Method for improving Q value of inductance element and application

Abstract

The invention belongs to the technical field of electronic element manufacturing, and particularly relates to a method for improving the Q value of an inductance element and application. The method comprises the following steps: soaking an inductance element to be treated in dilute phosphoric acid, removing impurities, and drying to obtain a treated inductance element; the soaking treatment time ranges from 25 min to 35 min. According to the method for improving the Q value of the inductance element, the inductance element to be treated is soaked in the phosphoric acid solution, impurities and oxides on the surface of the inductance element can be effectively removed, energy loss is reduced, phosphoric acid and metal ions on the surface of the inductance element form a phosphoric acid metal coordination compound, and the Q value of the inductance element is improved. Therefore, the insulating property of the product is improved, the impedance is increased, the loss is reduced, and the Q value and the corrosion resistance of the inductance element are remarkably improved.

Description

Technical Field

[0001] The present application belongs to the technical field of electronic component manufacturing, and specifically relates to a method and application for improving the Q value of an inductor component. Background Art

[0002] As a basic component in electronic circuits, inductors are widely used in filtering, oscillation, delay and other circuits. The quality factor Q (Quality Factor) of an inductor is an important indicator to measure the performance of an inductor, which reflects the degree of energy loss of the inductor at the resonant frequency. Inductors with high Q values ​​have better energy storage and release capabilities, which is of great significance for improving the overall performance of the circuit.

[0003] In the prior art, the Q value of the inductor is usually improved by optimizing the raw materials, process parameters, etc. during the preparation process. However, the Q value of the inductor obtained by optimizing the raw materials, process parameters, etc. is greatly different from the theoretical Q value, and the actual Q value is difficult to meet the theoretical requirements. Summary of the invention

[0004] The present application provides a method and application for improving the Q value of an inductor element to solve at least one aspect of the above-mentioned technical problems.

[0005] This application is implemented through the following technical solutions:

[0006] The first aspect of the present application provides a method for improving the Q value of an inductor element, comprising the following steps:

[0007] The inductor element to be processed is soaked in dilute phosphoric acid, then impurities are removed and dried to obtain a processed inductor element;

[0008] The soaking treatment time is 25 minutes to 35 minutes.

[0009] In some possible implementations, the inductive element to be processed includes an inductor.

[0010] In some possible implementations, the model of the inductor is 0650T-100 (06 size, carbonyl series 10 μH).

[0011] In some possible implementations, the Q value of the inductor element to be processed is 15 to 30. In this case, the efficiency of the inductor is reduced and the loss is increased, thereby affecting its performance.

[0012] In some possible implementations, in the soaking treatment step, the soaking temperature is 15°C to 25°C.

[0013] In some possible implementations, the concentration of the dilute phosphoric acid is 2% to 3.5%. In this case, the dilute phosphoric acid in some possible implementations, the impurity removal step includes:

[0014] Using a cleaning liquid to soak the soaked inductor element to remove impurities, and then removing moisture from the surface of the inductor element;

[0015] The cleaning solution includes one or more of water, ethanol, methanol and acetone.

[0016] Furthermore, an air gun is used to blow dry the cleaning liquid on the surface of the inductor element to remove the cleaning liquid on the surface of the inductor element.

[0017] In some possible implementations, the soaking and impurity removal time is 3 minutes to 10 minutes.

[0018] In some possible implementations, the impurity removal step further includes: during the soaking and impurity removal, ultrasonication is performed at a temperature of 20° C. to 25° C. for 30 seconds to 60 seconds. In this case, ultrasonication can quickly remove impurities on the surface of the inductor element.

[0019] Furthermore, the frequency of the ultrasound is 20kHz to 70kHz.

[0020] In some possible implementations, the drying step includes drying the inductor element at 55° C. to 70° C. for 10 to 15 minutes. In this case, the drying temperature is 55° C. to 70° C. and the drying time is 10 to 15 minutes, which can completely remove the moisture in the inductor element without damaging the structure and performance of the inductor element.

[0021] In some possible implementations, in the drying step, the drying temperature is 60° C. to 65° C., and the drying time is 10 min to 15 min.

[0022] In some possible implementations, the Q value of the processed inductor element is greater than 40, preferably 40-50.

[0023] In some possible implementations, a difference in Q value between the processed inductor element and the inductor element to be processed is 10-35.

[0024] In some possible implementations, the L value of the processed inductor element is 9-12.

