A programming device and method for photoelectric-temperature-coupled phase change memory devices

Abstract

A photoelectric-temperature-time coupled programming device and method for phase change memory (PCM) devices includes a pump laser system, an electrical testing system, a thermal control system, and control and monitoring software. These systems operate collaboratively. Under the unified coordination of the control and monitoring software, the pump laser system emits laser pulses with specified parameters, coordinating with a displacement platform to achieve gradual crystallization or amorphization switching within a specified laser irradiation area and path. The thermal control system reaches a specified ambient temperature at a certain heating rate. The electrical testing system records the electrical response of the PCM device in real time during a specified test duration, realizing "photoelectric control and electrical measurement" programming of the PCM device under specific conditions. This invention achieves quantitative control of the crystal to amorphous volume ratio during the gradual switching between SET and RESET via photoelectric control and electrical measurement, obtaining linear, continuous, and symmetrical changes in the switching resistance value.

Description

Technical Field

[0001] This invention relates to the field of programming technology for phase change memory devices, and more specifically to a photoelectric-temperature-time coupled programming device and method for phase change memory devices. Background Technology

[0002] The rapid development of network and communication technologies, as well as big data and artificial intelligence, has placed extremely high demands on data storage. The traditional von Neumann architecture's "distribution of storage and compute" requires frequent data writing and retrieval from storage media during data processing, and the computing speed is gradually becoming insufficient to meet these demands. In recent years, academia and industry have been dedicated to developing a third type of storage technology: "non-volatile memory," aiming to achieve fast data reading and writing and stable storage within the same unit. Phase-change memory technology, represented by Intel Optane chips, has been commercialized and is one of the most mature non-volatile memory technologies.

[0003] Phase-change memory (PCM) technology utilizes the rapid, reversible phase transition between the amorphous and crystalline phases of a phase-change material (PCM) and the significant resistance difference to switch between logic values ​​"0" (RESET state) and "1" (SET state), enabling data erasure and writing. The SET and RESET states have a resistance window exceeding 1000 times, allowing multiple identifiable resistance values ​​to be obtained within the same memory cell through a step-by-step phase-change programming approach. This breaks through the limitations of binary storage, achieving "multi-value storage" and "in-memory computing" technologies. Step-by-step phase-change programming typically includes two methods: cumulative SET and iterative RESET. The former involves loading a series of electrical pulses with fixed pulse widths and amplitudes to control the gradual crystallization of the PCM within the device cell, while the latter involves loading a series of electrical pulses with fixed pulse widths and gradually increasing amplitudes to control the gradual amorphization of the PCM within the device cell. Both methods achieve continuous resistance changes by adjusting pulse parameters to alter the crystalline to amorphous volume ratio of the PCM within the device cell.

[0004] For in-memory computing technology, the ideal programming method for individual device cells in a device array requires that their resistance values ​​maintain a linear and continuous change during the gradual switching between SET and RESET, and that the resistance values ​​in the two switching processes have a symmetrical relationship. However, due to the significant randomness of phase change materials during nucleation and crystallization and melting and quenching, existing programming devices for phase change memory devices and cumulative write / iterative erase programming methods cannot achieve quantitative control of the crystal to amorphous volume ratio within the device cell. This results in nonlinear changes in resistance values ​​during the gradual switching between SET and RESET, and poor symmetry between the two. Therefore, there is an urgent need to develop a novel programming device and method that can achieve linear, continuous, and symmetrical changes in resistance values ​​in phase change memory devices. Summary of the Invention

[0005] To overcome the shortcomings of existing technologies, this invention proposes a photoelectric-temperature-time coupled programming device and method for phase change memory devices. By using laser precision positioning and quantitative programming of the switching region, it achieves quantitative control of the crystal to amorphous volume ratio during the gradual switching between SET and RESET, realizing linear, continuous, and symmetrical changes in the switching resistance value of the phase change memory device. Furthermore, the device of this invention couples a thermal control system and a time control system, enabling temperature regulation during switching and real-time recording of the electrical response of the device units over time.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] A photoelectric-temperature-time coupled phase change memory device programming device includes a pump laser system, an electrical testing system, a thermal temperature control system, and control and monitoring software;

[0008] The pump laser system, electrical testing system, thermal temperature control system, and control and monitoring software work together. Under the unified coordination of the control and monitoring software, the pump laser system emits laser pulses with specified parameters. In coordination with the displacement platform, the phase change storage material is gradually crystallized (SET gradual switching) or gradually amorphized (RESET gradual switching) under the specified laser irradiation area and path.

