180-degree phase shifter based on active amplifier

Abstract

The invention relates to a 180-degree phase shifter based on an active amplifier. The 180-degree phase shifter comprises a first radio frequency path and a second radio frequency path which are connected in parallel, the first radio frequency path is provided with a first radio frequency switch, a first input matching network, a common source amplifier tube structure, a first output matching network and a third radio frequency switch which are cascaded; the grid electrode of the common source amplifier tube structure is also connected with the input end of a first bias voltage; a second radio frequency switch, a second input matching network, a common-gate amplifier tube structure, a second output matching network and a fourth radio frequency switch which are cascaded are arranged on the second radio frequency path; and the grid electrode of the common-gate amplifier tube structure is also connected with the input end of the second bias voltage. According to the invention, the phase shift precision can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of electronic circuit design, and in particular to a 180° phase shifter based on an active amplifier. Background Art

[0002] As a new generation of wireless communication technology, phased array technology is widely used in satellite communications, navigation, radar, security and other fields because it can greatly improve the system's communication capacity, data transmission rate, anti-interference ability and transmission distance of wireless signals.

[0003] Phased array technology is often used in phased array antenna systems. Each antenna unit in the system transmits microwave signals of the same frequency. By adjusting the phase and amplitude of the microwave signals transmitted on different antennas, the signal can obtain a higher gain in the target beam direction and accurately point to the target. In order to achieve the above beamforming function, phase shifters are indispensable, and their performance directly affects the beam scanning quality of the phased array antenna system. Therefore, the research on high-performance and miniaturized phase shifters is of great significance that cannot be ignored.

[0004] Digitally controlled phase shifters are generally composed of multiple standard phase shift units such as 5.625°, 11.25°, 22.5°, 45°, 90° and 180° connected in series to achieve a phase shift range of 0°-360°. In the design of broadband phase shifters, it is necessary to ensure that the in-band phase shift of each standard phase shift unit is sufficiently flat and the additional attenuation is as small as possible, so that the overall performance of the cascaded phase shifter can reach the best. However, with the increase in the phase shift amount of the standard phase shift unit, the difficulty of implementing the standard phase shift unit gradually increases, especially the 180° standard phase shift unit. The 180° phase shift unit currently uses a switching high- and low-pass network design. Due to the extreme values ​​of the inductance and capacitance used in the high- and low-pass network, the 180° phase shift unit has a relatively large insertion loss and poor phase shift accuracy, which affects the overall performance of the phase shifter. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a 180° phase shifter based on an active amplifier, which can improve the phase shifting accuracy.

[0006] The technical solution adopted by the present invention to solve its technical problem is: to provide a 180° phase shifter based on an active amplifier, comprising a first radio frequency path and a second radio frequency path connected in parallel; a cascaded first radio frequency switch, a first input matching network, a common source amplifier tube structure, a first output matching network and a third radio frequency switch are arranged on the first radio frequency path, wherein the gate of the common source amplifier tube structure is connected to the output end of the first input matching network, the drain is connected to the input end of the first output matching network, and the source is grounded; the gate of the common source amplifier tube structure is also connected to the input end of the first bias voltage; the second radio frequency path is provided with a cascaded second radio frequency switch, a second input matching network, a common gate amplifier tube structure, a second output matching network and a fourth radio frequency switch, wherein the gate of the common gate amplifier tube structure is connected to ground in parallel with a capacitor to provide a radio frequency ground for the radio frequency path, the source is connected to the output end of the second input matching network, and the drain is connected to the input end of the second output matching network; the gate of the common gate amplifier tube structure is also connected to the input end of the second bias voltage.

[0007] The first input matching network uses a first transformer to match the input impedance of the common-source amplifier structure to a preset value; the first output matching network uses a third transformer to match the output impedance of the common-source amplifier structure to a preset value.

[0008] The second input matching network uses a second transformer to match the input impedance of the common-gate amplifier structure to a preset value; the second output matching network uses a fourth transformer to match the output impedance of the common-gate amplifier structure to a preset value.

[0009] The common-source amplifier tube structure adopts a differential structure, including a first MOS amplifier tube and a second MOS amplifier tube, wherein the gate of the first MOS amplifier tube is connected to the first output end of the first transformer, the drain is connected to the first input end of the third transformer, and the source is grounded; the gate of the second MOS amplifier tube is connected to the second output end of the first transformer, the drain is connected to the second input end of the third transformer, and the source is grounded; the middle tap of the first transformer is used as the input end of the gate bias voltage, and the middle tap of the third transformer is used as the input end of the drain bias voltage.

