A high-frequency terahertz heterodyne mixer and a preparation method and application thereof

Abstract

The application belongs to the technical field of terahertz photoelectric detection, and provides a high-frequency terahertz heterodyne frequency mixer, a preparation method and application thereof.The high-frequency terahertz heterodyne frequency mixer comprises a substrate layer, an absorption layer and a dielectric protective layer, and the substrate layer and the absorption layer are stacked; the absorption layer comprises a terminal metal electrode layer and a tantalum-nickel-tellurium layer arranged in a dispersed manner.The tantalum-nickel-tellurium has a nonlinear Hall effect, which can overcome the limitations of thermal voltage threshold and electron conversion time, and this mechanism is theoretically not affected by the cutoff frequency of a traditional frequency mixer.The application utilizes the nonlinear Hall effect generated by the symmetry breaking of the surface state of tantalum-nickel-tellurium to construct a terahertz heterodyne frequency mixer in a wideband frequency range.The heterodyne frequency mixer can realize fundamental wave mixing of radio frequency signals and local oscillator signals in a wideband frequency range, has the ability of high harmonic mixing, and can also be used for high-order frequency multiplication of low-frequency signals.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terahertz photoelectric detection, and particularly to a high-frequency terahertz heterodyne mixer and a preparation method and application thereof. BACKGROUND

[0002] The heterodyne mixer detector converts the measured terahertz signal into a microwave radio frequency band intermediate frequency signal through mixing of the measured terahertz signal and a low-noise local coherent terahertz signal, and then detects the intermediate frequency signal, which can effectively improve the detection sensitivity, and can also synchronously obtain the amplitude, phase and frequency information of the measured terahertz signal, and therefore becomes a core device for terahertz radar, communication and spectrum imaging applications. At present, the active substance of the absorption layer of the traditional heterodyne mixer detector is mainly a transistor of a III-V compound semiconductor, but the transistor of the III-V compound semiconductor is limited by output capacitance, electron saturation velocity, critical electric field and working principle, and the performance of the heterodyne mixer detector in a high-frequency and weak signal environment still faces challenges. SUMMARY

[0003] Therefore, the present application aims to provide a high-frequency terahertz heterodyne mixer and a preparation method and application thereof. The high-frequency terahertz heterodyne mixer provided by the present application can realize mixing of high-frequency signals, and can also be used for high-order frequency multiplication of low-frequency signals (i.e. weak signals).

[0004] In order to achieve the above-mentioned application purposes, the present application provides the following technical solutions:

[0005] The present application provides a high-frequency terahertz heterodyne mixer, which comprises a substrate layer, an absorption layer and a dielectric protective layer, wherein the substrate layer and the absorption layer are stacked.

[0006] The substrate layer comprises a intrinsic high-resistance silicon layer and a silicon dioxide layer which are stacked, and the silicon dioxide layer is in contact with the absorption layer.

[0007] The absorption layer comprises a terminal metal electrode layer and a tantalum-nickel-tellurium layer which are dispersedly arranged, the number of the terminal metal electrode layers is 4, the 4 terminal metal electrode layers are symmetrically distributed in the horizontal direction and the vertical direction of the tantalum-nickel-tellurium layer, the tantalum-nickel-tellurium layer is located at the center of the region formed by the 4 terminal metal electrode layers, and the tantalum-nickel-tellurium layer is in contact with the 4 terminal metal electrode layers.

[0008] The dielectric protective layer wraps the tantalum-nickel-tellurium layer.

[0009] Preferably, the intrinsic high-resistance silicon layer has a resistivity of 20000-25000 Ω·cm and a thickness of 300-400 μm.

[0010] Preferably, the silicon dioxide layer has a thickness of 300-400 nm.

[0011] Preferably, the end metal electrode layer comprises a chromium layer and a gold layer arranged in a stack, the chromium layer being in contact with the silicon dioxide layer.

[0012] Preferably, the thickness of the chromium layer is 10-15 nm, and the thickness of the gold layer is 20-30 nm.

[0013] Preferably, the thickness of the tantalum nickel tellurium layer is 40-100 nm.

[0014] Preferably, the medium protective layer is made of boron nitride, and the thickness of the medium protective layer is 20-50 nm.