[0009] When the device is in the RESET state, the phase change storage film in the device is in the amorphous phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually crystallize, which is called SET gradual switching. When the device is in the SET state, the phase change storage film in the device is in the crystalline phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually amorphize, which is called RESET gradual switching. The above two operations can be switched between each other at any time.

[0010] Meanwhile, the heating and cooling temperature control system reaches the specified ambient temperature at a certain heating rate and maintains the temperature for a certain period of time. The electrical testing system records the electrical response of the phase change storage device in real time under the specified test duration, thereby realizing the "light-controlled electrical testing" programming operation of the phase change storage device under a specific environment.

[0011] The pump laser system is used to control the beam size, power, and pulse width parameters of the laser pulse, as well as to provide a light source for the phase transition region and acquire microscopic images in real time.

[0012] The electrical testing system is used to monitor the electrical signal response of phase change storage devices in real time;

[0013] The heating and cooling temperature control system is used to precisely control the ambient temperature, temperature changes, and heat preservation time parameters during the test.

[0014] The control and monitoring software is used to integrate all editable control parameters in the entire programming device, including laser pulse parameters, electrical test parameters, displacement platform parameters, and temperature control parameters.

[0015] The pumped laser system includes a laser control and focusing module, an illumination module, and a camera module. The laser control and focusing module is used to emit laser pulses and adjust the pulse parameters and laser beam size. The illumination module is used to provide a visible light source for the phase change storage device, with the illumination direction consistent with the laser illumination direction, and works with the camera module to monitor the microscopic image of the phase change region in real time.

[0016] The laser control and focusing module includes a signal generator and a laser controller. After the laser is emitted by the laser, it passes sequentially through a polarization-maintaining single-mode fiber, a laser collimator, an optical path calibration unit, a beam expander, a dichroic mirror, and an objective lens.

[0017] The output terminals of the signal generator and the laser controller are respectively connected to the input terminal of the laser. The signal generator is used to adjust the waveform, pulse width, and amplitude parameters of the laser pulse; the laser controller is used to control the laser to turn on and off; and the laser is used to generate a laser beam of a specific wavelength.

[0018] The polarization-maintaining single-mode fiber is used to connect the laser and the laser collimator, wherein the polarization-maintaining single-mode fiber is used for low-loss laser transmission; the laser collimator is used to convert the laser transmitted by the polarization-maintaining single-mode fiber into collimated spatial light.

[0019] The laser beam output from the laser collimator will sequentially pass through an interconnected optical path calibration unit, a beam expander, a dichroic mirror, and an objective lens. The optical path calibration unit adjusts the laser direction to ensure the laser beam is ultimately incident perpendicularly onto the sample surface. The beam expander uses a biconvex lens to adjust the size of the laser beam spot before it reaches the objective lens. The dichroic mirror reflects approximately 85% of the laser beam transmitted from the beam expander to the objective lens, which then focuses the laser beam into the phase-change memory device. The illumination module includes a fourth convex lens, a beam splitter, a dichroic mirror, and an objective lens arranged sequentially from an LED light source.

[0020] The LED light source provides illumination for microscopic observation of the sample. The illumination point light source output from the LED light source is first transmitted to the convex lens to diverge the illumination point light into parallel light. The beam splitter is located between the convex lens and the dichroic mirror. The beam splitter reflects the parallel light into the dichroic mirror on one side and transmits the reflected light from the phase change memory device to the camera on the other side. The dichroic mirror allows the illumination light to be transmitted to the objective lens, which is used to focus the parallel illumination light onto the phase change memory device.

[0021] The camera module includes an objective lens, a dichroic mirror, a beam splitter, a third convex lens, and a CMOS camera, arranged sequentially from the light reflected by the phase change memory device.

[0022] The electrical testing system includes a source meter and a probe. The source meter provides voltage and current measurement sources for the phase change memory device and records the electrical response signals (including but not limited to resistance values ​​and current values) of the phase change memory device before and after laser programming. The probe is used to connect the sample to the source meter. The electrical testing system can measure the electrical response of the phase change memory device in real time, and can also be coupled with time parameters to test the electrical response of the phase change memory device within a certain time range before and after laser programming.