[0010] The common-gate amplifier tube structure adopts a differential structure, including a third MOS amplifier tube and a fourth MOS amplifier tube, the gate of the third MOS amplifier tube is grounded through a capacitor to provide a radio frequency ground for the radio frequency path, the source is connected to the first output end of the second transformer, and the drain is connected to the first input end of the fourth transformer; the gate of the fourth MOS amplifier tube is grounded through the capacitor to provide a radio frequency ground for the radio frequency path, the source is connected to the second output end of the second transformer, the drain is connected to the second input end of the fourth transformer, the middle tap of the second transformer is grounded, and the middle tap of the fourth transformer serves as the input end of the drain bias voltage.

[0011] The technical solution adopted by the present invention to solve its technical problem is: to provide a 180° phase shifter based on an active amplifier, comprising a first RF path and a second RF path connected in parallel; a cascaded first RF switch, a first input matching network, a common-emitter amplifier structure, a first output matching network and a third RF switch are arranged on the first RF path, wherein the base of the common-emitter amplifier structure is connected to the output end of the first input matching network, the collector is connected to the input end of the first output matching network, and the emitter is grounded; the base of the common-emitter amplifier structure is also connected to the input end of the first bias voltage; the second RF path is provided with a cascaded second RF switch, a second input matching network, a common-base amplifier structure, a second output matching network and a fourth RF switch, wherein the base of the common-base amplifier structure is connected to ground in parallel with a capacitor to provide a RF ground for the RF path, the emitter is connected to the output end of the second input matching network, and the collector is connected to the input end of the second output matching network; the base of the common-gate amplifier structure is also connected to the input end of the second bias voltage.

[0012] The first input matching network adopts a first transformer to match the input impedance of the common-emitter amplifier structure to a preset value; the first output matching network adopts a third transformer to match the output impedance of the common-emitter amplifier structure to a preset value.

[0013] The second input matching network uses a second transformer to match the input impedance of the common base amplifier structure to a preset value; the second output matching network uses a fourth transformer to match the output impedance of the common base amplifier structure to a preset value.

[0014] The common-emitter amplifier structure adopts a differential structure, including a first BJT amplifier and a second BJT amplifier. The base of the first BJT amplifier is connected to the first output end of the first transformer, the collector is connected to the first input end of the third transformer, and the emitter is grounded; the base of the second BJT amplifier is connected to the second output end of the first transformer, the collector is connected to the second input end of the third transformer, and the emitter is grounded; the middle tap of the first transformer serves as the input end of the base bias voltage, and the middle tap of the third transformer serves as the input end of the collector bias voltage.

[0015] The common-base amplifier tube structure adopts a differential structure, including a third BJT amplifier tube and a fourth BJT amplifier tube. The base of the third BJT amplifier tube is grounded through a capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the first output end of the second transformer, and the collector is connected to the first input end of the fourth transformer; the base of the fourth BJT amplifier tube is grounded through the capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the second output end of the second transformer, the collector is connected to the second input end of the fourth transformer, the middle tap of the second transformer is grounded, and the middle tap of the fourth transformer serves as the input end of the drain bias voltage.

[0016] Beneficial Effects

[0017] Due to the adoption of the above-mentioned technical scheme, the present invention has the following advantages and positive effects compared with the prior art: the present invention utilizes the characteristics that the input signal and the output signal of the common-source amplifier structure / common-emitter amplifier structure have a phase difference of 180°, and the input signal and the output signal of the common-gate amplifier structure / common-base amplifier structure have the same phase, and can achieve precise 180° phase shifting by controlling the switches and amplifier bias states in the signal path, and by adjusting the gains of the two amplifiers, greatly reduce the additional attenuation of the 180° phase shift unit, while solving the problem of large insertion loss of the 180° phase shift unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a reference state schematic diagram of a 180° phase shifter based on an active amplifier (MOS) according to an embodiment of the present invention;

[0019] Figure 2 is a schematic diagram of a phase shift state of a 180° phase shifter based on an active amplifier (MOS) according to an embodiment of the present invention;

[0020] Figure 3 is a schematic structural diagram of a 180° phase shifter implemented by a single-ended amplifier (MOS) in an embodiment of the present invention;

[0021] Figure 4Schematic diagram of the structure of a 180° phase shifter implemented by a differential amplifier (MOS) in an embodiment of the present invention.