[0015] Preferably, the high-frequency terahertz heterodyne mixer further comprises a PCB base, and the intrinsic high-resistance silicon layer in the high-frequency terahertz heterodyne mixer is in contact with the PCB base.

[0016] The PCB base is an SMA interface output.

[0017] The application also provides a preparation method of the high-frequency terahertz heterodyne mixer.

[0018] (1) performing photolithography on the substrate layer by using ultraviolet photolithography to obtain four end metal electrode layer structures, and then preparing four end metal electrode layers by using electron beam evaporation;

[0019] (2) performing mechanical exfoliation on the single-crystal tantalum nickel tellurium to obtain tantalum nickel tellurium flakes, and transferring the tantalum nickel tellurium flakes to the surface of the substrate layer to form a tantalum nickel tellurium layer;

[0020] (3) wrapping the tantalum nickel tellurium layer with a medium protective layer to obtain the high-frequency terahertz heterodyne mixer.

[0021] The application also provides an application of the high-frequency terahertz heterodyne mixer or the high-frequency terahertz heterodyne mixer prepared by the preparation method in the mixing of alternating electromagnetic waves.

[0022] The application provides a high-frequency terahertz heterodyne mixer.

[0023] As a topological nodal semimetal material, tantalum nickel tellurium has a unique topological state with coexistence of strong and weak topological orders in its crystal, and has strong anisotropy; meanwhile, tantalum nickel tellurium has nonlinear Hall effect, and the nonlinear Hall effect exists from low temperature (2K) to room temperature (300K); due to the nonlinear Hall effect, the limitation of thermal voltage threshold and electron conversion time can be overcome, and this mechanism is theoretically not affected by the cutoff frequency of a traditional mixer. The nonlinear response characteristics generated by the nonlinear Hall effect of tantalum nickel tellurium are used to realize mixing. Specifically, when two alternating current signals with different frequencies pass through the material with nonlinear Hall effect at the same time, the nonlinear response of the material will cause the sum frequency, difference frequency and other mixed components of the frequencies to appear in the output signal. The heterodyne mixer provided by the present application can realize fundamental mixing of radio frequency signals and local oscillator signals in a wide frequency range, and has the ability of high harmonic mixing, and can also be used for high-order frequency multiplication of low-frequency signals (i.e. weak signals), which provides a new exploration idea for the development of mixing devices, frequency multiplication devices and wireless communication electronic devices.

[0024] The data of the embodiment show that the high-frequency terahertz heterodyne mixer provided by the present application can realize fundamental mixing in a wide frequency range of 4-106GHz and 322-344GHz, and can realize up to ten times of harmonic mixing for a radio frequency of 90GHz, and can realize 26 times of harmonic frequency multiplication for a low-frequency signal of 1GHz. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 A cross-sectional structure schematic diagram of the high-frequency terahertz heterodyne mixer provided by the present application;

[0026] Figure 2 A top view structure schematic diagram of the high-frequency terahertz heterodyne mixer provided by the present application;

[0027] Figure 3 A test system device diagram for testing the heterodyne mixing performance of the high-frequency terahertz heterodyne mixer provided in embodiment 1;

[0028] Figure 4 A low-frequency fundamental mixing diagram of the high-frequency terahertz heterodyne mixer provided in embodiment 1;

[0029] Figure 5 A high-frequency fundamental mixing diagram of the high-frequency terahertz heterodyne mixer provided in embodiment 1;

[0030] Figure 6 A high-order harmonic mixing diagram of the high-frequency terahertz heterodyne mixer provided in embodiment 1;

[0031] Figure 7 A harmonic frequency multiplication diagram of the high-frequency terahertz heterodyne mixer provided in embodiment 1;

[0032] Reference numerals: 1-intrinsic high resistance silicon layer, 2-silicon dioxide layer, 3-terminal metal electrode layer, 4-tantalum nickel tellurium layer, 5-dielectric protective layer. DETAILED DESCRIPTION

[0033] In the present application, the tantalum nickel tellurium mechanically peeled off from the single crystal tantalum nickel tellurium is generally rectangular, so the cross-sectional shape of the tantalum nickel tellurium layer is also rectangular, the short side of the tantalum nickel tellurium layer is called the transverse direction, and the long side is called the longitudinal direction.