[0023] The hot and cold temperature control system includes a temperature controller and a temperature control probe station. The temperature controller is used to precisely regulate the programmed ambient temperature, set a constant temperature for testing or change the temperature in real time for testing.

[0024] The temperature-controlled probe station is used to connect test probes for electrical response testing and to connect with a temperature controller for temperature and temperature change rate control of the test environment. High-temperature environments can be achieved through heaters, while low-temperature environments can be achieved using liquid nitrogen or liquid helium. The probe station can also introduce different gas atmospheres according to the test environment requirements, including but not limited to air, nitrogen, argon, oxygen, and vacuum atmosphere.

[0025] The control and monitoring software includes a laser control module, a signal generator control module, a displacement platform control module, a temperature control probe station control module, an electrical performance monitoring module, and a camera monitoring module.

[0026] The laser control module controls the switching and power of the laser; the signal generator control module sets the pulses emitted by the signal generator and configures parameters such as waveform, pulse width, and amplitude; the displacement platform control module adjusts the relative position of the phase change storage device and the laser, thereby controlling the irradiation path and area. The irradiation path is programmed to be perpendicular to the electrode direction, parallel to the electrode direction, or any path according to actual testing needs. The irradiation area is switched point by point or in a jump manner by changing the displacement step size, gradually crystallizing the amorphous region (SET step-by-step switching) or gradually amorphizing the crystalline region (RESET step-by-step switching), quantitatively changing the crystal to amorphous volume ratio of the effective phase change region inside the phase change storage device, ultimately achieving quantitative volume and specific area control of the phase change material. The system features precise programming, allowing for high-precision displacement of the adjustable displacement platforms (XYZ axis displacement platforms and XY axis displacement platforms) in the X, Y, and Z axes. It enables single-step displacement of a set distance and continuous displacement at a set speed. The temperature control probe station control module regulates the set temperature and temperature change rate parameters of the temperature controller 21. The electrical performance monitoring module monitors the electrical responses of the recording device unit during the SET / RESET transition, including linear changes in resistance (continuous increase or decrease) and symmetrical changes (increase followed by decrease or decrease followed by increase). It can also adjust parameters related to the test time in real time, including but not limited to resistance-temperature curves (RT curves), resistance-time curves (Rt curves), volt-ampere characteristic curves (IV curves), and voltage-current curves (VI curves). The camera monitoring module can monitor the microscopic images of the recording device unit in real time.

[0027] A photoelectric-temperature-time coupled phase change memory device programming method, which couples four parameters—optical, electrical, temperature and time—through important components such as a laser control and focusing module, a displacement platform control module, a temperature control probe station control module, and an electrical performance monitoring module;

[0028] The laser control and focusing module generates laser pulses with specific parameters. Combined with the displacement platform control module, the relative position of the device and the laser is adjusted. The phase change material in the device is manipulated by optical signals to quantitatively switch between SET and RESET step by step.

[0029] An electrical performance monitoring module is used to measure the linear, continuous, and symmetrical changes in resistance during device switching in real time. Simultaneously, the electrical signal response process within a certain time period can be recorded by setting the monitoring time. A temperature control probe station control module is used to set the test temperature of the phase change memory device and examine the response of the phase change memory device to electrical signals such as resistance under different temperature environments.

[0030] The above-mentioned programming device and programming method work together to achieve quantitative and controllable programming of linear and symmetrical changes in resistance values ​​in phase change memory devices.

[0031] In the laser control and focusing module, the polarization-maintaining single-mode fiber, laser, laser collimator, optical path calibration unit, beam expander, dichroic mirror, and objective lens directly modulate the phase change material in the phase change storage device. By using the pump laser system in the programming device to control the laser beam size and irradiation area, the Joule heating induced by the laser on the phase change material induces a crystallization or amorphization phase transition, thereby quantifying the volume ratio of crystal to amorphous material in the programming device unit. The parameters involved in the above operation are as follows:

[0032] The beam diameter ranges from 0.5 to 3 μm, the irradiation area ranges from 5 to 200 μm in length and 5 to 200 μm in width, the amorphization programming parameters are 100 to 150 mW power and 5 to 80 ns pulse width, the crystallization programming parameters are 20 to 100 mW power and 30 to 500 ns pulse width, and the volume ratio of crystal to amorphous material ranges from 0% to 100%.