[0022] Figure 5 is a reference state schematic diagram of a 180° phase shifter based on an active amplifier (BJT) according to an embodiment of the present invention;

[0023] Figure 6 1 is a schematic diagram of a phase shift state of a 180° phase shifter based on an active amplifier (BJT) according to an embodiment of the present invention;

[0024] Figure 7 1 is a schematic diagram of the structure of a 180° phase shifter implemented by a single-ended amplifier (BJT) in an embodiment of the present invention;

[0025] Figure 8 Schematic diagram of the structure of a 180° phase shifter implemented by a differential amplifier (BJT) in an embodiment of the present invention. DETAILED DESCRIPTION

[0026] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.

[0027] An embodiment of the present invention relates to a 180° phase shifter based on an active amplifier, comprising a first radio frequency path and a second radio frequency path connected in parallel; a cascaded first radio frequency switch SW1, a first input matching network IMN1, a common source amplifier tube structure A, a first output matching network OMN1 and a third radio frequency switch SW3 are arranged on the first radio frequency path, wherein the gate of the common source amplifier tube structure A is connected to the output end of the first input matching network IMN1, the drain is connected to the input end of the first output matching network OMN1, and the source is grounded; the gate of the common source amplifier tube structure A is also connected to The second RF path is provided with a cascaded second RF switch SW2, a second input matching network IMN2, a common-gate amplifier tube structure B, a second output matching network OMN2 and a fourth RF switch SW4, wherein the gate of the common-gate amplifier tube structure B is connected in parallel with a capacitor to ground to provide a RF ground for the RF path, the source is connected to the output end of the second input matching network IMN2, and the drain is connected to the input end of the second output matching network OMN2; the gate of the common-gate amplifier tube structure B is also connected to the input end VG2 of the second bias voltage.

[0028] The 180° phase shifter based on the active amplifier of this embodiment has two working states: reference state and phase shift state. Figure 1 As shown, the phase shift state is Figure 2 As shown. When the first RF switch SW1 and the third RF switch SW3 are controlled at a high level, the input of the first bias voltage input terminal VG1 is the bias voltage of the common source amplifier tube structure A in normal working state, the second RF switch SW2 and the fourth RF switch SW4 are controlled at a low level, and the input of the second bias voltage input terminal VG2 is 0, the 180° phase shifter is in a reference state; when the second RF switch SW2 and the fourth RF switch SW4 are controlled at a high level, the input of the second bias voltage input terminal VG2 is the bias voltage of the common gate amplifier tube structure B in normal working state, the first RF switch SW1 and the third RF switch SW3 are controlled at a low level, and the input of the first bias voltage input terminal VG1 is 0, the 180° phase shifter is in a phase shift state. Since the input signal and the output signal of the common source amplifier tube structure A differ in phase by 180°, and the input signal and the output signal of the common gate amplifier tube structure B have the same phase, the two RF paths can be switched to generate a relative phase difference of 180° to achieve a 180° phase shift.

[0029] Figure 3The figure shows a schematic diagram of a 180° phase shifter implemented by a single-ended amplifier (MOS), which is composed of two RF paths, one of which is composed of a first RF switch SW1, a first transformer TF1, a common-source amplifier tube structure A, a third transformer TF3 and a third RF switch SW3 connected in sequence, wherein the first transformer TF1 is an input matching network of the common-source amplifier tube structure A (a capacitor or inductor can be added at a corresponding position according to matching requirements), and the input impedance of the common-source amplifier tube structure A is matched to 50Ω, and the third transformer TF3 is an output matching network of the common-source amplifier tube structure A (a capacitor or inductor can be added at a corresponding position according to matching requirements), and the output impedance of the common-source amplifier tube structure A is matched to 50Ω, and the gate of the common-source amplifier tube structure A is also connected to the input terminal VG1 of the first bias voltage. Another RF path is composed of a second RF switch SW2, a second transformer TF2, a common-gate amplifier tube structure B, a fourth transformer TF4 and a fourth RF switch SW4, which are sequentially cascaded, wherein the second transformer TF2 is an input matching network of the common-gate amplifier tube structure B (a capacitor or inductor can be added at a corresponding position according to matching requirements), and the input impedance of the common-gate amplifier tube structure B is matched to 50Ω, and the fourth transformer TF4 is an output matching network of the common-gate amplifier tube structure B (a capacitor or inductor can be added at a corresponding position according to matching requirements), and the output impedance of the common-gate amplifier tube structure B is matched to 50Ω, and the gate of the common-gate amplifier tube structure B is also connected to the input end VG2 of the second bias voltage. The input and output ends of the two RF paths are respectively connected in parallel. When the first RF switch SW1 and the third RF switch SW3 are controlled at a high level, the input terminal VG1 of the first bias voltage is the bias voltage of the common source amplifier tube structure A in normal working state, the second RF switch SW2 and the fourth RF switch SW4 are controlled at a low level, and the input terminal VG2 of the second bias voltage is 0, the 180° phase shifter is in a reference state; when the second RF switch SW2 and the fourth RF switch SW4 are controlled at a high level, the input terminal VG2 of the second bias voltage is the bias voltage of the common gate amplifier tube structure B in normal working state, the first RF switch SW1 and the third RF switch SW3 are controlled at a low level, and the input terminal VG1 of the first bias voltage is 0, the 180° phase shifter is in a phase shift state. Since the input signal and the output signal of the common source amplifier tube structure A differ in phase by 180°, and the input signal and the output signal of the common gate amplifier tube structure B have the same phase, the two RF paths can be switched to generate a relative phase difference of 180° to achieve a 180° phase shift.