[0025] A second aspect of the present application provides a method for improving the Q value of an inductor element and its application in the field of electronic component manufacturing.

[0026] The method for improving the Q value of an inductor element provided in the present application has at least the following beneficial technical effects:

[0027] (1) The method for improving the Q value of an inductor element provided in the present application uses a phosphoric acid solution to soak the inductor element to be treated, which can not only effectively remove impurities and oxides on the surface of the inductor element and reduce energy loss, but also phosphoric acid forms a phosphoric acid-metal coordination compound with metal ions on the surface of the inductor element, and then coats the surface of the inductor element, thereby increasing the insulation of the product, increasing the impedance, and reducing the loss. Thus, the Q value and corrosion resistance of the inductor element are significantly improved.

[0028] (2) The method for improving the Q value of an inductor element provided in the present application has simple steps, low cost, and is easy to promote and apply in industrial production.

[0029] (3) The method for improving the Q value of an inductor element provided in the present application is applicable to inductors of various models and specifications and has good versatility and practicality. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0031] Obviously, the following descriptions are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios without creative work. In addition, it can also be understood that although the efforts made in this development process may be complicated and lengthy, for ordinary technicians in the field related to the content disclosed in this application, some changes in design, manufacturing or production based on the technical content disclosed in this application are just conventional technical means, and should not be understood as insufficient content disclosed in this application.

[0032] However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially the same structures may be omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the following description is provided for those skilled in the art to fully understand the present application and is not intended to limit the subject matter described in the claims.

[0033] If not otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution, and all technical features and optional technical features of the present application can be combined with each other to form a new technical solution.

[0034] Example 1

[0035] Embodiment 1 provides a method for improving the Q value of an inductor element, the steps are as follows:

[0036] (1) An inductor of model 0650T-100 was selected as the inductor element to be treated: the Q value was 40 and the L value was 10 μH; dilute phosphoric acid with a mass concentration of 2.74% was selected as the treatment liquid.

[0037] (2) Soak the inductor component to be treated in a phosphoric acid solution for 30 minutes.

[0038] (3) Soaking the soaked inductor element in water for 3 minutes to remove impurities and then remove moisture on the surface of the inductor element.

[0039] (4) Drying the impurity-removed inductor element at 65° C. for 10 min to obtain a processed inductor element.

[0040] Example 2

[0041] Embodiment 2 provides a method for improving the Q value of an inductor element. The steps are basically the same as those of Embodiment 1, except that:

[0042] The mass concentration of dilute phosphoric acid in step (1) is 2%.

[0043] The soaking time in step (2) is 20 min.

[0044] Example 3

[0045] Embodiment 3 provides a method for improving the Q value of an inductor element. The steps are basically the same as those of Embodiment 1, except that:

[0046] The mass concentration of dilute phosphoric acid in step (1) is 2.5%.

[0047] The soaking time in step (2) is 30 min.

[0048] Example 4

[0049] Embodiment 4 provides a method for improving the Q value of an inductor element. The steps are basically the same as those of Embodiment 1, except that:

[0050] The mass concentration of dilute phosphoric acid in step (1) is 3.1%.

[0051] The soaking time in step (2) is 45 min.

[0052] Example 5

[0053] Embodiment 5 provides a method for improving the Q value of an inductor element. The steps are basically the same as those of Embodiment 1, except that:

[0054] In step (3), during the soaking and impurity removal, ultrasound is performed at 25° C., the frequency of ultrasound is 70 kHz, and the time of ultrasound is 30 s.

[0055] Example 6

[0056] Embodiment 6 provides a method for improving the Q value of an inductor element. The steps are basically the same as those of Embodiment 1, except that:

[0057] In step (3), during the soaking and impurity removal, ultrasound is performed at 25° C., the frequency of ultrasound is 20 kHz, and the time of ultrasound is 60 s.

[0058] Comparative Example 1

[0059] Comparative Example 1 provides a method for improving the Q value of an inductor element, and the steps are basically the same as those of Example 1, except that:

[0060] The mass concentration of dilute phosphoric acid in step (1) is 1.67%.

[0061] The soaking time in step (2) is 50 min.

[0062] Comparative Example 2

[0063] Comparative Example 2 provides a method for improving the Q value of an inductor element, and the steps are basically the same as those of Example 1, except that:

[0064] The mass concentration of dilute phosphoric acid in step (1) is 4.05%.

[0065] The soaking time in step (2) is 15 min.