[0033] By combining the laser control and focusing module in the pumped laser system with the displacement platform control module in the control and monitoring software, the laser pulse can be manipulated to precisely position and erase the programmed area, thereby obtaining the crystal to amorphous volume ratio (100% to 0%) corresponding to the previous switching process.

[0034] Because of the huge difference in resistance between crystalline and amorphous phase change materials, the conductivity of the device unit will vary under different crystalline to amorphous volume ratios. By measuring the device resistance under different crystalline to amorphous volume ratios using the electrical testing system in the above-mentioned programming device, linear, continuous and symmetrical resistance value programming results can be obtained.

[0035] In the programming method, the size of the phase change material region irradiated by the laser can be designed according to the programming accuracy requirements. By combining the laser control and focusing module in the pump laser system with the displacement platform control module in the control and monitoring software, the laser beam size, irradiation time, and irradiation path can be adjusted together. By changing the switching time and switching volume of gradual crystallization or amorphization, the step size and slope of the linear change of the crystal and amorphous volume ratio in the effective phase change region can be quantitatively controlled, thereby controlling the number of recognizable logical states in a single phase change memory unit.

[0036] The electrical testing system can measure the electrical response of phase change storage devices in real time, and can also be coupled with time parameters to test the electrical response of phase change storage devices within a certain time range. The electrical response includes, but is not limited to, resistance-temperature curves (RT curves), resistance-time curves (Rt curves), volt-ampere characteristic curves (IV curves), and voltage-current curves (VI curves). The temperature control system can be set to a constant temperature for testing, or it can be set to change the temperature in real time for testing. The temperature control probe station 17 can introduce different gas atmospheres according to the requirements of the testing environment, including but not limited to air, nitrogen, argon, oxygen, vacuum, etc.

[0037] The beneficial effects of this invention are:

[0038] The novel programming device and method for phase change storage devices provided by this invention is a "photoelectric measurement" method. It can precisely control the volume of the material undergoing phase change by adjusting the beam size and irradiation area of ​​the laser, quantitatively program the volume ratio of crystal and amorphous phase change material, and realize linear and continuous resistance value programming. By precisely positioning and erasing the programmed area, the volume ratio of crystal and amorphous material corresponding to the previous switching process is obtained, and symmetrical resistance value programming is realized.

[0039] The apparatus and method provided by this invention can arbitrarily adjust the waveform, pulse width, power, and other parameters of the laser pulse through the signal generator in the laser control and focusing module to achieve the crystallization or amorphization switching of phase change materials; use the beam expander unit to adjust the laser beam spot size to change the irradiation area of ​​a single laser pulse; use the illumination module and camera module to observe the micro-region morphology of the phase change material before and after laser switching; use the displacement platform control module to accurately locate the target area of ​​laser irradiation and automatically program the laser irradiation path, the displacement direction and displacement step size of which can directly affect the step size and slope of the linear change of resistance value; use the temperature control probe station control module to provide an adjustable external ambient temperature for device testing; and use the electrical performance monitoring module to monitor the electrical response of the phase change device unit under the action of the laser pulse in real time, realizing quantitative and controllable programming of the number of identifiable logic states within a single phase change memory unit.

[0040] The device and method provided by this invention couple multiple physical parameters such as laser irradiation, programming temperature and programming time, which can effectively test the performance indicators of phase change memory device cells under multiple physical fields, and provide a reliable evaluation basis for the performance prediction of device arrays.

[0041] In the apparatus and method provided by this invention, the various systems and modules can be linked through software, enabling automated programming testing after calibration and programming conditions are set. Furthermore, the system has good compatibility, allowing for further development and expansion of new functions and modules to meet different programming testing needs. Attached Figure Description

[0042] Figure 1 This is a schematic diagram of the photoelectric temperature-time coupling test device involved in the present invention.

[0043] Figure 2 This is a partial schematic diagram of the gradual switching of phase change materials in a laser pulse-induced device unit. Detailed Implementation

[0044] The present invention will now be described in further detail with reference to the accompanying drawings.

[0045] A photoelectric temperature-coupled phase-change memory device, such as Figure 1 As shown, it includes a pump laser system, an electrical testing system, a thermal control system, and control and monitoring software.

[0046] The pump laser system, electrical testing system, thermal temperature control system, and control and monitoring software work together. Under the unified coordination of the control and monitoring software, the pump laser system emits laser pulses with specified parameters. In coordination with the displacement platform, the phase change storage material is gradually crystallized (SET gradual switching) or gradually amorphized (RESET gradual switching) under the specified laser irradiation area and path.