[0034] The present application provides a high-frequency terahertz heterodyne mixer, comprising a substrate layer, an absorption layer and a dielectric protective layer, the substrate layer and the absorption layer are stacked;

[0035] The substrate layer comprises an intrinsic high resistance silicon layer and a silicon dioxide layer stacked, and the silicon dioxide layer is in contact with the absorption layer;

[0036] The absorption layer comprises a terminal metal electrode layer and a tantalum nickel tellurium layer dispersedly arranged; the number of the terminal metal electrode layer is 4, and the 4 terminal metal electrode layers are symmetrically distributed according to the transverse direction and the longitudinal direction of the tantalum nickel tellurium layer, the tantalum nickel tellurium layer is located at the center of the region formed by the 4 terminal metal electrode layers, and the tantalum nickel tellurium layer is in contact with the 4 terminal metal electrode layers;

[0037] The dielectric protective layer wraps the tantalum nickel tellurium layer.

[0038] In the present application, the raw materials used are preferably commercially available products unless otherwise specified.

[0039] The high-frequency terahertz heterodyne mixer provided by the present application comprises a substrate layer, the substrate layer comprises an intrinsic high resistance silicon layer and a silicon dioxide layer stacked, and the silicon dioxide layer is in contact with the absorption layer. In the present application, the resistivity of the intrinsic high resistance silicon layer is preferably 20000-25000Ω·cm, and further preferably 20000Ω·cm; the thickness is preferably 300-400μm, and specifically preferably 300μm, 310μm, 320μm, 330μm, 340μm, 350μm, 360μm, 370μm, 380μm, 390μm or 400μm. In the present application, the thickness of the silicon dioxide layer is preferably 300-400nm, and specifically preferably 300nm, 310nm, 320nm, 330nm, 340nm, 350nm, 360nm, 370nm, 380nm, 390nm or 400nm. In a specific embodiment of the present application, the cross-sectional shape of the substrate layer is preferably circular, and the size of the circular shape is preferably 4 inches. In a specific embodiment of the present application, the substrate layer is specifically preferably a commercially available high resistance silicon dioxide wafer, and more preferably a high resistance silicon dioxide wafer purchased from Shanghai Onvia Technology Co., Ltd.

[0040] The high-frequency terahertz heterodyne mixer provided by the application comprises an absorption layer arranged on the substrate layer in a stacked manner, wherein the absorption layer comprises a plurality of end metal electrode layers and a tantalum-nickel-tellurium layer arranged in a dispersed manner; the number of the end metal electrode layers is four, and the four end metal electrode layers are symmetrically distributed in the horizontal direction and the vertical direction of the tantalum-nickel-tellurium layer; the tantalum-nickel-tellurium layer is located at the center of the region formed by the four end metal electrode layers and is in contact with the four end metal electrode layers. In the application, the end metal electrode layer preferably comprises a chromium layer and a gold layer arranged in a stacked manner, and the chromium layer is preferably in contact with the silicon dioxide layer. In the application, the thickness of the chromium layer is preferably 10-15 nm, and the thickness of the gold layer is preferably 20-30 nm, and more preferably 20 nm, 25 nm or 30 nm. In the application, the cross-sectional shape of the end metal electrode layer is preferably a “convex” shape, which comprises a head part and a handle part. The cross-sectional shape of the head part is preferably a rectangle, and the size of the rectangle is preferably 150-250 μm x 150-250 μm, and more preferably 200 μm x 200 μm. The cross-sectional shape of the handle part preferably comprises a large strip shape and a small strip shape. The large strip shape is in contact with the head part, and the size of the large strip shape is preferably 200-400 μm x 20-30 μm, and more preferably 250 μm x 20 μm. The size of the small strip shape is preferably 20-40 μm x 4-8 μm, and more preferably 30 μm x 5 μm. In the application, the handle part of the end metal electrode layer is preferably directed towards the tantalum-nickel-tellurium layer and is in contact with the tantalum-nickel-tellurium layer. In the application, the small strip shape of the end metal electrode layer is in contact with the tantalum-nickel-tellurium layer, and the cross-sectional size of the contact is preferably 2-8 μm x 4-8 μm, and more preferably 2 μm x 5 μm.

