected to the display screen.

[0007] The memristor uses a simplified polynomial S-type local active memristor model, the model is as follows:

[0008]

[0009] Among them, v m and i m represents the voltage and current of the memristor, x is the state variable, R m (x) is the memristor function, and the function f(x,i m ) describes the state equation of the memristor; d2, d0, α0, α1, β l is the expansion coefficient, d2 = 100, d0 = 300, α0 = 9 × 10 4 α1=-1×10 4 , β1=-2.5×10 7 The operation chips are TL084 integrated operational amplifier and AD633 multiplier.

[0010] The S-type local active memristor is a current-controlled type, and its DC voltage-current curve has a negative slope region. The actual physical device is formed due to the Mott effect of the memristor material. A simplified mathematical model is selected and a hardware circuit is built for circuit design.

[0011] Compared with the prior art, the present invention has the following beneficial effects:

[0012] The present invention proposes a multi-modal sensing memristor neuron circuit based on parallel operation of S-type memristors. A capacitor is connected in parallel with an S-type local active memristor and a DC bias is applied to form a memristor neuron. Through appropriate parameter design and device selection, the memristor neuron works in the chaotic edge domain and is in a resting state. When sensing stimuli of different intensities, the DC bias required for the neuron to be awakened to produce oscillatory behavior is different, and the frequency of the oscillation behavior is also different. By determining the DC bias size and the oscillation frequency, a memristor neuron can efficiently sense two stimuli in parallel. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0014] Figure 1 The schematic diagram of the memristor neuron circuit based on the current-controlled memristor of the present invention;

[0015] Figure 2 It is the time domain waveform of the voltage at the memristor terminal when the memristor neuron has no perceived stimulation;

[0016] Figure 3 This is the time domain waveform of the voltage at the memristor terminal when the memristor neuron senses light intensity and pressure. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] like Figure 1 The figure shows the schematic diagram of the memristor neuron circuit based on the current-controlled memristor, and the multimodal sensing memristor neuron circuit based on the parallel operation of the S-type memristor, including an S-type local active memristor, two DC voltage sources, a bias resistor R, a capacitance multiplier M, a buck module, a boost module M1 and an STM32 single-chip computer (including a display screen). The capacitance multiplier M is connected in parallel with the S-type local active memristor S1, and the negative electrode of the memristor S1 is connected to the ground. The output port of the STM32 single-chip computer passes through the boost module M1 and then is connected in series with the bias resistor R and then connected to the positive electrode of the memristor to provide bias to form a memristor neuron. The bias resistor R is composed of the sensing resistor R1 connected in parallel with the fixed resistor R a Then connect a fixed value resistor R in series b Composition: Capacitance multiplier M Two proportional resistors R c is a fixed value resistor, R2 is a sensing resistor, the output port of the memristor neuron is connected to the input port of the microcontroller after passing through the step-down module, and the microcontroller is connected to the display screen.

[0019] The memristor uses a simplified polynomial S-type local active memristor model, the model is as follows:

[0020]

[0021] Among them, v m and i m represents the voltage and current of the memristor, x is the state variable, R m (x) is the memristor function, and the function f(x,i m ) describes the state equation of the memristor; d2, d0, α0, α1, β l is the expansion coefficient, d2 = 100, d0 = 300, α0 = 9 × 10 4 α1=-1×10 4 , β1=-2.5×10 7 The operation chips are TL084 integrated operational amplifier and AD633 multiplier.

[0022] The S-type local active memristor is a current-controlled type, and its DC voltage-current curve has a negative slope region. The actual physical device is formed due to the Mott effect of the memristor material. A simplified mathematical model is selected and a hardware circuit is built for circuit design.

[0023] Build the S-type memristor hardware circuit, that is Figure 1 S1 in the figure. The bias resistor R is a voltage-dividing resistor, and its value affects the voltage actually applied to the memristive neuron by the input voltage vin. Due to the limited equivalent impedance of the memristive neuron itself, in order to make the voltage division reasonable, it is necessary to reduce the overall resistance change range by connecting the sensing resistor in series and parallel with the fixed resistor to achieve the purpose of matching the impedance of the memristive neuron. Therefore, the fixed resistors Ra = 7kΩ, Rb = 2kΩ, R1 is a varistor, and the range of the bias resistor R is 2kΩ~9kΩ. The capacitance change of the general capacitive variable sensor is pF level. In order to meet the nF level capacitance change required by the memristive neuron, the capacitance multiplier M is used instead of the traditional capacitor, and the capacitance magnification is R2 / Rc. Take C as a 22nF capacitor, the fixed resistor Rc = 30Ω, and R2 as a photoresistor.

[0024] The device is placed in the dark and under the extreme condition of no pressure, and the circuit is powered. At this time, the time domain waveform of the voltage vi on the memristor is as follows Figure 3 As shown in Figure 1, the memristor neuron is in a resting state. Then, by applying pressure and light stimulation, the time domain waveform of the voltage vi on the memristor is as follows: Figure 3 As shown, the awakening of resting-state memristive neurons is achieved, and the magnitude of pressure and light excitation is sensed by determining the magnitude of the input starting voltage vin and the frequency of vi in ​​the oscillation state - the magnitude of pressure is negatively correlated with the starting voltage, and the magnitude of light intensity is positively correlated with the oscillation frequency. The magnitude of pressure and light intensity is displayed on the display screen through a single-chip microcomputer.

[0025] The embodiments of the present invention are described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions and variations of these embodiments are made without departing from the principles and spirit of the present invention, and still fall within the scope of protection of the present invention.

Claims

1. A multi-modal sensing memristor neuron circuit based on parallel operation of S-type memristors, characterized by: The invention comprises an S-type local active memristor, two DC voltage sources, a bias resistor R, a capacitance multiplier M, a buck module, a boost module M1 and an STM32 microcontroller. The capacitance multiplier M is connected in parallel with the S-type local active memristor S1. The negative electrode of the memristor S1 is connected to the ground. The output port of the STM32 microcontroller passes through the boost module M1 and is connected in series with the bias resistor R and then connected to the positive electrode of the memristor to provide bias to form a memristor neuron. The bias resistor R is composed of a sensing resistor R1 connected in parallel with a fixed resistor R a Then connect a fixed value resistor R in series b Composition: Capacitance multiplier M Two proportional resistors R c is a fixed value resistor, R2 is a sensing resistor, the output port of the memristor neuron is connected to the input port of the microcontroller after passing through the step-down module, and the microcontroller is connected to the display screen.

2. The multi-modal sensing memristor neuron circuit based on parallel operation of S-type memristors according to claim 1, characterized in that: The memristor uses a simplified polynomial S-type local active memristor model, the model is as follows: Among them, v m and i m represents the voltage and current of the memristor, x is the state variable, R m (x) is the memristor function, and the function f(x,i m ) describes the state equation of the memristor; d2, d0, α0, α1, β l is the expansion coefficient, d2 = 100, d0 = 300, α0 = 9 × 10 4 α1=-1×10 4 , β1=-2.5×10 7 The operation chips are TL084 integrated operational amplifier and AD633 multiplier.

3. The multi-modal sensing memristor neuron circuit based on parallel operation of S-type memristors according to claim 1, characterized in that: The S-type local active memristor is a current-controlled type, and its DC voltage-current curve has a negative slope region. The actual physical device is formed due to the Mott effect of the memristor material. A simplified mathematical model is selected and a hardware circuit is built for circuit design.

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