[0047] When the device is in the RESET state, the phase change storage film in the device is in the amorphous phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually crystallize, which is called SET gradual switching. When the device is in the SET state, the phase change storage film in the device is in the crystalline phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually amorphize, which is called RESET gradual switching. The above two operations can be switched between each other at any time.

[0048] Meanwhile, the heating and cooling temperature control system reaches the specified ambient temperature at a certain heating rate and maintains the temperature for a certain period of time. The electrical testing system records the electrical response of the phase change storage device in real time under the specified test duration, thereby realizing the "light-controlled electrical testing" programming operation of the phase change storage device under a specific environment.

[0049] The pumped laser system includes a laser control and focusing module, an illumination module, a camera module, and a displacement platform, used to emit laser signals to manipulate the phase change materials in the device for switching. The laser control and focusing module includes a signal generator 1, a laser controller 2, a laser 3, a polarization-maintaining single-mode fiber 4, a laser collimator 5, an optical path calibration unit 6, a first reflecting mirror 61, a second reflecting mirror 62, a beam expander 7, a first convex lens 71, a second convex lens 72, a dichroic mirror 13, and an objective lens 14; the illumination module includes an LED light source 12, a fourth convex lens 11, a beam splitter 10, a dichroic mirror 13, and an objective lens 14; the camera module includes a camera 8, a third convex lens 9, a beam splitter 10, a dichroic mirror 13, and an objective lens 14; the displacement platform includes an XYZ axis displacement platform 18 and an XY axis displacement platform 19.

[0050] The electrical testing system includes probe 16 and source meter 20, which are used to connect device units to form an electrical circuit and provide electrical signals such as current or voltage to test the electrical response of the device.

[0051] The hot and cold temperature control system includes a temperature control probe station 17 and a temperature controller 21, which are used to regulate the temperature during the programming process.

[0052] The control and monitoring software relies on computer 22 to control the testing device and monitor signals. It includes a laser control module, a signal generator control module, a displacement platform control module, a temperature control probe station control module, an electrical performance monitoring module, and a camera monitoring module. Through the software's linkage of various systems and modules, automated testing is achieved, and the electrical response of the phase change storage device over time is recorded in real time. The signal generator control module allows setting the pulse emitted by the signal generator and configuring parameters such as waveform, pulse width, and amplitude. The displacement platform control module adjusts the relative position of the device unit and the laser, enabling precise programming of a quantitative volume and a specific region of phase change material. It allows for high-precision displacement of the displacement platform in the X, Y, and Z axes, and can achieve single-step displacement of a set distance and continuous displacement at a set speed. The temperature control probe station control module regulates parameters such as the set temperature and temperature change rate of the temperature controller. The electrical performance monitoring module is used to monitor the electrical response of the recording device unit, including but not limited to resistance-temperature curves (RT curves), resistance-time curves (Rt curves), current-voltage characteristic curves (IV curves), and voltage-current curves (VI curves), and can adjust parameters such as test time in real time, with a single test duration ranging from 0.1s to 10h. The camera monitoring module can monitor the microscopic images of the recording device unit in real time.

[0053] Figure 2 This is a partial schematic diagram of the gradual switching of phase change materials in a laser pulse-induced device unit.

[0054] The boxed area in the diagram represents the effective phase transition region, the circular area represents the region where the phase transition has occurred after laser irradiation, and the remaining area within the box represents the region without laser irradiation. Different programming operations can be achieved by adjusting laser parameters such as power and pulse width, including writing (corresponding to crystallization) or erasing (corresponding to amorphization). The amorphization parameters are power 100–150 mW and pulse width 5–80 ns, while the crystallization parameters are power 20–100 mW and pulse width 30–500 ns. By adjusting the laser beam size (diameter 0.5–3 μm) and the irradiation area (length: 5–200 μm; width: 5–200 μm), the volume of material undergoing the phase transition can be precisely controlled, thereby quantitatively programming the crystalline and amorphous components within the device unit. The volume ratio (0%–100%) of the crystal to amorphous material is controlled to achieve linear and continuous resistance programming. By manipulating laser pulses to precisely position and erase the programmed area, the crystal to amorphous volume ratio (100%–0%) corresponding to the previous switching process can be obtained, achieving symmetrical resistance programming. By jointly adjusting the effective phase change region size and various laser parameters (such as beam size, irradiation range, power, pulse width, etc.), the step size and slope of the linear change in the crystal to amorphous volume ratio can be controlled, thereby achieving controllable programming of the number of identifiable logic states within a single phase change memory unit. The optical and electrical performance responses of the phase change material under temperature field are obtained by adjusting the device's operating environment temperature. The temperature control range is -200 to 200℃, the heating or cooling rate is 0.1℃ / min to 1000℃ / min, and the holding time is 0.1s to 10h.