[0041] In the application, the thickness of the tantalum-nickel-tellurium layer is preferably 40-100 nm, and more preferably 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm. In the application, the cross-sectional shape of the tantalum-nickel-tellurium layer is preferably a rectangle, and the size of the rectangle is preferably ≥10 μm x 20 μm, and more preferably 10 μm x 20 μm.

[0042] The high-frequency terahertz heterodyne mixer provided by the application comprises a dielectric protective layer, and the dielectric protective layer wraps the tantalum-nickel-tellurium layer. In the application, the material of the dielectric protective layer is preferably boron nitride, and the thickness of the dielectric protective layer is preferably 20-50 nm, and more preferably 20 nm, 30 nm, 40 nm or 50 nm. In the application, the dielectric protective layer can protect the tantalum-nickel-tellurium layer from oxidation.

[0043] The high-frequency terahertz heterodyne mixer provided by the application preferably further comprises a PCB base, and the intrinsic high-resistance silicon layer in the high-frequency terahertz heterodyne mixer is preferably in contact with the PCB base. In the application, the PCB base is preferably an SMA interface output.

[0044] The application further provides a preparation method of the high-frequency terahertz heterodyne mixer.

[0045] (1) performing photolithography on the substrate layer by using an ultraviolet lithography method to obtain a four-end metal electrode layer structure, and then preparing four-end metal electrode layers by using an electron beam evaporation method;

[0046] (2) performing mechanical exfoliation on the single-crystal tantalum nickel tellurium to obtain tantalum nickel tellurium flakes, and transferring the tantalum nickel tellurium flakes to the surface of the substrate layer to form a tantalum nickel tellurium layer;

[0047] (3) wrapping the tantalum nickel tellurium layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer.

[0048] The application performs photolithography on the substrate layer by using an ultraviolet lithography method to obtain a four-end metal electrode layer structure, and then prepares four-end metal electrode layers by using an electron beam evaporation method.

[0049] The application does not specifically limit the parameters of the photolithography, and the operation known to those skilled in the art can be used. The application does not specifically limit the parameters of the electron beam evaporation method.

[0050] After the four-end metal electrode layers are prepared, the application performs mechanical exfoliation on the single-crystal tantalum nickel tellurium to obtain tantalum nickel tellurium flakes, and transfers the tantalum nickel tellurium flakes to the surface of the substrate layer to form a tantalum nickel tellurium layer.

[0051] In the application, the tool for mechanical exfoliation is preferably a blue adhesive tape. In the application, the thickness of the tantalum nickel tellurium flakes is preferably 40-100 nm. In the application, the cross-sectional shape of the tantalum nickel tellurium flakes is preferably rectangular. In the application, the tantalum nickel tellurium flakes are preferably transparent; and the tantalum nickel tellurium flakes are preferably screened by using a microscope.

[0052] After the tantalum nickel tellurium layer is formed, the application wraps the tantalum nickel tellurium layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer. In the application, when the material of the dielectric protective layer is boron nitride, the step of wrapping the tantalum nickel tellurium layer with the dielectric protective layer preferably comprises the following steps: performing mechanical exfoliation on the single-crystal boron nitride to obtain a thin-layer boron nitride, and transferring the thin-layer boron nitride to the tantalum nickel tellurium layer to form the dielectric protective layer. In the application, the tool for mechanical exfoliation is preferably a blue adhesive tape. In the application, the thickness of the thin-layer boron nitride is preferably 20-50 nm. In the application, the thin-layer boron nitride is preferably transparent; and the thin-layer boron nitride is preferably screened by using a microscope.

[0053] The application further provides application of the high-frequency terahertz heterodyne frequency mixer or the high-frequency terahertz heterodyne frequency mixer prepared by the preparation method in the mixing of alternating electromagnetic waves.

[0054] The application mode of the high-frequency terahertz heterodyne frequency mixer is not specifically limited, and a person skilled in the art can set it according to actual needs.