[0030] like Figure 4 The figure shows the schematic diagram of a 180° phase shifter implemented using a differential amplifier. Figure 3The difference between the two is that when the 180° phase shifter is implemented by a differential amplifier, the common source amplifier tube structure includes a first MOS amplifier tube M1 and a second MOS amplifier tube M2, the gate of the first MOS amplifier tube M1 is connected to the first output end of the first transformer T1, the drain is connected to the first input end of the third transformer T3, and the source is grounded; the gate of the second MOS amplifier tube M2 is connected to the second output end of the first transformer T1, the drain is connected to the second input end of the third transformer T3, and the source is grounded; the middle tap of the first transformer T1 serves as the input end VG1 of the first bias voltage. The common-gate amplifier structure includes a third MOS amplifier tube M3 and a fourth MOS amplifier tube M4. The gate of the third MOS amplifier tube M3 is connected in parallel with a capacitor to ground, providing a radio frequency ground for the radio frequency path, the source is connected to the first output end of the second transformer T2, and the drain is connected to the first input end of the fourth transformer T4; the gate of the fourth MOS amplifier tube M4 is connected in parallel with a capacitor to ground, providing a radio frequency ground for the radio frequency path, the source is connected to the second output end of the second transformer T2, and the drain is connected to the second input end of the fourth transformer T4.

[0031] When the first RF switch SW1 and the third RF switch SW3 are controlled at a high level, the input of the first bias voltage input terminal VG1 is the bias voltage of the first MOS amplifier M1 and the second MOS amplifier M2 in normal working state, the second RF switch SW2 and the fourth RF switch SW4 are controlled at a low level, and the input of the second bias voltage input terminal VG2 is 0, the 180° phase shifter is in a reference state; when the second RF switch SW2 and the fourth RF switch SW4 are controlled at a high level, the input of the second bias voltage input terminal VG2 is the bias voltage of the third MOS amplifier M3 and the fourth MOS amplifier M4 in normal working state, the first RF switch SW1 and the third RF switch SW3 are controlled at a low level, and the input of the first bias voltage input terminal VG1 is 0, the 180° phase shifter is in a phase shift state. Since the input signal and the output signal of the common-source amplifier structure formed by the first MOS amplifier tube M1 and the second MOS amplifier tube M2 have a phase difference of 180°, and the input signal and the output signal of the common-gate amplifier structure formed by the third MOS amplifier tube and the fourth MOS amplifier tube have the same phase, the two RF paths can be switched to generate a relative phase difference of 180°, thereby achieving a 180° phase shift.

[0032] It is not difficult to find that the present invention utilizes the characteristics that the phase difference between the input signal and the output signal of the common-source amplifier structure is 180°, and the phase difference between the input signal and the output signal of the common-gate amplifier structure is the same. By controlling the switches in the signal path and the bias state of the amplifier, precise 180° phase shifting can be achieved, and by adjusting the gains of the two amplifiers, the additional attenuation of the 180° phase shift unit is greatly reduced, and the problem of large insertion loss of the 180° phase shift unit is solved.

[0033] It is worth mentioning that the transistor type used in the 180° phase shifter based on the active amplifier in this embodiment can be not only MOS tube but also BJT tube. Correspondingly, the amplification structures on the two RF paths are common-emitter amplifier tube structure and common-base amplifier tube structure.