[0055] The present invention will be further illustrated below with specific embodiments.

[0056] This embodiment takes the fabrication of a germanium-antimony-tellurium bridge-type phase-change memory device and the use of the apparatus and method provided by this invention for single-device multi-resistance state programming as an example. The specific process is as follows:

[0057] The effective phase transition region in the germanium-antimony-tellurium bridge-type phase change memory device has a length of 20 μm, a width of 10 μm, and a thickness of 80 nm. The control and monitoring software of computer 22 is started, ensuring proper connection of all systems. The germanium-antimony-tellurium phase change memory device is placed on the temperature-controlled probe stage 17, and probe 16 is connected to the device electrodes. The source meter is turned on to initially test the sample resistance, ensuring good contact between the probe and the sample. Based on the sample micrograph, the XYZ axis displacement platform 18 is roughly adjusted to move the sample to the center of the field of view and ensure clear focus, with the laser focused to the smallest spot size. The X and Y axis positions of the XY axis displacement platform 19 are finely adjusted so that the effective phase transition region of the device, where laser irradiation is required, falls on the laser spot position. The temperature controller 21 is adjusted and set to raise the temperature to 100℃ at a heating rate of 10℃ / min, and the holding time is 200 minutes. After the temperature stabilizes at 100℃, the resistance value of the device in its initial amorphous state and the IV curve are collected using the source meter. Subsequently, the pulsed laser parameters were set, with an irradiation beam size of approximately 1 μm, a power of 80 mW, and a pulse width of 200 ns. The laser irradiated the effective phase transition region point by point in a horizontally shifted manner from right to left. The irradiated region crystallized, forming a crystalline phase. After laser irradiation at each point, the resistance value and IV curve of the device were collected using a source meter. The resistance value was collected for 10 seconds, and the IV curve was tested for 20 seconds. During the test, the resistance value of the device increased linearly, and 64 different resistance logic states were obtained. Then, the pulsed laser parameters were reset to a pulse width of 50 ns, a power of 120 mW, and an irradiation beam size of approximately 1 μm. The laser irradiated the effective phase transition region point by point along the same trajectory. The irradiated region amorphized, forming an amorphous phase. After laser irradiation at each point, the resistance value and IV curve of the device were collected using a source meter. The resistance value was collected for 10 seconds, and the IV curve was tested for 20 seconds. During the testing process, the resistance value of the device decreased linearly, resulting in approximately 64 different resistance logic states. The resistance value of each logic state corresponds almost one-to-one with the resistance value during the crystallization process.

[0058] The embodiments described above are merely illustrative of the testing apparatus and method of the present invention in more detail, and are not intended to limit the scope of the invention. The protection scope of the present invention should not be limited thereto. Equivalent substitutions made by those skilled in the art based on the present invention for certain technical features are all within the protection scope of the present invention.