[0055] The high-frequency terahertz heterodyne frequency mixer, the preparation method and the application thereof provided by the application will be described in detail below in combination with embodiments, but they should not be understood as limitations to the protection scope of the application.

[0056] Example 1

[0057] According to the application, the high-frequency terahertz heterodyne frequency mixer is prepared by the following steps: Figure 1 and Figure 2 The high-frequency terahertz heterodyne frequency mixer is provided, wherein the cross-sectional shape of the substrate layer is a four-inch wafer, the intrinsic high-resistance silicon layer in the substrate layer is 20000 Ω·cm in resistivity and 400 μm in thickness, the thickness of the silicon dioxide layer is 400 nm; in the end metal electrode layer, the thickness of the chromium layer is 10 nm, the thickness of the gold layer is 20 nm, the cross-sectional shape of the end metal electrode layer is a "convex" shape, the size of the head of the "convex" shape is 200 μm×200 μm, the size of the large long strip in the handle is 250 μm×20 μm, and the size of the small long strip is 5 μm×30 μm; the thickness of the tantalum-nickel-tellurium layer is 70 nm, and the size of the cross-sectional shape is 10 μm×20 μm; the material of the dielectric protective layer is boron nitride, and the thickness is 30 nm; the cross-sectional size of the overlapped part of the small long strip in the handle and the tantalum-nickel-tellurium layer is 5 μm×2 μm.

[0058] The specific preparation method is as follows: the substrate layer is subjected to photolithography by using an ultraviolet photolithography method to obtain four end metal electrode layer structures, and then four end metal electrode layers are prepared by using an electron beam evaporation method; single-crystal tantalum-nickel-tellurium is mechanically exfoliated to obtain a tantalum-nickel-tellurium flake, the tantalum-nickel-tellurium flake is transferred to the surface of the substrate layer to form a tantalum-nickel-tellurium layer; single-crystal boron nitride is mechanically exfoliated to obtain a thin layer of boron nitride, and the thin layer of boron nitride is transferred to the tantalum-nickel-tellurium layer to form a dielectric protective layer.

[0059] The heterodyne frequency mixing performance of the high-frequency terahertz heterodyne frequency mixer in Example 1 is tested, and the testing system device is as follows: Figure 3The test principle is shown as follows: first, the 0.02-0.355 THz electromagnetic wave (referred to as the local signal) generated by the microwave source and the THz frequency multiplier, and the 0.02-0.355 THz electromagnetic wave (referred to as the radio frequency signal) generated by the adjustable microwave / THz signal source are vertically irradiated to the front surface and the back surface of the device under test (i.e. the high-frequency THz heterodyne mixer provided in Embodiment 1), the device under test can receive the two alternating electromagnetic wave signals and generate a mixed frequency signal, the mixed frequency signal output is amplified by a low-noise amplifier and then input into a frequency spectrometer, and the signal is collected and recorded by the frequency spectrometer. The detailed steps are as follows:

[0060] a) connect the test system as shown in the test system device diagram, and adjust the system settings to ensure that the system and the device are in a normal working state; Figure 3 b) adjust the THz frequency multiplier and the adjustable microwave / THz signal source, wherein the electromagnetic wave output by the THz frequency multiplier is used as the local signal, the electromagnetic wave output by the adjustable microwave / THz signal source is used as the radio frequency signal, the test position of the device under test is fixed, and the device under test is placed in the front and rear vertical radiation position of the source;d) set the output power and frequency of the local signal and the radio frequency signal required for the test by software, and control the output of the local signal and the radio frequency signal, the intermediate frequency signal generated by the device under test after receiving the output radio frequency signal and the local signal is amplified by a low-noise amplifier and then input into a frequency spectrometer; e) adjust the frequency spectrometer to display the frequency corresponding to the intermediate frequency signal, and record the output power P IF of the intermediate frequency signal. TIA , the effective light receiving area (limit diffraction area) of the device is S opt , the output power of the radio frequency signal is P RF , and the radio frequency signal output area of the radio frequency source is S RF , the conversion loss of the device under test is calculated according to formula 1:

[0061]

[0062] The results are shown in Table 1. Figures 4 to 7

[0063] Figure 4 The low-frequency fundamental mixing diagram of the high-frequency THz heterodyne mixer provided in Embodiment 1 is shown in FIG. 1, wherein the inset is a test configuration diagram, and it can be seen from Figure 4 that the high-frequency THz heterodyne mixer of Embodiment 1 can realize fundamental mixing in a wide frequency range of 4-106 GHz.