[0034] like Figure 5-Figure 8 As shown, when the amplification structures on the two RF paths are a common-emitter amplifier structure and a common-base amplifier structure, the 180° phase shifter based on the active amplifier specifically includes a first RF path and a second RF path connected in parallel; the first RF path is provided with a cascaded first RF switch, a first input matching network, a common-emitter amplifier structure, a first output matching network and a third RF switch, wherein the base of the common-emitter amplifier structure is connected to the output end of the first input matching network, the collector is connected to the input end of the first output matching network, and the emitter is grounded; the base of the common-emitter amplifier structure is also connected to the input end of the first bias voltage; the second RF path is provided with a cascaded second RF switch, a second input matching network, a common-base amplifier structure, a second output matching network and a fourth RF switch, wherein the base of the common-base amplifier structure is connected to ground in parallel with a capacitor to provide a RF ground for the RF path, the emitter is connected to the output end of the second input matching network, and the collector is connected to the input end of the second output matching network; the base of the common-gate amplifier structure is also connected to the input end of the second bias voltage.

[0035] The first input matching network adopts a first transformer to match the input impedance of the common-emitter amplifier structure to a preset value (a capacitor or an inductor may be added at a corresponding position according to matching requirements); the first output matching network adopts a third transformer to match the output impedance of the common-emitter amplifier structure to a preset value (a capacitor or an inductor may be added at a corresponding position according to matching requirements).

[0036] The second input matching network adopts a second transformer to match the input impedance of the common-base amplifier structure to a preset value (a capacitor or inductor can be added at a corresponding position according to matching requirements); the second output matching network adopts a fourth transformer to match the output impedance of the common-base amplifier structure to a preset value (a capacitor or inductor can be added at a corresponding position according to matching requirements).

[0037] The common-emitter amplifier structure adopts a differential structure, including a first BJT amplifier and a second BJT amplifier. The base of the first BJT amplifier is connected to the first output end of the first transformer, the collector is connected to the first input end of the third transformer, and the emitter is grounded; the base of the second BJT amplifier is connected to the second output end of the first transformer, the collector is connected to the second input end of the third transformer, and the emitter is grounded; the middle tap of the first transformer serves as the input end of the base bias voltage, and the middle tap of the third transformer serves as the input end of the collector bias voltage.

[0038] The common-base amplifier tube structure adopts a differential structure, including a third BJT amplifier tube and a fourth BJT amplifier tube. The base of the third BJT amplifier tube is grounded through a capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the first output end of the second transformer, and the collector is connected to the first input end of the fourth transformer; the base of the fourth BJT amplifier tube is grounded through the capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the second output end of the second transformer, the collector is connected to the second input end of the fourth transformer, the middle tap of the second transformer is grounded, and the middle tap of the fourth transformer serves as the input end of the drain bias voltage.

[0039] It is not difficult to find that the present invention utilizes the characteristics that the phase difference between the input signal and the output signal of the common-source amplifier structure / common-emitter amplifier structure is 180°, and the phase difference between the input signal and the output signal of the common-gate amplifier structure / common-base amplifier structure is the same. By controlling the switches in the signal path and the amplifier bias state, precise 180° phase shifting can be achieved, and by adjusting the gains of the two amplifiers, the additional attenuation of the 180° phase shift unit is greatly reduced, while solving the problem of large insertion loss of the 180° phase shift unit.

Claims

1. A 180° phase shifter based on an active amplifier, characterized in that: It comprises a first RF path and a second RF path connected in parallel; a cascaded first RF switch, a first input matching network, a common-source amplifier tube structure, a first output matching network and a third RF switch are arranged on the first RF path, wherein the gate of the common-source amplifier tube structure is connected to the output end of the first input matching network, the drain is connected to the input end of the first output matching network, and the source is grounded; the gate of the common-source amplifier tube structure is also connected to the input end of a first bias voltage; a cascaded second RF switch, a second input matching network, a common-gate amplifier tube structure, a second output matching network and a fourth RF switch are arranged on the second RF path, wherein the gate of the common-gate amplifier tube structure is connected to ground in parallel with a capacitor to provide a RF ground for the RF path, the source is connected to the output end of the second input matching network, the drain is connected to the input end of the second output matching network; the gate of the common-gate amplifier tube structure is also connected to the input end of a second bias voltage.

2. The 180° phase shifter based on active amplifier according to claim 1, characterized in that: The first input matching network uses a first transformer to match the input impedance of the common-source amplifier structure to a preset value; the first output matching network uses a third transformer to match the output impedance of the common-source amplifier structure to a preset value.