[0066] In order to verify the progress of the method for improving the Q value of an inductor element provided in the embodiment of the present application, the Q values ​​of the inductor elements to be treated and the inductor elements after treatment provided in the embodiment and the comparative example are tested, and the results are shown in the following Table 1. Taking embodiment 1 and comparative example 1 as examples, 30 inductors of model 0650T-100 are grouped as two groups, A and B. Group A treats the inductors by the method provided in embodiment 1, and group B treats the inductors by the method provided in comparative example 1. The inductors before and after treatment are tested for Q value using a HIOKI-IM3536 tester, and the results are shown in the following Table 2.

[0067] Table 1

[0068] Q value of the inductor to be processed Q value of the inductor after processing Example 1 11 28 Example 2 14 26 Example 3 12 25 Example 4 13 33 Example 5 14 25 Example 6 16 26 Comparative Example 1 12 16 Comparative Example 2 14 22

[0069] Table 2

[0070]

[0071] Note: The "difference average" in Table 2 refers to the average value of the difference between the Q value after treatment and the Q value before treatment in Example 1 or Comparative Example 1.

[0072] From Tables 1 and 2 above, at least the following conclusions can be drawn:

[0073] (1) The method for improving the Q value of an inductor element provided in an embodiment of the present application adopts a phosphoric acid solution to soak the inductor element to be treated, which can not only effectively remove impurities and oxides on the surface of the inductor element and reduce energy loss, but also phosphoric acid forms a phosphate-metal coordination compound with metal ions on the surface of the inductor element, and then coats the surface of the inductor element, thereby increasing the insulation of the product, increasing the impedance, and reducing the loss; while maintaining the performance of the inductor element unchanged, the Q value and corrosion resistance of the inductor element are significantly improved.

[0074] (2) It can be seen from Tables 1 and 2 that, within the allowable error range, by using the method for improving the Q value of an inductor element provided in the present application, the difference in Q value between the processed inductor element and the inductor element to be processed is 10 to 35 (such as the average value of the difference in Table 2 is 17.1), and the Q value is significantly improved.

[0075] (3) As can be seen from Table 1, the method for improving the Q value of the inductor element provided in the embodiment of the present application, the concentration of dilute phosphoric acid and the conditions of ultrasonic impurity removal have a significant effect on improving the Q value of the inductor element.

[0076] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are only examples, and the embodiments having the same structure as the technical idea and exerting the same effect within the scope of the technical solution of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the main purpose of the present application, various modifications that can be thought of by those skilled in the art to the embodiments and other methods of combining some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A method for improving the Q value of an inductor element, characterized in that: The steps include: The inductor element to be processed is soaked in dilute phosphoric acid, then impurities are removed and dried to obtain a processed inductor element; The soaking treatment time is 25 minutes to 35 minutes.

2. The method for improving the Q value of an inductor element according to claim 1, characterized in that: The concentration of the dilute phosphoric acid is 2% to 3.5%.

3. The method for improving the Q value of an inductor element according to claim 1, characterized in that: The Q value of the inductor element to be processed is 15-30.

4. The method for improving the Q value of an inductor element according to any one of claims 1 to 3, characterized in that: In the soaking treatment step, the soaking temperature is 15°C to 25°C.

5. The method for improving the Q value of an inductor element according to claim 4, characterized in that: The impurity removal step comprises: Using a cleaning liquid to soak the soaked inductor element to remove impurities, and then removing moisture from the surface of the inductor element; The cleaning solution includes one or more of water, ethanol, methanol and acetone.

6. The method for improving the Q value of an inductor element according to claim 5, characterized in that: The soaking and impurity removal time is 3 minutes to 10 minutes.

7. The method for improving the Q value of an inductor element according to claim 5 or 6, characterized in that: The impurity removal step also includes: during the soaking and impurity removal, ultrasonication is performed at a temperature of 20° C. to 25° C., and the ultrasonication time is 30 seconds to 60 seconds.

8. The method for improving the Q value of an inductor element according to claim 7, characterized in that: The drying step comprises: drying the inductor element at 55° C. to 70° C. for 10 min to 15 min.

9. The method for improving the Q value of an inductor element according to claim 7, characterized in that: The difference between the Q value of the processed inductor element and the inductor element to be processed is 10-35.

10. A method for improving the Q value of an inductor element as claimed in any one of claims 1 to 9, and its application in the field of electronic component manufacturing.

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