[0064] Figure 5 The high-frequency fundamental mixing diagram of the high-frequency THz heterodyne mixer provided in Embodiment 1 is shown in FIG. 2, and it can be seen from Figure 5It can be seen that the high-frequency terahertz heterodyne mixer of Example 1 can realize fundamental mixing in a wide frequency range of 322-344 GHz, and maintains a low conversion loss in this frequency range.

[0065] Figure 6 The high-order harmonic mixing diagram of the high-frequency terahertz heterodyne mixer provided for Example 1, wherein the inset is a test configuration diagram, from Figure 6 It can be seen that the high-frequency terahertz heterodyne mixer of Example 1 can realize up to ten times harmonic mixing for a radio frequency of 90 GHz.

[0066] Figure 7 The harmonic multiplication diagram of the high-frequency terahertz heterodyne mixer provided for Example 1, wherein the inset is a test configuration diagram, from Figure 7 It can be seen that the high-frequency terahertz heterodyne mixer provided for Example 1 can realize 26 times harmonic multiplication (multiplying a 1 GHz signal to 26 GHz) for a low-frequency signal of 1 GHz.

[0067] The above only describes the preferred embodiments of the present application, and it should be noted that for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A high-frequency terahertz heterodyne mixer comprising a substrate layer, an absorption layer and a dielectric protective layer; the substrate layer and the absorption layer are stacked. The substrate layer comprises a high-resistance intrinsic silicon layer and a silicon dioxide layer stacked, and the silicon dioxide layer is in contact with the absorption layer. The absorption layer comprises a plurality of end metal electrode layers and a tantalum-nickel-tellurium layer dispersedly arranged; the number of the end metal electrode layers is 4, and the 4 end metal electrode layers are symmetrically distributed in the horizontal and vertical directions of the tantalum-nickel-tellurium layer, the tantalum-nickel-tellurium layer is located at the center of the region formed by the 4 end metal electrode layers, and the tantalum-nickel-tellurium layer is in contact with the 4 end metal electrode layers. The dielectric protective layer wraps the tantalum-nickel-tellurium layer.

2. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The high-resistance intrinsic silicon layer has a resistivity of 20000-25000Ω·cm and a thickness of 300-400μm.

3. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The silicon dioxide layer has a thickness of 300-400nm.

4. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The end metal electrode layer comprises a chromium layer and a gold layer stacked, and the chromium layer is in contact with the silicon dioxide layer.

5. The high-frequency terahertz heterodyne mixer according to claim 4, characterized in that The chromium layer has a thickness of 10-15nm, and the gold layer has a thickness of 20-30nm.

6. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The tantalum-nickel-tellurium layer has a thickness of 40-100nm.

7. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The dielectric protective layer is made of boron nitride, and has a thickness of 20-50nm.

8. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that The high-frequency terahertz heterodyne mixer further comprises a PCB base, and the high-resistance intrinsic silicon layer in the high-frequency terahertz heterodyne mixer is in contact with the PCB base. The PCB base is an SMA interface output.

9. The method of producing a high-frequency terahertz heterodyne mixer as claimed in any one of claims 1 to 8, characterized in that, The method comprises the following steps: (1) performing photolithography on the substrate layer by using ultraviolet photolithography to obtain a structure of 4 end metal electrode layers, and then preparing the 4 end metal electrode layers by using electron beam evaporation; (2) mechanically peeling a single-crystal tantalum-nickel-tellurium to obtain a tantalum-nickel-tellurium flake, transferring the tantalum-nickel-tellurium flake to the surface of the substrate layer to form a tantalum-nickel-tellurium layer; (3) wrapping the tantalum-nickel-tellurium layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer. 10.The high-frequency terahertz heterodyne mixer of any one of claims 1-8 or the high-frequency terahertz heterodyne mixer prepared by the preparation method of claim 9 is applied to the mixing of alternating electromagnetic waves.

Images