Claims

1. A programming device for a photoelectric-temperature-time coupled phase-change memory device, characterized in that, This includes a pumped laser system, an electrical testing system, a thermal control system, and control and monitoring software; The pump laser system, electrical testing system, thermal temperature control system, and control and monitoring software work together. Under the unified coordination of the control and monitoring software, the pump laser system emits laser pulses with specified parameters. In coordination with the displacement platform, the phase change storage material is gradually crystallized or gradually amorphized under the specified laser irradiation area and path. When the device is in the RESET state, the phase change storage film in the device is in the amorphous phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually crystallize, which is called SET gradual switching. When the device is in the SET state, the phase change storage film in the device is in the crystalline phase. A laser pulse with specified parameters is used to irradiate a specified area of ​​the film to cause it to gradually amorphize, which is called RESET gradual switching. The above two operations can be switched between each other at any time. Meanwhile, the hot and cold temperature control system reaches the specified ambient temperature at a certain heating rate and maintains the temperature for a certain period of time. The electrical testing system records the electrical response of the phase change storage device in real time under the specified test duration, thereby realizing the "light-controlled electrical testing" programming operation of the phase change storage device under a specific environment. The pump laser system is used to control the beam size, power, and pulse width parameters of the laser pulse, as well as to provide a light source for the phase transition region and acquire microscopic images in real time. The electrical testing system is used to monitor the electrical signal response of the phase change storage device (15) in real time; The heating and cooling temperature control system is used to precisely control the ambient temperature, temperature changes, and heat preservation time parameters during the test. The control and monitoring software is used to integrate all editable control parameters in the entire programming device, including laser pulse parameters, electrical test parameters, displacement platform parameters, and temperature control parameters. The control and monitoring software includes a laser control module, a signal generator control module, a displacement platform control module, a temperature control probe station control module, an electrical performance monitoring module, and a camera monitoring module. Among them, the laser control module realizes the switching and power control of the laser; the signal generator control module sets the signal generator (1) to emit pulses and sets the waveform, pulse width and amplitude parameters; the displacement platform control module is used to adjust the relative position of the phase change storage device (15) and the laser, thereby controlling the irradiation path and area of ​​the laser. The irradiation path is programmed to be perpendicular to the electrode direction, parallel to the electrode direction or any path according to the actual test needs. The irradiation area is switched point by point or by jumping by changing the displacement step size, gradually crystallizing the amorphous area or gradually amorphizing the crystalline area, quantitatively changing the crystal and amorphous volume ratio of the effective phase change area inside the phase change storage device (15), and finally realizing the precise programming of the quantitative volume and specific area of ​​the phase change material. The XYZ axis displacement platform (18) and XY axis displacement platform (19) perform high-precision displacement in the X, Y and Z axis directions, and can realize single-step displacement of set distance and continuous displacement of set speed; the temperature control probe station control module is used to regulate the set temperature and temperature change speed parameters of the temperature controller (21); the electrical performance monitoring module is used to monitor the recording device unit in SET / The device can monitor and record the electrical responses of the resistance value during the RESET process, including linear changes in resistance that increase or decrease continuously, as well as symmetrical changes that increase first and then decrease or decrease first and then increase. The device can also adjust parameters of the test time in real time, including but not limited to resistance-temperature curves (RT curves), resistance-time curves (Rt curves), current-voltage characteristic curves (IV curves), and voltage-current curves (VI curves). The camera monitoring module monitors and records the microscopic images of the device unit in real time.

2. The photoelectric-temperature-time coupled phase-change memory device programming device according to claim 1, characterized in that, The pumped laser system includes a laser control and focusing module, an illumination module, and a camera module. The laser control and focusing module is used to emit laser pulses and adjust the pulse parameters and laser beam size. The illumination module is used to provide a visible light source for the phase change storage device (15), with the illumination direction consistent with the laser illumination direction, and works with the camera module to monitor the microscopic image of the phase change region in real time.

3. The photoelectric-temperature-time coupled phase-change memory device programming device according to claim 2, characterized in that, The laser control and focusing module includes a signal generator (1) and a laser controller (2). After the laser is emitted by the laser (3), it passes through the polarization-maintaining single-mode fiber (4), the laser collimator (5), the optical path calibration unit (6), the beam expander (7), the dichroic mirror (13), and the objective lens (14) in sequence. The output terminals of the signal generator (1) and the laser controller (2) are respectively connected to the input terminal of the laser (3). The signal generator (1) is used to adjust the waveform, pulse width, and amplitude parameters of the laser pulse; the laser controller (2) is used to control the laser to turn on and off; and the laser (3) is used to generate a laser beam of a specific wavelength. The polarization-maintaining single-mode fiber (4) is used to connect the laser (3) and the laser collimator (5), wherein the polarization-maintaining single-mode fiber (4) is used for low-loss laser transmission; the laser collimator (5) is used to convert the laser transmitted by the polarization-maintaining single-mode fiber into collimated spatial light. The laser beam output by the laser collimator (5) will pass sequentially through the interconnected optical path calibration unit (6), beam expander (7), dichroic mirror (13), and objective lens (14); wherein, the optical path calibration unit (6) is used to adjust the laser direction to ensure that the laser is ultimately incident perpendicularly on the sample surface; the beam expander (7) uses a double convex lens imaging to adjust the size of the laser beam spot in front of the objective lens; the dichroic mirror (8) is used to reflect more than about 85% of the laser transmitted from the beam expander (7) to the objective lens (9), and the objective lens (9) is used to finally focus the laser beam into the phase change storage device (15); the illumination module includes a fourth convex lens (11), a beam splitter (10), a dichroic mirror (13), and an objective lens (14) arranged sequentially from the LED light source (12); The LED light source (12) provides LED illumination light for microscopic observation of the sample. The illumination point light source output from the LED light source (12) is first transmitted to the convex lens (11) to diverge the illumination point light into parallel light. The beam splitter (10) is located between the convex lens (11) and the dichroic mirror (13). The beam splitter (10) reflects the parallel light into the dichroic mirror (13) on one side and transmits the reflected light generated from the phase change storage device (15) to the camera module on the other side. The dichroic mirror (13) allows the illumination light to be transmitted to the objective lens (14), which is used to focus the parallel illumination light onto the phase change storage device (15). The camera module includes an objective lens (14), a dichroic mirror (13), a beam splitter (10), a third convex lens (9), and a CMOS camera (8) arranged sequentially from the light reflected by the phase change storage device (15).