3. The 180° phase shifter based on active amplifier according to claim 1, characterized in that: The second input matching network uses a second transformer to match the input impedance of the common-gate amplifier structure to a preset value; the second output matching network uses a fourth transformer to match the output impedance of the common-gate amplifier structure to a preset value.

4. The 180° phase shifter based on active amplifier according to claim 2, characterized in that: The common-source amplifier tube structure adopts a differential structure, including a first MOS amplifier tube and a second MOS amplifier tube, wherein the gate of the first MOS amplifier tube is connected to the first output end of the first transformer, the drain is connected to the first input end of the third transformer, and the source is grounded; the gate of the second MOS amplifier tube is connected to the second output end of the first transformer, the drain is connected to the second input end of the third transformer, and the source is grounded; the middle tap of the first transformer is used as the input end of the gate bias voltage, and the middle tap of the third transformer is used as the input end of the drain bias voltage.

5. The 180° phase shifter based on active amplifier according to claim 3, characterized in that: The common-gate amplifier tube structure adopts a differential structure, including a third MOS amplifier tube and a fourth MOS amplifier tube, the gate of the third MOS amplifier tube is grounded through a capacitor to provide a radio frequency ground for the radio frequency path, the source is connected to the first output end of the second transformer, and the drain is connected to the first input end of the fourth transformer; the gate of the fourth MOS amplifier tube is grounded through the capacitor to provide a radio frequency ground for the radio frequency path, the source is connected to the second output end of the second transformer, the drain is connected to the second input end of the fourth transformer, the middle tap of the second transformer is grounded, and the middle tap of the fourth transformer serves as the input end of the drain bias voltage.

6. A 180° phase shifter based on an active amplifier, characterized in that: It comprises a first RF path and a second RF path connected in parallel; the first RF path is provided with a cascaded first RF switch, a first input matching network, a common-emitter amplifier structure, a first output matching network and a third RF switch, wherein the base of the common-emitter amplifier structure is connected to the output end of the first input matching network, the collector is connected to the input end of the first output matching network, and the emitter is grounded; the base of the common-emitter amplifier structure is also connected to the input end of a first bias voltage; the second RF path is provided with a cascaded second RF switch, a second input matching network, a common-base amplifier structure, a second output matching network and a fourth RF switch, wherein the base of the common-base amplifier structure is connected to ground in parallel with a capacitor to provide a RF ground for the RF path, the emitter is connected to the output end of the second input matching network, and the collector is connected to the input end of the second output matching network; the base of the common-gate amplifier structure is also connected to the input end of a second bias voltage.

7. The 180° phase shifter based on active amplifier according to claim 6, characterized in that: The first input matching network adopts a first transformer to match the input impedance of the common-emitter amplifier structure to a preset value; the first output matching network adopts a third transformer to match the output impedance of the common-emitter amplifier structure to a preset value.

8. The 180° phase shifter based on active amplifier according to claim 6, characterized in that: The second input matching network uses a second transformer to match the input impedance of the common base amplifier structure to a preset value; the second output matching network uses a fourth transformer to match the output impedance of the common base amplifier structure to a preset value.

9. The 180° phase shifter based on active amplifier according to claim 7, characterized in that: The common-emitter amplifier structure adopts a differential structure, including a first BJT amplifier and a second BJT amplifier. The base of the first BJT amplifier is connected to the first output end of the first transformer, the collector is connected to the first input end of the third transformer, and the emitter is grounded; the base of the second BJT amplifier is connected to the second output end of the first transformer, the collector is connected to the second input end of the third transformer, and the emitter is grounded; the middle tap of the first transformer serves as the input end of the base bias voltage, and the middle tap of the third transformer serves as the input end of the collector bias voltage.

10. The 180° phase shifter based on active amplifier according to claim 8, characterized in that: The common-base amplifier tube structure adopts a differential structure, including a third BJT amplifier tube and a fourth BJT amplifier tube. The base of the third BJT amplifier tube is grounded through a capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the first output end of the second transformer, and the collector is connected to the first input end of the fourth transformer; the base of the fourth BJT amplifier tube is grounded through the capacitor to provide a radio frequency ground for the radio frequency path, the emitter is connected to the second output end of the second transformer, the collector is connected to the second input end of the fourth transformer, the middle tap of the second transformer is grounded, and the middle tap of the fourth transformer serves as the input end of the drain bias voltage.

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