4. The photoelectric-temperature-time coupled phase-change memory device programming device according to claim 3, characterized in that, The electrical testing system includes a source meter (20) and a probe (16). The source meter (20) provides voltage and current measurement sources for the phase change memory device (15) and records the electrical response signals of the phase change memory device (15) before and after laser programming. The probe (16) is used to connect the sample to the source meter (20). The electrical testing system can measure the electrical response of the phase change memory device (15) in real time, and can also be coupled with time parameters to test the electrical response of the phase change memory device (15) before and after laser programming within a certain time range. The hot and cold temperature control system includes a temperature controller (21) and a temperature control probe station (17). The temperature controller (21) is used to precisely control the programmed ambient temperature, set a constant temperature for testing or change the temperature in real time for testing. The temperature control probe station (17) is used to connect the test probe (16) for electrical response testing, and is connected to the temperature controller (21) for temperature control and temperature change rate control of the test environment. The high temperature environment can be achieved by a heater, and the low temperature environment can be achieved by liquid nitrogen or liquid helium. The probe station (17) can also introduce different gas atmospheres according to the test environment requirements, including but not limited to air, nitrogen, argon, oxygen and vacuum atmosphere.

5. The photoelectric-temperature-time coupled phase change memory device programming method according to claim 4, wherein the four parameters of light, electricity, temperature and time are coupled through important components such as the laser control and focusing module, the displacement platform control module, the temperature control probe station control module and the electrical performance monitoring module; The laser control and focusing module generates laser pulses with specific parameters. Combined with the displacement platform control module, the relative position of the device and the laser is adjusted. The phase change material in the device is manipulated by optical signals to quantitatively switch between SET and RESET step by step. The resistance value of the device during the switching process is measured in real time using an electrical performance monitoring module. The electrical signal response process within a certain time period can be recorded by setting the monitoring time. The phase change storage device (15) is set to test temperature using a temperature control probe station control module. The response of the phase change storage device (15) to electrical signals such as resistance value under different temperature environments is examined.

6. According to claim 5, in the laser control and focusing module, the modulation of the polarization-maintaining single-mode fiber (4), laser (3), laser collimator (5), optical path calibration unit (6), beam expander (7), dichroic mirror (13), and objective lens (14) directly acts on the phase change material in the phase change storage device (15). By using the pump laser system in the above programming device to control the beam size and irradiation area of ​​the laser, the Joule heat induced by the laser when irradiating the phase change material induces the material to undergo crystallization or amorphization phase transition, thereby quantifying the volume ratio of crystal to amorphous material in the programming device unit. The parameters involved in the above operation are as follows: The beam diameter ranges from 0.5 to 3 μm, the irradiation area ranges from 5 to 200 μm in length and 5 to 200 μm in width, the amorphization programming parameters are 100 to 150 mW power and 5 to 80 ns pulse width, the crystallization programming parameters are 20 to 100 mW power and 30 to 500 ns pulse width, and the volume ratio of crystal to amorphous material ranges from 0% to 100%. By combining the laser control and focusing module in the pump laser system with the displacement platform control module in the control and monitoring software, the laser pulse can be manipulated to precisely position and erase the programmed area, thereby obtaining a crystal to amorphous volume ratio range of 100% to 0% corresponding to the previous switching process.

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